JP2013055080A - 表示装置および表示装置の製造方法 - Google Patents

表示装置および表示装置の製造方法 Download PDF

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Publication number
JP2013055080A
JP2013055080A JP2011190006A JP2011190006A JP2013055080A JP 2013055080 A JP2013055080 A JP 2013055080A JP 2011190006 A JP2011190006 A JP 2011190006A JP 2011190006 A JP2011190006 A JP 2011190006A JP 2013055080 A JP2013055080 A JP 2013055080A
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Japan
Prior art keywords
region
oxide semiconductor
gate electrode
display device
contact
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Pending
Application number
JP2011190006A
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English (en)
Japanese (ja)
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JP2013055080A5 (enExample
Inventor
Takashi Noda
剛史 野田
Tetsushi Kawamura
哲史 河村
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Japan Display Inc
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Japan Display East Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display East Inc filed Critical Japan Display East Inc
Priority to JP2011190006A priority Critical patent/JP2013055080A/ja
Priority to TW101130310A priority patent/TWI474093B/zh
Priority to US13/596,089 priority patent/US8803150B2/en
Priority to CN201210322625.0A priority patent/CN102969338B/zh
Priority to KR1020120095478A priority patent/KR101364361B1/ko
Publication of JP2013055080A publication Critical patent/JP2013055080A/ja
Publication of JP2013055080A5 publication Critical patent/JP2013055080A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP2011190006A 2011-08-31 2011-08-31 表示装置および表示装置の製造方法 Pending JP2013055080A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011190006A JP2013055080A (ja) 2011-08-31 2011-08-31 表示装置および表示装置の製造方法
TW101130310A TWI474093B (zh) 2011-08-31 2012-08-21 顯示裝置及顯示裝置的製造方法
US13/596,089 US8803150B2 (en) 2011-08-31 2012-08-28 Display device and manufacturing process of display device
CN201210322625.0A CN102969338B (zh) 2011-08-31 2012-08-30 显示装置及显示装置的制造方法
KR1020120095478A KR101364361B1 (ko) 2011-08-31 2012-08-30 표시 장치 및 표시 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011190006A JP2013055080A (ja) 2011-08-31 2011-08-31 表示装置および表示装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016026079A Division JP6240692B2 (ja) 2016-02-15 2016-02-15 表示装置および表示装置の製造方法

Publications (2)

Publication Number Publication Date
JP2013055080A true JP2013055080A (ja) 2013-03-21
JP2013055080A5 JP2013055080A5 (enExample) 2013-12-26

Family

ID=47742342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011190006A Pending JP2013055080A (ja) 2011-08-31 2011-08-31 表示装置および表示装置の製造方法

Country Status (5)

Country Link
US (1) US8803150B2 (enExample)
JP (1) JP2013055080A (enExample)
KR (1) KR101364361B1 (enExample)
CN (1) CN102969338B (enExample)
TW (1) TWI474093B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017228752A (ja) * 2015-08-19 2017-12-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN110660866A (zh) * 2018-06-28 2020-01-07 堺显示器制品株式会社 薄膜晶体管、显示装置和薄膜晶体管的制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102207063B1 (ko) * 2012-12-12 2021-01-25 엘지디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터 제조 방법 및 박막 트랜지스터를 포함하는 표시 장치
US9231111B2 (en) * 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102148957B1 (ko) 2013-09-02 2020-08-31 삼성디스플레이 주식회사 표시 기판 및 표시 기판의 제조 방법
KR102172972B1 (ko) 2014-02-26 2020-11-03 삼성디스플레이 주식회사 박막 트랜지스터 및 그의 제조방법
KR102427675B1 (ko) * 2015-04-20 2022-08-02 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 및 이를 포함하는 유기 발광 표시 장치
CN107039284A (zh) * 2017-04-17 2017-08-11 武汉华星光电技术有限公司 一种制作低温多晶硅薄膜晶体管的方法
WO2019012631A1 (ja) * 2017-07-12 2019-01-17 堺ディスプレイプロダクト株式会社 半導体装置およびその製造方法
CN113594185A (zh) * 2021-07-29 2021-11-02 北海惠科光电技术有限公司 阵列基板的制作方法及阵列基板
CN116504815B (zh) * 2023-06-27 2024-02-06 南京邮电大学 一种高功率a-IGZO薄膜晶体管及其制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307269A (ja) * 1988-06-03 1989-12-12 Sharp Corp 半導体装置
JP2001156295A (ja) * 1999-11-30 2001-06-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
JP2010141230A (ja) * 2008-12-15 2010-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2010199456A (ja) * 2009-02-27 2010-09-09 Dainippon Printing Co Ltd トランジスタ素子およびその製造方法
JP2010219214A (ja) * 2009-03-16 2010-09-30 Idemitsu Kosan Co Ltd 半導体薄膜の製造方法、及び該半導体薄膜を備える薄膜トランジスタ
WO2011040028A1 (ja) * 2009-09-30 2011-04-07 出光興産株式会社 Ｉｎ－Ｇａ－Ｚｎ－Ｏ系酸化物焼結体
WO2011065059A1 (ja) * 2009-11-27 2011-06-03 シャープ株式会社 薄膜トランジスタとその製造方法、半導体装置とその製造方法、並びに表示装置
JP2011135086A (ja) * 2009-12-23 2011-07-07 Samsung Electronics Co Ltd 薄膜トランジスタ、その製造方法、およびそれを利用した表示基板

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JP2001119029A (ja) * 1999-10-18 2001-04-27 Fujitsu Ltd 薄膜トランジスタ及びその製造方法及びそれを備えた液晶表示装置
US8053171B2 (en) * 2004-01-16 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television
TWI256515B (en) * 2004-04-06 2006-06-11 Quanta Display Inc Structure of LTPS-TFT and fabricating method thereof
JP2009099887A (ja) * 2007-10-19 2009-05-07 Hitachi Displays Ltd 表示装置
JP5704790B2 (ja) 2008-05-07 2015-04-22 キヤノン株式会社 薄膜トランジスタ、および、表示装置
JP5442228B2 (ja) * 2008-08-07 2014-03-12 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102484137B (zh) 2009-08-26 2015-06-17 株式会社爱发科 半导体装置、具有半导体装置的液晶显示装置、半导体装置的制造方法
KR101658533B1 (ko) * 2009-11-25 2016-09-22 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법
KR20110093113A (ko) 2010-02-11 2011-08-18 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307269A (ja) * 1988-06-03 1989-12-12 Sharp Corp 半導体装置
JP2001156295A (ja) * 1999-11-30 2001-06-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
JP2010141230A (ja) * 2008-12-15 2010-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2010199456A (ja) * 2009-02-27 2010-09-09 Dainippon Printing Co Ltd トランジスタ素子およびその製造方法
JP2010219214A (ja) * 2009-03-16 2010-09-30 Idemitsu Kosan Co Ltd 半導体薄膜の製造方法、及び該半導体薄膜を備える薄膜トランジスタ
WO2011040028A1 (ja) * 2009-09-30 2011-04-07 出光興産株式会社 Ｉｎ－Ｇａ－Ｚｎ－Ｏ系酸化物焼結体
WO2011065059A1 (ja) * 2009-11-27 2011-06-03 シャープ株式会社 薄膜トランジスタとその製造方法、半導体装置とその製造方法、並びに表示装置
JP2011135086A (ja) * 2009-12-23 2011-07-07 Samsung Electronics Co Ltd 薄膜トランジスタ、その製造方法、およびそれを利用した表示基板

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017228752A (ja) * 2015-08-19 2017-12-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2022008388A (ja) * 2015-08-19 2022-01-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP7254867B2 (ja) 2015-08-19 2023-04-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN110660866A (zh) * 2018-06-28 2020-01-07 堺显示器制品株式会社 薄膜晶体管、显示装置和薄膜晶体管的制造方法

Also Published As

Publication number Publication date
TWI474093B (zh) 2015-02-21
KR101364361B1 (ko) 2014-02-18
CN102969338A (zh) 2013-03-13
CN102969338B (zh) 2015-09-30
US8803150B2 (en) 2014-08-12
TW201312241A (zh) 2013-03-16
KR20130024851A (ko) 2013-03-08
US20130048996A1 (en) 2013-02-28

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