CN102969338B - 显示装置及显示装置的制造方法 - Google Patents

显示装置及显示装置的制造方法 Download PDF

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Publication number
CN102969338B
CN102969338B CN201210322625.0A CN201210322625A CN102969338B CN 102969338 B CN102969338 B CN 102969338B CN 201210322625 A CN201210322625 A CN 201210322625A CN 102969338 B CN102969338 B CN 102969338B
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oxide semiconductor
region
semiconductor film
gate electrode
area
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Chinese (zh)
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CN102969338A (zh
Inventor
野田刚史
河村哲史
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Magno Haote Co ltd
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Japan Display Central Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
CN201210322625.0A 2011-08-31 2012-08-30 显示装置及显示装置的制造方法 Active CN102969338B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-190006 2011-08-31
JP2011190006A JP2013055080A (ja) 2011-08-31 2011-08-31 表示装置および表示装置の製造方法

Publications (2)

Publication Number Publication Date
CN102969338A CN102969338A (zh) 2013-03-13
CN102969338B true CN102969338B (zh) 2015-09-30

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Country Link
US (1) US8803150B2 (enExample)
JP (1) JP2013055080A (enExample)
KR (1) KR101364361B1 (enExample)
CN (1) CN102969338B (enExample)
TW (1) TWI474093B (enExample)

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US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102207063B1 (ko) * 2012-12-12 2021-01-25 엘지디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터 제조 방법 및 박막 트랜지스터를 포함하는 표시 장치
US9231111B2 (en) * 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102148957B1 (ko) 2013-09-02 2020-08-31 삼성디스플레이 주식회사 표시 기판 및 표시 기판의 제조 방법
KR102172972B1 (ko) 2014-02-26 2020-11-03 삼성디스플레이 주식회사 박막 트랜지스터 및 그의 제조방법
KR102427675B1 (ko) * 2015-04-20 2022-08-02 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 및 이를 포함하는 유기 발광 표시 장치
WO2017029576A1 (en) * 2015-08-19 2017-02-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN107039284A (zh) * 2017-04-17 2017-08-11 武汉华星光电技术有限公司 一种制作低温多晶硅薄膜晶体管的方法
US11121262B2 (en) * 2017-07-12 2021-09-14 Sakai Display Products Corporation Semiconductor device including thin film transistor and method for manufacturing the same
JP2020004861A (ja) * 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
CN113594185A (zh) * 2021-07-29 2021-11-02 北海惠科光电技术有限公司 阵列基板的制作方法及阵列基板
CN116504815B (zh) * 2023-06-27 2024-02-06 南京邮电大学 一种高功率a-IGZO薄膜晶体管及其制备方法

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US6855954B1 (en) * 1999-10-18 2005-02-15 Fujitsu Display Technologies Corporation Thin film transistor, fabrication method thereof and liquid crystal display having the thin film transistor
CN101644862A (zh) * 2008-08-07 2010-02-10 株式会社日立显示器 显示装置及显示装置的制造方法
CN101944485A (zh) * 2009-07-03 2011-01-12 株式会社半导体能源研究所 半导体装置的制造方法

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JPH01307269A (ja) * 1988-06-03 1989-12-12 Sharp Corp 半導体装置
JP4514862B2 (ja) * 1999-11-30 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8053171B2 (en) * 2004-01-16 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television
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JP2009099887A (ja) * 2007-10-19 2009-05-07 Hitachi Displays Ltd 表示装置
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
JP5704790B2 (ja) 2008-05-07 2015-04-22 キヤノン株式会社 薄膜トランジスタ、および、表示装置
JP5781720B2 (ja) * 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP5617174B2 (ja) * 2009-02-27 2014-11-05 大日本印刷株式会社 トランジスタ素子の製造方法
JP2010219214A (ja) * 2009-03-16 2010-09-30 Idemitsu Kosan Co Ltd 半導体薄膜の製造方法、及び該半導体薄膜を備える薄膜トランジスタ
KR101175085B1 (ko) 2009-08-26 2012-08-21 가부시키가이샤 알박 반도체 장치, 반도체 장치를 갖는 액정 표시 장치, 반도체 장치의 제조 방법
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CN101644862A (zh) * 2008-08-07 2010-02-10 株式会社日立显示器 显示装置及显示装置的制造方法
CN101944485A (zh) * 2009-07-03 2011-01-12 株式会社半导体能源研究所 半导体装置的制造方法

Also Published As

Publication number Publication date
JP2013055080A (ja) 2013-03-21
TWI474093B (zh) 2015-02-21
KR101364361B1 (ko) 2014-02-18
CN102969338A (zh) 2013-03-13
US8803150B2 (en) 2014-08-12
TW201312241A (zh) 2013-03-16
KR20130024851A (ko) 2013-03-08
US20130048996A1 (en) 2013-02-28

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C06 Publication
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SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: Tokyo port xixinqiao Japan three chome 7 No. 1

Applicant after: JAPAN DISPLAY Inc.

Address before: Chiba County, Japan

Applicant before: Japan Display East Inc.

COR Change of bibliographic data

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C14 Grant of patent or utility model
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Effective date of registration: 20250725

Address after: Tokyo, Japan

Patentee after: Magno Haote Co.,Ltd.

Country or region after: Japan

Address before: Tokyo port xixinqiao Japan three chome 7 No. 1

Patentee before: JAPAN DISPLAY Inc.

Country or region before: Japan

TR01 Transfer of patent right