TWI458008B - 用於蝕刻半導體結構之具有脈衝樣品偏壓的脈衝電漿系統 - Google Patents

用於蝕刻半導體結構之具有脈衝樣品偏壓的脈衝電漿系統 Download PDF

Info

Publication number
TWI458008B
TWI458008B TW097106108A TW97106108A TWI458008B TW I458008 B TWI458008 B TW I458008B TW 097106108 A TW097106108 A TW 097106108A TW 97106108 A TW97106108 A TW 97106108A TW I458008 B TWI458008 B TW I458008B
Authority
TW
Taiwan
Prior art keywords
plasma
sample
etch
state
pulsed
Prior art date
Application number
TW097106108A
Other languages
English (en)
Chinese (zh)
Other versions
TW200845192A (en
Inventor
金泰元
李慶泰
彼得森亞歷桑德
杜德羅范倫提Ｎ.
戴希繆克沙珊克Ｃ.
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW200845192A publication Critical patent/TW200845192A/zh
Application granted granted Critical
Publication of TWI458008B publication Critical patent/TWI458008B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW097106108A 2007-02-21 2008-02-21 用於蝕刻半導體結構之具有脈衝樣品偏壓的脈衝電漿系統 TWI458008B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/677,472 US7718538B2 (en) 2007-02-21 2007-02-21 Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates

Publications (2)

Publication Number Publication Date
TW200845192A TW200845192A (en) 2008-11-16
TWI458008B true TWI458008B (zh) 2014-10-21

Family

ID=39705744

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097106108A TWI458008B (zh) 2007-02-21 2008-02-21 用於蝕刻半導體結構之具有脈衝樣品偏壓的脈衝電漿系統

Country Status (6)

Country Link
US (1) US7718538B2 (https=)
JP (2) JP5374388B2 (https=)
KR (1) KR101445299B1 (https=)
CN (2) CN101631897B (https=)
TW (1) TWI458008B (https=)
WO (1) WO2008103456A2 (https=)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9708707B2 (en) * 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US9121098B2 (en) 2003-02-04 2015-09-01 Asm International N.V. NanoLayer Deposition process for composite films
US7929798B2 (en) * 2005-12-07 2011-04-19 Micron Technology, Inc. Method and apparatus providing noise reduction while preserving edges for imagers
JP5547495B2 (ja) * 2007-02-21 2014-07-16 アプライド マテリアルズ インコーポレイテッド 半導体構造をエッチングするための、パルス化反応ガスを補充するパルス化プラズマシステム
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US9059116B2 (en) * 2007-11-29 2015-06-16 Lam Research Corporation Etch with pulsed bias
JP5395491B2 (ja) * 2009-03-31 2014-01-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US8658541B2 (en) * 2010-01-15 2014-02-25 Applied Materials, Inc. Method of controlling trench microloading using plasma pulsing
JP5662079B2 (ja) * 2010-02-24 2015-01-28 東京エレクトロン株式会社 エッチング処理方法
JP5845754B2 (ja) * 2010-09-15 2016-01-20 東京エレクトロン株式会社 プラズマエッチング処理方法
JP2012129429A (ja) * 2010-12-17 2012-07-05 Hitachi High-Technologies Corp プラズマ処理方法
US8809199B2 (en) 2011-02-12 2014-08-19 Tokyo Electron Limited Method of etching features in silicon nitride films
US20120302065A1 (en) * 2011-05-26 2012-11-29 Nanya Technology Corporation Pulse-plasma etching method and pulse-plasma etching apparatus
US20120302070A1 (en) * 2011-05-26 2012-11-29 Nanya Technology Corporation Method and system for performing pulse-etching in a semiconductor device
TWI450308B (zh) * 2011-07-27 2014-08-21 日立全球先端科技股份有限公司 Plasma processing method
CN102983099A (zh) * 2011-09-07 2013-03-20 中国科学院微电子研究所 半导体集成电路制造方法
CN102983076A (zh) * 2011-09-07 2013-03-20 中国科学院微电子研究所 半导体集成电路制造方法
CN103094180B (zh) * 2011-10-28 2015-04-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN103094097A (zh) * 2011-10-28 2013-05-08 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
KR101949503B1 (ko) * 2012-04-18 2019-02-18 에스케이하이닉스 주식회사 적층형 반도체 장치, 그 제조 방법 및 테스트 방법
US20140051256A1 (en) * 2012-08-15 2014-02-20 Lam Research Corporation Etch with mixed mode pulsing
GB2505685B (en) * 2012-09-07 2015-11-04 Univ Salford Method of coating and etching
CN103681451A (zh) * 2012-09-26 2014-03-26 南亚科技股份有限公司 沟槽结构的制造方法
CN103730349B (zh) * 2012-10-10 2016-08-03 中芯国际集成电路制造(上海)有限公司 一种形成接触孔的方法
CN103021912B (zh) * 2012-12-24 2015-10-07 中微半导体设备(上海)有限公司 半导体刻蚀装置及半导体结构的刻蚀方法
JP6114622B2 (ja) * 2013-04-26 2017-04-12 東京エレクトロン株式会社 エッチング方法
CN104241355B (zh) * 2013-06-09 2017-06-13 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
JP2015037091A (ja) 2013-08-12 2015-02-23 東京エレクトロン株式会社 エッチング方法
JP2015050433A (ja) 2013-09-04 2015-03-16 東京エレクトロン株式会社 プラズマ処理方法
JP5701958B2 (ja) * 2013-10-15 2015-04-15 東京エレクトロン株式会社 基板処理装置
US9472416B2 (en) 2013-10-21 2016-10-18 Applied Materials, Inc. Methods of surface interface engineering
CN104752181B (zh) * 2013-12-30 2018-07-10 中芯国际集成电路制造(上海)有限公司 去除伪栅的方法
CN104752351B (zh) * 2013-12-30 2019-03-29 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
GB201406135D0 (en) 2014-04-04 2014-05-21 Spts Technologies Ltd Method of etching
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
CN105097524B (zh) * 2014-05-04 2018-11-16 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法和cmos晶体管的形成方法
KR102222902B1 (ko) 2014-05-12 2021-03-05 삼성전자주식회사 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
US9583485B2 (en) 2015-05-15 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same
US9761459B2 (en) 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US9978606B2 (en) 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
US9788405B2 (en) 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9754767B2 (en) 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9614524B1 (en) 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing
KR20170097270A (ko) 2016-02-17 2017-08-28 삼성전자주식회사 반도체 소자 및 이의 제조 방법
JP6789721B2 (ja) * 2016-08-12 2020-11-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6697372B2 (ja) 2016-11-21 2020-05-20 キオクシア株式会社 ドライエッチング方法及び半導体装置の製造方法
JP6837886B2 (ja) * 2017-03-21 2021-03-03 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US10811296B2 (en) 2017-09-20 2020-10-20 Applied Materials, Inc. Substrate support with dual embedded electrodes
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10714372B2 (en) 2017-09-20 2020-07-14 Applied Materials, Inc. System for coupling a voltage to portions of a substrate
US10904996B2 (en) 2017-09-20 2021-01-26 Applied Materials, Inc. Substrate support with electrically floating power supply
US10763150B2 (en) 2017-09-20 2020-09-01 Applied Materials, Inc. System for coupling a voltage to spatially segmented portions of the wafer with variable voltage
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US10734245B2 (en) * 2018-10-19 2020-08-04 International Business Machines Corporation Highly selective dry etch process for vertical FET STI recess
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
CN112447597B (zh) * 2019-09-02 2025-03-28 中芯国际集成电路制造(上海)有限公司 一种半导体器件及形成方法
US11043387B2 (en) 2019-10-30 2021-06-22 Applied Materials, Inc. Methods and apparatus for processing a substrate
US11522050B2 (en) * 2020-01-30 2022-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
DE102020132562B4 (de) 2020-01-30 2024-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur herstellung einer halbleitervorrichtung und halbleitervorrichtung
US11387365B2 (en) * 2020-04-01 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device for recessed fin structure having rounded corners
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255221B1 (en) * 1998-12-17 2001-07-03 Lam Research Corporation Methods for running a high density plasma etcher to achieve reduced transistor device damage
US20010051438A1 (en) * 1997-06-25 2001-12-13 Samsung Electronics Process and apparatus for dry-etching a semiconductor layer
US6332425B1 (en) * 1994-11-04 2001-12-25 Hitachi Ltd Surface treatment method and system

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8516537D0 (en) * 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
JPH04110757U (ja) * 1991-03-11 1992-09-25 神港精機株式会社 断続プラズマ装置
JP2957403B2 (ja) * 1993-01-18 1999-10-04 日本電気株式会社 プラズマエッチング方法とその装置
JP3424182B2 (ja) * 1994-09-13 2003-07-07 アネルバ株式会社 表面処理装置
JP3546977B2 (ja) * 1994-10-14 2004-07-28 富士通株式会社 半導体装置の製造方法と製造装置
US5683538A (en) * 1994-12-23 1997-11-04 International Business Machines Corporation Control of etch selectivity
US6902683B1 (en) * 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US5877407A (en) * 1997-07-22 1999-03-02 Lucent Technologies Inc. Plasma etch end point detection process
US6187685B1 (en) * 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
US6228241B1 (en) * 1998-07-27 2001-05-08 Boundary Technologies, Inc. Electrically conductive anodized aluminum coatings
JP2000058292A (ja) * 1998-08-04 2000-02-25 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
JP4153606B2 (ja) * 1998-10-22 2008-09-24 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
JP4163857B2 (ja) * 1998-11-04 2008-10-08 サーフィス テクノロジー システムズ ピーエルシー 基板をエッチングするための方法と装置
US6566272B2 (en) * 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
JP2001313284A (ja) * 2000-02-21 2001-11-09 Hitachi Ltd プラズマ処理方法および装置
US20040224504A1 (en) * 2000-06-23 2004-11-11 Gadgil Prasad N. Apparatus and method for plasma enhanced monolayer processing
US6875700B2 (en) * 2000-08-29 2005-04-05 Board Of Regents, The University Of Texas System Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
DE10309711A1 (de) * 2001-09-14 2004-09-16 Robert Bosch Gmbh Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
US6818562B2 (en) * 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US8404594B2 (en) * 2005-05-27 2013-03-26 Freescale Semiconductor, Inc. Reverse ALD

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6332425B1 (en) * 1994-11-04 2001-12-25 Hitachi Ltd Surface treatment method and system
US20010051438A1 (en) * 1997-06-25 2001-12-13 Samsung Electronics Process and apparatus for dry-etching a semiconductor layer
US6255221B1 (en) * 1998-12-17 2001-07-03 Lam Research Corporation Methods for running a high density plasma etcher to achieve reduced transistor device damage

Also Published As

Publication number Publication date
JP2010519758A (ja) 2010-06-03
US7718538B2 (en) 2010-05-18
TW200845192A (en) 2008-11-16
CN101636822A (zh) 2010-01-27
WO2008103456A8 (en) 2009-10-15
KR101445299B1 (ko) 2014-09-26
JP2014039050A (ja) 2014-02-27
JP5774071B2 (ja) 2015-09-02
CN101631897A (zh) 2010-01-20
KR20100014502A (ko) 2010-02-10
US20080197110A1 (en) 2008-08-21
CN101631897B (zh) 2011-10-12
WO2008103456A3 (en) 2008-10-23
JP5374388B2 (ja) 2013-12-25
WO2008103456A2 (en) 2008-08-28

Similar Documents

Publication Publication Date Title
TWI458008B (zh) 用於蝕刻半導體結構之具有脈衝樣品偏壓的脈衝電漿系統
TWI452624B (zh) 具有脈衝反應氣體補充以用於蝕刻半導體結構之脈衝電漿系統
US7737042B2 (en) Pulsed-plasma system for etching semiconductor structures
US9570317B2 (en) Microelectronic method for etching a layer
TWI483305B (zh) 使用電漿脈衝來控制溝槽微負載的方法
CN100568458C (zh) 使用多个掩模步骤减小临界尺寸的方法
US11398386B2 (en) Plasma etch processes
TWI553692B (zh) Plasma etching apparatus and etching method thereof
US12374557B2 (en) Methods for etching structures with oxygen pulsing
CN116457919A (zh) 用于半导体图案化应用的氧化锡及碳化锡材料
TW201820388A (zh) 用於半導體處理之矽基沉積
KR20140021610A (ko) 풀 메탈 게이트 구조를 패터닝하는 방법
JP5547495B2 (ja) 半導体構造をエッチングするための、パルス化反応ガスを補充するパルス化プラズマシステム
KR101133697B1 (ko) 반도체소자 가공방법
US20250299962A1 (en) Method for etching a layer through a patterned mask layer
WO2008103454A2 (en) Pulsed plasma system for etching semiconductor structures
JP2025525500A (ja) 窒化ホウ素マスクを使用する炭素ハードマスク開口
JP2008010692A (ja) ドライエッチング方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees