JP5374388B2 - パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム - Google Patents

パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム Download PDF

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Publication number
JP5374388B2
JP5374388B2 JP2009550603A JP2009550603A JP5374388B2 JP 5374388 B2 JP5374388 B2 JP 5374388B2 JP 2009550603 A JP2009550603 A JP 2009550603A JP 2009550603 A JP2009550603 A JP 2009550603A JP 5374388 B2 JP5374388 B2 JP 5374388B2
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pulsed
sample
plasma
state
etch
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Japanese (ja)
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JP2010519758A (ja
JP2010519758A5 (https=
Inventor
テ， ウォン キム，
ギョン−テ リー，
アレクサンダー パターソン，
ヴァレンティン， エヌ． トドロウ，
シャシャンク， シー． デシュムーク，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2009550603A 2007-02-21 2008-02-21 パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム Expired - Fee Related JP5374388B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/677,472 2007-02-21
US11/677,472 US7718538B2 (en) 2007-02-21 2007-02-21 Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
PCT/US2008/002371 WO2008103456A2 (en) 2007-02-21 2008-02-21 Pulsed plasma system with pulsed sample bias for etching semiconductor structures

Related Child Applications (1)

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JP2013194148A Division JP5774071B2 (ja) 2007-02-21 2013-09-19 パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム

Publications (3)

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JP2010519758A JP2010519758A (ja) 2010-06-03
JP2010519758A5 JP2010519758A5 (https=) 2011-04-07
JP5374388B2 true JP5374388B2 (ja) 2013-12-25

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JP2009550603A Expired - Fee Related JP5374388B2 (ja) 2007-02-21 2008-02-21 パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム
JP2013194148A Expired - Fee Related JP5774071B2 (ja) 2007-02-21 2013-09-19 パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム

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US (1) US7718538B2 (https=)
JP (2) JP5374388B2 (https=)
KR (1) KR101445299B1 (https=)
CN (2) CN101631897B (https=)
TW (1) TWI458008B (https=)
WO (1) WO2008103456A2 (https=)

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Also Published As

Publication number Publication date
JP2010519758A (ja) 2010-06-03
US7718538B2 (en) 2010-05-18
TW200845192A (en) 2008-11-16
CN101636822A (zh) 2010-01-27
WO2008103456A8 (en) 2009-10-15
KR101445299B1 (ko) 2014-09-26
JP2014039050A (ja) 2014-02-27
JP5774071B2 (ja) 2015-09-02
CN101631897A (zh) 2010-01-20
KR20100014502A (ko) 2010-02-10
TWI458008B (zh) 2014-10-21
US20080197110A1 (en) 2008-08-21
CN101631897B (zh) 2011-10-12
WO2008103456A3 (en) 2008-10-23
WO2008103456A2 (en) 2008-08-28

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