JP2010519758A5 - - Google Patents

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JP2010519758A5
JP2010519758A5 JP2009550603A JP2009550603A JP2010519758A5 JP 2010519758 A5 JP2010519758 A5 JP 2010519758A5 JP 2009550603 A JP2009550603 A JP 2009550603A JP 2009550603 A JP2009550603 A JP 2009550603A JP 2010519758 A5 JP2010519758 A5 JP 2010519758A5
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state
sample
plasma
chamber
etching
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JP2009550603A
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JP2010519758A (ja
JP5374388B2 (ja
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Priority claimed from US11/677,472 external-priority patent/US7718538B2/en
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JP2009550603A 2007-02-21 2008-02-21 パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム Expired - Fee Related JP5374388B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/677,472 2007-02-21
US11/677,472 US7718538B2 (en) 2007-02-21 2007-02-21 Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
PCT/US2008/002371 WO2008103456A2 (en) 2007-02-21 2008-02-21 Pulsed plasma system with pulsed sample bias for etching semiconductor structures

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JP2013194148A Division JP5774071B2 (ja) 2007-02-21 2013-09-19 パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム

Publications (3)

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JP2010519758A JP2010519758A (ja) 2010-06-03
JP2010519758A5 true JP2010519758A5 (https=) 2011-04-07
JP5374388B2 JP5374388B2 (ja) 2013-12-25

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JP2009550603A Expired - Fee Related JP5374388B2 (ja) 2007-02-21 2008-02-21 パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム
JP2013194148A Expired - Fee Related JP5774071B2 (ja) 2007-02-21 2013-09-19 パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム

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JP2013194148A Expired - Fee Related JP5774071B2 (ja) 2007-02-21 2013-09-19 パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム

Country Status (6)

Country Link
US (1) US7718538B2 (https=)
JP (2) JP5374388B2 (https=)
KR (1) KR101445299B1 (https=)
CN (2) CN101631897B (https=)
TW (1) TWI458008B (https=)
WO (1) WO2008103456A2 (https=)

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