CN101631897B - 用于蚀刻半导体结构的具有脉冲样品偏压的脉冲等离子体系统 - Google Patents

用于蚀刻半导体结构的具有脉冲样品偏压的脉冲等离子体系统 Download PDF

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Publication number
CN101631897B
CN101631897B CN2008800081158A CN200880008115A CN101631897B CN 101631897 B CN101631897 B CN 101631897B CN 2008800081158 A CN2008800081158 A CN 2008800081158A CN 200880008115 A CN200880008115 A CN 200880008115A CN 101631897 B CN101631897 B CN 101631897B
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state
plasma
sample
etch
pulsed
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Chinese (zh)
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CN101631897A (zh
Inventor
金泰元
李庆泰
亚历山大·帕特森
瓦伦丁·N·托多罗夫
沙尚克·C·德斯穆克
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CN2008800081158A 2007-02-21 2008-02-21 用于蚀刻半导体结构的具有脉冲样品偏压的脉冲等离子体系统 Expired - Fee Related CN101631897B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/677,472 2007-02-21
US11/677,472 US7718538B2 (en) 2007-02-21 2007-02-21 Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
PCT/US2008/002371 WO2008103456A2 (en) 2007-02-21 2008-02-21 Pulsed plasma system with pulsed sample bias for etching semiconductor structures

Publications (2)

Publication Number Publication Date
CN101631897A CN101631897A (zh) 2010-01-20
CN101631897B true CN101631897B (zh) 2011-10-12

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CN2008800081158A Expired - Fee Related CN101631897B (zh) 2007-02-21 2008-02-21 用于蚀刻半导体结构的具有脉冲样品偏压的脉冲等离子体系统
CN200880008116A Pending CN101636822A (zh) 2007-02-21 2008-02-21 用于蚀刻半导体结构的具有脉冲反应气体补充的脉冲等离子体系统

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CN200880008116A Pending CN101636822A (zh) 2007-02-21 2008-02-21 用于蚀刻半导体结构的具有脉冲反应气体补充的脉冲等离子体系统

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Country Link
US (1) US7718538B2 (https=)
JP (2) JP5374388B2 (https=)
KR (1) KR101445299B1 (https=)
CN (2) CN101631897B (https=)
TW (1) TWI458008B (https=)
WO (1) WO2008103456A2 (https=)

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Also Published As

Publication number Publication date
JP2010519758A (ja) 2010-06-03
US7718538B2 (en) 2010-05-18
TW200845192A (en) 2008-11-16
CN101636822A (zh) 2010-01-27
WO2008103456A8 (en) 2009-10-15
KR101445299B1 (ko) 2014-09-26
JP2014039050A (ja) 2014-02-27
JP5774071B2 (ja) 2015-09-02
CN101631897A (zh) 2010-01-20
KR20100014502A (ko) 2010-02-10
TWI458008B (zh) 2014-10-21
US20080197110A1 (en) 2008-08-21
WO2008103456A3 (en) 2008-10-23
JP5374388B2 (ja) 2013-12-25
WO2008103456A2 (en) 2008-08-28

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