KR101445299B1 - 반도체 구조물을 에칭하기 위한 펄스화된 샘플 바이어스를 가지는 펄스화된 플라즈마 시스템 - Google Patents

반도체 구조물을 에칭하기 위한 펄스화된 샘플 바이어스를 가지는 펄스화된 플라즈마 시스템 Download PDF

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KR101445299B1
KR101445299B1 KR1020097019679A KR20097019679A KR101445299B1 KR 101445299 B1 KR101445299 B1 KR 101445299B1 KR 1020097019679 A KR1020097019679 A KR 1020097019679A KR 20097019679 A KR20097019679 A KR 20097019679A KR 101445299 B1 KR101445299 B1 KR 101445299B1
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sample
plasma
pulsed
etch
state
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KR20100014502A (ko
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김태원
이경태
알렉산더 패터슨
발렌틴 엔. 투도로우
샤샨크 씨. 데쉬무크
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020097019679A 2007-02-21 2008-02-21 반도체 구조물을 에칭하기 위한 펄스화된 샘플 바이어스를 가지는 펄스화된 플라즈마 시스템 Expired - Fee Related KR101445299B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/677,472 2007-02-21
US11/677,472 US7718538B2 (en) 2007-02-21 2007-02-21 Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
PCT/US2008/002371 WO2008103456A2 (en) 2007-02-21 2008-02-21 Pulsed plasma system with pulsed sample bias for etching semiconductor structures

Publications (2)

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KR20100014502A KR20100014502A (ko) 2010-02-10
KR101445299B1 true KR101445299B1 (ko) 2014-09-26

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US (1) US7718538B2 (https=)
JP (2) JP5374388B2 (https=)
KR (1) KR101445299B1 (https=)
CN (2) CN101631897B (https=)
TW (1) TWI458008B (https=)
WO (1) WO2008103456A2 (https=)

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JP2010519758A (ja) 2010-06-03
US7718538B2 (en) 2010-05-18
TW200845192A (en) 2008-11-16
CN101636822A (zh) 2010-01-27
WO2008103456A8 (en) 2009-10-15
JP2014039050A (ja) 2014-02-27
JP5774071B2 (ja) 2015-09-02
CN101631897A (zh) 2010-01-20
KR20100014502A (ko) 2010-02-10
TWI458008B (zh) 2014-10-21
US20080197110A1 (en) 2008-08-21
CN101631897B (zh) 2011-10-12
WO2008103456A3 (en) 2008-10-23
JP5374388B2 (ja) 2013-12-25
WO2008103456A2 (en) 2008-08-28

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