GB2505685B - Method of coating and etching - Google Patents
Method of coating and etchingInfo
- Publication number
- GB2505685B GB2505685B GB1215996.8A GB201215996A GB2505685B GB 2505685 B GB2505685 B GB 2505685B GB 201215996 A GB201215996 A GB 201215996A GB 2505685 B GB2505685 B GB 2505685B
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32348—Dielectric barrier discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1215996.8A GB2505685B (en) | 2012-09-07 | 2012-09-07 | Method of coating and etching |
PCT/GB2013/052339 WO2014037736A1 (en) | 2012-09-07 | 2013-09-06 | Method of coating and etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1215996.8A GB2505685B (en) | 2012-09-07 | 2012-09-07 | Method of coating and etching |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201215996D0 GB201215996D0 (en) | 2012-10-24 |
GB2505685A GB2505685A (en) | 2014-03-12 |
GB2505685B true GB2505685B (en) | 2015-11-04 |
Family
ID=47137103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1215996.8A Expired - Fee Related GB2505685B (en) | 2012-09-07 | 2012-09-07 | Method of coating and etching |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB2505685B (en) |
WO (1) | WO2014037736A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016104852B4 (en) * | 2016-03-16 | 2017-11-09 | Leibniz - Institut Für Analytische Wissenschaften - Isas - E.V. | Method for ionizing gaseous samples by means of dielectrically impeded discharge and for subsequent analysis of the generated sample ions in an analyzer |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5308650A (en) * | 1991-07-06 | 1994-05-03 | Schott Glaswerke | Process and apparatus for the ignition of CVD plasmas |
US20040050685A1 (en) * | 2000-11-14 | 2004-03-18 | Takuya Yara | Method and device for atmospheric plasma processing |
EP1627934A2 (en) * | 2004-08-13 | 2006-02-22 | Ngk Insulators, Ltd. | Thin films and a method for producing the same |
US20070037408A1 (en) * | 2005-08-10 | 2007-02-15 | Hitachi Metals, Ltd. | Method and apparatus for plasma processing |
US20080124488A1 (en) * | 2006-11-10 | 2008-05-29 | Schott Ag | Method and apparatus for plasma enhanced chemical vapor deposition |
US20080197110A1 (en) * | 2007-02-21 | 2008-08-21 | Tae Won Kim | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates |
US20100075077A1 (en) * | 2006-12-12 | 2010-03-25 | Matthias Bicker | Container having improved ease of discharge product residue, and method for the production thereof |
US20120121817A1 (en) * | 2009-07-13 | 2012-05-17 | Ngk Insulators, Ltd. | Method for producing diamond-like carbon film body |
-
2012
- 2012-09-07 GB GB1215996.8A patent/GB2505685B/en not_active Expired - Fee Related
-
2013
- 2013-09-06 WO PCT/GB2013/052339 patent/WO2014037736A1/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5308650A (en) * | 1991-07-06 | 1994-05-03 | Schott Glaswerke | Process and apparatus for the ignition of CVD plasmas |
US20040050685A1 (en) * | 2000-11-14 | 2004-03-18 | Takuya Yara | Method and device for atmospheric plasma processing |
EP1627934A2 (en) * | 2004-08-13 | 2006-02-22 | Ngk Insulators, Ltd. | Thin films and a method for producing the same |
US20070037408A1 (en) * | 2005-08-10 | 2007-02-15 | Hitachi Metals, Ltd. | Method and apparatus for plasma processing |
US20080124488A1 (en) * | 2006-11-10 | 2008-05-29 | Schott Ag | Method and apparatus for plasma enhanced chemical vapor deposition |
US20100075077A1 (en) * | 2006-12-12 | 2010-03-25 | Matthias Bicker | Container having improved ease of discharge product residue, and method for the production thereof |
US20080197110A1 (en) * | 2007-02-21 | 2008-08-21 | Tae Won Kim | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates |
US20120121817A1 (en) * | 2009-07-13 | 2012-05-17 | Ngk Insulators, Ltd. | Method for producing diamond-like carbon film body |
Non-Patent Citations (2)
Title |
---|
1996 1st International Symposium on Plasma Process-Induced Damage, 13-14 May, 1996, Santa Clara, CA, USA, Cheung et al., "Sub-quarter micron poly-Si etching with positive pulse biasing technique", pages 234 - 236. * |
Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, Vol. 1, 1991, New York, USA, Mizuno et al., "Structure of ultra-short pulsed discharge plasma", pages 708 - 712. * |
Also Published As
Publication number | Publication date |
---|---|
GB2505685A (en) | 2014-03-12 |
GB201215996D0 (en) | 2012-10-24 |
WO2014037736A1 (en) | 2014-03-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20200907 |