SG11201503113VA - Method for forming of siliceous film and siliceous film formed using same - Google Patents

Method for forming of siliceous film and siliceous film formed using same

Info

Publication number
SG11201503113VA
SG11201503113VA SG11201503113VA SG11201503113VA SG11201503113VA SG 11201503113V A SG11201503113V A SG 11201503113VA SG 11201503113V A SG11201503113V A SG 11201503113VA SG 11201503113V A SG11201503113V A SG 11201503113VA SG 11201503113V A SG11201503113V A SG 11201503113VA
Authority
SG
Singapore
Prior art keywords
siliceous film
forming
same
film formed
siliceous
Prior art date
Application number
SG11201503113VA
Inventor
Masanobu Hayashi
Tatsuro Nagahara
Hayashi Masanobu
Nagahara Tatsuro
Original Assignee
Az Electronic Materials Luxembourg S A R I
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Luxembourg S A R I filed Critical Az Electronic Materials Luxembourg S A R I
Publication of SG11201503113VA publication Critical patent/SG11201503113VA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/007—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
SG11201503113VA 2012-11-22 2013-11-15 Method for forming of siliceous film and siliceous film formed using same SG11201503113VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012256062A JP6060460B2 (en) 2012-11-22 2012-11-22 Method for forming siliceous film and siliceous film formed by the same method
PCT/JP2013/080886 WO2014080841A1 (en) 2012-11-22 2013-11-15 Method for forming of siliceous film and siliceous film formed using same

Publications (1)

Publication Number Publication Date
SG11201503113VA true SG11201503113VA (en) 2015-06-29

Family

ID=50776024

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201503113VA SG11201503113VA (en) 2012-11-22 2013-11-15 Method for forming of siliceous film and siliceous film formed using same

Country Status (9)

Country Link
US (1) US10000386B2 (en)
EP (1) EP2924717A4 (en)
JP (1) JP6060460B2 (en)
KR (2) KR102119371B1 (en)
CN (1) CN104885204B (en)
IL (1) IL238832B (en)
SG (1) SG11201503113VA (en)
TW (1) TWI600614B (en)
WO (1) WO2014080841A1 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3414278A1 (en) 2016-02-10 2018-12-19 Koninklijke Philips N.V. Vapor-phase curing catalysis and passivation of siloxane resins in led applications
US10647578B2 (en) 2016-12-11 2020-05-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP6796559B2 (en) * 2017-07-06 2020-12-09 東京エレクトロン株式会社 Etching method and residue removal method
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
CN111095513B (en) 2017-08-18 2023-10-31 应用材料公司 High-pressure high-temperature annealing chamber
CN107660064B (en) * 2017-09-29 2020-06-05 中国科学院化学研究所 Heat-conducting insulating plate, preparation method thereof and electronic component
CN117936420A (en) 2017-11-11 2024-04-26 微材料有限责任公司 Gas delivery system for high pressure processing chamber
JP2021503714A (en) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Capacitor system for high pressure processing system
KR102192462B1 (en) * 2017-12-14 2020-12-17 삼성에스디아이 주식회사 Composition for forming silica layer, silica layer, and electronic device
WO2019165093A1 (en) 2018-02-21 2019-08-29 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Perhydropolysilazane compositions and methods for forming oxide films using same
KR102539390B1 (en) * 2018-02-22 2023-06-05 어플라이드 머티어리얼스, 인코포레이티드 Methods for processing mask substrates to enable better film quality
KR20230079236A (en) 2018-03-09 2023-06-05 어플라이드 머티어리얼스, 인코포레이티드 High pressure annealing process for metal containing materials
JP6752249B2 (en) * 2018-03-27 2020-09-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing methods, substrate processing devices and programs
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
JP6475388B1 (en) * 2018-07-18 2019-02-27 信越化学工業株式会社 Polysilazane-containing composition
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
JP7390195B2 (en) 2020-01-17 2023-12-01 東京エレクトロン株式会社 Silicon film formation method
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2243527A1 (en) 1972-09-05 1974-04-18 Bayer Ag MOLDED BODIES FROM HOMOGENOUS MIXTURES OF SILICON CARBIDE AND SILICON NITRIDE AND THE PROCESS FOR THEIR PRODUCTION
JPS60145903A (en) 1983-12-29 1985-08-01 Toa Nenryo Kogyo Kk Synthesis of inorganic polysilazane
JPS6189230A (en) 1984-10-09 1986-05-07 Toa Nenryo Kogyo Kk Production of polyorganohydrosilazane
JPH01132128A (en) * 1987-11-18 1989-05-24 Hitachi Ltd Manufacture of silica film
EP0781815B1 (en) 1995-07-13 2010-11-17 AZ Electronic Materials USA Corp. Composition for forming ceramic substances and process for producing ceramic substances
JPH09183663A (en) * 1995-10-30 1997-07-15 Tonen Corp Method of applying sio2 based ceramic on plastic film
WO1997024391A1 (en) 1995-12-28 1997-07-10 Tonen Corporation Process for producing polysilazane
JP2904110B2 (en) * 1996-04-02 1999-06-14 日本電気株式会社 Method for manufacturing semiconductor device
JP3919862B2 (en) * 1996-12-28 2007-05-30 Ａｚエレクトロニックマテリアルズ株式会社 Method for forming low dielectric constant siliceous film and siliceous film
JP3178412B2 (en) 1998-04-27 2001-06-18 日本電気株式会社 Method of forming trench isolation structure
US6191022B1 (en) 1999-04-18 2001-02-20 Cts Corporation Fine pitch solder sphere placement
JP5020425B2 (en) 2000-04-25 2012-09-05 Ａｚエレクトロニックマテリアルズ株式会社 Method for embedding fine grooves with siliceous material
US6541401B1 (en) * 2000-07-31 2003-04-01 Applied Materials, Inc. Wafer pretreatment to decrease rate of silicon dioxide deposition on silicon nitride compared to silicon substrate
JP3934323B2 (en) * 2000-10-11 2007-06-20 株式会社Ｓｏｋｕｄｏ Substrate manufacturing method and substrate processing apparatus
US20040194511A1 (en) * 2002-02-01 2004-10-07 Chih-Hsing Cheng Sol-gel-derived halogen-doped glass
JP4217103B2 (en) * 2003-04-25 2009-01-28 東京エレクトロン株式会社 Heat treatment method and heat treatment apparatus
KR100667063B1 (en) * 2003-05-08 2007-01-10 삼성에스디아이 주식회사 Method of manufacturing a substrate for organic electroluminescent display device
JP4621613B2 (en) * 2006-03-09 2011-01-26 株式会社東芝 Manufacturing method of semiconductor device
JP5306669B2 (en) * 2008-02-29 2013-10-02 ＡｚエレクトロニックマテリアルズＩｐ株式会社 Method for forming siliceous film and siliceous film formed thereby
JP2010003983A (en) * 2008-06-23 2010-01-07 Az Electronic Materials Kk Shallow trench isolation structure, and formation method thereof
JP2010267716A (en) * 2009-05-13 2010-11-25 Elpida Memory Inc Method for manufacturing low dielectric constant insulating film, semiconductor device, and method for manufacturing the same
US20120083133A1 (en) * 2010-10-05 2012-04-05 Applied Materials, Inc. Amine curing silicon-nitride-hydride films
TW201318782A (en) 2011-11-02 2013-05-16 New Way Tools Co Ltd Adjustable wrench with ratcheting function

Also Published As

Publication number Publication date
KR20190002763A (en) 2019-01-08
IL238832B (en) 2018-05-31
EP2924717A1 (en) 2015-09-30
JP6060460B2 (en) 2017-01-18
KR101970860B1 (en) 2019-04-19
KR20150088815A (en) 2015-08-03
KR102119371B1 (en) 2020-06-08
EP2924717A4 (en) 2016-02-17
WO2014080841A1 (en) 2014-05-30
TW201427899A (en) 2014-07-16
TWI600614B (en) 2017-10-01
US20150298980A1 (en) 2015-10-22
IL238832A0 (en) 2015-06-30
JP2014103351A (en) 2014-06-05
US10000386B2 (en) 2018-06-19
CN104885204A (en) 2015-09-02
CN104885204B (en) 2017-04-12

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