TWI446543B - 薄膜電晶體以及具有該薄膜電晶體之顯示裝置 - Google Patents

薄膜電晶體以及具有該薄膜電晶體之顯示裝置 Download PDF

Info

Publication number
TWI446543B
TWI446543B TW097141662A TW97141662A TWI446543B TW I446543 B TWI446543 B TW I446543B TW 097141662 A TW097141662 A TW 097141662A TW 97141662 A TW97141662 A TW 97141662A TW I446543 B TWI446543 B TW I446543B
Authority
TW
Taiwan
Prior art keywords
impurity element
donor
film
microcrystalline semiconductor
gate insulating
Prior art date
Application number
TW097141662A
Other languages
English (en)
Chinese (zh)
Other versions
TW200943551A (en
Inventor
Shunpei Yamazaki
Yasuhiro Jinbo
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW200943551A publication Critical patent/TW200943551A/zh
Application granted granted Critical
Publication of TWI446543B publication Critical patent/TWI446543B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
TW097141662A 2007-11-01 2008-10-29 薄膜電晶體以及具有該薄膜電晶體之顯示裝置 TWI446543B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007284717 2007-11-01

Publications (2)

Publication Number Publication Date
TW200943551A TW200943551A (en) 2009-10-16
TWI446543B true TWI446543B (zh) 2014-07-21

Family

ID=40587200

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097141662A TWI446543B (zh) 2007-11-01 2008-10-29 薄膜電晶體以及具有該薄膜電晶體之顯示裝置

Country Status (4)

Country Link
US (1) US8304779B2 (enExample)
JP (1) JP5311955B2 (enExample)
CN (1) CN101425544B (enExample)
TW (1) TWI446543B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5311957B2 (ja) * 2007-10-23 2013-10-09 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP5436017B2 (ja) * 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
KR101602252B1 (ko) * 2008-06-27 2016-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 반도체장치 및 전자기기
KR101650917B1 (ko) 2009-03-09 2016-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터
DE102009025971A1 (de) * 2009-06-15 2010-12-16 Aixtron Ag Verfahren zum Einrichten eines Epitaxie-Reaktors
KR101291395B1 (ko) 2009-06-30 2013-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
WO2011007682A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101342179B1 (ko) 2009-09-24 2013-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자 및 그 제조 방법
KR20120084751A (ko) 2009-10-05 2012-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102668096B (zh) 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法
KR101930230B1 (ko) * 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
US8598586B2 (en) * 2009-12-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
JP5752447B2 (ja) 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
JP2012004471A (ja) * 2010-06-21 2012-01-05 Toshiba Corp 半導体装置及びその製造方法
CN102386072B (zh) 2010-08-25 2016-05-04 株式会社半导体能源研究所 微晶半导体膜的制造方法及半导体装置的制造方法
TWI538218B (zh) 2010-09-14 2016-06-11 半導體能源研究所股份有限公司 薄膜電晶體
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
US8828859B2 (en) * 2011-02-11 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor film and method for manufacturing semiconductor device
JP5832780B2 (ja) 2011-05-24 2015-12-16 株式会社半導体エネルギー研究所 半導体装置の製造方法
CN102646676B (zh) * 2011-11-03 2015-06-10 京东方科技集团股份有限公司 一种tft阵列基板
CN103531639B (zh) * 2013-10-22 2016-09-07 合肥京东方光电科技有限公司 薄膜晶体管及其制备方法、阵列基板、显示装置
CN104766859B (zh) * 2015-04-28 2017-09-01 深圳市华星光电技术有限公司 Tft基板的制作方法及其结构
CN108615771A (zh) * 2018-07-02 2018-10-02 惠科股份有限公司 一种薄膜晶体管及其制造方法、以及显示面板
CN111799280A (zh) 2020-07-20 2020-10-20 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN113109415B (zh) * 2021-03-26 2024-06-14 南昌大学 一种适用于二次离子质谱分析的多层膜界面位置表征方法

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
USRE34658E (en) * 1980-06-30 1994-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device of non-single crystal-structure
JPS5892217A (ja) 1981-11-28 1983-06-01 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS60160170A (ja) 1984-01-31 1985-08-21 Seiko Instr & Electronics Ltd 薄膜トランジスタ
JPS6262073A (ja) 1985-09-11 1987-03-18 Ishikawajima Harima Heavy Ind Co Ltd ポペツト弁の温度制御装置
JPS6267872A (ja) 1985-09-20 1987-03-27 Toshiba Corp 非晶質シリコン薄膜トランジスタ
JPS63258072A (ja) 1987-04-15 1988-10-25 Nec Corp 電界効果トランジスタ
JP2650946B2 (ja) 1988-03-04 1997-09-10 株式会社日立製作所 薄膜電界効果素子
JPH0253941A (ja) 1988-08-17 1990-02-22 Tsudakoma Corp 織機の運転装置
US5221631A (en) * 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer
JP2839529B2 (ja) * 1989-02-17 1998-12-16 株式会社東芝 薄膜トランジスタ
EP0459763B1 (en) * 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
US5514879A (en) * 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
JPH05226656A (ja) 1992-02-13 1993-09-03 Hitachi Ltd 薄膜半導体装置及びその製造方法
US5843225A (en) * 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
JP3497198B2 (ja) 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
US6835523B1 (en) * 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
JPH06326312A (ja) 1993-05-14 1994-11-25 Toshiba Corp アクティブマトリクス型表示装置
US6183816B1 (en) * 1993-07-20 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the coating
TW303526B (enExample) * 1994-12-27 1997-04-21 Matsushita Electric Industrial Co Ltd
JPH08201851A (ja) * 1995-01-31 1996-08-09 Sharp Corp アクティブマトリクス基板
JP2833545B2 (ja) * 1995-03-06 1998-12-09 日本電気株式会社 半導体装置の製造方法
JP3907726B2 (ja) 1995-12-09 2007-04-18 株式会社半導体エネルギー研究所 微結晶シリコン膜の作製方法、半導体装置の作製方法及び光電変換装置の作製方法
KR100257158B1 (ko) 1997-06-30 2000-05-15 김영환 박막 트랜지스터 및 그의 제조 방법
JPH11177094A (ja) * 1997-12-08 1999-07-02 Advanced Display Inc 半導体薄膜トランジスタおよび該半導体薄膜トランジスタを含む半導体薄膜トランジスタアレイ基板
US6909114B1 (en) * 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
JP2000277439A (ja) 1999-03-25 2000-10-06 Kanegafuchi Chem Ind Co Ltd 結晶質シリコン系薄膜のプラズマｃｖｄ方法およびシリコン系薄膜光電変換装置の製造方法
JP2001217424A (ja) 2000-02-03 2001-08-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびそれを用いた液晶表示装置
US7071037B2 (en) * 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2004014958A (ja) 2002-06-11 2004-01-15 Fuji Electric Holdings Co Ltd 薄膜多結晶太陽電池とその製造方法
TW571342B (en) * 2002-12-18 2004-01-11 Au Optronics Corp Method of forming a thin film transistor
EP1445802A1 (en) * 2003-02-06 2004-08-11 Centre National De La Recherche Scientifique (Cnrs) Transistor for active matrix display, a display unit comprising the said transistor and a method for producing said transistor
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
US7365361B2 (en) * 2003-07-23 2008-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2005050905A (ja) 2003-07-30 2005-02-24 Sharp Corp シリコン薄膜太陽電池の製造方法
JP2005167051A (ja) 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
US7205171B2 (en) * 2004-02-11 2007-04-17 Au Optronics Corporation Thin film transistor and manufacturing method thereof including a lightly doped channel
EP1624333B1 (en) * 2004-08-03 2017-05-03 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method thereof, and television set
CN100533746C (zh) * 2004-08-03 2009-08-26 株式会社半导体能源研究所 显示器件、其制造方法以及电视机
JP5013393B2 (ja) 2005-03-30 2012-08-29 東京エレクトロン株式会社 プラズマ処理装置と方法
JP4597792B2 (ja) 2005-06-27 2010-12-15 東京エレクトロン株式会社 処理ガス供給構造およびプラズマ処理装置
JP4777717B2 (ja) 2005-08-10 2011-09-21 東京エレクトロン株式会社 成膜方法、プラズマ処理装置および記録媒体
US7576359B2 (en) * 2005-08-12 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
KR100719566B1 (ko) * 2005-10-22 2007-05-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 및 이를 구비한 평판 표시 장치
TW200837956A (en) * 2007-03-14 2008-09-16 Chunghwa Picture Tubes Ltd Thin film transistor
JP5331389B2 (ja) * 2007-06-15 2013-10-30 株式会社半導体エネルギー研究所 表示装置の作製方法
JP4488039B2 (ja) * 2007-07-25 2010-06-23 ソニー株式会社 薄膜半導体装置の製造方法
JP2009071289A (ja) * 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR101484297B1 (ko) * 2007-08-31 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 표시장치의 제작방법
US8030147B2 (en) * 2007-09-14 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and display device including the thin film transistor
US20090090915A1 (en) * 2007-10-05 2009-04-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
KR101455304B1 (ko) * 2007-10-05 2014-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법
JP5311957B2 (ja) 2007-10-23 2013-10-09 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP5395415B2 (ja) * 2007-12-03 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
TWI481029B (zh) * 2007-12-03 2015-04-11 半導體能源研究所股份有限公司 半導體裝置
KR101523353B1 (ko) * 2007-12-03 2015-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막트랜지스터 및 반도체 장치
US7968880B2 (en) * 2008-03-01 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device

Also Published As

Publication number Publication date
JP5311955B2 (ja) 2013-10-09
TW200943551A (en) 2009-10-16
US20090114921A1 (en) 2009-05-07
CN101425544A (zh) 2009-05-06
CN101425544B (zh) 2012-12-05
US8304779B2 (en) 2012-11-06
JP2009135436A (ja) 2009-06-18

Similar Documents

Publication Publication Date Title
TWI446543B (zh) 薄膜電晶體以及具有該薄膜電晶體之顯示裝置
US8558236B2 (en) Semiconductor device
TWI470805B (zh) 薄膜電晶體，具有該薄膜電晶體的顯示裝置，和其製造方法
TWI535035B (zh) 薄膜電晶體，具有該薄膜電晶體的顯示裝置，和其製造方法
JP5395415B2 (ja) 薄膜トランジスタの作製方法
JP5503857B2 (ja) 薄膜トランジスタの作製方法
TWI521712B (zh) 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法
JP5101471B2 (ja) 微結晶半導体膜及び薄膜トランジスタの作製方法
US8860030B2 (en) Thin film transistor and display device including the same
JP5311957B2 (ja) 表示装置及びその作製方法
JP2009076753A (ja) 薄膜トランジスタ及び薄膜トランジスタを有する表示装置の作製方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees