TWI398461B - 環氧樹脂組成物及半導體裝置 - Google Patents

環氧樹脂組成物及半導體裝置 Download PDF

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TWI398461B
TWI398461B TW94107659A TW94107659A TWI398461B TW I398461 B TWI398461 B TW I398461B TW 94107659 A TW94107659 A TW 94107659A TW 94107659 A TW94107659 A TW 94107659A TW I398461 B TWI398461 B TW I398461B
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epoxy resin
resin composition
carboxyl group
phenol
semiconductor encapsulation
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TW200609263A (en
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Nikaido Hiroki
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Sumitomo Bakelite Co
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Description

環氧樹脂組成物及半導體裝置
本發明係關於半導體密封用環氧樹脂組成物及半導體裝置。
近年來，於電子機器之小型化、輕量化、高性能化之市場動向中，年年發展半導體的高集成化，並且促進半導體封裝的表面實裝化。更且，考慮地球環境的企業活動受到重視，且直到2006年為止要求將有害物質之鉛於特定用途以外完全廢除。由於無鉛焊料的熔點為比先前的鉛/錫焊料高，故紅外線迴流、焊料浸漬等之焊料實裝時的溫度亦由以往的220~240℃，變高至往後的240℃~260℃。經由此類實裝溫度的上升，於實裝時在半導體裝置之樹脂部造成裂痕，產生無法保證半導體裝置之信賴性的問題。更且關於導線架(lead frame)由脫鉛的觀點而言，亦已發展出應用事先施以鎳、鈀鍍敷以改變外裝焊料鍍敷的導線架。鎳、鈀鍍敷係與環氧樹脂組成物的密黏性低，且於實裝時在界面發生剝離，於樹脂部亦易造成裂痕。
對於此類課題，經由應用低吸水性及低彈性率之環氧樹脂組成物和硬化劑（例如，參照日本專利特開平9－3161號公報（第2~5頁）、特開平9－235353號公報（第2~7頁）、特開平11－140277號公報（第2~11頁）），則可應付關於實裝溫度的上升。其半面、顯示此類低吸水性及低彈性率的環氧樹脂組成物為交聯密度低，且剛硬化後的成形物柔軟。其結果，將於連續生產中發生樹脂卡入模具等之成形性的缺點，且具有令生產性降低的問題。
又，作為提高生產性的組合，已提案有應用高脫模效果的脫模劑（例如，參照日本專利特開2002－80695號公報（第2~5頁））。但是，高脫模效果的脫模劑必然性地易浮出於成形品表面，若連續生產則具有顯著污染成形品外觀的缺點。作為成形品外觀優良的環氧樹脂組成物，已提案有添加具有特定構造之聚矽氧烷化合物的手法等（例如，參照日本專利特開2001－310930號公報（第2~8頁）、日本專利特開2002－97344號公報（第2~10頁））。但是，該環氧樹脂組成物因為脫模性不夠充分，故於連續成形中於通氣孔樹脂被卡住，產生樹脂未充填於模具等之成形缺點等、引起生產性降低的問題。由上述情事，要求可應付焊料耐熱性、脫模性、連續成形性、成形品外觀、模具污染等全部課題的半導體密封用環氧樹脂組成物。
本發明係用以解決如上述之問題點而提出者，其目的為提供焊料耐熱性良好且可應付脫模性，連續成形性、成形品外觀、模具污染等全部課題，且生產性優良的半導體密封用環氧樹脂組成物及半導體裝置。
此類目的為根據下述[1]~[7]中記載之本發明而達成。[1]一種半導體密封用環氧樹脂組成物，其特徵為以(A)環氧樹脂、(B)苯酚樹脂、(C)(C－1)具有羧基之有機聚矽氧烷及/或(C－2)具有羧基之有機聚矽氧烷與環氧樹脂的反應生成物、以及(D)甘油三脂肪酸酯作為必須成分、[2]如第[1]項之半導體密封用環氧樹脂組成物，其中，該(C)中之具有羧基之有機聚矽氧烷為一般式(1)所示的有機聚矽氧烷、 （式中，R為至少一個以上為具有羧基之碳數1~40個的有機基，剩餘的基為選自氫、苯基、或甲基之基，彼此可為相同或相異。n為平均值且為1~50之正數。）
[3]如第[1]或[2]項之半導體密封用環氧樹脂組成物，其中該(D)甘油三脂肪酸酯為甘油與碳數24~36個之飽和脂肪酸的三酯、[4]如第[1]、[2]或[3]項中任一項之半導體密封用環氧樹脂組成物，其中該(C)成分與該(D)成分之重量比(C)/(D)為3/1~1/5、[5]如第[1]至[4]項中任一項之半導體密封用環氧樹脂組成物，其中該(A)環氧樹脂為一般式(2)所示的環氧樹脂、 （式中，n為平均值且為1~10之正數）
[6]如第[1]至[5]項中任一項之半導體密封用環氧樹脂組成物，其中該(B)苯酚樹脂為一般式(3)所示的苯酚樹脂、 （式中，n為平均值且為1~10之正數）
[7]一種半導體裝置，其特徵為使用如第[1]至[6]項中任一項之半導體密封用環氧樹脂組成物將半導體元件予以密封而成。
本發明為經由配合具有羧基之有機聚矽氧烷及甘油三脂肪酸酯作為必須成分，則可取得在半導體元件之密封成形時顯示出脫模性、連續成形性、成形品外觀良好且亦難發生模具污染之優良生產性，並且半導體裝置實裝時之焊料耐熱性優良的半導體密封用環氧樹脂組成物。
以下，詳細說明關於本發明。
本發明所用之(A)環氧樹脂係指於一分子內具有二個以上環氧基之單體、低聚物、聚合物全部，且其分子量、分子構造並無特別限定。可列舉例如聯苯型環氧樹脂、雙酚型環氧樹脂、二苯乙烯型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、三酚甲烷型環氧樹脂、烷基改質三酚甲烷型環氧樹脂、含三核環氧樹脂、二環戊二烯改質苯酚型環氧樹脂、苯酚芳烷基型環氧樹脂（具有伸苯基骨架、伸聯苯骨架等）、萘酚型環氧樹脂等。其可單獨或混合使用亦可。
由提高耐焊料裂痕性的觀點而言，其中以苯酚芳烷基型環氧樹脂為佳，更且以具有伸聯苯骨架等之苯酚芳烷基型環氧樹脂為佳，特別，以一般式(2)所示之環氧樹脂為佳。
（式中，n為平均值且為1~10之正數）
本發明所用之(B)苯酚樹脂為指一分子內具有二個以上酚性羥基之單體、低聚物、聚合物全部，且其分子量、分子構造並無特別限定。可列舉例如苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、二環戊二烯改質苯酚樹脂、萜烯改質苯酚樹脂、三酚甲烷型樹脂、苯酚芳烷基樹脂（具有伸苯基骨架、伸聯苯基骨架等）、萘酚芳烷基樹脂等。其可單獨或混合使用亦可。
由提高耐焊料裂痕性之觀點而言，其中以苯酚芳烷基樹脂為佳，更且以具有伸聯苯骨架等之苯酚芳烷基樹脂為佳，特別，以一般式(3)所示之苯酚樹脂為佳。又，苯酚樹脂之配合量以全環氧樹脂之環氧基數與全苯酚樹脂之酚性羥基數之比為0.8~1.3為佳。
（式中，n為平均值，且為1~10之正數）
本發明所用之(C)成分為(C－1)具有羧基之有機聚矽氧烷及/或(C－2)具有羧基之有機聚矽氧烷與環氧樹脂的反應生成物。
本發明之(C)成分中所用之具有羧基之有機聚矽氧烷為於一分子中具有一個以上羧基的有機聚矽氧烷，必須與甘油三脂肪酸酯併用。於單獨使用具有羧基之有機聚矽氧烷之情況，脫模性不夠充分，連續成形性降低。於單獨使用甘油三脂肪酸酯之情況為成形品的外觀差。經由將具有羧基之有機聚矽氧烷與甘油三脂肪酸酯併用，則可令甘油三脂肪酸酯相溶化，且令成形品之外觀與脫模性兩相成立，並且連續成形為良好。本發明之(C)成分與甘油三脂肪酸酯(D)的併合配合比例(C)/(D)期望以重量比3/1－1/5，且此範圍為效果最高。
(C)成分所用之具有羧基的有機聚矽氧烷，期望為一般式(1)所示的有機聚矽氧烷。一般式(1)之式中的R為有機基，全有機基內，至少一個以上為具有羧基之碳數1~40個的有機基，殘餘的有機基為選自氫、苯基、或甲基之基，彼此可為相同或相異亦可。具有羧基之有機基的碳數若超過上限，則與樹脂的相溶性惡化，且恐令成形品的外觀惡化。另外，一般式(1)所示之有機聚矽氧烷之具有羧基的有機基碳數，係指將有機基中之烴基與羧基之碳數予以合計者。
（式中，R為至少一個以上為具有羧基之碳數1~40個的有機基，殘餘的基為選自氫、苯基、或甲基之基，彼此可為相同或相異。n為平均值且為1~50之正數。）
又，R中，具有羧基之碳數1~40個的有機基並無特別限定，若為具有羧基且只要不損害本發明之效果，則亦可具有其他取代基，或亦可為羧基本身。具有羧基之碳數1~40個的有機基可列舉烴基中的氫為經羧基所取代者。於上述烴基中，包含直鏈狀、分支鏈狀及環狀烴類，更包含飽和及不飽和烴類。又，於環狀烴類中包含芳香族烴類和脂環式烴類。其等之中，亦以直鏈狀飽和烴基中之氫為經羧基所取代者為佳。其中亦以碳數為1~30個之直鏈狀飽和烴基中之氫為經羧基所取代者為佳。
又，一般式(1)中之n為平均值且為1~50之正數。作為具有羧基之有機聚矽氧烷以油狀為佳。n值若超過上限值，則有機聚矽氧烷單體的黏度變高且有流動性惡化之虞。若使用一般式(1)所示之有機聚矽氧烷，則不會引起流動性的降低，且成形品的外觀特別良好。
本發明之(C)成分亦可使用(C－2)具有羧基之有機聚矽氧烷與環氧樹脂的反應生成物。此情況，具有羧基之有機聚矽氧烷與環氧樹脂經由硬化促進劑而預先溶融、反應為佳。若如此處理，則難以發生連續成形後之模具污染，且連續成形性極為良好。此處所謂之硬化促進劑，若為促進羧基與環氧基之硬化反應者即可，且可使用與促進後述之環氧基與酚性羥基之硬化反應的硬化促進劑相同者。
具有羧基之有機聚矽氧烷的配合量為全環氧樹脂組成物中0.01~3重量%為佳。若低於下限則效果不夠充分且恐無法抑制脫模劑所造成的成形品外觀污染，若超過上限則恐有機聚矽氧烷本身造成污染成形品的外觀。
又，在不損害添加本發明所用之具有羧基之有機聚矽氧烷效果之範圍下，可併用其他有機聚矽氧烷。
本發明所用之甘油三脂肪酸酯為由甘油與飽和脂肪酸所得之三酯，亦稱為三酸甘油酯，脫模性非常優良。單酯、二酯為經由殘存羥基之影響而令環氧樹脂之硬化物的耐濕性降低，其結果對於焊料耐熱性造成不良影響，故為不佳。本發明所用之甘油三脂肪酸酯具體而言可列舉甘油三己酸酯、甘油三辛酸酯、甘油三癸酸酯、甘油三月桂酸酯、甘油三肉豆蔻酸酯、甘油三棕櫚酸酯、甘油三硬脂酸酯、甘油三花生酸酯、甘油三廿二酸酯、甘油三廿四酸酯、甘油三蠟酸酯、甘油三褐煤酸酯等。本發明所用之甘油三脂肪酸酯可為一分子內之脂肪酸基為相同之單一甘油酯，且亦可為一分子內含有二種或三種脂肪酸基的混合甘油酯。又，亦可混合使用二種以上之甘油三脂肪酸酯。其中以與碳數24~36個之飽和脂肪酸的甘油三脂肪酸酯，由脫模性與成形品外觀之觀點而言為佳。另外，本發明中之飽和脂肪酸的碳數係指將飽和脂肪酸中之烷基與羧基之碳數予以合計者。
在不損害添加將本發明所用之甘油與飽和脂肪酸酯化之甘油三脂肪酸酯的範圍下，亦可併用其他之脫模劑。可列舉例如巴西棕櫚蠟等之天然蠟、聚酯蠟等之合成蠟、硬脂酸鋅等之高級脂肪酸的金屬鹽類。
又，甘油三脂肪酸酯之配合量為於全環氧樹脂組成物中以0.02~1重量%為佳。若低於下限則無法取得充分的脫模性，若超過上限則恐引起成形品之外觀污染和密合性降低。
本發明之環氧樹脂組成物為以環氧樹脂、苯酚硬化劑、具有羧基之有機聚矽氧烷、及甘油三脂肪酸酯作為必須成分，且可配合硬化促進劑、無機充填材料等作為其他的主要構成成分。
本發明所用之硬化促進劑若為促進環氧基和酚性羥基之硬化反應者即可，且可使用一般密封材料所使用者。可列舉例如1, 8－二吖雙環(5, 4, 0)十一碳烯－7等之二吖雙環鏈烯及其衍生物、三苯膦、甲基二苯膦等之有機膦類、2－甲基咪唑等之咪唑化合物、四苯鏻－四苯基硼酸酯等之四取代鏻．四取代硼酸酯等，且其等可單獨或混合使用亦無妨。硬化促進劑之配合量為於全環氧樹脂組成物中以0.05~0.8重量%為佳。
本發明所用之無機充填材料可使用一般半導體密封用環氧樹脂組成物所使用者。可列舉例如熔融矽石、晶矽石、滑石、氧化鋁、氮化矽等，且最適使用者為球狀的熔融矽石。此等無機先填材料可單獨或混合使用亦無妨。又，以偶合劑將其等進行表面處理亦無妨。無機充填材料之形狀係為了改善流動性，故儘可能為正球狀，且以粒度分佈寬廣者為佳。無機充填材料的配合量為於全環氧樹脂組成物中以78~93重量%為佳。若低於下限值則無法取得充分的耐焊料性，若超過上限值則恐無法取得充分的流動性。
本發明之環氧樹脂組成物為由環氧樹脂、苯酚硬化劑、具有羧基之有機聚矽氧烷、甘油三脂肪酸酯、硬化促進劑、及無機充填材料所構成，更且於此以外，視需要適當配合環氧矽烷、硫醇矽烷、胺基矽烷、烷基矽烷、脲矽烷、乙烯基矽烷等之矽烷偶合劑、和鈦酸鹽偶合劑、鋁偶合劑、鋁/鋯偶合劑等之偶合劑、碳黑等之著色劑、矽酮油、橡膠等之低應力添加劑、溴化環氧樹脂和三氧化銻、氫氧化鋁、氫氧化鎂、硼酸鋅、鉬酸鋅、磷肌酸等之難燃劑等之添加劑亦無妨。
又，本發明之環氧樹脂組成物為使用混合器等將原料充分均勻混合後，再以熱輥或捏和機等予以熔融混練，冷卻後粉碎則可取得。
其次，圖1為示出關於使用本發明之環氧樹脂組成物將半導體元件密封而成之半導體裝置之一例的剖面構造圖。於晶片焊墊(die pod)102上，透過晶片接合材料硬化體106固定半導體元件101。半導體元件101與導線架104之間為以金屬線103予以接續。半導體元件101為藉由密封樹脂105而被密封。此半導體裝置為使用上述構成之本發明的環氧樹脂組成物作為密封樹脂105，且以轉移模鑄、壓模、噴射模鑄等習知的成形方法予以成形即可取得。
（實施例）
以下示出本發明之實施例，但本發明並非被限定於此。配合比例係以重量份表示。
＜實施例1＞
將E－1：式(2)所示之環氧樹脂（日本化藥（股）製、NC3000P、軟化點58℃、環氧當量274） 8.13重量份
H－1：式(3)所示之環氧樹脂（明和化成（股）製、MEH－7851SS、軟化點107℃、羥基當量203） 5.47重量份
有機聚矽氧烷1：式(4)所示之有機聚矽氧烷0.20重量份
甘油三硬脂酸酯 0.20重量份1, 8－二吖雙環(5, 4, 0)十一碳烯－7（以下，稱為DBU）混合，且使用熱輥，以95℃混練8分鐘且冷卻後粉碎，取得環氧樹脂組成物。所得之環氧樹脂組成物，以下列方法評價。結果示於表1。
[評價方法]
(1)螺旋式流動：使用低壓轉移成形機，於根據EMMI-1-66之螺旋式流動測定用模具中，以模具溫度175℃、注入壓力6.9MPa、硬化時間120秒鐘之條件注入環氧樹脂組成物，並測定流動長度。單位為公分。判定基準為未滿70公分視為不合格(×)、70公分以上視為合格(○)。
(2)連續成形性：使用低壓轉移成形機，以模具溫度175℃、注入壓力9.6MPa、硬化時間70秒鐘將80pQFP(CuL/F、封裝外尺寸：14mm×20mm×2mm厚、焊墊尺寸：6.5mm×6.5mm、晶片尺寸6.0mm×6.0mm)以連續成形至700次注料為止。判定基準為可完全無未充填等問題而連續成形至700次注料為止者視為◎，可完全無未充填等問題連續成形至500次注料為止者視為○，除此以外為×。
(3)成形品外觀及模具污染：於上述連續成形中對於經過500及700次注料之封裝及模具，以目視評價污染。封裝外觀判斷及模具污染基準為將700次注料為止無污染者以◎表示，500次注料為止無污染者以○表示，污染者以×表 示。
(4)焊料耐熱性：將根據上述連續成形之封裝以175℃、8小時進行後硬化，且所得之封裝以85℃、相對濕度85%進行加濕處理168小時後，分別於240℃和260℃之焊料槽中將各10個封裝予以浸漬10秒鐘。以顯微鏡觀察封裝，算出裂痕發生率[(裂痕發生率)=(發生外部裂痕之封裝數)/(全封裝數)×100](單位為%)。評價之封裝數為20個。 又，以超音波探傷裝置觀察半導體元件與環氧樹脂組成物界面之密黏狀態，評價有無剝離。評價之封裝數為20個。耐焊料裂痕性判斷基準為以240℃及260℃之裂痕發生率為0%且無剝離者視為◎，以240℃之裂痕發生率為0%且無剝離者視為○，發生裂痕或剝離者視為×。
<實施例2~8、參考例1~3、比較例1~6>
根據表1、表2之配合，同實施例1進行處理取得環氧樹脂組成物，且同實施例1評價。結果示於表1、表2。
實施例1所用者以外，且該實施例及比較例所用之原材料示於下。
將E-2：聯苯型環氧樹脂(Japan Epoxy Resin(股)製、YX-4000、環氧當量190g/eq、熔點105℃)
E-3：鄰甲酚酚醛清漆型環氧樹脂(日本化藥(股)製、EOCN-1020 62、環氧當量200g/eq、軟化點62℃)
H-2：對二甲苯改質酚醛清漆型苯酚樹脂(三井化學(股)製、XLC-4L、羥基當量168g/eq、軟化點62℃)
有機聚矽氧烷2：式(5)所示之有機聚矽氧烷
有機聚矽氧烷3：式(6)所示之有機聚矽氧烷
有機聚矽氧烷4：式(7)所示之有機聚矽氧烷
熔融反應物A：雙酚A型環氧樹脂（Japan Epoxy Resin製、YL－6810、環氧當量170g/eq、熔點47℃）66.1重量份以140℃加溫熔融，並添加有機聚矽氧烷3（式(6)所示之有機聚矽氧烷）33.1重量份及三苯膦0.8重量份，且熔融混合30分鐘，取得相當於(C－2)具有羧基之有機聚矽氧烷與環氧樹脂之反應生成物的熔融反應物A。
甘油三褐煤酸酯甘油二褐煤酸酯巴西棕櫚蠟
（產業上之可利用性）
若根據本發明，則可於半導體裝置實裝時顯示優良的焊料耐熱性，並且可解決半導體元件之密封成形時之先前缺陷的脫模型、連續成形性、成形品外觀、模具污染等之課題，故可適合使用於工業性的樹脂密封型半導體裝置，特別為表面實裝用之樹脂密封型半導體裝置的製造。
101．．．半導體元件
102．．．晶片焊墊
103．．．金屬線
104．．．導線架
105．．．密封樹脂
106．．．晶片接合材料硬化體
圖1表示出關於使用本發明之環氧樹脂組成物之半導體裝置之一例的剖面構造圖。
101．．．半導體元件
102．．．晶片焊墊
103．．．金屬線
104．．．導線架
105．．．密封樹脂
106．．．晶片接合材料硬化體

Claims (6)

  1. 一種半導體密封用環氧樹脂組成物，其特徵為含有(A)環氧樹脂、(B)苯酚樹脂、(C)(C-1)具有羧基之有機聚矽氧烷及/或(C-2)具有羧基之有機聚矽氧烷與環氧樹脂的反應生成物、以及(D)甘油三脂肪酸酯；上述(A)環氧樹脂為苯酚芳烷基型環氧樹脂，上述(B)苯酚樹脂為苯酚芳烷基樹脂，上述(D)甘油三脂肪酸酯於全環氧樹脂組成物中含有0.02~0.80重量%；上述(C)中之具有羧基之有機聚矽氧烷為一般式(1)所示的有機聚矽氧烷： (式中，R為至少二個以上為具有羧基之碳數1~40個的有機基，剩餘的基為選自氫、苯基、或甲基之基，彼此可為相同或相異；n為平均值且為1~50之正數)。
  2. 如申請專利範圍第1項之半導體密封用環氧樹脂組成物，其中，該(D)甘油三脂肪酸酯為甘油與碳數24~36個之飽和脂肪酸的三酯。
  3. 如申請專利範圍第1項之半導體密封用環氧樹脂組成物，其中，該(C)成分與該(D)成分之重量比(C)/(D)為3/1~1/5。
  4. 如申請專利範圍第1項之半導體密封用環氧樹脂組成物，其中，該(A)環氧樹脂為一般式(2)所示的環氧樹脂： (式中，n為平均值且為1~10之正數)。
  5. 如申請專利範圍第1項之半導體密封用環氧樹脂組成物，其中，該(B)苯酚樹脂為一般式(3)所示的苯酚樹脂： (式中，n為平均值且為1~10之正數)。
  6. 一種半導體裝置，其特徵為使用申請專利範圍第1項之半導體密封用環氧樹脂組成物將半導體元件予以密封而成。
TW94107659A 2004-03-16 2005-03-14 環氧樹脂組成物及半導體裝置 TWI398461B (zh)

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4590899B2 (ja) * 2004-03-30 2010-12-01 住友ベークライト株式会社 金型離型回復樹脂組成物及び半導体装置の製造方法
JP4765310B2 (ja) * 2004-12-24 2011-09-07 住友ベークライト株式会社 樹脂封止型半導体装置の製造方法
JP4973146B2 (ja) * 2006-11-20 2012-07-11 住友ベークライト株式会社 エポキシ樹脂組成物、封止用エポキシ樹脂組成物及び電子部品装置
JP5024073B2 (ja) * 2007-02-16 2012-09-12 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物及び半導体装置
JP5157473B2 (ja) * 2007-03-28 2013-03-06 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物及び半導体装置
JP4930145B2 (ja) * 2007-03-28 2012-05-16 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物及び半導体装置
JP4973322B2 (ja) * 2007-06-04 2012-07-11 住友ベークライト株式会社 エポキシ樹脂組成物及び半導体装置
JP5169285B2 (ja) * 2007-08-22 2013-03-27 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物及び半導体装置
JP5169288B2 (ja) * 2007-09-21 2013-03-27 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物及び半導体装置
JP5169287B2 (ja) * 2007-09-21 2013-03-27 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物及び半導体装置
KR101309820B1 (ko) * 2010-12-29 2013-09-23 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자
US10030141B2 (en) * 2012-10-19 2018-07-24 Mitsubishi Gas Chemical Company, Inc. Resin composition, pre-preg, laminate, metal foil-clad laminate, and printed wiring board
WO2014061812A1 (ja) * 2012-10-19 2014-04-24 三菱瓦斯化学株式会社 樹脂組成物、プリプレグ、積層板、及びプリント配線板
TWI637470B (zh) * 2016-04-19 2018-10-01 東芝股份有限公司 半導體封裝及其之製造方法
KR102112865B1 (ko) * 2017-11-06 2020-05-19 삼성에스디아이 주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000103938A (ja) * 1998-09-25 2000-04-11 Matsushita Electric Works Ltd 封止用のエポキシ樹脂組成物および半導体装置
JP2002220434A (ja) * 2001-01-26 2002-08-09 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6011973B2 (ja) * 1981-10-21 1985-03-29 ト−レ・シリコ−ン株式会社 成形用エポキシ樹脂組成物
JPH01319529A (ja) * 1988-06-20 1989-12-25 Denki Kagaku Kogyo Kk エポキシ樹脂組成物
JP2987180B2 (ja) * 1990-08-29 1999-12-06 東レ・ダウコーニング・シリコーン株式会社 硬化性エポキシ樹脂組成物
JP3012358B2 (ja) * 1991-04-30 2000-02-21 東レ・ダウコーニング・シリコーン株式会社 加熱硬化性エポキシ樹脂組成物
JPH0669379A (ja) * 1991-05-13 1994-03-11 Nitto Denko Corp 半導体装置
JP2000044774A (ja) * 1998-07-28 2000-02-15 Toray Ind Inc 半導体封止用エポキシ樹脂組成物および半導体装置
US6610406B2 (en) * 2000-03-23 2003-08-26 Henkel Locktite Corporation Flame retardant molding compositions
JP4411760B2 (ja) * 2000-09-06 2010-02-10 住友ベークライト株式会社 エポキシ樹脂組成物及び半導体装置
JP4770024B2 (ja) * 2001-01-17 2011-09-07 住友ベークライト株式会社 エポキシ樹脂組成物及び半導体装置
JP2003105057A (ja) * 2001-09-28 2003-04-09 Toray Ind Inc エポキシ樹脂組成物及び半導体装置
JP2003252960A (ja) * 2002-03-05 2003-09-10 Toray Ind Inc エポキシ樹脂組成物及びそれを用いた樹脂封止型半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000103938A (ja) * 1998-09-25 2000-04-11 Matsushita Electric Works Ltd 封止用のエポキシ樹脂組成物および半導体装置
JP2002220434A (ja) * 2001-01-26 2002-08-09 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置

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