JP5332900B2 - 半導体封止用エポキシ樹脂組成物及び半導体装置 - Google Patents
半導体封止用エポキシ樹脂組成物及び半導体装置 Download PDFInfo
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- JP5332900B2 JP5332900B2 JP2009123794A JP2009123794A JP5332900B2 JP 5332900 B2 JP5332900 B2 JP 5332900B2 JP 2009123794 A JP2009123794 A JP 2009123794A JP 2009123794 A JP2009123794 A JP 2009123794A JP 5332900 B2 JP5332900 B2 JP 5332900B2
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- epoxy resin
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- acid ester
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- organopolysiloxane
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- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical group O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
また、連続成形性向上への取り組みとしては、離型効果の高い離型剤の適用が提案されているが、離型効果の高い離型剤は必然的に樹脂硬化物の表面に浮き出しやすく、連続生産すると樹脂硬化物表面の外観及び金型表面を著しく汚してしまう欠点があった。また樹脂硬化物表面の外観に優れるエポキシ樹脂組成物として、特定の構造を有するシリコーン化合物を添加する手法等が提案されている(例えば、特許文献3、4参照。)が、離型性は不充分で連続成形においてエアベント部分で樹脂が付着してエアベントを塞ぐことにより、未充填等の成形不具合を生じさせる等、連続成形性の低下を引き起こす問題があった。以上より、半田リフロー性、離型性、連続成形性、樹脂硬化物表面の外観、金型汚れ全ての課題に対応した半導体封止用エポキシ樹脂組成物が求められている。
(A)第1のエポキシ樹脂、(B)フェノール樹脂系硬化剤、(C)ポリカプロラクトン基を有するオルガノポリシロキサン(c1)、及び/又は、ポリカプロラクトン基を有するオルガノポリシロキサン(c1)と第2のエポキシ樹脂との反応生成物(c2)、並びに(D)ペンタエリスリトールテトラ脂肪酸エステル(d1)及び/又はジペンタエリスリトールヘキサ脂肪酸エステル(d2)を含むことを特徴とする。
また、本発明に用いられる(C)ポリカプロラクトン基を有するオルガノポリシロキサン(c1)、及び/又は、ポリカプロラクトン基を有するオルガノポリシロキサン(c1)と第2のエポキシ樹脂との反応生成物(c2)を添加する効果を損なわない範囲で、他のオルガノポリシロキサンを併用することができる。
本発明の半導体装置の形態としては、例えば、デュアル・インライン・パッケージ(DIP)、プラスチック・リード付きチップ・キャリヤ(PLCC)、クワッド・フラット・パッケージ(QFP)、スモール・アウトライン・パッケージ(SOP)、スモール・アウトライン・Jリード・パッケージ(SOJ)、薄型スモール・アウトライン・パッケージ(TSOP)、薄型クワッド・フラット・パッケージ(TQFP)、テープ・キャリア・パッケージ(TCP)、ボール・グリッド・アレイ(BGA)、チップ・サイズ・パッケージ(CSP)等が挙げられる。
エポキシ樹脂1:下記一般式(2)で表される構造を有するエポキシ樹脂であるビフェニレン骨格を有するフェノールアラルキル型エポキシ樹脂(但し、下記一般式(2)において、m2/n2の平均値:1、Ar1=ビフェニル基、Ar2=フェニル基、R6=水素、R7=水素、b=0、c=0、d=0、e=1。日本化薬(株)製、NC−3000P。エポキシ当量275、軟化点60℃。) 8.64重量部
スパイラルフロー:低圧トランスファー成形機(コータキ精機(株)製、KTS−15)を用いて、EMMI−1−66に準じたスパイラルフロー測定用金型に、金型温度175℃、注入圧力6.9MPa、硬化時間120秒の条件でエポキシ樹脂組成物を注入し、流動長を測定した。単位はcm。判定基準は70cm未満を不合格、70cm以上を合格とした。
表1及び2の配合に従い、実施例1と同様にしてエポキシ樹脂組成物を得て、実施例1と同様にして評価した。結果を表1及び2に示す。
エポキシ樹脂2:下記一般式(2)で表される構造を有するエポキシ樹脂(但し、下記一般式(2)において、m2/n2の平均値:1/4、Ar1=ナフタレン基、Ar2=フェニル基、R5=メチル基、R6=水素、R7=水素、R8=メチル基、W1=酸素、b=0、c=1、d=1、e=1。大日本インキ化学(株)製、EXA−7320。エポキシ当量251、融点58℃。)
離型剤6:カルナバワックス
2 ダイボンド材硬化体
3 ダイパッド
4 金線
5 リードフレーム
6 半導体封止用エポキシ樹脂組成物の硬化体
Claims (7)
- (A)第1のエポキシ樹脂、
(B)フェノール樹脂系硬化剤、
(C)ポリカプロラクトン基を有するオルガノポリシロキサン(c1)、及び/又は、ポリカプロラクトン基を有するオルガノポリシロキサン(c1)と第2のエポキシ樹脂との反応生成物(c2)、
並びに
(D)ペンタエリスリトールテトラ脂肪酸エステル(d1)及び/又はジペンタエリスリトールヘキサ脂肪酸エステル(d2)、
を含むことを特徴とする半導体封止用エポキシ樹脂組成物であり、
前記化合物(D)の滴点が、60〜100℃であり、
前記化合物(D)の酸価が、10〜50mgKOH/gであり、
前記化合物(D)の配合量が半導体封止用エポキシ樹脂組成物中に0.01〜1重量%
であることを特徴とする半導体封止用エポキシ樹脂組成物。 - 前記ポリカプロラクトン基を有するオルガノポリシロキサン(c1)が下記一般式(1)で表されるオルガノポリシロキサンである請求項1に記載の半導体封止用エポキシ樹脂組成物。
(ただし、上記一般式(1)において、R1は水素、メチル基、フェニル基、又はR2から選ばれる基であり、互いに同一であっても異なっていてもよいが、少なくとも1つ以上がR2で表されるポリカプロラクトン基を有する有機基である。n1の平均値は1以上、50以下の正数である。上記R2において、aの平均値は1以上、20以下の正数であり、R3は炭素数1〜30の有機基である。) - 前記(D)ペンタエリスリトールテトラ脂肪酸エステル(d1)及び/又はジペンタエリスリトールヘキサ脂肪酸エステル(d2)の滴点が60℃以上、100℃以下である請求項1又は請求項2に記載の半導体封止用エポキシ樹脂組成物。
- 前記(D)ペンタエリスリトールテトラ脂肪酸エステル(d1)及び/又はジペンタエリスリトールヘキサ脂肪酸エステル(d2)の酸価が10mgKOH/g以上、50mgKOH/g以下である請求項1ないし請求項3のいずれかに記載の半導体封止用エポキシ樹脂組成物。
- 前記ポリカプロラクトン基を有するオルガノポリシロキサン(c1)と前記ペンタエリスリトールテトラ脂肪酸エステル(d1)及び前記ジペンタエリスリトールヘキサ脂肪酸エステル(d2)の合計量との重量比W(c1)/(W(d1)+W(d2))が3/1から1/5までの範囲である請求項1ないし請求項4のいずれかに記載の半導体封止用エポキシ樹脂組成物。
- 前記(A)第1のエポキシ樹脂が下記一般式(2)で表されるエポキシ樹脂(a1)を含む請求項1ないし請求項5のいずれかに記載の半導体封止用エポキシ樹脂組成物。
(ただし、上記一般式(2)において、Ar1、Ar2は炭素数6〜20の芳香族基であり、互いに同じであっても異なっていてもよい。R4、R5は炭素数1〜6の炭化水素基であり、互いに同じであっても異なっていてもよい。R6、R7は水素、炭素数1〜4の炭化水素基又は炭素数6〜20の芳香族基であり、互いに同じであっても異なっていてもよい。R8は炭素数1〜4の炭化水素基で、W1は酸素原子又は硫黄原子である。OGはグリシドキシ基である。b、cは0〜10の整数、dは0〜3の整数、eは1〜3の整数である。m2は0〜20の整数であり、n2は1〜20の整数であり、かつm2/n2の平均は1/10〜1/1である。m2個の繰り返し単位とn2個の繰り返し単位は、それぞれが連続で並んでいても、お互いが交互もしくはランダムに並んでいてもよいが、それぞれの間には必ず−CR6R7−を有する構造をとる。) - 請求項1ないし請求項6のいずれかに記載の半導体封止用エポキシ樹脂組成物を用いて素子を封止してなることを特徴とする半導体装置。
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