JP5332899B2 - 半導体封止用エポキシ樹脂組成物及び半導体装置 - Google Patents
半導体封止用エポキシ樹脂組成物及び半導体装置 Download PDFInfo
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- JP5332899B2 JP5332899B2 JP2009123668A JP2009123668A JP5332899B2 JP 5332899 B2 JP5332899 B2 JP 5332899B2 JP 2009123668 A JP2009123668 A JP 2009123668A JP 2009123668 A JP2009123668 A JP 2009123668A JP 5332899 B2 JP5332899 B2 JP 5332899B2
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- trimethylolpropane
- epoxy resin
- acid
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- resin composition
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- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 150
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 149
- 239000000203 mixture Substances 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000005538 encapsulation Methods 0.000 title claims description 24
- 150000002148 esters Chemical class 0.000 claims abstract description 106
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 claims abstract description 99
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims abstract description 80
- 239000002253 acid Substances 0.000 claims abstract description 67
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 59
- 239000000194 fatty acid Substances 0.000 claims abstract description 47
- 229920001610 polycaprolactone Polymers 0.000 claims abstract description 47
- 239000004632 polycaprolactone Substances 0.000 claims abstract description 47
- 235000014113 dietary fatty acids Nutrition 0.000 claims abstract description 46
- 229930195729 fatty acid Natural products 0.000 claims abstract description 46
- 150000004665 fatty acids Chemical class 0.000 claims abstract description 44
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 28
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 239000005011 phenolic resin Substances 0.000 claims abstract description 18
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 17
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 3
- -1 glycidoxy group Chemical group 0.000 claims description 98
- 125000004432 carbon atom Chemical group C* 0.000 claims description 27
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 25
- 239000001257 hydrogen Substances 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 21
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- 125000000962 organic group Chemical group 0.000 claims description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 238000013329 compounding Methods 0.000 claims description 6
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 125000004434 sulfur atom Chemical group 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 3
- 229920005989 resin Polymers 0.000 abstract description 52
- 239000011347 resin Substances 0.000 abstract description 52
- 229910000679 solder Inorganic materials 0.000 abstract description 27
- 238000000465 moulding Methods 0.000 abstract description 17
- 239000000047 product Substances 0.000 abstract description 14
- 238000011109 contamination Methods 0.000 abstract description 10
- 229940113165 trimethylolpropane Drugs 0.000 description 88
- 238000002156 mixing Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 15
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 12
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000011256 inorganic filler Substances 0.000 description 9
- 229910003475 inorganic filler Inorganic materials 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 8
- 125000003700 epoxy group Chemical group 0.000 description 8
- 229920003986 novolac Polymers 0.000 description 8
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- 239000011342 resin composition Substances 0.000 description 7
- 150000004671 saturated fatty acids Chemical class 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 150000002430 hydrocarbons Chemical group 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000007822 coupling agent Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 125000001624 naphthyl group Chemical group 0.000 description 5
- NQMUGNMMFTYOHK-UHFFFAOYSA-N 1-methoxynaphthalene Chemical compound C1=CC=C2C(OC)=CC=CC2=C1 NQMUGNMMFTYOHK-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000006082 mold release agent Substances 0.000 description 4
- 235000013872 montan acid ester Nutrition 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- FEJVSENCSYDQIT-UHFFFAOYSA-N decanedioic acid 2-ethyl-2-(hydroxymethyl)propane-1,3-diol Chemical compound C(O)C(CC)(CO)CO.C(CCCCCCCCC(=O)O)(=O)O FEJVSENCSYDQIT-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- 239000001993 wax Substances 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 2
- KNULFODMSJPBJT-UHFFFAOYSA-N C(CC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CC(=O)O)(=O)O.C(O)C(CC)(CO)CO KNULFODMSJPBJT-UHFFFAOYSA-N 0.000 description 2
- UOCKMQSPZRTCMX-UHFFFAOYSA-N C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO UOCKMQSPZRTCMX-UHFFFAOYSA-N 0.000 description 2
- SOHJIWFUOQFWMX-UHFFFAOYSA-N C(CCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO SOHJIWFUOQFWMX-UHFFFAOYSA-N 0.000 description 2
- YPWLDKAQAUPGLD-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(O)C(CC)(CO)CO YPWLDKAQAUPGLD-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 239000001361 adipic acid Substances 0.000 description 2
- 235000011037 adipic acid Nutrition 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- KQVMFSLMVJQXKC-UHFFFAOYSA-N butanedioic acid;2-ethyl-2-(hydroxymethyl)propane-1,3-diol Chemical compound OC(=O)CCC(O)=O.CCC(CO)(CO)CO KQVMFSLMVJQXKC-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 239000004203 carnauba wax Substances 0.000 description 2
- 235000013869 carnauba wax Nutrition 0.000 description 2
- 125000003450 decanoic acid ester group Chemical group 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- LFIRBDQBXLXQHY-UHFFFAOYSA-N docosanoic acid;2-ethyl-2-(hydroxymethyl)propane-1,3-diol Chemical compound CCC(CO)(CO)CO.CCCCCCCCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCCCCCC(O)=O LFIRBDQBXLXQHY-UHFFFAOYSA-N 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 210000002445 nipple Anatomy 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000005691 triesters Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QQGBDFMKLXCNHD-UHFFFAOYSA-N 2,2-bis(decanoyloxymethyl)butyl decanoate Chemical compound CCCCCCCCCC(=O)OCC(CC)(COC(=O)CCCCCCCCC)COC(=O)CCCCCCCCC QQGBDFMKLXCNHD-UHFFFAOYSA-N 0.000 description 1
- MKWRZFHGNFBSQU-UHFFFAOYSA-N 2,2-bis(hexanoyloxymethyl)butyl hexanoate Chemical compound CCCCCC(=O)OCC(CC)(COC(=O)CCCCC)COC(=O)CCCCC MKWRZFHGNFBSQU-UHFFFAOYSA-N 0.000 description 1
- WZUNUACWCJJERC-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)butyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(CC)(CO)CO WZUNUACWCJJERC-UHFFFAOYSA-N 0.000 description 1
- PDDAEITXZXSQGZ-UHFFFAOYSA-N 2,2-bis(octadecanoyloxymethyl)butyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(CC)(COC(=O)CCCCCCCCCCCCCCCCC)COC(=O)CCCCCCCCCCCCCCCCC PDDAEITXZXSQGZ-UHFFFAOYSA-N 0.000 description 1
- HFWHTGSLDKKCMD-UHFFFAOYSA-N 2,2-bis(octanoyloxymethyl)butyl octanoate Chemical compound CCCCCCCC(=O)OCC(CC)(COC(=O)CCCCCCC)COC(=O)CCCCCCC HFWHTGSLDKKCMD-UHFFFAOYSA-N 0.000 description 1
- OSBNQQXXUPNGNT-UHFFFAOYSA-N 2,2-bis(tetradecanoyloxymethyl)butyl tetradecanoate Chemical compound CCCCCCCCCCCCCC(=O)OCC(CC)(COC(=O)CCCCCCCCCCCCC)COC(=O)CCCCCCCCCCCCC OSBNQQXXUPNGNT-UHFFFAOYSA-N 0.000 description 1
- VPUPTBGJLAVERZ-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol hexadecanoic acid Chemical compound CCC(CO)(CO)CO.CCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCC(O)=O VPUPTBGJLAVERZ-UHFFFAOYSA-N 0.000 description 1
- OKHXVHLULYUTCR-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;hexanedioic acid Chemical compound CCC(CO)(CO)CO.OC(=O)CCCCC(O)=O OKHXVHLULYUTCR-UHFFFAOYSA-N 0.000 description 1
- KZWMREBOHGUJTO-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;pentanedioic acid Chemical compound CCC(CO)(CO)CO.OC(=O)CCCC(O)=O KZWMREBOHGUJTO-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- OTFTYRFEJYWORP-UHFFFAOYSA-N C(CCCCCCC)(=O)O.C(CC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCC)(=O)O.C(CC(=O)O)(=O)O.C(O)C(CC)(CO)CO OTFTYRFEJYWORP-UHFFFAOYSA-N 0.000 description 1
- ZYMFQBCRYJBZHU-UHFFFAOYSA-N C(CCCCCCC)(=O)O.C(CCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCC)(=O)O.C(CCC(=O)O)(=O)O.C(O)C(CC)(CO)CO ZYMFQBCRYJBZHU-UHFFFAOYSA-N 0.000 description 1
- OGEVWTWQCHQGQQ-UHFFFAOYSA-N C(CCCCCCC)(=O)O.C(CCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCC)(=O)O.C(CCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO OGEVWTWQCHQGQQ-UHFFFAOYSA-N 0.000 description 1
- LGGQOHLRQKPEBQ-UHFFFAOYSA-N C(CCCCCCC)(=O)O.C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCC)(=O)O.C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO LGGQOHLRQKPEBQ-UHFFFAOYSA-N 0.000 description 1
- YWHRQNFTPAEECY-UHFFFAOYSA-N C(CCCCCCC)(=O)O.C(CCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCC)(=O)O.C(CCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO YWHRQNFTPAEECY-UHFFFAOYSA-N 0.000 description 1
- XGKHNABZYMRGHM-UHFFFAOYSA-N C(CCCCCCC)(=O)O.C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCC)(=O)O.C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO XGKHNABZYMRGHM-UHFFFAOYSA-N 0.000 description 1
- HQYJEASCTIJOPR-UHFFFAOYSA-N C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO HQYJEASCTIJOPR-UHFFFAOYSA-N 0.000 description 1
- SEKQURYCZYWGST-UHFFFAOYSA-N C(CCCCCCCCCCC)(=O)O.C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical class C(CCCCCCCCCCC)(=O)O.C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO SEKQURYCZYWGST-UHFFFAOYSA-N 0.000 description 1
- PDKPOAIVOBOMHL-UHFFFAOYSA-N C(CCCCCCCCCCC)(=O)O.C(CCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCC)(=O)O.C(CCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO PDKPOAIVOBOMHL-UHFFFAOYSA-N 0.000 description 1
- OFEQNAZXDFEUFL-UHFFFAOYSA-N C(CCCCCCCCCCC)(=O)O.C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCC)(=O)O.C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO OFEQNAZXDFEUFL-UHFFFAOYSA-N 0.000 description 1
- SIDAYZACFLYDOA-UHFFFAOYSA-N C(CCCCCCCCCCC)(=O)O.C(CCCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCC)(=O)O.C(CCCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO SIDAYZACFLYDOA-UHFFFAOYSA-N 0.000 description 1
- CPPDTHUOJCRSCB-UHFFFAOYSA-N C(CCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO CPPDTHUOJCRSCB-UHFFFAOYSA-N 0.000 description 1
- BMIMAAFHHRQZKH-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCC(=O)O)(=O)O.C(O)C(CC)(CO)CO BMIMAAFHHRQZKH-UHFFFAOYSA-N 0.000 description 1
- CTXONFLFWQRANZ-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO CTXONFLFWQRANZ-UHFFFAOYSA-N 0.000 description 1
- KDRZYCBTNICRKU-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO KDRZYCBTNICRKU-UHFFFAOYSA-N 0.000 description 1
- FOBVSIPPHHURCA-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO FOBVSIPPHHURCA-UHFFFAOYSA-N 0.000 description 1
- TVROUUDXFAITHE-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical class C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO TVROUUDXFAITHE-UHFFFAOYSA-N 0.000 description 1
- CFLYHJCFDHUCKN-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO CFLYHJCFDHUCKN-UHFFFAOYSA-N 0.000 description 1
- RDOISHUSOALAJW-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO RDOISHUSOALAJW-UHFFFAOYSA-N 0.000 description 1
- UPEGCERYRNSLPF-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO UPEGCERYRNSLPF-UHFFFAOYSA-N 0.000 description 1
- RYJSPTCOWFUQET-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO RYJSPTCOWFUQET-UHFFFAOYSA-N 0.000 description 1
- KOGRKBXNGLYVOZ-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO KOGRKBXNGLYVOZ-UHFFFAOYSA-N 0.000 description 1
- KKVXEQSQXSCMEG-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO KKVXEQSQXSCMEG-UHFFFAOYSA-N 0.000 description 1
- PQBMUDRGSWQGPI-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO PQBMUDRGSWQGPI-UHFFFAOYSA-N 0.000 description 1
- APMNUARYZSSLLC-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO APMNUARYZSSLLC-UHFFFAOYSA-N 0.000 description 1
- YCPDLURGIYHMLA-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CC(=O)O)(=O)O.C(O)C(CC)(CO)CO YCPDLURGIYHMLA-UHFFFAOYSA-N 0.000 description 1
- XLCARRWYCOGIKM-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCC(=O)O)(=O)O.C(O)C(CC)(CO)CO XLCARRWYCOGIKM-UHFFFAOYSA-N 0.000 description 1
- YMWDWQSLHQJWSR-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO YMWDWQSLHQJWSR-UHFFFAOYSA-N 0.000 description 1
- DLOFPXBNEAVQLH-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound C(CCCCCCCCCCCCCCCCCCCCCCCCCCC)(=O)O.C(CCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO DLOFPXBNEAVQLH-UHFFFAOYSA-N 0.000 description 1
- 235000010919 Copernicia prunifera Nutrition 0.000 description 1
- 244000180278 Copernicia prunifera Species 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- 235000021353 Lignoceric acid Nutrition 0.000 description 1
- CQXMAMUUWHYSIY-UHFFFAOYSA-N Lignoceric acid Natural products CCCCCCCCCCCCCCCCCCCCCCCC(=O)OCCC1=CC=C(O)C=C1 CQXMAMUUWHYSIY-UHFFFAOYSA-N 0.000 description 1
- SPONLBCJYFPRJR-UHFFFAOYSA-N O=C(OCC(OC(=O)CCCCCCCCCCC)COC(=O)CCCCCCCCCCC)CCCCCCCCCCC.C(O)C(CC)(CO)CO Chemical compound O=C(OCC(OC(=O)CCCCCCCCCCC)COC(=O)CCCCCCCCCCC)CCCCCCCCCCC.C(O)C(CC)(CO)CO SPONLBCJYFPRJR-UHFFFAOYSA-N 0.000 description 1
- FMKTXENIPJEGEH-UHFFFAOYSA-N OC(=O)CCCCCCCCC.C(CCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound OC(=O)CCCCCCCCC.C(CCC(=O)O)(=O)O.C(O)C(CC)(CO)CO FMKTXENIPJEGEH-UHFFFAOYSA-N 0.000 description 1
- MYUAYSIUFNRCJW-UHFFFAOYSA-N OC(=O)CCCCCCCCC.C(CCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound OC(=O)CCCCCCCCC.C(CCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO MYUAYSIUFNRCJW-UHFFFAOYSA-N 0.000 description 1
- QTQSBCUBDLHRLL-UHFFFAOYSA-N OC(=O)CCCCCCCCC.C(CCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound OC(=O)CCCCCCCCC.C(CCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO QTQSBCUBDLHRLL-UHFFFAOYSA-N 0.000 description 1
- BCZYNQKLSZUCJY-UHFFFAOYSA-N OC(=O)CCCCCCCCC.C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound OC(=O)CCCCCCCCC.C(CCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO BCZYNQKLSZUCJY-UHFFFAOYSA-N 0.000 description 1
- ORHBKEIYRZQWGG-UHFFFAOYSA-N OC(=O)CCCCCCCCC.C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO Chemical compound OC(=O)CCCCCCCCC.C(CCCCCCCC(=O)O)(=O)O.C(O)C(CC)(CO)CO ORHBKEIYRZQWGG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- GHVNFZFCNZKVNT-UHFFFAOYSA-M decanoate Chemical compound CCCCCCCCCC([O-])=O GHVNFZFCNZKVNT-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000006266 etherification reaction Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 235000021588 free fatty acids Nutrition 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 150000002400 hexanoic acid esters Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- VHOCUJPBKOZGJD-UHFFFAOYSA-N n-triacontanoic acid Natural products CCCCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O VHOCUJPBKOZGJD-UHFFFAOYSA-N 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 239000010680 novolac-type phenolic resin Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-O phenylphosphanium Chemical compound [PH3+]C1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-O 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 125000004001 thioalkyl group Chemical group 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical group O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
また、連続成形性向上への取り組みとしては、離型効果の高い離型剤の適用が提案されているが、離型効果の高い離型剤は必然的に樹脂硬化物の表面に浮き出しやすく、連続生産すると樹脂硬化物表面の外観及び金型表面を著しく汚してしまう欠点があった。また樹脂硬化物表面の外観に優れるエポキシ樹脂組成物として、特定の構造を有するシリコーン化合物を添加する手法等が提案されている(例えば、特許文献3、4参照。)が、離型性は不充分で連続成形においてエアベント部分で樹脂が付着してエアベントを塞ぐことにより、未充填等の成形不具合を生じさせる等、連続成形性の低下を引き起こす問題があった。以上より、半田リフロー性、離型性、連続成形性、樹脂硬化物表面の外観、金型汚れ全ての課題に対応した半導体封止用エポキシ樹脂組成物が求められている。
(A)第1のエポキシ樹脂、(B)フェノール樹脂系硬化剤、(C)ポリカプロラクトン基を有するオルガノポリシロキサン(c1)、及び/又は、ポリカプロラクトン基を有するオルガノポリシロキサン(c1)と第2のエポキシ樹脂との反応生成物(c2)、並びに(D)トリメチロールプロパントリ脂肪酸エステル(d1)及び/又はトリメチロールプロパンと脂肪酸とジカルボン酸の複合フルエステル(d2)を含むことを特徴とする。
また、本発明に用いられる(C)ポリカプロラクトン基を有するオルガノポリシロキサン(c1)、及び/又は、ポリカプロラクトン基を有するオルガノポリシロキサン(c1)と第2のエポキシ樹脂との反応生成物(c2)を添加する効果を損なわない範囲で、他のオルガノポリシロキサンを併用することができる。
本発明の半導体装置の形態としては、例えば、デュアル・インライン・パッケージ(DIP)、プラスチック・リード付きチップ・キャリヤ(PLCC)、クワッド・フラット・パッケージ(QFP)、スモール・アウトライン・パッケージ(SOP)、スモール・アウトライン・Jリード・パッケージ(SOJ)、薄型スモール・アウトライン・パッケージ(TSOP)、薄型クワッド・フラット・パッケージ(TQFP)、テープ・キャリア・パッケージ(TCP)、ボール・グリッド・アレイ(BGA)、チップ・サイズ・パッケージ(CSP)等が挙げられる。
エポキシ樹脂1:下記一般式(3)で表される構造を有するエポキシ樹脂であるビフェニレン骨格を有するフェノールアラルキル型エポキシ樹脂(但し、下記一般式(3)において、m3/n3の平均値:1、Ar1=ビフェニル基、Ar2=フェニル基、R7=水素、R8=水素、b=0、c=0、d=0、e=1。日本化薬(株)製、NC−3000P。エポキシ当量275、軟化点60℃。) 8.64重量部
スパイラルフロー:低圧トランスファー成形機(コータキ精機(株)製、KTS−15)を用いて、EMMI−1−66に準じたスパイラルフロー測定用金型に、金型温度175℃、注入圧力6.9MPa、硬化時間120秒の条件でエポキシ樹脂組成物を注入し、流動長を測定した。単位はcm。判定基準は70cm未満を不合格、70cm以上を合格とした。
表1及び2の配合に従い、実施例1と同様にしてエポキシ樹脂組成物を得て、実施例1と同様にして評価した。結果を表1及び2に示す。
エポキシ樹脂2:下記一般式(3)で表される構造を有するエポキシ樹脂(但し、下記一般式(3)において、m3/n3の平均値:1/4、Ar1=ナフタレン基、Ar2=フェニル基、R6=メチル基、R7=水素、R8=水素、R9=メチル基、W1=酸素、b=0、c=1、d=1、e=1。大日本インキ化学(株)製、EXA−7320。エポキシ当量251、融点58℃。)
離型剤6:トリメチロールプロパンモノモンタン酸エステル(前述の方法により作成したもの。滴点73℃、酸価2mgKOH/g。)
離型剤7:カルナバワックス(日興ファインプロダクツ(株)製、商品名ニッコウカルナバ。滴点83℃、酸価5mgKOH/g。)
実施例1〜13は、(C)ポリカプロラクトン基を有するオルガノポリシロキサン(c1)、及び/又は、ポリカプロラクトン基を有するオルガノポリシロキサン(c1)と第2のエポキシ樹脂との反応生成物(c2)、並びに(D)トリメチロールプロパントリ脂肪酸エステル(d1)及び/又はトリメチロールプロパンと脂肪酸とジカルボン酸の複合フルエステル(d2)を含むとともに、(C)成分の配合量や種類を変えたもの、(D)成分の配合量や種類を変えたもの、或いは、エポキシ樹脂の種類や無機充填材の配合量を変えたものであるが、いずれにおいても、流動性(スパイラルフロー)、連続成形性、パッケージ外観及び金型汚れ性、半田リフロー性のバランスに優れた結果が得られた。
本発明に従うと、流動性に優れるとともに、連続成形性、半田リフロー性、素子の封止成形時における離型性、樹脂硬化物表面の外観、金型汚れ性とのバランスに優れたエポキシ樹脂組成物を得ることができるため、半導体装置封止用として好適である。
1 半導体素子
2 ダイボンド材硬化体
3 ダイパッド
4 金線
5 リードフレーム
6 半導体封止用エポキシ樹脂組成物の硬化体
Claims (8)
- (A)第1のエポキシ樹脂、
(B)フェノール樹脂系硬化剤、
(C)ポリカプロラクトン基を有するオルガノポリシロキサン(c1)、及び/又は、ポリカプロラクトン基を有するオルガノポリシロキサン(c1)と第2のエポキシ樹脂との反応生成物(c2)、
並びに
(D)トリメチロールプロパントリ脂肪酸エステル(d1)及び/又はトリメチロールプロパンと脂肪酸とジカルボン酸の複合フルエステル(d2)、
を含み、
前記化合物(D)の滴点は、60〜100℃であり、
前記化合物(D)の酸価は、10〜50mgKOH/gであり、
前記化合物(D)の配合量は、ポキシ樹脂組成物中に、0.01〜1重量%である
ことを特徴とする半導体封止用エポキシ樹脂組成物。 - 前記ポリカプロラクトン基を有するオルガノポリシロキサン(c1)が下記一般式(1)で表されるオルガノポリシロキサンである請求項1に記載の半導体封止用エポキシ樹脂組成物。
(ただし、上記一般式(1)において、R1は水素、メチル基、フェニル基、又はR2から選ばれる基であり、互いに同一であっても異なっていてもよいが、少なくとも1つ以上
がR2で表されるポリカプロラクトン基を有する有機基である。n1の平均値は1以上、50以下の正数である。上記R2において、aの平均値は1以上、20以下の正数であり、R3は炭素数1〜30の有機基である。) - 前記(D)トリメチロールプロパントリ脂肪酸エステル(d1)及び/又はトリメチロールプロパンと脂肪酸とジカルボン酸の複合フルエステル(d2)の滴点が60℃以上、100℃以下である請求項1又は請求項2に記載の半導体封止用エポキシ樹脂組成物。
- 前記(D)トリメチロールプロパントリ脂肪酸エステル(d1)及び/又はトリメチロールプロパンと脂肪酸とジカルボン酸の複合フルエステル(d2)の酸価が10mgKOH/g以上、50mgKOH/g以下である請求項1ないし請求項3のいずれかに記載の半導体封止用エポキシ樹脂組成物。
- 前記トリメチロールプロパンと脂肪酸とジカルボン酸の複合フルエステル(d2)が下記一般式(2)で表される化合物である請求項1ないし請求項4のいずれかに記載の半導体封止用エポキシ樹脂組成物。
(ただし、上記一般式(2)において、R4は炭素数21以上、35以下の炭化水素基であり、それらは互いに同じであっても異なっていても良い。n2は1以上、8以下の整数、m2の平均値は0又は5以下の正数である。) - 前記ポリカプロラクトン基を有するオルガノポリシロキサン(c1)と前記トリメチロールプロパントリ脂肪酸エステル(d1)及び前記トリメチロールプロパンと脂肪酸とジカルボン酸の複合フルエステル(d2)の合計量との重量比W(c1)/(W(d1)+W(d2))が3/1から1/5までの範囲である請求項1ないし請求項5のいずれかに記載の半導体封止用エポキシ樹脂組成物。
- 前記(A)第1のエポキシ樹脂が下記一般式(3)で表されるエポキシ樹脂(a1)を含む請求項1ないし請求項6のいずれかに記載の半導体封止用エポキシ樹脂組成物。
(ただし、上記一般式(3)において、Ar1、Ar2は炭素数6〜20の芳香族基であり、互いに同じであっても異なっていてもよい。R5、R6は炭素数1〜6の炭化水素基であり、互いに同じであっても異なっていてもよい。R7、R8は水素、炭素数1〜4の炭化水素基又は炭素数6〜20の芳香族基であり、互いに同じであっても異なっていても
よい。R9は炭素数1〜4の炭化水素基で、W1は酸素原子又は硫黄原子である。OGはグリシドキシ基である。b、cは0〜10の整数、dは0〜3の整数、eは1〜3の整数である。m3は0〜20の整数であり、n3は1〜20の整数であり、かつm3/n3の平均は1/10〜1/1である。m3個の繰り返し単位とn3個の繰り返し単位は、それぞれが連続で並んでいても、お互いが交互もしくはランダムに並んでいてもよいが、それぞれの間には必ず−CR7R8−を有する構造をとる。) - 請求項1ないし請求項7のいずれかに記載の半導体封止用エポキシ樹脂組成物を用いて素子を封止してなることを特徴とする半導体装置。
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