CN1934156A - 环氧树脂组合物及半导体装置 - Google Patents
环氧树脂组合物及半导体装置 Download PDFInfo
- Publication number
- CN1934156A CN1934156A CNA2005800084595A CN200580008459A CN1934156A CN 1934156 A CN1934156 A CN 1934156A CN A2005800084595 A CNA2005800084595 A CN A2005800084595A CN 200580008459 A CN200580008459 A CN 200580008459A CN 1934156 A CN1934156 A CN 1934156A
- Authority
- CN
- China
- Prior art keywords
- epoxy resin
- organopolysiloxane
- resin composition
- carboxyl
- epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/10—Esters; Ether-esters
- C08K5/101—Esters; Ether-esters of monocarboxylic acids
- C08K5/103—Esters; Ether-esters of monocarboxylic acids with polyalcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
本发明的目的是提供一种焊锡耐热性良好,且生产效率优良的半导体密封用环氧树脂组合物及半导体装置。本发明通过采用含有(A)环氧树脂、(B)酚醛树脂、(C)(C-1)具有羧基的有机聚硅氧烷及/或(C-2)具有羧基的有机聚硅氧烷与环氧树脂的反应产物、以及(D)丙三醇三脂肪酸酯的半导体密封用环氧树脂组合物,达到上述目的。
Description
技术领域
本发明涉及半导体密封用环氧树脂组合物及半导体装置。
背景技术
近几年来,在电子设备的小型化、轻质化、高性能化的市场动向中,半导体的高集成化在逐年不断发展,并且,促进了半导体组件的表面安装技术的发展。另外,企业活动对地球环境的影响也受到重视,作为有害物质的铅,要求在2006年前除特定用途之外要求全部废除。由于无铅焊锡的熔点比原来的铅/锡焊锡高,所以,红外线回流、焊锡浸渍等焊锡安装时的温度,今后也从以往的220~240℃升高到240~260℃。由于该安装温度的上升,安装时在半导体装置的树脂部产生裂纹,产生不能保证半导体装置的可靠性的问题。进一步,对于引线框架,从无铅的观点看,代替外装焊锡电镀,向适用事先实施了镀镍·钯的引线框架的方向发展。由于镍·钯电镀与环氧树脂组合物的粘合性低,安装时在界面上产生剥离,树脂部也容易产生裂纹。
针对该课题,可通过采用低吸水性及低弹性系数的环氧树脂组合物或固化剂(例如,参照专利文献1、2、3),来应对安装温度的上升。但另一方面,显示这种低吸水性及低弹性系数的环氧树脂组合物,由于交联密度低,刚固化后的成型制品柔软。其结果是,在连续生产时,树脂粘在模具上等,对成型性产生不良影响,产生生产效率下降的问题。
另外,作为提高生产效率的方法,有人提出采用脱模效果高的脱模剂(例如,参见专利文献4)。然而,脱模效果高的脱模剂必然容易在成型制品表面浮出,当连续生产时,存着在成型制品的外观受到显著污染的缺点。有人提出作为对成型制品外观优良的环氧树脂组合物添加具有特定结构的硅化合物的方法等(例如,参照专利文献5、6)。然而,该环氧树脂组合物因脱模性不充分,在连续成型时,树脂堵塞气孔部分,发生模具中未填充树脂等成型不良的情况等,引起生产效率下降的问题。如上所述,要求一种可以解决焊锡耐热性、脱模型、连续成型性、成型制品外观、模具污染等全部课题的半导体密封用环氧树脂组合物。
专利文献1:特开平9-3161号公报(第2~5页)
专利文献2:特开平9-235353号公报(第2~7页)
专利文献3:特开平11-140277号公报(第2~11页)
专利文献4:特开2002-80695号公报(第2~5页)
专利文献5:特开2002-97344号公报(第2~10页)
专利文献6:特开2001-310930号公报(第2~8页)
发明的公开
发明要解决的问题
本发明是为了解决上述问题点而研制的,其目的是提供一种焊锡耐热性良好,并且,针对脱模型、连续成型性、成型制品外观、模具污染等全部课题的,生产效率优良的半导体密封用环氧树脂组合物及半导体装置。
解决问题的手段
上述目的是通过下述[1]~[7]中记载的本发明来实现的。
[1]一种半导体密封用环氧树脂组合物,其特征在于,将(A)环氧树脂;(B)酚醛树脂;(C)(C-1)具有羧基的有机聚硅氧烷及/或(C-2)具有羧基的有机聚硅氧烷与环氧树脂的反应产物;以及(D)丙三醇三脂肪酸酯作为必要成分。
[2]按照上述第[1]项中所述的半导体密封用环氧树脂组合物,其特征在于,上述(C)中具有羧基的有机聚硅氧烷是以通式(1)表示的有机聚硅氧烷:
(式中,R为有机基,其中至少一个以上的有机基是含有羧基的碳原子数为1~40的有机基,其余的基团为选自氢、苯基或甲基的基团,其相互之间既可以相同也可以相异。n为平均值,且为1~50的正数)。
[3]按照上述第[1]或[2]项中所述的半导体密封用环氧树脂组合物,其特征在于,上述(D)丙三醇三脂肪酸酯为丙三醇与碳原子数为24~36的饱和脂肪酸的三酯。
[4]按照上述第[1]、[2]或[3]项中的任何一项所述的半导体密封用环氧树脂组合物,其特征在于,上述(C)成分与上述(D)成分的重量比(C)/(D)为3/1~1/5。
[5]按照上述第[1]~[4]项中的任何一项所述的半导体密封用环氧树脂组合物,其特征在于,上述(A)环氧树脂为以通式(2)表示的环氧树脂:
(式中,n为平均值,且为1~10的正数)。
[6]按照上述第[1]~[5]项中的任何一项所述的半导体密封用环氧树脂组合物,其特征在于,上述(B)酚醛树脂为以通式(3)表示的酚醛树脂:
(式中,n为平均值,且为1~10的正数)。
[7]一种半导体装置,其特征在于,其采用上述第[1]~[6]项中的任何一项所述的半导体密封用环氧树脂组合物来密封半导体元件而制成的。
发明的效果
按照本发明,可得到一种生产效率优良的半导体密封用环氧树脂组合物及半导体装置,其在半导体装置安装时,显示出优良的焊锡耐热性,同时在半导体元件的密封成型时,可解决作为以往缺陷的脱模性、连续成型性、成型制品外观、模具污染等课题。
附图的简单说明
图1是采用本发明涉及的环氧树脂组合物的半导体装置之一例的剖面结构图。
附图标记说明
101半导体元件
102芯片垫片
103金属线
104引线框架
105密封树脂
106芯片焊接材料固化体
实施发明的最佳方式
本发明通过配合作为必要成分的、具有羧基的有机聚硅氧烷及丙三醇三脂肪酸酯,可以得到在半导体元件密封成型时脱模性、连续成型性、成型制品外观良好,模具污染也难以发生且显示出优良的生产效率的同时在半导体装置安装时的焊锡耐热性优良的半导体密封用环氧树脂组合物。
下面,对本发明加以详细说明。
作为本发明中使用的(A)环氧树脂,意指一分子内具有两个以上环氧基的全部的单体、低聚物、聚合物,对其分子量、分子结构未作特别限定。例如,可以举出联苯基型环氧树脂、双酚型环氧树脂、茋型环氧树脂、苯酚酚醛清漆型环氧树脂、甲酚酚醛清漆型环氧树脂、三酚基甲烷型环氧树脂、烷基改性三酚基甲烷型环氧树脂、含三嗪核的环氧树脂、双环戊二烯改性酚型环氧树脂、苯酚芳烷基型环氧树脂(具有亚苯基骨架、联亚苯基骨架等)、萘酚型环氧树脂等。这些既可以单独使用也可混合使用。
从提高耐焊锡裂纹性考虑,其中,优选为苯酚芳烷基型环氧树脂,更优选为具有联亚苯基骨架等的苯酚芳烷基型环氧树脂,特别优选为以用通式
(2)表示的环氧树脂:
(式中,n为平均值,且为1~10的正数)
作为本发明中使用的(B)酚醛树脂,意指一分子内具有两个以上酚性羟基的全部的单体、低聚物、聚合物,对其分子量、分子结构未作特别限定。例如,可以举出苯酚酚醛清漆树脂、甲酚酚醛清漆树脂、双环戊二烯改性酚醛树脂、萜烯改性酚醛树脂、三酚基甲烷型树脂、苯酚芳烷基树脂(具有亚苯基骨架、联亚苯基骨架等)、萘酚型芳烷基树脂等。这些既可以单独使用也可混合使用。
从提高耐焊锡裂纹性考虑,其中,优选为苯酚芳烷基树脂,更优选为具有联亚苯基骨架等的苯酚芳烷基树脂,特别优选为以通式(3)表示的酚醛树脂。另外,作为酚醛树脂的配合量,优选全部环氧树脂的环氧基数与全部酚醛树脂的酚性羟基数之比为0.8~1.3。
(式中,n为平均值,且为1~10的正数)
本发明中使用的(C)成分,是(C-1)具有羧基的有机聚硅氧烷及/或(C-2)具有羧基的有机聚硅氧烷与环氧树脂的反应产物。
本发明的(C)成分中使用的具有羧基的有机聚硅氧烷,是一分子中具有一个以上的羧基的有机聚硅氧烷,且必须与丙三醇三脂肪酸酯并用。当单独使用具有羧基的有机聚硅氧烷时,脱模性不充分,连续成型性降低。当单独使用丙三醇三脂肪酸酯时,成型制品的外观差。通过并用具有羧基的有机聚硅氧烷与丙三醇三脂肪酸酯,可以使丙三醇三脂肪酸酯相溶化,成型制品的外观与脱模性可达到两全其美,使连续成型良好。本发明的(C)成分与丙三醇三脂肪酸酯(D)的并用配合比例(C)/(D)优选为按重量比3/1~1/5,在该范围内效果最好。
作为(C)成分中使用的具有羧基的有机聚硅氧烷,优选为以通式(1)表示的有机聚硅氧烷。通式(1)中的R为有机基,在全部有机基中,至少一个以上的有机基是含有羧基的碳原子数为1~40的有机基,其余的有机基为选自氢、苯基、或甲基的基团,它们相互既可以相同也可以相异。当具有羧基的有机基的碳原子数超过上限时,与树脂的相溶性差,有恶化成型制品的外观之虑。还有,所谓通式(1)表示的有机聚硅氧烷的具有羧基的有机基的碳原子数,意指有机基中的烃基与羧基的碳原子数的总数。
(式中,R为至少具有一个以上羧基的碳原子数为1~40的有机基,其余的基为选自氢、苯基、或甲基的基团,它们相互既可以相同也可以相异。n为平均值,且为1~50的整数)。
另外,R中,作为具有羧基的碳原子数为1~40的有机基,未作特别限定,只要是具有羧基,在不损害本发明效果的范围内也可具有其他取代基,还可以是羧基本身。作为具有羧基的碳原子数为1~40的有机基,可以举出烃基中的氢被羧基取代的有机基。上述烃基,包括直链状、支链状及环状烃,还包括饱和及不饱和的烃。另外,环状烃包括芳香族烃与脂环式烃。其中,优选为直链状饱和烃基中的氢被羧基取代的烃基。更优选为碳原子数为1~30的直链状饱和烃基中的氢被羧基取代的烃基。
另外,通式(1)中的n为平均值,且为1~50的正数。作为具有羧基的有机聚硅氧烷,优选为油状。当n值超过上限值时,有机聚硅氧烷单体的粘度升高,有流动性恶化之虑。当使用以通式(1)表示的有机聚硅氧烷时,不会引起流动性的降低,成型制品的外观变得特别优良。
作为本发明的(C)成分,也可采用(C-2)具有羧基的有机聚硅氧烷与环氧树脂的反应产物。此时,优选通过环氧树脂与固化促进剂使具有羧基的有机聚硅氧烷进行预熔、反应。当采用此方法时,难以发生连续成型后的模具污染,使连续成型性变得极好。这里所说的固化促进剂,只要能促进羧基与环氧基的固化反应即可,可以采用与能促进下述环氧基与酚性羟基的固化反应的固化促进剂同样的材料。
优选具有羧基的有机聚硅氧烷的配合量为全部环氧树脂组合物中的0.01~3重量%。当低于下限时,效果不充分,有不能抑制由于脱模剂引起的成型制品外观污染之虑,当超过上限时,则存在由于有机聚硅氧烷本身使成型制品外观受污染之虑。
另外,在不损害本发明中使用的具有羧基的有机聚硅氧烷的添加效果的范围内,也可以合用其它的有机聚硅氧烷。
本发明中使用的丙三醇三脂肪酸酯,是从丙三醇与饱和脂肪酸得到的三酯,也可以是三缩水甘油酯,其脱模性非常优良。采用一酯、二酯时,由于残留羟基的影响,环氧树脂的固化物的耐湿性下降,其结果是对焊锡耐热性有不良影响,故为不优选。作为本发明中使用的丙三醇三脂肪酸酯,具体可以举出丙三醇三己酸酯、丙三醇三辛酸酯、丙三醇三癸酸酯、丙三醇三月桂酸酯、丙三醇三肉豆蒄酸酯、丙三醇三棕榈酸酯、丙三醇三硬脂酸酯、丙三醇三花生酸酯、丙三醇三山嵛酸酯、丙三醇三木焦油酸酯、丙三醇三蜡酸酯、丙三醇三褐煤酸酯等。本发明中使用的丙三醇三脂肪酸酯,既可以是一分子中的脂肪酸基为相同的单一甘油酯,也可以是一分子中含两种或三种脂肪酸基的混合甘油酯。另外,也可以将两种以上的丙三醇三脂肪酸酯混合使用。其中,从脱模性与成型制品的外观考虑,优选为与碳原子数为24~36的饱和脂肪酸的丙三醇三脂肪酸酯。还有,所谓本发明中的饱和脂肪酸的碳原子数,意指饱和脂肪酸中的烷基与羧基的碳原子数的总数。
在不损害本发明中使用的对丙三醇与饱和脂肪酸进行酯化而成的丙三醇三脂肪酸酯的添加效果的范围内,也可以并用其他脱模剂。例如,可以举出巴西棕榈蜡(carnauba wax)等天然蜡、聚酯蜡等合成蜡、硬脂酸锌等高级脂肪酸的金属盐类。
另外,作为丙三醇三脂肪酸酯的配合量,优选为全部环氧树脂组合物中达到0.02~1重量%。当低于下限时,得不到充分的脱模性,而当超过上限时,有引起成型制品的外观污染及粘合性降低之虑。
在本发明的环氧树脂组合物中,将环氧树脂、苯酚固化剂、具有羧基的有机聚硅氧烷以及丙三醇三脂肪酸酯作为必要成分,但也可以配合其它作为主要构成成分的固化促进剂、无机填料等。
作为本发明中使用的固化促进剂,只要能促进环氧基与酚性羟基的固化反应即可,可以使用密封材料中通常使用的固化促进剂。例如,可以举出1,8-二氮杂双环(5,4,0)十一碳烯-7等二氮杂双环链烯烃及其衍生物、三苯基膦、甲基二苯基膦等有机膦类;2-甲基咪唑等咪唑化合物、四苯基鏻鎓·四苯基硼酸酯等四取代鏻鎓·四取代硼酸酯等,这些既可单独使用,也可混合使用。作为固化促进剂的配合量,优选为全部环氧树脂组合物中达到0.05~0.8重量%。
作为本发明中使用的无机填料,可以使用半导体密封用环氧树脂组合物中通常使用的无机填料。例如,熔融二氧化硅、结晶二氧化硅、滑石、氧化铝、氮化硅等,作为最优选使用的无机填料为球状熔融二氧化硅。这些无机填料,既可单独使用,也可混合使用。另外,也可对这些无机填料用偶合剂进行表面处理。作为无机填料的形状,为了改善流动性,尽可能采用真球状,并且粒度分布宽者为优选。优选无机填料的配合量,在全部环氧树脂组合物中达到78~93重量%。当低于下限时,得不到充分的耐焊锡性,而当超过上限时,有得不到充分的流动性之虑。
本发明的环氧树脂组合物是由环氧树脂、苯酚固化剂、具有羧基的有机聚硅氧烷、丙三醇三脂肪酸酯、固化促进剂及无机填料构成,除此以外,还可根据需要适当配合环氧硅烷、巯基硅烷、氨基硅烷、烷基硅烷、脲基硅烷、乙烯基硅烷等的硅烷偶合剂;钛酸酯偶合剂、铝偶合剂、铝/锆偶合剂等的偶合剂;炭黑等的着色剂;硅油、橡胶等的低应力添加剂;溴化环氧树脂及三氧化锑、氢氧化铝、氢氧化镁、硼酸锌、钼酸锌、磷腈等的阻燃剂等添加剂。
另外,本发明的环氧树脂组合物是用混合机把原料充分混合均匀后,再用热辊或捏合机等进行熔融混炼,冷却后进行粉碎而得到。
其次,图1是采用本发明涉及的环氧树脂组合物来密封半导体元件而得到的半导体装置之一例的剖面结构图。在芯片垫片102上,通过芯片焊接材料固化体106,固定半导体元件101。半导体元件101与引线框架104之间通过金属线103连接。半导体元件101被密封树脂105所密封。该半导体装置是采用上述组成的本发明的环氧树脂组合物作为密封树脂105,采用传递模塑、压缩模、注射模等以往的成型方法进行成型而得到的。
实施例
下面示出本发明的实施例,但本发明不受这些实施例的限定。配合比例为重量份。
<实施例1>
将下列组分进行混合,用热辊于95℃下混炼8分钟,冷却后进行粉碎,得到环氧树脂组合物。将得到的环氧树脂组合物,用下面的方法进行评价。将结果示于表1中。
E-1:用式(2)表示的环氧树脂(日本化药(株)制造,NC3000P,软化点58℃,环氧当量274):8.13重量份
H-1:用式(3)表示的环氧树脂(明和化成(株)制造,MEH-7851SS,软化点107℃,羟基当量203):5.47重量份
有机聚硅氧烷1:用式(4)表示的有机聚硅氧烷:0.20重量份
丙三醇三硬脂酸酯;0.20重量份
1,8-二氮杂双环(5,4,0)十一碳烯-7(一下称作DBU):0.20重量份
熔融球状二氧化硅(平均粒径21μm):85.00重量份
偶合剂(γ-环氧丙氧基丙基三甲氧基硅烷):0.40重量份
炭黑:0.40重量份。
[评价方法]
(1)螺旋流动:采用低压传递模塑成型机,向EMMI-1-66为基准的螺旋流动测定用模具中,于模具温度175℃、注入压力6.9MPa、固化时间120秒的条件下,注入环氧树脂组合物,测定流动长度。单位为cm。判断标准是低于70cm为不合格(×),70cm以上为合格(○)。
(2)连续成型性:采用低压传递模塑自动成型机,采用模具温度175℃、注入压力9.6MPa、固化时间70秒,对80pQFP(CuL/F,组件外尺寸:14mm×20mm×2mm厚、垫片尺寸:6.5mm×6.5mm,芯片尺寸:6.0mm×6.0mm)进行连续成型至700射出。判断标准是完全未发生末填充等问题的700射出连续成型的为◎,完全未发生末填充等问题的500射出连续成型的为○,其他为×。
(3)成型制品外观及模具污染:在上述连续成型中,对经过500射出及700射出后的组件及模具,肉眼观察污染状况。组件外观判断及模具污染标准是,达到700射出未污染的为◎,达到500射出未污染的为○,污染的为×。
(4)焊锡耐热性:将采用上述连续成型法成型的组件,于175℃下固化8小时后,将所得到的组件于85℃、相对湿度85%下加湿处理168小时后,分别于240℃与260℃的焊锡槽中,把各10个组件浸渍10秒中。用显微镜观察组件,算出裂纹发生率[(裂纹发生率)=(外部裂纹发生组件数)/(全部组件数)×100](单位为%)。评价的组件数为20个。另外,用超声波探伤装置观察半导体元件与环氧树脂组合物界面的粘合状态,评价是否发生剥离。评价的组件数为20个。耐焊锡裂纹性判断标准是于240℃及260℃的裂纹发生率为0%且无剥离的为◎,240℃的裂缝发生率为0且无剥离的为○,发生裂缝或剥离的为×。
<实施例2~11、比较例1~6>
按照表1、表2的配比,与实施例1同样,得到环氧树脂组合物,并与实施例1同样进行评价。将结果示于表1、表2。
除实施例1中使用的原材料以外,在该实施例及比较例中采用的原材料示于如下。
E-2:联苯基型环氧树脂(日本环氧树脂(株)制造,YX-4000,环氧当量190g/eq,熔点105℃)
E-3:正甲酚酚醛清漆型环氧树脂(日本化药(株)制造,EOCN-1020 62,环氧当量200g/eq,软化点62℃)
H-2:对二甲苯改性酚醛清漆型酚醛树脂(三井化学(株)制造,XLC-4L,环氧当量168g/eq,软化点62℃)
有机聚硅氧烷2:用式(5)表示的有机聚硅氧烷
有机聚硅氧烷3:用式(6)表示的有机聚硅氧烷
有机聚硅氧烷4:用式(7)表示的有机聚硅氧烷
熔融反应物A:将双酚A型环氧树脂(日本环氧树脂(株)制造,YL-6810,环氧当量170g/eq,熔点47℃)66.1重量份于140℃下加热熔融,添加33.1重量份的有机聚硅氧烷3(用式(6)表示的有机聚硅氧烷)及0.8重量份的三苯基膦,熔融混合30分钟,得到相当于(C-2)具有羧基的有机聚硅氧烷与环氧树脂的反应产物的熔融反应物A。
丙三醇三褐煤酸酯
丙三醇二褐煤酸酯
巴西棕榈蜡
[表1]
实施例 | ||||||||||||||
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | ||||
E-1 | 8.13 | 8.13 | 8.13 | 8.22 | 7.92 | 8.13 | 8.19 | 7.77 | 7.89 | 9.26 | ||||
E-2 | 3.81 | |||||||||||||
E-3 | 3.81 | |||||||||||||
H-1 | 5.47 | 5.47 | 5.47 | 5.53 | 5.33 | 5.47 | 5.51 | 5.23 | 5.31 | 6.24 | ||||
H-2 | 5.98 | |||||||||||||
有机聚硅氧烷1 | 0.20 | |||||||||||||
有机聚硅氧烷2 | 0.20 | |||||||||||||
有机聚硅氧烷3 | 0.20 | 0.05 | 0.55 | 0.20 | 0.20 | 0.20 | 0.20 | 2.60 | ||||||
有机聚硅氧烷4 | ||||||||||||||
熔融反应物A | 0.6 | |||||||||||||
丙三醇三硬脂酸酯 | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 | 0.90 | |||||||
丙三醇三褐煤酸酯 | 0.20 | 0.10 | 0.80 | 0.20 | ||||||||||
丙三醇二褐煤酸酯 | ||||||||||||||
巴西棕榈蜡 | ||||||||||||||
DBU | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 | |||
熔融球状二氧化硅 | 85.00 | 85.00 | 85.00 | 85.00 | 85.00 | 85.00 | 85.00 | 85.00 | 85.00 | 85.00 | 80.00 | |||
偶合剂 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | |||
炭黑 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | |||
螺旋流动 | 值(cm) | 100 | 120 | 108 | 120 | 105 | 110 | 108 | 105 | 110 | 120 | 165 | ||
判断 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | |||
连续成型性 | ◎ | ○ | ◎ | ◎ | ◎ | ◎ | ○ | ◎ | ◎ | ◎ | ◎ | |||
成型制品外观及模具污染 | ◎ | ◎ | ◎ | ○ | ◎ | ◎ | ◎ | ○ | ◎ | ◎ | ◎ | |||
焊锡耐热性 | 240℃ | 裂纹发生率(%) | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | |
剥离 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | |||
260℃ | 裂纹发生率(%) | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 25 | 25 | ||
剥离 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | 有 | 有 | |||
判断 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ | ○ | ○ | |||
综合判断 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ |
[表2]
比较例 | ||||||||
1 | 2 | 3 | 4 | 5 | 6 | |||
E-1 | 8.25 | 8.25 | 8.13 | 8.13 | 8.13 | 8.37 | ||
E-2 | ||||||||
E-3 | ||||||||
H-1 | 5.55 | 5.55 | 5.47 | 5.47 | 5.47 | 5.63 | ||
H-2 | ||||||||
有机聚硅氧烷1 | ||||||||
有机聚硅氧烷2 | ||||||||
有机聚硅氧烷3 | 0.20 | 0.20 | 0.20 | |||||
有机聚硅氧烷4 | 0.20 | |||||||
熔融反应物A | ||||||||
丙三醇三硬脂酸酯 | 0.20 | 0.20 | ||||||
丙三醇三褐煤酸酯 | ||||||||
丙三醇二褐煤酸酯 | 0.20 | |||||||
巴西棕榈蜡 | 0.20 | |||||||
DBU | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 | 0.20 | ||
熔融球状二氧化硅 | 85.00 | 85.00 | 85.00 | 85.00 | 85.00 | 85.00 | ||
偶合剂 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | ||
炭黑 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | 0.40 | ||
螺旋流动 | 值(cm) | 105 | 115 | 100 | 118 | 103 | 95 | |
判断 | ○ | ○ | ○ | ○ | ○ | ○ | ||
连续成型性 | × | ○ | ○ | × | × | × | ||
成型制品外观及模具污染 | ○ | × | × | ○ | ○ | × | ||
焊锡耐热性 | 240℃ | 裂纹发生率(%) | 0 | 0 | 0 | 0 | 0 | 0 |
剥离 | 无 | 无 | 无 | 无 | 无 | 无 | ||
260℃ | 裂纹发生率(%) | 0 | 0 | 0 | 0 | 0 | 0 | |
剥离 | 无 | 无 | 无 | 无 | 无 | 无 | ||
判断 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ | ||
综合判断 | × | × | × | × | × | × |
产业上的可利用性
按照本发明,在半导体装置安装时,显示出优良的焊锡耐热性的同时,可以解决半导体元件密封成型时的作为以往缺陷的脱模性、连续成型性、成型制品外观,模具污染等问题,因此,可适用于工业上树脂密封型半导体装置的制造,特别是适用于表面安装用的树脂密封型半导体装置的制造。
Claims (7)
1.一种半导体密封用环氧树脂组合物,其特征在于,含有(A)环氧树脂、(B)酚醛树脂、(C)(C-1)具有羧基的有机聚硅氧烷及/或(C-2)具有羧基的有机聚硅氧烷与环氧树脂的反应产物、以及(D)丙三醇三脂肪酸酯。
3.按照权利要求1或2中所述的半导体密封用环氧树脂组合物,其特征在于,上述(D)丙三醇三脂肪酸酯为丙三醇与碳原子数为24~36的饱和脂肪酸的三酯。
4.按照权利要求1~3中任何一项所述的半导体密封用环氧树脂组合物,其特征在于,上述(C)成分与上述(D)成分的重量比(C)/(D)为3/1~1/5。
7.一种半导体装置,其特征在于,其采用权利要求1~6中任何一项所述的半导体密封用环氧树脂组合物来密封半导体元件而制成的。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004075414 | 2004-03-16 | ||
JP075414/2004 | 2004-03-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1934156A true CN1934156A (zh) | 2007-03-21 |
CN100519619C CN100519619C (zh) | 2009-07-29 |
Family
ID=34975543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800084595A Active CN100519619C (zh) | 2004-03-16 | 2005-03-15 | 环氧树脂组合物及半导体装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20070196664A1 (zh) |
JP (1) | JP5338028B2 (zh) |
KR (1) | KR101149453B1 (zh) |
CN (1) | CN100519619C (zh) |
MY (1) | MY159179A (zh) |
SG (2) | SG184731A1 (zh) |
TW (1) | TWI398461B (zh) |
WO (1) | WO2005087834A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111393854A (zh) * | 2012-10-19 | 2020-07-10 | 三菱瓦斯化学株式会社 | 树脂组合物、预浸料、层压板、以及印刷电路板 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4590899B2 (ja) * | 2004-03-30 | 2010-12-01 | 住友ベークライト株式会社 | 金型離型回復樹脂組成物及び半導体装置の製造方法 |
JP4765310B2 (ja) * | 2004-12-24 | 2011-09-07 | 住友ベークライト株式会社 | 樹脂封止型半導体装置の製造方法 |
JP4973146B2 (ja) * | 2006-11-20 | 2012-07-11 | 住友ベークライト株式会社 | エポキシ樹脂組成物、封止用エポキシ樹脂組成物及び電子部品装置 |
JP5024073B2 (ja) * | 2007-02-16 | 2012-09-12 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP4930145B2 (ja) * | 2007-03-28 | 2012-05-16 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP5157473B2 (ja) * | 2007-03-28 | 2013-03-06 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP4973322B2 (ja) * | 2007-06-04 | 2012-07-11 | 住友ベークライト株式会社 | エポキシ樹脂組成物及び半導体装置 |
JP5169285B2 (ja) * | 2007-08-22 | 2013-03-27 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP5169287B2 (ja) * | 2007-09-21 | 2013-03-27 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP5169288B2 (ja) * | 2007-09-21 | 2013-03-27 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
KR101309820B1 (ko) * | 2010-12-29 | 2013-09-23 | 제일모직주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자 |
US10030141B2 (en) * | 2012-10-19 | 2018-07-24 | Mitsubishi Gas Chemical Company, Inc. | Resin composition, pre-preg, laminate, metal foil-clad laminate, and printed wiring board |
US10163765B2 (en) | 2016-04-19 | 2018-12-25 | Kabushiki Kaisha Toshiba | Semiconductor device that includes a molecular bonding layer for bonding of elements |
KR102112865B1 (ko) * | 2017-11-06 | 2020-05-19 | 삼성에스디아이 주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6011973B2 (ja) * | 1981-10-21 | 1985-03-29 | ト−レ・シリコ−ン株式会社 | 成形用エポキシ樹脂組成物 |
JPH01319529A (ja) * | 1988-06-20 | 1989-12-25 | Denki Kagaku Kogyo Kk | エポキシ樹脂組成物 |
JP2987180B2 (ja) * | 1990-08-29 | 1999-12-06 | 東レ・ダウコーニング・シリコーン株式会社 | 硬化性エポキシ樹脂組成物 |
JP3012358B2 (ja) * | 1991-04-30 | 2000-02-21 | 東レ・ダウコーニング・シリコーン株式会社 | 加熱硬化性エポキシ樹脂組成物 |
JPH0669379A (ja) * | 1991-05-13 | 1994-03-11 | Nitto Denko Corp | 半導体装置 |
JP2000044774A (ja) * | 1998-07-28 | 2000-02-15 | Toray Ind Inc | 半導体封止用エポキシ樹脂組成物および半導体装置 |
JP2000103938A (ja) * | 1998-09-25 | 2000-04-11 | Matsushita Electric Works Ltd | 封止用のエポキシ樹脂組成物および半導体装置 |
US6610406B2 (en) * | 2000-03-23 | 2003-08-26 | Henkel Locktite Corporation | Flame retardant molding compositions |
JP4411760B2 (ja) * | 2000-09-06 | 2010-02-10 | 住友ベークライト株式会社 | エポキシ樹脂組成物及び半導体装置 |
JP4770024B2 (ja) * | 2001-01-17 | 2011-09-07 | 住友ベークライト株式会社 | エポキシ樹脂組成物及び半導体装置 |
JP5008222B2 (ja) * | 2001-01-26 | 2012-08-22 | 住友ベークライト株式会社 | エポキシ樹脂組成物及び半導体装置 |
JP2003105057A (ja) * | 2001-09-28 | 2003-04-09 | Toray Ind Inc | エポキシ樹脂組成物及び半導体装置 |
JP2003252960A (ja) * | 2002-03-05 | 2003-09-10 | Toray Ind Inc | エポキシ樹脂組成物及びそれを用いた樹脂封止型半導体装置 |
-
2005
- 2005-03-14 TW TW94107659A patent/TWI398461B/zh not_active IP Right Cessation
- 2005-03-14 MY MYPI20051065A patent/MY159179A/en unknown
- 2005-03-15 JP JP2006511039A patent/JP5338028B2/ja active Active
- 2005-03-15 CN CNB2005800084595A patent/CN100519619C/zh active Active
- 2005-03-15 SG SG2012066528A patent/SG184731A1/en unknown
- 2005-03-15 SG SG200901749-2A patent/SG151268A1/en unknown
- 2005-03-15 US US10/592,643 patent/US20070196664A1/en not_active Abandoned
- 2005-03-15 KR KR1020067019468A patent/KR101149453B1/ko active IP Right Grant
- 2005-03-15 WO PCT/JP2005/004555 patent/WO2005087834A1/ja active Application Filing
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111393854A (zh) * | 2012-10-19 | 2020-07-10 | 三菱瓦斯化学株式会社 | 树脂组合物、预浸料、层压板、以及印刷电路板 |
CN111393854B (zh) * | 2012-10-19 | 2022-02-25 | 三菱瓦斯化学株式会社 | 树脂组合物、预浸料、层压板、以及印刷电路板 |
Also Published As
Publication number | Publication date |
---|---|
CN100519619C (zh) | 2009-07-29 |
US20070196664A1 (en) | 2007-08-23 |
SG184731A1 (en) | 2012-10-30 |
KR101149453B1 (ko) | 2012-05-25 |
SG151268A1 (en) | 2009-04-30 |
WO2005087834A1 (ja) | 2005-09-22 |
KR20070012655A (ko) | 2007-01-26 |
JP5338028B2 (ja) | 2013-11-13 |
MY159179A (en) | 2016-12-30 |
TW200609263A (en) | 2006-03-16 |
TWI398461B (zh) | 2013-06-11 |
JPWO2005087834A1 (ja) | 2008-01-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1934156A (zh) | 环氧树脂组合物及半导体装置 | |
CN1854186A (zh) | 半导体密封用环氧树脂组合物及半导体装置 | |
CN1738864A (zh) | 环氧树脂组合物和利用该环氧树脂组合物的半导体装置 | |
CN1207319C (zh) | 半导体装置及其制法 | |
CN1908065A (zh) | 环氧树脂组合物以及半导体装置 | |
CN1957013A (zh) | 用于封装半导体的树脂组合物及半导体装置 | |
CN101906238B (zh) | 环氧树脂组合物及半导体装置 | |
CN1876710A (zh) | 用于封装光学半导体元件的环氧树脂组合物及使用该组合物的光学半导体器件 | |
CN1238421C (zh) | 封装半导体用环氧树脂组合物和半导体器件 | |
JP6300744B2 (ja) | 半導体封止用樹脂組成物及び半導体装置 | |
CN1847308A (zh) | 阻燃剂及包含该阻燃剂的半导体密封用环氧树脂组合物 | |
WO2005097892A1 (ja) | 半導体封止用エポキシ樹脂組成物及び半導体装置 | |
CN101039984B (zh) | 环氧树脂组合物及半导体装置 | |
CN1745119A (zh) | 环氧树脂组合物和半导体器件 | |
CN101077967A (zh) | 半导体包封用环氧树脂组合物以及半导体装置 | |
CN1854185A (zh) | 半导体密封用环氧树脂组合物及半导体装置 | |
CN1934157A (zh) | 环氧树脂组合物和半导体装置 | |
JP4952283B2 (ja) | エポキシ樹脂組成物及び半導体装置 | |
KR100673630B1 (ko) | 반도체 소자 밀봉용 에폭시 수지 조성물 | |
JP2007039655A (ja) | 半導体封止用エポキシ樹脂組成物及び半導体装置 | |
CN1761692A (zh) | 封装半导体芯片的树脂组合物和采用它的半导体装置 | |
KR100673626B1 (ko) | 반도체 소자 밀봉용 에폭시 수지 조성물 | |
KR100673629B1 (ko) | 반도체 소자 밀봉용 에폭시 수지 조성물 | |
KR100678683B1 (ko) | 반도체 소자 밀봉용 에폭시 수지 조성물 | |
KR100655131B1 (ko) | 반도체 소자 밀봉용 에폭시 수지 조성물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |