CN1761692A - 封装半导体芯片的树脂组合物和采用它的半导体装置 - Google Patents
封装半导体芯片的树脂组合物和采用它的半导体装置 Download PDFInfo
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- CN1761692A CN1761692A CNA2004800076611A CN200480007661A CN1761692A CN 1761692 A CN1761692 A CN 1761692A CN A2004800076611 A CNA2004800076611 A CN A2004800076611A CN 200480007661 A CN200480007661 A CN 200480007661A CN 1761692 A CN1761692 A CN 1761692A
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
本发明公开了一种封装半导体芯片的环氧树脂组合物,该组合物具有良好的流动性而不损坏固化性。尤其是,本发明提供一种封装半导体芯片的树脂组合物,它包含下述主要组分:含亚联苯基结构的苯酚芳烷型环氧树脂(A),含亚苯基或亚联苯基结构的苯酚芳烷型树脂(B),占环氧树脂组合物总量84wt%-90wt%的无机填料(C)和固化促进剂,该环氧树脂组合物还含有占环氧树脂组合物总量0.01wt%-1wt%的硅烷偶联剂(E),以及包含两个或更多羟基的化合物(F),所述羟基与芳香环上各相邻碳原子结合,该化合物(F)占环氧树脂组合物总量的0.01wt%或更多。
Description
技术领域
本发明涉及一种封装半导体芯片的树脂组合物和采用该树脂组合物的半导体装置。
背景技术
由于环氧树脂在生产率、成本和可靠性方面的良好平衡特性,近年来,环氧树脂组合物已被主要用在半导体芯片的封装上。随着半导体装置的大小和厚度的降低,需要具有更低粘性和更高强度的封装用环氧树脂组合物。此外,考虑到环境的因素,越来越需要制备一种不含有阻燃剂如Br化合物和锑氧化物的耐火装置。鉴于这种情况,目前的研究明显趋向于采用更低粘性的树脂并往环氧树脂组合物中添加更多的无机填料。
作为一种新趋势,往往使用具有比常规焊料熔点更高的无铅焊料来装配半导体装置。在使用这种焊料时,需要将温度升至高于常规温度约20℃,由此装配得到的半导体装置比现有技术的装置更加不可靠。因此,越来越需要通过提供一种高水平的环氧树脂组合物来改善半导体装置的可靠性,并能进一步促进树脂粘性的降低和无机填料量的增加。
在现有技术中,通过使用具有低熔融粘度的树脂(专利文件1),或者用硅烷偶联剂表面处理无机填料来增加无机填料的量(专利文件2),可以保持成型时的低粘性和高流动性。
但是,这些方法中的任何一种都无法同时满足抗龟裂性、高流动性和耐火性这些全部要求。因而,目前所需的技术是,使用一种具有改进的抗龟裂性和耐火性能的树脂,并能增加无机填料的量以便充分改善可靠性而不会损坏流动性或固化特性。
专利文件1:日本专利申请NO:1995-130919(pp.2-5)
专利文件2:日本专利申请NO:1996-20673(pp.2-4)
发明概述
考虑到上述情况,本发明的目的在于提供一种技术,使得封装半导体芯片的树脂组合物在成型时候的流动性能提高,而同时不损坏其固化特性。
本发明提供了一种封装半导体芯片的树脂组合物,包括:由通式(1)表示的环氧树脂(A),由通式(2)表示的酚树脂(B),和无机填料(C);固化促进剂(D);硅烷偶联剂(E);以及包含两个或更多羟基的化合物(F),其中所述的羟基与芳香环上各相邻碳原子结合。
在上述通式(1)中,R代表氢或具有至多4个碳原子的烷基;n是平均值在1-10之间的正数。
在上述通式(2)中,R1代表亚苯基或亚联苯基;R2代表具有至多4个碳原子的烷基;n是平均值在1-10之间的正数。
本发明用于封装半导体芯片的树脂组合物包含通式(1)和通式(2)表示的树脂,并进一步包含必要成分化合物(F),因而能确保充分的固化性和流动性。
本发明用于封装半导体芯片的树脂组合物包含环氧树脂(A),酚树脂(B),无机填料(C),和固化促进剂(D)作为主要成分。
本发明用于封装半导体芯片的树脂组合物可包含大于等于0.01wt%的化合物(F),它能进一步改进成型时的流动性而不会损坏固化特性。
本发明用于封装半导体芯片的树脂组合物可包含硅烷偶联剂(E),偶联剂的量为大于等于0.01wt%至小于等于1wt%,它能进一步改进成型时的流动性和固化特性。
本发明用于封装半导体芯片的树脂组合物包含大于等于84wt%至小于等于90wt%无机填料(C),它能确保树脂组合物具有更低粘性和更高强度。
在本发明用于封装半导体芯片的树脂组合物中,化合物(F)可包含两个羟基,这两个羟基与芳香环上各相邻碳原子结合在一起,它能保证成型时具有合适的固化性和流动性。
在本发明用于封装半导体芯片的树脂组合物中,芳香环可以是萘环,它能在成型时进一步改进固化性和流动性。
在本发明用于封装半导体芯片的树脂组合物中,化合物(F)可包含两个羟基,这两个羟基与萘环上各相邻碳原子结合在一起,该化合物能进一步改进成型时固化性和流动性之间的平衡。
本发明还提供了一种半导体装置,其中使用上述的半导体芯片封装用树脂组合物来封装半导体芯片。由于本发明的半导体装置是由所述的半导体芯片封装用树脂组合物来封装的,因而能完全确保生产稳定性。
如上所述,本发明提供一种用于封装半导体芯片的树脂组合物,该组合物在成型时具有良好的流动性并能同时保持固化性。
附图说明
参照下述优选实施方式和附图,本发明的目的、特征和优点将更加清楚。
图1示出了本发明实施方式中半导体装置结构例的剖面图。
发明详述
本发明的树脂组合物包含下列必要成分:
通式(1)表示的环氧树脂(A):
在上述通式(1)中,R代表氢或具有至多4个碳原子的烷基;n是平均值在1-10之间的正数;
通式(2)表示的酚树脂(B):
在上述通式(2)中,R1代表亚苯基或亚联苯基;R2代表具有至多4个碳原子的烷基;n是平均值在1-10之间的正数;
无机填料(C);
固化促进剂(D);
硅烷偶联剂(E)和
包含两个或更多羟基的化合物(F),其中所述的羟基与芳香环上各相邻碳原子结合。
本发明的环氧树脂组合物包含的组分如下述:
(A):1-40wt%
(B):1-40wt%
(C):40-97wt%
(D):0.001-5wt%
(E):0.01-1wt%
(F):0.01-1wt%
下面将要描述本发明用来封装半导体芯片的环氧树脂的每一组分。
由通式(1)表示的环氧树脂在主链内具有疏水的刚性亚联苯基结构。因而,包含该树脂的环氧树脂组合物固化产品在高于玻璃化温度(后面用“Tg”表示)的高温范围内具有较低的吸湿系数和较低的弹性模量,并对半导体芯片、有机基底和金属基底表现出良好的粘附性。该产品还表现出良好的阻燃性,并且由于它的低交联密度而表现出更高的耐热性能。
通式(1)表示的环氧树脂(A)的例子包括苯酚-联苯基芳烷基型环氧树脂,但是具有式(1)结构的树脂能不受限地使用。
通式(1)的环氧树脂可与另一个环氧树脂结合使用,只要先前树脂的效果不受损害。可以结合使用的环氧树脂的例子包括联苯基型环氧树脂,双酚型环氧树脂,均二苯代乙烯型环氧树脂,苯酚酚醛型环氧树脂,甲酚酚醛型环氧树脂,三苯酚甲烷型环氧树脂,苯酚芳烷基型环氧树脂,萘酚型环氧树脂,烷基改性的三苯酚甲烷型环氧树脂,含三嗪结构型环氧树脂和二环戊二烯改性型苯酚环氧树脂。
根据用于封装半导体芯片的环氧树脂组合物的耐湿可靠性,优选尽可能去除离子杂质Na和Cl离子。考虑到固化性,环氧当量可以是例如100g/eq至500g/eq。
通式(2)表示的酚树脂(B)在主链内具有疏水的亚苯基或疏水的刚性亚联苯基结构。因而,包含该树脂的环氧树脂组合物固化产品在高于Tg的高温范围内具有较低的吸湿系数和较低的弹性模量,并对半导体芯片、有机基底和金属基底表现出良好的粘附性。该产品还表现出良好的阻燃性,并由于它的低交联密度而表现出更高的耐热性能。
通式(2)表示的酚树脂(B)的例子包括苯酚联苯基芳烷基树脂和苯酚芳烷基树脂,但是那些具有式(2)结构的树脂可不受限地使用。
在本发明中,通式(2)表示的酚树脂可与另一个酚树脂结合使用,只要先前酚树脂的效果不受损害。可以结合使用的酚树脂的例子包括苯酚酚醛树脂,甲酚酚醛树脂,三苯酚甲烷树脂,萜烯改性的酚树脂,二环戊二烯改性的酚树脂以及萘酚芳烷基树脂(包括亚苯基或亚联苯基结构)。考虑到固化性,羟基当量例如可以是优选90g/eq至250g/eq。
通常用于封装材料的无机填料(C)一般包括熔融石英、球形二氧化硅、晶体二氧化硅、氧化铝、氮化硅和氮化铝。根据模具的填充特性,无机填料的粒度可以是0.01μm至150μm,包括两端数值。
无机填料(C)的填充量例如可以是占环氧树脂组合物总量的84wt%至90wt%,包括两端数值。如果填充量太低,环氧树脂组合物固化产品的水吸收就会增加,导致强度下降并由此导致耐焊性不足。如果填充量太高,则会损坏流动性,导致可成型性受损。
固化促进剂(D)可以是能促进环氧树脂中的环氧基和酚树脂中的羟基反应的任何化合物,并可以选自作为半导体芯片封装材料的环氧树脂组合物中通常使用的促进剂。特定的例子包括含磷化合物,例如有机膦,四-取代鏻化合物和phosphobetaine化合物;含氮化合物,例如1,8-二氮杂二环(5,4,0)-十一碳烯-7,苄基二甲基胺和2-甲基咪唑。
有机膦的例子包括伯膦,例如乙膦和苯膦;仲磷,例如二甲基膦和二苯膦;叔膦,例如三甲基膦、三乙基膦、三丁基膦和三苯基膦。
四-取代鏻化合物可以是通式(3)表示的化合物:
在上述通式(3)中,P是磷;R1,R2,R3和R4是取代的或未取代的芳基或烷基;A是芳香有机酸的阴离子,该芳香有机酸具有选自下述的官能团:芳香环中的羟基、羧基和硫醇基;AH是具有至少一个选自芳香环中的羟基、羧基和硫醇基的芳香有机酸;a和b是1至3之间的整数;c是0至3之间的整数,条件是a=b。
通式(3)表示的化合物可采用下述方法制备。首先,溴化四-取代鏻、芳香有机酸和碱在有机溶剂中混合,并在溶液系统中均匀混合来产生芳香有机酸阴离子。然后,加入水,可沉淀得到通式(3)表示的化合物。
在通式(3)表示的优选的化合物中,与磷相连的R1、R2、R3和R4是苯基;AH是在芳环上具有羟基的化合物,即酚化合物;A优选是酚化合物的阴离子。
phosphobetaine是通式(4)表示的化合物:
在上述通式(4)中,X是氢或具有1-3个碳原子的烷基;Y是氢或羟基;m和n是1-3之间的整数。
通式(4)表示的化合物可以通过下述方法制得。首先,碘苯酚和三芳香基取代的膦在有机溶剂中均匀混合并使用镍催化剂,产物以碘盐形式沉淀。碘盐和碱在有机溶剂中均匀混合,如果必要的话,加入水来沉淀通式(4)表示的化合物。
通式(4)表示的化合物可选自,但不限于其中X是氢或甲基,Y是氢或羟基的化合物,这些化合物可以单独使用或两个或更多联合使用。
固化促进剂(D)的量可以是环氧树脂组合物总量的0.1wt%至1wt%,包括两端数值,优选包括两端数值在内的0.1wt%至0.6wt%。如果固化促进剂(D)的量太低,则可能达不到所需水平的固化,而固化促进剂的量太高时,会损坏流动性。
硅烷偶联剂(E)可选自环氧硅烷、氨基硅烷、脲基硅烷和巯基硅烷。但是,不加限制的话,该偶联剂可以是能在环氧树脂组合物和无机填料之间发生反应以改进环氧树脂组合物与无机填料之间界面强度的任意一种偶联剂。
包含两个和更多羟基基团的化合物(F)中的羟基与芳香环上各相邻碳原子结合(后文称之为“化合物(F)”),该化合物F能与硅烷偶联剂(E)一起通过协同效果来显著改进粘性和流动性。硅烷偶联剂(E)对于化合物(F)发挥充分的效果是必需的。
硅烷偶联剂(E)可单独使用或两个或多个一起使用。硅烷偶联剂(E)的含量可以是环氧树脂组合物总量的0.01wt%至1wt%,优选0.05wt%至0.8wt%,更优选0.1wt%至0.6wt%。如果含量太低,化合物(F)可能无法充分有效,并且会损坏半导体封装件的耐焊性。如果含量太大,环氧树脂组合物也会由于吸水而损坏半导体封装件的耐焊性。
包含两个和更多羟基基团的化合物(F)中的羟基与芳香环上各相邻碳原子结合,该化合物(F)包含任意的除了羟基基团之外的取代基。化合物(F)是由通式(5)表示的单环化合物,或由通式(6)表示的多环化合物。
在上述通式(5)中,R1和R5中的一个是羟基,当一个是羟基时另一个氢、羟基或除了羟基之外的取代基;R2、R3和R4是氢、羟基或除了羟基之外的取代基。
在上述通式(6)中,R1和R7中的一个是羟基,当一个是羟基时另一个氢、羟基或除了羟基之外的取代基;R2、R3、R4、R5和R6是氢、羟基或除了羟基之外的取代基。
由通式(5)表示的单环化合物的例子包括儿茶酚、焦酚、五倍子酸、五倍子酸酯,和它们的衍生物。由通式(6)表示的多环化合物包括1,2-二羟基萘,2,3-二羟基萘和它们的衍生物。
尤其是,上述的化合物优选具有与芳环相邻的两个羟基基团,来提高流动性和容易控制固化的特性。鉴于捏合过程中的挥发性,核心环可优选为萘环,因为萘环的挥发性低且重量稳定。
化合物(F)可以是例如含萘的化合物,如1,2-二羟基萘,2,3-二羟基萘和它们的衍生物。这些化合物可在处理环氧树脂组合物过程中用来进一步提高控制性,并降低环氧树脂组合物的挥发性。
化合物(F)可以两个或多个组合使用。
化合物(F)的含量可以是环氧树脂组合物总量的0.01wt%至0.5wt%,优选0.02wt%至0.3wt%。如果含量太低,可能就无法获得与硅烷偶联剂(E)通过协同效果而产生的预期的粘性或流动特性;如果含量太大,环氧树脂组合物的固化就会被抑制,导致损坏固化产物的物理特性,从而会有损树脂封装半导体芯片时的性能。
尽管本发明的环氧树脂组合物包括上述必要组分(A)到(F),如果需要的话,它还可以包括添加剂,所述的添加剂包括阻燃剂,例如溴化环氧树脂和三氧化锑;脱模剂;着色剂例如碳黑;低应力添加剂如硅油和硅橡胶;以及合适的无机离子交换剂。
本发明环氧树脂组合物可以通过下述方法制备:常温下,在混合器中均匀混合组分(A)至(F)和其它添加剂,接着使用合适的装置如热辊、捏和机或挤出机来熔融捏练,冷却然后研磨。
为使用本发明的环氧树脂组合物封装半导体芯片来制备半导体装置,可采用合适的成型方法如传递模塑法、压缩模塑法和注射成型法来使组合物铸型和固化。
本发明的环氧树脂组合物可适于用来封装多种半导体芯片。例如,它能用于作为表面装配型半导体装置例如QFP(四列直插式扁平封装件)和TSOP(薄小外形封装件)的封装树脂。图1是采用本发明的环氧树脂组合物制得的半导体装置结构的剖面图。半导体芯片1通过固化的冲模粘合材料6被固定在冲模垫2上。金线3连接半导体芯片1与铅框4。采用封装树脂5来封装半导体芯片1。
图1所述半导体装置的制备可采用合适的方法如传递模塑法、压缩模塑法和注射成型法来使作为封装树脂5的上述环氧树脂组合物铸型和固化,然后封装半导体芯片1。
由于图1所示的半导体装置被含有化合物(F)的封装树脂组合物所封装,该化合物(F)包含两个和更多羟基基团,所述羟基与芳香环上各相邻碳原子所结合,因而能获得封装树脂组合物的合适粘度和流动特性。因此,能稳定提供具有良好成型性的半导体装置。
使用包含通式(1)的环氧树脂和通式(2)的酚树脂的环氧树脂组合物来封装半导体芯片,则能更稳定地提供具有更好的阻燃性和耐焊性的半导体装置。
参考实施例对本发明展开更明确的描述,但本发明并不限于这些实施例。本发明的公开中,混合比例以重量份表示。
实施例1
苯酚联苯基芳烷基型环氧树脂(Nippon Kayaku Co.,Ltd.,NC3000-P,环氧当量:274,通式(1)中的“n”平均为2.8,软化点:58℃):7.35重量份;
苯酚联苯基芳烷基树脂(Meiwa Kasei Co.,Ltd.,MEH-7851SS,羟基当量:203,通式(2)中的“n”平均为2.5,软化点:65℃):5.5重量份;
球形熔融石英(平均颗粒尺寸:30μm):86.0重量份;
γ-缩水甘油丙基-三甲氧硅烷:0.4重量份;
三苯基膦:0.2重量份;
2,3-二羟基萘(试剂级):0.05重量份;
巴西棕榈蜡:0.2重量份;和
碳黑:0.3重量份
于室温下在混合器中混合,接着用热辊在80℃-100℃下熔融捏练,冷却,然后研磨得到环氧树脂组合物。所得的环氧树脂组合物进行下述测定。测定结果见表1。
螺旋流动度:环氧树脂组合物通过低压传递模塑机在175℃的温度、6.9MPa的成型压力和压力保持时间120秒的条件下使用符合EMMI-1-66的模具来成型,然后测定螺旋流动度。螺旋流动度是流动性的参数。该参数越大,则流动性越好。单位是“cm”。
固化扭矩比:使用curastometer(Orientec Inc.,JSR Curastometer TypeIVPS),从175℃的成型温度开始加热后的90和300秒后测定扭矩,计算固化扭矩比=(90秒后的力矩)/(300秒后的力矩)。用curastometer测定的扭矩是热硬化的参数。固化扭矩比越大,则固化性越好。单位是“%”。
耐焊性-回流龟裂:使用低压传递模塑机,使附有6×6×0.3mm Si芯片的14×14×1.4mm的100pQFP框(Cu框)在下述成型条件下成型:成型温度为175℃,注射时间为10秒,固化时间为90秒以及注射压力为9.8MPa。在175℃固化后的8小时,在85℃和85%湿度的环境下湿化48小时,在最高温度260℃下连续3次(三次,每次在255℃或更高温度下10秒钟)通过IR回流。然后,使用超声测试仪检测内部的龟裂和分层情况。测试是根据10个封装件中的芯片的分层数目和内部龟裂数目。
阻燃性:使用低压传递模塑机,在成型温度175℃、注射时间15秒、固化时间120秒和注射压力9.8MPa的条件下制备厚度为3.2mm的阻燃用测试纸,然后按照UL94的规定来测试阻燃性。
实施例2-13和比较例1-15
根据表1和2所示的混合比率,按照实施例1所述的方法来制备和测定环氧树脂组合物。测定结果见表1和2。
除了实施例1中的组分,所用的其它组分如下:
联苯基型环氧树脂(Japan Epoxy Resin Inc.,YX4000H,环氧当量:195,熔融温度:105℃);
苯酚芳烷基树脂(Mitsui Chemical Inc.,XLC-LL,羟基当量:174,通式(2)中的“n”平均为3.6,软化点:79℃);
甲酚酚醛型环氧树脂(Nippon Kayaku Co.,Ltd.,EOCN 1020-55,环氧当量:198,软化点:55℃);
苯酚酚醛树脂(羟基当量:104,软化点:80℃);
γ-巯基丙基三甲氧硅烷;
1,8-二氮杂双环(5,4,0)十一碳烯-7(此后称为“DBU”);
通式(7)表示的固化促进剂;
通式(8)表示的固化促进剂;
1,2-二羟基萘(试剂级);
儿茶酚(试剂级);
焦酚(试剂级);
1,6-二羟基萘(试剂级);和
间苯二酚(试剂级)。
表1
实施例 | ||||||||||||||
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | ||
苯酚联苯基芳烷基型环氧树脂 | 7.35 | 4.0 | 8.65 | 7.5 | 7.13 | 7.42 | 7.35 | 7.35 | 7.35 | 7.35 | 7.35 | 7.35 | 7.35 | |
联苯基型环氧树脂 | 1.0 | |||||||||||||
苯酚联苯基芳烷基树脂 | 6.5 | 2.5 | 5.5 | 5.5 | 5.3 | 5.5 | 5.5 | 5.5 | 5.5 | 5.5 | 5.5 | 5.45 | 5.45 | |
苯酚芳烷基树脂 | 1.3 | |||||||||||||
球形熔融石英 | 86.0 | 90.0 | 84.5 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | |
γ-缩水甘油丙基三甲氧硅烷 | 0.4 | 0.5 | 0.3 | 0.05 | 0.85 | 0.03 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | ||
γ-巯基丙基三甲氧硅烷 | 0.4 | |||||||||||||
三苯膦 | 0.2 | 0.13 | 0.25 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | ||||
DBU | 0.2 | |||||||||||||
通式(7)的固化促进剂 | 0.25 | |||||||||||||
通式(8)的固化促进剂 | 0.25 | |||||||||||||
2,3-二羟基萘 | 0.05 | 0.07 | 0.1 | 0.25 | 0.02 | 0.35 | 0.05 | 0.05 | 0.05 | 0.05 | ||||
1,2-二羟基萘 | 0.05 | |||||||||||||
儿茶酚 | 0.05 | |||||||||||||
焦酚 | 0.05 | |||||||||||||
1,6-二羟基萘 | ||||||||||||||
间苯二酚 | ||||||||||||||
巴西棕榈蜡 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | |
碳黑 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | |
螺旋流动度 (cm) | 100 | 58 | 121 | 115 | 96 | 118 | 104 | 89 | 113 | 106 | 102 | 112 | 105 | |
固化扭矩比 (%) | 65 | 61 | 66 | 60 | 68 | 58 | 63 | 64 | 61 | 63 | 61 | 85 | 89 | |
耐焊性-龟裂 | 芯片分层 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
内部龟裂 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | |
阻燃性 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 |
表2
对比例 | ||||||||||||||||
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | ||
苯酚联苯基芳烷基型环氧树脂 | 7.4 | 3.6 | 9.5 | 9.4 | 7.4 | 7.1 | 7.5 | 7.41 | 7.6 | 7.35 | 7.35 | 7.4 | 7.35 | 7.35 | ||
联苯基型环氧树脂 | 0.9 | |||||||||||||||
甲酚酚醛型环氧树脂 | 6.9 | |||||||||||||||
苯酚双苯基芳烷基树脂 | 5.5 | 2.3 | 6.35 | 5.5 | 5.25 | 5.52 | 5.48 | 5.65 | 5.5 | 5.5 | 5.5 | 5.5 | 5.5 | |||
苯酚芳烷基树脂 | 1.0 | 6.0 | ||||||||||||||
苯酚酚醛树脂 | 3.5 | |||||||||||||||
球形熔融石英 | 86.0 | 91.0 | 83.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | |
γ-缩水甘油丙基三甲氧硅烷 | 0.4 | 0.5 | 0.3 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | |||
γ-巯基丙基三甲氧硅烷 | 0.4 | |||||||||||||||
三苯膦 | 0.2 | 0.13 | 0.25 | 0.15 | 0.15 | 0.2 | 0.2 | 0.08 | 0.2 | 0.2 | 0.2 | 0.2 | ||||
DBU | 0.2 | |||||||||||||||
通式(7)的固化促进剂 | 0.25 | |||||||||||||||
通式(8)的固化促进剂 | 0.25 | |||||||||||||||
2,3-二羟基萘 | 0.07 | 0.1 | 0.05 | 0.05 | 0.55 | 0.008 | 0.05 | |||||||||
1,2-二羟基萘 | ||||||||||||||||
儿茶酚 | ||||||||||||||||
焦酚 | ||||||||||||||||
1,6-二羟基萘 | 0.05 | |||||||||||||||
间苯二酚 | 0.05 | |||||||||||||||
巴西棕榈蜡 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | |
碳黑 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | |
螺旋流动度 (cm) | 80 | 63 | 126 | 76 | 71 | 82 | 118 | 114 | 81 | 76 | 78 | 81 | 68 | 89 | 77 | |
固化扭矩比 (%) | 65 | 62 | 65 | 67 | 70 | 62 | 22 | 7 | 65 | 56 | 65 | 64 | 57 | 85 | 89 | |
耐焊性-龟裂 | 芯片分层 | 4 | 芯片暴露 | 0 | 2 | 芯片暴露 | 3 | 脱模性差 | 脱模性差 | 1 | 9 | 5 | 4 | 4 | 2 | 3 |
内部龟裂 | 0 | 2 | 10 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | |||||
阻燃性 | V-0 | V-0 | V-1 | V-1 | HB | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 | V-0 |
Claims (8)
2.权利要求1所述的封装半导体芯片的树脂组合物,其中,所述树脂组合物包含大于或等于0.01wt%的所述化合物(F)。
3.权利要求1所述的封装半导体芯片的树脂组合物,其中,所述树脂组合物中所述硅烷偶联剂(E)的含量为0.01wt%至1wt%。
4.权利要求1所述的封装半导体芯片的树脂组合物,其中,所述化合物(F)包含两个羟基,所述羟基与芳香环上各相邻碳原子结合。
5.权利要求1所述的封装半导体芯片的树脂组合物,其中,所述芳香环是萘环。
6.权利要求5所述的封装半导体芯片的树脂组合物,其中,所述化合物(F)包含两个羟基,所述羟基与所述萘环上各相邻碳原子结合。
7.权利要求1所述的封装半导体芯片的树脂组合物,其中,所述树脂组合物中所述无机填料(C)的含量为84wt%至90wt%。
8.一种半导体装置,其中,半导体芯片是采用权利要求1所述的封装半导体芯片的树脂组合物来进行封装的。
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CN107868404A (zh) * | 2016-09-23 | 2018-04-03 | 住友电木株式会社 | 热固性树脂组合物、树脂密封基板和电子装置 |
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CN106795276B (zh) * | 2014-07-01 | 2019-09-24 | 明和化成株式会社 | 烯丙基醚或烯丙基改性联苯芳烷基酚醛清漆树脂、其制造方法和使用了它的组合物 |
CN107868404A (zh) * | 2016-09-23 | 2018-04-03 | 住友电木株式会社 | 热固性树脂组合物、树脂密封基板和电子装置 |
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