TWI397133B - 壓縮鄰接於半導體工件之封裝材料的系統以及方法 - Google Patents
壓縮鄰接於半導體工件之封裝材料的系統以及方法 Download PDFInfo
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Description
本發明係關於壓縮鄰接於半導體工件之封裝材料的系統以及方法。
許多微電子器件具有一基板、一附接至該基板之微電子晶粒,及一包圍該晶粒之保護覆蓋或封裝材料。保護覆蓋一般係一可模塑以在晶粒上形成一殼體的塑膠或環氧樹脂化合物。微電子晶粒可為一記憶器件、一微處理器、或具有積體電路之另一類型的微電子裝配件。若干類型之封裝器件亦包括係耦合至晶粒的積體電路之基板上的焊墊。焊墊另可耦合至接針或其他類型之端子,其係曝露在連接晶粒至匯流排、電路、及/或其他微電子裝配件之微電子器件的外部上。
當製造封裝微電子器件時之一重要限制性程序係用保護覆蓋囊封晶粒。該等晶粒係應保護避免實體接觸及潛在有害環境條件以避免損壞晶粒的敏感組件。因此,將晶粒囊封之保護殼體應密封該晶粒,避免外部環境且遮蔽晶粒防止電及機械衝擊。因此,保護殼體不應具有任何空洞,其可能允許污染物或其他有害藥劑來接觸及可能損及晶粒。
囊封晶粒之一習知技術係稱為轉移成型,且涉及將晶粒置於一模穴內,而後將一熱固性材料注入穴中。圖1A說明一代表性轉移成型工具10,其同時將複數個微電子晶粒60包圍。更明確言之,成型工具10可包括一可移地定位在一
下板20上的上板30,以定義複數個基板室14。複數個通道16連接基板室14至一垂直球圓筒17。一由環氧樹脂模化合物形成之圓柱球40係定位在圓筒17中,且一柱塞15在圓筒17內向上移動以轉移熱及向球40施加壓力。來自柱塞15之熱及壓力使球40之模化合物液化。液化模化合物流過通道16(如箭頭F指示)且進入基板室14以圍繞微電子晶粒60。隨著液化模化合物流入基板室114,其透過通氣孔18驅出成型工具內的空氣。此係稱為程序之轉移階段。在一其後之壓緊階段期間,壓力係施加在基板室14內之封裝材料上以使可能存在於封裝材料內之微空洞崩潰。接著使基板室14內之模化合物係冷卻及硬化以在各微電子晶粒60周圍形成一保護殼體。
將晶粒囊封之另一習知技術係壓縮成型,其係在圖1B中示意性說明。在一壓縮成型程序期間,晶粒60係置於一下板20上,封裝材料40係置於晶粒60上,且上板30被帶向下朝下板20。上板30及下板20一起形成一基板室14。隨著上板30接觸封裝材料40,其強制封裝材料40圍繞晶粒60。置於晶粒60上之封裝材料40的量典型係稍微超過所需以完全地封裝晶粒60,以致確保完全囊封。因此,過量封裝材料40透過逸出通道19自基板室14逸出。
對於使程序有效率地用於製造微電子器件之持續努力的部分,先前在分割微電子晶粒上執行的許多程序現係在未分割之晶粒上執行,包括此等晶粒的整個晶圓。此等程序典型地稱作晶圓級處理技術。在某些情況下,晶圓級處理
已用來至少依晶圓級將晶粒部分地囊封。然而,現存囊封技術難以在晶圓級實施。例如,晶圓典型包括焊球、絲焊、或連接晶粒至其他器件的其他導電結構。當將一含有此等導電結構之晶圓置於一轉移模內時,晶圓表面上之封裝材料的快速流動可掃過或干擾此等導電結構的位置、形狀及/或方位。壓縮成型程序亦可能遭遇缺點。例如,當封裝材料係佈置在一具有焊球、絲焊或其他小導電結構之晶圓上時,可能在封裝材料及小傳導架構間截獲小氣袋。然而,因為不能完全密封壓縮模(以致允許過量模化合物經由逸出通道19自模穴逸出),故不能將模穴內之封裝材料壓緊以使此等空洞崩潰。因此,因為至少前述原因,故需要改進在微電子器件上形成保護殼體之程序。
本揭示內容之若干具體實施例的特定細節係參考半導體工件及用於處理工件之系統在下文中描述。該等工件可包括微機械組件、資料儲存元件、光學元件、讀/寫組件或其他特徵。例如,該等工件可包括具有晶粒之晶圓,該等晶粒包括SRAM、DRAM(如DDR-SDRAM)、快閃記憶體(如NAND快閃記憶體)、處理器、成像器及其他晶粒。此外,本發明之若干其他具體實施例可具有與在此段落中描述者不同之組態、組件或程序。因此,熟習此項技術人士將理解本發明可具有使用額外元件之其他具體實施例,或本發明可具有無須參考圖2A至8顯示及描述於下之若干元件的其他具體實施例。
一囊封一半導體工件之特定方法包括將工件及封裝材料置於一模穴中,及將一些封裝材料從模穴驅動至一溢流室。該方法可進一步包括經由已施加至溢流室內之封裝材料的壓力,將壓力施加至模穴中之封裝材料。一適用於實行此一方法的代表性裝置包括一限制模穴之模元件,該模穴係定位以收納一半導體工件及一封裝材料。該裝置進一步包括一與模穴流動連通之溢流室。一第一加壓器件係耦合至該模穴。一第二加壓器件係可操作地耦合至溢流室且經由該溢流室耦合至模穴。因此,第一加壓器件可加壓模穴以散佈鄰接於工件之封裝材料及驅動過量封裝材料進入溢流室。第二加壓器件可接著加壓封裝材料,例如以減少或除去微空洞。
圖2A係根據揭示內容之具體實施例處理半導體工件的工具110之部分示意性俯視圖。所說明之工具110包括一具有裝載工件之模穴114的模111。一或多個溢流室121可圍繞在模穴114周邊定位,其與模穴114流動連通中以收納置於模穴114內之一些封裝材料。一模致動器115可相對於另一部分驅動模111之一部分。因此,模111之被驅動部分可操作為以上所述的第一加壓器件。一導引結構112(概要地顯示)可包括一或多個導引元件113,其對準模組件之運動。
圖2B概要地說明圖2A中顯示之工具110的斷面側視圖。如圖2B中顯示,模111包括一第一模元件120及一第二模元件130,而且藉由模元件120、130之一或兩元件至少部分
定義模穴114。第二模元件130係藉由模致動器115予以驅動朝向且遠離第一模元件120,如箭頭A所示。第二模元件130亦裝載溢流室121,其各包括一耦合至一溢流致動器123之溢流活塞122,溢流致動器123如箭頭B所示驅動溢流活塞122。因此,溢流活塞122可操作如以上所述之第二加壓器件。
第一模元件120亦可包括(可選用)對準溢流室121之溢料(flash)容器131。各溢料容器131可包括一耦合至溢料致動器133之溢料活塞132,其如箭頭C指示驅動溢料活塞132。在操作中,半導體工件及封裝材料係置於模穴114內。模致動器115驅動第二模元件130朝向第一模元件120,以散佈封裝材料及強制一些封裝材料進入溢流室121。溢流活塞122接著致動以加壓於溢流室121內之封裝材料,其轉而加壓於模穴114內的封裝材料。視需要,溢流活塞122及溢料活塞132係接著用來分離溢流室121中之溢料與模穴114中的已封裝工件。此程序之進一步細節將會參考圖3至8圖描述於下文。
圖3說明工具110如其係預備用於根據本發明之一具體實施例實行的囊封程序。一第一或下脫模膜125係佈置鄰接於第一模元件120之一第一表面124,且一對應第二或上膜135係佈置鄰接於第二模元件130的一第二表面134。一半導體工件160係定位鄰接於下膜125。為了說明之目的,圖3中所示的半導體工件160係晶圓,(例如)100毫米、200毫米、300毫米或其他尺寸的晶圓。在其他具體實施例中,
半導體工件160可包括從此一晶圓分割之晶粒,或半導體工件160可包括其他半導體結構。
溢流室121及溢料容器131係於囊封程序前封閉。因此,溢流致動器123驅動溢流活塞122,以致其靠向上膜135定位。溢料致動器133驅動溢料活塞132,以致其係靠向下膜125定位。
在圖4中,封裝材料140之一體積已置於模穴114內的半導體工件160上。在工件160係置於模穴114中後,可將封裝材料140置於半導體工件160上,或封裝材料140可在將工件160及封裝材料一起定位在此模穴114前置於半導體工件160上。在任一種配置中,係將足夠量的封裝材料140置於模穴114內,以在工件160上提供所需塗布厚度,加上至少一些過量封裝材料以確保背對第一模元件120之工件160的目標表面(或複數表面)係完全被覆蓋。在一特定具體實施例中,圖4中所示之工件160的面向上表面係該目標表面,且側面及面向下之表面係受下可脫模膜125保護避免曝露至封裝材料140。在其他具體實施例中,亦可將此等表面囊封。第二模元件130係接著移向第一模元件120,如藉由箭頭Al指示。當然,應理解在其他具體實施例中,第一模元件120可被朝第二模元件130驅動,或兩個模元件120、130可朝向彼此驅動。
圖5說明在第二模元件130已朝第一模元件120移至其最遠程度後之工具110,如箭頭A1指示。在此位置中,第二模元件130之運動係藉由一停止器150停止。在圖5所示之
一特定具體實施例中,停止器150包括一藉由第一模元件120實行之第一特徵151,及一藉由第二模元件130實行的第二特徵152。第一及第二特徵151、152彼此接觸及/或接合,以防止第一模元件120及第二模元件130間之進一步相對運動。在所說明的具體實施例中,第一特徵151及第二特徵152分別包括第一模元件120及第二模元件130之平、載送表面,其係分別藉由第一膜125及第二膜135覆蓋。在其他具體實施例中,第一及第二特徵151、152可包括其他結構,及可藉由除了第一模元件120及第二模元件以外130之結構實行。例如,第一及第二特徵151、152之一可藉由導引結構112實行。在任何此等具體實施例中,在模111外部邊緣處之第一及第二膜125、135之部分可壓向彼此,形成一防止封裝材料140排出之密封。
隨著第二模元件130移向第一模元件120,其接觸可流動封裝材料140及在工件160上散佈該封裝材料140。其亦透過流動連通通道或埠116(定位在第二模元件130及第一模元件120間)驅動至少一些封裝材料140向外,及進入溢流室121內。隨著封裝材料140被向外驅動,封裝材料(如工件封裝材料141)之一部分保留在模穴114中,且其他部分(如溢流封裝材料142)進入溢流室121。隨著溢流封裝材料142進入溢流室121,其向上驅動溢流活塞122,如由箭頭B1指示,因而增加溢流室121可存取至封裝材料140之體積。視需要,可驅動溢流致動器123以致協助溢流活塞122的運動。然而,在至少一具體實施例中,溢流致動器123
係脫離或經組態以致不限制溢流活塞122的運動。因此,藉由溢流封裝材料142提供之力量驅動溢流活塞122向上。同時,溢料活塞132可保留在圖5中所示的位置,以致溢流封裝材料142僅進入溢流室121而非溢料室131。
當第一模元件120及第二模元件130間之相對運動係藉由停止器150停止時,第一膜125及第二膜135間之一間距S具有對應於工件160及覆蓋工件封裝材料141之結合厚度的所需值。停止器150係因此配置以重複及一致地維持間距S經過許多循環,因此工件封裝材料141之厚度在不同工件160間維持一致。
當間距S固定時,即使半導體工件160之特徵在不同封裝程序間改變時,亦可使用相同模111。例如,若半導體工件160錯失某些晶粒(如係其中再填入基板的情況),仍可使用相同模111,但針對錯失晶粒考慮而具有額外量的封裝材料140。在另一配置中,可調整間距S(藉由調整停止器150)以適應不同工件160。例如,若工件160包括堆疊晶粒,或為了某些其他原因具有大於或小於一特定"基本"厚度之總厚度,則可調整間距S以適應已改變厚度。
在封裝材料140已散佈在工件160上,且第一及第二模元件120、130之相對運動被制止後,模穴114內之工件封裝材料141被加壓或壓緊。在所說明之具體實施例中,壓緊程序係藉由溢流活塞122執行。溢流活塞122係如由箭頭B2指示向下驅動,其加壓於溢流封裝材料142。經加壓於溢流封裝材料142轉而經由流動通道116加壓於工件封裝材料
141。因為封裝材料140一般係不可壓縮,故溢流活塞122僅極小量移動,而仍在模穴114內產生高壓。模穴114內提升的壓力可減少或除去工件封裝材料141內中的微空洞及/或其他不規則性。在已完成壓緊程序後,封裝材料140(如工件封裝材料141及溢流封裝材料142兩者)會在從模111移除經囊封工件160前冷卻及/或固化或硬化。
圖6說明從經封裝工件160移除溢流封裝材料142,且接著從模111移除經囊封工件160之程序。為了移除溢流封裝材料142,溢流活塞122係向下驅動(如由箭頭B2指示),且溢料活塞132亦係向下驅動或允許在由溢流活塞121提供之力下向下移動,如由箭頭C2指示。此運動自工件封裝材料141中斷溢流封裝材料142(凝固成為溢料143)。在已移除溢料143後,第二模元件130係移離第一模元件120,且經封裝工件160從模穴114移除。
圖7說明用於從經封裝半導體工件160分離溢流封裝材料142之另一配置。在此配置中,模穴114係部分藉由在第一模元件120中裝載之穴活塞126限制。下膜125係因此佈置鄰接於穴活塞126,其係在圖7中之一凹下位置中顯示。在囊封後,模致動器115可將第二模元件130向上移動,如藉由箭頭A2指示,而溢流活塞122向下移動以在固定位置中維持溢流封裝材料142。同時,穴活塞126可如藉由箭頭D2指示向上移動,(如跟隨第二模元件130的動作),因此半導體工件160及工件封裝材料141向上移動成為一單元及從溢流封裝材料142分離。穴活塞126(除了或取代以上描述之
可調整停止器150)亦可用以在囊封前調整此模穴114的體積,以適應具有不同厚度或其他特徵的半導體工件160。
圖8係工件160在模穴114時之一小部分的放大說明,且其係在已壓緊封裝材料140後。如圖8中顯示,工件160可包括一焊球161或其他結構(如導電結構),其自工件160突出。為了說明之目的,圖8中僅顯示一單一焊球161,雖然應理解工件160典型將包括許多焊球161。焊球161可連接至一在工件160中形成之穿透晶圓互連件(TWI),或其可連接至工件160的其他導電特徵。當封裝材料140係初始佈置於工件160上時,一空洞162(如微空洞)亦許存在在於焊球161周圍。隨著第二模元件130被驅動向第一模元件120時,封裝材料140係在工件160表面上展開。在一特定配置中,焊球161自封裝材料140向外突出及當覆蓋封裝材料140展開時壓至上膜135內。在完成囊封程序以後,此配置允許焊球161的至少部分無封裝材料140且可存取用於電耦合至其他結構。一旦停止第二模元件130的運動,壓力係經由溢流活塞l22(圖6)施加至封裝材料140以使空洞162崩潰,因而減少或除去空洞將膨脹及爆裂或破壞封裝工件160完整性的可能性。
在特定具體實施例中,導電結構包括一焊球,如圖8顯示。在其他具體實施例中,導電結構包括其他元件,例如,焊料或其他導電材料凸塊或絲焊。上膜135(及/或下膜125)可自適合撓性材料形成,包括聚四氟乙烯,且可具有一經選定以產生用於導電結構之曝露的所需程度之厚度。
例如,當導電結構包括一在回流前具有約330微米且回流後約277微米之直徑的焊球時,上膜135可具有約200至250微米之厚度(其係比習知脫模膜厚),以致適應該焊球。前述尺寸在其他具體實施例中可具有其他值。
至少一些前述具體實施例之若干特徵可改進囊封程序之效用及/或效率。例如,將封裝材料置於半導體工件上然後壓按該封裝材料以在工件上散佈,比在習知轉移模程序中強制封裝材料散佈於整個工件更不可能破壞焊球或其他結構的完整性。尤其係,當其在工件上壓按及散佈時封裝材料的速度可能明顯較小將封裝材料注入於固定形狀模穴及圍繞工件之速度。此外,其後加壓於封裝材料可比習知.壓縮模程序更有效地減少微空洞或其他不連續性。
至少一些前述具體實施例之另一特徵係在囊封程序期間收納由工件承載之導電結構的部分之穴襯層或膜。此配置可允許導電結構從封裝材料向外突出,不會干擾由封裝材料在工件表面上提供之覆蓋。在將經封裝工件從模移除後,導電結構之部分可因此保持可存取用於電連接至工件。穴襯層亦可保護模表面避免污染物,例如增加模的壽命及/或減少其中模表面必須清潔或維修之頻率。
自前文中,應瞭解,在此已為了說明之目的而描述本發明之特定具體實施例,但可進行各種修正而不脫離本發明。例如,圖式所示之上模係可相對於下模移動,但在其他具體實施例中,下模可相對於上模移動,或兩個模可彼此相對地移動。封裝材料在圖式中係顯示為佈置於半導體
工件上,但在其他具體實施例中,(例如)若封裝材料包括粉末封裝材料,工件可佈置於封裝材料上。工件及模穴可具有除了圖式中顯示及以上描述以外的形狀。取決於包括(但不限於)模穴之尺寸及形狀的特徵,溢流室亦可具有不同尺寸、組態、數目及/或配置。溢流室可定位在第一及第二模部分之一或兩者中。除了活塞以外的器件(如加壓囊)可用來加壓於溢流封裝材料。或者是,此一囊可藉由位於遠離溢流室之活塞來加壓。
在特定具體實施例的背景中所述之本發明某些態樣可在其他具體實施例中結合或免除。例如,以上參考圖1至5描述之封裝程序的特徵可結合參考圖7描述的溢料分離程序。儘管在一撓性襯層材料中的突出結構(如焊球)之收納部分的態樣,係在圖式中顯示之特定成型程序的背景中描述,此技術可應用至其他具體實施例中之其他成型程序,例如習知壓縮模或轉移模程序。此外,儘管與本發明某些具體實施例相關聯之優點已在該等具體實施例的背景中描述,其他具體實施例亦可展現此等優點,且並非所有具體實施例都需要必然地展現此等優點以落入本發明的範圍內。因此,除了隨附申請專利範圍以外,本發明係不受限制。
10‧‧‧轉移成型工具
14‧‧‧基板室
15‧‧‧柱塞
16‧‧‧通道
17‧‧‧垂直球圓筒
18‧‧‧通氣孔
19‧‧‧逸出通道
20‧‧‧下板
30‧‧‧上板
40‧‧‧圓柱球/封裝材料
60‧‧‧微電子晶粒
110‧‧‧工具
111‧‧‧模
112‧‧‧導引結構
113‧‧‧導引元件
114‧‧‧模穴
115‧‧‧模致動器
116‧‧‧流動連通通道/埠
120‧‧‧第一模元件
121‧‧‧溢流室
122‧‧‧溢流活塞
123‧‧‧溢流致動器
124‧‧‧第一表面
125‧‧‧第一/下脫模膜/下膜
126‧‧‧穴活塞
130‧‧‧第二模元件
131‧‧‧溢料容器
132‧‧‧溢料活塞
133‧‧‧溢料致動器
134‧‧‧第二表面
135‧‧‧第二/上膜
140‧‧‧封裝材料
141‧‧‧工件封裝材料
142‧‧‧溢流封裝材料
143‧‧‧溢料
150‧‧‧停止器
151‧‧‧第一特徵
152‧‧‧第二特徵
160‧‧‧半導體工件
161‧‧‧焊球
162‧‧‧空洞
圖1A係使用根據先前技術之轉移模程序囊封微電子器件之成型裝置的部分示意性斷面側視圖。
圖1B係使用根據先前技術之壓縮程序囊封微電子器件之
成型裝置的部分示意性斷面側視圖。
圖2A係根據本發明之具體實施例囊封半導體工件的工具之部分地示意性俯視圖。
圖2B係圖2A中顯示之工具的部分示意性斷面側視圖。
圖3係圖2B中顯示之工具的部分示意性斷面側視圖,其中一半導體工件係定位用於根據本發明之具體實施例囊封。
圖4係圖3中顯示之工具的部分示意性斷面側視圖,其中一封裝材料根據本發明之具體實施例佈置鄰接於該工件。
圖5係圖4中顯示之工具的部分示意性斷面側視圖,其中封裝材料根據本發明之一具體實施例在工件上散佈。
圖6係在封裝材料已根據本發明之具體實施例壓縮且過量封裝材料已移除的工具及工件的部分示意性斷面側視圖。
圖7係一經組態用以根據本發明之另一具體實施例移除過量封裝材料之工具的部分示意性斷面側視圖。
圖8係圖6及7中顯示之工具的經放大、部分示意性斷面側視圖,其顯示一根據本發明之具體實施例崩潰之空洞。
110‧‧‧工具
111‧‧‧模
114‧‧‧模穴
115‧‧‧模致動器
120‧‧‧第一模元件
121‧‧‧溢流室
122‧‧‧溢流活塞
123‧‧‧溢流致動器
124‧‧‧第一表面
125‧‧‧第一/下脫模膜/下膜
130‧‧‧第二模元件
131‧‧‧溢料容器
132‧‧‧溢料活塞
133‧‧‧溢料致動器
134‧‧‧第二表面
135‧‧‧第二/上膜
140‧‧‧封裝材料
160‧‧‧半導體工件
Claims (50)
- 一種囊封一半導體工件之方法,其包含:將一半導體工件及一封裝材料置於一模穴中,該模穴具有一開啟位置及一關閉位置;從該模穴驅動該封裝材料之一些至一溢流室;經由施加至該溢流室中之該封裝材料的壓力,來施加壓力至該模穴中之該封裝材料;及當該模穴在該關閉位置中且加壓該溢流室時,切斷在該模穴中之封裝材料與在該溢流室中之封裝材料。
- 如請求項1之方法,其中在一模穴中置放一半導體工件及一封裝材料包括:將該半導體工件靠近一第一模元件置放,將該封裝材料鄰接於該半導體工件置放;及將該第一模元件及一第二模元件中至少一模元件移向另一模元件,以至少部分封閉該半導體工件及該封裝材料。
- 如請求項2之方法,其中自該模穴驅動該封裝材料之一些進入該溢流室,係藉由將該第一模元件及一第二模元件中至少一模元件移向另一模元件來執行。
- 如請求項1之方法,其中將壓力施加至該模穴中之該封裝材料包括使該封裝材料中的空洞崩潰。
- 如請求項1之方法,其中驅動該封裝材料之一些包括驅動該封裝材料之個別部分進入對應的個別溢流室。
- 一種囊封一半導體工件之方法,其包含:鄰接於一半導體工件佈置一封裝材料;相對於另一模元件移動一第一模元件及一第二模元件 中至少一模元件,該第一模元件及該第二模元件至少部分形成一圍繞該半導體工件之模穴;當該至少一模元件相對於另一模元件移動時,強制來自該模穴之該封裝材料的一些進入一溢流室;加壓於該溢流室,其中加壓於該溢流室包括施加壓力至該模穴內之該封裝材料;及藉由移動相對於該模穴之該溢流室之至少一加壓體積而分離在該溢流室中之封裝材料與在該模穴中之封裝材料。
- 如請求項6之方法,其中強制該封裝材料之一些進入該溢流室包括用該第一模元件或該第二模元件在該封裝材料上施加一力。
- 如請求項6之方法,其進一步包含控制介於該第一模元件與該第二模元件之間的一間距,以針對半導體工件之對應逐次性在逐次封裝循環時使其至少大約相同。
- 如請求項8之方法,其中控制介於該第一表面與該第二表面之間的該間距包括驅動該至少一模元件以接觸一停止器,該停止器係位於相對於該另一模元件之一固定位置處。
- 如請求項6之方法,其進一步包含在一預定位置處停止該至少一模元件相對於該另一模元件的運動。
- 如請求項10之方法,其中停止該至少一模元件的運動包括載送該等模元件彼此靠近。
- 如請求項6之方法,其中移動該至少一模元件包括在該 模穴內散佈該封裝材料。
- 如請求項12之方法,其中散佈該封裝材料包括導引該封裝材料鄰接於自該半導體工件之一表面突出的焊球。
- 如請求項6之方法,其中施加壓力至該模穴中之該封裝材料包括在該溢流室及該模穴間經由一連通埠施加壓力。
- 如請求項6之方法,其中施加壓力包括移動一與該溢流室流體連通中的活塞。
- 如請求項6之方法,其中施加壓力包括在該溢流室內移動一活塞。
- 如請求項16之方法,其中自該模穴強制該封裝材料之一些包括:將該封裝材料壓向該活塞;移動該活塞;及增加由該活塞限制之該溢流室的一體積。
- 如請求項16之方法,其中移動該活塞包括在一第一方向中移動該活塞,且其中該方法進一步包括在一與該第一方向相反之第二方向中移動該活塞,至少直至該活塞將在該溢流室中之該封裝材料與在該模穴中的該封裝材料分離。
- 如請求項18之方法,其進一步包含在將該溢流室中之該封裝材料與該模穴中的該封裝材料分離之前,至少部分地硬化在該溢流室內之該封裝材料。
- 如請求項6之方法,其中藉由在一第一側上之一第一活塞及在一第二側上之一第二活塞限制該溢流室,加壓該溢流室包含強制至少該第一活塞朝向該封裝材料,及其 中分離該溢流室中之封裝材料包含移動至少該第二活塞。
- 如請求項20之方法,其中該第一活塞及該第二活塞係沿著一共同軸而大體對準。
- 如請求項6之方法,其中該模穴具有一般環形形狀,且其中自該模穴強制該封裝材料之一些包括:強制該封裝材料之個別部分進入定位在圍繞該模穴之一周邊的對應溢流室。
- 如請求項6之方法,其中鄰接於一半導體工件佈置一封裝材料包括:鄰接於一般具有多個半導體晶粒之環形半導體晶圓佈置該封裝材料。
- 如請求項6之方法,其中鄰接於一半導體工件佈置一封裝材料包括:鄰接於一經分割半導體晶粒佈置該封裝材料。
- 如請求項6之方法,其進一步包含當該至少一模元件相對於該另一模元件移動時透過該封裝材料驅動藉由該半導體工件承載之焊球,且進入該模穴之一撓性襯層中。
- 如請求項6之方法,其中:該半導體工件包括一般環形的一晶圓;相對於該另一模元件移動該第一模元件及該第二模元件中至少一模元件包括驅動該至少一模元件接觸一停止器,其係位在相對於該另一模元件的一固定位置處;及其中施加壓力至該封裝材料包括在該溢流室中移動一活塞,及使該模穴中之該封裝材料內的穴崩潰。
- 如請求項6之方法,其中移動相對於該模穴之該溢流室包含當該溢流室保持不動時移動該模穴。
- 一種囊封一半導體工件之方法,其包含:將一半導體工件置於一模穴中;將一封裝材料引入該模穴且鄰接於該半導體工件;從該模穴壓按該封裝材料之一溢流部分進入一溢流室;壓按自該工件之一表面突出的導電元件進入一在該模穴之壁處的一撓性材料且離開該封裝材料;當該模穴係在一關閉位置且加壓該溢流室時,藉由移動相對於該模穴之該溢流室而分離在該溢流室中之該溢流部分與在該模穴中之該封裝材料;及從該導電元件移除該撓性材料。
- 如請求項28之方法,其中壓按導電元件包括壓按焊料的體積。
- 如請求項28之方法,其中壓按導電元件包括壓按焊球。
- 如請求項28之方法,其中壓按導電元件包括壓按導電凸塊。
- 如請求項28之方法,其中壓按導電元件包括將導電元件壓入一撓性膜中。
- 如請求項32之方法,其中壓按導電元件包括將導電元件壓入一具有至少200微米之一厚度的撓性膜內。
- 如請求項28之方法,其進一步包含:在封裝後將該半導體工件從該模穴移除;及 在封裝一後續工件之前自該模穴移除該撓性材料。
- 如請求項28之方法,其中壓按導電元件包括將一模之一第一部分相對於該模的一第二部分移動,該模之該第一部分及該第二部分至少部分地限制該模穴。
- 一種囊封一半導體工件之裝置,其包含:一第一模元件;一第二模元件,該第一模元件及該第二模元件至少部分形成一經定位以收納一半導體工件及一封裝材料之模穴,其中在該半導體工件及封裝材料係在該模穴中時,該第一模元件及該第二模元件中至少一模元件可相對於另一模元件移動;一溢流室,其係與該模穴流動連通;及一加壓器件,其係可操作地耦合至該溢流室,且經由該溢流室耦合至該模穴,其中該溢流室與該模穴經組態以藉由移動相對於該模穴之該溢流室之至少一加壓體積而分離在該溢流室中之封裝材料與在該模穴中之封裝材料。
- 如請求項36之裝置,其中該至少一模元件係可在一開啟位置及一關閉位置間相對於該另一模元件移動。
- 如請求項37之裝置,其中當該至少一模元件係在該關閉位置中時,該等模元件彼此接觸。
- 如請求項37之裝置,其進一步包含一停止器,該停止器係定位以停止該至少一模元件在該關閉位置處運動。
- 如請求項39之裝置,其中該停止器係藉由該另一模元件 承載。
- 如請求項39之裝置,其中該第一模元件具有一第一表面,其係定位以承載該半導體工件;且其中該第二模元件具有一第二表面,其面對該第一表面及定位以施加一力至該封裝材料上,其中當該至少一模元件係在該關閉位置時該模穴位於該第一表面與該第二表面之間,且其中該停止器具有一固定位置以停止至少一模元件之運動,其中介於該第一表面與該第二表面之間的一間距對於至該關閉位置之逐次運動係至少大約相等。
- 如請求項37之裝置,其中該第一模元件包括一第一停止特徵,該第二模元件包括一第二停止特徵,且該第一及第二停止特徵係定位以彼此接合,來停止該關閉位置處在介於該第一表面與該第二表面之間的相對運動。
- 如請求項36之裝置,其進一步包含一流動導管,該流動導管耦合該溢流室及該模穴。
- 如請求項36之裝置,其中該加壓器件包括一活塞,其係位於內部且可相對於該溢流室移動。
- 如請求項36之裝置,其中:該模穴經調整尺寸以收納一般環形之一半導體工件,該半導體工件具有多個未分割半導體晶粒;該至少一模元件係可在一開啟位置及一關閉位置間相對於該另一模元件移動,其中當該至少一模元件係在該關閉位置時該等模元件彼此相壓;及該溢流室係複數個溢流室中之一,其中個別溢流室具 有一加壓器件,其包括一位於其內且可相對於該溢流室移動之活塞。
- 一種囊封一半導體工件之裝置,其包含:一模元件,其限制一經定位以收納一半導體工件及一封裝材料之模穴;一溢流室,其與該模穴流動連通;一第一加壓器件,其耦合至該模穴;及一第二加壓器件,其可操作以耦合至該溢流室,及經由該溢流室耦合至該模穴,其中該溢流室與該模穴經組態以藉由移動相對於該模穴之該溢流室之至少一加壓體積而分離在該溢流室中之封裝材料與在該模穴中之封裝材料。
- 如請求項46之裝置,其中該模元件係一第一模元件且其中該第一加壓器件包括一第二模元件,其係可相對於該第一模元件移動。
- 如請求項46之裝置,其中該第二加壓器件包括一往復式活塞,其係位於該溢流室內。
- 如請求項46之裝置,其進一步包含一加內襯於該模穴之可移除撓性膜,該撓性膜具有一至少200微米的厚度。
- 一種囊封一半導體工件之方法,其包含:將一半導體工件及一封裝材料置於一模穴中,該模穴具有一開啟位置及一關閉位置;從該模穴驅動該封裝材料之一些至一溢流室;經由施加至該溢流室中之該封裝材料的壓力,來施加 壓力至該模穴中之該封裝材料;及當維持該溢流室及該模穴之每一者在一固定內部體積時,切斷在該模穴中之封裝材料與在該溢流室中之封裝材料。
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TW200901340A (en) | 2009-01-01 |
WO2008103603A1 (en) | 2008-08-28 |
US7833456B2 (en) | 2010-11-16 |
US20080206930A1 (en) | 2008-08-28 |
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