TWI387412B - Electrical device, connection method and subsequent film - Google Patents

Electrical device, connection method and subsequent film Download PDF

Info

Publication number
TWI387412B
TWI387412B TW097119330A TW97119330A TWI387412B TW I387412 B TWI387412 B TW I387412B TW 097119330 A TW097119330 A TW 097119330A TW 97119330 A TW97119330 A TW 97119330A TW I387412 B TWI387412 B TW I387412B
Authority
TW
Taiwan
Prior art keywords
adhesive layer
unhardened
adhesive
film
connection terminal
Prior art date
Application number
TW097119330A
Other languages
English (en)
Other versions
TW200847866A (en
Inventor
Misao Konishi
Original Assignee
Sony Chem & Inf Device Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Chem & Inf Device Corp filed Critical Sony Chem & Inf Device Corp
Publication of TW200847866A publication Critical patent/TW200847866A/zh
Application granted granted Critical
Publication of TWI387412B publication Critical patent/TWI387412B/zh

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401Structure
    • H01L2224/1403Bump connectors having different sizes, e.g. different diameters, heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141Disposition
    • H01L2224/1412Layout
    • H01L2224/1416Random layout, i.e. layout with no symmetry
    • H01L2224/14164Random layout, i.e. layout with no symmetry covering only portions of the surface to be connected
    • H01L2224/14165Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/27001Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29075Plural core members
    • H01L2224/29078Plural core members being disposed next to each other, e.g. side-to-side arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/2939Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/294Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29499Shape or distribution of the fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/2954Coating
    • H01L2224/29599Material
    • H01L2224/29698Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29798Fillers
    • H01L2224/29799Base material
    • H01L2224/2989Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/325Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50Fixed connections
    • H01R12/51Fixed connections for rigid printed circuits or like structures
    • H01R12/55Fixed connections for rigid printed circuits or like structures characterised by the terminals
    • H01R12/57Fixed connections for rigid printed circuits or like structures characterised by the terminals surface mounting terminals
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09372Pads and lands
    • H05K2201/094Array of pads or lands differing from one another, e.g. in size, pitch, thickness; Using different connections on the pads
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10674Flip chip

Description

電氣裝置、連接方法及接著膜
本發明關於一種電子零件及半導體元件之連接方法。
自以往,為了將如半導體元件之電子零件連接於配線基板上,係一直使用黏合樹脂中分散有導電性粒子的異向導電性接著劑。
若說明用以連接電氣零件與配線基板之步驟一例,則係以配線基板與電氣零件夾持異向導電性接著劑,然後加以擠壓。藉此,以電氣零件之連接端子的前端部分、及配線基板之平台(land)部分夾持導電性粒子,且壓塗黏合樹脂(接著劑),而將電氣零件電連接於配線基板。
當接著劑具有熱硬化性時,在進行上述擠壓時,係進行加熱擠壓,使接著劑熱硬化,而將電氣零件固定於配線基板。以此方式,若使用異向導電性接著劑,則可將電氣零件電連接且機械連接於配線基板上。
近年來,隨著半導體元件之降低成本、細間距化、電氣零件本身之窄框化等,半導體元件之狹長化持續發展,但是當半導體元件為狹長時,由於在使接著劑熱硬化時所發生之應力,會導致半導體元件產生彎曲,半導體元件之長邊方向的兩端部會自基板脫離,而造成位於該兩端部之連接端子導通不良。
本發明係為了解決上述習知技術的不良情形所完成 者,其目的在於提供一種具有高導通可靠度之連接的電氣裝置,且提供該連接方法及使用於該連接方法之接著膜。
為了解決上述課題,本發明提供一種電氣裝置,係藉由硬化接著劑,將配線基板與至少在一面上設置有連接端子之電氣零件加以固定;硬化接著劑具有第1硬化區域、及玻璃轉移溫度低於第1硬化區域的第2硬化區域,第1硬化區域與第2硬化區域係設置在配線基板上不同的位置。
又,本發明提供一種使用於製造上述電氣裝置之接著膜,係將第1未硬化接著劑層、及硬化後之玻璃轉移溫度低於第1未硬化接著劑層的第2未硬化接著劑層設置於帶狀剝離膜上的不同位置。
並且,本發明提供一種使用於製造上述電氣裝置之連接方法,係藉由硬化接著劑層將配線基板、及至少在一面上設置有連接端子之電氣零件加以固定;在配線基板與電氣零件之間的不同位置上,設置第一未硬化接著劑層、及硬化後之玻璃轉移溫度低於第1未硬化接著劑層的第2未硬化接著劑層,使第1及第2之未硬化接著劑層硬化,以將配線基板與電氣零件加以固定。
本發明之電氣裝置,在用以固定電氣零件與配線基板之硬化接著劑的區域,形成有玻璃轉移溫度彼此不同的第1、第2區域。在此,接著劑的硬化物,玻璃轉移溫度越高,則接著強度越高,玻璃轉移溫度越低,則柔軟性越高。因此,根據本發明,可藉由玻璃轉移溫度相對較低的第2 硬化區域,來緩和未硬化接著劑層硬化時的應力。尤其,當電氣零件為狹長時,可藉由將第1硬化區域設置在電氣零件之長邊方向的兩端部,且將玻璃轉移溫度低於第1硬化區域的第2硬化區域設置在電氣零件之長邊方向的中央部分,來緩和在第2硬化區域硬化時的應力,且在第1硬化區域牢固地將電氣零件的兩端部加以固定。故,根據本發明之電氣裝置,可使電氣零件的兩端部不產生剝離,可良好維持在該兩端部的電連接。
並且,於本發明之電氣裝置,當電氣零件具有第1連接端子、及前端部分之面積大於第1連接端子的第2連接端子時,若以導電性粒子含有率高的硬化接著劑層連接第1連接端子,以導電性粒子含有率低的硬化接著劑層連接第2連接端子,則可使第1、第2連接端子的導通可靠度皆獲得提高,且可減低第2連接端子的連接成本。
又,根據本發明之連接方法,可製造本發明之電氣裝置,根據本發明之接著膜,由於在剝離膜上,具有硬化後之玻璃轉移溫度不同的第1及第2未硬化接著劑層,因此本發明之連接方法較為容易。
以下,根據圖式來具體說明本發明。另,在各圖中,相同符號係表示相同或相等的構成要素。
圖1係顯示本發明之接著膜10之一例。此接著膜10具有呈帶狀的剝離膜11、及設置於剝離膜11上的未硬化接著劑層12。
此處,未硬化接著劑層12係由第1、第2未硬化接著劑層15、18所構成,第1、第2未硬化接著劑層15、18,為在硬化物之玻璃轉移溫度彼此不同之熱硬化性黏合樹脂(第1、第2黏合樹脂)16、17分散有導電性粒子19的異向導電性接著劑層。第1黏合樹脂16之硬化物,相對於第2黏合樹脂17之硬化物,較佳為使玻璃轉移溫度高20~60℃,更佳為高30~50℃。
上述硬化物之玻璃轉移溫度不同之熱硬化性黏合樹脂,例如可以官能基之數目彼此不同的環氧樹脂來構成,更具體而言,第1黏合樹脂16係由官能基數目多於第2黏合樹脂17的環氧樹脂所構成。環氧樹脂的官能基數目越多,則聚合時的玻璃轉移溫度越高,因此第1未硬化接著劑層15硬化後之第1硬化區域15a的玻璃轉移溫度,將高於第2未硬化接著劑層18硬化後之第2硬化區域18a的玻璃轉移溫度。
第1、第2黏合樹脂16、17所使用之熱硬化性樹脂並不限定於環氧樹脂,亦可使用三聚氰胺樹脂、酚樹脂、尿素樹脂等各種熱硬化性樹脂,亦可單獨或混合兩種以上此等之樹脂來構成第1、第2黏合樹脂16、17。
又,第1、第2黏合樹脂16、17所使用之樹脂並非限定於以熱硬化性樹脂為主成分者,亦可為在熱硬化性樹脂中添加有熱可塑性樹脂等其他樹脂者,又,亦可使用以光硬化性樹脂(係藉由紫外線、可見光等之光照射使其硬化)為主成分者。
又,為了形成玻璃轉移溫度彼此不同的第1、第2硬化區域,亦可藉由改變導電性粒子之含量及種類、以及抗老化劑、著色劑、軟化劑等添加劑之添加量及種類,將第1、第2未硬化接著劑層15、18之硬化後的玻璃轉移溫度設定成彼此不同,來代替使用硬化後之玻璃轉移溫度不同之第1、第2黏合樹脂16、17。
另一方面,導電性粒子19,可使其含有單獨一種或兩種以上之金屬粒子、或在樹脂粒子表面形成有金屬被膜層者等。第1、第2未硬化接著劑層15、18所含有之導電性粒子的種類可彼此相同或不同,又,第1、第2未硬化接著劑層15、18所含有之導電性粒子的含有率亦可彼此相同或不同。
又,在剝離膜11上所形成之第1、第2未硬化接著劑層15、18的膜厚,雖然未分別加以限定,但是為了能以接著膜10確實將欲連接於配線基板20之電氣零件25加以固定在配線基板20,較佳在10μm以上40μm以下。
第1、第2未硬化接著劑層15、18,係分別沿著剝離膜11的長邊方向,形成為細帶狀。第2未硬化接著劑層18的寬度L2小於剝離膜11的寬度,第2未硬化接著劑層18係設置在剝離膜11之寬度方向的兩端部間,較佳為設置在中央位置,第1未硬化接著劑層15則設置在剝離膜11上的兩端部。第1、第2未硬化接著劑層15、18,係設置成彼此不重疊,且亦無空出間隙(圖3)
此接著膜10,係被捲繞成滾筒狀,如圖2所示,接著 膜10之滾筒2被安裝在捲軸7,一端係自滾筒2送出,在未硬化接著劑層12之形成面朝向壓著台4的狀態下,通過擠壓滾輪3與壓著台4之間而捲繞於捲軸8。
另一方面,圖4(a)的符號20表示配線基板。在配線基板20之基板本體21的表面上具有配線,該配線的一部分係形成在平台部分22。又,於圖3中,以虛線所圍成之區域28,為包含配線基板20之平台部分22的區域,在將後述之電氣零件的各連接端子加以連接於所對應之平台部分22時,表示電氣零件之連接面所接觸的固定區域。因此,固定區域28的形狀,具有與電氣零件之連接面相同大小且相同的形狀。因此,電氣零件25的連接面呈細長的長方形時,固定區域28亦為細長的長方形。
又,圖4(c)之符號25,係表示連接於配線基板20的電氣零件。此電氣零件25為半導體元件,具有細長的零件本體26、及設置於零件本體26之細長面的複數個連接端子27。
另,於本發明中,電氣零件並不限定於半導體元件,亦可使用各種物品。又,一電氣零件上設置有複數個連接端子之連接區域的數目,可為1個或複數個,因此在一電氣裝置中,電氣零件與配線基板之連接區域的個數可為1個或複數個。
使用接著膜10,將配線基板20之平台部分22與電氣零件25之連接端子27加以連接的方法,如圖2所示,係在擠壓滾輪3不與壓著台4接觸的狀態下,使平台部分22 側之面朝向擠壓滾輪3側,將配線基板20設置在壓著台4上。此時,使固定區域28之長邊方向p與配線基板20上之接著膜10的移動方向大致正交,較佳為,使未硬化接著劑層12之寬度方向的中心通過固定區域28之長邊方向P的中心。
接著,移動接著膜10,將未硬化接著劑層12設置在固定區域28上,以擠壓滾輪3使接著膜10壓接於配線基板20。相對於配線基板20之固定區域28之長邊方向p的長度Lp,接著膜10之未硬化接著劑層12的寬度L0由於較寬,因此,未硬化接著劑層12會與固定區域28自該長邊方向p之兩端部密合於既定量外側的區域。
並且,移動擠壓滾輪3使其擠壓於較固定區域28之長度Lq寬的區域。藉此,未硬化接著劑層12亦會自固定區域28之寬度方向q的兩端部密合於既定量外側的區域,最後,未硬化接著劑層12會與固定區域28自固定區域28的周圍接著於僅為既定量寬的區域。
圖3,係顯示在配線基板20上接著有未硬化接著劑層12之狀態的立體圖,圖4為圖3之A-A切線剖面圖。如上所述,第2未硬化接著劑層18係位於剝離膜11之寬度方向的兩端部間,第2未硬化接著劑層18的寬度L2由於較固定區域28的長度Lq短,因此,第2未硬化接著劑層18會接著於自固定區域28之長邊方向p的兩端部較靠內側的區域。
又,第1未硬化接著劑層15係位於未硬化接著劑層12 之寬度方向的兩端部,未硬化接著劑層12的寬度L0由於較固定區域28的長度Lq長,因此,第1未硬化接著劑層15會與固定區域28之兩端部自該兩端部接著於僅為既定距離之外側的區域。
以此方式,將未硬化接著劑層12接著於配線基板20之固定區域28上之後,以切斷機構9將第1、第2未硬化接著劑層15、18密合於配線基板20的部分自其他部分加以分離,然後使擠壓滾輪3遠離壓合台4,以去除剝離膜11上的負重。由於係使第1、第2未硬化接著劑層15、18與剝離膜11之間的接著力小於第1、第2未硬化接著劑層15、18與配線基板20之間的接著力,因此,第1、第2未硬化接著劑層15、18接著於配線基板20之部分會自剝離膜11剝離,而轉附於配線基板20上。
又,使圖4之電氣零件25設置有連接端子27之面朝向第1、第2未硬化接著劑層15、18,以各連接端子27與所對應之平台部分22相對向的方式,將電氣零件25設置在固定區域28上。
固定區域28之長邊方向的長度Lp與電氣零件25之長邊方向的長度相等,因此藉由上述之設置,電氣零件25,其長邊方向的中央部分係位於第2未硬化接著劑層18之寬度方向的中央部分,電氣零件25之長邊方向的兩端部則分別接觸於第1未硬化接著劑層15,其兩端部之間與第2未硬化接著劑層18接觸。
然後,在此狀態下,對電氣零件25進行加熱擠壓。若 使第1、第2未硬化接著劑層15、18升溫,則第1、第2黏合樹脂16、17將會軟化,使第1、第2未硬化接著劑層15、18產生流動性。並且,若持續進行加熱擠壓,則第1、第2未硬化接著劑層15、18將會因連接端子27受到壓塗,使連接端子27與平台部分22夾持導電性粒子19而電連接。
此時,第1、第2未硬化接著劑層15、18,將會溢出至連接端子27與平台部分22所連接之連接部分的周圍,第1未硬化接著劑層15,將會在電氣零件25之長邊方向的兩端部填滿零件本體26與基板本體21之間隙,而第2未硬化接著劑層18,則會在其兩端部之間的位置,填滿零件本體26與基板本體21之間隙。
第1、第2黏合樹脂16、17具有熱硬化性,若持續進行加熱擠壓,則將會使第1、第2黏合樹脂16、17的聚合反應進行。因此,第1、第2未硬化接著劑層15、18,將會在電氣零件25之長邊方向兩端部與其間的位置,在填滿基板本體21與零件本體26之間隙的狀態下硬化,將基板本體21與零件本體26加以固定。以此方式得到電氣裝置1(圖4(d))。
圖4(d)的符號12,係顯示未硬化接著劑層12硬化後之硬化接著劑。第1未硬化接著劑層15在電氣零件25之長邊方向兩端部,第2未硬化接著劑層18則在該等之間的位置上,於密合於配線基板20與電氣零件25的狀態下硬化,因此,第1未硬化接著劑層15硬化後之第1硬 化區域15a,將會在電氣零件25之長邊方向兩端部密合於電氣零件25與配線基板20,而將此等加以固定,第2未硬化接著劑層18硬化後之第1硬化區域18a,則會在其兩端部之間密合於電氣零件25與配線基板20,而將此等加以固定。
另一方面,一般而言,接著劑之硬化物其玻璃轉移溫度越高,則越硬,玻璃轉移溫度越低,則越具有高柔軟性的傾向。因此,配線基板20與電氣零件25,在電氣零件25之長邊方向的兩端部係以硬化接著劑層12a之較硬的區域(第1硬化區域15a)固定,而在其兩端部之間則是以硬化接著劑12a之較柔軟的區域(第2硬化區域18a)固定。
因此,第1、第2未硬化接著劑層15、18硬化時的應力,將會被較柔軟的第2硬化區域18a所吸收,且即使因殘留應力造成電氣零件25產生彎曲,由於電氣零件25之長邊方向的兩端部係以第1硬化區域15a牢固地固定著,因此其兩端部難以從配線基板20剝離。
並且,在電氣零件25之長邊方向的兩端部,連接連接端子27與平台部分22之連接部分14由於以較硬之第1硬化區域15a固定著,因此連接端子27不會自平台部分22分離,而不會發生導通不良。因此,本發明之電氣裝置1的導通可靠度高。
以上,雖說明使用第1未硬化接著劑層15設置在剝離膜11之寬度方向之兩端部,且將第2未硬化接著劑層18 設置在其兩端部之間的接著膜10,以將配線基板20與電氣零件25加以連接的方法,但是本發明並不限定於此,例如,亦可如圖5所示之接著膜10b,使用將第1、第2未硬化接著劑層15b、18b交互排列在剝離膜11之長邊方向者。
於圖5中,第1、第2未硬化接著劑層15b、18b分別與圖1之第1、第2未硬化接著劑層15、18相同,係由硬化物之玻璃轉移溫度不同的接著劑所形成。
未硬化接著劑層12b的寬度L0b係長於上述長方形之固定區域28之短邊的長度Lq。又,未硬化接著劑層12b,係將僅較固定區域28之長邊的長度Lp長既定距離的距離,作為由第1、第2未硬化接著劑層15b、18b所構成之連接單位29b,並將該連接單位配置排列於剝離膜的長邊方向。具體而言,將第1、第2未硬化接著劑層交互地設置在剝離膜的長邊方向,使從一個第1未硬化接著劑層15b的中央部至該相鄰之第1未硬化接著劑層15b的中央部皆為連接單位29b。因此,此連接單位29b,第1未硬化接著劑層15b係位於該長邊方向的兩端部,而第2未硬化接著劑層18b則是位於其間。
因此,若是將此一個連接單位29b設置於固定區域28上時,則如圖5所示,固定區域28與其周圍之既定量的區域將會被一個連接單位29b所覆蓋。
接著,說明使用此接著膜10b將上述之配線基板20與電氣零件25加以連接的步驟。
將配線基板20設置在壓合台4上,使固定區域28的長邊與接著膜10b的長邊方向平行,使接著膜10b在配線基板20上沿著接著膜10b的長邊方向移動,到達一個連接單位29b覆蓋固定區域28上的位置後,以擠壓滾輪3將接著膜10b壓接於配線基板20。藉此加以接著成使固定區域28與其周圍之既定區域的範圍覆蓋連接單位29b。
於連接單位29b內,固定區域28之長邊的長度,係長於接著膜10b之長邊方向的第2未硬化接著劑層18b的長度,且短於連接單位29b之接著膜10b的長邊方向的長度。 又,連接單位29b中,在第2未硬化接著劑層18b之長邊方向的兩端部設置有第1未硬化接著劑層15b。因此,若以連接單位29b覆蓋固定區域28,則第1未硬化接著劑層15b將會接著於固定區域28之長邊方向p的兩端部,第2未硬化接著劑層18b則會接著於該兩端部之間的位置。
接著,以切斷機構9將接著於配線基板20之連接單位29b自未硬化接著劑層12b的其他部分分離,以將剝離膜11加以剝離。藉此,將連接單位29b自剝離膜11加以剝離,而轉附於配線基板20。
然後,在轉附於配線基板20之連接單位29上,設置電氣零件25使該連接面位於固定區域28的正上方,連接端子27與所對應之平台部分22相對象。
電氣零件25之平面形狀由於具有與電氣零件之連接面相同大小且相同的形狀,因此使電氣零件25之連接端子27位於所對應之平台部分22上,若將電氣零件25在固定區 域28之正上方的位置載置於連接單位29b上時,則電氣零件25之長邊方向兩端部將會密合於第1未硬化接著劑層15b,該兩端部之間則會密合於第2未硬化接著劑層18b。
又,在此狀態下進行加熱擠壓。藉此,使電氣零件25之長邊方向的兩端部與配線基板20在第1未硬化接著劑層15b硬化後的第1硬化區域固定,而其兩端部之間則在第2未硬化接著劑層18b硬化後的第2硬化區域固定。
在此接著膜10b中,由於第1硬化區域的玻璃轉移溫度亦是高於第2硬化區域的玻璃轉移溫度,因此電氣零件25之長邊方向的兩端部係以較硬的樹脂牢固地加以固定,該兩端部之間的部分則是以較柔軟的樹脂來加以固定,以緩和硬化時的應力。因此,可得到彎曲量小且導通可靠度高的電氣裝置。
於本發明之接著膜中,第1、第2未硬化接著劑層的配置排列態樣,如圖6所示之接著膜10e,可在一個連接單位29e設置除了第1、第2未硬化接著劑層15e、18e之外的第3未硬化接著劑層19e。此未硬化接著劑層19e,例如,可為使其黏合樹脂不同於第1、第2未硬化接著劑層之黏合樹脂,藉此使硬化物的玻璃轉移溫度低於第2未硬化接著劑層18e。
並且,於本發明之連接方法中,亦可將第1、第2未硬化接著劑層15、18設置於不同的剝離膜11上,然後將形成有第1、第2未硬化接著劑層15、18的剝離膜11分 別移動於配線基板20上,使第1、第2未硬化接著劑層15、18從不同的剝離膜11上轉附於相同的配線基板20。
又,將第1、第2未硬化接著劑層15、18設置於配線基板20上的方法,例如可準備糊狀之第1、第2未硬化接著劑,將第1未硬化接著劑塗布在配線基板20上欲連接電氣零件25之長邊方向兩端部的位置,第2未硬化接著劑則塗布於該兩端部之間,分別形成第1、第2未硬化接著劑層15、18。
又,亦可將第1未硬化接著劑層15設置在電氣零件25之長邊方向兩端部上,且將第2未硬化接著劑層18設置在電氣零件25該兩端部之間後,使配線基板20密合於第1、第2未硬化接著劑層15、18。
於本發明中,視需要,亦可在接著膜之未硬化接著劑層(異向導電性接著劑層)設置導電性粒子含有率不同之區域的區域。
圖7(a)、(b)之符號50,係顯示此種接著膜厚,圖7(b)為圖7(a)之B-B切線剖面圖。此接著膜50具有帶狀之剝離膜51、及設置在剝離膜51上且分散有導電性粒子59之未硬化接著劑層52。
未硬化接著劑層52,以其黏合劑之硬化物的玻璃轉移溫度,而可區分為第1未硬化接著劑層56、與玻璃轉移溫度低於第1未硬化接著劑層的第2未硬化接著劑層57,並且以導電性粒子59的含有率,而可區分為第1接著部55、與導電性粒子59之含有率低於第1接著部55的第2接著 部58。
此接著膜50,例如,可適用於連接圖8所示之電機零件65及圖9(a)所示之配線基板60時。
亦即,圖8之電氣零件65具有細長之零件本體66、及設於零件本體66之一面的第1、第2連接端子67、68。第1連接端子67之前端部分53的面積小於第2連接端子68之前端部分54的面積。第1連接端子67與第2連接端子68分別配置排列成直線狀,且第1連接端子的配置排列間距小於第2連接端子68的配置排列間距。
另一方面,圖9(a)之配線基板60具有基板本體61、及設置在基板本體61之一面的第1、第2平台部分63、64。此第1、第2平台部分63、64係設置在與上述電機零件65之第1、第2連接端子67、68對應的位置。因此,第1平台部分63之表面積小於第2平台部分64的表面積。又,第1、第2平台部分63、64分別配置排列成直線狀,且第1平台部分63的配置排列間距小於第2平台部分64的配置排列間距。
又,為了將配線基板60連接於電氣零件65,首先,將配線基板60設置於壓合台4,使第1、第2平台部分63、64的配置排列方向與接著膜50的移動方向平行,然後沿著配線基板60的長邊方向移動接著膜50。藉此,將接著膜50的第1未硬化接著劑層56設置在配線基板60之長邊方向的兩端部,將第2未硬化接著劑層57設置在此兩端部之間,又,在配線基板60之第1、第2平台部分63、 64的配置上,設置接著膜50之第1、第2接著部55、58。然後,將接著膜50壓著於配線基板60,將未硬化接著劑層52接著於配線基板60,再以切斷機構9將該未硬化接著劑層52之接著部分自其他部分分離,將剝離膜51加以剝離,而如圖9所示,將未硬化接著劑層52轉附於配線基板60。
接著,在將電氣零件65設置有第1、第2連接端子67、68之面朝向配線基板60側的狀態下,將電氣零件65設置在配線基板60上,而使第1、第2連接端子67、68與第1、第2平台部分63、64相對向。
於是,將電氣零件65置於未硬化接著劑層52上,使第1連接端子67的前端部分53密合於第1未硬化接著劑層56的第1接著部55,使第2連接端子68的前端部分54密合於第2未硬化接著劑層57的第2接著部58,在此狀態下,對電氣零件65進行加熱擠壓。
藉此,圖9(c)所示,使連接端子之前端面積小的第1連接端子67與第1接著部55的導電性粒子59接觸,連接端子之前端面積大的第2連接端子68與第2接著部58的導電性粒子59接觸。
此處,當導電性粒子59的含有率為均一時,導電性粒子59接觸於第1連接端子67的機率雖然因連接面積小而降低,但是第1接著部55之導電性粒子59的含有率,由於較第2接著部58之導電性粒子59的含有率高,因此,不僅第2連接端子68,第1連接端子67亦是確實地與導 電性粒子59接觸。
並且,若持續進行加熱擠壓,則第1、第2連接端子67、68將會被壓著於第1、第2平台部分63、64,接觸於各前端部分53、54的導電性粒子59將會呈被夾持在第1、第2連接端子67、68與第1、第2平台部分63、64的狀態。
在此狀態下,未硬化接著劑層56、57的聚合反應將會進行,而在第1、第2接著部55、58圍繞第1、第2連接端子67、68與第1、第2平台部分63、64之周圍的狀態下硬化。
藉此,如圖10及其C-C剖面之圖9(c)所示,可得到電氣零件65之兩端部的第1、第2連接端子67、68在第1硬化區域56a被牢固地固定,且該等之間在第2硬化區域57a硬化時之應力已受到緩和之狀態被固定的電氣裝置40。
以此方法所得到之電氣裝置40,具有極高的導通可靠度。
又,雖然若提高未硬化接著劑層52全體之導電性粒子59的含有率則會使成本提高,但是第2接著部58之導電性粒子59的含有率越低,未硬化接著劑層52全體之導電性粒子59的含有率就越低,因此可使製造成本降低。
另,於圖10中,符號43,係顯示連接第1連接端子67與第1平台部分63之第1連接部分41所在的第1連接區域,符號44則是顯示連接第2連接端子68與第2平台部分64之第2連接部分42所在的第2連接區域。
於此電氣裝置40中,例如,配線基板60之電氣訊號,係從連接面積較大的第2連接部分42進入電氣零件25,該電氣訊號以電氣零件25進行處理後,則從連接面積較小的第1連接部分41輸出至配線基板60。
於本發明之接著膜50中,導電性粒子之含有率彼此不同的第1、第2接著部55、58的設置,並不限於上述之例,例如,亦可如圖11所示之接著膜70般來設置。
圖11(a)係顯示接著膜70之平面圖,圖11(b)則顯示圖11(a)之D-D切線剖面圖。此接著膜70具有帶狀之剝離膜71、及設於剝離膜71表面的未硬化接著劑層72。
未硬化接著劑層72,從硬化後之玻璃轉移溫度的觀點,帶狀剝離膜71之寬度方向的兩端部為第1未硬化接著劑層76,此兩端部之間則是硬化後之玻璃轉移溫度低於第1未硬化接著劑層76的第2未硬化接著劑層77。
又,未硬化接著劑層72,從異向導電性粒子之含有率的觀點,於帶狀接著膜70的長邊方向,交互地重複第1接著部75與第2接著部78,第1接著部75之異向導電性粒子之含有率高於第2接著部78。
圖11(a)之虛線,係顯示可使用此接著膜70較佳地進行接合之電氣零件65的連接面大小。此電氣零件65,如圖8所示,係前端部分之面積較小的第1連接端子67、及前端部分之面積較大的第2連接端子68分別配置排列成直線狀者。如圖11(a)所示,接著膜70的寬度,稍微長於電氣零件65之連接面之長邊的長度,而第1、第2接 著部75、78的反覆間距,亦稍微長於電氣零件65之連接面之短邊的長度,且以第1、第2接著部75、78構成連接單位79。
因此,若使用接著膜70將電氣零件65與配線基板加以連接時,則可使電氣零件65之長邊方向的兩端部在玻璃轉移溫度較高的第1硬化區域被牢固地連接,而該兩端部之間則是在玻璃轉移溫度較低的第2硬化區域硬化時之應力已受到緩和的狀態連接,且可以導電性粒子之含有率較高的第1接著部75來確實連接前端部分之面積較小的第1連接端子67,並可抑制成本以導電性粒子之含有率較低的第2接著部78來確實連接前端部分之面積較大的第2連接端子68。
本發明之接著膜,第1、第2接著部55、58的設置亦無特別限制,例如,可視待接著之電氣零件65的形狀、端子配置排列等,如圖12所示之接著膜70b,於接著膜70b的長邊方向上,交互設置玻璃轉移溫度相對較高的第1未硬化接著劑層15d、及玻璃轉移溫度低於第1未硬化接著劑層15d的第2未硬化接著劑層18d,且亦可根據異向導電性粒子的含有率,將各第1、第2未硬化接著劑層15d、18d區分為第1接著部75、及導電性粒子之含有率小於第1接著部75的第2接著部78。
又,亦可如圖13所示之電氣裝置80,在四邊形之電氣零件65以對角線分半的區域,分別設置導電性粒子含有率高的第1接著部85、及導電性粒子含有率低的第2接 著部88,以作為接著膜之未硬化接著劑層82b,形成連接前端面積較小之連接端子與平台部分的第1連接區域43b、及連接前端面積較大之連接端子與平台部分的第2連接區域44b,藉此,將電氣零件65b連接於配線基板60b。此時,電氣零件65之長邊方向的兩端部亦是被固定在玻璃轉移溫度較高的第1硬化區域,而其兩端部之間亦是被固定在玻璃轉移溫度較低的第2硬化區域。
於本發明中,亦可以導電性粒子含有率不同之3個以上的接著部分來構成未硬化接著劑層,又,如連接端子為焊料凸塊之情形,當期待藉由加熱擠壓以金屬結合連接端子與平台部分時,亦可以導電性粒子之含有率為零的接著部分來構成未硬化接著劑層的一部份或全部。
並且,於本發明中,無論有沒有在未硬化接著劑層設置導電性粒子含有率不同的部分,玻璃轉移溫度不同的硬化區域可在配線基板上互相重疊。
例如,圖14之電氣裝置1f的硬化接著劑層12f,除了玻璃轉移溫度彼此不同之第1、第2硬化區域15f、18f之外,亦具有與第1、第2硬化區域15f、18f為不同種類之接著劑硬化後的第3硬化區域13f,第3硬化區域13f係設置在第1、第2硬化區域15f、18f之電氣零件25側之面上,密合於電氣零件25之零件本體26。
由於將第3硬化區域13f的膜厚形成為較薄,因此連接端子27之前端部分突出於第3硬化區域13f,故連接端子27之前端部分會被第1、第2硬化區域15f、18f加以 固定。以此方式藉由設置第3硬化區域13f,可防止在進行加熱擠壓時,第1、第2硬化區域15f、18f混合過度而造成玻璃轉移溫度的差異變小。
<實施例1>
將導電性粒子分散在環氧樹脂及硬化劑中,製成第1接著劑。又,將硬化劑加入與第1接著劑不同種類的環氧樹脂中,並分散與第1接著劑相同種類的導電性粒子,使導電性粒子的含有量(重量%)與第1接著劑相同,製成第2接著劑。
對第1、第2接著劑進行加熱使其完全硬化,測得其硬化物的玻璃轉移溫度,第1接著劑之硬化物的玻璃轉移溫度為170℃,第2接著劑的玻璃轉移溫度為130℃。
使用此等之第1、第2接著劑,如圖4(c)所示,將第1、第2未硬化接著劑層15、18設置在電氣零件25與配線基板20之間,如上述之,進行加熱擠壓,製得實施例1之電氣裝置1。使用此實施例1之電氣裝置1進行以下測試。
[彎曲] 在電氣零件25側之面朝向下側的狀態下,將電氣裝置1置於水平盤,使電氣零件25之長邊方向的兩端部密合於水平盤表面,在電氣零件25自水平盤分離的部分中,令距水平盤最遠之部分的距離為彎曲量。
[導通電阻] 測得位於電氣裝置1之電氣零件25長邊方向端部位置 之連接部分14的電阻值。電阻值越低,導通可靠度越高。
[耐久性] 在85℃、相對濕度85%的條件下,將電氣裝置1放置1000小時後,觀察電氣零件25是否自硬化接著劑層12a產生剝離。將上述試驗之結果記載於下列表1。
<比較例1>
僅將上述實施例1之第1接著劑的未硬化接著劑層設置於電氣零件25之長邊方向的兩端部與中央部分兩方,進行加熱擠壓,製得比較例1之電氣裝置。
<比較例2>
僅將上述實施例1之第2接著劑的未硬化接著劑層設置於電氣零件25之長邊方向的兩端部與中央部分兩方,進行加熱擠壓,製得比較例2之電氣裝置。
使用比較例1、2之電氣裝置,進行上述「彎曲」、「導通電阻」、「耐久性」之各評價試驗。將各評價試驗之結果記載於上述表1。從上述表1可知,僅使用硬化物之剝離轉移溫度高的第1接著劑的比較例1彎曲大,觀察到電 氣零件有產生剝離。而僅使用硬化物之玻璃轉移溫度低的第2接著劑的比較例2、及使用第1、第2接著劑的實施例1,由於因第2接著劑應力受到緩和,故彎曲量小,電氣零件並無產生剝離。然而,實施例1中導通電阻值亦較低,相對於此,由於比較例2用以固定電氣零件之長邊方向端部之連接部分的硬化接著劑層強度較低,因此,導通電阻值變高。
從以上可知,若將硬化後之玻璃轉移溫度高的接著劑設置於電氣零件之長邊方向的兩端部,且將硬化後之玻璃轉移溫度低的接著劑設置於該兩端部之間,來將電氣零件連接於配線基板,則可得到彎曲量小,且導通可靠度高的電氣裝置1。
[產業利用性]
本發明之連接膜、連接方法及電氣裝置,適用於需同時進行電連接與機械連接之各種電氣裝置。
1,1f‧‧‧電氣裝置
10,10b‧‧‧接著膜
11‧‧‧剝離膜
12‧‧‧未硬化接著劑層
12a‧‧‧硬化接著劑層
12f‧‧‧硬化接著劑層
13f‧‧‧第3硬化區域
14‧‧‧連接部分
15,15d,15e‧‧‧第1未硬化接著劑層
15a,15f‧‧‧第1硬化區域
16‧‧‧第1黏合樹脂
17‧‧‧第2黏合樹脂
18,18d,18e‧‧‧第2未硬化接著劑層
18a,18f‧‧‧第2硬化區域
19‧‧‧導電性粒子
19e‧‧‧第3未硬化接著劑層
20‧‧‧配線基板
21‧‧‧基板本體
22‧‧‧平台部分
25‧‧‧電氣零件
26‧‧‧零件本體
27‧‧‧連接端子
28‧‧‧固定區域
29,29b,29e‧‧‧連接單位
40‧‧‧電氣裝置
41‧‧‧第1連接部分
42‧‧‧第2連接部分
43,43b‧‧‧第1連接區域
44,44b‧‧‧第2連接區域
50‧‧‧接著膜
51‧‧‧剝離膜
52‧‧‧未硬化接著劑層
52a‧‧‧硬化接著劑層
55‧‧‧第1接著部
56‧‧‧第1未硬化接著劑層
56a‧‧‧第1硬化區域
57‧‧‧第2未硬化接著劑層
57a‧‧‧第2硬化區域
58‧‧‧第2接著部
59‧‧‧導電性粒子
60,60b‧‧‧配線基板
61‧‧‧基板本體
63‧‧‧第1平台部分
64‧‧‧第2平台部分
65,65b‧‧‧電氣零件
66‧‧‧零件本體
67‧‧‧第1連接端子
68‧‧‧第2連接端子
70,70b‧‧‧接著膜
71‧‧‧剝離膜
72‧‧‧未硬化接著劑層
75‧‧‧第1接著部
76‧‧‧第1未硬化接著劑層
77‧‧‧第2未硬化接著劑層
78‧‧‧第2接著部
79‧‧‧連接單位
80‧‧‧電氣裝置
85‧‧‧第1接著部
88‧‧‧第2接著部
圖1,係用以說明本發明所使用之接著膜之剖面圖。
圖2,係說明用以將未硬化接著劑層轉附於配線基板之步驟。
圖3,係顯示壓接於配線基板之接著膜之立體圖。
圖4(a)~(d),係說明藉由本發明將配線基板與電氣零件加以連接之步驟。
圖5,係說明本發明之接著膜之俯視圖。
圖6,係說明本發明之接著膜之俯視圖。
圖7(a),(b),係說明本發明之接著膜之俯視圖及該剖面圖。
圖8,係說明本發明所使用之電氣零件之俯視圖。
圖9(a)~(c),係說明藉由本發明,將配線基板與電氣零件加以連接之步驟的剖面圖。
圖10,係說明本發明之電氣裝置之俯視圖。
圖11(a),(b),係分別用以說明本發明之接著膜之俯視圖及剖面圖。
圖12,係說明本發明之接著膜之俯視圖。
圖13,係說明本發明之電氣裝置之俯視圖。
圖14,係說明本發明之電氣裝置之剖面圖。
1‧‧‧電氣裝置
10‧‧‧接著膜
11‧‧‧剝離膜
12‧‧‧未硬化接著劑層
12a‧‧‧硬化接著劑層
14‧‧‧連接部分
15‧‧‧第1未硬化接著劑層
15a‧‧‧第1硬化區域
16‧‧‧第1黏合樹脂
17‧‧‧第2黏合樹脂
18‧‧‧第2未硬化接著劑層
18a‧‧‧第2硬化區域
19‧‧‧導電性粒子
20‧‧‧配線基板
21‧‧‧基板本體
22‧‧‧平台部分
25‧‧‧電氣零件
26‧‧‧零件本體
27‧‧‧連接端子

Claims (11)

  1. 一種電氣裝置,係藉由硬化接著劑,將配線基板與至少在一面上設置有連接端子之電氣零件加以固定所得者;硬化接著劑具有第1硬化區域、及玻璃轉移溫度低於第1硬化區域的第2硬化區域,第1硬化區域與第2硬化區域係設置在配線基板上不同的位置,在第1及/或第2硬化區域分散有導電性粒子,透過導電性粒子將配線基板之平台部分與電氣零件之連接端子加以電連接,電氣零件之連接端子,具有第1連接端子、及前端部分之面積大於第1連接端子的第2連接端子,用以電連接第1連接端子之導電性粒子的含有率高於用以電連接第2連接端子之導電性粒子的含有率。
  2. 如申請專利範圍第1項之電氣裝置,其中,係以第1硬化區域將電氣零件之長邊方向的兩端部加以固定,該兩端部之間則以第2硬化區域加以固定。
  3. 如申請專利範圍第1或2項之電氣裝置,其中,位於電氣零件長邊方向之兩端部的連接端子、及配線基板的平台部分係以第1硬化區域加以固定,且透過導電性粒子而電連接。
  4. 一種接著膜,其第1未硬化接著劑層、及硬化後之玻璃轉移溫度低於第1未硬化接著劑層的第2未硬化接著劑層,係被設置在帶狀之剝離膜上不同的位置,第1及/或第2未硬化接著劑層為含有導電性粒子之 異向導電性接著劑層,第1異向導電性接著劑層、及導電性粒子含有率低於第1異向導電性接著劑層的第2異向導電性接著劑層,係設置在剝離膜上的不同位置。
  5. 如申請專利範圍第4項之接著膜,其中,係將第1未硬化接著劑層及第2未硬化接著劑層沿著剝離膜的長邊方向設置。
  6. 如申請專利範圍第5項之接著膜,其中,第1未硬化接著劑層係位於剝離膜之寬度方向的兩端部,第2未硬化接著劑層則位於該兩端部之間。
  7. 如申請專利範圍第4項之接著膜,其中,玻璃轉移溫度彼此不同的第1及第2未硬化接著劑層,係構成對應電氣零件大小之長度的連接單位,該連接單位配置排列在剝離膜的長邊方向。
  8. 一種連接方法,係用以藉申請專利範圍第4~7項中任一項之接著膜將配線基板、及至少在一面上設置有連接端子之電氣零件加以固定;將第1未硬化接著劑層、及硬化後之玻璃轉移溫度低於第1未硬化接著劑層的第2未硬化接著劑層設置在配線基板與電氣零件之間的不同位置,使第1及第2未硬化接著劑層硬化,將配線基板及電氣零件加以固定。
  9. 如申請專利範圍第8項之連接方法,其中,係在將第1未硬化接著劑層設置在電氣零件之長邊方向的兩端部、且將第2未硬化接著劑層設置在該兩端部之間的狀態下,將 第1及第2未硬化接著劑層加以硬化。
  10. 如申請專利範圍第8或9項之連接方法,其中,將申請專利範圍第4~7項中任一項之接著膜移動於配線基板上,然後將接著膜之第1及第2未硬化接著劑層轉附於配線基板,藉此將第1及第2未硬化接著劑層設置在配線基板。
  11. 如申請專利範圍第10項之連接方法,其中,係使用申請專利範圍第7項之接著膜,按各連接單位將第1及第2未硬化接著劑層轉附於配線基板。
TW097119330A 2007-05-24 2008-05-26 Electrical device, connection method and subsequent film TWI387412B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007137921 2007-05-24

Publications (2)

Publication Number Publication Date
TW200847866A TW200847866A (en) 2008-12-01
TWI387412B true TWI387412B (zh) 2013-02-21

Family

ID=40032036

Family Applications (2)

Application Number Title Priority Date Filing Date
TW097119331A TWI422294B (zh) 2007-05-24 2008-05-26 Electrical device, connection method and subsequent film
TW097119330A TWI387412B (zh) 2007-05-24 2008-05-26 Electrical device, connection method and subsequent film

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW097119331A TWI422294B (zh) 2007-05-24 2008-05-26 Electrical device, connection method and subsequent film

Country Status (6)

Country Link
JP (2) JP5013114B2 (zh)
KR (1) KR101203017B1 (zh)
CN (1) CN101681855B (zh)
HK (1) HK1139506A1 (zh)
TW (2) TWI422294B (zh)
WO (2) WO2008143358A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5608504B2 (ja) * 2010-10-06 2014-10-15 デクセリアルズ株式会社 接続方法及び接続構造体
KR101712043B1 (ko) * 2010-10-14 2017-03-03 삼성전자주식회사 적층 반도체 패키지, 상기 적층 반도체 패키지를 포함하는 반도체 장치 및 상기 적층 반도체 패키지의 제조 방법
WO2013038468A1 (ja) * 2011-09-12 2013-03-21 株式会社メイコー 部品内蔵基板の製造方法及びこれを用いた部品内蔵基板
JP5926590B2 (ja) * 2012-03-23 2016-05-25 デクセリアルズ株式会社 接続体の製造方法、及び電子部品の接続方法
US9740067B2 (en) * 2012-09-03 2017-08-22 Sharp Kabushiki Kaisha Display device and method for producing same
JP6307308B2 (ja) * 2014-03-06 2018-04-04 デクセリアルズ株式会社 接続構造体の製造方法、及び回路接続材料
JP6241326B2 (ja) * 2014-03-07 2017-12-06 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
JP2016001574A (ja) * 2014-06-12 2016-01-07 株式会社デンソー ラミネート外装電池
JP6759578B2 (ja) 2014-12-22 2020-09-23 デクセリアルズ株式会社 異方導電性フィルム及び接続構造体
CN109790425B (zh) * 2016-10-03 2022-03-04 昭和电工材料株式会社 导电性膜、卷绕体、连接结构体和连接结构体的制造方法
TWI763750B (zh) * 2016-12-01 2022-05-11 日商迪睿合股份有限公司 異向性導電膜
CN109964371B (zh) * 2016-12-01 2021-03-12 迪睿合株式会社 各向异性导电膜
KR102066934B1 (ko) * 2018-07-11 2020-01-16 주식회사 비에이치 Pen fpcb를 이용한 접합 방법 및 이를 이용해 제조된 대면적 pen fpcb 조립체
TWI724911B (zh) * 2020-05-26 2021-04-11 友達光電股份有限公司 發光裝置及其製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260533A (ja) * 1993-03-08 1994-09-16 Sony Chem Corp Icチップ実装方法
JP2004071857A (ja) * 2002-08-07 2004-03-04 Sharp Corp 基板接続部の構造、並びに該構造を有する電子部品及び液晶表示装置
JP2007047286A (ja) * 2005-08-08 2007-02-22 Matsushita Electric Ind Co Ltd 異方導電膜貼付装置及び方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3225800B2 (ja) * 1995-08-09 2001-11-05 三菱電機株式会社 半導体装置
JP2891184B2 (ja) * 1996-06-13 1999-05-17 日本電気株式会社 半導体装置及びその製造方法
JP4030220B2 (ja) * 1998-04-07 2008-01-09 新光電気工業株式会社 半導体チップの実装構造
JP3506003B2 (ja) * 1998-05-19 2004-03-15 ソニーケミカル株式会社 異方性導電接着材
MY124944A (en) * 2000-02-09 2006-07-31 Hitachi Chemical Co Ltd Resin composition, adhesives prepared therewith for bonding circuit members,and circuits boards
JP2003086633A (ja) * 2001-09-13 2003-03-20 Canon Inc 配線基板及びこれを備えた表示装置
KR100780956B1 (ko) 2006-08-17 2007-12-03 삼성전자주식회사 이종 언더필 반도체 패키지 및 그의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260533A (ja) * 1993-03-08 1994-09-16 Sony Chem Corp Icチップ実装方法
JP2004071857A (ja) * 2002-08-07 2004-03-04 Sharp Corp 基板接続部の構造、並びに該構造を有する電子部品及び液晶表示装置
JP2007047286A (ja) * 2005-08-08 2007-02-22 Matsushita Electric Ind Co Ltd 異方導電膜貼付装置及び方法

Also Published As

Publication number Publication date
TWI422294B (zh) 2014-01-01
KR20090085017A (ko) 2009-08-06
KR101203017B1 (ko) 2012-11-20
HK1139506A1 (en) 2010-09-17
JP5152499B2 (ja) 2013-02-27
WO2008143358A1 (ja) 2008-11-27
JP5013114B2 (ja) 2012-08-29
WO2008146793A1 (ja) 2008-12-04
JP2009004768A (ja) 2009-01-08
JP2009004767A (ja) 2009-01-08
CN101681855B (zh) 2013-03-13
TW200847866A (en) 2008-12-01
CN101681855A (zh) 2010-03-24
TW200850094A (en) 2008-12-16

Similar Documents

Publication Publication Date Title
TWI387412B (zh) Electrical device, connection method and subsequent film
KR102276325B1 (ko) 이방 도전성 필름
JP2001052778A (ja) 異方導電性接着フィルムおよびその製造方法
KR102476432B1 (ko) 접속체의 제조 방법, 전자 부품의 접속 방법, 접속체
TWI703585B (zh) 異向性導電膜及連接構造體
KR102639862B1 (ko) 접속체 및 접속체의 제조 방법
TWI775373B (zh) 連接結構體的製造方法
JP6996595B2 (ja) 多層配線基板
JP2014096531A (ja) 接続構造体の製造方法及び接続方法
WO2016114320A1 (ja) 多層基板
KR101973823B1 (ko) 이방성 도전 접속 재료, 필름 적층체, 접속 방법 및 접속 구조체
JP2010251336A (ja) 異方性導電フィルム及びこれを用いた接続構造体の製造方法
TW200941602A (en) Contact structure and forming method thereof and connecting structure thereof
JP7369756B2 (ja) 接続体及び接続体の製造方法
WO2001071854A1 (en) Electrical connection material and electrical connection method
JP5066144B2 (ja) プリント配線板、プリント配線板の接続構造、およびこれらの製造方法
JPH09246423A (ja) 半導体装置
JP2011199138A (ja) 電子部品相互の接続方法及び接続構造
JP5218725B2 (ja) 接続方法
KR20170009822A (ko) 이방성 도전 필름
JP6370562B2 (ja) 接続体の製造方法、フレキシブル基板の接続方法、接続体及びフレキシブル基板
JP6431572B2 (ja) 接続フィルム、接続フィルムの製造方法、接続構造体、接続構造体の製造方法及び接続方法
KR102552788B1 (ko) 이방성 도전 필름 및 그 제조 방법
JP6177642B2 (ja) 接続フィルム、接続構造体、接続構造体の製造方法、接続方法
JP2017175015A (ja) 接続体の製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees