TWI364632B - Photoresist removing liquid compositions for the substrate containing ag and/ or ag alloy, process for making aptterns made from these, and process for making display units containing them - Google Patents

Photoresist removing liquid compositions for the substrate containing ag and/ or ag alloy, process for making aptterns made from these, and process for making display units containing them Download PDF

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Publication number
TWI364632B
TWI364632B TW93125879A TW93125879A TWI364632B TW I364632 B TWI364632 B TW I364632B TW 93125879 A TW93125879 A TW 93125879A TW 93125879 A TW93125879 A TW 93125879A TW I364632 B TWI364632 B TW I364632B
Authority
TW
Taiwan
Prior art keywords
silver
solvent
formula
photoresist
group
Prior art date
Application number
TW93125879A
Other languages
English (en)
Chinese (zh)
Other versions
TW200508820A (en
Inventor
Takuo Ohwada
Norio Ishikawa
Seiichi Yokoyama
Original Assignee
Kanto Kagaku
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku, Sony Corp filed Critical Kanto Kagaku
Publication of TW200508820A publication Critical patent/TW200508820A/zh
Application granted granted Critical
Publication of TWI364632B publication Critical patent/TWI364632B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • ing And Chemical Polishing (AREA)
  • Electroluminescent Light Sources (AREA)
TW93125879A 2003-08-28 2004-08-27 Photoresist removing liquid compositions for the substrate containing ag and/ or ag alloy, process for making aptterns made from these, and process for making display units containing them TWI364632B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003305299A JP4405767B2 (ja) 2003-08-28 2003-08-28 銀及び／又は銀合金を含む基板のフォトレジスト剥離液組成物、それを用いたパターンの製造方法ならびにそれを含む表示装置

Publications (2)

Publication Number Publication Date
TW200508820A TW200508820A (en) 2005-03-01
TWI364632B true TWI364632B (en) 2012-05-21

Family

ID=34269294

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93125879A TWI364632B (en) 2003-08-28 2004-08-27 Photoresist removing liquid compositions for the substrate containing ag and/ or ag alloy, process for making aptterns made from these, and process for making display units containing them

Country Status (5)

Country Link
JP (1) JP4405767B2 (ko)
KR (2) KR101318694B1 (ko)
CN (1) CN1846173B (ko)
TW (1) TWI364632B (ko)
WO (1) WO2005022268A1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101082018B1 (ko) * 2004-05-07 2011-11-10 주식회사 동진쎄미켐 레지스트 제거용 조성물
CN1950755B (zh) * 2004-05-07 2011-05-11 株式会社东进世美肯 用于去除光刻胶的组合物
WO2007029767A1 (ja) * 2005-09-09 2007-03-15 Tokyo Ohka Kogyo Co., Ltd. ホトリソグラフィ用洗浄剤およびこれを用いたホトレジストパターン形成方法
KR20090023398A (ko) * 2006-06-21 2009-03-04 이데미쓰 고산 가부시키가이샤 스트리핑 조성물, ｔｆｔ 기판의 제조 방법 및 스트리핑 조성물의 리사이클 방법
KR101403515B1 (ko) * 2006-06-22 2014-06-09 주식회사 동진쎄미켐 포토레지스트 제거용 조성물
KR101292497B1 (ko) * 2007-01-12 2013-08-01 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법
JP2008262960A (ja) * 2007-04-10 2008-10-30 Daisho Denshi:Kk 発光素子搭載用有機配線基板及びその製造方法
KR20110096126A (ko) * 2008-11-28 2011-08-29 이데미쓰 고산 가부시키가이샤 방식성 포토레지스트 박리제 조성물
KR20110053557A (ko) * 2009-11-16 2011-05-24 동우 화인켐 주식회사 레지스트 박리액 조성물
KR102414295B1 (ko) * 2016-01-22 2022-06-30 주식회사 이엔에프테크놀로지 포토레지스트 제거용 박리액 조성물
JP6905421B2 (ja) * 2017-08-28 2021-07-21 株式会社ジャパンディスプレイ 表示装置
KR102528302B1 (ko) * 2018-02-05 2023-05-04 삼성디스플레이 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트 박리 방법
CN108321163B (zh) * 2018-02-07 2020-10-16 业成科技（成都）有限公司 影像撷取装置及其制造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5880638A (ja) * 1981-11-10 1983-05-14 Kanto Kagaku Kk ポジ型フオトレジスト用剥離液
JPS6350838A (ja) * 1986-08-21 1988-03-03 Japan Synthetic Rubber Co Ltd 剥離液
JPS63208043A (ja) * 1987-02-25 1988-08-29 Kanto Kagaku Kk ポジ型フオトレジスト用水溶性剥離液
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5545353A (en) * 1995-05-08 1996-08-13 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
JP2911792B2 (ja) * 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
TW426816B (en) * 1996-04-17 2001-03-21 Ekc Technology Inc Hydroxylamine-gallic compound composition and process
JP3993272B2 (ja) * 1997-05-02 2007-10-17 大日本印刷株式会社 厚膜パターン形成方法
JP2000008184A (ja) * 1998-06-24 2000-01-11 Toppan Printing Co Ltd 多層導電膜のエッチング方法
JP2000100558A (ja) * 1998-09-18 2000-04-07 Matsushita Electric Ind Co Ltd 発光装置
JP3161705B2 (ja) * 1999-01-20 2001-04-25 東京応化工業株式会社 ポジ型レジスト用剥離液
JP2001356496A (ja) * 2000-06-15 2001-12-26 Nagase Kasei Kogyo Kk フォトレジスト剥離剤組成物及びその使用方法
JP2002196510A (ja) * 2000-12-26 2002-07-12 Nippon Zeon Co Ltd レジスト用剥離液
JP2002202617A (ja) * 2000-12-27 2002-07-19 Tosoh Corp レジスト剥離用組成物
JP4474776B2 (ja) * 2001-01-22 2010-06-09 東ソー株式会社 レジスト剥離剤
JP4470328B2 (ja) * 2001-02-09 2010-06-02 東ソー株式会社 レジスト剥離剤
JP4483114B2 (ja) * 2001-03-30 2010-06-16 東ソー株式会社 レジスト剥離剤
JP2002357908A (ja) * 2001-05-31 2002-12-13 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液
JP4867092B2 (ja) * 2001-07-04 2012-02-01 三菱瓦斯化学株式会社 レジスト剥離剤組成物
JP4620298B2 (ja) * 2001-07-23 2011-01-26 パイオニア株式会社 銀若しくは銀合金配線及びその形成方法並びに表示パネル基板
JP2003140364A (ja) * 2001-11-02 2003-05-14 Mitsubishi Gas Chem Co Inc 銅配線基板向けレジスト剥離液
JP2003156859A (ja) * 2001-11-22 2003-05-30 Mitsubishi Gas Chem Co Inc フォトレジスト剥離剤組成物および剥離方法

Also Published As

Publication number Publication date
JP4405767B2 (ja) 2010-01-27
WO2005022268A1 (ja) 2005-03-10
KR101318694B1 (ko) 2013-10-16
CN1846173A (zh) 2006-10-11
CN1846173B (zh) 2011-01-19
KR20120068921A (ko) 2012-06-27
TW200508820A (en) 2005-03-01
JP2005077526A (ja) 2005-03-24
KR20060123714A (ko) 2006-12-04

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