TWI364632B - Photoresist removing liquid compositions for the substrate containing ag and/ or ag alloy, process for making aptterns made from these, and process for making display units containing them - Google Patents

Photoresist removing liquid compositions for the substrate containing ag and/ or ag alloy, process for making aptterns made from these, and process for making display units containing them Download PDF

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TWI364632B
TWI364632B TW93125879A TW93125879A TWI364632B TW I364632 B TWI364632 B TW I364632B TW 93125879 A TW93125879 A TW 93125879A TW 93125879 A TW93125879 A TW 93125879A TW I364632 B TWI364632 B TW I364632B
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silver
solvent
formula
photoresist
group
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TW93125879A
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Chinese (zh)
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TW200508820A (en
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Takuo Ohwada
Norio Ishikawa
Seiichi Yokoyama
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Kanto Kagaku
Sony Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electroluminescent Light Sources (AREA)
  • ing And Chemical Polishing (AREA)

Description

1364632 六、發明說明: 【發明所屬之技術領域】 本發明係有關於一種用於含有銀及/或銀合金之基板 的光阻材料剥離液組成物,使用該組成物之圖案製造方法 以及含有以該組成物製成之圖案的顯示裝置。 【先前技術】 相較於液晶顯示器,有機EL顯示器因其可自己發光的 特性,可以期待該有機EL顯示器將成為低耗電、高亮度、 局對比之下世代的平板顯示器。 有機發光元件,例如,已知有使TFT(Thin Film Transistor,薄膜電晶體)及平垣化層等介於中間依順序層 積第1電極、含有發光層之有機層、及第2電極而成之物。 在發光層所發生的光線,有從基板側發出的情況,亦有從 第2電極側發出的情況β 以往,在半導體基板中,鋁、鋁合金等係被使用作為 配線材,在平板係作為TFT配線,近年來亦使用作為反射 型液晶顯示器之反射膜(例如參照日本專利文獻1}。又,亦 使用鋁、鋁合金、鉻等材料作為有機之反射電極(例如 參照日本專利文獻2)。 通常金屬反射膜或是反射電極係藉由CVD、濺鍍、電 解電链等在基板上堆積形成金屬料,在胃金屬膜上塗布 光阻材料、曝光、顯像形成遮罩,對該金屬膜之非遮罩區 1^64632 域藉由以濕式蝕刻液進行之濕式蝕刻或是藉由乾式蝕刻而 形成圖案後,使用光阻材料剝離液將作為遮罩所使用之光 阻材料從該金屬膜剝離而形成。 以往光阻材料剝離液為了將經由後烘乾(p〇st bake)等 加熱而固定於基板上之光阻材料剝離,而使用含有苯酚及 氯化烴之液體,因為有環境上的問題,正在開發以咪唑啶 酮為主成分之組成物(例如,參照日本專利文獻3)、各種烷 醇胺和1,3-二甲基-2-咪唑啶酮之混合溶液(例如,參照日本 專利文獻4)。 其後,由於採用乾式蝕刻而必須剝離和以往不同之變 質光阻材料層,所以開發出各種烷醇胺和13二甲基_2咪 唑啶酮和二f基亞砜之組成物(例如參考曰本專利文獻 5)、各種烧醇胺和極性有機溶劑和含有各種防蝕劑之組成 物。 此等組成物’可以剝離乾式蝕刻後之光阻變質層和固 疋於基板之光阻材.料’對-於乾式蝕刻後及濕式铷刻後之兩 種基板’可以使用丼作為光阻材料剝離液。 作為防钱劑’有報告揭示兒茶酚(例如參照曰本專利文 獻6)、苯紛、乙酸等弱酸(例如參照日本專利文獻7)、糖類 (例如參照曰本專利文獻8)、兒茶酚、沒食子酸酯(gallate) 或是沒食子酸(gallic acid)中任一者(例如參照曰本專利文 獻9)、胺基酸(例如參照曰本專利文獻1 〇)等。 其他’已知有為了加強剝離能力而更添加羥胺之例 子’和因為非水剝離液(1)必須使用異丙醇沖洗、(2)水洗時 1364632 若在金屬表面殘留有胺化合物則會有金屬被腐钱等之缺 點,而由有機胺化合物、極性溶劑、水和防姓劑所構成之 水溶性剝離液之例子(例如參照日本專利文獻1卜專利文獻 12)。 最近,具有比鋁及鋁合金更高反射率之銀及銀合金受 到注意’在反射膜、反射電極等之中,已經使用了含有銀 之單層膜、含有銀層之多層膜。為了避開反射膜在空氣中 曝露時濕氣等之影響,以及為了彌補銀對短波長之光線之 反射率較低的問題,而在銀表面上使用形成有安定氧化膜 之多層膜(例如參照日本專利文獻13、專利文獻14),當銀 表面不會曝露在空氣中時可以使用單層膜(例如參照日本 專利文獻13、專利文獻15)(>但是此等文獻,關於濕式蝕 刻,或是關於光阻會變質而變得不容易剝離之乾式蝕刻, 完全沒有揭示有關於銀膜之圖案形成所使用之光阻剝離 液,現存之光阻材料剝離液,只有對以往的鋁及鋁合金沒 有腐飯性之光阻材料剝離:液,.尚未開_發出一種在形成銀及/ 或銀合金之圖案時能夠不腐蝕銀及/或銀合金之適合使用 的光阻材料剝離液。 如上述,要求提供一種能夠不腐蝕銀及/或銀合金、且 對光阻材料及光阻材料變質層具有高剝離性之光阻材料制 離液。 ^ [曰本專利文獻1]特開2003_57674號公報 [曰本專利文獻2]特開2〇〇2 216976號公報 [曰本專利文獻3]特開昭63-50838號公報 1364632 [曰本專利文獻4]特開昭63 — 208043號公報 [曰本專利文獻5]特開平4_350660號公報 [曰本專利文獻6]特開平5-281753號公報 [曰本專利文獻7]特開平6-2023 45號公報 [曰本專利文獻8]特開平8-20205 1號公報 [曰本專利文獻9]特開平9-296200號公報 [曰本專利文獻1 〇]特開平7-295240公報 [曰本專利文獻11]特開平4_289866號公報 [曰本專利文獻12]特開平6_266119公報 [曰本專利文獻13]特開2000-8184號公報 [曰本專利文獻14]特開2002-13 9609號公報 [曰本專利文獻15]特開2〇〇3 228〇71號公報 【發明内容】 [發明所欲解決之問題] 因此,本發明係為了消除上述問題點,而提供—種能 夠適合應用於含有銀及/或銀合金之基板之光阻材料剝離 液組成物。 [解決問題之技術手段] 以往之光阻材料剝離液所使用之胺化合物,可以分類 為具有羥基之胺化合物(烷醇胺基)類和不具有羥基之胺化 合物類。 具有羥基之胺化合物類,可以舉出的有單乙醇胺、單 1364632 異丙醇胺、N-甲基乙醇胺、N-乙基乙醇胺、N-丁基乙醇胺、 2-(2-胺基乙胺基)乙醇、2_(2_胺基乙胺基)_2_丙醇、2_(2-胺 基乙氧基)乙醇、二乙醇胺、二異丙醇胺' N,N-二甲基乙醇 胺、N,N-二乙基乙醇胺、N,N_二丁基乙醇胺、N甲基二乙 醇胺、N-(3-胺基丙基)_N_(2_羥基乙基)_2-胺基乙醇、三乙 醉胺、三異丙醇胺等。 未具有羥基之胺化合物類,可以舉出的有二伸乙三 胺、三伸乙四胺、二伸丙三胺、嗎福林(m〇rph〇line)衍生物 等。 但是,重新思考適合應用於含有銀及/或銀合金之基板 之光阻材料剝離液時,得到以下之見識:使用鋁及鋁合金 時所使用之將以往的胺化合物例如單乙醇胺作為主要成分 之光阻材料剝離液時,雖然具有高剝離性,但是直接使用 時’會腐姓掉銀及銀合金。 又’在單乙醇胺之胺基上更具有取代基之二乙醇胺、 三乙尊胺、N,N-二甲基乙醇胺等,如後述,可清楚地知道, 雖然對銀及銀合金之腐蝕性較小,但是對光阻材料剝離 性、特別是光阻材料變質層之剝離有困難。 因此,本發明者等為了一併解決上述課題而專心、重 覆地檢g中,得知有機胺化合物之伸烧基鍵之碳鏈長度 太長時,剝離性下降,太短時對銀及銀合金之腐蝕性增加, 又,藉由在伸烷基鏈之間導入異原子,即使伸烷基之碳鏈 具有某種程度之長度,φ可以防止剝離性下降,因此發現 對於某種特定之有機胺化合物以及單乙醇胺,冑由添加特 1364632 疋之防餘劑,則可以用作為光阻材料剝離液,更加研究之 結果’終於完成本發明。 亦即,本發明係有關一種含有銀及/或銀合金之基板之 光阻材料剝離液組成物,含有: 選自由 一式(I) nh2-a-y-b-z 所表示之化合物,式中,A、B係分別相互獨立為直鏈狀或 是分枝鏈狀之碳數1〜5之伸烷基,γ係NH或是〇中任一 者,Z係NH2、OH、NH-D-NH2(此處D係直鏈狀或是分枝 鏈狀之碳數1〜5之伸烷基), —式(II) NH2-A-N(-B-〇H)2 所表示之化合物,式中,a、B係與式⑴相同, -式(III)1364632 6. Technical Field of the Invention The present invention relates to a resist material peeling liquid composition for a substrate containing silver and/or a silver alloy, a pattern manufacturing method using the same, and a A display device in which the composition is patterned. [Prior Art] Compared to a liquid crystal display, an organic EL display can be expected to be a low-power, high-brightness, flat-contrast flat panel display due to its self-illuminating characteristics. In the organic light-emitting device, for example, a TFT (Thin Film Transistor), a flattening layer, and the like are sequentially laminated with a first electrode, an organic layer containing a light-emitting layer, and a second electrode. Things. The light emitted from the light-emitting layer may be emitted from the substrate side, or may be emitted from the second electrode side. In the semiconductor substrate, aluminum, aluminum alloy, or the like is used as the wiring material. In the case of the TFT wiring, a reflective film of a reflective liquid crystal display has been used (see, for example, Japanese Patent Laid-Open No. Hei.). A material such as aluminum, aluminum alloy, or chromium is used as an organic reflective electrode (see, for example, Japanese Patent Laid-Open Publication No. 2). Usually, the metal reflective film or the reflective electrode is deposited on the substrate by CVD, sputtering, electrolytic chain or the like to form a metal material, and the photoresist film is coated on the stomach metal film, exposed, and developed to form a mask. The non-mask region 1^64632 region is patterned by wet etching with a wet etching solution or by dry etching, and the photoresist material used as a mask is used from the photoresist material. The metal film is formed by peeling off. The conventional photoresist material stripping liquid is used to remove the photoresist material which is fixed on the substrate by heating by post-baking or the like, and is used to contain phenol and chlorine. Hydrocarbon liquids, due to environmental problems, are developing compositions containing imidazolidinone as a main component (for example, refer to Japanese Patent Document 3), various alkanolamines, and 1,3-dimethyl-2-imidazolidinium. A mixed solution of a ketone (for example, refer to Japanese Patent Publication No. 4). Thereafter, since it is necessary to peel off a layer of a modified photoresist material different from the conventional one by dry etching, various alkanolamines and 13-dimethyl-2-imidazolidinium have been developed. A composition of a ketone and a bis-fyl sulfoxide (for example, refer to Japanese Patent Laid-Open Publication No. 5), various alkanolamines and a polar organic solvent, and a composition containing various corrosion inhibitors. These compositions can peel off the photoresist after dry etching. The metamorphic layer and the photo-resist material that is fixed to the substrate. The material can be used as a photoresist material stripping solution after the dry etching and after the wet etching. As a anti-money agent, there is a report revealing Chamophenol (for example, see Patent Document 6), weak acid such as benzene or acetic acid (for example, refer to Japanese Patent Laid-Open No. 7), saccharides (for example, refer to Patent Document 8), catechol, gallate (gallate) Or gallic acid (gallic Either (for example, refer to the patent document 9), an amino acid (for example, refer to the patent document 1), etc. Other 'an example of adding a hydroxylamine to enhance the peeling ability' is known. The water stripping solution (1) must be rinsed with isopropyl alcohol, and (2) washed with water when there is an amine compound. If an amine compound remains on the metal surface, there is a disadvantage that the metal is rotted, and the organic amine compound, polar solvent, water, and An example of a water-soluble peeling liquid composed of a surname agent (for example, refer to Japanese Patent Laid-Open Publication No. Hei 12). Recently, silver and a silver alloy having higher reflectance than aluminum and aluminum alloy have been noted. Among them, a single-layer film containing silver and a multilayer film containing a silver layer have been used, in order to avoid the influence of moisture and the like when the reflective film is exposed to air, and to compensate for the reflectance of silver to short-wavelength light. A low-level problem is to use a multilayer film formed with a stable oxide film on a silver surface (for example, refer to Japanese Patent Literature 13, Patent Document 14), and a single layer can be used when the silver surface is not exposed to the air. (For example, refer to Japanese Patent Literature 13 and Patent Document 15) (> However, such documents, regarding wet etching, or dry etching in which the photoresist becomes deteriorated and which is not easily peeled off, are not disclosed at all about the silver film. The photoresist stripping solution used for pattern formation, the existing photoresist material stripping solution, only the photoresist of the conventional aluminum and aluminum alloy without the rice-repellent property: liquid, has not been opened _ issued a form of silver and / or The pattern of the silver alloy can not corrode the suitable photoresist stripping solution of silver and/or silver alloy. As described above, it is required to provide a photoresist material repellent which is capable of not corroding silver and/or a silver alloy and having high releasability to a photoresist material and a photoresist layer. [Patent Document 1] Japanese Laid-Open Patent Publication No. JP-A No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. [Patent Document 8] Japanese Laid-Open Patent Publication No. Hei 9-296200 (Japanese Patent Laid-Open Publication No. Hei 9-296200). [Patent Patent Document 12] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. 2000-8184. [Problem to be Solved by the Invention] Therefore, the present invention has been made to be suitable for use in containing silver and/or in order to eliminate the above problems. A resist material peeling liquid composition of a silver alloy substrate. [Means for Solving the Problem] The amine compound used in the conventional photoresist material stripping liquid can be classified into an amine compound (alkanolamine group) having a hydroxyl group and an amine compound having no hydroxyl group. The amine compound having a hydroxyl group may, for example, be monoethanolamine, mono 1364632 isopropanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine or 2-(2-aminoethylamine). Ethanol, 2_(2-aminoethylamino)-2-propanol, 2-(2-aminoethoxy)ethanol, diethanolamine, diisopropanolamine 'N,N-dimethylethanolamine, N, N-diethylethanolamine, N,N-dibutylethanolamine, N-methyldiethanolamine, N-(3-aminopropyl)_N_(2-hydroxyethyl)_2-aminoethanol, trihexylamine , triisopropanolamine and the like. The amine compound having no hydroxyl group may, for example, be diethylenetriamine, triethylenetetramine, diexaminetriamine or moffrphline derivative. However, when rethinking a photoresist liquid stripper suitable for use in a substrate containing silver and/or a silver alloy, the following findings are obtained: a conventional amine compound such as monoethanolamine is used as a main component when aluminum and an aluminum alloy are used. In the case of a photoresist material stripping solution, although it has high peelability, it can be used as a silver paste and a silver alloy. Further, 'diethanolamine, triethylamine, N,N-dimethylethanolamine, etc. having a substituent on the amine group of monoethanolamine, as will be described later, are clearly known to be corrosive to silver and silver alloys. It is small, but it is difficult to peel off the photoresist material, especially the peeling layer of the photoresist material. Therefore, the present inventors have intensively and repeatedly examined g in order to solve the above problems together, and found that when the carbon chain length of the extended base bond of the organic amine compound is too long, the peeling property is lowered, and when it is too short, silver and The corrosion resistance of the silver alloy is increased, and by introducing a hetero atom between the alkyl chain, even if the carbon chain of the alkyl group has a certain length, φ can prevent the peeling property from being lowered, so that it is found to be specific to The organic amine compound and the monoethanolamine, which are added to the anti-fouling agent of the special 1364632, can be used as a photoresist material stripping liquid, and the results of further research 'finally complete the present invention. That is, the present invention relates to a photoresist material stripping liquid composition comprising a substrate of silver and/or a silver alloy, comprising: a compound represented by the formula (I) nh2-aybz, wherein A and B are respectively Independent of each other as a linear or branched chain of alkylene groups having a carbon number of 1 to 5, γ-based NH or hydrazine, Z-based NH2, OH, NH-D-NH2 (here, D-system a compound of the formula (II) NH2-AN(-B-〇H)2, which is a linear or branched chain having a carbon number of 1 to 5, wherein a and B are Equation (1) is the same, - Formula (III)

R係Η、 所表示之化合物,式中 碳數1〜5之烧基、後數 1〜5之羥基烷基或是碳數!〜5之胺基烷基, —兒茶紛, ~氫醒, —五倍子酚, —沒食子酸,以及R is a compound represented by hydrazine, wherein the carbon number is 1 to 5, the hydroxyalkyl group is 1 to 5 or the carbon number! ~5 aminoalkyl, - catechu, ~ hydrogen awake, - gallic phenol, - gallic acid, and

和1種或2 組成物係非水 1364632 系。 又,本發明係有關於前述光阻材料剥離液,式(i)、式 (Π)或式(ΙΠ)所表示之化合物係二伸乙三胺、2-(2-胺基乙基 胺基)乙醇、2-(2 -胺基乙基胺基)-2-丙醇、N-(3 -胺基丙 基)-N-(2-羥基乙基)-2-胺基乙醇、2-(2-胺基乙氧基)乙醇、 二伸丙三胺 '三伸乙四胺、嗎福林等。 而且’本發明有關之前述光阻材料剝離液組成物,式 (I)或式(II)或式(III)所表示之化合物的總含量係20質量〇/〇 以上且5 0質量%以下。 又’本發明有關之前述光阻材料剝離液組成物,含有 式(I)、式(II)或式(III)所表示之化合物,極性有機溶劑係選 自由1,3-二甲基咪唾咬_、二乙二醇單丁醚、丙二醇、 二甲基亞碾及N-甲基-2-吡咯啶酮所組成之群中1種或2種 以上。 又’本發明有關之前述光阻材料剝離液組成物,.更含 有防钱·劑-。 又,本發明有關之前述光阻材料剝離液組成物,含有 選自由單乙醇胺、兒茶酚、氫醌、五倍子酚、沒食子酸及 沒食子酸酯所組成之群中丨種或2種以上。 而且,本發明有關之前述光阻材料剝離液組成物,係 3有選自由單乙醇胺、兒茶酚、氫醌、五倍子酚、沒食子 酸及沒食子酸酯所組成之群中1種或2種以上之光阻材料 亲J離液,《a成物,極性有機溶劑係N甲基_2吡咯啶酮及/或 1,3 - —甲基-2-味°坐咬酿I。 Γ364632 本發明係有關於— —種銀及/或銀合金之圖案形成方And 1 or 2 constituents are non-water 1364632. Further, the present invention relates to the above-mentioned photoresist material peeling liquid, and the compound represented by the formula (i), the formula (Π) or the formula (ΙΠ) is a diethylenetriamine and a 2-(2-aminoethylamino group). Ethanol, 2-(2-aminoethylamino)-2-propanol, N-(3-aminopropyl)-N-(2-hydroxyethyl)-2-aminoethanol, 2- (2-Aminoethoxy)ethanol, di-extended propylene triamine 'tris-ethyltetramine, whallin, and the like. Further, the total content of the compound represented by the formula (I) or the formula (II) or the formula (III) is 20 mass% / 〇 or more and 50 mass % or less. Further, the composition of the above-mentioned photoresist material stripping liquid according to the present invention contains a compound represented by the formula (I), the formula (II) or the formula (III), and the polar organic solvent is selected from the group consisting of 1,3-dimethylimene. One or two or more of the group consisting of bite-, diethylene glycol monobutyl ether, propylene glycol, dimethyl amide, and N-methyl-2-pyrrolidone. Further, the composition of the above-mentioned photoresist material stripping liquid according to the present invention further contains an anti-money agent. Moreover, the composition of the photoresist material stripping liquid according to the present invention contains a group selected from the group consisting of monoethanolamine, catechol, hydroquinone, gallic phenol, gallic acid, and gallic acid ester or 2 More than one species. Further, the above-mentioned resist material peeling liquid composition according to the present invention is one selected from the group consisting of monoethanolamine, catechol, hydroquinone, gallic phenol, gallic acid, and gallic acid ester. Or two or more kinds of photoresist materials are separated from the liquid, "a product, a polar organic solvent N methyl 2 pyrrolidone and / or 1,3 - methyl-2-flavor. Γ364632 The present invention relates to the patterning of silver and/or silver alloys

電極上剝離之步驟。 ^ n〜少势,μ次便用則述光阻 成物將該光阻材料從該金屬反射膜或是反射 又,本發明有關之前述銀及/或銀合金之圖案形成方 法’其中蝕刻步驟係乾式蝕刻。 種具備由銀及/或銀合金所構成The step of peeling off the electrode. ^ n~ 少 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Dry etching. Species consisting of silver and/or silver alloy

而成之膜,使用前述光阻材料剝離液將前述形成有遮罩之 光:阻材料剝灕而形成。 又’本發明係有關於—種具備 之反射膜或是反射電極之顯示裝置 具備有複數個顯示元件,並特掛袁 又,本發明有關之前述顯示裝置,其中顯示元件係在 由銀及/或銀合金所構成之反射膜或反射電極上,依照順序 層積含有發光層之有機層及電極,並由電極側透出在該發 光層所發生的光線而成之有機發光元件。 又,本發明有關之前述顯示裝置,其中該顯示元件, 係在基板設有畫素電極、電連接該畫素電極之驅動元件及 配線,在該基板與驅動元件及配線之間設置有由銀及/或銀 合金所構成之反射膜或是反射電極而成之液晶顯示元件。 1364632 [功效] 本發明之光阻材料剝離液組成物,其組成係採用式 ⑴、式(II)、式(III)所表示之某種特定有機胺化合物或是某 種特定之防㈣’能夠不靠銀及銀合金而剝離含有銀及/ 或銀合金之基板之姓刻後的光阻材料。 本發明所使用之有機胺化合物,其機制雖然不明確, 但其化合物之結構中具有複數個某特定碳數之伸烷基,因 為伸烧基鏈之碳鏈長度太長時,剝離性下降,太短時對銀 及銀合金之靠性增加,因此本發明之組成藉由採用某特 定長度,而可以適用於含有銀及/或銀合金之基板。 又,即使是乾式钱刻後之光阻材料變質層,亦能夠不 腐钱銀及/或銀合金而得到良好的剝離,使以往認為是固難 的乾式蚀刻成為可能。 【實施方式】 以-下詳述本發明之實施形態。 本發明之光阻材料剝離液組成物,含有: 選自由The formed film is formed by peeling off the light in which the mask is formed and the resist material by using the above-mentioned photoresist peeling liquid. Further, the present invention relates to a display device having a reflective film or a reflective electrode, which is provided with a plurality of display elements, and the above-mentioned display device according to the present invention, wherein the display element is made of silver and/or Or an organic light-emitting element in which an organic layer and an electrode including a light-emitting layer are laminated on the reflective film or the reflective electrode formed of a silver alloy, and light generated in the light-emitting layer is transmitted from the electrode side. Further, in the display device according to the present invention, the display element is provided with a pixel electrode on a substrate, a driving element and a wiring electrically connecting the pixel electrode, and silver is disposed between the substrate and the driving element and the wiring. And a liquid crystal display element formed of a reflective film or a reflective electrode made of a silver alloy. 1364632 [Efficacy] The composition of the photoresist material stripping liquid of the present invention is composed of a specific organic amine compound represented by formula (1), formula (II), formula (III) or a specific anti-(four)' capable of The photoresist material of the substrate containing silver and/or silver alloy is peeled off without using silver or silver alloy. Although the mechanism of the organic amine compound used in the present invention is not clear, the structure of the compound has a plurality of alkylene groups having a specific carbon number, and since the carbon chain length of the extended alkyl chain is too long, the peeling property is lowered. The dependence on silver and silver alloy is too short, so that the composition of the present invention can be applied to a substrate containing silver and/or a silver alloy by using a certain length. Further, even in the case of the photoresist layer after the dry-cut etching, it is possible to obtain good peeling without the use of silver and/or silver alloy, and it is possible to perform dry etching which has been considered to be difficult. [Embodiment] An embodiment of the present invention will be described in detail below. The photoresist material stripping liquid composition of the invention comprises:

式(I) NHz-A-Y-B-Z 所表示之化合物,式中,a、b係分別相互獨立為直鏈狀或 疋分枝鏈狀之碳數1〜5之伸烷基,γ係NH或是〇中任一 者,Z係NH2、〇H、1^_1)_\112(此處D係直鏈狀或是分枝 鏈狀之碳數1〜5之伸烷基), 丄寸J厶 式(Η) NH2-A_N(_b_〇h)2 所表示之化合物, 式(m) A、B係與式⑴相同A compound represented by the formula (I) NHz-AYBZ, wherein a and b are each independently a linear or quinone branched chain alkyl group having 1 to 5 carbon atoms, γ-based NH or hydrazine Either Z series NH2, 〇H, 1^_1)_\112 (where D is a linear or branched chain carbon number of 1 to 5 alkyl groups), 丄 inch J 厶 ( Η) Compound represented by NH2-A_N(_b_〇h)2, formula (m) A, B is the same as formula (1)

N~~R 所表示之化合物,式中, 中汉係11、碳數1〜5之烷基、碳备 1〜5之羥基烷基或 土碳數 疋碳數1〜5之胺基烷基 五倍子酚;沒舍早确 兄余酚,虱醌,· 、盼沒食子酸以及沒食子酸醋所組成之群中】 以上,和1種或2種以上之極性有機溶劑。 — 2 ::於本發明之光阻材料剝離液組成物,以不含有 ^ ^ 3有水時,剝離液中所含有之成分 與水反應而顯示鹼性,會 會有腐蝕銀侧面、進入晶界(grain 一_畫素内部而增加缺陷的問題。 亦即,可以知道, 式⑴ NH2-A-Y-B-z 所表丁之化。物’式中’ A、8係、直鍵狀或是分枝鍵狀之碳 數卜5之伸院基,¥係或是〇中任—者,z係丽2、 〇H、Ν^ΝΗ2(此處D係、直鏈狀或是分枝鍵狀之填數丄〜5 之伸院基), 式(II) NH2-A-N(-B-〇h)2 B係與式(I)相同, 所表示之化合物,式中,A 式(ΠΙ) 13 1364632a compound represented by N~~R, wherein, a medium-sized system, an alkyl group having 1 to 5 carbon atoms, a hydroxyalkyl group having 1 to 5 carbon atoms, or an amino group having 1 to 5 carbon atoms; Gallic phenol; not in the group consisting of phenol, sputum, sputum, and gallic acid; and above, and one or more polar organic solvents. - 2: In the composition of the photoresist material stripping liquid of the present invention, when the water is not contained, the component contained in the stripping liquid reacts with water to exhibit alkalinity, which may corrode the side of the silver and enter the crystal. The problem of increasing the defect inside the grain_grain. That is, it can be known that the formula (1) NH2-AYBz is expressed in the form of 'A', 8 series, straight bond or branch key. The carbon number of the 5th, the extension of the yard base, the ¥ system or the middle of the —-, z-series 2, 〇H, Ν^ΝΗ2 (here D-line, linear or branch-shaped fillings 丄〜5的伸院基), Formula (II) NH2-AN(-B-〇h)2 B is the same as the formula (I), the compound represented by the formula, A formula (ΠΙ) 13 1364632

卜R 所表示之化合物,式中,R係Η、碳數1〜5之烷基、碳數 1〜5之羥基烷基或是碳數1〜5之胺基烷基, 選自由上述式(I)、式(II)、式(III)所組成群中之有機胺化合 物’能夠使用作為含有銀及/或銀合金之基板之光阻材料剝 離液組成物之成分。 此處’上述式(I)及式(II)中之Α及Β,因為若伸烷基鏈 的碳鏈長度太長時剝離性下降,太短時會腐蝕銀及銀合 金’所以係直鏈狀或是分枝狀、碳數為1〜5之伸院基,考 慮光阻材料剝離性及對銀之腐蝕性時,A及B之碳數以合 計2〜10為佳,以2〜6為更佳。 此等化合物之中,以二伸乙三胺、2_(2·胺基乙基胺基) 乙醇、2-(2-胺基乙基胺基)_2_丙醇、义(3_胺基丙基)_N_(2_ 羥基乙基)-2-胺基乙醇、2-(2-胺基乙氧基)乙醇、二伸丙三 胺、三伸乙四胺、嗎福林為佳。 又,有機胺化合物之含量,考慮光阻材料及光阻材料 變質層之剝離性能及對銀及銀合金之腐蝕性時,以2〇質量 %以上且5 0質量%以下為佳。 又,與式(I)、式(Π)、式(ΙΠ)所表示之有機胺化合物混 合之極性有機溶劑,可以舉出的有乙二醇單甲基醚、乙二 醇單乙基醚、乙二醇單丙基趟 醇單丁基醚、丙二醇單甲基醚 單丙基醚、丙二醇單丁基謎、 、乙二醇單丁基醚、二乙二 、丙二醇單乙基醚、丙二醇 二丙二醇單甲基醚、二丙二 14 1364632 醇單乙基 謎、二丙二醇單丙基謎、a compound represented by R, wherein R is hydrazine, an alkyl group having 1 to 5 carbon atoms, a hydroxyalkyl group having 1 to 5 carbon atoms or an aminoalkyl group having 1 to 5 carbon atoms, and is selected from the above formula ( I), the organic amine compound in the group of the formula (II) and the formula (III) can be used as a component of a resist material peeling liquid composition containing a substrate of silver and/or a silver alloy. Here, the enthalpy and enthalpy in the above formula (I) and formula (II), because if the carbon chain length of the alkyl chain is too long, the peeling property is lowered, and when it is too short, the silver and the silver alloy are corroded. Shaped or branched, carbon number is 1~5. When considering the peeling property of photoresist and the corrosiveness to silver, the carbon number of A and B is preferably 2~10, and 2~6 For better. Among these compounds, diethylenetriamine, 2-(2-aminoethylamino)ethanol, 2-(2-aminoethylamino)-2-propanol, and (3-aminopropyl) Preferably, _N_(2-hydroxyethyl)-2-aminoethanol, 2-(2-aminoethoxy)ethanol, diexexintriamine, triamethylenetetramine, or wort. Further, the content of the organic amine compound is preferably 2% by mass or more and 50% by mass or less based on the peeling performance of the photoresist layer and the photoresist layer and the corrosiveness to silver and a silver alloy. Further, examples of the polar organic solvent to be mixed with the organic amine compound represented by the formula (I), the formula (Π), and the formula (ΙΠ) include ethylene glycol monomethyl ether and ethylene glycol monoethyl ether. Ethylene glycol monopropyl sterol monobutyl ether, propylene glycol monomethyl ether monopropyl ether, propylene glycol monobutyl mystery, ethylene glycol monobutyl ether, diethylene glycol, propylene glycol monoethyl ether, propylene glycol Propylene glycol monomethyl ether, dipropylene II 14 1364632 alcohol monoethyl mystery, dipropylene glycol monopropyl mystery,

二 乙一醇二甲基醚、二丙二醇二甲基醚等醚系溶劑;曱醯胺、 單曱基甲醯胺、二甲基曱醯胺、單乙基甲醯胺、二乙基甲 醯胺、乙醯胺、單甲基乙醯胺、二甲基乙醯胺、單乙基乙 醯胺、二乙基乙醯胺等醯胺系溶劑;N-甲基_2_吡咯啶酮、 乙基-2-吡咯啶酮等η比洛啶酮系溶劑;曱醇、乙醇 '丙醇、 異丙醇、乙二醇、丙二醇等醇系溶劑;二甲基亞砜等亞砜 溶劑;1,3-二曱基-2-咪唑啶酮、二乙基_2_咪哇啶酮、 1’3-二異丙基_2_咪唑啶酮等咪唑啶酮系溶劑;γ 丁内酯、 7 -戊内酯等内酯系溶劑。 此等之中,以1,3_二甲基_2_咪唾啶酮、IS二乙基_2_ 咪唑啶酮、丨,3-二異丙基咪唑啶酮、Ν_甲基_2吡咯啶 酮、Ν-乙基-2-吡咯啶酮、二乙二醇單丁基醚、丙二醇、二 甲基亞砜為佳,從去除光阻材料變質層的觀點而言,以^ 二甲基-2-咪唑啶酮、二乙二醇單丁基醚、丙二醇、二曱基 -亞觸(為-更佳 又,含有式⑴、式(π)'式(m)所表示之有機胺化合物 和極性有機溶劑之本發明組成物,可以更添加胺基乙酸、 乙酸等有機酸、間苯三酚、間笨二酚、苯酚、苯并三唑、 兒茶酚、氫醌、沒食子酸、沒食子酸酯、五倍子酚等作為 防#劑。 又,本發明係一種光阻材料剝離液組成物,含有:單 乙醇胺,1種或2種以上之極性有機溶劑;選自由兒茶酚、 氫醌、五倍子酚、沒食子酸、沒食子酸酯所構成之群中丄 15 1364632 種或2種以上所組成之防钱劑。 但是,和兒茶酴、氫醌、五倍子酚、沒食子酸、沒食 子酸酯類似且以往作為光阻材料剝離液組成物之防蝕劑使 用之間苯二酚(1,3,5-二羥基苯)、間苯二酚(丨,3二羥基苯)、 苯酚、乙酸或胺基乙酸,即使與單乙醇胺一起添加,亦無 法改善對銀及銀合金之腐蝕性。 又,與單乙醇胺混合之極性有機溶劑,可以舉出的有: 乙二醇單曱基醚、乙二醇單乙基醚 '乙二醇單丙基醚、乙 二醇單丁基醚、二乙二醇單丁基醚、丙二醇單甲基醚、丙 一醇單乙基醚、丙一醇早丙基瞇、丙二醇單丁基趟、二丙 二醇單甲基酸、二丙二醇單乙基醚、二丙二醇單丙基醚、 —丙二醇單丁基謎、一乙二醇二甲基醚、二丙二醇二甲基 鍵等醚系溶劑;曱酿胺、單曱基曱醯胺、二甲基曱醜胺、 單乙基甲醯胺、二乙基曱醯胺'乙醯胺、單甲基甲醯胺、 二甲基甲酿胺、單乙基乙醯胺、二乙基乙醯胺等醯胺系溶 劑.;N-.甲.基-2-°比略咬_、N.-:.乙基,2-°比洛咬輞.等,β比洛.唆_系 溶劑;甲醇、乙醇、丙醇、異丙醇、乙二醇、丙二醇等醇 系溶劑,一曱基亞硬等亞硬系溶劑、1,3 -二曱基-2 -咪唾唆 嗣、1,3-二乙基-2-咪唑啶酮、1,3_二異丙基_2_咪唑啶_等 咪唑啶酮系溶劑;γ _ 丁内酯、r -戊内酯等内酯系溶劑。 其中以Ν-甲基-2-吡咯啶酮及/或1}3_二甲基_2_咪唑啶酿j為 佳。 以下顯示關於使用該光阻材料剝離液所製造之顯示裳 置。 16 1364632 [第1實施形態] 第1圖係顯示該顯示裝置之一剖面概略圖。 在玻璃基板11上’形成TFT 12、層間絕緣膜i 2 A及配 線 12B。 接著,在基板11全面,例如使用旋塗法形成平坦化層 使用曝光及顯像將平坦化層13依規定形狀形成圖案並 且形成連接孔13A。之後,為了使聚醯亞胺進行醯亞胺化, 在乾淨供爐中例如在3 2 0 °C的溫度焙燒。 接著,在平坦化層13上例如使用濺鍍法,例如以1〇〇nm 之尽度層積銀或疋銀合金來作為含有Ag之電極層14。 形成含有Ag之電極層14後,例如使用微影技術來製 k光阻遮罩,使用其來蝕刻含有Ag之電極層14。該蝕刻 可以藉由乾式姓刻或是濕式钱刻進行。 接者’使用光阻材料剝離液去除光阻。 接著’在基板π之全面,例如使用CVD(Chemical Vapor Deposition;化學氨相沈積.)法形成絕緣膜i5,使用 例如微影技術選擇性地去除在絕緣膜15中對應發光區域 的部分而形成開口部15 A。 接著,在絕緣膜15±面,在基板全面形成輔助 電極ΠΑ,並例如使用微影技術選擇性地進行姓刻,形成 規定圖案。 接著’例如使用蒸鑛法 具有開口之金屬製蒸鍍遮罩 膜。 ’形成有機層16。此時,使用 ’對著絕緣膜15之開口部而成 17 1364632 有機層16形成後, :,例如使用蒸鍍法在基板的全An ether solvent such as diethyl dimethyl ether or dipropylene glycol dimethyl ether; decylamine, monomethylcarbamide, dimethyl decylamine, monoethylformamide, diethylformamide , acetaminophen, monomethylacetamide, dimethylacetamide, monoethylacetamide, diethylacetamide, etc.; N-methyl-2-pyrrolidinone, B a 1,4-pyrrolidone solvent such as benzyl-2-pyrrolidone; an alcohol solvent such as decyl alcohol, ethanol 'propanol, isopropyl alcohol, ethylene glycol or propylene glycol; or a sulfoxide solvent such as dimethyl sulfoxide; Imidazolidinone solvent such as 3-dimercapto-2-imidazolidone, diethyl-2-imidazolidone, 1'3-diisopropyl-2-imidazolidinone; γ-butyrolactone, 7 a lactone solvent such as valerolactone. Among these, 1,3_dimethyl-2-imidinone, IS diethyl-2-imidazolidinone, indole, 3-diisopropylimidazolidinone, and Ν-methyl-2-pyrrole Pyridone, oxime-ethyl-2-pyrrolidone, diethylene glycol monobutyl ether, propylene glycol, dimethyl sulfoxide is preferred, from the viewpoint of removing the altered layer of the photoresist material, 2-imidazolidinone, diethylene glycol monobutyl ether, propylene glycol, dimercapto-sub-contact (more preferably, an organic amine compound represented by formula (1), formula (π)' (m) The composition of the present invention and a polar organic solvent may further contain an organic acid such as aminoacetic acid or acetic acid, phloroglucinol, m-diphenol, phenol, benzotriazole, catechol, hydroquinone, gallic acid. Further, the gallic acid ester, the gallic phenol, and the like are used as an anti-agent. The present invention is a photoresist material stripping liquid composition comprising: monoethanolamine, one or more polar organic solvents; selected from the group consisting of catechol An anti-money agent composed of hydroquinone, gallic phenol, gallic acid, gallic acid ester, or 15 or more kinds of anti-money agents. However, with catechins, hydroquinones, and Resorcinol (1,3,5-dihydroxybenzene), resorcinol, which is similar to the anti-corrosive agent of the resistive material stripping solution. (丨, 3 dihydroxybenzene), phenol, acetic acid or aminoacetic acid, even if added together with monoethanolamine, can not improve the corrosiveness to silver and silver alloy. Also, the polar organic solvent mixed with monoethanolamine can be exemplified There are: ethylene glycol monodecyl ether, ethylene glycol monoethyl ether 'ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, Propyl alcohol monoethyl ether, propanol early propyl hydrazine, propylene glycol monobutyl hydrazine, dipropylene glycol monomethyl acid, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, propylene glycol monobutyl mystery, An ether solvent such as monoethylene glycol dimethyl ether or dipropylene glycol dimethyl bond; an amine, monodecyl decylamine, dimethyl guanamine, monoethylformamide, diethyl hydrazine Amidoxime solvent such as amine 'acetamide, monomethylformamide, dimethylamine, monoethylacetamide, diethylacetamide. N-.A. base-2-° ratio slightly biting _, N.-:.ethyl, 2-° 洛洛辋. etc., β 比洛.唆_ solvent; methanol, ethanol, propanol, iso An alcohol solvent such as propanol, ethylene glycol or propylene glycol; a hardening solvent such as a sulfhydryl group; 1,3 -dimercapto-2-imidinium, 1,3-diethyl-2-imidazole a solvent such as ketone, 1,3-diisopropyl-2-imidazolium or the like; a lactone solvent such as γ-butyrolactone or r-valerolactone; wherein Ν-methyl-2- Pyrrolidone and/or 1}3-dimethyl-2-imidazole pyridine is preferred. The following shows the display of the photoresist produced by using the resist release liquid. 16 1364632 [First embodiment] 1st The figure shows a schematic cross-sectional view of one of the display devices. The TFT 12, the interlayer insulating film i 2 A and the wiring 12B are formed on the glass substrate 11. Next, the substrate 11 is entirely formed, for example, by using a spin coating method to form a planarization layer. The planarization layer 13 is patterned in a predetermined shape by exposure and development, and a connection hole 13A is formed. Thereafter, in order to carry out the oxime imidization of the polyimide, it is calcined in a clean furnace, for example, at a temperature of 3 2 °C. Next, as the electrode layer 14 containing Ag, for example, a sputtering method is used, for example, a silver plating or a lanthanum silver alloy is laminated on the planarizing layer 13 at a thickness of 1 〇〇 nm. After the electrode layer 14 containing Ag is formed, a photoresist mask is formed, for example, using a lithography technique, and the electrode layer 14 containing Ag is etched therewith. The etching can be performed by dry or wet money. The picker uses a photoresist stripping solution to remove the photoresist. Then, the insulating film i5 is formed in a comprehensive manner of the substrate π, for example, by a CVD (Chemical Vapor Deposition) method, and an opening is formed by selectively removing a portion of the insulating film 15 corresponding to the light-emitting region using, for example, a lithography technique. Part 15 A. Next, on the insulating film 15± surface, the auxiliary electrode 全面 is formed over the entire substrate, and the pattern is selectively formed by, for example, lithography to form a predetermined pattern. Next, for example, a vapor-deposited metal film having an opening is used. The organic layer 16 is formed. At this time, after the organic layer 16 is formed by using the opening portion facing the insulating film 15, the organic layer 16 is formed, for example, by using a vapor deposition method on the entire substrate.

助電極》 面形成 電連接於已形成之輔助 硬化性樹脂構成之黏著層3 〇 接著,在基板11之形成有機層16那側塗布形成由熱 ’與密封用基板21貼合而完 成顯示裝置。 該顯示裝置係例如在含有Ag之電極層14與共用電極 1 7之間施加規定電壓時,有機層丨6開始發光。 藉由使用本發明之光阻材料剝離液,可以在不腐蝕· 之下剝離光阻。因此,和習知剝離液比較時,起因於八容 腐姓之旦素缺陷約減為1/10而提升了顯示元件之信賴性。 [第2實施形態] ; 第2圖係有關本發明第2實施形態之顯示裝置之剖面 結構。 該顯示裝置係使用作為穿透型反射型並用(半穿透型) 之液晶顯示-器,相向地.配置有驅貪扳6〇和對向板7〇,在 φ 其間設置有液晶80。驅動板60在由玻璃所構成之基板61 上矩陣狀地設置有晝素電極62。在基板61形成有主動型 驅動電路,該主動型驅動電路包含TFT63及配線63Α等來 作為電連接於畫素電極62之驅動元件。 在基板61之與液晶80相向側,全面設置有定向膜64, 在相反側設置有偏光板65。 晝素具有畫素電極62和含有Ag之電極層14。晝素電 極62例如是由ITO所構成,含有Ag之電極層14係由含 18 有銀或是銀合金之層所構成。含有Ag之電極層i4,係形 、為重宜於畫素電極62之_部分區域。形成有含有Ag之 ^ 14之區域,會成為反射型顯示區域,畫素電極62 _未重疊於含有Ag之電極層Μ之區域,則成為透過型顯 示區域。 TFT63之閘極(圖中未顯示)係連接於圖中未顯示之掃 描電路,源極(圖中未顯示)係連接於當作信號線之配線 63A’汲極(圖中未顯示)係連接於畫素電極α。配線μα 之材料和帛1實施形態之配線13B同樣。又,TFT63之構 成和第!實施形態之TF 丁㈣樣,沒有特別的限定。抓63 及配線63A被覆有例如由二氧切(Si〇2)或是氮化邦叫 所構成之保護膜63B。 定向膜64係使用例如摩擦(定向)處理聚酿亞胺等有機 化合物而成之膜。此時,藉由變更摩擦條件可以控制預傾 角(pretilt angle)。The surface of the auxiliary electrode is electrically connected to the adhesive layer 3 formed of the auxiliary curable resin. Next, the side of the substrate 11 on which the organic layer 16 is formed is coated with heat to be bonded to the sealing substrate 21 to complete the display device. In the display device, for example, when a predetermined voltage is applied between the electrode layer 14 containing Ag and the common electrode 17, the organic layer 丨6 starts to emit light. By using the photoresist release liquid of the present invention, the photoresist can be peeled off without corrosion. Therefore, when compared with the conventional stripping solution, the reliability of the display element is improved by the fact that the defect of the eight-nose rot is reduced to about 1/10. [Second Embodiment] Fig. 2 is a cross-sectional view showing a display device according to a second embodiment of the present invention. In the display device, a liquid crystal display device which is a transflective type (semi-transmissive type) is used, and a repellent plate 6 and a counter plate 7 are disposed opposite to each other, and a liquid crystal 80 is provided between φ. The drive plate 60 is provided with a halogen electrode 62 in a matrix on a substrate 61 made of glass. An active type driving circuit is formed on the substrate 61. The active type driving circuit includes a TFT 63, a wiring 63, and the like as a driving element electrically connected to the pixel electrode 62. An alignment film 64 is provided on the opposite side of the substrate 61 from the liquid crystal 80, and a polarizing plate 65 is provided on the opposite side. The halogen has a pixel electrode 62 and an electrode layer 14 containing Ag. The halogen electrode 62 is made of, for example, ITO, and the electrode layer 14 containing Ag is composed of a layer containing 18 silver or a silver alloy. The electrode layer i4 containing Ag is shaped to be a part of the region of the pixel electrode 62. A region containing Ag 14 is formed as a reflective display region, and the pixel electrode 62_ is not overlapped with the region of the electrode layer containing Ag, and becomes a transmissive display region. The gate of the TFT 63 (not shown) is connected to a scanning circuit not shown in the drawing, and the source (not shown) is connected to the wiring 63A' which is a signal line (not shown). In the pixel electrode α. The material of the wiring μα is the same as the wiring 13B of the first embodiment. Also, the composition of the TFT63 and the first! The TF (four) sample of the embodiment is not particularly limited. The catch 63 and the wiring 63A are covered with a protective film 63B made of, for example, dioxo (Si〇2) or nitrided. The alignment film 64 is formed by, for example, rubbing (orientating) an organic compound such as polyienimine. At this time, the pretilt angle can be controlled by changing the friction condition.

偏光板65係可以將來自.圖中未顯示之背光源之光線 轉變成-定方向之直線偏光之光學元件,例如可以含有聚 乙烯醇(PVA)薄膜等而構成。 對向板70係位於驅動板6〇之晝素電極以側,具有由 玻璃等所構成之對向基板71。 v穴里尔包怔相向, 電極72和濾色器73係從對向基板71側起依順序層 又,在對向基板,沿著彩色濾光器乃的邊% 有光吸收膜74作為黑矩陣。在對向基板71之與液晶 19 Γ364632 向側,全面設置有定向膜75,相反側設置有偏光板%。 透明電極72例如可以由IT〇構成。 光吸收膜74係吸收入射至對向基板7之外光或是從配 線64反射之外光的反射光等以提升對比之物,例如可以由 添加有黑色著色劑、氺風、曾# , 尤予濃度達到1以上的黑色樹脂膜, 或疋由利用薄膜的干涉之薄膜濾光器所構成。薄膜濾光器 係例如層積一層以上之由金屬、金屬氮化物或是金屬氧化 物所構成之薄膜,以利用薄膜之干涉來減弱光線之物。 薄媒遽光器具體上可以舉出的有交互地層積絡及氧化 鉻(in)(cr2〇3)而成之物。定向膜75及偏光板%之構成係 與驅動板60之定向膜64及偏光板65相同。 液晶80係藉由施加電壓來改變其定向狀態而使其穿 透率改變之物。因為驅動時若液晶分子之傾斜方向不一樣 時會發生明暗不均’為了避免此情形,所以事域予液晶 80稍許之一定方向的預傾角。 該顯.示裝置例如可以.如下製.造。 首先,在基板61上例如以濺鍍法進行成膜,形成晝素 電極62及含有Ag之電極層14。接著,使用微影步驟形成 光阻圖案。 接著,藉由使用光阻材料所形成之圖案作為遮罩,來 進行電極層14之蝕刻。蝕刻可以使用以藥液進行之濕式蝕 刻、或是使用乾式蝕刻。接著,使用第丨實施形態所述之 光阻材料剝離液來去除光阻。 為了進而形成畫素電極62之圖案,同樣地形成光阻圖 20 1364632 案’蝕刻後以上述之光阻材料剝離液去除光阻。 接著,形成TFT63及配線63Α,使用保護膜63Β被覆。 八後,在基板61之全面形成定向膜64,進行摩擦處理。 藉此,形成驅動板60。 又,在對向基板71之表面形成有透明電極72、光吸 收膜74及彩色濾光器73。接著,在對向基板71之全面形 成定向膜75,進行摩擦處理。藉此,形成對向板7〇。 接著’在驅動板60或是對向板70之周圍部設置例如 由環氧樹脂等所構成之片材(圖中未顯示)、或是球狀或柱 狀之間隔物(圖中未顯示)。接著調整驅動板6〇及對向板 7〇 ’使畫素電極62及透明電極72呈相向之位置,藉由使 在'封材硬化而黏貼在一起,將液晶80注入内部而密封。接 著’分別在驅動板60上貼上偏光板65、在對向板70上貼 上偏光板76。藉由上述,完成第2圖所示之顯示裝置。 藉由使用本發明之光阻材料剝離液,可以消除對含有 Ag之電極層14(作為反射膜)表面的腐蝕,而提.升_起,因於腐 餘等所造成反射率降低之顯示裝置之可信賴性。 (實施例) 以下’舉出實施例及比較例更詳細地說明本發明,但 是本發明並不限定於此等實施例。 1.含有式(I)、式(II)、式(III)所表示之化合物和極性有機溶 劑之非水系光阻材料剝離液 (1)光阻材料及光阻材料變質層剝離性評價 在玻璃基板上成膜形成銀合金,以在銀合金上面塗 21 1364632 布、曝光、顯像而成之光阻材料作為遮罩,進行乾式钱刻、 形成圖案’得到光阻材料及光阻材料變質層剝離性評價基 板。接著,將該基板浸潰於70 °C之光阻材料剝離液中1〇 分鐘後,用超純水沖洗處理後,使用氮氣流乾燥後,使用 光學顯微鏡及電子顯微鏡進行光阻材料及光阻材料剝離性 評價。其結果如表1所示。 (2)對銀及銀合金之腐蝕性評價 在玻璃基板上成膜形成銀合金,得到對銀合金腐钱性 評價基板。接著’將該基板浸潰於7(TC之光阻材料剝離液 中10分鐘後,用超純水沖洗處理後,使用氮氣流乾燥後, 使用光學顯微鏡及電子顯微鏡進行對銀合金之腐钱性評 價。其結果如表1所示。The polarizing plate 65 is an optical element that can convert light from a backlight (not shown) into a linearly polarized light in a predetermined direction, and can be formed, for example, by containing a polyvinyl alcohol (PVA) film or the like. The counter plate 70 is located on the side of the halogen electrode of the drive plate 6A, and has a counter substrate 71 made of glass or the like. The v-holes are opposite to each other, and the electrodes 72 and the color filters 73 are sequentially arranged from the opposite substrate 71 side, and in the opposite substrate, along the side of the color filter, there is a light absorbing film 74 as black. matrix. On the side of the counter substrate 71 opposite to the liquid crystal 19 Γ 364632, an alignment film 75 is provided on the entire side, and on the opposite side, a polarizing plate % is provided. The transparent electrode 72 can be composed of, for example, IT〇. The light absorbing film 74 absorbs light that is incident on the light other than the opposite substrate 7 or reflected from the wiring 64 to enhance the contrast, and may be added, for example, by adding a black colorant, a hurricane, a hurricane, and a The black resin film having a concentration of 1 or more is used, or the film is made of a film filter which uses interference of the film. The thin film filter is, for example, a film in which one or more layers of metal, metal nitride or metal oxide are laminated to reduce the light by the interference of the film. Specifically, the thin medium calender can be exemplified by an interactive formation and chromium (in) (cr2〇3). The alignment film 75 and the polarizing plate % are the same as the alignment film 64 and the polarizing plate 65 of the drive plate 60. The liquid crystal 80 changes its orientation state by applying a voltage to change its permeability. Since the liquid crystal molecules are not tilted in the same direction when driving, light and dark unevenness may occur. To avoid this, the liquid crystal 80 has a slightly pretilt angle in a certain direction. The display device can be manufactured, for example, as follows. First, a film is formed on the substrate 61 by sputtering, for example, to form a halogen electrode 62 and an electrode layer 14 containing Ag. Next, a photoresist pattern is formed using a lithography step. Next, etching of the electrode layer 14 is performed by using a pattern formed of a photoresist as a mask. The etching may be performed by wet etching with a chemical solution or by dry etching. Next, the photoresist is removed by using the photoresist peeling liquid described in the second embodiment. In order to further form the pattern of the pixel electrode 62, the photoresist pattern 20 1364632 is similarly formed. After the etching, the photoresist is removed by the above-mentioned photoresist material stripping solution. Next, the TFT 63 and the wiring 63 are formed and covered with a protective film 63. After eight, the alignment film 64 is formed on the entire surface of the substrate 61, and rubbing treatment is performed. Thereby, the drive plate 60 is formed. Further, a transparent electrode 72, a light absorbing film 74, and a color filter 73 are formed on the surface of the counter substrate 71. Next, the alignment film 75 is entirely formed on the opposite substrate 71, and rubbing treatment is performed. Thereby, the opposing plate 7 is formed. Then, a sheet made of, for example, epoxy resin (not shown) or a spherical or columnar spacer (not shown) is provided around the driving plate 60 or the facing plate 70. . Then, the driving plate 6A and the opposing plate 7'' are adjusted so that the pixel electrode 62 and the transparent electrode 72 are opposed to each other, and the liquid crystal 80 is injected into the inside and sealed by being adhered to the sealing material. Next, a polarizing plate 65 is attached to the driving plate 60, and a polarizing plate 76 is attached to the opposing plate 70. By the above, the display device shown in Fig. 2 is completed. By using the photoresist material stripping liquid of the present invention, it is possible to eliminate the corrosion of the surface of the electrode layer 14 containing Ag (as a reflective film), and to increase the reflectance due to the corrosion, etc. Trustworthiness. (Examples) Hereinafter, the present invention will be described in more detail by way of Examples and Comparative Examples. However, the present invention is not limited thereto. 1. A non-aqueous photoresist material stripping solution containing the compound represented by the formula (I), the formula (II), and the formula (III) and a polar organic solvent (1) Photoresist material and a photoresist layer. A silver alloy is formed on the substrate, and a photoresist material which is coated with 21 1364632 cloth, exposed and developed on the silver alloy is used as a mask to perform dry etching and patterning to obtain a photoresist layer and a photoresist layer. The substrate was evaluated for peelability. Then, the substrate was immersed in a photoresist solution of 70 ° C for 1 minute, and then rinsed with ultrapure water, dried with a nitrogen stream, and then subjected to an optical microscope and an electron microscope for photoresist and photoresist. Material peelability evaluation. The results are shown in Table 1. (2) Evaluation of Corrosion of Silver and Silver Alloy A silver alloy was formed on a glass substrate to obtain a substrate for evaluation of the corrosion resistance of the silver alloy. Then, the substrate was immersed in 7 (TC photoresist material stripping solution for 10 minutes, rinsed with ultrapure water, dried with a nitrogen stream, and then subjected to the rot of silver alloy using an optical microscope and an electron microscope. The results are shown in Table 1.

22 136463222 1364632

^_I A , 一 h_yu > χυ I (g)-- ^1 DGA二乙二醇胺=2-(2-胺基乙氧基)乙醇、 ,:N-(2-胺基乙基)異丙醇胺=1-(2-胺基乙基胺基>2丄J基j溫I & °比咯啶酮、BCA·.丁基卡必醇、PG:丙二醇、DMS’O·二唾咬明、^^:仏甲基_2-Ϋ2 ◎:可去除、〇:僅殘留少許X:無法去除 峨 化、〇:一·魅發生變色、光澤度變化、一都秘攻眩綱 23 1364632 2.含有:單乙醇胺;極性有機溶劑;選自由兒茶酚、氫醌、 五倍子酚、·沒食子酸、沒食子酸酯所組成群中1種或是2 種以上所構成防蝕劑之非水系光阻材料剝離液組成物 有關本組成物之光阻材料去除性、對銀合金之腐蝕性,和 1同樣地實驗評價,其結果如表2所示。 [表2]^_I A , a h_yu > χυ I (g)-- ^1 DGA diethylene glycol amine = 2-(2-aminoethoxy)ethanol, , :N-(2-aminoethyl) Propylamine = 1 - (2-aminoethylamino) > 2 丄 J based j temperature I & ° specific ratio of bromo ketone, BCA · butyl carbitol, PG: propylene glycol, DMS 'O · two Sputum bite, ^^: 仏Methyl-2-Ϋ2 ◎: Can be removed, 〇: only a little left X: Can not remove sputum, 〇: 1. Charm discoloration, gloss change, one secret glare 23 1364632 2. Contains: monoethanolamine; polar organic solvent; selected from the group consisting of catechol, hydroquinone, gallic phenol, gallic acid, gallic acid ester, or two or more kinds of corrosion inhibitors The non-aqueous photoresist material stripping liquid composition was evaluated in the same manner as in the photoresist removal property of the present composition and the corrosion resistance to the silver alloy, and the results are shown in Table 2. [Table 2]

編號 光阻材料剝離液組成(質量%) 評價結i 光阻 光阻 對銀 材料 材料 合金 成分(1) 成分(2) 成分(3) 成分(4) 剝離 變質 之腐 性 層剝 钱性 離性 實施例24 ΜΕΑ30 ΝΜΡ45 DMI 25 兒茶酚(1) ◎ ◎ ◎ 實施例25 ΜΕΑ30 ΝΜΡ45 DMI 25 氫酿⑴ ◎ ◎ ◎ 實施例26 ΜΕΑ30 ΝΜΡ45 DMI 25 沒食子酸(1) ◎ ◎ ◎ 實施例27 ΜΕΑ30 ΝΜΡ45 DM 25 沒食子酸-正十二酯(1) ◎ ◎ ◎ 實施例28 ΜΕΑ30 ΝΜΡ45 DMI 25 五倍子紛(1) ◎ ◎ ◎ 比較例10 ΜΕΑ30 ΝΜΡ45 DMI 25 - ◎ ◎ X 比較例11 ΜΕΑ30 ΝΜΡ45 DMI 25 胺基乙酸(1) ◎ ◎ X 比較例12 ΜΕΑ30 ΝΜΡ45 DMI 25 乙酸(1) ◎ ◎ X 比較例13 ΜΕΑ30 ΝΜΡ45 DMI 25 間苯三酚(1) ◎ ◎ X 比較例14 ΜΕΑ30 ΝΜΡ45 DMI 25 間苯二酚(1) ◎ ◎ X 比較例15 ΜΕΑ30 ΝΜΡ45 DMI 25 苯盼⑴ ◎ ◎ X 比較例16 ΜΕΑ30 ΝΜΡ45 DMI 25 1,2,3-苯并三。坐(1) ◎ ◎ XNo. Photoresist material stripping liquid composition (% by mass) Evaluation junction i Photoresist to silver alloy material Alloy composition (1) Component (2) Component (3) Component (4) Peeling and deteriorating molybdenum stripping property Example 24 ΜΕΑ30 ΝΜΡ45 DMI 25 catechol (1) ◎ ◎ ◎ Example 25 ΜΕΑ30 ΝΜΡ45 DMI 25 Hydrogenation (1) ◎ ◎ ◎ Example 26 ΜΕΑ30 ΝΜΡ45 DMI 25 Gallic acid (1) ◎ ◎ ◎ Example 27 ΜΕΑ30 ΝΜΡ45 DM 25 gallic acid-n-dodecyl ester (1) ◎ ◎ ◎ Example 28 ΜΕΑ30 ΝΜΡ45 DMI 25 Galla chinensis (1) ◎ ◎ ◎ Comparative Example 10 ΜΕΑ30 ΝΜΡ45 DMI 25 - ◎ ◎ X Comparative Example 11 ΜΕΑ30 ΝΜΡ45 DMI 25 Aminoacetic acid (1) ◎ ◎ X Comparative Example 12 ΜΕΑ30 ΝΜΡ45 DMI 25 acetic acid (1) ◎ ◎ X Comparative Example 13 ΜΕΑ30 ΝΜΡ45 DMI 25 phloroglucinol (1) ◎ ◎ X Comparative Example 14 ΜΕΑ30 ΝΜΡ45 DMI 25 Benzene Diphenol (1) ◎ ◎ X Comparative Example 15 ΜΕΑ30 ΝΜΡ45 DMI 25 Benzine (1) ◎ ◎ X Comparative Example 16 ΜΕΑ30 ΝΜΡ45 DMI 25 1,2,3-Benzotriene. Sitting (1) ◎ ◎ X

[產業上之可利用性] 藉由使用本發明之光阻材料剝離液,對銀及銀合金不 發生腐蝕、可以剝離對銀及銀合金進行蝕刻後之光阻材 料、而且可以剝離乾式蝕刻後之光阻材料變質層,因此, 可以製造一種以銀及銀合金作為金屬反射膜使用之有機 EL顯示器。 24 1364632 【圖式簡單說明】 第1圖係本發明顯示裝置之第1實施形態之一剖面概略®。 第2圖係本發明顯示裝置之第2實施形態之一剖面概略圖。 【主要元件符號說明】 11 玻璃基板 12 TFT 12A層間絕緣膜 12B 配線 13 平坦化層 1 3 A連接孔 14 電極層 15 絕緣膜 15A開口部 16 有機層 17 共用電極 17A輔助電極 21 密封電極 30 黏著層 60 驅動板 61 基板 62 晝素電極 63 TFT 63A配線 63B 保護膜 64 定向膜 65 偏光板 70 對向板 71 對向基板 72 透明電極 73 彩色濾光器 74 光吸收膜 75 定向膜 76 偏光板 80 液晶 25[Industrial Applicability] By using the photoresist material stripping liquid of the present invention, the silver and the silver alloy are not corroded, the photoresist material after etching the silver and the silver alloy can be peeled off, and the dry etching can be removed. Since the photoresist material is deteriorated, an organic EL display using silver and a silver alloy as a metal reflective film can be manufactured. 24 1364632 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of a first embodiment of the display device of the present invention. Fig. 2 is a schematic cross-sectional view showing a second embodiment of the display device of the present invention. [Description of main component symbols] 11 Glass substrate 12 TFT 12A interlayer insulating film 12B wiring 13 Flattening layer 1 3 A connection hole 14 Electrode layer 15 Insulating film 15A opening portion 16 Organic layer 17 Common electrode 17A Auxiliary electrode 21 Sealing electrode 30 Adhesive layer 60 drive board 61 substrate 62 halogen electrode 63 TFT 63A wiring 63B protective film 64 orientation film 65 polarizing plate 70 opposite plate 71 opposite substrate 72 transparent electrode 73 color filter 74 light absorbing film 75 alignment film 76 polarizing plate 80 liquid crystal 25

Claims (1)

Γ364632 七、申請專利範圍: 1 · 一種光阻材料剝離液組成物,其係含有銀及/或銀合金 之基板的光阻材料剝離液組成物,其特徵為, 含有:選自由 -式(I) ΝΗ2-Α-Υ-Β-Ζ 所表不之化合物,式中,a、b係分別相互獨立為直鏈狀或 是分枝鏈狀之碳數1〜5之伸烷基,γ係NH或是〇中任一 者,Z係NH2、OH、NH-D-NH2(此處D係直鏈狀或是分枝 鏈狀之碳數1~5之伸烷基), —式(II) ΝΗ2-Α-Ν(-Β-0Η)2 所表示之化合物,式中’ A、B係與式(I)相同,以及, -式(III)Γ 364632 VII. Patent application scope: 1 . A composition of a photoresist material stripping liquid, which is a photoresist material stripping liquid composition containing a substrate of silver and/or a silver alloy, characterized in that it comprises: selected from the formula (I) ΝΗ2-Α-Υ-Β-Ζ The compound represented by the formula, wherein a and b are each independently linear or branched, and the alkyl group having a carbon number of 1 to 5, γ-form NH Or any of the bismuth, Z series NH2, OH, NH-D-NH2 (where D is a linear or branched chain carbon number of 1 to 5 alkyl groups), - (II)化合物2-Α-Ν(-Β-0Η)2 is a compound represented by the formula 'A, B is the same as formula (I), and - is formula (III) 所表示之化合物’式中,尺係H、碳數1〜5之烷基、碳數 1〜5之經基烧基或是瑞數之胺基烧基, 所組成之群中1種或2種以上;和 1種或2種以上之極性有機溶劑, 該光阻材料剝離液組成物係非水系,且該極性有機溶 劑係選自由醚系溶劑、醯胺系溶劑、吡咯啶酮系溶劑、醇 系溶劑、亞颯溶劑、咪唑啶酮系溶劑及内酯系溶劑所組成 之群, 該式(I)、式(II)或式(III)所表示之化合物的總含量係2〇 質量%以上且50質量%以下。 26 1364632 2.如中料料圍第1項所述之光輯㈣料組成物, 其中式⑴、式⑻或式(111)所表示之化合物係二伸乙三 胺、2-(2-胺基乙基胺基)乙醇 醇、N-(3-胺基丙基)_N-(2-經基 基乙氧基)乙酵、二伸丙三胺、 1 2-(2-胺基乙基胺基)_2_丙 乙基)-2-胺基乙醇、2-(2-胺 三伸乙四胺、嗎福林。 3.如申請專利範㈣丨或2項所述之光阻材料剝離液組成 物,其中該極性有機溶劑係選自丨㈣ 酮、二乙二醇單頂、丙二醇、二甲基亞颯及N-甲基-2_ 吡咯啶酮所組成之群中丨種或2種以 4· -種光阻材料剝離液组成物,其係、含有銀及/或銀合金 之基板的光阻材料剝離液組成物,其中 含有.早乙醇胺;選自由兒茶紛、氮酿、五倍子紛、 沒食子酸及沒食子制所組成之群中i種或2種.以上;和 1種或2種以上之極性有機溶劑, 該光阻材料剝離液組成物係非水系,且該極性有機溶 劑係選自由醚系溶劑、醯胺系溶劑、吡咯啶酮系溶劑、醇 系洛劑、亞颯溶劑、咪唑啶酮系溶劑及内酯系溶劑所組成 之群。 .如申印專利範圍第4項所述之光阻材料剝離液組成物, 其中該極性溶劑係N_曱基_2_吡咯啶酮及/或二甲基 27 1364632 咪唾咬綱。 6. —種銀及/或銀合金之圖案形成方法,其特徵為,含有: 在基板上規定區域上形成由銀及/或銀合金所構成金屬反 射膜或反射電極之步驟;使用光阻材料在該金屬反射膜或* 是反射電極上形成遮罩之步驟;蝕刻非遮罩區域之該金屬 反射膜或是反射電極之步驟;以及使用如申請專利範圍第 至5項中任項所述之光阻材料剝離液組成物將該光阻 材料從該金屬反射臈或是反射電極上剝離之步驟。 參 7·如申睛專利範圍第6項所述之銀及/或銀合金之圖案形 、 成方法,其中蝕刻步驟係乾式蝕刻。 . 8· —種具備由銀及/或銀合金所構成之反射膜或是反射電極 之顯示裝|的製造方&,該顯示裝置在基板上具備有複數 個顧示元件,其特徵為,前述顯示元件係藉由在基板上形_ 成含有銀及/或銀合金之層後,在該層積而成之膜上使用光 阻材料形成遮罩,使用該遮罩來蝕刻前述層積而成之膜, 使用如申請專利範圍第!至5項中任一項所述之光阻材料 剝離液組成物將前述形成有遮罩之光阻材料剝離而形成。 9.如申凊專利範圍第8項所述之顯示裝置的製造方法,其 中該顯示元件,係在由銀及/或銀合金所構成之反射膜或反 射電極上,依照順序層積含有發光層之有機層及電極,並 28 丄北4632 由電極側透出在該發光層所發生的光線 件。 有機發光元 ίο.如申請專利範圍第8項所述之顯示裝置的製造方法, 其中該顯示元件,係在基板設有晝素電極、電連接該晝素 電極之驅動元件及配線,在該基板與該驅動元件及配線之 間設置有由銀及/或銀合金所構成之反射膜或是反射電極 而成之液晶顯示元件。 29In the compound represented by the formula, the genus H, the alkyl group having 1 to 5 carbon atoms, the ketone group having a carbon number of 1 to 5 or the amine group of the ruthenium group, one or two of the group consisting of And one or more polar organic solvents, the photoresist material stripping liquid composition is non-aqueous, and the polar organic solvent is selected from the group consisting of an ether solvent, a guanamine solvent, and a pyrrolidone solvent. a group consisting of an alcohol solvent, an anthraquinone solvent, an imidazole ketone solvent, and a lactone solvent, and the total content of the compound represented by the formula (I), the formula (II) or the formula (III) is 2% by mass. The above is 50% by mass or less. 26 1364632 2. The composition of the light (four) material as described in Item 1 of the middle material, wherein the compound represented by formula (1), formula (8) or formula (111) is diethylenetriamine, 2-(2-amine Ethylethylamine)ethanol alcohol, N-(3-aminopropyl)-N-(2-carbylethoxy)ethylation, di-extension propylenetriamine, 1- 2-(2-aminoethyl) Amino) 2 -propanyl)-2-aminoethanol, 2-(2-amine-triethylenetetramine, fluolin. 3. Stripping of the photoresist as described in claim 4 (4) or 2 a liquid composition, wherein the polar organic solvent is selected from the group consisting of ruthenium (tetra) ketone, diethylene glycol monotop, propylene glycol, dimethyl hydrazine, and N-methyl-2-pyrrolidone a photoresist composition for stripping photoresist, which is a photoresist material stripping liquid composition containing a substrate of silver and/or a silver alloy, containing early ethanolamine; selected from the group consisting of tea, nitrogen, and gallnut Any one or two or more of the group consisting of gallic acid and gallic acid, and one or more polar organic solvents, the photoresist material stripping liquid composition is non-aqueous, and Polar organic solvent is selected from a group consisting of an ether solvent, a guanamine solvent, a pyrrolidone solvent, an alcoholic agent, a sulfonium solvent, an imidazolidinone solvent, and a lactone solvent. The photoresist material stripping liquid composition, wherein the polar solvent is N_mercapto-2-pyrrolidone and/or dimethyl 27 1364632. 6. Patterning of silver and/or silver alloy The method comprises the steps of: forming a metal reflective film or a reflective electrode made of silver and/or a silver alloy on a predetermined region on a substrate; forming a mask on the metal reflective film or * as a reflective electrode using a photoresist material a step of etching the metal reflective film or the reflective electrode in the non-mask region; and using the photoresist material stripping liquid composition according to any one of claims 5 to 5 to remove the photoresist material The metal reflection 臈 or the step of peeling off the reflective electrode. The method and method for forming a silver and/or a silver alloy according to claim 6 of the patent application scope, wherein the etching step is dry etching. - species with silver and / or silver A display device of a reflective film or a reflective electrode made of gold, the display device having a plurality of display elements on a substrate, wherein the display element is formed on a substrate After a layer containing silver and/or a silver alloy is used, a mask is formed on the laminated film by using a photoresist, and the laminated film is etched using the mask, and the application is as follows: The photoresist material stripping liquid composition according to any one of the items 5, wherein the photoresist device is formed by peeling off the masking material. The display element is formed by laminating an organic layer and an electrode including a light-emitting layer on a reflective film or a reflective electrode made of silver and/or a silver alloy, and 28 丄北4632 is exposed from the electrode side to the light-emitting layer. The light that happened. The manufacturing method of the display device according to claim 8, wherein the display element is provided with a halogen electrode on the substrate, a driving element electrically connecting the halogen electrode, and a wiring on the substrate A liquid crystal display element in which a reflective film or a reflective electrode made of silver and/or a silver alloy is provided between the driving element and the wiring is provided. 29
TW93125879A 2003-08-28 2004-08-27 Photoresist removing liquid compositions for the substrate containing ag and/ or ag alloy, process for making aptterns made from these, and process for making display units containing them TWI364632B (en)

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007536566A (en) * 2004-05-07 2007-12-13 ドウジン セミケム カンパニー リミテッド (Photo) Composition for resist removal
KR101082018B1 (en) * 2004-05-07 2011-11-10 주식회사 동진쎄미켐 Composition for removing a (photo)resist
WO2007029767A1 (en) * 2005-09-09 2007-03-15 Tokyo Ohka Kogyo Co., Ltd. Washing agent for photolithography and method of forming photoresist pattern using the same
JP5143731B2 (en) * 2006-06-21 2013-02-13 出光興産株式会社 Stripping composition, method for producing TFT substrate, and recycling method for stripping composition
KR101403515B1 (en) * 2006-06-22 2014-06-09 주식회사 동진쎄미켐 Composition for removing photoresist
KR101292497B1 (en) * 2007-01-12 2013-08-01 동우 화인켐 주식회사 Resist stripper composition and stripping method of resist using the same
JP2008262960A (en) * 2007-04-10 2008-10-30 Daisho Denshi:Kk Organic wiring substrate for mounting light emitting device and its manufacturing method
JP5302334B2 (en) * 2008-11-28 2013-10-02 出光興産株式会社 Anticorrosive photoresist stripper composition
KR20110053557A (en) * 2009-11-16 2011-05-24 동우 화인켐 주식회사 A resist stripper composition
KR102414295B1 (en) * 2016-01-22 2022-06-30 주식회사 이엔에프테크놀로지 Photoresist stripper composition
JP6905421B2 (en) * 2017-08-28 2021-07-21 株式会社ジャパンディスプレイ Display device
KR102528302B1 (en) * 2018-02-05 2023-05-04 삼성디스플레이 주식회사 Resist stripper composition and stripping method of resist using the same
CN108321163B (en) * 2018-02-07 2020-10-16 业成科技(成都)有限公司 Image capturing device and manufacturing method thereof

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5880638A (en) * 1981-11-10 1983-05-14 Kanto Kagaku Kk Stripping solution for positive photoresist
JPS6350838A (en) * 1986-08-21 1988-03-03 Japan Synthetic Rubber Co Ltd Removing solution
JPS63208043A (en) * 1987-02-25 1988-08-29 Kanto Kagaku Kk Water soluble stripping liquid for positive type photoresist
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5545353A (en) * 1995-05-08 1996-08-13 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
JP2911792B2 (en) * 1995-09-29 1999-06-23 東京応化工業株式会社 Stripper composition for resist
TW426816B (en) * 1996-04-17 2001-03-21 Ekc Technology Inc Hydroxylamine-gallic compound composition and process
JP3993272B2 (en) * 1997-05-02 2007-10-17 大日本印刷株式会社 Thick film pattern forming method
JP2000008184A (en) * 1998-06-24 2000-01-11 Toppan Printing Co Ltd Etching of multilayer electrically conductive film
JP2000100558A (en) * 1998-09-18 2000-04-07 Matsushita Electric Ind Co Ltd Luminescent device
JP3161705B2 (en) * 1999-01-20 2001-04-25 東京応化工業株式会社 Stripper for positive resist
JP2001356496A (en) * 2000-06-15 2001-12-26 Nagase Kasei Kogyo Kk Photoresist remover composition and method for using the same
JP2002196510A (en) * 2000-12-26 2002-07-12 Nippon Zeon Co Ltd Resist removing solution
JP2002202617A (en) * 2000-12-27 2002-07-19 Tosoh Corp Resist removing composition
JP4474776B2 (en) * 2001-01-22 2010-06-09 東ソー株式会社 Resist stripper
JP4470328B2 (en) * 2001-02-09 2010-06-02 東ソー株式会社 Resist stripper
JP4483114B2 (en) * 2001-03-30 2010-06-16 東ソー株式会社 Resist stripper
JP2002357908A (en) * 2001-05-31 2002-12-13 Tokyo Ohka Kogyo Co Ltd Photoresist removing solution
JP4867092B2 (en) * 2001-07-04 2012-02-01 三菱瓦斯化学株式会社 Resist stripper composition
JP4620298B2 (en) * 2001-07-23 2011-01-26 パイオニア株式会社 Silver or silver alloy wiring, method for forming the same, and display panel substrate
JP2003140364A (en) * 2001-11-02 2003-05-14 Mitsubishi Gas Chem Co Inc Resist removing solution for copper wiring board
JP2003156859A (en) * 2001-11-22 2003-05-30 Mitsubishi Gas Chem Co Inc Photoresist remover composition and removing method

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