KR20080076535A - Stipper composition for photoresist comprising n-methylacetamide - Google Patents

Abstract

A stripper composition for a photoresist, and a method for stripping a photoresist by using the composition are provided to reduce the volatilization amount of a stripping composition and to decrease the stripping time. A stripper composition for a photoresist comprises 3-30 wt% of a water-soluble organic amine compound; 65-95 wt% of N-methylacetamide; and 0.01-5 wt% of a corrosion inhibitor. Preferably the N-methylacetamide is mixed with at least one compound selected from the group consisting of N-methylpyrrolidone(NMP), dimethylformaldehyde(NMF) and dimethylacetamide(DMAc). Preferably the corrosion inhibitor comprises at least one selected from the compounds represented by the formula 1, 2 or 3, wherein R1 and R2 are independently H or OH; R3 is H, a t-butyl group, a carboxyl group, a methyl ester group, an ethyl ester group or a propyl ester group; R4 is H or a C1-C4 alkyl group; R5 and R6 are independently a C1-C4 hydroxyalkyl group; and R7 and R8 are H or a C1-C4 alkyl group.

Description

Release liquid composition for photoresists containing N-methylacetamide {STIPPER COMPOSITION FOR PHOTORESIST COMPRISING N-METHYLACETAMIDE}

The present invention relates to a release liquid composition for photoresist, and more particularly, to a release liquid composition for photoresist comprising a water-soluble organic amine compound, N-methylacetamide (NMAc) and a corrosion inhibitor.

In the microcircuit manufacturing process of a semiconductor device or a liquid crystal display device, a photoresist is uniformly applied to a metal film of aluminum, an aluminum alloy, copper, a copper alloy, or the like formed on a substrate, or an insulating film of a silicon oxide film, a silicon nitride film, and the like. The photoresist pattern is formed by exposure and development, and then the conductive metal film or the insulating film is wet or dry etched using the patterned photoresist film as a mask to transfer the microcircuit pattern to the photoresist underlayer, thereby eliminating unnecessary photoresist. It proceeds to the process of removing a layer with a peeling liquid.

Basic characteristics of the stripper for removing the photoresist during the manufacturing process of the semiconductor device and the liquid crystal display device are as follows.

First, it must be able to delaminate the photoresist in a short time at low temperature and have a good delamination ability that should not leave photoresist residue on the substrate after rinse. In addition, it should have low corrosion resistance that should not damage the metal film or insulating film of the photoresist underlayer. In addition, when the room temperature reaction occurs between the solvents constituting the peeling liquid composition, the storage stability of the peeling liquid may be a problem and different physical properties may be shown depending on the mixing sequence during the preparation of the peeling liquid, and thus, there should be non-reactivity between the solvent and the high temperature stability. In addition, it should be low toxicity in order to be less toxic in consideration of the safety of the worker or environmental problems during disposal. In addition, when the photoresist peeling proceeds at a high temperature process, if a large amount of volatilization occurs, the component ratio changes rapidly and the process stability and work reproducibility of the peeling solution are lowered. In addition, the number of substrates that can be treated with a certain amount of stripping solution should be large, and the supply of components constituting the stripping solution should be easy and inexpensive, and economical so as to be able to recycle by recycling the used stripping solution.

However, currently, a photoresist stripper composed mainly of N-Methylformamide (NMF) and dimethylacetamide (DMAc) is significantly improved compared to conventional strippers such as stripping speed and stripping ability. It has many advantages, but since it uses DMAc (bp 165 ℃), which has a low boiling point, it has a large amount of volatilization in the actual LCD (Liquid Crystal Display) manufacturing line. Since the lowering is performed, the peeling treatment time is increased.

Accordingly, the present inventors, while maintaining the conventional peeling treatment ability, while applying a peeling treatment composition for the photoresist that can be applied at a peeling treatment temperature of 70 ℃ can reduce the peeling treatment time, including N-methylacetamide It confirmed that the peeling liquid composition exhibits the said effect, and completed this invention.

The present invention,

3 to 30% by weight of a water-soluble organic amine compound,

65 to 95 weight percent of N-methylacetamide, and

0.01 to 5 wt% corrosion inhibitor

It provides a release liquid composition for a photoresist comprising a.

In addition, the present invention

a) forming a metal film or an insulating film on the substrate,

b) coating a photoresist composition on the metal film or the insulating film and then prebaking to form a photoresist film,

c) post-baking the formed photoresist film after selectively forming the photoresist pattern through exposure and development;

d) etching the substrate using the formed photoresist pattern as a mask, and

e) removing the photoresist pattern using the stripper composition for photoresist of the present invention

It provides a peeling method of a photoresist film comprising a.

Hereinafter, the present invention will be described in more detail.

The present invention provides a photoresist stripper composition comprising 3 to 30 wt% of a water-soluble organic amine compound, 65 to 95 wt% of N-methylacetamide, and 0.01 to 5 wt% of a corrosion inhibitor.

In the peeling liquid composition for photoresists according to the present invention, the water-soluble organic amine compound preferably comprises at least one member selected from the group consisting of primary amino alcohol compounds, secondary amino alcohol compounds and tertiary amino alcohol compounds. Specific examples of the amino alcohol compounds include monoethanol amine (MEA), 1-aminoisopropanol (AIP), 2-amino-1-propanol, N-methylaminoethanol (N-MAE), 3-amino-1- Propanol, 4-amino-1-butanol, 2- (2-aminoethoxy) -1-ethanol (AEE), 2- (2-aminoethylamino) -1-ethanol, diethanol amine (DEA), triethanol amine It is preferable to include one or more selected from the group consisting of (TEA) and 1- (2-hydroxyethyl) piperazine (HEP), more preferably 2- (2-aminoethoxy) -1-ethanol (AEE) is excellent in terms of peeling performance, corrosion resistance and economical efficiency. However, it is not necessarily limited thereto.

The content of the water-soluble organic amine compound is preferably 3 to 30% by weight, more preferably 5 to 20% by weight of the total weight of the composition. When the content of the water-soluble organic amine compound is less than 3% by weight, the peeling force on the modified photoresist is insufficient, and when the content of the water-soluble organic amine compound is higher than 30% by weight, the viscosity value increases, so that the peeling time is low due to the low penetration of the photoresist in the lift-off method. There is a problem that this increases, and also the corrosion resistance of the photoresist underlayer against the conductive metal film becomes large.

In the stripper composition for photoresist according to the present invention, the N-methylacetamide serves as a solvent for dissolving the photoresist. In addition, the N-methylacetamide has a higher boiling point than conventional organic solvents, thereby reducing the volatilization at 70 ° C., which is a temperature at which the stripping process is carried out, and lowering the surface tension of the stripping solution to reduce wettability of the photoresist film. Improve the wetting property.

The content of N-methylacetamide is preferably 65 to 95% by weight of the total weight of the composition. When the content is less than 65% by weight, the surface tension of the stripping solution may be increased to reduce wettability, and when the content is more than 95% by weight, the stripping property of the stripping solution may be reduced.

The N-methylacetamide may be used in combination with a compound such as N-methylpyrrolidinone (NMP), dimethylformamide (NMF), dimethylacetamide (DMAc), or the like. At this time, the composition of the mixture is N-methylacetamide (NMAc) and N-methylpyrrolidinone (NMP) 6: 4 to 4: 6, N-methylacetamide (NMAc) and dimethylformamide (NMF) 6: 4 to 4: 6, or N-methylacetamide (NMAc), dimethylformamide (NMF) and dimethylacetamide (DMAc) are preferably used in a mixture of 6: 2: 2 to 4: 3: 3. However, it is not limited by this.

In the stripper composition for photoresists according to the present invention, it is preferable to use a compound for preventing the corrosion of the metal film of the photoresist underlayer. The corrosion inhibitor prevents corrosion of metal films such as aluminum or aluminum alloys or copper or copper alloy films even when directly washed with water without using isopropanol as an intermediate cleaning solution.

In general, when the photoresist is stripped with a stripping solution and the stripped substrate is immediately washed with water without using isopropanol, which is an intermediate cleaning solution, the amine component in the stripping solution composition is mixed with water to form a highly corrosive alkali hydroxide ion. This causes corrosion of the metal. However, in the present invention, by using a corrosion inhibitor, it is possible to form a complex compound with aluminum and copper in an alkali state, adsorb on the surface of aluminum and copper, and form a protective film to prevent corrosion by hydroxide ions.

The corrosion inhibitor included in the photoresist stripper composition of the present invention preferably includes one or more selected from the group consisting of compounds represented by the following formulas (1), (2) and (3).

[Formula 1]

In Chemical Formula 1,

R1 and R2 are the same as or different from each other, and each independently hydrogen or a hydroxyl group,

R 3 is hydrogen, t-butyl group, carboxyl group (-COOH), methyl ester group (-COOCH ₃ ), ethyl ester group (-COOC ₂ H ₅ ) or propyl ester group (-COOC ₃ H ₇ ).

[Formula 2]

In Chemical Formula 2,

R4 is hydrogen or an alkyl group having 1 to 4 carbon atoms,

R5 and R6 are the same as or different from each other, and each independently a hydroxyalkyl group having 1 to 4 carbon atoms.

[Formula 3]

In Chemical Formula 3,

R7 and R8 are hydrogen or an alkyl group having 1 to 4 carbon atoms.

Corrosion inhibitors represented by Chemical Formulas 1, 2, and 3 are significantly improved in anti-corrosion performance compared to benzotriazole, tolyltriazole, and the like, which have been widely used as corrosion inhibitors of aluminum and copper films. Not only does it cause corrosion of the copper or copper alloy film of the photoresist underlayer, but also works very effectively to remove residues of the cured photoresist.

Corrosion preventing mechanisms of the corrosion inhibitors represented by Formula 1, Formula 2, and Formula 3 are as follows. In the case of the corrosion inhibitor represented by the formula (1), the hydroxy group directly substituted in the benzene ring is adsorbed with aluminum to control the corrosion of the metal by the basic solution. In the case of the corrosion inhibitor represented by the formula (2) and formula (3), a non-covalent electron pair of abundant nitrogen atoms present in the triazole ring forms an electronic bond with copper to control the corrosion of the metal.

The content of such a corrosion inhibitor preferably includes 0.01 to 5% by weight of the total weight of the composition, more preferably 0.1 to 1% by weight. If the amount of the corrosion inhibitor is less than 0.01% by weight, partial corrosion may occur in the metal wiring when the substrate to be peeled is in contact with the stripping solution for a long time, and when the amount of the corrosion inhibitor exceeds 5% by weight, the viscosity increases to decrease the peeling force. It is possible to increase the price of the composition, which is inefficient in terms of price / performance.

The peeling liquid composition for photoresists according to the present invention may further include a water-soluble nonionic surfactant. The water-soluble nonionic surfactant may be used to lower the surface tension of the stripping solution when the water content is increased, and may also be used to prevent the deterioration of the deteriorated photoresist after peeling from the substrate.

The water-soluble nonionic surfactant is preferably used a compound represented by the following formula (4), but is not limited thereto.

[Formula 4]

In Chemical Formula 4,

R9 is hydrogen or an alkyl group having 1 to 10 carbon atoms,

T is hydrogen, methyl or ethyl,

m is an integer from 1 to 4,

n is an integer from 1 to 50.

The water-soluble nonionic surfactant represented by the formula (4) does not cause a chemical change even in a highly basic stripper composition, has excellent compatibility with water and an organic solvent, and can improve the peelability of the stripper.

The content of the water-soluble nonionic surfactant preferably includes 0.01 to 1% by weight of the total weight of the composition. If the content of the water-soluble nonionic surfactant exceeds 1% by weight, there is no particular improvement and the viscosity is increased, and the composition price is high and there is no economy. In general, the lower the viscosity, the better the low temperature peel force.

In addition, the present invention

a) forming a metal film or an insulating film on the substrate,

b) coating a photoresist composition on the metal film or the insulating film and then prebaking to form a photoresist film,

c) post-baking the formed photoresist film after selectively forming the photoresist pattern through exposure and development;

d) etching the substrate using the formed photoresist pattern as a mask, and

e) removing the photoresist pattern by using the stripper composition for photoresist of the present invention;

It provides a peeling method of a photoresist film comprising a.

Step a) is a step of forming a metal film or an insulating film on the substrate.

Although it does not specifically limit as a material as a said board | substrate, A glass substrate, a plastic substrate, another flexible substrate, etc. can be used, A transparent glass substrate with strong heat resistance is preferable.

The metal film or the insulating film may be a metal film or silicon oxide film, silicon, such as at least one single film or a multilayer film selected from the group consisting of aluminum, aluminum alloy, copper, copper alloy, etc. used in the circuit formation of a semiconductor device or a liquid crystal display device. Insulating films such as nitride films and the like. Here, the at least one single film or multilayer film selected from the group consisting of aluminum, aluminum alloy, copper or copper alloy, etc. may vary in form and include a single film such as aluminum and copper, and aluminum / molybdenum and copper / molybdenum Or a double film such as molybdenum / aluminum / molybdenum or molybdenum / copper / molybdenum.

Step b) is a step of forming a photoresist film by coating the photoresist composition on a metal film or an insulating film and then prebaking.

Examples of the photoresist composition include a positive photoresist, a negative photoresist, or a dual tone photoresist, and a dual tone photoresist. It is preferable to use a photoresist film composed of a photoactive compound based on a borac phenol resin and diazonaphthoquinone.

The photoresist composition may be coated on a substrate using a roll coating, spin coating, slit / spin coating or slit coating method. The photoresist film may be formed by removing the organic solvent through a prebaking process after coating. It is preferable to perform the said prebaking for 1 to 5 minutes at 80-115 degreeC.

Step c) is a step of forming a photoresist pattern through a post-baking process after the selective exposure and development of the prepared photoresist film. The exposure is performed by using a photolithography apparatus such as a mask aligner, stepper or scanner, a photoresist of a single or mixed light source of g-line (436 nm), h-line (405 nm) or i-line (365 nm) through a pattern mask. It is exposed on a film. The exposure energy is determined according to the sensitivity of the photoresist, and usually 20 to 200 mJ / cm ² may be used.

After the exposure is completed, the substrate is dip or sprayed with a developer to remove the photoresist of the exposed portion to form a desired photoresist pattern. The developer is an inorganic alkali compound such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, or fortesilicate or an organic alkali such as triethylamine, triethanolamine, tetramethylammonium hydroxide or tetraethylammonium hydroxide Although an aqueous solution can be used, tetramethylammonium hydroxide is widely used in electronic device manufacturing due to metal contamination and metal corrosion. Tetramethylammonium hydroxide is preferably used in the form of an aqueous solution of 2 to 3% by weight based on the total weight of the developer, sprayed at 20 to 30 ° C. for 30 to 90 seconds, washed with ultrapure water for 60 to 120 seconds, and dried It is preferable.

Through post-baking of the photoresist pattern before etching after completion of development, adhesion to the lower substrate may be enhanced and resistance to etching may be enhanced. It is preferable to perform the conditions of the said post baking for 2 to 5 minutes at 130-150 degreeC.

In step d), the substrate is etched and patterned using the photoresist pattern as a mask. After forming the photoresist pattern as described above, the lower substrate is etched using the photoresist pattern as a mask to transfer the pattern, and wet etching using a liquid etching solution or dry etching using a plasma in a gas phase may be performed according to the lower substrate film quality. Can be. Specifically, the metal film of aluminum, aluminum alloy, copper, copper alloy, etc. is subjected to wet etching using a liquid etching solution such as a mixed acid solution of phosphoric acid / nitric acid / acetic acid, an aqueous solution of hydrogen peroxide or an aqueous solution of oxalic acid, and a silicon oxide film, a silicon nitride film, or the like. The insulating film may be subjected to dry etching using plasma.

The step e) is a step of peeling and removing the photoresist pattern using the stripper composition for photoresist of the present invention. The method of peeling the photoresist pattern is a dip method of dipping several sheets of the substrate to be peeled simultaneously using the photoresist stripper composition of the present invention and spraying (spraying) the stripper on the substrate one by one. Both single-sheet methods of removing photoresist can be used. In the dip method, the substrate to be peeled is preferably immersed at 50 to 80 for 2 to 10 minutes, and the single-leaf type is sprayed at 50 to 80 ° C. for 2 to 5 minutes at 50 to 80 ° C., and then sprayed with the ultrapure water at 60 to 60 minutes. It is preferable to wash after 120 seconds and to dry.

Hereinafter, preferred examples are provided to aid in understanding the present invention. However, the following examples are merely provided to more easily understand the present invention, and the scope of the present invention is not limited thereto.

Example 1

10% by weight of 2- (2-aminoethoxy) -1-ethanol, 89.5% by weight of N-methylacetamide, and 0.5% by weight of methyl gallate were added to the mixing tank equipped with the stirrer, and then, at room temperature for 1 hour. Stirring at a speed of 500rpm to prepare a peeling liquid composition for a photoresist.

Examples 2-6 and Comparative Examples 1-8

To the composition and content shown in Table 1 below to prepare a release liquid composition for a photoresist in the same manner as in Example 1.

TABLE 1

Furtherance Example 1 AEE / NMAc / MG / TH = 10 / 89.1 / 0.5 / 0.3 Example 2 NMAE / NMAc / TH = 10 / 89.4 / 0.5 / 0.1 Example 3 AEE / NMF / NMAc / MG / TH = 5/15 / 79.0 / 0.5 / 0.5 Example 4 AEE / NMF / NMAc / MG / TH = 10/30 / 58.5 / 1.0 / 0.5 Example 5 AEE / NMF / NMAc / DMAc / MG / TH = 5/15/50 / 28.2 / 0.5 / 0.3 Example 6 AEE / NMF / NMAc / DMAc / MG / TH = 10/30/50 / 8.8 / 1.0 / 0.2 Comparative Example 1 AEE / DMAc / MG / TH = 10 / 89.8 / 0.1 / 0.1 Comparative Example 2 AEE / NMF / MG / TH = 10 / 89.4 / 0.5 / 0.1 Comparative Example 3 AEE / NMP / MG / TH = 10 / 88.9 / 1.0 / 0.1 Comparative Example 4 NMAE / DMAc / MG / TH = 10 / 89.5 / 0.5 Comparative Example 5 NMAE / NMF / MG = 10 / 89.5 / 0.5 Comparative Example 6 NMAE / NMP / TH = 10 / 89.5 / 0.5 Comparative Example 7 MEA / DMAc / MG / TH = 10 / 89.0 / 0.5 / 0.5 Comparative Example 8 AEE / NMP / NMF / DMAc / MG / TH = 7/13/30 / 49.5 / 0.5 / 0.5

AEE: 2- (2-aminoethoxy) -1-ethanol

NMAE: N-methylaminoethanol

NMAc: N-methylacetamide

NMP: N-methylpyrrolidinone

NMF: Dimethylformamide

DMAc: N-methylacetamide

MG: Methyl Gallate

TH: tetrahydrotolutriazole

Experimental Example

In the TFT circuit fabrication of LCD, a dissimilar metal alloy made of Mo / Ti on the glass substrate subjected to the gate process was formed at 300 Å and the Cu layer was formed at 2,000 상부 on the upper side, and then a positive photoresist was applied and dried to form a pattern by photolithography Was prepared, and the specimen of the state completed by the wet angle was prepared.

By using the peeling liquid composition for photoresist prepared in Examples 1 to 6 and Comparative Examples 1 to 8, the peeling rate volatility and the degree of corrosion of copper wirings were measured in the same manner as shown in Table 2 below.

Peeling Speed

After spin coating a 2 µm positive-resist for liquid crystal display (LCD) on bare glass, pre-baking at 90 ° C. for 100 seconds using a hot plate. After performing the post-baking for 210 seconds at 140 ° C and peeling evaluation was performed using the peeling solution composition for photoresist prepared in Examples 1 to 6 and Comparative Examples 1 to 8. Peeling conditions were measured by the dip (Dip) method for each composition at 60 ℃ to measure the time to remove all the positive-photoresist.

◎: Within 3 minutes of peeling time

○: Peeling time 3-5 minutes

△: peeling time 5-7 minutes

X: Peeling time 7 minutes or more

volatility

100 g of each of the photoresist stripper compositions prepared in Examples 1 to 6 and Comparative Examples 1 to 8 were placed in 150 ml vials, and then, the vials were adjusted to 70 ° C. using an oil bath. The weight change was measured while standing for a day and compared.

◎: More than 71% of original weight

○: 61 ~ 70% or more

△: 51 to 60%

×: 50% or less remaining

Corrosion degree

The photoresist stripper composition prepared in Examples 1 to 6 and Comparative Examples 1 to 8 was maintained at 70 ° C., and the prepared specimen was deposited for 30 minutes, and then washed with water for 30 seconds and 30 seconds in ultrapure water. And dried with nitrogen. After completion of drying, the degree of corrosion of the surface, side, and cross-section of the specimen was observed with an electron microscope (FE-SEM) at 50,000 to 200,000 magnification, and the results are shown in Table 2 below. At this time, the corrosion degree was evaluated based on the following criteria, the evaluation result was able to obtain a clean pattern without any corrosion on the surface, side, and cross section of the specimen to which the stripper composition of Examples 1 to 6 were applied.

Corrosion Degree Evaluation Criteria

◎: No corrosion on the surface and side of Cu layer

○: slight corrosion on the surface and side of the Cu layer

△: partial corrosion on the surface and side of Cu layer

×: severe corrosion on the surface and side of Cu layer as a whole

TABLE 2

Peeling Speed volatility Metal Corrosion (Cu) Example 1 ○ ◎ ◎ Example 2 ○ ○ ◎ Example 3 ◎ ◎ ◎ Example 4 ◎ ◎ ◎ Example 5 ◎ ○ ◎ Example 6 ◎ ◎ ◎ Comparative Example 1 △ × △ Comparative Example 2 ◎ ◎ △ Comparative Example 3 ◎ ◎ △ Comparative Example 4 × × ◎ Comparative Example 5 △ ○ ◎ Comparative Example 6 △ ○ ◎ Comparative Example 7 ◎ × × Comparative Example 8 ○ × ◎

The photoresist stripper composition according to the present invention is capable of reducing the volatilization amount of the stripper composition and applying a stripping process temperature of 70 ° C. while maintaining a conventional stripping treatment capability in the stripping process, thereby producing a semiconductor device and a liquid crystal display device. There is an advantage that can reduce the peeling treatment time.

Claims (18)

3 to 30% by weight of a water-soluble organic amine compound, 65 to 95 weight percent of N-methylacetamide, and 0.01 to 5 wt% corrosion inhibitor Peeling liquid composition for photoresists comprising a. The peeling liquid composition for photoresist according to claim 1, wherein the water-soluble organic amine compound comprises at least one selected from the group consisting of a primary amino alcohol compound, a secondary amino alcohol compound, and a tertiary amino alcohol compound. The method of claim 2, wherein the amino alcohol compounds are monoethanol amine (MEA), 1-aminoisopropanol (AIP), 2-amino-1-propanol, N-methylaminoethanol (N-MAE), 3-amino-1- Propanol, 4-amino-1-butanol, 2- (2-aminoethoxy) -1-ethanol (AEE), 2- (2-aminoethylamino) -1-ethanol, diethanol amine (DEA), and triethanol A peeling liquid composition for photoresist, characterized in that it comprises one or more selected from the group consisting of amines (TEA). The N-methylacetamide (NMAc) is at least one compound selected from the group consisting of N-methylpyrrolidinone (NMP), dimethylformamide (NMF) or dimethylacetamide (DMAc) It is used by mixing, The peeling liquid composition for photoresists characterized by the above-mentioned. The stripper composition for photoresist according to claim 4, wherein the N-methylacetamide (NMAc) is mixed with N-methylpyrrolidinone (NMP) at 6: 4 to 4: 6. The release liquid composition for photoresist according to claim 4, wherein the N-methylacetamide (NMAc) is mixed with dimethylformamide (NMF) in a range of 6: 4 to 4: 6. The method of claim 4, wherein the N-methylacetamide (NMAc) is 6: 2: 2 to 4: 3: 3 with N-methylpyrrolidinone (NMP), dimethylformamide (NMF) and dimethylacetamide (DMAc). A peeling liquid composition for photoresists, which is used by mixing. The method according to claim 1, wherein the corrosion inhibitor is a peeling liquid composition for a photoresist, characterized in that it comprises one or more selected from the group consisting of compounds represented by the following formula (1), (2) and (3): [Formula 1]

In Chemical Formula 1, R1 and R2 are the same as or different from each other, and each independently hydrogen or a hydroxyl group, R3 is hydrogen, t-butyl group, carboxyl group (-COOH), methyl ester group (-COOCH ₃ ), ethyl ester group (-COOC ₂ H ₅ ) or propyl ester group (-COOC ₃ H ₇ ). [Formula 2]

In Chemical Formula 2, R4 is hydrogen or an alkyl group having 1 to 4 carbon atoms, R5 and R6 are the same as or different from each other, and each independently a hydroxyalkyl group having 1 to 4 carbon atoms. [Formula 3]

In Chemical Formula 3, R7 and R8 are hydrogen or an alkyl group having 1 to 4 carbon atoms. The release liquid composition for photoresist according to claim 1, wherein the release liquid composition for photoresist further comprises 0.01 to 1% by weight of a water-soluble nonionic surfactant. The method of claim 1, wherein the d) water-soluble nonionic surfactant is a peeling liquid composition for a photoresist, characterized in that represented by the formula (4): [Formula 4]

In Chemical Formula 4, R9 is hydrogen or an alkyl group having 1 to 10 carbon atoms, T is hydrogen, methyl or ethyl, m is an integer from 1 to 4, n is an integer from 1 to 50. a) forming a metal film or insulating film on the substrate, b) coating a photoresist composition on the metal film or the insulating film and then prebaking to form a photoresist film, c) post-baking the formed photoresist film after selectively forming the photoresist pattern through exposure and development; d) etching the substrate using the formed photoresist pattern as a mask, and e) removing the photoresist pattern using the stripper composition for photoresist of any one of claims 1 to 10; Peeling method of the photoresist film comprising a. The method of claim 11, wherein the metal film is a single film using molybdenum, molybdenum alloy, copper, copper alloy or a double film or molybdenum (molybdenum (alloy) / aluminum (alloy), copper (alloy) / molybdenum (alloy)) It is a triple film using alloy) / aluminum (alloy) / molybdenum (alloy), The peeling method of the photoresist film characterized by the above-mentioned. The method of claim 11, wherein the prebaking is performed at 80 to 115 ° C. for 1 to 5 minutes. The method of claim 11, wherein the exposure condition is 20 to 200 mJ / cm ² . The method of claim 11, wherein the post-baking is performed at 120 to 150 ° C. for 2 to 5 minutes. The method of claim 11, wherein the peeling method is a dip type or a single leaf type. 17. The method of claim 16, wherein the dip method is performed at 50 to 80 minutes for 2 to 10 minutes. The method of claim 16, wherein the single-leaf method is performed for 2 to 5 minutes at 50 to 80 ℃.