CN112711176A - Photoresist stripping liquid applicable to semiconductor field and preparation method - Google Patents
Photoresist stripping liquid applicable to semiconductor field and preparation method Download PDFInfo
- Publication number
- CN112711176A CN112711176A CN202011496711.4A CN202011496711A CN112711176A CN 112711176 A CN112711176 A CN 112711176A CN 202011496711 A CN202011496711 A CN 202011496711A CN 112711176 A CN112711176 A CN 112711176A
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- Prior art keywords
- applicable
- semiconductor field
- quaternary ammonium
- photoresist
- alcohol amine
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000007788 liquid Substances 0.000 title claims description 8
- -1 alcohol amine Chemical class 0.000 claims abstract description 20
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims abstract description 15
- 239000008367 deionised water Substances 0.000 claims abstract description 13
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000003495 polar organic solvent Substances 0.000 claims abstract description 12
- 239000012459 cleaning agent Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 11
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 8
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 6
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 claims description 6
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 4
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 4
- UEEJHVSXFDXPFK-UHFFFAOYSA-O N-dimethylethanolamine Chemical compound C[NH+](C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-O 0.000 claims description 4
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 4
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 4
- 229960001231 choline Drugs 0.000 claims description 4
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 4
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims description 4
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 4
- 239000002798 polar solvent Substances 0.000 claims description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 4
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 claims description 4
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 2
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 2
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 2
- 229940043276 diisopropanolamine Drugs 0.000 claims description 2
- WJLUBOLDZCQZEV-UHFFFAOYSA-M hexadecyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCCCCCCCCCCCCCCC[N+](C)(C)C WJLUBOLDZCQZEV-UHFFFAOYSA-M 0.000 claims description 2
- 239000004312 hexamethylene tetramine Substances 0.000 claims description 2
- 235000010299 hexamethylene tetramine Nutrition 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 claims description 2
- 150000007530 organic bases Chemical class 0.000 claims description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 claims description 2
- 229960001760 dimethyl sulfoxide Drugs 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-M acetoacetate Chemical compound CC(=O)CC([O-])=O WDJHALXBUFZDSR-UHFFFAOYSA-M 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 150000002443 hydroxylamines Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a photoresist stripping solution applicable to the field of semiconductors and a preparation method thereof, wherein the photoresist stripping solution comprises a quaternary ammonium compound, organic alcohol amine, a polar organic solvent and deionized water; the cleaning agent comprises, by weight, 0.5-20% of quaternary ammonium compound, 1-40% of organic alcohol amine, 20-95% of polar organic solvent and 1-50% of deionized water. The invention has good stability and good photoresist removing effect, and can not corrode the gallium arsenide and other substrates.
Description
Technical Field
The invention relates to a photoresist stripping liquid applicable to the field of semiconductors and a preparation method thereof.
Background
Photolithography is one of the most important steps in the manufacture of semiconductors and displays. The method has the main function of copying the patterns on the mask plate to a silicon wafer or other substrates to prepare for the next etching or ion implantation process. In the photoetching process, a layer of photoresist is required to be coated on a substrate, after ultraviolet exposure, the chemical property of the photoresist is changed, and after development, the exposed positive photoresist (the negative photoresist is an unexposed area and is developed and removed) is removed, so that the circuit pattern is transferred to the photoresist from a mask. And then the circuit pattern is transferred to the substrate from the photoresist through an etching process. After the above-mentioned pattern transfer is completed, the photoresist and its residues need to be cleaned for the next operation.
In the prior art, CN104635438 discloses a photoresist stripping solution containing quaternary amine oxide, epoxy organic solvent and other types of solvents, which is non-corrosive to aluminum copper substrate but corrosive to gallium arsenide substrate. CN 101842872a discloses a photoresist stripping solution, which contains hydroxylamine or hydroxylamine derivatives, quaternary ammonium compound and polar organic solvent. The product has poor stability due to the inclusion of hydroxylamine, which is prone to explosion. CN1207643C discloses a photoresist stripping solution, which contains acetoacetate or ester derivative of acetic acid, tetramethylammonium hydroxide, diol or polar organic solvent, and the stripping solution has poor stripping effect, long stripping time and high temperature for some thick-film photoresists.
Disclosure of Invention
The invention aims to solve the technical problem of providing the photoresist stripping liquid applicable to the field of semiconductors, which has good stability and good photoresist stripping effect, and can not corrode a gallium arsenide substrate
The photoresist stripping solution applicable to the field of semiconductors is realized by the following technical scheme: comprises quaternary ammonium compound, organic alcohol amine, polar organic solvent and deionized water;
the cleaning agent comprises, by weight, 0.5-20% of quaternary ammonium compound, 1-40% of organic alcohol amine, 20-95% of polar organic solvent and 1-50% of deionized water.
As a preferred technical scheme, the quaternary ammonium compound is 1-8 wt%, the organic alcohol amine is 2-30 wt%, the polar organic solvent is 30-90 wt%, and the deionized water is 1-30 wt%.
As a preferred embodiment, the quaternary ammonium compound is selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, choline, hexadecyltrimethylammonium hydroxide and benzyltrimethylammonium hydroxide.
As a preferred embodiment, the quaternary ammonium compound is preferably tetramethylammonium hydroxide or choline.
Preferably, the organic alcohol amine is at least one selected from the group consisting of monoethanolamine, N-dimethylethanolamine, N-diethylethanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, diethanolamine, triethanolamine, 3-propanolamine, 2-aminoethanolamine, ethyldiethanolamine, N-ethanolamine, and diglycolamine.
As the preferable technical scheme, the organic alcohol amine is preferably one or more of monoethanolamine, diglycolamine, N-methylethanolamine and N' N-dimethylethanolamine.
Preferably, the polar solvent is one or more selected from formamide, N-methylformamide, N-methylacetamide, N-dimethylformamide, N-dimethylacetamide, dimethyl sulfoxide, sulfolane, acetonitrile, benzonitrile, N-methyl-pyrrolidone, N-ethyl-pyrrolidone, 1-cyclohexyl-2-pyrrolidone, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, hexamethylenetetramine, and propylene carbonate.
As a preferable technical scheme, the polar solvent is preferably one or more of dimethyl sulfoxide, diethylene glycol monobutyl ether or dipropylene glycol monomethyl ether.
As a preferred technical scheme, the deionized water is selected from ultrapure water larger than 18M omega.
A preparation method of photoresist stripping liquid applicable to the field of semiconductors comprises the following preparation processes: the quaternary ammonium compound, the organic alcohol amine, the polar organic solvent and the deionized water are sequentially added, stirred and dissolved, the heat release phenomenon of the organic base is controlled in the dissolving process, the temperature in the whole dissolving process is controlled below 50 ℃, and the solution is filtered by a filter element below 1um after being completely dissolved.
The invention has the beneficial effects that: the invention has good stability and good photoresist removing effect, and can not corrode the gallium arsenide and other substrates.
Detailed Description
Table 1 components and contents of photoresist stripper for examples:
TABLE 1
Effects of the embodiment
In order to further examine the effect of the photoresist stripping solution on removing the photoresist, the invention adopts the following technical means: firstly, cleaning a substrate by using a special cleaning agent, washing by using ultrapure water, and drying; spin-coating a photoresist film with the thickness of 2um on the substrate at 800-1000 rpm by a spin coating machine, and curing at 150 ℃ by an oven to obtain a test piece for testing the stripping performance of the photoresist stripping liquid composition on the photoresist; the cleaning process comprises the following steps: cutting the substrate coated with the photoresist into 10 x 10cm small blocks, cleaning by using the soaking or spraying process according to the embodiment, and cleaning by using deionized water and drying by using nitrogen respectively; the stripping effect and the substrate corrosion performance of the photoresist stripping solution are shown in table 2:
TABLE 2
As can be seen from the examples in the above table, the photoresist stripper of the present invention can effectively resist on the copper substrate surface without corroding the copper substrate; the method has the characteristics of large implementation range, large operation window and the like; most importantly, the substrate such as gallium arsenide and the like is not corroded.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that are not thought of through the inventive work should be included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope defined by the claims.
Claims (10)
1. A photoresist stripping liquid applicable to the field of semiconductors is characterized in that: comprises quaternary ammonium compound, organic alcohol amine, polar organic solvent and deionized water.
The cleaning agent comprises, by weight, 0.5-20% of quaternary ammonium compound, 1-40% of organic alcohol amine, 20-95% of polar organic solvent and 1-50% of deionized water.
2. The photoresist stripper applicable to the semiconductor field according to claim 1, wherein: the organic alcohol amine quaternary ammonium salt comprises, by weight, 1-8% of quaternary ammonium compound, 2-30% of organic alcohol amine, 30-90% of polar organic solvent and 1-30% of deionized water.
3. The photoresist stripper applicable to the semiconductor field according to claim 1, wherein: the quaternary ammonium compound is selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, choline, hexadecyltrimethylammonium hydroxide, and benzyltrimethylammonium hydroxide.
4. The photoresist stripper applicable to the semiconductor field according to claim 1, wherein: the quaternary ammonium compound is selected from tetramethylammonium hydroxide or choline.
5. The photoresist stripper applicable to the semiconductor field according to claim 1, wherein: the organic alcohol amine is at least one selected from monoethanolamine, N-dimethylethanolamine, N-diethylethanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, diethanolamine, triethanolamine, 3-propanolamine, 2-aminoethanolamine, ethyldiethanolamine, N-ethanolamine, and diglycolamine.
6. The photoresist stripper applicable to the semiconductor field according to claim 1, wherein: the organic alcohol amine is one or more selected from monoethanolamine, diglycolamine, N-methylethanolamine and N' N-dimethylethanolamine.
7. The photoresist stripper applicable to the semiconductor field according to claim 1, wherein: the polar solvent is one or more selected from formamide, N-methylformamide, N-methylacetamide, N-dimethylformamide, N-dimethylacetamide, dimethyl sulfoxide, sulfolane, acetonitrile, benzonitrile, N-methyl-pyrrolidone, N-ethyl-pyrrolidone, 1-cyclohexyl-2-pyrrolidone, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, hexamethylenetetramine and propylene carbonate.
8. The photoresist stripper applicable to the semiconductor field according to claim 1, wherein: the polar solvent is one or more selected from dimethyl sulfoxide, diethylene glycol monobutyl ether or dipropylene glycol monomethyl ether.
9. The photoresist stripper applicable to the semiconductor field according to claim 1, wherein: the deionized water is selected from ultrapure water greater than 18M Ω.
10. A preparation method of photoresist stripping liquid applicable to the field of semiconductors is characterized by comprising the following steps: the preparation process comprises the following steps: the quaternary ammonium compound, the organic alcohol amine, the polar organic solvent and the deionized water are sequentially added, stirred and dissolved, the heat release phenomenon of the organic base is controlled in the dissolving process, the temperature in the whole dissolving process is controlled below 50 ℃, and the solution is filtered by a filter element below 1um after being completely dissolved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011496711.4A CN112711176A (en) | 2020-12-17 | 2020-12-17 | Photoresist stripping liquid applicable to semiconductor field and preparation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011496711.4A CN112711176A (en) | 2020-12-17 | 2020-12-17 | Photoresist stripping liquid applicable to semiconductor field and preparation method |
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| CN112711176A true CN112711176A (en) | 2021-04-27 |
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| CN202011496711.4A Pending CN112711176A (en) | 2020-12-17 | 2020-12-17 | Photoresist stripping liquid applicable to semiconductor field and preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115820351A (en) * | 2022-12-19 | 2023-03-21 | 芯越微电子材料(嘉兴)有限公司 | Semiconductor wafer substrate cleaning solution composition and application method thereof |
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|---|---|---|---|---|
| JP2003140364A (en) * | 2001-11-02 | 2003-05-14 | Mitsubishi Gas Chem Co Inc | Resist removing solution for copper wiring board |
| CN1578932A (en) * | 2001-11-02 | 2005-02-09 | 三菱瓦斯化学株式会社 | Method for releasing resist |
| CN104281017A (en) * | 2013-07-05 | 2015-01-14 | 三星电机株式会社 | Dry film resist remover composition and method for removing dry film resist using the same |
| CN107121901A (en) * | 2017-06-23 | 2017-09-01 | 昆山欣谷微电子材料有限公司 | A kind of rich water base cleaning liquid composition |
| CN111448520A (en) * | 2017-12-08 | 2020-07-24 | 汉高股份有限及两合公司 | Photoresist stripper composition |
-
2020
- 2020-12-17 CN CN202011496711.4A patent/CN112711176A/en active Pending
Patent Citations (5)
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|---|---|---|---|---|
| JP2003140364A (en) * | 2001-11-02 | 2003-05-14 | Mitsubishi Gas Chem Co Inc | Resist removing solution for copper wiring board |
| CN1578932A (en) * | 2001-11-02 | 2005-02-09 | 三菱瓦斯化学株式会社 | Method for releasing resist |
| CN104281017A (en) * | 2013-07-05 | 2015-01-14 | 三星电机株式会社 | Dry film resist remover composition and method for removing dry film resist using the same |
| CN107121901A (en) * | 2017-06-23 | 2017-09-01 | 昆山欣谷微电子材料有限公司 | A kind of rich water base cleaning liquid composition |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115820351A (en) * | 2022-12-19 | 2023-03-21 | 芯越微电子材料(嘉兴)有限公司 | Semiconductor wafer substrate cleaning solution composition and application method thereof |
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