KR20010073410A - Resist remover composition - Google Patents

Abstract

PURPOSE: A resist remover composition is provided to improve the time required for removing resist film deteriorated by metallic byproducts, and minimize corrosion of metallic wires, especially copper wires, and to enhance facility in rinsing by using water only. CONSTITUTION: A resist remover composition is comprised of 10 to 40 wt.% of water-soluble organic amine compound, 40 to 70 wt.% of water-soluble organic solvent, 10 to 30 wt.% of water, 5 to 15 wt.% of organic phenol compound (formula 1) having two or three hydroxyl group, 0.5 to 5 wt.% of anionic compound having a perfluoroalkyl functional group, and 0.01 to 1 wt.% of polyoxy ethylene alkylamine ether surfactant. The water-soluble organic amine compound is preferably amino alcohol compound, and the water-soluble organic solvent is selected from a group consisting of dimethylsulfoxide, N-methyl pyrrolidine, dimethyl acetamide, and dimethyl formamide.

Description

Resist remover composition

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist remover composition for removing resist during the manufacture of semiconductor devices such as integrated circuits (ICs), highly integrated circuits (LSI), and ultra-high integrated circuits (VLSI).

In general, a manufacturing process of a semiconductor device is performed by forming a resist pattern on a conductive layer formed on a semiconductor substrate, and then removing the conductive layer pattern by etching by removing the conductive layer in a region not covered by the pattern using the pattern as a mask. The forming process is used dozens of times. The resist pattern used as the mask should be removed on the conductive layer by a resist remover in the cleaning step after the conductive layer pattern forming step. However, in the recent ultra-high integrated circuit semiconductor manufacturing process, since the etching process for forming the conductive layer pattern mainly consists of the dry etching process, it is difficult to remove the resist in the subsequent cleaning process.

The dry etching process is an alternative to the wet etching process using acidic liquid chemicals, and the etching process is performed using a gas phase-solid reaction between a plasma etching gas and a material film such as a conductive layer. The dry etching process is easy to control and obtains a sharp pattern, thus becoming the mainstream of the etching process. However, in the dry etching method, the removal of the resist becomes difficult because ions and radicals in the plasma etching gas on the surface of the resist film cause a complex chemical reaction with the resist film during the process of etching the conductive layer. In particular, it is difficult to remove the alteration hardening resist that occurs in the dry etching of the conductive layer such as tungsten and titanium nitride even when various chemicals are used in the cleaning process.

Recently, a resist remover composition composed of hydroxylamine and aminoethoxyethanol has been widely used because of its relatively effective removal performance for most cured resist films. However, the remover composition has a serious corrosion on the copper wiring metal layer, which is newly applied instead of aluminum wiring in a semiconductor mass production line of 1G DRAM or more, and thus, it is desired to develop a new resist remover that can compensate for this.

On the other hand, a resist remover composition composed of alkanol amines and diethylene glycol monoalkyl ethers, which have been recently proposed, have also been widely used because of their low odor and toxicity and effective removal performance for most resist films. However, it has been found that the remover composition also does not satisfactorily remove the resist film exposed to the plasma etching gas or the ion beam in the dry etching process or the ion implantation process, thereby removing the resist film modified by the dry etching and ion implantation process. Development of a new resist remover was desired.

As described above, it is difficult to remove the resist film that has undergone the ion implantation process with a resist remover. In particular, in the manufacture of ultra-high integrated circuits, a resist having undergone a high dose amount of ion implantation to form a source / drain region It is more difficult to remove the membrane. In the ion implantation process, the resist film is hardened by the high dose amount and the heat of reaction by the high energy ion beam, which hardens the surface of the resist. At the same time, resist puffing may occur, resulting in resist residues. Usually, a semiconductor wafer subjected to an ashing treatment is heated at a high temperature of 200 ° C or higher. At this time, the solvent remaining in the resist must be vaporized and discharged, but since the hardened layer exists on the surface of the resist after the high dose amount of ion implantation process, this becomes impossible.

Therefore, as the ashing progresses, the internal pressure of the resist film increases, and the surface of the resist film ruptures due to the solvent remaining therein. This is called a puffing phenomenon. The surface hardened layer scattered by this puffing phenomenon becomes a residue and is difficult to remove. In addition, since the cured layer on the surface of the resist is formed by heat, a dopant, which is an impurity ion, is substituted in the resist molecular structure to cause a crosslinking reaction, and the site is oxidized by O2 plasma. The oxidized resist thus turns into residues and particles, which are also contaminants and cause a decrease in production yield in the manufacture of ultra-high integrated circuits.

Various dry and wet processes have been proposed to effectively remove the above-mentioned resist hardened layer, and one of them is a two-stage ashing method in which ordinary ashing and secondary ashing are performed [Fujimura, Japan Institute of Spring Application] Vol. 1P-13, p574, 1989. However, these dry etching processes have a disadvantage in that the production yield is reduced due to the complexity of the process and the scale of the equipment.

On the other hand, as a resist remover used in the conventional wet cleaning process, the resist remover composition which mixes an organic amine compound and various organic solvents was proposed. In particular, resist remover compositions containing monoethanolamine (MEA) as an essential component among organic amine compounds are widely used.

For example, a) organic amine compounds such as MEA and 2- (2-aminoethoxy) ethanol (AEE), b) N, N-dimethylacetamide (DMAc), N, N-dimethylformamide (DMF) , A two-component resist remover composition composed of a polar solvent such as N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), carbitol acetate, and methoxyacetoxypropane (US Pat. Nos. 4, 617, 251); a) organic amine compounds such as MEA, monopropanolamine, methylamethanethanol, b) N-methylacetamide (MAc), N, N-dimethylacetamide (DMAc), dimethylformamide (DMF), N, N- Amide solvents such as diethylacetamide (DEAc), N, N-dipropylacetamide (DPAc), N, N-dimethylpropionamide, N, N-diethylbutylamide, N-methyl-N-ethylpropionamide A two-component resist remover composition consisting of US Pat. No. 4,770,713; a) organic amine compounds such as alkanolamine (MEA), b) aprotic polar solvents such as 1,3-dimethyl-2-imidazolidinone (DMI) and 1,3-dimethyl-tetrahydropyrimidinone Two-component resist remover composition consisting of a type (Germany Patent Application No. 3,828,513); a) alkanolamines such as MEA, diethanolamine (DEA) and triethanolamine (TEA) and alkylene polyamines having ethylene oxide of ethylenediamine introduced; b) sulfone compounds such as sulfolane, c) diethylene glycol monoethyl A resist remover composition (Japanese Patent Application Laid-Open No. 62-49355) in which glycol monoalkyl ethers such as ether and diethylene glycol monobutyl ether are mixed at a specific ratio; a) water-soluble amines such as MEA and DEA, b) a resist remover composition containing 1,3-dimethyl-2-imidazolidinone (Japanese Patent Application Laid-Open No. 63-208043); a) a positive resist remover composition comprising a) amines such as MEA, ethylenediamine, piperidine, benzylamine, b) polar solvents such as DMAc, NMP, DMSO, and c) surfactants (Japanese Patent Application Publication No. 63-231343). ); a) a nitrogen-containing organic hydroxy compound such as MEA, b) diethylene glycol monoethyl ether, diethylene glycol dialkyl ether, γ-butyrolactone, and 1,3-dimethyl-2-imidazolinone C) a positive resist remover composition comprising the above solvent and c) DMSO in a specific ratio (Japanese Patent Application Laid-Open No. 64-42653); a) a positive resist remover composition comprising a) an organic amine compound such as MEA, b) aprotic polar solvents such as diethylene glycol monoalkyl ether, DMAc, NMP, DMSO, and c) a phosphate ester-based surfactant (Japanese Patent) Application Publication No. 4-124668); A resist remover composition containing a water-soluble organic amine compound such as a) 1,3-dimethyl-2-imidazolinone (DMI), b) dimethyl sulfoxide (DMSO), and c) MEA (Japanese Patent Application Laid-Open No. 4- 350660); a) MEA, b) DMSO, c) resist remover composition containing catechol (Japanese Patent Application Laid-open No. Hei 5-281753) and the like have been proposed, and these resist remover compositions have safety, workability, and resist removal performance. Shows relatively good characteristics.

However, in recent semiconductor device manufacturing processes, resists are often baked at high temperatures as the processing conditions become harsh, such as processing various substrates including silicon wafers at a high temperature of 110 to 140 ° C. However, the resist remover in the above examples does not have sufficient removal capability for resist baked at high temperature. A resist remover composition containing water and / or a hydroxylamine compound has been proposed as a composition for removing the resist baked at high temperatures. For example, the resist remover composition (Japanese Patent Application Laid-open No. 4-289866) which consists of a) hydroxylamines, b) alkanolamines, and c) water; a resist remover composition composed of a) hydroxylamines, b) alkanolamines, c) water, and d) an anticorrosive agent (Japanese Patent Application Laid-Open No. 6-266119); a resist remover composition containing a) polar solvents such as GBL, DMF, DMAc, NMP, b) amino alcohols such as 2-methylaminoethanol, and c) water (Japanese Patent Application Laid-Open No. 7-69618); a) amino alcohols such as MEA, b) water, and c) butyl diglycol remover composition (Japanese Patent Application Laid-Open No. 8-123043); A resist remover composition containing a) alkanolamines, alkoxyalkylamines, b) glycol monoalkyl ethers, c) sugar alcohols, d) quaternary ammonium hydroxides, and e) water (Japanese Patent Application Laid-Open No. 8-262746). ; Remover composition containing a) at least one alkanolamine of MEA or AEE, b) hydroxylamine, c) diethylene glycol monoalkyl ether, d) sugars (sorbitol), e) water (Japanese Patent Application Laid-Open No. 9-A). 152721); a resist remover composition consisting of a) hydroxylamines, b) water, c) amines having an acid dissociation constant (pKa) of 7.5 to 13, d) a water-soluble organic solvent, and e) an anticorrosive agent (Japanese Patent Application Laid-Open No. 9-96911). This has been proposed.

However, such a resist remover composition is also removed from the resist film cured by the dry etching, ashing and ion implantation processes, and the removal performance of the resist film deteriorated by the metallic by-products etched from the metal film below. There is not enough problem in terms of corrosion protection performance of metal wiring.

Accordingly, the technical problem to be achieved by the present invention is to deteriorate by the resist film hardened by the dry etching, ashing and ion implantation process and the metal by-products etched from the metal film of the lower part of the process to solve the above problems. The present invention provides a resist remover composition which can easily remove a resist film within a short time and can minimize corrosion of a lower metal wiring, particularly a copper wiring.

FIG. 1 is a photograph showing an original state in which a resist pattern 1 covering a metal wiring and a tungsten 2 and a titanium nitride film 3 are deposited from below from 1000 Å and 700 각각 from the bottom, respectively.

FIG. 2 shows a scanning electron micrograph showing the results of a resist removal performance test at 65 ° C. using the resist remover composition of Example 4. FIG.

Figure 3 shows a scanning electron micrograph showing the result of the resist removal performance test at 65 ℃ using the resist remover composition of Comparative Example 1.

The present invention to achieve the above technical problem is (a) 10 to 40 weight of water-soluble organic amine compound, (b) dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc) and dimethyl 40 to 70 weight of at least one water-soluble organic solvent selected from the group consisting of formamide (DMF), (c) 10 to 30 weight of water, (d) 0.1 to 15 weight of organic phenolic compound containing two or three hydroxyl groups, ( ㅁ) A resist remover composition comprising 0.01 to 10 wt% of an anionic compound containing a perfluoroalkyl group and 0.01 to 1 wt% of (iii) a polyoxyethylene alkylamine ether surfactant.

In the resist remover composition according to the present invention, the water-soluble organic amine compound uses an amino alcohol compound, and the amino alcohol compound is 2-amino-1-ethanol, 1-amino-2-propanol, 2-amino-1- At least one organic amine compound selected from the group consisting of propanol, 3-amino-1-propanol, of which 2-amino-1-ethanol is more preferred in terms of resist penetration and swelling properties, viscosity and price.

The content of the water-soluble organic amine compound is preferably 10 to 40 weight. That is, when the content of the water-soluble organic amine compound is less than 10 wt%, it is difficult to completely remove the resist film deteriorated by a dry etching process, and when the content exceeds 40 wt%, the corrosiveness of the lower metal interconnection film such as silicon oxide film and copper becomes excessive. There is this.

In the resist remover composition according to the present invention, the water-soluble organic solvent is selected from the group consisting of dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc) and dimethylformamide (DMF). It is preferably at least one organic solvent, of which N-methylpyrrolidone (NMP) is more preferable in terms of excellent dissolution properties to the resist, prevention of redeposition of the resist, and ease of waste liquid treatment due to fast biodegradation rate. Do.

In the resist remover composition according to the present invention, the composition water is preferably pure water filtered through an ion exchange resin, and more preferably, ultrapure water having a specific resistance of 18 megohms or more.

The water content is preferably 10 to 30 weight. If the content of the water in the resist remover composition according to the present invention is less than 10% by weight, there is a problem in that the ability to remove a resist that is severely deteriorated by metallic by-products generated after the dry etching and ashing processes is reduced. However, if the water content exceeds 30 weights, there is a risk of corrosion of the lower metal wiring during the removal process, the content of the water-soluble organic amine compound of component (a) and the water-soluble organic solvent of component (b) is relatively reduced, The ability to remove most of the unmodified resist except for the structurally modified resist is reduced. The results of the study confirmed that the content of water is most preferably in the 10 to 30 weight range.

In the resist remover composition according to the present invention, the organic phenol compound containing two or three hydroxyl groups is a compound represented by the following Chemical Formula 1:

Here m represents an integer of 2 or 3.

In the resist remover composition according to the present invention, the organic phenol compound containing two or three hydroxyl groups may be formed by etching the resist film cured by dry etching, ashing and ion implantation, and metallic by-products etched from the lower metal film. As a component for removing the modified resist film, the ions generated by the reaction of the water-soluble organic amine compound with the hydrogen ions of water effectively serve to effectively penetrate the contact surface between the resist film and the semiconductor substrate. In addition, the organic phenol compound containing two or three hydroxyl groups exhibits a corrosion preventing effect of preventing the hydroxyl groups generated from the resist remover composition from corroding the lower metal film, which is a conductive layer.

As for content of the organic phenol compound containing two or three said hydroxyl groups, 0.1-10 weight is preferable. If the content of the organic phenol compound is less than 0.1 weight, there is a problem that the ability to remove the resist film that is severely modified by the metal by-products generated after the dry etching and ion implantation process, and the corrosion of the underlying metal film is intensified. When it exceeds 10 weights, it is uneconomical from an industrial viewpoint considering the cost of manufacturing the composition compared to the resist film removing performance.

In the resist remover composition according to the present invention, the anionic compound containing the perfluoroalkyl group is selected from the compounds represented by the following formula (2).

R _f COO ^- M ⁺

R _f SO ₃ ^- M ⁺

R _f SO ₄ ^- M ⁺

R _f OP (O) O ₂ ^2- M ₂ ⁺

Wherein R _f is a fluorinated or partially fluorinated hydrophobic group, for example,

C _n F _{(2n + 1)} -

C _n F _{(2n + 1)} C _m H _{(2m + 1)} -

C _n F _{(2n + 1)} OCF ₂ CF _2-

C _n F _{(2n + 1)} OC ₆ H _4-

C _n F _{(2n + 1)} CONH (CH ₂ ) ₃ N =

C _n F _{(2n + 1)} CH ₂ CH ₂ Si (CH ₃ ) _2-

Here m is an integer of 1-30, n represents the integer of 1-30, respectively.

Although the organic phenol compound containing two or three hydroxyl groups alone may give a distinct corrosion protection effect to the resist remover composition of the present invention, the partial erosion phenomenon occurring at the side or the upper surface of the lower metal interconnection film, ie, fitting The phenomenon cannot be completely solved. As a result, in order to solve this problem, it was found that by using an anionic compound containing a perfluoroalkyl group in an organic phenol compound containing two or three hydroxyl groups, the fitting phenomenon can be prevented. In particular, it has been found that synergistic effects occur when an aromatic phenol compound containing a hydroxyl group and an anionic compound containing a perfluoroalkyl group are added in an appropriate ratio to prevent side fitting occurring on the sidewall of the resist film.

The content of the anionic compound containing the perfluoroalkyl group is preferably 0.1 to 10 weight. If the content of the anionic compound containing a perfluoroalkyl group is less than 0.1 weight, the performance of preventing fitting phenomenon is insignificant, and if it exceeds 10 weight, there is a problem of increasing the viscosity of the resist remover composition to reduce convenience in use.

In the resist remover composition according to the present invention, the polyoxyethylene alkylamine ether-based surfactant is selected from compounds represented by the following formula (3).

Here, R is a C1-C20 alkyl group, m is an integer of 0-30, n represents the integer of 0-30, respectively.

Since the polyoxyethylene alkylamine ether-based surfactant shows the property of a weak cationic surfactant in an aqueous solution according to the number of moles of ethylene oxide added, the resist remover serves to disperse the dissolved resist, thereby reducing the possibility of reattaching the metal film. Can be reduced.

It is preferable that the content of the said polyoxyethylene alkylamine ether type surfactant is 0.01-1 weight.

Hereinafter, the present invention will be described in more detail with reference to Examples, but the scope of the present invention is not limited to the following Examples. On the other hand, in the following examples, unless otherwise stated, percentages and mixing ratios are based on weight. In Examples and Comparative Examples of the present invention, performance evaluation of the resist remover composition was performed by the following method.

(1) resist removal test

Preparation of Specimen A

The final film thickness is obtained by spin-coating a positive resist composition (manufactured by Mitsubishi Corporation, trade name: IS401), which is commonly used on the surface of an 8-inch silicon wafer in which tungsten and titanium nitride films are sequentially deposited from 1000 to 700 Å from below. It applied so that it might be set to 1.01 micrometer. Subsequently, the resist film was pre-baked at 100 ° C. for 90 seconds on a hot plate. Subsequently, after placing a mask having a predetermined pattern on the resist film, ultraviolet rays were irradiated and developed for 60 seconds at 21 ° C. with a 2.38 tetramethylammonium hydroxide (TMAH) developer, and then a specimen on which the resist pattern was formed was formed on a hot plate. Hard bake for 100 seconds at ℃. Using a resist pattern formed on the specimen as a mask, a dry etching apparatus (Hitachi Corp., model name: M318) using an SF ₆ / Cl ₂ mixed gas as an etching gas, the lower tungsten and titanium not covered by the resist pattern for 35 seconds The nitride film was etched to form a metal wiring pattern.

Resist removal test

Specimen A was immersed in a temperature 65 ° C. resist remover composition. Subsequently, the specimens were removed from the resist remover composition, washed with ultrapure water and dried with nitrogen gas, and then examined by scanning electron microscopy (SEM) to determine whether or not resist residues adhered to the periphery of the pattern and the line pattern surface. The resist removal performance was evaluated based on the following criteria and the results are shown in Table 2 below.

(Circle): When the resist residue is completely removed in the line pattern side wall and surface.

(Triangle | delta): When resist residue is removed more than 80 on the line pattern side wall and surface, but a trace remains.

X: When most of the resist residue was not removed in the line pattern sidewalls and the surface.

(2) copper corrosion test

Preparation of Psalm B

A lead frame made of copper used during the semiconductor package process was prepared.

Copper corrosive test

Specimen B was immersed in a temperature 65 ° C. resist remover composition. Subsequently, the specimen was removed from the resist remover composition, washed with ultrapure water, dried with nitrogen gas, and then inspected on the surface of the copper specimen by scanning electron microscopy to evaluate the degree of corrosion based on the criteria as follows. Table 3 shows.

○: no corrosion on copper surface

△: when there is some corrosion on the copper surface

X: When corrosion appeared badly on the copper surface as a whole

Examples 1 to 5 and Comparative Examples 1 to 3

The contents of the components (a) to (iii) were mixed at the ratios shown in Table 1 below to prepare resist remover compositions of Examples 1 to 5 and Comparative Examples 1 to 3, respectively. The resist remover composition thus obtained was subjected to the (1) resist removal test and (2) copper corrosion test described above, and the results are shown in Tables 2 to 3 below.

Composition of Resist Remover Composition Composition (Weight) of Resist Remover Composition (A) organic amine compound Hydroxylamine (B) organic solvent (C) water (D) organic phenolic compounds (ㅁ) Anionic Compound (Iii) surfactants Kinds amount amount Kinds amount amount Kinds amount Kinds amount Kinds amount Example One MEA 20 - NMP 45 20 Catechol 13 FPA-91 1.9 KONIONLM-10 0.1 2 MEA 10 - DMF 55 20 Resorcin 12 FPA-91 2.5 KONIONLM-10 0.5 3 MIPA 15 - DMSO 65 10 Resorcin 5 FPA-91P 4.9 KONIONSM-15 0.1 4 MEA 15 - NMP 65 10 Catechol 8 FPA-91 1.5 KONIONSM-15 0.5 5 MIPA 30 - DMAc 40 25 Catechol 3 FPA-91P One KONIONLM-10 One Comparative example One MEA 5 30 NMP 25 30 Cresol 9 - - PEG One 2 MEA 45 10 DMF 20 10 Cresol 14.5 - - X-100 0.5 3 MIPA 5 45 DMAc 30 15 SA 4.5 - - PEG 0.5

MIPA: monoisopropanolamine

MEA: Monoethanolamine

DMSO: Dimethyl Sulfoxide

DMF: Dimethylformamide

NMP: N-methylpyrrolidone

DMAc: Dimethylacetamide

FPA-91: An anionic compound containing a fluoroalkyl group (product of DIC Corporation)

FPA-91P: Anionic compound containing fluoroalkyl group (product of DIC Corporation)

KONION LM-10: Polyoxyethylene Alkylamine Ether (Products of Korea Polyol Co., Ltd.)

KONION SM-15: Polyoxyethylene alkylamine ether (product of Korea Polyol Co., Ltd.)

KONIOM SM-10: Polyoxyethylene alkylamine ether (product of Korea Polyol Co., Ltd.)

SA: Salicylic aldehyde

Resist removal performance of resist remover composition Immersion time 5 minutes 10 minutes 20 minutes Example One ○ ○ ○ 2 ○ ○ ○ 3 △ ○ ○ 4 ○ ○ ○ 5 △ ○ ○ Comparative example One × × × 2 × △ △ 3 × △ △

1 to 3 show a scanning electron microscope (Hitachi Corporation, model name; S-4100) photograph comparing the resist remover performance of the resist remover composition of Example 4 with that of the resist remover composition of Comparative Example 1. FIG. 1 to 3 show the results of the test of specimen A with the temperature of the resist remover composition at 65 ° C.

Referring to Fig. 1, it is possible to confirm the original state in which the resist pattern 1 covering the metal wiring and the tungsten 2 and the titanium nitride film 3 are deposited in order from below from 1000 Å and 700 각각, respectively, from below.

Figure 2 shows a scanning electron micrograph showing the result of the resist removal performance test at 65 ℃ using the resist remover composition of Example 4.

Figure 3 shows a scanning electron micrograph showing the result of the resist removal performance test at 65 ℃ using the resist remover composition of Comparative Example 1.

Metal wiring corrosion test Immersion time 5 minutes 10 minutes 20 minutes Example One ○ ○ △ 2 ○ ○ ○ 3 ○ ○ ○ 4 ○ ○ △ 5 ○ ○ ○ Comparative example One △ △ × 2 ○ △ × 3 ○ ○ ×

As described above, the resist remover composition according to the present invention also has a resist film modified by a resist film cured by a dry etching, ashing and ion implantation process, and a metallic by-product etched from the metal film at the bottom of the process. It can be removed easily. In addition, it is possible to minimize corrosion of the lower metal wiring, especially copper wiring, during the resist removal process, and to rinse with water only in the subsequent rinsing process without using organic solvents such as isopropyl alcohol and dimethyl sulfoxide. have.

Claims (6)

(A) 10-40 weight of water-soluble organic amine compound, (b) dimethylsulfoxide (DMSO), (c) N-methylpyrrolidone (NMP), dimethylacetamide (DMAc) and dimethylformamide (DMF) 40 to 70 weight of one or more water-soluble organic solvents selected from the group, (d) 10 to 30 weight of water, 5 to 15 weight of organic phenolic compounds containing two or three hydroxyl groups, and (ㅁ) not containing perfluoroalkyl groups. The resist remover composition containing 0.5-5 weight of warming compounds, and 0.01-1 weight of (iii) polyoxyethylene alkylamine ether type surfactant. The method of claim 1, The water-soluble organic amine compound is a resist remover composition, characterized in that the amino alcohol compound. The method of claim 2, The amino alcohol compound is a resist, characterized in that at least one compound selected from the group consisting of 2-amino-1-ethanol, 1-amino-2-propanol, 2-amino-1-propanol, 3-amino-1-propanol Remover composition. The method of claim 1, The organic phenolic compound containing two or three hydroxyl groups is a resist remover composition, characterized in that the phenolic compound represented by the following formula (1): <Formula 1> Here, m represents the integer of 2 or 3. The method of claim 1, The anionic compound containing the perfluoroalkyl group is a resist remover composition, characterized in that the compound selected from the group consisting of compounds represented by the following formula (2): <Formula 2> R _f COO ^- M ⁺ R _f SO ₃ ^- M ⁺ R _f SO ₄ ^- M ⁺ R _f OP (O) O ₂ ^2- M ₂ ⁺ Wherein R _f is a fluorinated or partially fluorinated hydrophobic group, M ⁺ is an inorganic or organic counterion, R _f is one group selected from the group represented by the following formula, C _n F _{(2n + 1)} - C _n F _{(2n + 1)} C _m H _{(2m + 1)} - C _n F _{(2n + 1)} OCF ₂ CF _2- C _n F _{(2n + 1)} OC ₆ H _4- C _n F _{(2n + 1)} CONH (CH ₂ ) ₃ N = C _n F _{(2n + 1)} CH ₂ CH ₂ Si (CH ₃ ) _2- Here m is an integer of 1-30, n represents the integer of 1-30, respectively. The method of claim 1, The polyoxyethylene alkylamine ether-based surfactant is a resist remover composition, characterized in that the compound represented by the following formula (3): <Formula 3> Here, R is a C1-C20 alkyl group, m is an integer of 0-30, n represents the integer of 0-30, respectively.