KR20040083157A - Stripper composition for photoresist - Google Patents

Abstract

PURPOSE: Provided is a stripper composition, which has excellent solubility to a photoresist, can easily peel a modified photoresist film and minimizes the corrosion of metal lines during and after a peeling process. CONSTITUTION: The stripper composition for a photoresist comprises 5-20 wt% of an alkanol amine, 15-40 wt% of an alkylamide, 35-75 wt% of a glycol ether, and 0.1-5 wt% of an anti-corrosive agent containing at least one compound selected from the group consisting of 3-hydroxy-2-methyl-4-pyrone, 2-ethyl-3-hydroxy-4-pyrone, 5,5-dimethylhydantoin, hydantoin, 4,4-ethylene bisphenol, 1,2,4-triazole, 5-phenyl-1H-tetrazole.

Description

Stripper composition for photoresist

The present invention relates to a stripper composition for photoresist. Specifically, it is used in a semiconductor integrated circuit or a liquid crystal display manufacturing process, has excellent peelability to photoresist and photoresist deterioration film, and excellent antiseptic property of substrate under high temperature treatment condition and cleaning condition, and using the same It relates to a photoresist stripping method.

The photoresist process is used to manufacture semiconductor devices such as integrated circuits (ICs), high integrated circuits (LSI), and ultra high integrated circuits (VLSI), and image realization devices such as liquid crystal display (LCD) and flat panel display (PDP). Used to manufacture microcircuits. In general, in such a process, an insulating film such as a silicon oxide film and a conductive thin film such as a metal film for circuit wiring are first formed on a semiconductor substrate or a glass substrate, and a photoresist composition is uniformly coated thereon. Subsequently, high energy active rays such as ultraviolet rays, electron beams, or X-rays are irradiated to the photoresist film through a mask having a predetermined pattern, and a developing process is performed to form a desired resist pattern. Subsequently, the lower substrate is etched using the resist pattern as an etch mask to form a predetermined pattern inside the substrate, and then the resist pattern remaining on the formed substrate is completely removed using the stripper composition.

In recent years, semiconductor integrated circuits or liquid crystal display manufacturing processes tend to have ultra-fine processing patterns in order to improve the degree of integration. Therefore, the etching method of the metal film and the oxide film is complicated, and dry etching and ashing (in addition to conventional wet etching) are performed. The process of etching the metal film and the oxide film through an ashing process is introduced. As the circuit formation process becomes more complicated, the generation of a modified photoresist film, which is difficult to remove with a conventional stripper composition, such as thermal crosslinking reaction of the photoresist film and generation of organic and inorganic oxides, is increasing. Therefore, the stripper for removing the photoresist generally has excellent peelability of the modified photoresist film, no impurity fine particles remain on the substrate during peeling, and should not corrode a metal film such as aluminum.

Corrosion of the metal film may be generated by the stripper during the peeling process of the photoresist or may occur during the rinsing process. The general peeling process consists of removing the photoresist by stripper and then moving to the rinse process to remove stripper in which most of the photoresist is dissolved by air knife, and removing the remaining stripper on the surface of the substrate with ultrapure water and then drying. . At this time, the metal film is exposed during the peeling process and the rinse process of the photoresist, and it is known that corrosion occurs in this process. In the case of strippers using conventional alkanol amines, when a large amount of water is mixed with alkanol amines remaining on the surface of the substrate and the substrate carrier in a post-stripping water rinse rather than corrosion caused by the peeling process of the photoresist. It is known that the degree of corrosion caused by ionization is greater. In order to solve this problem, an intermediate cleaning step of removing the stripper composition using an organic solvent such as isopropyl alcohol before the cleaning of the ultrapure water after the peeling process of the photoresist has been used in the process. However, such intermediate cleaning is not preferred because it complicates the overall stripping operation and also generates additional solvent wastewater. Therefore, even in the case of using a stripper containing an alkanol amine, it is necessary to develop a technology capable of eliminating this intermediate cleaning step and solving the corrosion problem of the metal film.

As stripper compositions for photoresists currently used in semiconductor integrated circuits and liquid crystal displays, stripping liquids containing ethylene oxide additives of alkanol amines or polyalkylene polyamines, sulfone compounds and glycol monoalkyl ethers (Japanese Patent Application Laid-Open No. 62-49355) ; A stripping solution containing dimethyl sulfoxide, diethylene glycol monoalkyl ether and nitrogen-containing organic hydroxy compounds as main components (Japanese Patent Publication No. 64-42653), and the like, and an aqueous solution containing a fluorine compound, an amide, a dimethyl sulfoxide solvent, and the like. Corrosion inhibitors are also used as resist strippers because of their high peel strength and simplicity. (Japanese Patent Application Laid-Open No. 8-202052 and US Patent No. 5,962,385).

In addition, Japanese Patent Laid-Open No. 8-87118 discloses a composition consisting of 50 to 90% by weight of N-alkylalkanolamine, 50 to 10% by weight of dimethyl sulfoxide or N-methyl-2-pyrrolidone, Similarly, by using a solvent composed of N-alkylalkanolamine and a specific organic solvent as a release agent, it is described that insoluble matters do not occur even under severe high-temperature peeling conditions, and microparticles do not remain on the substrate. However, these alkaline stripping liquids are alkaline due to the amine liberated from the additive product by the action of water absorbed in the process, or become alkaline during cleaning when washed with water instead of an organic solvent such as alcohol after the photoresist stripping process. It causes severe corrosion on aluminum, a widely used material to form metals. The above stripping solutions are therefore not suitable for use in microprocessing techniques that require stringent dimensional precision conditions in recent years.

On the other hand, Japanese Patent Laid-Open No. 4-124668 discloses 20 to 90% by weight of organic amine, 0.1 to 20% by weight of phosphate ester surfactant, 0.1 to 20% by weight of 2-butyne-1,4-diol and the balance of glycol monoalkyl ether. And or a photoresist stripping composition comprising an aprotic polar solvent, wherein the 2-butyne-1,4-diol and phosphate ester surfactant are organic amines absorbed into the photoresist without limiting the peeling characteristics. It is described that it was added in order to prevent corrosion of metal layers such as aluminum and copper.

An object of the present invention is excellent solubility in photoresist, it is possible to easily peel off the modified photoresist film modified by dry and wet etching and heat, it is possible to minimize the corrosion of the metal wiring during the peeling process, in particular the peeling process The present invention provides a stripper composition for photoresist that is less corrosive to metal wiring such as aluminum even when directly washed with water without undergoing an intermediate washing step using an organic solvent such as isopropyl alcohol.

The present invention relates to a stripper composition for a photoresist comprising 5 to 20% by weight of alkanolamine, 15 to 40% by weight of alkylamide, 35 to 75% by weight of glycol ether and 0.1 to 5% by weight of corrosion inhibitor. .

The corrosion inhibitor plays a role of reducing corrosion on metal wires such as aluminum even though it is immediately rinsed with ultrapure water after the stripping process of photoresist, and 3-hydroxy-2-methyl-4-pyron (3-hydroxy-2-methyl -4-pyrone), 2-ethyl-3-hydroxy-4-pyrone, 5,5-dimethyl hydantoin, hydantoin (hydantoin), 4,4-ethylene bisphenol, 1,2,4-triazole, 5-phenyl-1H-tetrazole (5-phenyl- 1H-tetrazole) containing at least one substance selected from.

The amount of corrosion inhibitor used in the stripper composition for photoresists of the present invention is selected in the range of 0.1 to 5% by weight. If the content is less than 0.1% by weight, the corrosion protection effect of the metal wiring such as aluminum is less, and if it exceeds 5% by weight, the peeling rate of the resist film after the etching process is significantly lowered, the photoresist film is not completely peeled off.

The alkanol amines used in the stripper composition for photoresists of the present invention serve to exfoliate the photoresist and are monoethanolamine, monoisopropanolamine, 2- (2-aminoethoxy) ethanol and 2- (2-aminoethyl Amino) ethanol, N-methylethanolamine, N-ethylethanolamine, N, N-dimethylethanolamine, N, N-diethylethanolamine.

The amount of alkanolamines is selected in the range of 5 to 20% by weight. If the content is less than 5% by weight, the photoresist peeling performance is lowered, and the remaining photoresist film is left. If the content exceeds 20% by weight, the corrosion of the metal wiring increases when the rinse immediately with ultrapure water after the strip process causes the product defect. This requires an additional process of removing the remaining stripper with an organic solvent such as isopropanol and then rinsing with ultrapure water.

The alkylamides are excellent in solubility in the polymer resin constituting the photoresist, are very well mixed with water, non-ionic and can shorten the wetting time in the stripping process, and are easily in water because of their compact molecular structure. It is mobile and plays a role of significantly lowering the interfacial tension. It is selected from N, N-dimethylformamide, N, N-dimethylacetamide, N, N-diethylformamide, and N, N-diethylacetamide. The content is selected in the range of 15 to 40% by weight.

The glycol ether not only acts as a solvent for dissolving the photoresist with alkylamide, but also minimizes the change in composition and evaporation loss due to heating even after a long stripping process, thereby maximizing the replacement cycle of the stripper composition. Glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, propylene glycol methyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, dipropylene glycol Monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether.

The glycol ether used in the stripper composition for photoresists of the present invention is selected in the range of 35 to 75% by weight.

Hereinafter, an Example is given and this invention is demonstrated concretely. However, the scope of the present invention is not limited only to the following examples. In the Examples and Comparative Examples of the present invention, the percentage and the mixing ratio are based on the weight unless otherwise stated.

Example

Next, according to the composition components and composition ratios shown in Table 1, the stripper composition of the present invention was prepared as in Examples 1 to 15, and a stripper composition contrasted with this was prepared as in Comparative Examples 1 to 8.

Composition of stripper composition division Composition of stripper composition Alkanol amines Alkyl pyrrolidone alkyl amides Glycol ether Corrosion inhibitor Kinds amount Kinds amount Kinds amount Kinds amount Example One MIPA 10 DMAc 25 BDG 64.8 Maltol 0.2 2 DGA 10 DMAc 25 BDG 64.8 E-Maltol 0.2 3 DGA 10 DMAc 25 BDG 62 DMH 3 4 MIPA 10 DMAc 30 BDG 59.5 Maltol 0.5 5 MIPA 10 DMAc 30 BDG 58 DMH 2 6 DGA 10 DMAc 30 BDG 59.5 E-Maltol 0.5 7 MIPA 10 DMAc 20 BDG / EDG 39.7 / 30 Maltol 0.3 8 MIPA 10 DMAc 20 BDG / EDG 37/30 DMH 3 9 DGA 10 DMAc 20 BDG / EDG 39.7 / 30 Maltol 0.3 10 MIPA 10 DMAc 25 BDG / EDG 39/25 E-Maltol One 11 DGA 10 DMAc 25 BDG / EDG 39/25 Maltol One 12 DGA 10 DMAc 25 BDG / EDG 38/25 DMH 2 13 MIPA 10 DMAc 20 BDG 69.5 Maltol 0.5 14 MIPA 10 DMAc 20 BDG 67 DMH 3 15 DGA 10 DMAc 20 BDG 67 DMH 3 Comparative example One MEA 5 NEP 25 BDG 70 - - 2 DEA 15 DMF 15 EG 70 - - 3 MEA 10 DMSO 20 MDG 70 - - 4 TEA 10 NEP 15 BDG 75 - - 5 MEA 10 NMP 30 BDG 57 8-HQ 3 6 MEA / NMEA 10/10 - - BDG 80 - - 7 MEA 30 - - BDG 70 - - 8 MEA 10 NMP 40 BDG 50 - - MEA: monoethanolamine DEA: diethanolamine TEA: triethanolamine MIPA: monoisopropanolamine DGA: 2- (2-aminoethoxy) ethanol NMEA: N-methylethanolamine NMP: N-methylpyrrolidone NEP: N- Ethyl pyrrolidone DMSO: Dimethyl sulfoxide DMAc: N, N-dimethylacetamide DMF: N, N-dimethylformamide BDG: Diethylene glycol monobutyl ether EDG: Diethylene glycol monoethyl ether MDG: Diethylene glycol monomethyl Ether EG: ethylene glycol Maltol: 3-hydroxy-2-methyl-4-pyrone DMH: 5,5-dimethylhydantoin 8-HQ: 8-hydroxyquinoline E-Maltol: 2-ethyl-3-hydroxy- 4-pylon

1. Peeling performance

Specimen Manufacturing

After applying a positive photoresist on a 0.7 mm × 20 mm × 20 mm glass substrate on which aluminum (Al), chromium (Cr), molybdenum (Mo), or a-Si (amorphous silicon) was deposited to a thickness of 2000Å, The coated photorest was dried by heat treatment at 110 ° C. for 90 seconds on a hot plate. The film thickness of the photoresist after drying was 1.5 탆. The photoresist used at this time was a positive photoresist (JPP-1800) manufactured by JEON Japan.

After irradiating ultraviolet rays with a mask having a predetermined pattern formed on the photoresist layer and developing with 2.38% tetramethylammonium hydroxide (TMAH) developer, the specimens were heated at 130 ° C, 150 ° C, 170 ° C or 190 on a hot plate. Hard-baking was carried out at 3 ° C. for 3 minutes to form a predetermined pattern on the Al, Cr, Mo or a-Si film. After the wet etching process or the dry etching process by plasma immersing the specimen in an etching solution to form a metal film pattern, it was rinsed with ultrapure water and dried with nitrogen gas.

Peel test

The peeling performance of the stripper composition on the photoresist of the specimen prepared by the specimen manufacturing method was tested by varying the type of metal deposition film and the hard bake temperature, and the results are shown in the following [Table 2] to [Table 5].

Peeling performance test was performed by immersing each of the above specimens in a stripper at 70 ° C. for 3 minutes, then rinsing with ultrapure water, dried with nitrogen gas, and remaining photoresist on the surface of the metal film pattern and the space between the lines with a scanning electron microscope. The observation of water shows the result.

◎: Completely removed (about 100% removed)

○: Almost completely removed (90% or more)

△: partial residue (80 to 90% removal)

×: large amount of residue (removed below 80%)

Comparative test of photoresist peeling performance in Al film quality Stripper temperature 70 ℃ Hard Baking Temperature 130 ℃ 150 ℃ 170 ℃ 190 ℃ Example One ◎ ◎ ◎ ◎ 2 ◎ ◎ ◎ ◎ 4 ◎ ◎ ◎ ◎ 5 ◎ ◎ ◎ ○ 7 ◎ ◎ ◎ ◎ 9 ◎ ◎ ◎ ◎ 10 ◎ ◎ ◎ ◎ 12 ◎ ◎ ◎ ◎ 13 ◎ ◎ ◎ ◎ 14 ◎ ◎ ◎ ○ Comparative example One ◎ ○ △ ○ 2 ◎ ○ △ ○ 3 ◎ ◎ ○ △ 4 ◎ ○ △ ○ 5 ◎ ◎ ○ △

Comparative test of photoresist peeling performance in Cr film quality Stripper temperature 70 ℃ Hard Baking Temperature 130 ℃ 150 ℃ 170 ℃ 190 ℃ Example One ◎ ◎ ◎ ◎ 2 ◎ ◎ ◎ ○ 4 ◎ ◎ ◎ ◎ 5 ◎ ◎ ◎ ◎ 7 ◎ ◎ ◎ ◎ 9 ◎ ◎ ◎ ◎ 10 ◎ ◎ ◎ ◎ 12 ◎ ◎ ◎ ○ 13 ◎ ◎ ◎ ◎ 14 ◎ ◎ ◎ ○ Comparative example One ◎ ○ △ ○ 2 ◎ ○ △ ○ 3 ◎ ◎ ○ △ 4 ◎ ○ △ ○ 5 ◎ ◎ ○ △

Comparative test of photoresist peeling performance in Mo film quality Stripper temperature 70 ℃ Hard Baking Temperature 130 ℃ 150 ℃ 170 ℃ 190 ℃ Example One ◎ ◎ ◎ ◎ 2 ◎ ◎ ◎ ○ 4 ◎ ◎ ◎ ◎ 5 ◎ ◎ ◎ ◎ 7 ◎ ◎ ◎ ◎ 9 ◎ ◎ ◎ ○ 10 ◎ ◎ ◎ ◎ 12 ◎ ◎ ◎ ○ 13 ◎ ◎ ◎ ◎ 14 ◎ ◎ ◎ ◎ Comparative example One ◎ ○ △ ○ 2 ◎ ○ △ ○ 3 ◎ ◎ ○ ○ 4 ◎ ○ △ ○ 5 ◎ ◎ ○ △

Comparative test of photoresist peeling performance in a-Si film quality Stripper temperature 70 ℃ Hard Baking Temperature 130 ℃ 150 ℃ 170 ℃ 190 ℃ Example One ◎ ◎ ◎ ◎ 2 ◎ ◎ ◎ ○ 4 ◎ ◎ ◎ ◎ 5 ◎ ◎ ◎ ○ 7 ◎ ◎ ◎ ◎ 9 ◎ ◎ ◎ ◎ 10 ◎ ◎ ◎ ◎ 12 ◎ ◎ ◎ ○ 13 ◎ ◎ ◎ ◎ 14 ◎ ◎ ◎ ○ Comparative example One ◎ ○ △ ○ 2 ◎ △ ○ ○ 3 ◎ ◎ ○ △ 4 ◎ ○ △ ○ 5 ◎ ◎ ○ △

As shown in Tables 2 to 5, the stripper compositions of Examples 1 to 14 exhibited good peeling performance regardless of film quality, but the stripper compositions of Comparative Examples 1 to 5 had good peeling performance when the hard bake temperature was 130 ° C. However, it can be seen that as the hard bake temperature increases, the peeling performance decreases.

2. Service life of stripper composition

The stripper composition was subjected to a stripping process of 0, 1000, 2000, 3000, and 4000 sheets of the specimen 1, and the metal wiring was formed by forming an Al film and peeling the hard bake at 130 ° C and 160 ° C. The test was performed by immersing in a stripper composition at 70 ° C. for 3 minutes, then rinsing with ultrapure water, dried with nitrogen gas, and observing photoresist residues on the surface of the metal film pattern and the space between the lines with a scanning electron microscope. Is shown in the following [Table 6].

Service life comparison test of stripper composition Specimen Processing 0 sheets 1,000 sheets 2,000 sheets 3,000 sheets 4,000 sheets Hard Baking Temperature 130 ℃ 160 ℃ 130 ℃ 160 ℃ 130 ℃ 160 ℃ 130 ℃ 160 ℃ 130 ℃ 160 ℃ Example One ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 2 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ○ 4 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 5 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 7 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 9 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 10 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ○ 12 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ○ 13 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 14 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ○ Comparative example One ◎ ○ ◎ △ ○ ○ △ ○ ○ ○ 2 ◎ △ ◎ △ ◎ ○ ○ ○ ○ ○ 3 ◎ ○ ◎ ○ ◎ △ ○ ○ ○ ○ 4 ◎ ○ ◎ △ ○ △ ○ ○ ○ ○ 5 ◎ ○ ◎ △ ○ ○ ○ ○ ○ ○

As shown in Table 6, the stripper compositions of Examples 1, 4, 5, 7, 9 or 13 were prepared with the initial stripper composition for the photoresist hard-baked at 130 ° C. and 160 ° C., even after 4000 specimens were processed. The stripper composition of Example 2, 10, 12, or 14 exhibited the same level of peeling performance. Although shown, it turns out that peeling force begins to fall rather than the initial stripper composition in the state which processed 4000 sheets of specimens. In the stripper compositions of Comparative Examples 1 to 5, the stripper composition exhibited the same peeling performance as the initial stripper composition with respect to the photoresist hard-baked at 130 ° C. in the state where 1000 specimens were treated, but 2000 specimens were treated. From the state, it turns out that the peeling force of a stripper composition begins to fall. In addition, it can be seen that the peeling ability of the photoresist hard-baked at 160 ° C. decreased from the beginning.

3. Corrosion of metal wiring

1) Comparison test of metal wire dissolution

According to the peeling performance test method, 0.7 mm × 50 mm × 50 mm sized specimens made of aluminum (Al) and molybdenum (Mo) were immersed in 1 kg of a 70 ° C. stripper composition, respectively, for 5 hours, 10 hours, 24 hours, and After 48 hours, the elution amount of Al and Mo eluted by sampling the stripper composition was measured by ICP-MS (Inductively Coupled Plasma-Mass Spectroscopy) and the results are shown in [Table 7].

Metallic Wire Dissolution Comparison Test Immersion time (hr) Al elution (ppb) Mo elution amount (ppb) 5 10 24 48 5 10 24 48 Example 2 1.6 2.2 3.1 5.3 7.2 13.3 26.7 51.6 3 1.2 1.8 2.6 4.4 7.5 14.7 28.3 55.3 4 1.4 1.9 2.8 4.7 3.2 7.8 14.6 29.2 5 0.8 1.1 1.9 3.8 2.8 6.5 12.2 24.9 6 1.5 2.0 3.4 5.7 7.5 14.8 29.1 59.2 8 1.6 2.0 3.2 5.5 4.2 8.6 16.4 31.5 10 1.5 1.9 3.4 5.5 3.5 7.2 14.3 28.9 12 1.4 1.8 2.8 4.9 7.6 15.2 32.2 62.3 13 0.9 1.5 2.3 4.2 3.1 8.2 30.8 59.6 15 1.1 1.7 2.6 4.5 7.2 14.7 35.6 67.2 Comparative example 4 3.8 5.2 9.3 21.5 8.5 19.3 42.9 80.2 5 4.6 8.4 17.9 33.1 10.8 23.6 48.4 88.6 6 5.8 11.2 23.1 48.2 13.2 29.1 62.7 131.3 7 6.1 12.1 26.2 52.5 21.3 43.8 88.8 172.4 8 2.6 3.6 7.2 13.3 12.7 25.2 58.4 122.9

As shown in Table 7, it can be seen that the stripper compositions of Examples 2 to 15 have less corrosion of Al and Mo than the stripper compositions of Comparative Examples 4 to 8.

2) Comparative test for corrosion prevention of ultrapure water rinse

Specimen Manufacturing

A pattern-free single film was formed on a glass substrate of 0.7 mm x 20 mm x 20 mm with a thickness of 10,000 mm in Al.

The specimen was immersed for 1 minute in a solution of 0.5 wt% hydrofluoric acid (25 ° C.). The specimens were taken out, washed with ultrapure water and dried over nitrogen gas.

Etch Rate Measurement

In order to measure the thickness of the specimen by FPP (Four Point Probe) and to evaluate the corrosion state, a solution (stripper: ultrapure water = 1: 9 (weight ratio)) in which water was added to the stripper of the composition of Table 1 was prepared in advance. To measure the film thickness at 25 ° C for 1 hour. After removing the specimen, it was washed with ultrapure water, dried with nitrogen gas, and the film thickness was measured by Four Point Probe (FPP).

Comparative test of etching rate of Al single layer Etching Speed of Al Single Film (Å / min) Example 2 49.3 3 34.2 4 36.4 5 47.3 6 43.6 8 40.1 10 40.6 12 42.8 13 37.1 15 34.8 Comparative example 4 103.2 5 92.6 6 160.2 7 158.2 8 98.6

As shown in Table 8, it can be seen that the stripper compositions of Examples 2 to 15 have a lower etching rate of the Al single layer than the stripper compositions of Comparative Examples 4 to 8. Stripper compositions containing corrosion inhibitors of 3-hydroxy-2-methyl-4-pyrone, 5,5-dimethylhydantoin do not contain corrosion inhibitors, or the etching rate of Al monolayers is higher than that of stripper compositions containing other corrosion inhibitors. Since it becomes small, it turns out that the effect of the corrosion protection of 3-hydroxy-2- methyl-4- pyrone and 5.5- dimethyl hydantoin is large.

Stripper composition of the present invention has a good peeling performance to the resist, the stripper decreases due to evaporation even when repeated use, the change in the component content is small to maintain a uniform peeling performance, organic solvents such as isopropanol after the photoresist peeling process It is possible to rinse directly with ultrapure water without using an intermediate cleaning step, and even if it is rinsed with ultrapure water, it has the effect of increasing the productivity, such as process shortening, because it possesses less corrosion on metal wiring such as aluminum.

Claims (4)

In stripper compositions for photoresists, 5 to 20% by weight of alkanol amines, 15 to 40% by weight of alkylamides, 35 to 75% by weight of glycol ethers and 3-hydroxy-2-methyl-4-pyrone, 2-ethyl- At least one substance selected from 3-hydroxy-4-pyrone, 5,5-dimethylhydantoin, hydantoin, 4,4-ethylene bisphenol, 1,2,4-triazole, 5-phenyl-1H-tetrazole Stripper composition for a photoresist composed of 0.1 to 5% by weight of a corrosion inhibitor containing the above. The method of claim 1, wherein the alkanolamine is monoethanolamine, monoisopropanolamine, 2- (2-aminoethoxy) ethanol, 2- (2-aminoethylamino) ethanol, N-methylethanolamine, N-ethyl Stripper composition for photoresist selected from ethanolamine, N, N-dimethylethanolamine, N, N-diethylethanolamine. The photoresist of claim 1, wherein the alkylamide is selected from N, N-dimethylformamide, N, N-dimethylacetamide, N, N-diethylformamide, and N, N-diethylacetamide. Stripper composition. The method of claim 1, wherein the glycol ether is ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, propylene glycol methyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether And a stripper composition for photoresist selected from triethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, and dipropylene glycol monobutyl ether.