1246718 15568twfdoc/g 九、發明說明： 【發明所屬之技術領域】 本發明是有關於—4^ ψ it ^,ι 種形成圖案化材料層的方法衣程，且特別是有關於 【先前技術】 顯示求與日遽增，因«界全力投入相關 因且右供‘二’二口’又以陰極射線管（Cathode Ray Tube) 口^P S口質與技術成熟性，因此長年獨佔顯示 2二近來由於綠色環保概念的興起對於其能源 f耗較大與產生輻射量較大的躲，加上產μ平化空間 ^限，因此無法滿足市場對於輕、薄、短、小、美以及低 〔耗功率的市％趨勢。因此，具有高晝質、空間利用效率 ^ m低’肖耗功率、低輪射等優越特性之薄膜電晶體液晶顯 (Thin Film Transistor Liquid Crystal Display, TFT-LCD)已逐漸成為市場之主流。 以薄膜電晶體液晶顯示模組（TFT_LCE) module)而 口八气要係由一液晶顯示面板（liquid crystal display PanQd )及一背光模組（back light module )所構成。其中， 液曰曰顯示面板通常是由一薄膜電晶體陣列基板（thin film transistor array substrate)、一彩色濾光基板（c〇1〇r 忉如 substrate)與配置於此兩基板間之一液晶層所構成，而背 光模組用以提供此液晶顯示面板所需之面光源，以使液晶 顯示模組達到顯示的效果。 無論是薄膜電晶體陣列基板的製造方法或是彩色濾 5 1246718 15568twf.doc/g 光基板的製造方法均採用大量的微影製程與 ，盆 光製程與顯影製程。就形成_ 、，屬曰6方法而5，在—基板上依序形成—金屬層與一光 阻層，然後在對於光阻層依序進行曝光製程 以形成圖案化光阻層。接著，以其〜衣紅 於金屬層進行侧，㈣· 金制。縣 = 阻剝除案化光阻層，轉露㈣案化金屬層。 值得注意的是’光阻剝除液的成分包括單乙醇胺 (m〇noethanolamine, MEA )與二甲基亞石風 (dimethylsulf0xide，DMs〇 )。由於 DMS〇 為有機 且對於環境影響相當大，因此處理含有DMS〇之廢水的成 本也就相對較高。此外，DMS()的魅為攝氏18.5度，因 此儲存DMSO的容器必須具有保溫功能。值得—提的是， 在使用含有DMSO之光阻剝除液去除圖案化光阻層之 後通系而要進行額外的清洗製程，以減少光阻剝除液對 於圖案化金屬層的污染。換言之，使用含有DMS〇之光阻 剝除液不僅產生大量的廢水，更可能對於圖案化金屬層造 成污染或損傷。 【發明内容】 有鑒於此，本發明的目的就是在提供一種形成圖案化 材料層的方法，以減輕製程廢水的毒性。 基於上述目的或其他目的，本發明提出一種形成圖案 化材料層的方法，其至少包括下列步驟。在一基板上形成 一材料層，然後在材料層上形成一圖案化正型光阻層。以 1246718 15568twf.doc/g 圖案化正型光阻層為遮罩蝕刻材 阻層進行-第-曝光製程。再來，i行光 以移除圖案化正型光阻層。 卜'〜衣权， 的光=、本ΓΓ交佳實施例’上述之第-曝光製程所使用 間此外，紫― 依照本發賴佳實關，上述U ^顯影㈣-錢祕減或Z麵鹼 f f性溶液例如是四甲基氫氧倾（tet職ethyl amm〇nium Ζ^ΜΑΗ)。另外，無跡⑽賴如是氫氧化納 (NaOH)或虱氧化钾（koh)。 依照本發明較佳實施例，上述之形成圖案化正型光阻 層之方法例如是在材料層上形成—正型光阻層。然後，對 於正型光阻層進行―第二曝光製程。接著，進行_第二顯 影製程，以形成圖案化正型光阻層。上述之第二曝光製程 與第一曝光製程所使用的光源可以是相同。此外，上述之 第二顯影製程與第一顯影製程所使用的顯影液種類可以是 相同。 依妝本發明較佳實施例，上述之材料層可以是一有機 材料層或一無機材料層。此外，材料層也可以是一介電層、 一半導體層或一導體層，其中導體層例如是一金屬層或一 透明導體層。此外，透明導體層之材質例如是銦錫氧化物 (indium tin oxide, 1丁〇）、_辞氧化物（incjium zinc 〇xide， IZO)或鋅銘氧化物（aiuminurn zinc oxide，AZO)。 1246718 15568twf.doc/g :『本:明較佳實施例’上述之圖案化 ultra-violet，DUV)光阻等。 eep 光"ΐ於制對於圖纽細層再次進行曝 iri广f 移除圖案化光阻層，因此本發明所 產生的廢水不會含有光阻剝除液（DMSO)。換古之，相 較:習^使用光阻剝除液（DMs〇)，本發明的財 父且所產生的廢水的毒性也較小。 為讓本俩之上述和其他目的、舰和伽明 ^下了文特舉較佳實施例，並配合所附圖式，作詳細說 【實施方式】 圖1A S a ^會示依照本發明較佳實施例之形成圖荦 :材料層的方法的示意圖。請先參照圖1A，本實：： f圖案化材料層的方法至少包括下列步驟。私，提供一 11G ’而此基板UG例如是石英基板、玻璃基板、塑 f基板、石夕晶圓或是其他材質所形成的基板。然後，在基 =110上形成-材料層12〇，其中材料層12〇例如是一介 ，層、-半導體層、一導體層、一有機材料層或一益機材 ，層。此夕卜，材料層！20可以是—金屬層或—透明材料層， 其中透明材料層之材質例如是銦錫氧化物、銦鋅氧化物、 鋅鋁氧化物或其他透明導電材質。 換言之，本實施例並不限定材料層12〇的種類，因此 形成材料層120的方法則依據材料層12〇的種類而有所不 Ϊ246718 15568twf.doc/g 同。舉例而言，形成材料層120的方法例如是蒸鍍製程、 濺鍍製程、化學氣相沈積製程、物理氣相沈積製程 他成膜製程。 、 / 然後’在材料層120上形成一圖案化正型光阻層 其中圖案化正型光阻層130依據曝光波長不同可以是 G]ine 光阻（436nm)、Hhle 光阻（365nm)、H_Hne 光 阻（405mn)、DUV光阻或其他正型光阻等。舉例而古， Gjine光阻與光阻可以是在雙氮基°奈 (dmzonaphthoquinone，DNQ)加入酚醛（N〇v〇iac)而形 成。此外’形成圖案化正型光阻層13〇的方法例如是先在 材料層120上形成-正型光阻層（未緣示），而形成正型 光阻層的方法例如是旋轉塗佈（spine⑽㈣）製程或是其 ”的製程 '然後，對於此正型光阻層依序進行曝光製 ^與顯影製程’以形成圖案化正型光阻層13〇。再來，於 完成顯影製程之後，通常會對於圖案化正型光阻層⑽進 行硬烤（hardbake)製程。 ，外，曝光製程所使用的切可以是紫外光或是其他 太:“源其中所使用的紫外光波長朗例如是介於200 奈米之間。另外，顯影製程所使用的顯影液為 ^驗性溶液或-無機驗性溶液，其中有機鹼性溶液例 (ΤΜΑίΌ$其他適#溶液，而無機 氫氧化鈉(Na0H)、氫氧化練0η) π茶照圖1Β ’以圖案化正型光阻層13〇為遮罩触刻 9 1246718 15568twf.doc/g 材料層120,以形成一圖案化材料層12 的材質不同，钱刻材料層12〇的方式 者=枓層120 Γ材料層⑶的方法例如是濕式 製程，其中乾式餘刻製程例如是適用於石夕、 =石夕（sl3N4)、金屬或導電㈣，而濕式_^^ 、用於介電材料、金屬材料或是透明導電材料:— 請參照圖1C，對於圖案化正型光阻層13 ί二改變圖案化正型光阻層l3G的分子結構，因丁 I再 ，曝光後的圖案化正型光阻層13G便能溶解於=再 4外，曝光製程所使用的光源例如是紫外光、X光立 大Γ?的紫外光波長範圍例如是二 圖料下荆Γ 換言之，此處所使用的光源與形成 同Γ 雜層130所使用的光源可以是相同或是不相 明苓妝圖1D，進行一顯影製程， =員影液例如是有機祕溶誠錢祕 = :性溶液例如是四甲基氯氧化靡則或其 f ’而热機驗性溶液例如是氫氧化納（NaOH)、氫气化 、夜iK〇H)或其他適當溶液。換言之，此處所使用的顯影 间=形成圖案化正型光阻層13〇所使用的顯影液可以是相 Ξί疋不相同。值得—提的是，形成圖案化正型光阻層130 ^吏用的顯影液亦可回收而用於移除圖案 130，以降低生產成本。 兀1且層 1246718 15568twf.doc/g 有下ίΐί述，本發明之形賴案倾㈣时法至少具 太择_她於¥知制植剝除液去除®案化光阻層， 於圖案化光阻層再次進行曝光製程，並使用顧影 ，圖案化光阻層，因此本發明所產生的廢水二 主 供。之本叙明所產生的廢水的 毋性較小，且處理成本也較低。 用的目較於W知技術，本發明移除圖案化光阻層所使 用的％間較少，且所耗用的水量也較少。 制。ί、本發明與現有的製程相容，因此無須增加額外的 衣程設備。 一四、相較於習知技術所使用之光阻剝除液（DMs〇) 會溶解有機材料（例如基板、導體、半導體及介電層等）， 由於本發明不使用光阻剝除液（DMSO)，因此上过、的門 題能夠獲得改善。 Ί 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之:罐 範圍當視後附之申請專利範圍所界定者為準。 又 【圖式簡單說明】 圖1Α至id繪示依照本發明較佳實施例之形成圖案 化材料層的方法的示意圖。 回一 【主要元件符號說明】 110 ·基板 11 1246718 15568twf.doc/g 120 :材料層 122 :圖案化材料層 130 ··圖案化正型光阻層1246718 15568twfdoc/g IX. Description of the invention: [Technical field of the invention] The present invention relates to a method for forming a patterned material layer of -4^ ψ it ^, ι, and particularly relates to [prior art] display Seeking to increase with the future, because «the full force of the relevant factors and right supply 'two' two" and cathode ray tube (Cathode Ray Tube) mouth ^ PS mouth quality and technical maturity, so long-term exclusive display 2 two recently due to The rise of the concept of green environmental protection is not conducive to the light, thin, short, small, beautiful and low power consumption of the energy consumption f and the large radiation generation. City % trend. Therefore, Thin Film Transistor Liquid Crystal Display (TFT-LCD), which has high enamel quality, space utilization efficiency, low power consumption, low emission, and the like, has gradually become the mainstream in the market. The thin film transistor liquid crystal display module (TFT_LCE) module is composed of a liquid crystal display panel (liquid crystal display PanQd) and a backlight module (back light module). Wherein, the liquid helium display panel is generally composed of a thin film transistor array substrate, a color filter substrate (such as a substrate), and a liquid crystal layer disposed between the two substrates. The backlight module is configured to provide a surface light source required for the liquid crystal display panel, so that the liquid crystal display module achieves the display effect. Whether it is a method of manufacturing a thin film transistor array substrate or a color filter, a large number of lithography processes and a lithography process and a development process are employed. Forming _, is a method of 曰6, and sequentially forming a metal layer and a photoresist layer on the substrate, and then sequentially performing an exposure process on the photoresist layer to form a patterned photoresist layer. Next, it is made of gold on the side of the metal layer, and (4) gold. County = resisting the stripping of the photoresist layer and revealing (4) the cased metal layer. It is worth noting that the components of the photoresist stripping solution include m〇noethanolamine (MEA) and dimethylsulf0xide (DMs〇). Since DMS is organic and has a considerable environmental impact, the cost of treating wastewater containing DMS is relatively high. In addition, the charm of DMS() is 18.5 degrees Celsius, so the container for storing DMSO must have a heat retention function. It is worth mentioning that an additional cleaning process is required to remove the patterned photoresist layer after removal of the patterned photoresist layer with DMSO to reduce contamination of the patterned metal layer by the photoresist stripping solution. In other words, the use of a photoresist stripping solution containing DMS does not only produce a large amount of waste water, but is more likely to cause contamination or damage to the patterned metal layer. SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a method of forming a layer of patterned material to mitigate the toxicity of process wastewater. Based on the above or other objects, the present invention provides a method of forming a patterned material layer comprising at least the following steps. A material layer is formed on a substrate, and then a patterned positive photoresist layer is formed on the material layer. The patterned first-type photoresist layer was patterned with a 1246718 15568 twf.doc/g mask-etching resist layer to perform a first-exposure process. Again, i rows of light to remove the patterned positive photoresist layer. Bu '~ clothing rights, the light =, the best example of the use of the above-mentioned first-exposure process, in addition, the purple - according to the hair of the Lai Jiaguan, the above U ^ development (four) - money secret reduction or Z surface alkali ff The solution is, for example, tetramethylhydrogenated oxygen (tet serving ethyl amm〇nium Ζ^ΜΑΗ). In addition, the trace (10) is such as sodium hydroxide (NaOH) or potassium pentoxide (koh). In accordance with a preferred embodiment of the present invention, the method of forming a patterned positive photoresist layer is, for example, forming a positive photoresist layer on a layer of material. Then, a "second exposure process" is performed on the positive photoresist layer. Next, a second development process is performed to form a patterned positive photoresist layer. The second exposure process described above may be the same as the light source used in the first exposure process. Further, the second development process described above may be the same as the type of developer used in the first development process. According to a preferred embodiment of the invention, the material layer may be an organic material layer or an inorganic material layer. Further, the material layer may also be a dielectric layer, a semiconductor layer or a conductor layer, wherein the conductor layer is, for example, a metal layer or a transparent conductor layer. Further, the material of the transparent conductor layer is, for example, indium tin oxide (indium tin oxide), indium oxide (IZO) or aiuminurn zinc oxide (AZO). 1246718 15568 twf.doc/g: "This: a preferred embodiment of the above-described patterned ultra-violet, DUV) photoresist and the like. The eep light " is used to remove the patterned photoresist layer again. Therefore, the wastewater produced by the present invention does not contain photoresist stripping solution (DMSO). In contrast, in comparison with the use of photoresist stripping solution (DMs〇), the waste of the present invention and the produced wastewater are also less toxic. In order to make the above and other objects, the ship and the gamma of the present invention, the preferred embodiment, and the accompanying drawings, the detailed description [embodiment] FIG. 1A S a ^ will show according to the present invention. A schematic diagram of a method of forming a layer of a preferred embodiment: a layer of material. Referring first to FIG. 1A, the method of: f f patterning a material layer includes at least the following steps. Privately, an 11G is provided, and the substrate UG is, for example, a substrate formed of a quartz substrate, a glass substrate, a plastic f substrate, a stone wafer or other materials. Then, a material layer 12 is formed on the base = 110, wherein the material layer 12 is, for example, a dielectric layer, a semiconductor layer, a conductor layer, an organic material layer or a benefit material layer. This, material layer! 20 may be a metal layer or a transparent material layer, wherein the material of the transparent material layer is, for example, indium tin oxide, indium zinc oxide, zinc aluminum oxide or other transparent conductive material. In other words, the present embodiment does not limit the type of the material layer 12A, and therefore the method of forming the material layer 120 is not the same as the type of the material layer 12〇, 246718 15568 twf.doc/g. For example, the method of forming the material layer 120 is, for example, an evaporation process, a sputtering process, a chemical vapor deposition process, a physical vapor deposition process, and a film formation process. And then 'forming a patterned positive photoresist layer on the material layer 120. The patterned positive photoresist layer 130 may be G]ine photoresist (436 nm), Hhle photoresist (365 nm), H_Hne depending on the exposure wavelength. Photoresist (405mn), DUV photoresist or other positive photoresist. For example, Gjine photoresist and photoresist can be formed by adding phenolic (N〇v〇iac) to dmzonaphthoquinone (DNQ). Further, the method of forming the patterned positive photoresist layer 13 is, for example, first forming a positive-type photoresist layer on the material layer 120 (the method is not shown), and the method of forming the positive-type photoresist layer is, for example, spin coating ( Spine (10) (four)) process or its "process" Then, the positive photoresist layer is sequentially exposed and developed to form a patterned positive photoresist layer 13 〇. After the development process is completed, A hardbake process is usually performed on the patterned positive photoresist layer (10). Alternatively, the exposure used in the exposure process may be ultraviolet light or other: "The wavelength of the ultraviolet light used in the source is, for example, Between 200 nm. In addition, the developing solution used in the developing process is a test solution or an inorganic test solution, wherein the organic alkaline solution is exemplified by an organic alkaline solution (inorganic sodium hydroxide (Na0H), and oxidized to 0 η) π Tea photo 1 Β 'The patterned positive photoresist layer 13 〇 is used as a mask to etch 9 1246718 15568 twf.doc / g material layer 120 to form a patterned material layer 12 of different materials, the material layer 12 Method: 枓 layer 120 Γ material layer (3) method is, for example, a wet process, wherein the dry process is applied to, for example, Shi Xi, = Shi Xi (sl3N4), metal or conductive (four), and wet _^^, For dielectric materials, metal materials or transparent conductive materials: - Please refer to FIG. 1C, for the patterned positive photoresist layer 13 to change the molecular structure of the patterned positive photoresist layer 13G, after the exposure, after exposure The patterned positive resist layer 13G can be dissolved in =4, and the light source used in the exposure process is, for example, ultraviolet light or X-ray. The wavelength range of the ultraviolet light is, for example, two images. The light source used herein and the light source used to form the homogenous layer 130 may be The same or not clear makeup Figure 1D, a development process, = member liquid solution, for example, organic secret solution, money secret =: sexual solution, such as tetramethyl oxychloride or its f 'and thermal test The solution is, for example, sodium hydroxide (NaOH), hydrogenated, night iK〇H) or other suitable solution. In other words, the developing chamber used herein = the developing solution used to form the patterned positive resist layer 13A may be different. It is worth mentioning that the developer for forming the patterned positive photoresist layer 130 can also be recycled for removing the pattern 130 to reduce the production cost.兀1 and layer 1246718 15568twf.doc/g have the following , ΐ , , , 本 本 本 本 本 本 本 本 本 本 本 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四The photoresist layer is again subjected to an exposure process, and the photoresist layer is patterned using the shadow, so that the wastewater generated by the present invention is mainly supplied. The waste water produced by the present invention is less entrenched and the treatment cost is lower. Compared with the prior art, the present invention removes the patterned photoresist layer by a small amount of % and consumes less water. system. The present invention is compatible with existing processes so that no additional equipment is required. 4. The photoresist stripping solution (DMs) used in the prior art dissolves organic materials (such as substrates, conductors, semiconductors, dielectric layers, etc.), since the present invention does not use photoresist stripping solution ( DMSO), so the subject of the past can be improved. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Inventive: The scope of the tank is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A to id are schematic views showing a method of forming a patterned material layer in accordance with a preferred embodiment of the present invention. Back to one [Description of main component symbols] 110 · Substrate 11 1246718 15568twf.doc/g 120 : Material layer 122 : Patterned material layer 130 · Patterned positive photoresist layer
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