CN208737213U - A kind of lithography mask version - Google Patents
A kind of lithography mask version Download PDFInfo
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- CN208737213U CN208737213U CN201821574276.0U CN201821574276U CN208737213U CN 208737213 U CN208737213 U CN 208737213U CN 201821574276 U CN201821574276 U CN 201821574276U CN 208737213 U CN208737213 U CN 208737213U
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- ultraviolet light
- lithography mask
- mask version
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Abstract
The utility model discloses a kind of lithography mask version, including transparent substrate, the transparent substrate includes first surface and second surface, and the first surface is formed with layers of chrome, and passivation layer is provided in the layers of chrome, and the second surface is formed with ultraviolet light antireflection layer.The lithography mask version size is big, ultrathin, has done photon crystal structure in plane of exposure, the anti-reflection property that can be improved ultraviolet light not only improves production capacity to reduce the time for exposure in a lithographic process, but also extends the service life of ultraviolet lamp part.In addition, being protected in the alumina passivation layer that photoresist contact surface uses high-densit high rigidity, the scratch resistance of reticle can be improved, to substantially increase the service life of reticle, reduce production cost.
Description
Technical field
The utility model relates to a kind of lithography mask versions, more particularly to a kind of lithography mask version of large-size ultra-thin type.
Background technique
Semiconductor lithography mask plate is always a weakness of our countries, and a lot of high-end mask plate products have dependence state
Outer import.The appearance of emerging event in, country has appreciated that the extremely urgent of entire semiconductor industry development, although Chinese
The development of semiconductor industry is started late, but by feat of huge market capacity and production group, China has become global maximum
Semiconductor country of consumption.Lithography mask version is a more crucial link of entire semiconductor industry, as country's increasing is half-and-half led
The investment of body industry, according to the prediction data of the authoritative institutions such as CSIA, sadie think tank, SEMI, it is seen that in the coming years, semiconductor
Industry will keep the growth of 20%-30%.And greatly developing with semiconductor industry, the demand of semiconductor mask version are also quick-fried therewith
The growth of hairdo.
With the development of semiconductor technology, the size of semiconductor crystal wafer manufacture is also increasing, the lithography mask version needed
Size is also increasing, and the requirement to product is also higher and higher.In existing technical field of semiconductor lithography, due to mask plate
Reusability number it is very ordinary, photoresist contact surface usually not passes through the anti-scratch processing of special surface, surface scratching
Probability is just bigger, and the service life of mask plate will greatly shorten.It is anti-due to mask plate in addition, in existing photoetching process
It penetrates and on the one hand causes the uneven of ultraviolet light optical path, on the other hand cause the utilization rate of ultraviolet light not high, secondly, substrate is too
Thickness causes ultraviolet light optical path too long, is unfavorable for penetrating for ultraviolet light, and the utilization rate that equally will cause ultraviolet light is not high.This one
The problem of series annoyings always the further development of entire industry.
Utility model content
For above-mentioned technical problem of the existing technology, the utility model aim is: a kind of lithography mask version is provided,
The lithography mask version size is big, ultrathin, has done photon crystal structure in plane of exposure, can be improved the anti-reflection property of ultraviolet light, from
And the time for exposure is reduced in a lithographic process, production capacity is not only improved, but also extend the service life of ultraviolet lamp part.Separately
Outside, it is protected in the alumina passivation layer that photoresist contact surface uses high-densit high rigidity, the damage resistant of reticle can be improved
Property, to substantially increase the service life of reticle, reduce production cost.
The technical solution of the utility model is:
A kind of lithography mask version, including transparent substrate, the transparent substrate include first surface and second surface, and described
One surface is formed with layers of chrome, and passivation layer is provided in the layers of chrome, and the second surface is formed with ultraviolet light antireflection layer.
In preferred technical solution, the transparent substrate with a thickness of 50-200um, the layers of chrome with a thickness of 100-
200nm。
In preferred technical solution, the transparent substrate is transparent sapphire monocrystal material.
In preferred technical solution, the odd-multiple of the wavelength of the λ with a thickness of incident uv/4 of the passivation layer.
In preferred technical solution, the odd-multiple of the wavelength of the λ with a thickness of incident uv/4 of the ultraviolet light antireflection layer.
In preferred technical solution, the ultraviolet light antireflection layer is magnesium fluoride.
In preferred technical solution, the anti-reflection layer surface of ultraviolet light is provided with photonic crystal structure layer.
Compared with prior art, the utility model has the advantages that:
Using sapphire single-crystal material as substrate, large-size ultra-thin type substrate is prepared, ultrathin type has shortening ultraviolet
The advantage of light optical path improves the penetration capacity of ultraviolet light.Secondly photon crystal structure has been done in plane of exposure, has can be improved ultraviolet light
Anti-reflection property not only improve production capacity to reduce the time for exposure in a lithographic process, but also extend making for ultraviolet lamp part
With the service life, while reducing the reflection of ultraviolet light, there is certain help to the optical path uniformity of incident uv.In addition,
The alumina passivation layer that photoresist contact surface or approaching face use high-densit high rigidity is protected, and the resistance to of reticle can be improved
Scratch resistant reduces production cost to substantially increase the service life of reticle.
Detailed description of the invention
The utility model is further described with reference to the accompanying drawings and embodiments:
Fig. 1 is the utility model transparent substrate structural schematic diagram；
Fig. 2 is the structural schematic diagram of the utility model lithography mask version；
Fig. 3 is the flow chart of the preparation method of the utility model lithography mask version.
Specific embodiment
To make the objectives, technical solutions and advantages of the present invention clearer, With reference to embodiment
And referring to attached drawing, the utility model is further described.It should be understood that these descriptions are merely illustrative, and do not really want
Limit the scope of the utility model.In addition, in the following description, descriptions of well-known structures and technologies are omitted, to avoid not
Necessarily obscure the concept of the utility model.
Embodiment:
As shown in Figure 1, 2, a kind of lithography mask version, including transparent substrate 1, transparent substrate 1 can use suprasil material
One of material, transparent soda glass material, transparent sapphire monocrystal material, preferential selection transparent sapphire monocrystal material,
The thickness of transparent substrate 1 has the advantage for shortening ultraviolet light optical path in 50-200um thickness, ultrathin type, and that improves ultraviolet light penetrates energy
Power.
It is formed with layers of chrome 2 in the first surface (upper surface) of transparent substrate 1, the first surface of transparent substrate 1 is photoresist
Contact surface or approaching face.For the thickness of layers of chrome 2 between 100-200nm, layers of chrome 2 serves as the effect of mask layer；Layers of chrome 2 is according to exposure mask
The difference of demand, is provided with different graphical, and layers of chrome 2 can graphically be led by method that laser direct-writing etches or partly
Is made in the method that photoetching development corrodes in body technology
It is provided with passivation layer 3 in layers of chrome 2, the odd-multiple of the wavelength of the λ with a thickness of incident uv/4 of passivation layer 3, this
Thickness is more advantageous to the reflection for avoiding ultraviolet light, is formed with ultraviolet light antireflection layer 4, ultraviolet light in the second surface of transparent substrate 1
Magnesium fluoride or silica material of the antireflection layer 4 for low-refraction, preferential selection magnesium fluoride material, the thickness of antireflection layer 4 are same
Sample is the odd-multiple of the wavelength of λ/4 of incident uv, this thickness is more advantageous to the reflection for avoiding ultraviolet light.
It is antireflective in order to play the role of antireflection layer preferably, other than selecting the magnesium fluoride material of low-refraction, also
Photon crystal structure is done on the surface of antireflection layer, form photonic crystal structure layer 5, there is antireflective effect to ultraviolet light.
The preparation method of above-mentioned lithography mask version is as shown in figure 3, specifically comprise the following steps:
Sputtering or electron beam are utilized at the upper surface of transparent sapphire substrate 1 (i.e. photoresist contact surface or approaching face) first
One of evaporation or thermal evaporation process carry out plated film, make one layer of layers of chrome, the thickness of layers of chrome is between 100-200nm, layers of chrome
Serve as the effect of mask layer.Further according to the difference of exposure mask demand, layers of chrome is arranged to different graphical, formation pattern masks
Layers of chrome 2, image conversion exposure mask layers of chrome 2 can graphically be shown by photoetching in the method or semiconductor technology of laser direct-writing etching
The method of shadow corrosion is made.
Pattern mask layers of chrome 2 is protected by passivation layer, and passivation layer selection material is finer and close, hardness is relatively high
Transparent Indium aluminum material, alumina passivation layer 3 have the function of anti-scratch, can be improved mask plate photoresist contact surface or close
The scratch resistance in face, the odd-multiple of the wavelength of the λ with a thickness of incident uv/4 of alumina passivation layer 3, this thickness are more advantageous
In the reflection for avoiding ultraviolet light, be conducive to the anti-reflection of ultraviolet light, the method system that alumina passivation layer 3 is combined by physical chemistry
, one layer of aluminium film first is done with the method for sputtering or the physics such as electron beam evaporation or thermal evaporation, is then aoxidized by chemical anode
Technique be made alumina passivation layer 3.
Next in the lower surface of transparent sapphire substrate 1 (i.e. ultraviolet photoetching face) using in sputtering or electron beam evaporation
A kind of carry out plated film, make ultraviolet light antireflection layer 4, ultraviolet light antireflection layer 4 be low-refraction magnesium fluoride or silica material
Matter, preferential selection magnesium fluoride material, the thickness of magnesium fluoride antireflection layer 4 are similarly the odd-multiple of the wavelength of the λ of incident uv/4,
This thickness is more advantageous to the reflection for avoiding ultraviolet light.
It is antireflective in order to play the role of magnesium fluoride antireflection layer 4 preferably, the magnesium fluoride material in addition to selecting low-refraction
In addition, also photonic crystal structure layer 5 is done on the surface of antireflection layer, there is antireflective effect to ultraviolet light.It is final to be made required
The anti-reflection mar-proof lithography mask version of property of large-size ultra-thin type.
The lithography mask version as made from the utility model method, due to using sapphire single-crystal material as substrate, because
Sapphire hardness such as is unlikely to deform greatly at the characteristics, it is easier to prepare large-size ultra-thin type substrate, ultrathin type have shorten it is ultraviolet
The advantage of light optical path improves the penetration capacity of ultraviolet light.Secondly photon crystal structure has been done in plane of exposure, has can be improved ultraviolet light
Anti-reflection property not only improve production capacity to reduce the time for exposure in a lithographic process, but also extend making for ultraviolet lamp part
With the service life, while reducing the reflection of ultraviolet light, there is certain help to the optical path uniformity of incident uv.In addition,
The alumina passivation layer that photoresist contact surface or approaching face use high-densit high rigidity is protected, and the resistance to of reticle can be improved
Scratch resistant reduces production cost to substantially increase the service life of reticle.This method simple process is suitble to big rule
Mould batch production, can be widely applied to semiconductor chip photoetching process manufacture field and other optical mask fields.
It should be understood that the above-mentioned specific embodiment of the utility model is used only for exemplary illustration or explains this reality
With novel principle, without constituting limitations of the present invention.Therefore, in the spirit and scope without departing from the utility model
In the case of any modification, equivalent substitution, improvement and etc. done, should be included within the scope of protection of this utility model.In addition,
The appended claims for the utility model are intended to cover to fall into attached claim scope and boundary or this range and boundary
Whole change and modification in equivalent form.
Claims (7)
1. a kind of lithography mask version, including transparent substrate, the transparent substrate includes first surface and second surface, and feature exists
In the first surface is formed with layers of chrome, passivation layer is provided in the layers of chrome, it is anti-reflection that the second surface is formed with ultraviolet light
Layer.
2. lithography mask version according to claim 1, which is characterized in that the transparent substrate with a thickness of 50-200um,
The layers of chrome with a thickness of 100-200nm.
3. lithography mask version according to claim 1, which is characterized in that the transparent substrate is transparent sapphire monocrystalline material
Material.
4. lithography mask version according to claim 1, which is characterized in that the passivation layer with a thickness of incident uv
The odd-multiple of the wavelength of λ/4.
5. lithography mask version according to claim 1, which is characterized in that the ultraviolet light antireflection layer with a thickness of incident purple
The odd-multiple of the wavelength of the λ of outer light/4.
6. lithography mask version according to claim 1, which is characterized in that the ultraviolet light antireflection layer is magnesium fluoride.
7. lithography mask version according to claim 1, which is characterized in that the anti-reflection layer surface of ultraviolet light is provided with photon
Crystal structure layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821574276.0U CN208737213U (en) | 2018-09-26 | 2018-09-26 | A kind of lithography mask version |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821574276.0U CN208737213U (en) | 2018-09-26 | 2018-09-26 | A kind of lithography mask version |
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| CN208737213U true CN208737213U (en) | 2019-04-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109324473A (en) * | 2018-09-26 | 2019-02-12 | 苏州瑞而美光电科技有限公司 | A kind of lithography mask version and preparation method thereof |
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2018
- 2018-09-26 CN CN201821574276.0U patent/CN208737213U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109324473A (en) * | 2018-09-26 | 2019-02-12 | 苏州瑞而美光电科技有限公司 | A kind of lithography mask version and preparation method thereof |
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