CN204903941U - Ultraviolet photoetching machine exposure system is with accurate deielectric -coating speculum - Google Patents
Ultraviolet photoetching machine exposure system is with accurate deielectric -coating speculum Download PDFInfo
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- CN204903941U CN204903941U CN201520656862.XU CN201520656862U CN204903941U CN 204903941 U CN204903941 U CN 204903941U CN 201520656862 U CN201520656862 U CN 201520656862U CN 204903941 U CN204903941 U CN 204903941U
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- coating materials
- deielectric
- exposure system
- accurate
- materials layer
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Abstract
The utility model belongs to a semiconductor IC -manufacture field, in particular to ultraviolet photoetching machine exposure system is with accurate deielectric -coating speculum, including aspheric surface substrate (1) and alternative superpose multilayer membrane aperiodic, alternative superpose multilayer membrane aperiodic deposit in the internal surface of aspheric surface substrate (1), superpose multilayer membrane aperiodic includes high refractive index coating materials layer and low refracting index membrane material layer in turn, high refractive index coating materials layer and low refracting index membrane material layer are according to following law deposit in the internal surface of aspheric surface substrate (1): H1L1... H n -1Ln -1Hn, wherein, H is high refractive index coating materials layer, L is low refracting index coating materials layer, N is the sedimentary number of piles. The utility model discloses the absorption loss is little, and membranous layer surface mechanical strength is high, and the routine maintenance is difficult for appearing the mar when clean, and optical characteristic is stable, and the life cycle is long, low cost.
Description
Technical field
The utility model belongs to SIC (semiconductor integrated circuit) and manufactures field, the particularly accurate deielectric-coating catoptron of a kind of ultraviolet photolithographic machine exposure system.
Background technology
Photoetching is a kind of lithography technology, is a crucial technique in SIC (semiconductor integrated circuit) manufacturing process, in simple terms, it be imaging with etch the product combined.The object of photoetching is exactly on the surface of object to be processed, to carve with mask on all four figure, and it is photosensitive to be equivalent in print in exposure in a photolithographic process, is a vital procedure.Current uv-exposure can meet the requirement of most of large scale integrated circuit to resolution, and the equipment simultaneously used due to uv-exposure and technology are compared simply, and easy to operate, efficiency is high, and cost is low.Therefore ultraviolet photolithographic machine is widely used.
Ultraviolet source catoptron is one of exposure system core part, and its major function focuses on ultraviolet light, raising light source utilization rate, and then the light intensity uniformity of lifting exposure system, resolution and exposure efficiency.The ultraviolet source catoptron of current exposure system based on metallic reflection rete, i.e. Al film.The key property of Al film has: reflection spectrum curve is smooth, reflection bandwidth, polarization effect are little relative with process for plating simple.But it is slightly large that shortcoming is absorption loss, and film surface physical strength is not high, easily occurs cut when routine use is safeguarded clean, uses non-periodic relatively short, add use cost.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of ultraviolet photolithographic machine exposure system accurate multilayer dielectric film catoptron, with alternative metals Al-flim reflector, its absorption loss is little, film surface physical strength is high, not easily cut is there is when daily servicing cleans, optical characteristics is stablized, and life cycle is long, with low cost.
To achieve these goals, the utility model is adopted is realize like this.
The accurate deielectric-coating catoptron of a kind of ultraviolet photolithographic machine exposure system, it comprises aspheric base sheet and replaces stacked multilayer film non-periodic; Described alternately stacked multilayer film non-periodic is deposited on the inside surface of aspheric base sheet.
As a kind of preferred version, alternately stacked multilayer film non-periodic described in the utility model comprises high index of refraction Coating Materials layer and low-refraction membrane layers; Described high index of refraction Coating Materials layer and low-refraction membrane layers are deposited on the inside surface of aspheric base sheet by following rule: H
1/ L
1/ ... H
n-1/ L
n-1/ H
n; Wherein, H is high index of refraction Coating Materials layer; L is the low refractive index film bed of material; N is the number of plies of deposition.
Further, the number of plies n=29 of deposition described in the utility model.
Compared with prior art, the utility model has following features.
1, select the weak absorbing dielectric thin-film material described in two kinds, ultraviolet reflectance mirror multilayer film of the present utility model, compared to Al film, has following advantage: media coating packed density is high, and rete is fine and close, and optical characteristics is stablized, and is coated with reproducible; The absorption of deielectric-coating is little of negligible degree, and therefore this multilayer film can obtain higher reflectivity and absorption loss little as far as possible; Deielectric-coating has good physical strength and chemical stability, rete and mirror substrate, has good tack between rete and rete.Therefore multilayer dielectric film has excellent environmental suitability, and then extends catoptron long service life, simultaneously daily servicing clean convenient.
2, multilayer dielectric film Film Design, reach ultraviolet light wave band high reverse--bias, the object of unwanted visible and infrared light high transmission in lithographic exposure systems, wherein ultraviolet light wave band luminance factor Al film improves about 5%, and then improves the luminous flux of exposure system projection light.Ultraviolet light wave band realizes the design of broadband high-reflection rate simultaneously, ensures that all ultraviolet operation wavelengths are at catoptron inside surface total reflectivity.
Accompanying drawing explanation
Below in conjunction with specification drawings and specific embodiments, the utility model is described in further detail.Protection domain of the present utility model is not only confined to the statement of following content.
Fig. 1 is the utility model one-piece construction schematic diagram.
Fig. 2 is the utility model film thickness uniformity correction schematic diagram.
Fig. 3 is the utility model ultraviolet multilayer dielectric film reflectance test curve of spectrum.
Embodiment
As shown in Figure 1, the accurate deielectric-coating catoptron of ultraviolet photolithographic machine exposure system, comprises aspheric base sheet 1 and replaces stacked multilayer film non-periodic; Described alternately stacked multilayer film non-periodic is deposited on the inside surface of aspheric base sheet 1.
Alternately stacked multilayer film non-periodic described in the utility model comprises high index of refraction Coating Materials layer and low-refraction membrane layers; Described high index of refraction Coating Materials layer and low-refraction membrane layers are deposited on the inside surface of aspheric base sheet 1 by following rule: H
1/ L
1/ ... H
n-1/ L
n-1/ H
n; Wherein, H is high index of refraction Coating Materials layer; L is the low refractive index film bed of material; N is the number of plies of deposition; The number of plies n=29 of deposition described in the utility model.
In the utility model H/L non-periodic multilayer, high index of refraction Coating Materials H is Ta
2o
5, low-refraction Coating Materials L is SiO
2, be all weak absorbing dielectric thin-film material.The utility model is at deposition on substrate Ta
2o
5/ SiO
2non-periodic multilayer adopts e type electron gun evaporation to be coated with.
The accurate multilayer dielectric film catoptron of the ultraviolet photolithographic machine exposure system that the utility model prepares includes aspheric base sheet 1 and the alternating deposit T at aspheric base sheet 1 inside surface
a2o
5rete and SiO
2rete, wherein Ta
2o
5layer is odd-level, SiO
2layer is even level.
Shown in Figure 2,2 is planetary rotation frame; 3 is modifying mask; 4 is ion gun; 5 is electron gun.
The each thicknesses of layers data of table 1 ultraviolet multilayer dielectric film.
Be understandable that, for the person of ordinary skill of the art, other various corresponding change and distortion can be made according to technical conceive of the present utility model, and all these change the protection domain that all should belong to the utility model claim with distortion.
Claims (3)
1. the accurate deielectric-coating catoptron of ultraviolet photolithographic machine exposure system, is characterized in that, comprises aspheric base sheet (1) and replaces stacked multilayer film non-periodic; Described alternately stacked multilayer film non-periodic is deposited on the inside surface of aspheric base sheet (1).
2. the accurate deielectric-coating catoptron of ultraviolet photolithographic machine exposure system according to claim 1, is characterized in that: described alternately stacked multilayer film non-periodic comprises high index of refraction Coating Materials layer and low-refraction membrane layers; Described high index of refraction Coating Materials layer and low-refraction membrane layers are deposited on the inside surface of aspheric base sheet (1) by following rule: H
1/ L
1/ ... H
n-1/ L
n-1/ H
n; Wherein, H is high index of refraction Coating Materials layer; L is the low refractive index film bed of material; N is the number of plies of deposition.
3. the accurate deielectric-coating catoptron of ultraviolet photolithographic machine exposure system according to claim 2, is characterized in that: the number of plies n=29 of described deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520656862.XU CN204903941U (en) | 2015-08-28 | 2015-08-28 | Ultraviolet photoetching machine exposure system is with accurate deielectric -coating speculum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520656862.XU CN204903941U (en) | 2015-08-28 | 2015-08-28 | Ultraviolet photoetching machine exposure system is with accurate deielectric -coating speculum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204903941U true CN204903941U (en) | 2015-12-23 |
Family
ID=54926104
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520656862.XU Expired - Fee Related CN204903941U (en) | 2015-08-28 | 2015-08-28 | Ultraviolet photoetching machine exposure system is with accurate deielectric -coating speculum |
Country Status (1)
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| CN (1) | CN204903941U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105093852A (en) * | 2015-08-28 | 2015-11-25 | 沈阳仪表科学研究院有限公司 | Precise dielectric film reflector for exposure system of ultraviolet photoetching machine and plating method of precise dielectric film reflector |
| CN108496116A (en) * | 2016-01-21 | 2018-09-04 | 卡尔蔡司Smt有限责任公司 | The optical system of reflection type optical element and EUV lithography |
| CN114428091A (en) * | 2021-12-29 | 2022-05-03 | 苏州闻道电子科技有限公司 | Ni/Ti aperiodic multilayer film, preparation method and application thereof, and Ni/Ti aperiodic multilayer film neutron super-reflector |
-
2015
- 2015-08-28 CN CN201520656862.XU patent/CN204903941U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105093852A (en) * | 2015-08-28 | 2015-11-25 | 沈阳仪表科学研究院有限公司 | Precise dielectric film reflector for exposure system of ultraviolet photoetching machine and plating method of precise dielectric film reflector |
| CN108496116A (en) * | 2016-01-21 | 2018-09-04 | 卡尔蔡司Smt有限责任公司 | The optical system of reflection type optical element and EUV lithography |
| CN108496116B (en) * | 2016-01-21 | 2020-09-29 | 卡尔蔡司Smt有限责任公司 | Reflective optical element and optical system for EUV lithography |
| US11073766B2 (en) | 2016-01-21 | 2021-07-27 | Carl Zeiss Smt Gmbh | Reflective optical element and optical system for EUV lithography having proportions of substances which differ across a surface |
| CN114428091A (en) * | 2021-12-29 | 2022-05-03 | 苏州闻道电子科技有限公司 | Ni/Ti aperiodic multilayer film, preparation method and application thereof, and Ni/Ti aperiodic multilayer film neutron super-reflector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151223 Termination date: 20170828 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |