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Priority to TW94114349ApriorityCriticalpatent/TWI246718B/en
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Publication of TW200639921ApublicationCriticalpatent/TW200639921A/en
Photosensitive Polymer And Photoresist Processing
(AREA)
Abstract
A method for forming a patterned material layer is provided. First, a material layer is formed on a substrate, and then a patterned positive photoresist layer is formed thereon. Next, the material layer is etched by using the patterned positive photoresist layer as a mask. Afterward, a developing process is performed to remove the patterned positive photoresist layer. As mentioned above, the cost can be reduced.
TW94114349A2005-05-042005-05-04Method for forming patterned material layer
TWI246718B
(en)