TWI354368B - Interconnect structure with aluminum core - Google Patents

Interconnect structure with aluminum core Download PDF

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Publication number
TWI354368B
TWI354368B TW094115682A TW94115682A TWI354368B TW I354368 B TWI354368 B TW I354368B TW 094115682 A TW094115682 A TW 094115682A TW 94115682 A TW94115682 A TW 94115682A TW I354368 B TWI354368 B TW I354368B
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TW
Taiwan
Prior art keywords
metal layer
layer
integrated circuit
power
planar
Prior art date
Application number
TW094115682A
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English (en)
Chinese (zh)
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TW200603386A (en
Inventor
Sehat Sutardja
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Marvell World Trade Ltd
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Publication of TW200603386A publication Critical patent/TW200603386A/zh
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Publication of TWI354368B publication Critical patent/TWI354368B/zh

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    • H—ELECTRICITY
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    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
TW094115682A 2004-01-26 2005-01-12 Interconnect structure with aluminum core TWI354368B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/765,474 US7265448B2 (en) 2004-01-26 2004-01-26 Interconnect structure for power transistors

Publications (2)

Publication Number Publication Date
TW200603386A TW200603386A (en) 2006-01-16
TWI354368B true TWI354368B (en) 2011-12-11

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TW094115682A TWI354368B (en) 2004-01-26 2005-01-12 Interconnect structure with aluminum core
TW094115698A TWI354369B (en) 2004-01-26 2005-01-12 Interconnect structure with wings
TW094100907A TWI354367B (en) 2004-01-26 2005-01-12 Integrated circuits and interconnect structure for

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TW094115698A TWI354369B (en) 2004-01-26 2005-01-12 Interconnect structure with wings
TW094100907A TWI354367B (en) 2004-01-26 2005-01-12 Integrated circuits and interconnect structure for

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US (2) US7265448B2 (enExample)
EP (3) EP1727199A3 (enExample)
JP (3) JP4596925B2 (enExample)
CN (3) CN1805137A (enExample)
TW (3) TWI354368B (enExample)

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US7960833B2 (en) * 2003-10-22 2011-06-14 Marvell World Trade Ltd. Integrated circuits and interconnect structure for integrated circuits
US7414275B2 (en) * 2005-06-24 2008-08-19 International Business Machines Corporation Multi-level interconnections for an integrated circuit chip
JP4424331B2 (ja) * 2005-08-01 2010-03-03 セイコーエプソン株式会社 静電アクチュエータ、液滴吐出ヘッド、液滴吐出ヘッドの駆動方法及び静電アクチュエータの製造方法
EP1941058A4 (en) * 2005-10-27 2010-01-20 Rosetta Inpharmatics Llc NUCLEIC ACID REINFORCEMENT FROM NON-INCIDENTIAL PRIMERS
US8786072B2 (en) * 2007-02-27 2014-07-22 International Rectifier Corporation Semiconductor package
US9147644B2 (en) 2008-02-26 2015-09-29 International Rectifier Corporation Semiconductor device and passive component integration in a semiconductor package
CN101652858A (zh) * 2007-03-15 2010-02-17 马维尔国际贸易有限公司 集成电路和集成电路的互连结构
KR100851065B1 (ko) * 2007-04-30 2008-08-12 삼성전기주식회사 전자기 밴드갭 구조물 및 인쇄회로기판
JP2009111110A (ja) * 2007-10-30 2009-05-21 Nec Electronics Corp 半導体装置
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