TWI316286B - Fabrication method of semiconductor integrated circuit device - Google Patents

Fabrication method of semiconductor integrated circuit device

Info

Publication number
TWI316286B
TWI316286B TW092129018A TW92129018A TWI316286B TW I316286 B TWI316286 B TW I316286B TW 092129018 A TW092129018 A TW 092129018A TW 92129018 A TW92129018 A TW 92129018A TW I316286 B TWI316286 B TW I316286B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
fabrication method
fabrication
Prior art date
Application number
TW092129018A
Other languages
English (en)
Other versions
TW200415754A (en
Inventor
Yoshiyuki Abe
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200415754A publication Critical patent/TW200415754A/zh
Application granted granted Critical
Publication of TWI316286B publication Critical patent/TWI316286B/zh

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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0495—5th Group
    • H01L2924/04953—TaN
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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TW092129018A 2002-10-25 2003-10-20 Fabrication method of semiconductor integrated circuit device TWI316286B (en)

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Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8049947B2 (en) 2002-06-10 2011-11-01 E Ink Corporation Components and methods for use in electro-optic displays
JP4471563B2 (ja) * 2002-10-25 2010-06-02 株式会社ルネサステクノロジ 半導体装置の製造方法
KR100484088B1 (ko) * 2002-12-06 2005-04-20 삼성전자주식회사 멀티 칩 패키지용 다이 어태치와 경화 인라인 장치
JP4860113B2 (ja) * 2003-12-26 2012-01-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
KR100538158B1 (ko) * 2004-01-09 2005-12-22 삼성전자주식회사 웨이퍼 레벨 적층 칩 접착 방법
US7306971B2 (en) * 2004-03-02 2007-12-11 Chippac Inc. Semiconductor chip packaging method with individually placed film adhesive pieces
US7190058B2 (en) * 2004-04-01 2007-03-13 Chippac, Inc. Spacer die structure and method for attaching
JP2005303218A (ja) * 2004-04-16 2005-10-27 Renesas Technology Corp 半導体装置およびその製造方法
TW200539357A (en) * 2004-04-28 2005-12-01 Lintec Corp Adhering apparatus and adhering method
KR100539271B1 (ko) * 2004-07-26 2005-12-27 삼성전자주식회사 휨 방지 재질을 사용하는 반도체 칩의 다이 접착 방법
TWI234234B (en) * 2004-08-09 2005-06-11 Touch Micro System Tech Method of segmenting a wafer
JP2006150500A (ja) * 2004-11-29 2006-06-15 Elpida Memory Inc レジンボンド砥石およびそれを用いた半導体チップの製造方法
US7713846B2 (en) * 2004-12-29 2010-05-11 Siliconware Precision Industries Co., Ltd. Process applied to semiconductor
TWI251924B (en) * 2004-12-29 2006-03-21 Siliconware Precision Industries Co Ltd A process applied to semiconductor
US8124455B2 (en) * 2005-04-02 2012-02-28 Stats Chippac Ltd. Wafer strength reinforcement system for ultra thin wafer thinning
JP2006310846A (ja) * 2005-04-28 2006-11-09 Ls Cable Ltd 半導体用ダイシングダイ接着フィルム
JP5201805B2 (ja) * 2005-05-31 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2007095780A (ja) * 2005-09-27 2007-04-12 Oki Electric Ind Co Ltd 半導体装置製造用治具と半導体装置製造方法
JP2007134390A (ja) * 2005-11-08 2007-05-31 Disco Abrasive Syst Ltd ウエーハの加工方法
TWI269380B (en) * 2005-11-14 2006-12-21 Advanced Semiconductor Eng Laser marking method for wafer
US20070144668A1 (en) * 2005-12-27 2007-06-28 Kabushiki Kaisha Toshiba Double-side mounting apparatus, and method of manufacturing electrical apparatus
US8420505B2 (en) * 2006-03-25 2013-04-16 International Rectifier Corporation Process for manufacture of thin wafer
JP2007266557A (ja) * 2006-03-30 2007-10-11 Renesas Technology Corp 半導体装置の製造方法
JP4698519B2 (ja) * 2006-07-31 2011-06-08 日東電工株式会社 半導体ウエハマウント装置
JP4953738B2 (ja) * 2006-09-07 2012-06-13 日東電工株式会社 粘着テープ切断方法およびこれを用いた粘着テープ貼付け装置
JP2008066653A (ja) * 2006-09-11 2008-03-21 Tokyo Seimitsu Co Ltd ウェーハ処理方法およびウェーハ処理装置
CN101553751B (zh) * 2006-09-20 2012-04-11 伊英克公司 用在电光显示器中的部件和方法
JP2008078367A (ja) 2006-09-21 2008-04-03 Renesas Technology Corp 半導体装置
TWI379409B (en) 2006-09-29 2012-12-11 Semiconductor Energy Lab Method for manufacturing semiconductor device
US8017502B2 (en) * 2006-12-22 2011-09-13 Stats Chippac Ltd. Wafer system with partial cuts
CN101689513B (zh) * 2007-02-09 2011-07-13 Lg伊诺特有限公司 多功能芯片贴膜以及使用此贴膜的半导体封装方法
JP5428169B2 (ja) * 2007-03-05 2014-02-26 日立化成株式会社 半導体装置の製造方法
JP5111938B2 (ja) * 2007-05-25 2013-01-09 日東電工株式会社 半導体ウエハの保持方法
US7935780B2 (en) * 2007-06-25 2011-05-03 Brewer Science Inc. High-temperature spin-on temporary bonding compositions
US11238329B2 (en) 2007-12-24 2022-02-01 Dynamics Inc. Payment cards and devices with gift card, global integration, and magnetic stripe reader communication functionality
US8273603B2 (en) * 2008-04-04 2012-09-25 The Charles Stark Draper Laboratory, Inc. Interposers, electronic modules, and methods for forming the same
US7960247B2 (en) * 2008-04-04 2011-06-14 The Charles Stark Draper Laboratory, Inc. Die thinning processes and structures
US8017451B2 (en) 2008-04-04 2011-09-13 The Charles Stark Draper Laboratory, Inc. Electronic modules and methods for forming the same
JP5343261B2 (ja) * 2008-11-18 2013-11-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101019893B1 (ko) * 2008-12-23 2011-03-04 주식회사 하이닉스반도체 플로팅 바디 효과를 이용한 자기저항 메모리셀, 이를 포함하는 메모리 소자 및 그 동작 방법
JP5456441B2 (ja) * 2009-01-30 2014-03-26 日東電工株式会社 ダイシングテープ一体型ウエハ裏面保護フィルム
JP5805367B2 (ja) * 2009-01-30 2015-11-04 日東電工株式会社 ダイシングテープ一体型ウエハ裏面保護フィルム
JP5456440B2 (ja) * 2009-01-30 2014-03-26 日東電工株式会社 ダイシングテープ一体型ウエハ裏面保護フィルム
US7985662B2 (en) * 2009-04-14 2011-07-26 Powertech Technology Inc. Method for manufacturing dies formed with a dielectric layer
JP2010272682A (ja) * 2009-05-21 2010-12-02 Denki Kagaku Kogyo Kk 電子部品の製造装置及びその製造方法
CN101733703B (zh) * 2009-12-23 2011-07-27 中国电子科技集团公司第五十五研究所 一种减小微悬浮结构在化学机械减薄抛光中变形工艺方法
JP5401301B2 (ja) * 2009-12-28 2014-01-29 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体装置
JP2012069919A (ja) * 2010-08-25 2012-04-05 Toshiba Corp 半導体装置の製造方法
JP2012195388A (ja) * 2011-03-15 2012-10-11 Toshiba Corp 半導体装置の製造方法及び半導体装置
US8535983B2 (en) * 2011-06-02 2013-09-17 Infineon Technologies Ag Method of manufacturing a semiconductor device
CH705229B1 (de) * 2011-07-08 2015-06-15 Esec Ag Verfahren und Vorrichtung für die Montage von Halbleiterchips.
KR101909633B1 (ko) 2011-12-30 2018-12-19 삼성전자 주식회사 레이저 스크라이빙을 이용한 발광소자 칩 웨이퍼의 절단 방법
JP5981154B2 (ja) * 2012-02-02 2016-08-31 三菱電機株式会社 半導体装置の製造方法
WO2013126349A1 (en) * 2012-02-20 2013-08-29 Dynamics Inc. Systems and methods for flexible components, flexible cards, multi-layer boards, multiple sensor detectors, non-time smearing detection mechanisms and electromagnetic field generators for powered cards and devices
US9916992B2 (en) 2012-02-20 2018-03-13 Dynamics Inc. Systems and methods for flexible components for powered cards and devices
US9064195B2 (en) 2012-06-29 2015-06-23 Dynamics Inc. Multiple layer card circuit boards
US9010647B2 (en) 2012-10-29 2015-04-21 Dynamics Inc. Multiple sensor detector systems and detection methods of magnetic cards and devices
US10949627B2 (en) 2012-12-20 2021-03-16 Dynamics Inc. Systems and methods for non-time smearing detection mechanisms for magnetic cards and devices
US8809166B2 (en) * 2012-12-20 2014-08-19 Nxp B.V. High die strength semiconductor wafer processing method and system
CN109273622B (zh) 2013-08-06 2021-03-12 株式会社半导体能源研究所 剥离方法
TWI794098B (zh) 2013-09-06 2023-02-21 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
US9937698B2 (en) 2013-11-06 2018-04-10 Semiconductor Energy Laboratory Co., Ltd. Peeling method and light-emitting device
CN103560106B (zh) * 2013-11-22 2017-01-18 上海新傲科技股份有限公司 低翘曲度的半导体衬底的制备方法
JP2015177040A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体製造装置
US9799829B2 (en) 2014-07-25 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Separation method, light-emitting device, module, and electronic device
DE102014111744B4 (de) * 2014-08-18 2022-01-05 Infineon Technologies Ag Baugruppe zum handhaben eines halbleiterchips und verfahren zum handhaben eines halbleiterchips
JP6626254B2 (ja) * 2015-02-03 2019-12-25 株式会社テセック 半導体デバイス測定方法
EP3164890B1 (en) * 2015-04-24 2017-11-01 ABB Schweiz AG Method for manufacturing a power semiconductor device with thick top-metal-design
JP6822858B2 (ja) 2016-01-26 2021-01-27 株式会社半導体エネルギー研究所 剥離の起点の形成方法及び剥離方法
CN110709971B (zh) * 2017-03-28 2023-07-25 株式会社新川 电子零件封装装置
JP6879840B2 (ja) * 2017-06-28 2021-06-02 株式会社ディスコ テープ貼り機及びテープ外し方法
TWI685905B (zh) * 2017-07-12 2020-02-21 日商新川股份有限公司 接合裝置和接合方法
JP7154686B2 (ja) * 2018-06-06 2022-10-18 株式会社ディスコ ウェーハの加工方法
JP7143019B2 (ja) * 2018-06-06 2022-09-28 株式会社ディスコ ウェーハの加工方法
CN110581057A (zh) * 2018-06-11 2019-12-17 江西萨瑞微电子技术有限公司 一种单一芯片双信道保护组件的制造方法
JP7191458B2 (ja) * 2018-08-06 2022-12-19 株式会社ディスコ ウェーハの加工方法
JP7143023B2 (ja) * 2018-08-06 2022-09-28 株式会社ディスコ ウェーハの加工方法
US10896840B2 (en) * 2018-09-19 2021-01-19 Semiconductor Components Industries, Llc Tape heating methods
CN111816602A (zh) * 2020-07-21 2020-10-23 上海韦尔半导体股份有限公司 一种芯片制备方法及芯片

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722358A (ja) 1993-06-15 1995-01-24 Sharp Corp 半導体装置の製造方法
JPH08181197A (ja) 1994-12-27 1996-07-12 Hitachi Ltd 半導体装置の製造方法およびそれに用いるウエハマウンタ
JP3447518B2 (ja) 1996-08-09 2003-09-16 リンテック株式会社 接着シート貼付装置および方法
JP4240711B2 (ja) 1999-12-27 2009-03-18 日立化成工業株式会社 ダイボンディング用接着フィルム及び半導体装置の製造方法
JP3485525B2 (ja) 2000-07-06 2004-01-13 沖電気工業株式会社 半導体装置の製造方法
JP3827520B2 (ja) * 2000-11-02 2006-09-27 株式会社ルネサステクノロジ 半導体装置
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
JP3563730B2 (ja) * 2002-06-07 2004-09-08 松下電器産業株式会社 フレキシブルプリント回路基板
KR100468748B1 (ko) * 2002-07-12 2005-01-29 삼성전자주식회사 프리컷 다이싱 테이프와 범용 다이싱 테이프를 웨이퍼에 마운팅할 수 있는 다이싱 테이프 부착 장비 및 이를포함하는 인라인 시스템
JP4471563B2 (ja) * 2002-10-25 2010-06-02 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3933118B2 (ja) * 2003-10-02 2007-06-20 ソニー株式会社 半導体装置の製造方法および半導体装置の製造装置
JP2007048958A (ja) * 2005-08-10 2007-02-22 Renesas Technology Corp 半導体装置の製造方法および半導体装置

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TW200415754A (en) 2004-08-16
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CN101064242A (zh) 2007-10-31
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US20070015342A1 (en) 2007-01-18
JP4471563B2 (ja) 2010-06-02
US7122447B2 (en) 2006-10-17
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US7968428B2 (en) 2011-06-28
US20040097054A1 (en) 2004-05-20

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