CN100345256C - 半导体电路器件的制造方法 - Google Patents

半导体电路器件的制造方法 Download PDF

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Publication number
CN100345256C
CN100345256C CNB200310102320XA CN200310102320A CN100345256C CN 100345256 C CN100345256 C CN 100345256C CN B200310102320X A CNB200310102320X A CN B200310102320XA CN 200310102320 A CN200310102320 A CN 200310102320A CN 100345256 C CN100345256 C CN 100345256C
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wafer
semiconductor
die bonding
bonding film
semiconductor wafer
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CNB200310102320XA
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CN1499579A (zh
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阿部由之
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Renesas Electronics Corp
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Renesas Technology Corp
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Abstract

当将一个半导体晶片形成较薄时，防止晶片的翘曲。在一个半导体晶片上形成多个半导体元件，将一个保护带粘贴在半导体晶片的表面上，并且将半导体晶片的背面研磨成预定厚度。将一个管芯键合膜粘贴在半导体晶片的背面上，并且进一步将一个切割带粘贴在晶片背面。粘贴在半导体晶片上的切割带由一个保持夹具所保持。将保护带从晶片表面剥离，并且加热管芯键合膜，以改进半导体晶片与管芯键合膜之间的粘合。使半导体晶片经受切割，以分成各个半导体芯片。将半导体芯片按预定数管芯键合在一个布线衬底上，以制造一种半导体器件。

Description

半导体电路器件的制造方法
技术领域
本发明涉及一种半导体器件制造技术，更具体地说，涉及一种有效适用于半导体器件制造技术的技术，其中将一个粘合片粘贴在一个晶片上。
背景技术
在Japanese Unexamined Patent Publication No.Hei 10(1998)-112494中，描述了一种技术，将一个用于管芯键合的粘合片粘贴在一个半导体晶片上。按照其中所公开的技术，在从粘合片上剥离一个释放膜之后，将粘合片粘贴在半导体晶片上，并且切去粘贴在半导体晶片的外围部分上的粘合片部分(见专利文献1)。
在Japanese Unexamined Patent Publication No.2002-26039中，公开一种技术，其中将一个用于背面研磨的保护带粘贴在晶片的表面上，然后在背面研磨之后，在用于背面研磨的保护带粘贴其上的情况下，将一个用于管芯键合的粘合带粘贴在晶片的背面上，其后将用于背面研磨的保护带剥离，随后进行探查，然后将一个用于切割的保护膜粘贴在用于管芯键合的粘合带上，接着切割，并且之后利用管芯键合的粘合带进行管芯键合(见专利文献2)。
在Japanese Unexamined Patent Publication No.Hei 8(1996)-181197中，公开了一种技术，其中将一个保护带粘贴在晶片的表面上，然后在保护带附在其上的情况下，使晶片的背面经受研磨，其后在保护带附在其上的情况下，将一个切割带粘贴在晶片的背面，并且在晶片附在其上的情况下，将一个用于保持切割带的保持夹具粘贴在切割带的晶片周围部分，随后切割(见专利文献3)。
在Japanese Unexamined Patent Publication No.Hei 7(1995)-22358中，公开了一种技术，其中将一个用于保护和加强的带粘贴在晶片的表面上，然后在这种状态下，使晶片的背面经受研磨，并且之后粘贴在一个切割带上，其后将用于保护和加强的带剥离，并且执行切割(见专利文献4)。
[专利文献1]
Japanese Unexamined Paten Publication
No.Hei 10(1998)-112494
[专利文献2]
Japanese Unexamined Paten Publication
No.2002-26039
[专利文献3]
Japanese Unexamined Paten Publication
No.Hei 8(1996)-181197
[专利文献4]
Japanese Unexamined Paten Publication
No.Hei 7(1995)-22358
发明内容
如果为了制造一个薄半导体器件而使半导体晶片的厚度小，则在制造期间或制造步骤之间的运送期间，半导体晶片变得较容易翘曲和较容易破裂或碎裂，结果降低半导体器件制造产量，并且增加半导体器件制造成本。
按照本方法，其中在剥离释放膜之后，将一个粘合片粘贴在半导体晶片上，则出现一个问题，即在将粘合片粘贴在晶片上的时候，例如由于粘合片的不良张力平衡所引起，粘贴的粘合片易于起皱。一旦粘合片起皱，就难以再粘贴粘合片，并且因此必须取下担心有缺陷的半导体晶片，因而引起半导体器件制造成本的显著增加。
按照本方法，其中在从晶片剥离用于背面研磨的保护带之后，将用于切割的保护带粘贴在用于管芯键合的粘合带上，则在晶片上仅有用于管芯键合的粘合带，结果在粘贴用于切割的保护带之前或期间，恐怕会使晶片翘曲。一旦半导体晶片翘曲，在半导体器件的制造期间或在制造步骤之间的运送期间，就变得较容易使晶片破裂或碎裂。也变得较容易使晶片出现裂纹。出现这样的裂纹导致半导体器件制造产量的降低，以及半导体器件制造成本的增加。
按照本方法，其中在晶片上不形成用于管芯键合的粘合层，而在晶片上粘贴一个切割带，则必须利用银膏或其他类似材料使半导体芯片经受管芯键合，结果使制造工艺变得复杂，并且使半导体器件制造成本增加。
本发明的一个目的是提供一种能够防止晶片的翘曲的半导体器件制造方法。
本发明的另一个目的是提供一种能够降低半导体器件制造成本的半导体器件制造方法。
由以下描述和附图，本发明的以上和其他目的及新颖特点将变得显而易见。
以下将略述这里公开的本发明的典型方式。
按照本发明的半导体器件制造方法包括将一个保护带粘贴在一个晶片的第一表面上，研磨位于第一表面相对侧的该晶片的第二表面，将一个管芯键合膜粘贴在晶片的第二表面上，将一个切割带粘贴在晶片的第二表面上的管芯键合膜上，从晶片的第一表面剥离保护带，并切割晶片。
因而，在用于背面研磨的保护片在晶片上的粘贴状态下，将切割带粘贴在晶片上，以防止晶片的翘曲等。
此外，在按照本发明的半导体器件制造方法中，以管芯键合膜面向内这样的方式，将一个管芯键合膜和一个分离膜的叠层粘贴在晶片的背面，然后剥离分离膜，并且沿晶片的外围切断管芯键合膜。
通过在将管芯键合膜和分离膜一起粘贴在晶片的背面之后剥离分离膜，防止管芯键合膜起皱。
附图说明
图1是表示按照本发明的一个实施例的半导体器件制造工艺的过程流程图；
图2是半导体器件制造工艺中一个步骤的截面图；
图3是图2步骤之后半导体器件制造工艺中一个步骤的截面图；
图4说明将保护带粘贴在半导体晶片上的一个步骤；
图5说明图4步骤之后半导体器件制造工艺中的一个步骤；
图6说明图5步骤之后半导体器件制造工艺中的一个步骤；
图7说明半导体晶片的一个背面研磨步骤；
图8说明半导体晶片的背面的一个蚀刻步骤；
图9是表示一个管芯键合膜在半导体晶片上的粘贴状态的截面图；
图10说明将管芯键合膜粘贴在半导体晶片的背面上的一个步骤；
图11说明图10步骤之后半导体器件制造工艺中的一个步骤；
图12说明图11步骤之后半导体器件制造工艺中的一个步骤；
图13是表示一个切割带在半导体晶片上的粘贴状态的平面图；
图14是沿图13直线A-A所取的截面图；
图15说明将切割带粘贴在半导体晶片上的一个步骤；
图16说明从半导体晶片上剥离保护带的一个步骤；
图17说明一个半导体晶片加热步骤；
图18说明一个半导体晶片切割步骤；
图19说明降低切割带的粘合的一个步骤；
图20说明半导体芯片的一个管芯键合步骤；
图21是按照以上实施例的半导体器件的截面图；以及
图22是按照本发明的另一个实施例的半导体器件的截面图。
具体实施方式
在详细描述本发明之前，以下将说明这里使用的术语的含义。
1.当提到一种物质名字例如PET(聚对苯二甲酸乙二醇酯)时，除非另有说明，应该理解不仅包括所指的物质，而且包括含有所指物质(例如，元素、原子团、分子、聚合物、共聚物或化合物)作为主要成分或复合成分的那些物质。
例如，当提到一个硅区时，除非另有说明，包括纯硅区、含有掺杂硅作为主要成分的区，以及含有硅作为主要成分的混合结晶区，例如GeSi。当提到MOS时，除非另有说明，“M”不限于纯金属，而是还包括多晶硅(包括非晶硅)电极、硅化物层，以及其他呈现金属状特性的部件。此外，当提到MOS时，除非另有说明，“0”不限于氧化物膜，例如氧化硅膜，而是还包括氮化物膜、氧氮化物膜、氧化铝膜、其他常规电介质、高电介质和铁电膜。
2.关于晶片的例子，包括在制造半导体集成电路中使用的硅和其他半导体单晶衬底(一般盘状衬底、半导体晶片、半导体芯片，以及将它们分成单元集成电路区所获得的小片，以及它们的基区)，蓝宝石衬底，玻璃衬底，其他绝缘、半绝缘或半导体衬底，以及其复合衬底。
为了方便，在需要的情况下，以下实施例将分成多个部分或实施例来描述，除非另有说明，应该理解它们并不是相互无关的，而是一个与另一个的部分或全部的变更或细节或补充说明有关。
例如，当提到以下实施例中元件数时(包括件数、数值、数量和范围)，除非另有说明，以及除非基本上清楚地对指定数具有限制的情况外，对指定数没有限制，而是大于和小于指定数的数将可行。
而且，在以下实施例中，除非另有说明，以及除非它们基本上清楚地认为是必要的情况外，不用说它们的部件(包括构成步骤)不总是必要的。
类似地，在以下实施例中，应该理解当提到部件的形状和位置关系时，除非另有说明，以及除非答案基本上清楚地是否定的情况外，也包括与其大致类似或非常类似的那些形状和位置关系。这种情况对上述数值和范围也是如此。
在用于说明实施例的所有图中，具有相同功能的部分用同样标号识别，并且将省略其重复说明。
此外，在用于实施例的图中，甚至可能画阴影线于平面图，以使它们较容易看见。
以下将参考附图详细地描述本发明的实施例。
图1是表示用于制造按照本发明的一个实施例的半导体器件(半导体集成电路器件)的过程的过程流程图。图2和图3是在本实施例的半导体器件制造工艺中步骤的截面图。
首先，如图2所示，提供一个例如由单晶硅形成的晶片(用于制造半导体集成电路的半导体衬底)或半导体衬底1。然后，按照已知的半导体器件制造技术，在半导体晶片1上形成多个半导体元件，例如MOSFET(金属氧化物半导体场效应晶体管)(步骤S1)。在半导体晶片1上形成的半导体元件不限于MOSFET，而可以形成各种其他半导体元件。
其次，如图3所示，在半导体晶片1的一个表面上(半导体晶片1的半导体元件侧的主表面：第一面)，粘贴一个用于背面研磨的保护带(BG片、保护片)2(步骤S2)。在后文描述的半导体晶片1的背面研磨(BG：背面研磨)步骤中，保护带2起作用以保护半导体晶片1的表面1a，或保护其上形成的半导体元件，并且防止通过背面研磨变薄的半导体晶片1的翘曲。足够使保护带2具有这样的强度，以便能防止半导体晶片1在室温下翘曲。保护带2的一面具有粘性(粘合性)，并且将保护带2粘贴在晶片上，以便其粘性面(粘性或粘合面)与晶片1的表面1a接触。保护带2能用各种材料，例如PET(聚对苯二甲酸乙二醇酯)和EVA(乙烯/醋酸乙烯酯共聚物)的叠层，或聚氯乙烯中的任何一种形成。
图4至图6说明将保护带2粘贴在半导体晶片1上的步骤。
如图4所示，将一个分离件或分离膜3粘贴(层叠)在保护带2的粘性面上，并且在这个状态下将保护带2缠绕在一个保护带运送辊4上。将分离膜3从保护带运送辊4送到一个拉紧辊5，并且缠绕在该拉紧辊上。在分离膜3从其剥离之后，保护带2通过辊子6、7和8送到并缠绕在一个保护带拉紧辊9上。构成棍子7和8，以便在图4中横向(沿与半导体晶片1的主表面平行的方向)可移动。辊子7和8在将保护带2向下压在一个置于工作台10(以晶片的表面1a侧面向上这样方式安排)上的半导体晶片1上的时候横向移动，从而将保护带2粘贴在晶片表面1a上。随后，将一个切片机11向下移到半导体晶片1上方，并且如图5所示，利用切片机11的刀片11a沿晶片1的外围(周线)切断保护带2。此时，使切片机11旋转，从而使切片机11的刀片11a沿晶片1的外围移动，并且沿晶片1的外围切断保护带2。其后，将切片机11向上移动，并且如图6所示，使辊子7和8横向移动，以便使保护带2除其与半导体晶片1键合的部分外的部分(在其与晶片1键合的部分的挖出状态下的保护带2)与晶片1分离，并且缠绕在保护带拉紧辊9上。结果，保护带2保持粘贴(键合)在半导体晶片1的表面1a上。
在保护带2这样粘贴在半导体晶片1的表面(第一面)1a上之后，使晶片1的表面1a的相对面，即背面(第二面)1b经受研磨(步骤S3)，从而减小半导体晶片1的厚度。图7是半导体晶片1的背面研磨步骤的说明图。
如图7所示，在保护带2粘贴其上的情况下使半导体晶片1的表面1a侧由一个BG卡盘台21所保持，并且使晶片1的背面(第二面)1b经受研磨(磨光)。例如，通过旋转由BG卡盘台21所保持的半导体晶片1，并且在供给研磨水22例如纯水下，将一个旋转研磨轮23置为与晶片1成为压力接触，以磨掉(磨光)晶片1的背面1b，能实现这点。
其次，如果必要，使用一种蚀刻溶液来蚀刻半导体晶片1的背面1b(步骤S4)，从而使晶片背面1b清洁和变平。图8说明用于晶片背面1b的蚀刻步骤。
如图8所示，在保护带2粘贴其上的情况下使半导体晶片1的表面1a侧由一个蚀刻机卡盘台24所保持，并且蚀刻半导体晶片1的背面1b。例如，通过旋转由蚀刻机卡盘台24所保持的半导体晶片1，并且将一种蚀刻溶液25例如氢氟酸和硝酸的混合溶液从一个喷嘴26供到晶片的背面1b，以蚀刻背面1b，来执行蚀刻。这样从喷嘴26供到晶片背面1b上的蚀刻溶液25从蚀刻溶液回收窗27回收。可以省略用于晶片背面1b的蚀刻步骤。
然后，将一个管芯键合膜30粘贴在半导体晶片的背面1b(步骤S5)。图9是表示管芯键合膜30在半导体晶片1上的粘贴状态的截面图。如后文将要描述，在将半导体晶片1切割成半导体芯片(芯片)之后，管芯键合膜30起一个用于管芯键合各半导体芯片的键合层(粘合层)的作用。
参考图10至图12，以下将更详细地描述将管芯键合膜30粘贴在半导体芯片1的背面1b上的步骤。
如图10所示，在将管芯键合膜30粘贴在晶片背面1b的时候，使用一个包括管芯键合膜30和粘贴其上的分离件或分离膜31的片(叠层)32。例如，分离膜31由聚酯或PET形成。分离膜31相对刚性(坚硬)，并且具有硬度，而且可以制成相对厚，例如100μm左右。管芯键合膜30用一种热塑树脂材料例如聚酰亚胺作为主要成分形成。管芯键合膜30相对薄并且软，其厚度例如可以设为25μm左右。
将包括管芯键合膜30和分离膜31的片(叠层片)32缠绕在一个管芯键合膜运送辊33上。将缠绕在管芯键合膜运送辊33上的片32从运送辊33送过辊子34和35，并且在辊子35上，使管芯键合膜30和分离膜31剥离或分离。然后当分离膜30缠绕在一个分离件拉紧辊37上的时候，将管芯键合膜30缠绕在管芯键合膜拉紧辊36上。构成辊子5，以便在图10中横向(沿与半导体晶片1的主表面平行的方向)可移动。当将片32向下压在安排在一个工作台38上的半导体晶片1的背面1b上的时候(以晶片1的背面1b面向上这样方式安排)，使辊子35横向移动，允许片32粘贴在晶片背面1b上。此时，必须十分小心，以便片32的管芯键合膜30侧与晶片背面1b接触。也就是，以管芯键合膜30安置在内部这样的方式，将包括管芯键合膜30和分离膜31的片32粘贴在晶片背面1b上。
其次，如图11所示，使辊子35移动(与用于粘贴片32的移动方向相对的方向)，以便分离膜31通过分离件拉紧辊37缠绕，并且从管芯键合膜30剥离。结果，仅管芯键合膜30保留在晶片背面1b上。然后，将切片机39向下移到半导体晶片1上，并且利用刀片39a沿半导体晶片1的外围(周线)切断管芯键合膜30。在这个切断操作中，使切片机39旋转，以便切片机39的刀片39a沿半导体晶片1的外围移动，并且沿晶片的外围切断管芯键合膜30。
在切断管芯键合膜30之后，将切片机39升起，并且如图12所示，利用管芯键合膜拉紧辊36的缠绕操作，将管芯键合膜30除其键合在半导体晶片1上的部分外的部分(在其键合在晶片1上的部分的挖出状态下的管芯键合膜30)从晶片1分开，并且通过管芯键合膜拉紧辊36缠绕。因而，管芯键合膜30保持粘贴(键合)在半导体晶片1的背面1b上。然后，使用一个加热器(未示出)(例如，一个置于工作台38之内的加热器)，将半导体晶片1加热，允许晶片1和管芯键合膜30暂时键合在一起。此时，加热温度(第一温度)相对低，并且例如100℃左右。由于用于暂时键合半导体晶片1和管芯键合膜30的加热温度这样相对低，所以不担心粘贴在晶片表面1a上的保护带2的翘曲。因而，有可能防止半导体晶片1的翘曲。暂时键含意指一种使用这样程度的键合力有效的键合，以防止在随后步骤(直到在后文所述的第二温度下的加热步骤)或在制造步骤期间的运送期间，半导体晶片1和管芯键合膜30相互剥离。如果在某种程度上即使不加热也确保管芯键合膜30与半导体晶片1之间粘合到一定程度，可以省略用于暂时键合的加热步骤。
如上所述，在本实施例中，管芯键合膜30和分离膜31一起粘贴在半导体晶片1的背面1b上，其后仅将分离膜31剥离，并且将管芯键合膜30切成预定形状。如果管芯键合膜30单独粘贴在半导体晶片1的背面1b上，由于管芯键合膜30相对薄并且软，所以粘贴在晶片背面上的管芯键合膜将起皱，并且因此气泡易于进入管芯键合膜30与半导体晶片1之间。当粘贴在半导体晶片1的管芯键合膜30这样起皱或气泡进入时，不易于将管芯键合膜30剥离(将管芯键合膜30剥离，并将另一个管芯键合膜再粘贴在晶片上)，导致整个半导体晶片1成为有缺陷，并且在制造半导体器件时不再可用。这样引起半导体器件制造产量的显著降低，以及半导体器件制造成本的增加。在本实施例中，由于管芯键合膜30和相对坚硬和刚性的分离膜31一起粘贴在半导体晶片1的背面1b上，所以有可能防止粘贴在晶片背面1b上的管芯键合膜30的起皱。还可能防止气泡进入半导体晶片1与管芯键合膜30之间。另外，由于在切断管芯键合膜30之前剥离分离膜31，所以能将分离膜31的厚度制成相对大。容易将分离膜31制成相对刚性(坚硬)，以容易防止管芯键合膜30的起皱。而且，在本实施例中，由于管芯键合膜30包含一种热塑树脂作为主要成分，所以能在片32粘贴在半导体晶片1上之后仅剥离分离膜31。
在从半导体晶片1剥离保护带2之后将管芯键合膜30粘贴在半导体晶片1的背面1b上的情况下，作为保护带2已从晶片1剥离的结果，晶片1将翘曲，并且将管芯键合膜30粘贴在这样翘曲的晶片上。因此，粘贴在晶片背面1b上的管芯键合膜30易于起皱。然而，在本实施例中，在保护带2粘贴在晶片表面1a上的情况下，将管芯键合膜30粘贴在晶片背面1b。因而，将管芯键合膜30粘贴在晶片背面，同时能用保护膜2抑制晶片1的翘曲。因此，在管芯键合膜30粘贴在晶片背面1b下，有可能更肯定地防止出现起皱。
在将管芯键合膜30这样粘贴在半导体晶片1的背面1b之后，将一个切割带(晶片板)40粘贴在晶片背面1b(管芯键合膜30粘贴其上的面：第二面)(晶片安装：步骤S6)。图13是表示切割带40在半导体晶片1上的粘贴状态的平面图(顶视图)，以及图14是沿图13直线A-A所取的截面图。
切割带40是其一面具有粘性和延伸性的带(片)，并且将半导体晶片1的背面1b粘贴在具有粘性(粘性面)的面。因此，将切割带40粘贴在位于晶片背面1b上的管芯键合膜30上。切割带40由一个安排在半导体晶片1周围的保持夹具(运载夹具、运载托环和支架：保持装置)41所保持。例如，保持夹具41由一种金属材料(例如SUS)形成，并且是一个比晶片1大的环形。在后文将要描述的晶片1的切割步骤之后，切割带40起作用以保持切断件(半导体芯片)。
图15说明将切割带40粘贴在半导体晶片1上的步骤。如同一图所示，将切割带40粘贴在半导体晶片1的背面1b上，并且将一个比晶片1大并且例如为环形的保持夹具41粘贴在晶片1周围。为了增强半导体晶片1与切割带40之间的粘合，用一个粘贴辊子43将工作台42上安排的晶片1的背面1b(管芯键合膜30)上所粘贴的切割带40向下压。可以在半导体晶片1粘贴在切割带40之后，将保持夹具41粘贴在切割带40上，但是，可以在切割带40粘贴在保持夹具41上之后，将晶片背面1b粘贴在由保持夹具41所保持的切割带40上。
其次，从半导体晶片1的表面1a剥离保护带2(步骤S7)。图16说明从半导体晶片1剥离保护带2的步骤。
如图16所示，通过辊子53和54运送一个缠绕在释放带运送辊51上的释放带52，并且缠绕在一个释放带拉紧辊55上。释放带52的一面具有高度粘性(比保护面2的粘性面的粘性强)，并且将这个粘性面向下压并粘贴在半导体晶片1的表面1a上，也就是，通过图16中横向(沿与半导体晶片1的主表面平行的方向)移动的辊子54粘贴在保护带2上。然后，使辊子54移动(沿与释放带52的粘贴方向相对的方向)，因而将释放带52缠绕在释放带拉紧辊55上。此时，由于与保护带2接触的释放带52的面具有强粘性，所以保护带2和释放带52一起从半导体晶片1剥离。因而，能从晶片表面1a剥离保护带2，并且因此使晶片表面(半导体元件形成面)1a暴露。
其次，为了增强(改进)半导体晶片1与管芯键合膜30之间的粘合，将晶片1(管芯键合膜30)加热到第二温度(步骤S8)。图17说明半导体晶片1的加热步骤。
如图17所示，用一个加热器60加热由保持夹具41所保持的粘贴在切割带40上的半导体晶片1。此时，加热温度(第二温度)比用于暂时相互键合半导体晶片1和管芯键合膜30的加热温度(第一温度)高，并且例如约为80℃(加热时间例如为2秒左右)。应用这个加热，将含有一种热塑树脂材料作为主要成分的管芯键合膜30软化，并且其后通过冷却变成坚硬(固化)，因而使半导体晶片1和管芯键合膜30成为相互密切接触。
由于在相对高温度下(第二温度：例如180℃)执行这个加热步骤，所以易于出现半导体晶片1的翘曲。因此，如果在将管芯键合膜30粘贴在半导体晶片1上之后，并且在粘贴切割带40之前，执行加热到第二温度，则出现晶片1的翘曲的担心。如果出现翘曲，将在随后步骤或在运送期间引起晶片1的破裂。在本实施例中，在粘贴切割带40之后执行加热到第二温度。因而，在半导体晶片1粘贴在由保持夹具41所保持的切割带40的状态下，执行加热到第二温度。由于由保持夹具4所保持的切割带40保持(加强)粘贴其上的半导体晶片1，所以有可能确保在加热步骤防止晶片1的翘曲。
而且，在本实施例中，由于在这个加热步骤之前(在第二温度下的加热)剥离保护带2，所以无需对保护带2使用一种高耐热材料。例如，即使用一种在第二温度下变形的这样材料形成保护带2，因为在没有保护带2(在剥离之后)下执行加热到第二温度，所以不担心半导体晶片1由于保护带2引起翘曲。可以在这个加热步骤之后执行保护带剥离步骤，并且在这种情况下优选地使用一种高耐热，并且即使在第二温度下也难以变形的材料形成保护带2。如果使用这样材料形成保护膜2，有可能防止由保护膜2的变形所引起的半导体晶片1的翘曲，或防止保护带2变得难以剥离。更优选地使用一种能耐受第二温度(难以变形)的材料形成切割带40。
其次，使半导体晶片1经受切割(步骤S9)。图18说明半导体晶片1的切割步骤。
如图18所示，利用一个通过切割设备的主轴72而高速旋转的刀片(切割刀片)73，将粘贴在安排在工作台71上并且由保持夹具41所保持的切割带40上的半导体晶片1从其表面1a侧切割或切断。在半导体晶片1上，形成多个半导体元件(未示出)，并且沿相邻半导体元件形成区之间的划线区(划线)切割晶片1。在图18中，将切割带40沿其深度半切割或切断。作为切割的结果，将半导体晶片1分成芯片区(单元集成电路区)或只是成为芯片(单元集成电路区或其基本部分)或半导体芯片(芯片)80，它们由切割带40所保持。切割深度可以是管芯键合膜30的一半，或半导体晶片1的一半。也可以采用一种如半切断方法这样的切割方法，其中将晶片1切割到其深度的大约一半，一种不完全切断方法，其中当仅允许保留晶片的稍微深度部分不切割的时候，切割晶片1，或一种全切断方法，其中完全切断晶片1。
其次，执行一个用于降低切割带40的粘合(粘性)的处理。例如，通过对其应用紫外线光(UV)，使切割带40粘性变得较弱(步骤S10)。图19说明用于降低切割带40的粘性的过程。
如图19所示，使用UV辐射器或UV灯(紫外线灯)81，将紫外线光(UV)应用于粘贴于由保持夹具41所保持的切割带40上的切割半导体晶片1。从UV灯81发射的紫外线光直接地或经过反射器82反射之后应用于切割带40。在本实施例中，将一种易于用紫外线光使粘合变得较弱的材料用作切割带40(或切割带40的粘合层)的材料。关于所述材料，例如使用一种紫外线固化树脂。应用这种材料，能降低切割带40的键合强度，即切割带40与管芯键合膜30之间的键合强度。
其次，使半导体芯片(芯片)80经受管芯键合(步骤S11)。图20说明半导体芯片80的管芯键合步骤。
如上所述，通过切割步骤将半导体晶片1分成多个半导体芯片80，并且通过紫外线辐射致使芯片80(以及粘贴在各芯片的背面上的管芯键合膜30)较弱地粘合在切割带40上。如图20所示，用一个管芯键合器(管芯键合设备)的套夹90夹住半导体芯片80，并且安排(安装)在布线衬底91上的预定位置。为了用套夹91从切割的半导体芯片1夹住各半导体芯片80，并且运送芯片，使一个针状销92从半导体晶片1的背面(切割带40侧)向上插入(芯片向上插入)，使芯片80分开并夹住。然后将半导体芯片80以其背面(管芯键合膜30的键合面：第二面侧)面对布线衬底91(下面)这样方式安排在布线衬底91上。因而，通过管芯键合膜30将芯片80安排在布线衬底91上。
在布线衬底91上可以仅安装一个半导体芯片80，但是如图20所示，首先在布线衬底91上可以安排另一个半导体芯片(半导体器件)80a，然后可以在半导体芯片80a上安排半导体芯片80。半导体芯片80a能以半导体芯片80相同方式制造，并且将一个与管芯键合膜30相同的管芯键合膜30a粘贴在芯片80a的背面。堆叠(层叠)在布线衬底91上的半导体芯片数可以是任意数。
其次，将其上安装了半导体芯片80和80a的布线衬底91加热到预定温度(例如约180℃)(也就是，加热管芯键合膜30和30a)，以软化管芯键合膜30和30a，从而允许半导体芯片80通过管芯键合30键合在半导体芯片80a上，以及允许半导体芯片80a通过管芯键合膜30a键合在布线衬底91上。其后，执行冷却以硬化管芯键合膜30和30a，允许半导体芯片80通过管芯键合膜30固定在半导体芯片80a上，以及允许半导体芯片80a通过管芯键合膜30a固定在布线衬底91上。在半导体芯片80直接安装在布线衬底91上的情况下，加热并软化管芯键合膜30，然后冷却并硬化，从而将半导体芯片80通过管芯键合膜30直接固定在布线衬底91上。
如果不使用管芯键合膜30而使用银膏或其他类似材料执行半导体芯片的管芯键合，由于将如包含有机溶剂的银膏这样的粘合剂应用于半导体芯片的背面，担心有机溶剂可能在洁净室内蒸发和扩散，因此就工作环境而言产生问题。另外，因为将如银膏这样的粘合剂应用于半导体芯片的背面，随后键合在布线衬底上，所以制造工艺变得复杂，结果增加半导体芯片制造成本。如上所述，在半导体芯片上安装另一个半导体芯片的情况下(在堆叠多个半导体芯片的情况下)，用于将上面半导体芯片键合在下面半导体芯片上的银膏很可能涂敷到电极焊点上，这样将使半导体器件的可靠性变坏。在本实施例中，使用管芯键合膜30执行半导体芯片80的管芯键合，因此消除了与工作环境关联的问题。另外，改进了可操作性，并且简化了制造工艺。还容易堆叠多个半导体芯片。因此，改进了半导体器件的可靠性。此外，改进半导体器件制造产量，并且变得有可能降低半导体器件制造成本。
如图21所示，在上述管芯键合步骤之后，通过键合线92和92a将半导体芯片80和80a的表面上的电极焊点与布线衬底91上的布线相互电连接。然后在布线衬底91上形成密封树脂(模制树脂)93，以便覆盖半导体芯片80、80a和键合线92、92a，并且在布线衬底91的底部形成焊料球或其他类似形状焊料，用作外部连接端子，随后如果必要切断布线衬底91。这样制造如图21所示的本实施例的这样的半导体器件100。
图21所示的半导体器件100以如半导体芯片80相同方式在布线衬底91上制造，并且它是一个两级堆叠型半导体器件，其中在布线衬底91上堆叠外部尺寸与半导体芯片80不同的半导体芯片80和半导体芯片80a。关于半导体芯片80和80a，根据需要可以使用由各种半导体元件形成的半导体芯片。例如，下面(下级)半导体芯片80a是一个8M的SRAM，而上面(上级)半导体芯片80是一个4M的SRAM。在图21所示的半导体器件100中，上面和下面半导体芯片80、80a两者通过键合线92和92a与布线衬底91(上面的线)电连接，但是下面半导体芯片80a例如可以通过倒装芯片连接而与布线衬底91(上面的线)电连接。
在具有多个堆叠半导体芯片的这样的半导体器件(多级堆叠型半导体器件)中，为了抑制由于堆叠多个半导体芯片而引起的半导体器件的厚度增加，必须使各半导体芯片的厚度相对小。例如，在图21所示的半导体器件100中，长度和宽度各为6.5mm左右，厚度方向的尺寸约为1.4mm，以及半导体80和80a各自厚度约为150μm。为了制造这样相对薄的半导体芯片80和80a，必须使半导体晶片变薄(例如150μm左右)。然而，如果例如通过背面研磨使半导体晶片变薄，晶片变得较容易翘曲，并且因此容易破裂或碎裂，导致半导体器件制造产量降低。在本实施例中，在将保护带2粘贴在半导体晶片1之后，并且直到切割步骤，半导体晶片1处在由切割带40所保持(固定或加强)的状态，并且因而有可能抑制或防止晶片1的翘曲。而且，在本实施例中，在保护带2粘贴在半导体晶片的表面1a上的状态下，将管芯键合膜30粘贴在半导体晶片1的背面1b，并且在晶片1粘贴并固定在切割带40(由保持夹具41保持)之后，执行加热，以改进晶片1与管芯键合膜30之间的粘合(粘着)，以便防止由加热所引起的晶片1的翘曲。因此，即使通过背面研磨使半导体晶片1变薄，晶片1也很少翘曲，并且因而有可能在各制造步骤中或在制造步骤之间的运送期间，防止晶片的破裂或碎裂。因此，有可能改进由半导体晶片1所制造的半导体芯片(半导体器件)的制造产量，以及在半导体芯片安装其上的半导体器件的制造产量、因而允许降低它们的制造成本。变得也有可能减小各半导体器件的尺寸和厚度。
图22表示一个以四个半导体芯片80b至80e堆叠其上的四级堆叠型半导体器件100a。堆叠在布线衬底91上的半导体芯片80b至80e能以如半导体芯片80相同方式制造，并且利用与管芯键合膜30相同的管芯键合膜30b至30e经受管芯键合。
在图22所示半导体器件100a中，在布线衬底91上安装半导体芯片80b，在半导体芯片80b上安装一个隔离件101，以及按这样次序在隔离件101上安装半导体芯片80c至80e。通过键合线92b至92e将半导体芯片80b至80e上的电极焊点与布线衬底91上的电极焊点电连接。关于半导体芯片80b至80e，根据需要可以使用由各种半导体元件形成的半导体芯片。例如，半导体芯片80b是一个64M的快闪存储器，半导体芯片80c是一个32M的快闪存储器，半导体芯片80d是一个8M的SRAM，以及半导体芯片80e是一个32M的PS RAM。关于隔离件101，例如可以使用一个通过将无半导体元件的半导体晶片切割成预定形状而获得的芯片。通过一个管芯键合膜102将隔离件101安装在半导体芯片80b上。
例如，为了防止连接在半导体芯片80b上的键合线92b与半导体芯片80c接触，将隔离件101插入在两个芯片80b与80c之间，并且具有比芯片80b和80c较小的外部尺寸。例如在芯片80b的外部尺寸和芯片80c的外部尺寸相互类似的情况下，有效实施在半导体芯片80b与80c之间隔离件101的插入。
半导体器件100a例如约10mm长，11.5mm宽，以及1.4mm厚。由于图22所示的半导体器件100a的堆叠半导体芯片(和隔离件)数比图21所示半导体器件100大，所以半导体芯片80b至80e与隔离件101相对薄，并且例如各为约90μm厚。因此，在制造半导体器件100a(半导体芯片80b至80e)的情况下，必须将半导体晶片背面研磨成较薄(例如约90μm)。按照本发明的半导体器件制造方法，即使在半导体晶片制成非常薄的情况下，也有可能防止晶片的翘曲和破裂，并且因此有可能改进由晶片制造的半导体芯片和用芯片制造的半导体器件的制造产量。因此，有可能降低制造半导体芯片和半导体器件的成本。
本实施例的制造工艺适合制造相对薄的半导体芯片(半导体器件)，例如适合通过将半导体晶片研磨成厚度约200μm或更小，以制造厚度约200μm或更小的半导体芯片(半导体器件)的情况。如果半导体晶片的厚度约200μm或更小，晶片易于翘曲，但是按照本实施例，有可能抑制半导体晶片的翘曲，并且制造半导体器件。同样在通过堆叠多个半导体芯片(在布线衬底或其他类似衬底上)来制造半导体器件的情况下，因为各半导体芯片相对薄，所以应用按照本实施例的半导体器件制造工艺非常有效。
虽然以上通过其实施例具体地描述了本发明，但是不用说本发明不限于以上实施例，而是在不违反本发明的要点的范围之内，可以实现各种各样的改变。
以下简短描述这里公开的本发明的典型方式所获得的效果。
将一个保护带粘贴在一个晶片的第一面上，使位于第一面相对侧的晶片的第二面经受研磨，将一个管芯键合膜粘贴在晶片的第二面上，将一个切割带粘贴在晶片的第二面上的管芯键合膜上，然后从晶片的第一面剥离保护带，并且使晶片经受切割，从而有可能防止晶片的翘曲。
将一个管芯键合膜和一个分离膜的叠层粘贴在晶片的背面，以便管芯键合膜面向内侧，然后剥离分离膜，并且沿晶片的外围切断管芯键合膜，从而有可能防止管芯键合膜的起皱。

Claims (4)

1.一种制造半导体器件的方法，包括如下步骤：
(a)提供一个在其上形成多个半导体元件的晶片；
(b)将一个管芯键合膜和一个分离膜的叠层粘贴在所述晶片的背面上，以便所述管芯键合膜面向内；
(c)剥离所述分离膜；以及
(g)沿所述晶片的外围切割所述管芯键合膜。
2.按照权利要求1的方法，
其中所述管芯键合膜包含一种热塑树脂材料。
3.按照权利要求1的方法，
其中所述分离膜比所述管芯键合膜硬。
4.按照权利要求1的方法，
其中在通过切割所述晶片而获得管芯键合芯片的时候，所述管芯键合膜起一个粘合层的作用。
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