TWI685905B - 接合裝置和接合方法 - Google Patents

接合裝置和接合方法 Download PDF

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Publication number
TWI685905B
TWI685905B TW107123849A TW107123849A TWI685905B TW I685905 B TWI685905 B TW I685905B TW 107123849 A TW107123849 A TW 107123849A TW 107123849 A TW107123849 A TW 107123849A TW I685905 B TWI685905 B TW I685905B
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film
bonding
bonding surface
reel
peeling
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TW107123849A
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TW201909295A (zh
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瀬山耕平
野口勇一郎
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日商新川股份有限公司
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
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Abstract

本發明提供一種接合裝置和接合方法，於為了防止上爬 而使用膜的接合裝置中，抑制裝置的生產性下降。接合裝置具備：接合機構，具有經由膜而可裝卸地保持半導體晶粒的接合面、及朝接合面提供熱的加熱器；膜搬送機構，朝接合面供給膜；剝離桿，可進入膜與接合面之間；以及驅動部，驅動剝離桿。

Description

接合裝置和接合方法
本發明是有關於一種接合裝置及接合方法。
將半導體晶粒(semiconductor die)等的電子零件接合於基板上的安裝技術，已為人所知。例如，於專利文獻1中，為了抑制因接著劑的上爬(creeping up)而導致接著劑附著於半導體晶粒上，經由樹脂膜來將半導體晶粒接合於基板上。
[現有技術文獻] [專利文獻]
[專利文獻1]日本專利特開2015-35493號公報
但是，於專利文獻1的構成中，存在：膜因加熱器的熱而熔融，並黏附於接合工具上的情況。膜的黏附導致裝置的停止而使裝置的生產性下降，且需要進行維護作業。
本發明是有鑑於此種情況而成，其目的在於：提供一種接合裝置及接合方法，在為了防止上爬而使用膜的接合裝置中， 可抑制裝置的生產性下降。
本發明的一形態是將電子零件安裝於基板或其他電子零件上的接合裝置，包括：接合部，具有：接合面，經由膜而能夠裝卸地保持電子零件，及熱源，朝接合面供給熱；膜供給部，沿著接合面而供給膜；剝離構件，能夠進入膜與接合面之間；以及驅動部，使剝離構件在膜與接合面之間移動，來使膜自接合面分離。
於接合裝置中，接合工具經由被供給至接合面上的膜來保持電子零件。而且，接合工具自熱源朝接合面提供熱，將所保持的電子零件安裝於基板或其他電子零件上。當提供了熱時，該熱經由接合面與膜而朝電子零件移動。於是，可能產生膜因該熱而黏附於接合面上的情況。因此，接合裝置藉由驅動部來驅動剝離構件。根據該驅動，剝離構件在膜與接合面之間移動，因此，可剝離黏附於接合面上的膜。因此，接合裝置可消除膜對於接合面的黏附。因此，於為了防止上爬而使用膜的接合裝置中，可抑制裝置的生產性下降。
根據本發明，提供一種接合裝置及接合方法，於為了防止上爬而使用膜的接合裝置中，可抑制裝置的生產性下降。
1‧‧‧接合裝置
2‧‧‧晶圓平台
2a‧‧‧搭載面
3‧‧‧中間平台
3a‧‧‧載置面
4‧‧‧接合平台
4a‧‧‧搭載面
6‧‧‧接合單元
7‧‧‧XY平台
8‧‧‧控制部
8a‧‧‧操作部
8b‧‧‧顯示部
9‧‧‧攝像部
11‧‧‧接合頭
12‧‧‧接合工具
13‧‧‧Z軸驅動機構
14‧‧‧攝像部
20‧‧‧接合機構
21‧‧‧本體
21a‧‧‧基礎區塊
21b‧‧‧接合區塊
21S‧‧‧接合面
22‧‧‧加熱器
30‧‧‧膜搬送機構
31‧‧‧供給單元
32‧‧‧回收單元
33‧‧‧供給本體
34‧‧‧供給捲盤
35A、35B‧‧‧供給銷
36‧‧‧回收本體
37‧‧‧回收捲盤
38A、38B‧‧‧回收銷
40‧‧‧膜剝離機構
41‧‧‧蓋
42‧‧‧臂體
42a‧‧‧連結部
43‧‧‧剝離桿(剝離構件)
44‧‧‧致動器
44a‧‧‧致動器本體
44b‧‧‧驅動桿
45‧‧‧連桿機構
46‧‧‧第1連桿
46a‧‧‧固定節
46b‧‧‧驅動節
47‧‧‧第2連桿
47a‧‧‧固定節
47b‧‧‧驅動節
50‧‧‧驅動部
100‧‧‧半導體裝置
101‧‧‧基板
101a‧‧‧第1主面
101b‧‧‧第2主面
102‧‧‧半導體晶粒
102a‧‧‧第1主面
102b‧‧‧第2主面
103‧‧‧接著構件
104‧‧‧電極墊
106‧‧‧凸塊電極
107‧‧‧電極墊
108‧‧‧保護膜
110‧‧‧晶圓
110a‧‧‧第1主面
110b‧‧‧第2主面
200‧‧‧膜
A1‧‧‧突出方向
A2‧‧‧右方向
A3‧‧‧斜下方向
CA‧‧‧合成
C1、C2‧‧‧移動成分
D‧‧‧間隙
L1‧‧‧假想線
L2‧‧‧中心線
T1‧‧‧軌跡
T2‧‧‧軌跡
UD‧‧‧下死點
X、Y、Z‧‧‧軸
S1~S5‧‧‧步驟
S6a、S6b、S6c、S6d、S6e、S6f、S6g、S6、S7、S7a‧‧‧步驟
S7b‧‧‧第1動作
S7c‧‧‧第2動作
200a‧‧‧膜的一部分
圖1是表示實施形態的接合裝置的構成的概略圖。
圖2是表示藉由圖1的接合裝置來組裝的半導體裝置的剖面的圖。
圖3是將圖1中所示的接合裝置的接合工具放大來表示的立體圖。
圖4是表示第1形態中的膜剝離機構的正面圖。
圖5是表示自第1形態朝第2形態的過渡剛完成後的膜剝離機構的正面圖。
圖6是表示第2形態中的膜剝離機構的正面圖。
圖7是表示膜剛剝落後的膜剝離機構的正面圖。
圖8是表示接合方法的主要步驟的流程圖。
<接合裝置>
以下，一面參照所附圖式，一面對用以實施本發明的形態進行詳細說明。於圖式的說明中，對同一個元件標註同一個符號，並省略重複的說明。
再者，於本發明的實施形態中，所謂透氣性，是指：夾在接合頭與半導體晶粒之間的防止上爬用的片材，因自形成於接合頭上的吸引孔供給的真空，而可使空氣透過至接合頭可將半導體晶粒保持於其接合面上的程度的性能。即，具有透氣性的防止 上爬用的片材，例如為多孔質片材、不織布或形成有透氣孔的片材，但不對其形態加以限定來解釋。於本實施形態中，將防止上爬用的片材設為形成有透氣孔的片材來進行說明。即，例示了：最初不具有透氣性，但藉由設置透氣孔的加工，而獲得透氣性的片材。
如圖1所示，接合裝置1於基板101的接合區域中，安裝作為電子零件的一例的半導體晶粒102。藉由該安裝，而獲得具備基板101與半導體晶粒102的半導體裝置100。於以下的說明中，將相互正交的X軸及Y軸設為與半導體晶粒102的主面(或任一個平台的主面)平行的方向。Z軸是與X軸及Y軸兩者垂直的方向。
首先，對藉由接合裝置1來組裝的半導體裝置100進行說明。如圖2所示，半導體裝置100具有：基板101與半導體晶粒102。
基板101呈單片的板狀，具有：第1主面101a與第2主面101b。於第1主面101a上，形成至少一個搭載有半導體晶粒102的搭載區域。因此，將半導體晶粒102接合於基板101的第1主面101a上。第2主面101b是第1主面101a的背面。基板101的材質例如為：有機材料(例如環氧基板或聚醯亞胺基板)、無機材料(例如玻璃基板)、或這些有機材料與無機材料的複合材料(例如玻璃環氧基板)。基板101是所謂的載板(interposer)。
再者，亦可於一片基板上設置多個搭載區域。於此情況 下，將半導體晶粒102接合於基板的各搭載區域中。之後，於各搭載區域中使基板變成單片，藉此獲得多個半導體裝置100。另外，半導體裝置亦可具有：積層有多個半導體晶粒102的堆疊結構。堆疊型的半導體裝置的兩個以上的半導體晶粒102可全部朝向同一個方向。另外，堆疊型的半導體裝置的兩個以上的半導體晶粒102亦可朝向互不相同的方向。另外，半導體裝置亦可於一個搭載區域上，接合兩個以上的半導體晶粒102。
半導體晶粒102是藉由熱硬化性樹脂等的接著構件103，而被固定於基板101上。
半導體晶粒102於俯視下呈比基板101小的單片的板狀，具有：第1主面102a及第2主面102b。第1主面102a設置有規定的電路圖案。於第1主面102a上，進而設置多個電極墊104、多個凸塊電極106、及保護膜108。而且，第1主面102a與基板101的第1主面101a對向。此種接合形態被稱為：面向下接合(fsce down bonding)。第2主面102b是與第1主面102a相反的背面。半導體晶粒102包含矽等的半導體材料。
電極墊104與形成於第1主面101a上的電極墊107電性連接。凸塊電極106設置於電極墊104上。保護膜108設置於多個凸塊電極106的周圍。換言之，電極墊104的外周端部由保護膜108所包覆。另一方面，電極墊104的中央部從保護膜108暴露出來。該暴露出來的部分為與凸塊電極106的電性連接部。作為電極墊104及凸塊電極106的材質，例示為具有導電性的材 料。例如，電極墊104可包含鋁或銅等。另外，例如，凸塊電極106可包含金等。
繼而，對接合裝置1進行說明。如圖1所示，接合裝置1具有：晶圓平台2、中間平台3、接合平台4、接合單元6、XY平台7、接合控制部(以下，簡稱為「控制部8」)、及攝像部9。
晶圓平台2暫時載置晶圓110。於晶圓平台2的搭載面2a上，藉由黏著膜(未圖示)來固定晶圓110。該晶圓110包含：經單片化的多個半導體晶粒102。晶圓110具有：第1主面110a與第2主面110b。第1主面110a具有規定的電路圖案，並對應於半導體晶粒102的第1主面102a。第2主面110b是與第1主面110a相反的背面，並對應於半導體晶粒102的第2主面102b。
中間平台3暫時載置半導體晶粒102。於中間平台3的載置面3a上，藉由黏著膜(未圖示)來固定半導體晶粒102。中間平台3配置在晶圓平台2與接合平台4之間。中間平台3以藉由線性馬達(未圖示)等驅動機構而可於X軸方向及Y軸方向上移動的方式構成。
於使半導體晶粒102自晶圓平台2朝接合平台4移動的步驟中，首先，自晶圓平台2拾取(pickup)半導體晶粒102。繼而，使半導體晶粒102的上下反轉。即，最初第1主面102a為上側，第2主面102b為下側，但藉由上下反轉，第2主面102b為上側而變成第1主面102a。於該狀態下，將半導體晶粒102載置於中間平台3上。因此，載置於中間平台3上的半導體晶粒102 的第1主面102a與中間平台3的載置面3a對向。
接合平台4暫時載置接合中的基板101。於接合平台4的搭載面4a上，藉由黏著膜(未圖示)來固定基板101。此時，基板101的第1主面101a與接合平台4的搭載面4a對向。接合平台4以藉由包含導軌的驅動機構(未圖示)而可使基板101於X軸方向上移動的方式構成。另外，接合平台4具有：用以對半導體晶粒102及基板101進行加熱的加熱器。
接合單元6具有：接合頭11(底座)、接合工具12、Z軸驅動機構13、及攝像部14。接合頭11安裝於XY平台7上，可於X軸方向及Y軸方向上移動。接合工具12經由Z軸驅動機構13而安裝於接合頭11上。Z軸驅動機構13使接合工具12於正或負的Z軸方向上移動。進而，Z軸驅動機構13使接合工具12繞著Z軸(繞著接合面21S的法線方向)轉動。另外，攝像部14亦安裝於接合頭11上。即，若藉由XY平台7來使接合頭11移動，則安裝於接合頭11上的接合工具12及攝像部14亦同樣地移動。
攝像部14於Y軸方向上與接合工具12僅相隔規定距離。攝像部14對載置於中間平台3上的半導體晶粒102的第2主面102b進行攝像。另外，攝像部14對載置於接合平台4上的半導體晶粒102的第2主面102b進行攝像。再者，攝像部14亦可不固定於接合頭11上。攝像部14亦可以與接合工具12分開來進行移動。
接合工具12具有接合面21S。接合面21S保持半導體 晶粒102。接合面21S是沿著Z軸方向延伸的接合工具12之中，接合平台4側的下端面。另外，接合工具12具有：空氣真空(air vacuum)功能及/或送風(air blow)功能。藉由這些功能，接合工具12可吸附半導體晶粒102或使半導體晶粒102脫離。於本實施形態中，藉由接合工具12而隔著膜200來保持半導體晶粒102。再者，接合工具12的構成將如後所述。
然而，膜200具有：多個孔，用以在一側的主面與另一側的主面之間進行通氣。為了吸附半導體晶粒102等的電子零件，膜200的格利值(gurley value)的值越小越好。膜200的格利值例如為1~2(s/100cc/in2)。
另外，膜200比作為接合對象的半導體晶粒102的半導體材料還柔軟。另外，膜200比構成接合面21S的材料還柔軟。此處所述的「柔軟」例如是指：膜200的剛性比半導體晶粒102的剛性還低。作為膜200，例如，可列舉不織布膜。
膜200的材質並無特別限定，作為一個例子，可採用四氟乙烯樹脂(聚四氟乙烯(Polytetrafluoroethylene，PTFE))或聚醯亞胺。例如，當將四氟乙烯樹脂用作膜200時，四氟乙烯樹脂亦可為PTFE奈米纖維。亦可使用具有約1μm以上、2μm以下的孔徑，具有約56μm的厚度，格利值具有1.2(s/100cc/in2)的PTFE奈米纖維。PTFE奈米纖維雖然厚，但可減小格利值(即提昇透氣性)。
控制部8對於接合裝置1的構成零件的動作進行控制。 具體而言，控制部8以與接合單元6、XY平台7、攝像部9、攝像部14等的各構成之間可進行信號的收發的方式連接，藉此控制這些構成的動作。例如，控制部8為具備中央處理單元(Central Processing Unit，CPU)及記憶體等的電腦裝置。於記憶體中事先儲存用以進行接合中所需的處理的接合程式等。控制部8以可執行後述的與本實施形態的半導體晶粒的接合方法相關的各步驟的方式構成。控制部8與用以輸入控制資訊的操作部8a、及用以輸出控制資訊的顯示部8b連接。
控制部8進行接合單元6的位置控制(XYZ軸)、接合工具12的位置控制(Z軸)、接合工具12的繞著Z軸的位置控制(θ)、接合工具12的傾斜控制(相對於Z軸的傾斜)。進而，控制部8進行空氣真空功能及/或送風功能的開啟或關閉控制，朝基板101上安裝半導體晶粒102時的負荷控制、接合平台4及接合工具12的熱供給控制等。進而，控制部8對於後述的接合工具12所具有的加熱器22、膜搬送機構30及膜剝離機構40的動作進行控制。
以下，一面參照圖3，一面進一步對接合工具12進行詳細說明。如圖3所示，接合工具12具有：接合機構20(接合部)、膜搬送機構30(膜供給部)、及膜剝離機構40(膜剝離部)。
接合機構20具有：本體21與加熱器22(加熱部)。本體21具有：基礎區塊21a、接合區塊21b、及接合面21S。四角柱狀的基礎區塊21a的上端與Z軸驅動機構13連結。於基礎區塊21a 的下端，安裝了接合區塊21b。再者，基礎區塊21a亦可為圓柱狀。接合區塊21b具有接合面21S。接合面21S為接合區塊21b的下端面。接合面21S經由膜200而可裝卸地保持半導體晶粒102。該半導體晶粒102的裝卸是藉由多個吸引孔(未圖示)來進行。吸引孔的上端與泵(未圖示)等的氣壓系統(pneumatic pressure system)連接。吸引孔的下端於接合面21S上形成開口。
加熱器22配置於本體21的內部。加熱器22對半導體晶粒102進行加熱。另外，亦可設為加熱器22對基板101進行加熱。加熱器22對應於自控制部8所接收的控制信號，而對加熱動作的開始與停止進行切換。
膜搬送機構30朝接合面21S搬送膜200。另外，膜搬送機構30自接合面21S回收膜200。膜搬送機構30配置於比接合面21S更上方。膜搬送機構30具有：供給單元31與回收單元32。供給單元31及回收單元32以夾持接合機構20的方式而配置。而且，自供給單元31捲出的膜200，是經由接合面21S而捲繞於回收單元32上。
供給單元31具有：供給本體33、供給捲盤34(一側的捲盤)、以及供給銷35A、供給銷35B。供給本體33固定於基礎區塊21a上，以保持供給捲盤34、供給銷35A、供給銷35B的相對的位置。
膜200的一端部安裝於供給捲盤34上。供給捲盤34以相對於供給本體33可轉動的方式設置。供給捲盤34藉由馬達(未 圖示)來控制旋轉角度。藉由該角度控制，來進行膜200的捲出、或作用於膜200上的張力(tension)的控制。供給捲盤34與後述的回收捲盤37一同構成一對捲盤。
供給銷35A、供給銷35B處於供給捲盤34的下方，且設置於接合機構20的附近。圓柱狀的供給銷35A、供給銷35B的基端固定於膜剝離機構40的蓋41上，前端於+X軸方向上延長。供給銷35A、供給銷35B將自供給捲盤34捲出的膜200引導至接合面21S為止。配置於接合機構20側的供給銷35B的外周下表面位於比接合面21S略上方。
膜剝離機構40於供給本體33中設置於接合機構20的附近。膜剝離機構40的詳細情況，將如後所述。
回收單元32具有：回收本體36、回收捲盤37(另一側的捲盤)、以及回收銷38A、回收銷38B。即，回收單元32除了不具有膜剝離機構40以外，具有與供給單元31大致相同的構成。
膜200的另一端部安裝於回收捲盤37上。回收捲盤37以相對於回收本體36可轉動的方式設置。回收捲盤37藉由馬達來控制旋轉角度。藉由該角度控制，來進行膜200的捲繞、或作用於膜200上的張力的控制。
回收銷38A、回收銷38B處於回收捲盤37的下方，且設置於接合機構20的附近。圓柱狀的回收銷38A、回收銷38B的基端固定於回收本體36上，前端於+X軸方向上延長。回收銷38A、回收銷38B將自回收捲盤37捲出的膜200引導至接合面21S 為止。
進而，對膜剝離機構40進行詳細說明。如圖4所示，膜剝離機構40具有：蓋41、臂體42、剝離桿43(剝離構件)、致動器44、及連桿機構45。再者，於圖4中，為了明確顯示連桿機構45的構成，而顯示了卸除蓋41時的結構。於圖4中，蓋41是由雙點劃線來表示。膜剝離機構40的藉由致動器44來提供驅動力的連桿機構45，使臂體42沿著規定的軌跡往返移動。於臂體42的前端設置剝離桿43。藉由臂體42沿著規定的軌跡移動，剝離桿43對於黏附在接合面21S上的膜200進行剝離的動作。
蓋41為板狀的構件，基端是固定於供給本體33上。
臂體42為板狀的構件，於靠近接合機構20的前端固定剝離桿43的基端。臂體42為連桿機構45的一部分，可相對於供給本體33及蓋41而變更相對的位置。即，藉由臂體42移動，剝離桿43以描繪規定的軌跡的方式移動。
致動器44是所謂的驅動源，作為一個例子，致動器44為氣缸。致動器本體44a可轉動地與供給本體33連結。致動器44的驅動桿44b藉由連結部42a而可轉動地與臂體42連結。致動器44與連桿機構45協動，來構成驅動部50。
連桿機構45使剝離桿43沿著規定的軌跡移動。連桿機構45是所謂的四節連桿，包含：第1連桿46、第2連桿47、臂體42及蓋41。第1連桿46及第2連桿47的各自的一端，作為驅動節46b、驅動節47b而與臂體42連結。該驅動節46b、驅動節 47b的位置相對於供給本體33而可相對地移動。第1連桿46及第2連桿47的各自的另一端，作為固定節46a、固定節47a而與蓋41連結。該固定節46a、固定節47a的位置相對於供給本體33而不相對地移動。即，第1連桿46以將固定節46a作為中心軸且驅動節46b追隨(follow)圓弧狀的軌跡的方式轉動。同樣地，第2連桿47以將固定節47a作為中心軸且驅動節47b追隨圓弧狀的軌跡的方式轉動。
根據此種構成，若致動器44的驅動桿44b伸縮，則連結驅動桿44b的前端的臂體42得到驅動。於臂體42上連結有第1連桿46及第2連桿47的各自的驅動節46b、驅動節47b。因此，連結第1連桿46及第2連桿47的驅動節46b、驅動節47b的臂體42為驅動連桿。臂體42的移動軌跡是由第1連桿46及第2連桿47的另一端相對於蓋41進行轉動的動作來規定。
進而，一面參照圖4、圖5、圖6及圖7，一面對膜剝離機構40的動作進行說明。
圖4表示第1形態時的膜剝離機構40。所謂第1形態，是指：剝離桿43未接觸膜200的狀態。因此，第1形態可於未進行膜200的剝離動作的狀態下取得。例如，第1形態可於藉由接合機構20來保持半導體晶粒102的期間內取得。
於第1形態中，剝離桿43配置在供給捲盤34與接合機構20之間。另外，剝離桿43配置於比接合面21S更上方。更詳細而言，剝離桿43配置於比將供給銷35B與接合面21S連結的假 想線L1更上方。該形態可藉由致動器44使驅動桿44b變短來獲得。
圖5表示自第1形態朝第2形態的過渡剛完成後時的膜剝離機構40。所謂第2形態，是指：正進行自接合面21S上剝離膜200的動作的狀態。即，圖5中所示的自第1形態朝第2形態的過渡剛完成後，亦可稱為即將開始剝離膜200的動作前的狀態。
當自第1形態朝第2形態切換時，首先，使剝離桿43自比接合面21S更上方朝比接合面21S更下方移動，直至剝離桿43接觸膜200為止。該移動只要具有上下方向的移動成分C1即可，除了上下方向的移動成分C1以外，亦可為所述移動成分C1與朝左右方向(即，靠近接合機構20的方向)的移動成分C2的合成CA。因此，亦可為使剝離桿43朝斜下方向移動的構成。
剝離桿43剛接觸膜200後，剝離桿43仍然位於比接合面21S更上方。因此，一面藉由剝離桿43來向下按壓膜200，一面進一步使剝離桿43朝比接合面21S更下方移動。剝離桿43移動到至少剝離桿43的外周面上的最高的位置位於比接合面21S更下方為止。換言之，剝離桿43移動至在剝離桿43的外周面上的最高的位置與接合面21S之間形成間隙D的程度為止。
此種剝離桿43的移動，是藉由致動器44及連桿機構45的協動來實現。具體而言，致動器44使驅動桿44b的突出長度變長。於是，臂體42沿著突出方向A1受到按壓。此時，產生對應於臂體42中的驅動桿44b的連結部42a與第1連桿46及第2連 桿47的固定節46a、固定節47a之間的距離的扭矩。該扭矩使第1連桿46及第2連桿47的各自的驅動節46b、驅動節47b，以固定節46a、固定節47a為旋轉中心而於逆時針方向上旋轉。藉由該第1連桿46及第2連桿47的各自的一端的移動，來限制臂體42的移動軌跡。若第1連桿46及第2連桿47的各自的一端於逆時針方向上旋轉，則各自的一端朝下方移動，並且靠近接合機構20。因此，臂體42亦仿照第1連桿46及第2連桿47的各自的一端的動作而朝下方移動，並且以靠近接合機構20的方式移動。進而，固定於臂體42的前端的剝離桿43亦朝下方移動(移動成分C1)，並且以靠近接合機構20的方式移動(移動成分C2)。於朝該第2形態的過渡剛完成後，第1連桿46及第2連桿47處於下死點UD的跟前。
圖6表示第2形態正在進行時的膜剝離機構40，圖7表示膜自接合面21S上完全地剝落時的膜剝離機構40。所謂第2形態正在進行，是指：藉由剝離桿43於膜200的延長方向上移動，而自接合面21S上剝離膜200的動作。此處所述的膜200的延長方向是指：沿著左右方向的方向，但不需要相對於左右方向嚴格的一致。
剝離桿43以與接合面21S之間至少確保間隙D的狀態，而朝右方向A2移動。於是，膜200的一部分200a變成掛在剝離桿43上的狀態。若保持該狀態而使剝離桿43進一步朝右方向A2移動，則膜200變成被自接合面21S朝斜下方向A3剝下的 狀態。即，於正在剝離膜200的狀態下，可能存在如下的情況：在剝離桿43與接合面21S之間，存在黏附於接合面21S上的膜200的一部分、及剛自接合面21S上剝離後的膜200的一部分。
此種剝離桿43的移動，是藉由致動器44及連桿機構45的協動來實現。具體而言，致動器44使驅動桿44b的突出長度進一步變長。於朝第2形態的過渡剛完成後，第1連桿46及第2連桿47處於下死點UD的跟前(參照圖5的軌跡T1及軌跡T2)。於第2形態中，第1連桿46及第2連桿47進一步於逆時針方向上旋轉。於是，第1連桿46及第2連桿47的一端通過下死點UD(參照圖7的軌跡T1及軌跡T2)。於該下死點UD的附近的移動過程中，第1連桿46及第2連桿47的驅動節46b、驅動節47b中的朝上下方向的移動量微小。因此，第1連桿46及第2連桿47的驅動節46b、驅動節47b的移動可看作朝右方向的移動，因此，可使剝離桿43大概於膜200的延伸方向(沿著接合面21S的方向)上移動。
如圖7所示，當剝離桿43位於比接合面21S的中心線L2更靠近右側(回收捲盤37側)時，存在：膜200自接合面21S全部剝落的情況。
再者，剝離桿43的最終的到達位置可為事先決定的位置，亦可設為膜200自接合面21S全部剝落時的位置。於本實施形態中，將膜200自接合面21S全部剝落時的位置設為最終的到達位置。於此情況下，需要對膜200自接合面21S全部剝落進行 探測的構成。以下，對探測膜200的剝落的構成的例子進行說明。
膜200的剝落的探測，是藉由利用控制部8控制供給捲盤34及回收捲盤37來進行。首先，於第1形態中，控制部8使供給捲盤34於捲出方向上轉動。藉由該轉動，於自供給捲盤34至接合機構20之間的膜200中產生鬆弛部分。繼而，於第1形態中，控制部8使回收捲盤37於捲繞方向上轉動。此處，於膜200未黏附於接合面21S上的情況下，回收捲盤37對膜200僅捲繞膜200所具有的鬆弛的部分。因此，於回收捲盤37中，在捲繞鬆弛部分的期間內不產生負荷扭矩，於捲繞鬆弛部分後產生負荷扭矩。當探測到此種扭矩的變化時，可知：膜200未黏附於接合面21S上。
另一方面，當膜200黏附於接合面21S上時，即便使回收捲盤37轉動，亦不捲繞鬆弛部分。因此，於回收捲盤37的轉動後，可立即產生負荷扭矩。當探測到此種扭矩時，可知：膜200黏附於接合面21S上。
而且，於回收捲盤37中產生了負荷扭矩的狀態，是在接合面21S與回收捲盤37之間的膜200中產生了張力的狀態。於此種狀態下，進行所述剝離動作。而且，於膜200自接合面21S全部剝落的瞬間，張力被解除，回收捲盤37於捲繞方向上略微轉動。因此，當探測到該轉動時，可看作：膜200已自接合面21S剝落。
進而，張力被解除的膜200有時亦具有鬆弛部分。因此， 使回收捲盤37進而於捲繞方向上略微轉動。於是，於回收捲盤37中，在捲繞鬆弛部分的期間內不產生負荷扭矩，於捲繞鬆弛部分後產生負荷扭矩。藉由探測此種扭矩變化，可確實地探測膜200已剝落。
<接合方法>
繼而，一面參照圖8，一面對利用接合裝置1的接合方法進行說明。本實施形態的接合方法，使用圖1中所示的接合裝置1來進行。藉由本實施形態的接合方法，來製造半導體裝置100(參照圖2)。
首先，於晶圓平台2上，準備變成單片的多個半導體晶粒102(S1)。具體而言，於晶圓平台2上，準備晶圓110，所述晶圓110包含黏著於膜上的多個半導體晶粒102。晶圓110的多個半導體晶粒102的每一個，是以第1主面102a朝向上方、且第2主面102b與晶圓平台2對向的方向，而配置於晶圓平台2上。
繼而，將半導體晶粒102移送至中間平台3上(S2)。例如，藉由吸附工具及拾取單元(均未圖示)的協調動作，將晶圓平台2上的多個半導體晶粒102一個一個地移送至中間平台3。
繼而，將膜200安裝於接合面21S上(S3)。然後，於所安裝的膜200上，形成吸附用的細孔(S4)。
繼而，吸附半導體晶粒102(S5)。首先，控制部8控制XY平台7，使接合機構20朝中間平台3上移動。繼而，控制部8控制Z軸驅動機構13，使接合機構20朝負的Z軸方向移動。當 半導體晶粒102的第2主面102b接觸到接合面21S上的膜200時，控制部8使移動停止。繼而，控制部8控制氣壓系統，利用吸引孔而開始進行吸引。藉由該吸引，而使半導體晶粒102吸附於接合機構20上。然後，控制部8控制Z軸驅動機構13，使接合機構20朝正的Z軸方向移動。
繼而，藉由接合機構20並經由接著構件103，而將半導體晶粒102熱壓接於基板101上(S6)。
具體而言，首先，控制部8控制XY平台7，使接合機構20朝基板101上移動(S6a)。即，使吸附有半導體晶粒102的接合機構20朝接合平台4上移動。於接合平台4上配置有基板101，於基板101的搭載半導體晶粒102的區域中配置接著構件103。接著構件103於常溫下為漿狀。
繼而，控制部8利用攝像部14等，來檢測基板101的位置(S6b)。繼而，控制部8控制供給捲盤34及/或回收捲盤37，解除膜200中的張力(S6c)。繼而，進行半導體晶粒102與基板101的最終的對位(S6d)。此時，半導體晶粒102經由膜200而保持於接合機構20上。而且，於步驟S6c中，膜200中的張力得到緩和，因此，可伴隨接合機構20的動作而使半導體晶粒102移動。具體而言，為了調整相對於基板101的半導體晶粒102的繞著Z軸的位置，而使接合機構20繞著Z軸略微轉動。於此情況下，膜200中的張力得到緩和，藉此半導體晶粒102亦伴隨接合機構20的動作而繞著Z軸旋轉。
繼而，控制部8控制供給捲盤34及/或回收捲盤37，對膜200賦予張力(S6e)。
繼而，控制部8將半導體晶粒102熱壓接於基板101上(S6f)。控制部8將控制信號發送至Z軸驅動機構13中，藉此使接合機構20朝接合平台4下降。該下降動作持續至凸塊電極106接觸基板101的第1主面101a為止。控制部8若探測到凸塊電極106對於基板101的接觸，則使下降動作停止。另外，控制部8將控制信號發送至加熱器22(熱源)中，藉此開始加熱。該加熱動作可於進行下降動作的期間內開始，亦可於下降動作結束後開始。根據該下降動作與加熱動作，經由藉由下降動作而接觸接著構件103的半導體晶粒102，使熱自接合面21S朝接著構件103傳導。藉由該熱，接著構件103硬化。
再者，接著材料亦可為於常溫下具有膜狀的形狀。該膜狀的接著材料因受熱而軟化。因此，控制部8使下降動作與加熱動作同時進行，藉此使膜狀的接著材料軟化並朝下方按壓半導體晶粒102，而使凸塊電極106接觸基板101。然後，控制部8使加熱動作停止。其結果是，膜狀的接著材料的溫度上升，因此，接著材料硬化。藉由該硬化，而將半導體晶粒102固定於基板101。
如此，在謀求半導體晶粒102的凸塊電極106與基板101的配線(未圖示)的電性接合的同時，可對半導體晶粒102與基板101之間進行樹脂密封。再者，接著構件103並不限定於在接合前事先設置於基板101上的形態，亦可作為底部填充劑 (underfill)而於接合步驟中填充至半導體晶粒102與基板101之間。
於半導體晶粒102朝向基板101的熱壓接結束後，使半導體晶粒102自接合面21S脫離(S6g)。使吸引孔的吸引動作變成關閉狀態。之後，控制部8控制Z軸驅動機構13，使接合機構20朝正的Z軸方向移動。根據這些動作，可於束縛膜200的狀態下，僅使半導體晶粒102自接合面21S脫離。
然後，實施自接合機構20剝離膜200的步驟(S7)。首先，控制部8進行膜200是否黏附於接合面21S上的確認(S7a)。膜200對於接合面21S的黏附，可能存在膜200黏附於接合面21S的整個面上的情況，亦可能存在膜200黏附於接合面21S的一部分上的情況。如上所述，該確認是藉由控制部8控制供給捲盤34與回收捲盤37來進行。繼而，於未探測到黏附的情況下，再次自步驟S1起依次實施。另一方面，於探測到黏附的情況下，進行剝離動作。首先，為了探測膜200已藉由剝離動作而剝落，控制部8控制供給捲盤34及回收捲盤37，使供給捲盤34側的膜200鬆弛且對回收捲盤37側的膜200施加張力(S7b：第1動作)。然後，控制部8控制致動器44，進行剝離動作(S7c：第2動作)。而且，於剝離動作完成後，再次進行膜200是否黏附於接合面21S上的確認(S7a)。而且，於未探測到黏附的情況下，再次自步驟S1起依次實施。於探測到黏附的情況下，再次進行步驟S7b。
繼而，對接合裝置1及接合方法的作用效果進行說明。
於接合方法及接合裝置1中，接合機構20經由被供給至接合面21S上的膜200來保持半導體晶粒102。而且，接合機構20自加熱器22朝接合面21S提供熱，將所保持的半導體晶粒102經由接著材料而熱壓接於基板101。於是，即便產生了接著材料的上爬，因接合面21S由膜200覆蓋，故亦可保護接合面21S遠離上爬的接著材料。進而，當提供了用於熱壓接的熱時，該熱經由接合面21S與膜200而朝半導體晶粒102移動。於是，可能產生膜200因該熱而黏附於接合面21S上的情況。因此，接合裝置1使剝離桿43進入膜200與接合面21S之間，藉此剝離黏附於接合面21S上的膜200。因此，接合裝置1可保護接合面21S遠離接著材料，並消除膜200對於接合面21S的黏附。因此，為了防止上爬而使用膜200的接合裝置1，可抑制生產性下降。
然而，作為消除膜200對於接合面21S的黏附的構成，亦可能存在：變更了接合機構20與膜搬送機構30的上下方向上的相對的位置的情況。例如，亦可於保持接合機構20的位置的狀態下，使膜搬送機構30的整體朝下方下降。但是，於此種構成中，需要用以使接合機構20及膜搬送機構30移動的構成。另外，於設為可移動的構成的情況下，存在剛性下降的傾向，因此，有可能對接合的精度造成影響。
另一方面，接合裝置1不使接合機構20及膜搬送機構30移動，而藉由剝離桿43來消除膜200的黏附。因此，不需要用以使接合機構20及膜搬送機構30移動的構成，可確保所期望的 剛性。
另外，膜剝離機構40是由一個致動器44來供給驅動力，並藉由連桿機構45來實現剝離桿43的軌跡。因此，可減少驅動軸而使驅動機構的構成單純化，進而，可藉由簡單的構成來實現複雜的軌跡控制。
另外，膜搬送機構30具有：供給捲盤34及回收捲盤37，夾持了接合機構20，且配置於比接合面21S更上方。自供給捲盤34供給的膜200經由接合面21S而捲繞於回收捲盤37上。進而，膜剝離機構40具有：驅動剝離桿43的致動器44及連桿機構45。而且，驅動部50將第1形態與第2形態相互切換，所述第1形態將剝離桿43配置在供給捲盤34與接合機構20之間、且比接合面21S更上方，所述第2形態使剝離桿43於接合面21S的下方，一面接觸膜200一面朝膜200的延伸方向移動。根據該構成，由於使剝離桿43於接合面21S的下方朝膜200的延伸方向移動，所以，可一面朝斜下方向對黏附於接合面21S上的膜200進行拉伸，一面將膜200剝下。因此，可確實地自接合面21S剝離膜200。
另外，驅動部50於自第1形態朝第2形態切換時，使剝離桿43自比接合面21S更上方朝比接合面21S更下方移動直至接觸膜200為止，於使剝離桿43接觸膜200後，一面向下按壓膜200，一面進一步使剝離桿43朝比接合面21S更下方移動。根據該構成，可使剝離桿43確實地朝比接合面21S更下方移動，並以在剝離桿43與接合面21S之間確保間隙D的狀態進行剝離動作。
另外，進而具備控制部8，對於供給捲盤34、回收捲盤37及驅動部50的動作進行控制。於第1形態時，控制部8以於自供給捲盤34伸展至接合面21S上的膜200的部分中不產生張力的方式，來控制供給捲盤34。進而，控制部8進行第1動作，以於自接合面21S伸展至回收捲盤37上的膜200的部分中產生張力的方式，來控制回收捲盤37。另外，於第1動作後，控制部8進行第2動作，以自第1形態朝第2形態切換的方式，來控制驅動部50。根據該構成，藉由供給捲盤34，而於膜200中產生鬆弛。而且，當對回收捲盤37進行了驅動時，若可回收該鬆弛部分，則表示在供給捲盤34與回收捲盤37之間不存在黏附於其他構件上的部分。因此，可探測有無對於接合面21S的黏附。進而，實施剝離動作，於膜200自接合面21S剝落的瞬間，藉由回收捲盤37來回收鬆弛部分。因此，可確實地探測膜200已自接合面21S剝落。
另外，進而具備：安裝了接合機構20及膜搬送機構30，並且可繞著接合面的法線方向轉動的接合頭11。根據該構成，可相對於基板101，來修正由接合機構20所保持的半導體晶粒102的姿勢。
以上，根據實施形態，對於本發明進行了詳細說明。但是，本發明並不限定於所述實施形態。本發明可於不脫離其主旨的範圍內，進行各種變形。
於所述實施形態中，對不具有透氣孔的膜實施開孔處理，藉此確保透氣性。例如，膜亦可為自最初起便具有透氣性。 例如，可使用由多孔質片材或不織布形成的膜。於此情況下，於接合方法中，不需要於膜中形成細孔的步驟(S4)。而且，接合裝置不需要於膜中形成細孔的機構。因此，可使接合裝置的構成變得簡易，並且可減少接合方法的步驟數。
於所述實施形態中，作為膜剝離機構40的驅動源，例示了氣缸，但並不限定於此。例如，作為驅動源，亦可使用產生旋轉扭矩的馬達。
12‧‧‧接合工具
20‧‧‧接合機構
21‧‧‧本體
21a‧‧‧基礎區塊
21b‧‧‧接合區塊
21S‧‧‧接合面
22‧‧‧加熱器
30‧‧‧膜搬送機構
31‧‧‧供給單元
32‧‧‧回收單元
33‧‧‧供給本體
34‧‧‧供給捲盤
35A、35B‧‧‧供給銷
36‧‧‧回收本體
37‧‧‧回收捲盤
38A、38B‧‧‧回收銷
40‧‧‧膜剝離機構
41‧‧‧蓋
43‧‧‧剝離桿
200‧‧‧膜
X、Y、Z‧‧‧軸

Claims (6)

  1. 一種接合裝置，將電子零件安裝於基板或其他電子零件上，其特徵在於，包括： 接合部，具有：接合面，經由膜而能夠裝卸地保持所述電子零件，及熱源，朝所述接合面供給熱； 膜供給部，沿著所述接合面而供給所述膜； 剝離構件，能夠進入所述膜與所述接合面之間；以及 驅動部，使所述剝離構件在所述膜與所述接合面之間移動，來使所述膜自所述接合面分離。
  2. 如申請專利範圍第1項所述的接合裝置，其中，所述膜供給部包括：一對捲盤，夾持所述接合部且對所述膜賦予張力， 自一側的所述捲盤所供給的所述膜，經由所述接合面而捲繞於另一側的所述捲盤， 所述驅動部將第1形態與第2形態相互切換， 所述第1形態將所述剝離構件配置在一側的所述捲盤與所述接合部之間、或另一側的所述捲盤與所述接合部之間，且比所述接合面更上方， 所述第2形態使所述剝離構件於所述接合面的下方，一面接觸所述膜，一面朝所述膜的延伸方向移動。
  3. 如申請專利範圍第2項所述的接合裝置，其中， 所述驅動部於自所述第1形態朝所述第2形態切換時，使所述剝離構件自比所述接合面更上方朝比所述接合面更下方移動直至接觸所述膜為止，於使所述剝離構件接觸所述膜後，一面向下按壓所述膜，一面進一步使所述剝離構件朝比所述接合面更下方移動。
  4. 如申請專利範圍第3項所述的接合裝置，更包括： 控制部，控制一對所述捲盤及所述驅動部的動作， 於所述第1形態時，所述控制部進行第1動作與第2動作， 所述第1動作以於自一側的所述捲盤伸展至所述接合面的所述膜的部分中不產生張力的方式控制一側的所述捲盤，並且以於自所述接合面伸展至另一側的所述捲盤上的所述膜的部分中產生張力的方式控制另一側的所述捲盤， 所述第2動作於所述第1動作後，以自所述第1形態朝所述第2形態切換的方式控制所述驅動部。
  5. 如申請專利範圍第1項至第4項中任一項所述的接合裝置，更包括： 底座，安裝了所述接合部及所述膜供給部，並且能夠繞著所述接合面的法線方向轉動。
  6. 一種接合方法，將電子零件安裝於基板或其他電子零件上，其特徵在於，包括： 自膜供給部朝能夠裝卸地保持所述電子零件的接合部的接合面供給膜後，經由所述膜而將所述電子零件保持於所述接合面的步驟； 將保持於所述接合面的所述電子零件，安裝於所述基板或其他所述電子零件的步驟；以及 使驅動能夠進入所述膜與所述接合面之間的剝離構件的驅動部動作，而使所述剝離構件進入所述膜與所述接合面之間，以使所述膜自所述接合面分離的步驟。
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