TWI664682B - 晶片之安裝方法 - Google Patents

晶片之安裝方法 Download PDF

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Publication number
TWI664682B
TWI664682B TW106117403A TW106117403A TWI664682B TW I664682 B TWI664682 B TW I664682B TW 106117403 A TW106117403 A TW 106117403A TW 106117403 A TW106117403 A TW 106117403A TW I664682 B TWI664682 B TW I664682B
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Taiwan
Prior art keywords
wafer
porous sheet
bump
vacuum suction
tool
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TW106117403A
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English (en)
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TW201810447A (zh
Inventor
渡辺治
中村智宣
萩原美仁
金井裕司
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日商新川股份有限公司
日商華爾卡股份有限公司
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Publication of TW201810447A publication Critical patent/TW201810447A/zh
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Publication of TWI664682B publication Critical patent/TWI664682B/zh

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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

本發明之課題在於謀求真空吸附之穩定化及維護性之改善。
本發明之晶片之安裝方法包含如下步驟：準備具有形成有複數個凸塊電極106之凸塊形成面102a的晶片100；將具有吸附面24之真空吸附工具22以吸附面24與凸塊形成面102a對向之方向配置於晶片100之上方；於吸附面24與凸塊形成面102a之間夾持多孔質性片材44，藉由真空吸附工具22吸附晶片100；以及將藉由真空吸附工具22所吸附之晶片100經由接著材料114安裝於基板110之接合區域。

Description

晶片之安裝方法
本發明係關於一種晶片之安裝方法。
已知有一種藉由真空吸附拾取藉由切割而單片化之複數個晶片之技術(參照專利文獻1及2)。例如，於專利文獻2中，揭示有將於端子上設置有凸塊之裸晶於包含該端子及凸塊之裸晶之與電路功能面相反之面側進行真空吸附。被工具真空吸附之裸晶係以使電路功能面與基板對向之方向搭載於塗佈有接著劑之基板上。於專利文獻2之發明中，為了防止因真空吸附或工具之加壓等導致基板上之接著劑自裸晶之側面向上方爬升，而採用在工具之吸附面與裸晶之間介置片材之構成，藉此，抑制接著劑之爬升，從而防止接著劑附著於工具。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特開2006-66625號公報
[專利文獻2]日本第5669137號公報
此處，專利文獻2之發明係以於電路功能面真空吸附裸晶為前提者，對於在形成有凸塊電極之凸塊形成面側進行真空吸附並未做任何考慮。於該方面，在凸塊形成面，由於因凸塊電極而設置有凹凸，故而於使工具真空吸附晶片之情形時，因凸塊電極之突起高度而導致工具吸附面與晶片之間可能產生空隙。因此，於真空吸附有晶片之情形時，存在如下情形：發生空氣之洩漏，而使真空等級降低，由此導致工具之吸附性惡化。
又，於將晶片經由接著材料安裝於基板之情形時，存在如下情形：自接著材料產生煙霧氣體，該煙霧氣體自因凸塊電極之突起高度而產生之空隙流入，從而工具等受到污染。因此，存在必須頻繁地清洗工具等而使維護性惡化之情形。
本發明係鑒於此種情況而完成者，目的在於謀求真空吸附之穩定化及維護性之改善。
本發明之一態樣之晶片之安裝方法包含如下步驟：準備具有形成有複數個凸塊電極之凸塊形成面的晶片；將具有吸附面之真空吸附工具以吸附面與凸塊形成面對向之方向配置於晶片之上方；於吸附面與凸塊形成面之間夾持多孔質性片材，藉由真空吸附工具吸附晶片；以及將藉由真空吸附工具所吸附之晶片經由接著材料安裝於基板之接合區域。
根據上述構成，可於將晶片安裝於基板之接合區域時在真空吸附工具之吸附面與晶片之凸塊形成面之間之空隙設置多孔質性片材。藉此，可防止空氣自空隙洩漏，故而可維持晶片之吸附力。又，藉由在該空 隙中設置多孔質性片材，可抑制自接著材料產生之氣體等無用物質之抽吸。因此，可抑制真空吸附工具受到污染，從而能夠謀求維護性之提高。
於上述晶片之安裝方法中，多孔質性片材亦可具有凸塊形成面上之凸塊電極之突起高度以上之厚度，亦可為由較凸塊電極或吸附面柔軟之材質所構成者。
於上述晶片之安裝方法中，多孔質性片材亦可為由不織布所構成者。
於上述晶片之安裝方法中，吸附面亦可具有較凸塊形成面大之尺寸。
於上述晶片之安裝方法中，亦可為，安裝之步驟係藉由利用真空吸附工具對晶片及接著材料進行加熱而將晶片安裝於基板之接合區域者，且多孔質性片材成為抑制於對晶片或接著材料進行加熱時所產生之煙霧氣體侵入至真空吸附工具之抽吸孔的過濾器者。
於上述晶片之安裝方法中，多孔質性片材亦可自配置於真空吸附工具之左右之一對捲盤供給。
根據本發明，可謀求真空吸附之穩定化及維護性之改善。
22‧‧‧真空吸附工具
24‧‧‧吸附面
44‧‧‧多孔質性片材
100‧‧‧晶片
102a‧‧‧第1面
102b‧‧‧第2面
106‧‧‧凸塊電極
110‧‧‧基板
114‧‧‧接著材料
圖1係表示本發明之實施形態的晶片之安裝方法中所使用之接合裝置的圖。
圖2係表示本發明之實施形態的晶片之安裝方法之流程圖的圖。
圖3係用以說明本發明之實施形態的晶片之安裝方法的圖，具體而言係表示將工具配置於晶片之上方之步驟的圖。
圖4係用以說明本發明之實施形態的晶片之安裝方法的圖，具體而言係表示將吸附於工具之晶片經由接著材料安裝於基板之步驟的圖。
圖5係用以說明本發明之實施形態的晶片之安裝方法的圖，具體而言係表示工具之吸附面與晶片之凸塊形成面之大小關係的俯視圖。
以下，對本發明之實施形態進行說明。於以下之圖式之記載中，相同或類似之構成要素係以相同或類似之符號表示。圖式為例示，各部分之尺寸或形狀為示意性者，不應將本案發明之技術範圍限定於該實施形態而進行解釋。
圖1係表示本發明之實施形態的晶片之安裝方法中所使用之接合裝置10之概略的圖。接合裝置10係用以將晶片100安裝於基板110之接合區域之晶片接合裝置。
晶片100由半導體材料所構成。晶片100形成為具有作為主面之正面及背面之長方體狀。具體而言，晶片100具有形成有特定之電路圖案之正面即第1面102a、及與第1面102a相反之背面即第2面102b。於本實施形態中，晶片100係以晶片100之第2面102b與基板110對向之方向安裝於基板110。此種方向下之安裝態樣一般被稱為晶片接合。再者，關於晶片100之第1面102a之詳細情況將於下文敍述。
接合裝置10具備晶圓(wafer)平台12、中間平台14、接合 平台16、接合頭18、經由Z軸驅動機構20而安裝於接合頭18之真空吸附工具22、獲取晶片100之圖像資訊之攝像部26，27、使接合頭18於XY軸方向上移動之XY台28、及控制該等各種構成之動作之控制部30。
於以下之說明中，將XY軸方向設為與晶片100之主面(或任一平台之主面)平行之方向，將Z軸方向設為垂直於XY軸方向之面之方向而進行說明。再者，X軸方向及Y軸方向相互正交。
於晶圓平台12，載置由經單片化之複數個晶片100所構成之晶圓120。晶圓120具有形成有特定之電路圖案之正面即第1面122a(相當於晶片100之第1面122a)、及與第1面122a相反之背面即第2面122b(相當於晶片100之第2面122b)。晶圓120亦可藉由使第2面122b貼合於晶圓平台12上之膜而固定於晶圓平台12上。晶圓平台12上之晶片100係於藉由真空吸附工具22及拾取單元(未圖示)之協調動作而拾取晶片100後，由移送頭(未圖示)移送至中間平台14。
中間平台14係用以暫時載置晶片100之平台。中間平台係配置於晶圓平台12與接合平台16之間。晶片100係以第2面102b與中間平台14對向之方向配置於中間平台14上。中間平台14構成為可藉由線性馬達(未圖示)等驅動機構而於XY軸方向上移動。晶片100亦可藉由使第2面102b貼合於中間平台14上之膜而固定於中間平台14上。中間平台14上之晶片100於藉由真空吸附工具22及拾取單元(未圖示)之協調動作而拾取晶片100後，由移送頭(未圖示)移送至接合平台16。
於接合平台16配置有基板110。基板110亦可藉由例如貼合於接合平台16上之膜而固定於接合平台16上。基板110至少具有1個接合 區域，於接合區域安裝任一晶片100。例如於基板110具有複數個接合區域之情形時，可於在各接合區域安裝晶片100後，針對每個接合區域將基板110製成單片，藉此獲得複數個完成品(半導體裝置)。
又，於基板110上之各接合區域，複數個晶片100亦可藉由堆積而安裝。於此種堆疊型之半導體裝置中，積層於同一接合區域之2個以上之晶片100全部亦可均以第1面102a朝向與基板110相反之方向之方式安裝。或者，積層於同一接合區域之一部分晶片亦可以與其他晶片不同之方向安裝。
基板110之材質亦可由例如有機材料(例如環氧基板或聚醯亞胺基板)、無機材料(例如玻璃基板)或其等之複合材料(例如玻璃環氧基板)所構成。基板110亦可為所謂之插入式基板。又，基板110亦可由金屬材料(例如引線框架材料)所構成。
再者，接合平台16構成為藉由導軌(未圖示)等驅動機構而使基板110可於X軸方向上移動。又，接合平台16具備用以對基板110進行加熱之加熱手段。
於接合頭18，經由Z軸驅動機構20而安裝真空吸附工具22，且於自真空吸附工具22隔開特定距離之位置安裝有攝像部26。換言之，於圖1所示之例中，真空吸附工具22及攝像部26係固定於接合頭18，接合頭18藉由XY台28而移動，藉此真空吸附工具22及攝像部26一併於XY軸方向上移動。又，亦可於與攝像部26為相反側設置攝像部27。亦可為攝像部26能夠拍攝晶片100之第1面102a，攝像部27能夠拍攝晶片100之第2面102b。再者，攝像部26亦可不固定於接合頭18，亦可為能夠與真 空吸附工具22分開移動。
真空吸附工具22具有真空吸附晶片100之吸附面24。真空吸附工具22係用以為了將晶片100移送至特定位置而將其吸附保持且為了將晶片100安裝於基板110而進行加壓者。再者，關於真空吸附工具22之詳細情況將於下文敍述。
控制部30係控制為了利用接合裝置10進行接合而所必需之處理者。控制部30進行包含真空吸附工具22之XYZ軸驅動、θ軸驅動(繞Z軸之旋轉)及傾斜驅動(傾斜方向)之真空吸附工具22之位置控制、抽真空之導通或斷開控制、將晶片100安裝至基板110時之負載控制、基板110之加熱控制等。控制部30係以可於接合頭18、真空吸附工具22以及攝像部26等各構成之間收發訊號之方式連接，藉此控制其等之動作。
於控制部30連接有用以輸入控制資訊之操作部32、及用以輸出控制資訊之顯示部34。藉此，作業人員可一面藉由顯示部34辨識畫面，一面藉由操作部32輸入所需之控制資訊。
控制部30係具備CPU及記憶體等之電腦裝置，於記憶體中預先儲存用以進行接合所需之處理之接合程式等。控制部30構成為可執行與下述本實施形態之晶片之安裝方法相關之各步驟(例如具備用以使電腦執行各動作之程式)。
其次，一面參照圖2~圖5，一面說明本實施形態之晶片之安裝方法。本實施形態之晶片之安裝方法可使用圖1所示之接合裝置10進行。
此處，圖2係用以說明本實施形態之晶片之安裝方法的流程 圖。圖3係表示將工具配置於晶片之上方之步驟的圖，圖4係表示將附著於工具之晶片經由接著材料安裝於基板之步驟的圖。又，圖5係表示工具之吸附面與晶片之凸塊形成面之大小關係的俯視圖。
首先，於晶圓平台12上準備經單片化之複數個晶片100(S10)。具體而言，如圖1所示，於晶圓平台12上準備由貼合於膜之複數個晶片100所構成之晶圓120。晶圓120係複數個晶片100之各者以第1面102a朝向上方並且第2面102b與晶圓平台12對向之方向配置於晶圓平台12上。
其次，將晶片10移送至中間平台14(S11)。具體而言，將晶圓平台12上之複數個晶片100逐個移送至中間平台14。如已說明般，晶片100之移送亦可藉由真空吸附工具22進行。
其次，於中間平台14之晶片100之上方配置真空吸附工具22(S12)。此處，對真空吸附工具22及晶片100之詳細情況進一步進行說明。
真空吸附工具22具有與晶片100之第1面102a對向之吸附面24。又，於吸附面24，設置有用以進行抽真空之至少1個抽吸孔25。抽吸孔25亦可設置於吸附面24之XY俯視之中央。
如圖3所示，晶片100係藉由將第2面102b貼合於中間平台14上之膜(省略圖示)而固定於中間平台14上。於晶片100之第1面102a，設置有複數個電極墊104、設置於複數個電極墊104上之複數個凸塊電極106、及設置於複數個凸塊電極106之周圍之保護膜108。電極墊104係與形成於第1面102a之電路圖案電性連接之端子。又，於電極墊104之 外周端部，由保護膜108被覆，藉此而露出之電極墊104之中央部成為與凸塊電極106之連接部。
如圖4所示，凸塊電極106具有較第1面102a上之保護膜108之上表面更突起之高度H。凸塊電極106之高度H係凸塊電極106之頂點與保護膜108之上表面之間的距離。
電極墊104及凸塊電極106之材質並無限定，例如電極墊104亦可為鋁或銅等，又，凸塊電極106亦可為金等。
於圖3所示之例中，在此種晶片100之第1面102a與真空吸附工具22之吸附面24之間配置多孔質性片材44。例如，可藉由在中間平台14之上方配置安裝有多孔質性片材44之一對捲盤40、42而於晶片100與真空吸附工具22之間配置多孔質性片材44。一對捲盤40、42由供給捲盤40及捲取捲盤42所構成。藉由將自供給捲盤40供給之多孔質性片材44之一部分向捲取捲盤42搬送，而可將多孔質性片材44之一部分區域依序送至晶片100之第1面102a與真空吸附工具22之吸附面24之間。
於圖3所示之例中，多孔質性片材44於捲盤40、42排列之X軸方向上具有長度方向，於Y軸方向上具有寬度方向，以及於Z軸方向上具有厚度方向。多孔質性片材44具有與真空吸附工具22之吸附面24對向之第1面44a、及與晶片100之第1面102a對向之第2面44b，第1面44a與第2面44b之間之距離為多孔質性片材44之厚度。如圖3所示，多孔質性片材44具有厚度T1。厚度T1與凸塊電極106之高度H具有T1≧H之關係。於該情形時，多孔質性片材44之厚度T1較佳為凸塊電極106之高度H之5~10倍，可使用不阻礙來自加熱器之熱傳導之範圍之厚度的多孔質性 片材44。
多孔質性片材44之寬度方向之長度較晶片100之第1面102a之Y軸方向之寬度大，又，較真空吸附工具22之Y軸方向之寬度大。藉此，可使多孔質性片材44確實地介置於晶片100之第1面102a與真空吸附工具22之吸附面24之間。
多孔質性片材44具有用以使第1面44a與第2面44b之間透氣之複數個孔。關於多孔質性片材44之格利(Gurley)值，為了吸附晶片，值較小者較佳，例如較佳為具有1~2(s/100cc/in2)之範圍。
由於將晶片100安裝於基板110時第1面102a會至少部分地吸收凸塊電極106之突起高度，故而多孔質性片材44由與凸塊電極106及吸附面24之任一者相比均柔軟之材質所構成。多孔質性片材44亦可為例如不織布。
多孔質性片材44例如亦可為四氟乙烯樹脂(PTFE)。於該情形時，多孔質性片材44亦可為PTFE奈米纖維。關於PTFE奈米纖維，亦可使用具有約1~2μm之孔徑、具有約56μm之厚度、具有1.2(s/100cc/in2)之格利值者。PTFE奈米纖維雖然較厚，但可減小格利值(提高透氣性)，又，即便加熱至約260℃亦幾乎不會熱收縮，故而對例如施加230℃以上之熱之製造製程具有耐熱性。因此，PTFE奈米纖維若用作本實施形態之多孔質性片材44則有效。
返回至圖2之流程圖，其次，於真空吸附工具22之吸附面24與晶片100之第1面102a(凸塊形成面)之間夾持多孔質性片材44，藉由真空吸附工具22吸附晶片100(S13)。具體而言，於圖3中，使真空吸 附工具22下降，於在其吸附面24與晶片100之第1面102a之間夾持著多孔質性片材44之狀態下，自真空吸附工具22之抽吸孔25進行抽真空。如此，可隔著多孔質性片材44將晶片100吸附於真空吸附工具22之吸附面24。其後，使真空吸附工具22與多孔質性片材44一併向接合平台16移送。如此，將晶片100移送至基板110之接合區域上。
其次，將晶片100經由接著材料114安裝於基板110之接合區域(S14)。具體而言，預先於基板110之接合區域上設置接著材料114，並使真空吸附工具22下降，藉此，如圖4所示，藉由真空吸附工具22隔著多孔質性片材44對晶片100之第1面102a進行加壓。此時，對晶片100及接著材料114進行加熱。藉此，使接著材料114加熱熔融，其後使其硬化。如此，如圖4所示，於在吸附面24與第1面102a之間夾持著多孔質性片材44之狀態下，將晶片100經由接著材料114安裝於基板110之接合區域。
接著材料114可使用於常溫下構成為片狀者，或者，亦可使用於常溫下構成為糊狀者。接著材料114亦可為例如熱固性樹脂。於該情形時，可藉由對接著材料114進行加熱而使其熔融及硬化。
加壓時之多孔質性片材44之厚度T2(T2≦T1)較佳為相對於凸塊電極106之突起高度H具有T2≧H之關係。
據此，可於將晶片100安裝於基板110之接合區域時，在真空吸附工具22之吸附面24與晶片100之第1面102a之間的空隙設置多孔質性片材44。藉此，可防止空氣自空隙洩漏，故而可維持藉由來自抽吸孔25之抽吸對晶片100產生之吸附力。進而，由於可遮斷通過空隙之空氣，故而能夠均勻地進行加熱。
又，藉由在該空隙設置多孔質性片材44，可抑制於對晶片100或接著材料114進行加熱時所產生之煙霧氣體附著於真空吸附工具22之吸附面24、或侵入至抽吸孔25。因此，可抑制真空吸附工具22之吸附面24或抽吸孔25等受到污染，從而能夠謀求維護性之提高。
此處，如圖5所示，真空吸附工具22之吸附面24亦可具有較晶片100之第1面102a大之尺寸。具體而言，真空吸附工具22之X軸方向之寬度WX及Y軸方向之寬度WY、以及晶片100之X軸方向之寬度DX及Y軸方向之寬度DY亦可為WX≧DX且WY≧DY。
據此，可藉由吸附面24確實地對晶片100進行加壓，並且可使對晶片100之第1面102a之加壓力均勻化。進而，於本實施形態中，由於在吸附面24與第1面102a之間介置有多孔質性片材44，故而於將晶片100經由接著材料114安裝於基板110時，可利用多孔質性片材44遮斷於晶片100之側面爬升之接著材料114。因此，可防止接著材料114附著於真空吸附工具22之吸附面24。
又，如圖4所示，於設為真空吸附工具22之X軸方向之寬度WX中之真空吸附工具22之抽吸孔25之寬度W1及其兩端之寬度W2之情形時，亦可為W1<W2。又，真空吸附工具22之寬度W2與加壓時之多孔質性片材44之厚度T2亦可為T2>W2(或T1>W2)。
據此，由於自真空吸附工具22之端部至抽吸孔25之距離較多孔質性片材44之厚度小，故而即便將多孔質性片材44設為凸塊電極106之突起高度H以上，亦可防止真空吸附工具22之抽吸力受損。
本發明可不限定於上述實施形態而進行各種變形後應用。例 如，亦可於上述構成中省略中間平台14，自晶圓平台12藉由真空吸附工具22以夾持著多孔質性片材44之狀態將拾取之晶片100搬送至接合平台16。
又，於上述實施形態中係使用安裝於一對捲盤40、42之多孔質性片材44，但關於多孔質性片材44，亦可預先準備多片單片狀之片材，使該單片狀之片材介置於真空吸附工具22之吸附面24與晶片100之第1面102a之間。
通過上述發明之實施形態而說明之實施態樣可根據用途適當地組合、或者施以變更或改良而使用，本發明並不限定於上述實施形態之記載。由申請專利範圍之記載可知，此種組合或者施以變更或改良後之形態亦可包含於本發明之技術範圍。

Claims (5)

  1. 一種晶片之安裝方法，其包含如下步驟：準備具有形成有複數個凸塊電極之凸塊形成面的晶片；將具有吸附面之真空吸附工具以上述吸附面與上述凸塊形成面對向之方向配置於上述晶片之上方；以上述吸附面吸附具有通氣性之多孔質性片材，並以上述多孔質性片材覆蓋形成於上述吸附面之抽吸孔；於上述吸附面與上述凸塊形成面之間夾持多孔質性片材，藉由上述真空吸附工具吸附上述晶片；及以使上述多孔質性片材吸收上述複數個凸塊電極之突起之方式以上述真空吸附工具加壓上述晶片，且藉由上述真空吸附工具加熱上述晶片及接著材料而將所吸附之上述晶片經由上述接著材料安裝於基板之接合區域，上述多孔質性片材成為抑制於對上述晶片或上述接著材料進行加熱時所產生之煙霧氣體侵入至上述真空吸附工具之抽吸孔的過濾器；將夾持於上述吸附面與上述凸塊形成面之間之上述多孔質性片材之區域搬送；於上述安裝之步驟中，以上述真空吸附工具進行加壓時之上述多孔質性片材具有上述凸塊形成面上之上述凸塊電極之突起高度以上之厚度。
  2. 如申請專利範圍第1項之晶片之安裝方法，其中上述多孔質性片材由較上述凸塊電極或上述吸附面柔軟之材質所構成。
  3. 如申請專利範圍第1或2項之晶片之安裝方法，其中上述多孔質性片材由不織布所構成。
  4. 如申請專利範圍第1或2項之晶片之安裝方法，其中上述吸附面具有較上述凸塊形成面大之尺寸。
  5. 如申請專利範圍第1或2項之晶片之安裝方法，其中上述多孔質性片材係自配置於上述真空吸附工具之左右之一對捲盤供給。
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