CN109314062B - 管芯的安装方法 - Google Patents
管芯的安装方法 Download PDFInfo
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- CN109314062B CN109314062B CN201780033011.1A CN201780033011A CN109314062B CN 109314062 B CN109314062 B CN 109314062B CN 201780033011 A CN201780033011 A CN 201780033011A CN 109314062 B CN109314062 B CN 109314062B
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- die
- porous sheet
- vacuum suction
- suction tool
- bump
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000000853 adhesive Substances 0.000 claims abstract description 29
- 230000001070 adhesive effect Effects 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 26
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 238000001179 sorption measurement Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000000779 smoke Substances 0.000 claims description 5
- 239000004745 nonwoven fabric Substances 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 9
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000002121 nanofiber Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000009194 climbing Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 241000309551 Arthraxon hispidus Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- -1 Polytetrafluoroethylene Polymers 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Abstract
一种管芯的安装方法,其包括:准备具有形成有多个凸块电极(106)的凸块形成面(102a)的管芯(100)的步骤;将具有吸附面(24)的真空吸附工具(22)在吸附面(24)与凸块形成面(102a)相向的方向上,配置在管芯(100)的上方的步骤;在吸附面(24)与凸块形成面(102a)之间插入多孔质性片材(44),通过真空吸附工具(22)来吸附管芯(100)的步骤;以及将由真空吸附工具(22)所吸附的管芯(100)经由粘接材料(114)而安装在衬底(110)的接合区域中的步骤;且多孔质性片材(44)具有凸块形成面(102a)上的凸块电极(106)的突起高度以上的厚度。由此,可谋求真空吸附的稳定化及维护性的改善。
Description
技术领域
本发明涉及一种管芯的安装方法。
背景技术
通过真空吸附来拾取已通过切割而单片化的多个管芯的技术已为人所知(参照专利文献1及专利文献2)。例如,在专利文献2中公开有在包含端子及设置在此端子上的凸块的裸芯片的与电路功能面相反的面侧,真空吸附所述裸芯片。真空吸附在工具上的裸芯片在使电路功能面与衬底相向的方向上,搭载在涂布有粘接剂的衬底上。在专利文献2的发明中,为了防止衬底上的粘接剂因真空吸附或工具的加压等而从裸芯片的侧面朝上方爬上去,而采用使片材介于工具的吸附面与裸芯片之间的结构,由此抑制粘接剂的上爬,防止粘接剂附着在工具上。
现有技术文献
专利文献
专利文献1:日本专利特开2006-66625号公报
专利文献2:日本专利第5669137号公报
发明内容
发明所要解决的问题
此处,专利文献2的发明是将在电路功能面上真空吸附裸芯片作为前提者,未对在形成有凸块电极的凸块形成面侧真空吸附裸芯片进行任何考虑。关于此点,由于通过凸块电极而在凸块形成面上设置有凹凸,因此当使管芯真空吸附在工具时,可能因凸块电极的突起高度而在工具吸附面与管芯之间产生空隙。因此,当真空吸附有管芯时,存在因产生空气的泄漏,真空度下降而导致工具的吸附性恶化的情况。
另外,当经由粘接材料而将管芯安装在衬底上时,存在如下的情况:从粘接材料中产生烟气(fume gas),此烟气从因凸块电极的突起高度而产生的空隙流入,工具等受到污染。因此,存在必须频繁地清洗工具等,维护性恶化的情况。
本发明是鉴于此种情况而成者,其目的在于谋求真空吸附的稳定化及维护性的改善。
解决问题的技术手段
本发明的一实施例的管芯的安装方法包括:准备具有形成有多个凸块电极的凸块形成面的管芯的步骤;将具有吸附面的真空吸附工具在吸附面与凸块形成面相向的方向上,配置在管芯的上方的步骤;在吸附面与凸块形成面之间插入多孔质性片材,通过真空吸附工具来吸附管芯的步骤;以及将由真空吸附工具所吸附的管芯经由粘接材料而安装在衬底的接合区域中的步骤。
根据所述结构,当将管芯安装在衬底的接合区域中时,可在真空吸附工具的吸附面与管芯的凸块形成面之间的空隙中设置多孔质性片材。由此,可防止空气从空隙中泄漏,因此可维持管芯的吸附力。另外,通过在所述空隙中设置多孔质性片材,可抑制从粘接材料中产生的气体等对不需要的物质的吸引。因此,可抑制真空吸附工具受到污染,可谋求维护性的提升。
在所述管芯的安装方法中,多孔质性片材也可以是具有凸块形成面上的凸块电极的突起高度以上的厚度者。
在所述管芯的安装方法中,多孔质性片材也可以是由比凸块电极或吸附面柔软的材质所组成的。
在所述管芯的安装方法中,多孔质性片材也可以是由无纺布所组成的。
在所述管芯的安装方法中,吸附面也可以具有比凸块形成面大的尺寸。
在所述管芯的安装方法中,安装的步骤也可以是通过真空吸附工具来对管芯及粘接材料进行加热,由此将管芯安装在衬底的接合区域中,且多孔质性片材也可以是变成抑制对管芯或粘接材料进行加热时所产生的烟气侵入真空吸附工具的吸引孔中的过滤器。
在所述管芯的安装方法中,多孔质性片材也可以从配置在真空吸附工具的左右的一对卷盘(reel)供给。
发明的效果
根据本发明,可谋求真空吸附的稳定化及维护性的改善。
附图说明
图1是表示本发明的实施方式的管芯的安装方法中所使用的接合装置的图。
图2是表示本发明的实施方式的管芯的安装方法的流程图的图。
图3是用于说明本发明的实施方式的管芯的安装方法的图,具体而言,其是表示将工具配置在管芯的上方的步骤的图。
图4是用于说明本发明的实施方式的管芯的安装方法的图,具体而言,其是表示将吸附在工具上的管芯经由粘接材料而安装在衬底上的步骤的图。
图5是用于说明本发明的实施方式的管芯的安装方法的图,具体而言,其是表示工具的吸附面与管芯的凸块形成面的大小的关系的平面图。
[符号的说明]
10:接合装置
12:晶片平台
14:中间平台
16:接合平台
18:接合头
20:Z轴驱动机构
22:真空吸附工具
24:吸附面
25:吸引孔
26、27:摄像部
28:XY工作台
30:控制部
32:操作部
34:显示部
40:卷盘
42:卷盘
44:多孔质性片材
44a:第1面
44b:第2面
100:管芯
102a:第1面
102b:第2面
104:电极垫
106:凸块电极
108:保护膜
110:基板
114:粘接材料
120:晶片
122a:第1面
122b:第2面
DX、DY、W1、W2、WX、WY:宽度
H:高度
T1、T2:厚度
X、Y、Z:方向
S10~S14:步骤
具体实施方式
以下对本发明的实施方式进行说明。在以下的附图的记载中,以同一或类似的符号表示同一或类似的构成元件。附图为例示,各部的尺寸或形状是示意性的尺寸或形状,不应将本申请发明的技术范围限定在此实施方式来进行解释。
图1是表示本发明的实施方式的管芯的安装方法中所使用的接合装置10的概略的图。接合装置10是用于将管芯100安装在衬底110的接合区域中的管芯接合装置。
管芯100包含半导体材料。管芯100形成为具有作为主面的表面及背面的长方体状。具体而言,管芯100具有作为形成有规定的电路图案的表面的第1面102a、及作为与第1面102a相反的背面的第2面102b。在本实施方式中,在管芯100的第2面102b与衬底110相向的方向上,将管芯100安装在衬底110上。此种方向上的安装形态通常被称为管芯接合。另外,管芯100的第1面102a的详细情况将后述。
接合装置10包括:晶片平台12,中间平台14,接合平台16,接合头18,经由Z轴驱动机构20而安装在接合头18上的真空吸附工具22,取得管芯100的图像信息的摄像部26、摄像部27,使接合头18在XY轴方向上移动的XY工作台28,控制所述各种结构的动作的控制部30。
在以下的说明中,将XY轴方向设为与管芯100的主面(或任一个平台的主面)平行的方向来进行说明,将Z轴方向设为与XY轴方向的面垂直的方向来进行说明。另外,X轴方向及Y轴方向相互正交。
在晶片平台12上载置包含经单片化的多个管芯100的晶片120。晶片120具有作为形成有规定的电路图案的表面的第1面122a(相当于管芯100的第1面102a)、及作为与第1面122a相反的背面的第2面122b(相当于管芯100的第2面102b)。晶片120也可以通过将第2面122b粘着在晶片平台12上的膜上,而固定在晶片平台12上。通过真空吸附工具22及拾取单元(未图示)的协调动作来拾取晶片平台12上的管芯100后,通过移送头(未图示)来将管芯100移送至中间平台14上。
中间平台14是用于暂时地载置管芯100的平台。中间平台配置在晶片平台12与接合平台16之间。管芯100在第2面102b与中间平台14相向的方向上配置在中间平台14上。中间平台14以通过线性马达(未图示)等的驱动机构而可在XY轴方向上移动的方式构成。管芯100也可以通过将第2面102b粘着在中间平台14上的膜上,而固定在中间平台14上。通过真空吸附工具22及拾取单元(未图示)的协调动作来拾取中间平台14上的管芯100后,通过移送头(未图示)来将管芯100移送至接合平台16上。
在接合平台16上配置有衬底110。衬底110例如也可以通过粘着在接合平台16上的膜上,而固定在接合平台16上。衬底110具有至少一个接合区域,在接合区域中安装任一个管芯100。例如当衬底110具有多个接合区域时,在将管芯100安装在各接合区域中后,在各接合区域中使衬底110变成单片,由此可获得多个完成品(半导体装置)。
另外,也可以通过将多个管芯100堆积在衬底110上的各接合区域中来进行安装。在此种堆叠型的半导体装置中,层叠在同一接合区域中的两个以上的管芯100均以第1面102a朝向与衬底110相反的方向的方式进行安装。或者,层叠在同一接合区域中的一部分的管芯也可以安装在与其他管芯不同的方向上。
衬底110的材质例如也可以包含有机材料(例如环氧衬底或聚酰亚胺衬底)、无机材料(例如玻璃衬底)或它们的复合材料(例如玻璃环氧衬底)。衬底110也可以是所谓的中介层(interposer)。另外,衬底110也可以包含金属材料(例如引线框架材料)。
另外,接合平台16以通过导轨(未图示)等的驱动机构,可使衬底110在X轴方向上移动的方式构成。另外,接合平台16包括用于对衬底110进行加热的加热部件。
在接合头18上经由Z轴驱动机构20而安装有真空吸附工具22,且在与真空吸附工具22相隔规定距离的位置上安装有摄像部26。换言之,在图1所示的例子中,真空吸附工具22及摄像部26固定在接合头18上,接合头18通过XY工作台28来进行移动,由此真空吸附工具22及摄像部26一同在XY轴方向上移动。另外,也可以在与摄像部26相反侧设置摄像部27。摄像部26可对管芯100的第1面102a进行摄像,摄像部27也可以对管芯100的第2面102b进行摄像。另外,摄像部26也可以不固定在接合头18上,也可以与真空吸附工具22分开来进行移动。
真空吸附工具22具有真空吸附管芯100的吸附面24。真空吸附工具22是为了将管芯100移送至规定位置上而进行吸附保持,且为了将管芯100安装在衬底110上而进行加压者。另外,真空吸附工具22的详细情况将后述。
控制部30是对为了利用接合装置10的接合而需要的处理进行控制者。控制部30进行包含真空吸附工具22的XYZ轴驱动、θ轴驱动(环绕Z轴的旋转)及倾斜驱动(倾斜方向)的真空吸附工具22的位置控制,抽真空的开启或关闭控制,朝衬底110上安装管芯100时的负荷控制,衬底110的加热控制等。控制部30以与接合头18、真空吸附工具22及摄像部26等各结构之间可进行信号的收发的方式连接,由此控制它们的动作。
在控制部30上连接有用于输入控制信息的操作部32、及用于输出控制信息的显示部34。由此,作业者可一面通过显示部34来识别画面,一面通过操作部32来输入需要的控制信息。
控制部30是包括中央处理器(Central Processing Unit,CPU)及存储器等的计算机装置,在存储器中事先存储用于进行接合中需要的处理的接合程序等。控制部30以可执行与后述的本实施方式的管芯的安装方法相关的各步骤的方式构成(例如包括用于使计算机执行各动作的程序)。
继而,一面参照图2~图5,一面对本实施方式的管芯的安装方法进行说明。本实施方式的管芯的安装方法可使用图1中所示的接合装置10来进行。
此处,图2是用于说明本实施方式的管芯的安装方法的流程图。图3是表示将工具配置在管芯的上方的步骤的图,图4是表示将吸附在工具上的管芯经由粘接材料而安装在衬底上的步骤的图。另外,图5是表示工具的吸附面与管芯的凸块形成面的大小的关系的平面图。
首先,在晶片平台12上准备已变成单片的多个管芯100(S10)。具体而言,如图1所示,在晶片平台12上准备粘着在膜上的包含多个管芯100的晶片120。晶片120在多个管芯100的各者的第1面102a朝向上方,并且第2面102b与晶片平台12相向的方向上,配置在晶片平台12上。
继而,将管芯100移送至中间平台14上(S11)。具体而言,将晶片平台12上的多个管芯100一个一个地移送至中间平台14上。如已说明那样,管芯100的移送也可以通过真空吸附工具22来进行。
继而,将真空吸附工具22配置在中间平台14的管芯100的上方(S12)。此处,对真空吸附工具22及管芯100的详细情况进行进一步说明。
真空吸附工具22具有与管芯100的第1面102a相向的吸附面24。另外,在吸附面24上设置有用于进行抽真空的至少一个吸引孔25。吸引孔25也可以设置在吸附面24中的在XY平面上观察时的中央。
如图3所示,管芯100通过第2面102b粘着在中间平台14上的膜(省略图示)上,而固定在中间平台14上。在管芯100的第1面102a上设置有多个电极垫104、设置在多个电极垫104上的多个凸块电极106、及设置在多个凸块电极106的周围的保护膜108。电极垫104是与形成在第1面102a上的电路图案进行电性连接的端子。另外,在电极垫104的外周端部由保护膜108包覆,由此露出的电极垫104的中央部成为与凸块电极106的连接部。
如图4所示,凸块电极106具有从第1面102a上的保护膜108的上表面突起的高度H。凸块电极106的高度H是凸块电极106的顶点与保护膜108的上表面之间的距离。
电极垫104及凸块电极106的材质并无限定,例如电极垫104可以是铝或铜等,另外,凸块电极106可以是金等。
在图3所示的例子中,在此种管芯100的第1面102a与真空吸附工具22的吸附面24之间配置多孔质性片材44。例如,在中间平台14的上方配置安装有多孔质性片材44的一对卷盘40、42,由此可在管芯100与真空吸附工具22之间配置多孔质性片材44。一对卷盘40、42包含供给卷盘40及卷取卷盘42。通过朝卷取卷盘42中搬送从供给卷盘40供给的多孔质性片材44的一部分,而可在管芯100的第1面102a与真空吸附工具22的吸附面24之间依次输送多孔质性片材44的一部分的区域。
在图3所示的例子中,多孔质性片材44在卷盘40、卷盘42并排的X轴方向上具有长度方向,在Y轴方向上具有宽度方向,及在Z轴方向上具有厚度方向。多孔质性片材44具有与真空吸附工具22的吸附面24相向的第1面44a、及与管芯100的第1面102a相向的第2面44b,第1面44a与第2面44b之间的距离为多孔质性片材44的厚度。如图3所示,多孔质性片材44具有厚度T1。在本实施方式中,厚度T1与凸块电极106的高度H具有T1≥H的关系。在此情况下,优选多孔质性片材44的厚度T1为凸块电极106的高度H的5倍~10倍,但可使用不阻碍来自加热器的导热的范围的厚度的多孔质性片材44。
多孔质性片材44的宽度方向的长度比管芯100的第1面102a的Y轴方向的宽度大,另外,比真空吸附工具22的Y轴方向的宽度大。由此,可使多孔质性片材44确实地介于管芯100的第1面102a与真空吸附工具22的吸附面24之间。
多孔质性片材44具有用于使第1面44a与第2面44b之间通气的多个孔。关于多孔质性片材44的格利值(gurley value),为了吸附芯片,以值小为宜,例如优选具有1~2(s/100cc/in2)的范围。
多孔质性片材44为了在将管芯100安装在衬底110上时至少部分地吸收第1面102a上的凸块电极106的突起高度,而包含比凸块电极106及吸附面24的任一者柔软的材质。多孔质性片材44例如也可以是无纺布。
多孔质性片材44例如也可以是四氟乙烯树脂(聚四氟乙烯(Polytetrafluoroethylene,PTFE))。在此情况下,多孔质性片材44也可以是PTFE纳米纤维。PTFE纳米纤维也可以使用具有约1μm~2μm的孔径,具有约56μm的厚度,具有1.2(s/100cc/in2)的格利值者。PTFE纳米纤维虽然厚,但可减小格利值(提升透气性),另外,即便加热至约260℃,也几乎不会热收缩,因此在例如施加230℃以上的热的制造工艺中具有耐热性。因此,PTFE纳米纤维若用作本实施方式的多孔质性片材44,则有效果。
返回至图2的流程图,继而,在真空吸附工具22的吸附面24与管芯100的第1面102a(凸块形成面)之间插入多孔质性片材44,通过真空吸附工具22来吸附管芯100(S13)。具体而言,在图3中,使真空吸附工具22下降,在已将多孔质性片材44插入其吸附面24与管芯100的第1面102a之间的状态下,从真空吸附工具22的吸引孔25进行抽真空。如此,可隔着多孔质性片材44将管芯100吸附在真空吸附工具22的吸附面24上。其后,将真空吸附工具22与多孔质性片材44一同朝接合平台16上移送。如此,将管芯100移送至衬底110的接合区域上。
继而,将管芯100经由粘接材料114而安装在衬底110的接合区域中(S14)。具体而言,事先在衬底110的接合区域上设置粘接材料114,使真空吸附工具22下降,由此如图4所示,通过真空吸附工具22而隔着多孔质性片材44对管芯100的第1面102a进行加压。此时,对管芯100及粘接材料114进行加热。由此,使粘接材料114加热熔融,其后使其硬化。如此,如图4所示,在已将多孔质性片材44插入吸附面24与第1面102a之间的状态下,将管芯100经由粘接材料114而安装在衬底110的接合区域中。
粘接材料114可使用在常温下构成为片状者、或者也可以使用在常温下构成为浆状者。粘接材料114例如也可以是热硬化性树脂。在此情况下,可通过对粘接材料114进行加热来使其熔融及硬化。
加压时的多孔质性片材44的厚度T2(T2≤T1)优选为相对于凸块电极106的突起高度H,具有T2≥H的关系。
根据以上所述,当将管芯100安装在衬底110的接合区域中时,可在真空吸附工具22的吸附面24与管芯100的第1面102a之间的空隙中设置多孔质性片材44。由此,可防止空气从空隙中泄漏,因此可维持通过来自吸引孔25的吸引所产生的管芯100的吸附力。进而,可阻挡穿过空隙的空气,因此可均匀地进行加热。
另外,通过在所述空隙中设置多孔质性片材44,可抑制对管芯100或粘接材料114进行加热时所产生的烟气附着在真空吸附工具22的吸附面24上、或侵入吸引孔25中。因此,可抑制真空吸附工具22的吸附面24或吸引孔25等受到污染,可谋求维护性的提升。
此处,如图5所示,真空吸附工具22的吸附面24也可以具有比管芯100的第1面102a大的尺寸。具体而言,真空吸附工具22的X轴方向的宽度WX及Y轴方向的宽度WY、以及管芯100的X轴方向的宽度DX及Y轴方向的宽度DY也可以是WX≥DX且WY≥DY。
根据以上所述,可通过吸附面24来确实地对管芯100进行加压,并且可使对于管芯100的第1面102a的加压力均匀化。进而,在本实施方式中,由于多孔质性片材44介于吸附面24与第1面102a之间,因此当将管芯100经由粘接材料114而安装在衬底110上时,可通过多孔质性片材44来阻挡在管芯100的侧面向上爬的粘接材料114。因此,可防止粘接材料114附着在真空吸附工具22的吸附面24上。
另外,如图4所示,当将真空吸附工具22的X轴方向的宽度WX中的真空吸附工具22的吸引孔25的宽度设为W1,将其的两端的宽度设为W2时,也可以是W1<W2。另外,真空吸附工具22的宽度W2与加压时的多孔质性片材44的厚度T2也可以是T2>W2(或T1>W2)。另外,图4是示意性地表示者,尤其,T2的厚度与W1及W2的各厚度的关系并不限定于图示。
根据以上所述,从真空吸附工具22的端部至吸引孔25为止的距离比多孔质性片材44的厚度小,因此即便将多孔质性片材44设为凸块电极106的突起高度H以上,也可以防止真空吸附工具22的吸引力受损。
本发明并不限定于所述实施方式,可进行各种变形来应用。例如,在所述结构中也可以省略中间平台14,将在插入有多孔质性片材44的状态下通过真空吸附工具22从晶片平台12上拾取的管芯100搬送至接合平台16上。
另外,在所述实施方式中,使用安装在一对卷盘40、42中的多孔质性片材44,但也可以事先准备多片单片状的多孔质性片材44,并使此单片状的片材介于真空吸附工具22的吸附面24与管芯100的第1面102a之间。
另外,在所述实施方式中,对通常时的多孔质性片材44的厚度T1与凸块电极106的高度H为T1≥H的关系进行了说明,但本发明并不限定于此,作为变形例,厚度T1与凸块电极106的高度H也可以具有T1<H的关系。另外,在所述实施方式中,对加压时的多孔质性片材44的厚度T2与凸块电极106的高度H为T2≥H的关系进行了说明,但本发明并不限定于此,作为变形例,厚度T2与凸块电极106的高度H也可以具有T2<H的关系。
通过所述发明的实施方式所说明的实施的方式可对应于用途而适宜地组合、或者施加变更或改良来使用,本发明并不限定于所述实施方式的记载。此种组合或者施加了变更或改良的实施方式也可以包含在本发明的技术范围内,但根据权利要求的记载而明确。
Claims (5)
1.一种管芯的安装方法,其包括:
准备具有形成有多个凸块电极的凸块形成面的管芯的步骤;
将具有吸附面的真空吸附工具在所述吸附面与所述凸块形成面相向的方向上,配置在所述管芯的上方的步骤;
输送多孔质性片材的一部分的区域,以使所述吸附面与所述凸块形成面之间能通过所述多孔质性片材通气的步骤;
将所述多孔质性片材吸附在所述吸附面上,使所述吸附面上形成的吸引孔被所述多孔质性片材覆盖的步骤;
在所述吸附面与所述凸块形成面之间插入所述多孔质性片材,通过所述真空吸附工具来吸附所述管芯的步骤;以及
将由所述真空吸附工具所吸附的所述管芯经由粘接材料而安装在衬底的接合区域中的步骤,其包括使用所述真空吸附工具在所述衬底的所述接合区域对所述管芯加压,使得所述多个凸块电极的突出高度完全被所述多孔质性片材吸收,并通过所述真空吸附工具来对所述管芯及所述粘接材料进行加热,其中,所述多孔质性片材变成抑制对所述管芯或粘接材料进行加热时所产生的烟气侵入所述真空吸附工具的吸引孔中的过滤器,
且当使用所述真空吸附工具对所述管芯加压时,所述多孔质性片材具有所述凸块形成面上的所述凸块电极的突起高度以上的厚度。
2.根据权利要求1所述的管芯的安装方法,其中所述多孔质性片材是由比所述凸块电极或所述吸附面柔软的材质所组成的。
3.根据权利要求1或2所述的管芯的安装方法,其中所述多孔质性片材是由无纺布所组成的。
4.根据权利要求1或2所述的管芯的安装方法,其中所述吸附面具有比所述凸块形成面大的尺寸。
5.根据权利要求1或2所述的管芯的安装方法,其中所述多孔质性片材从配置在所述真空吸附工具的左右的一对卷盘供给。
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