CN111095507B - 接合装置和接合方法 - Google Patents

接合装置和接合方法 Download PDF

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Publication number
CN111095507B
CN111095507B CN201880058439.6A CN201880058439A CN111095507B CN 111095507 B CN111095507 B CN 111095507B CN 201880058439 A CN201880058439 A CN 201880058439A CN 111095507 B CN111095507 B CN 111095507B
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film
bonding
joint surface
reel
joint
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CN111095507A (zh
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瀬山耕平
野口勇一郎
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Shinkawa Ltd
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Shinkawa Ltd
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
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Abstract

本发明提供一种接合装置和接合方法，在为了防止上爬而使用膜的接合装置中，抑制装置的生产性下降。接合装置具备：接合机构，具有经由膜而可装卸地保持半导体裸片的接合面、及朝接合面提供热的加热器；膜搬送机构，朝接合面供给膜；剥离杆，可进入膜与接合面之间；以及驱动部，驱动剥离杆。

Description

接合装置和接合方法
技术领域
本公开涉及一种接合装置及接合方法。
背景技术
将半导体裸片(semiconductor die)等的电子零件接合于基板上的安装技术，已为人所知。例如，在专利文献1中，公开有如下技术，即抑制因接着剂的上爬(creeping up)而导致接着剂附着于半导体裸片上。在专利文献1的技术中，经由树脂膜来将半导体裸片接合于基板上。
现有技术文献
专利文献
专利文献1：日本专利特开2015-35493号公报
发明内容
发明所要解决的问题
但是，在专利文献1的构成中，膜因加热器的热而熔融。其结果存在：已熔融的膜粘附于接合工具上的情况。膜的粘附导致装置的停止。因此，使装置的生产性下降，故需要进行维护作业。
本公开的接合装置及接合方法是鉴于此种情况而成。本公开说明一种在为了防止上爬而使用膜的接合装置中，可抑制装置的生产性下降的接合装置及接合方法。
解决问题的技术手段
本公开的一实施例是将电子零件安装于基板或其他电子零件上的接合装置，包括：接合部，具有：接合面，经由膜而能够装卸地保持电子零件，及热源，朝接合面供给热；膜供给部，沿着接合面而供给膜；剥离构件，能够进入膜与接合面之间；以及驱动部，使剥离构件在膜与接合面之间移动，来使膜自接合面分离。
在接合装置中，接合工具经由被供给至接合面上的膜来保持电子零件。而且，接合工具自热源朝接合面提供热。接合工具利用所述热将所保持的电子零件安装于基板或其他电子零件上。当对电子零件提供了热时，所述热经由接合面与膜而朝电子零件移动。其结果，可能产生膜因所述热而粘附于接合面上的情况。因此，接合装置通过驱动部来驱动剥离构件。所述驱动，使剥离构件在膜与接合面之间移动。其结果，剥离构件可剥离粘附于接合面上的膜。因此，接合装置可消除膜对于接合面的粘附。因此，在为了防止上爬而使用膜的接合装置中，可抑制装置的生产性下降。
发明的效果
本公开的接合装置及接合方法在为了防止上爬而使用膜的接合装置中，可抑制装置的生产性下降。
附图说明
图1是表示实施方式的接合装置的构成的概略图。
图2是表示通过图1的接合装置来组装的半导体装置的剖面的图。
图3是将图1中所示的接合装置的接合工具放大来表示的立体图。
图4是表示第一形态中的膜剥离机构的正面图。
图5是表示自第一形态朝第二形态的过渡刚完成后的膜剥离机构的正面图。
图6是表示第二形态中的膜剥离机构的正面图。
图7是表示膜刚剥落后的膜剥离机构的正面图。
图8是表示接合方法的主要步骤的流程图。
符号的说明
1：接合装置
2：晶片平台
2a：搭载面
3：中间平台
3a：载置面
4：接合平台
4a：搭载面
6：接合单元
7：XY平台
8：控制部
8a：操作部
8b：显示部
9：摄像部
11：接合头
12：接合工具
13：Z轴驱动机构
14：摄像部
20：接合机构
21：本体
21a：基础区块
21S：接合面
22：加热器
30：膜搬送机构
31：供给单元
32：回收单元
33：供给本体
34：供给卷盘
35A、35B：供给销
36：回收本体
37：回收卷盘
38A、38B：回收销
40：膜剥离机构
41：盖
42：臂体
42a：连结部
43：剥离杆
44：致动器
44a：致动器本体
44b：驱动杆
45：连杆机构
46：第一连杆
46a：固定节
46b：驱动节
47：第二连杆
47a：固定节
47b：驱动节
50：驱动部
101：基板
101a：第一主面
101b：第二主面
102：半导体裸片
102a：第一主面
102b：第二主面
103：接着构件
104：电极垫
106：凸块电极
108：保护膜
107：电极垫
110：晶片
110a：第一主面
110b：第二主面
200：膜
A1：突出方向
A2：右方向
A3：斜下方向
CA：合成
C1、C2：移动成分
D：间隙
L1：假想线
L2：中心线
T1：轨迹
T2：轨迹
UD：下死点
具体实施方式
＜接合装置＞
以下，一面参照附图，一面对用以实施本公开的接合装置及接合方法的形态进行详细说明。在附图的说明中，对同一个元件标注同一个符号，并省略重复的说明。
在本公开的说明中，所谓透气性，是夹在接合头与半导体裸片之间的防止上爬用的片材所具有的使空气透过的性能。另外，所谓具有透气性，是指：防止上爬用的片材因自形成于接合头上的吸引孔供给的真空，而可使空气透过至接合头可将半导体裸片保持于其接合面上的程度的性能。具有透气性的防止上爬用的片材，例如为多孔质片材、不织布或形成有透气孔的片材，但不对防止上爬用的片材的形态加以限定来解释。在本公开中，将防止上爬用的片材设为形成有透气孔的片材来进行说明。即，例示了：最初不具有透气性，但通过设置透气孔的加工，而获得透气性的片材。
如图1所示，接合装置1在基板101的接合区域中，安装作为电子零件的一例的半导体裸片102。作为半导体裸片102的安装结果，获得具备基板101与半导体裸片102的半导体装置100。在以下的说明中，相互正交的X轴及Y轴为与半导体裸片102的主面(或任一个平台的主面)平行的方向。Z轴是与X轴及Y轴两者垂直的方向。
对通过接合装置1来组装的半导体装置100进行说明。如图2所示，半导体装置100具有：基板101与半导体裸片102。
基板101呈单片的板状。基板101具有：第一主面101a与第二主面101b。在第一主面101a上，形成至少一个搭载有半导体裸片102的搭载区域。因此，将半导体裸片102接合于基板101的第一主面101a上。第二主面101b是第一主面101a的背面。基板101的材质例如为：有机材料、无机材料、或这些的复合材料。由有机材料形成的基板101例如为环氧基板或聚酰亚胺基板。由无机材料形成的基板101例如为玻璃基板。由复合材料形成的基板101例如为玻璃环氧基板。基板101是所谓的载板(interposer)。
也可在一片基板上设置多个搭载区域。在此情况下，将半导体裸片102接合于基板的各搭载区域中。之后，在各搭载区域中使基板变成单片。其结果，获得多个半导体装置100。另外，半导体装置也可具有：层叠有多个半导体裸片102的堆叠结构。堆叠型的半导体装置的两个以上的半导体裸片102可全部朝向同一个方向。另外，堆叠型的半导体装置的两个以上的半导体裸片102也可朝向互不相同的方向。另外，半导体装置也可在一个搭载区域上，接合两个以上的半导体裸片102。
半导体裸片102是通过接着构件103而被固定于基板101上。接着构件103例如为热硬化性树脂。
半导体裸片102在俯视下呈比基板101小的单片的板状。半导体裸片102具有：第一主面102a及第二主面102b。第一主面102a设置有规定的电路图案。在第一主面102a上，进而设置多个电极垫104、多个凸块电极106、及保护膜108。第一主面102a与基板101的第一主面101a相对。此种接合形态被称为：面向下接合(face down bonding)。第二主面102b是与第一主面102a相反的背面。半导体裸片102包含硅等的半导体材料。
电极垫104与形成于第一主面101a上的电极垫107电性连接。凸块电极106设置于电极垫104上。保护膜108设置于多个凸块电极106的周围。换言之，电极垫104的外周端部由保护膜108所包覆。另一方面，电极垫104的中央部从保护膜108暴露出来。所述暴露出来的部分为与凸块电极106的电性连接部。作为电极垫104及凸块电极106的材质，例示为具有导电性的材料。例如，电极垫104可包含铝或铜等。另外，例如，凸块电极106可包含金等。
继而，对接合装置1进行说明。如图1所示，接合装置1具有：晶片平台2、中间平台3、接合平台4、接合单元6、XY平台7、接合控制部(以下，简称为“控制部8”)、及摄像部9。
晶片平台2暂时载置晶片110。在晶片平台2的搭载面2a上，通过粘着膜来固定晶片110。所述晶片110包含：经单片化的多个半导体裸片102。晶片110具有：第一主面110a与第二主面110b。第一主面110a具有规定的电路图案。第一主面110a对应于半导体裸片102的第一主面102a。第二主面110b是与第一主面110a相反的背面。第二主面110b对应于半导体裸片102的第二主面102b。
中间平台3暂时载置半导体裸片102。在中间平台3的载置面3a上，通过粘着膜来固定半导体裸片102。中间平台3配置在晶片平台2与接合平台4之间。中间平台3通过线性马达等驱动机构而可在X轴方向及Y轴方向上移动。
在使半导体裸片102自晶片平台2朝接合平台4移动的步骤中，首先，自晶片平台2拾取(pickup)半导体裸片102。继而，使半导体裸片102的上下反转。即，最初第一主面102a为上侧，第二主面102b为下侧。通过上下反转，第二主面102b为上侧而变成第一主面102a。在所述状态下，将半导体裸片102载置于中间平台3上。因此，载置于中间平台3上的半导体裸片102的第一主面102a与中间平台3的载置面3a相对。
接合平台4暂时载置接合中的基板101。在接合平台4的搭载面4a上，通过粘着膜来固定基板101。此时，基板101的第一主面101a与接合平台4的搭载面4a相对。接合平台4通过包含导轨的驱动机构(未图示)而可使基板101在X轴方向上移动。另外，接合平台4具有：用以对半导体裸片102及基板101进行加热的加热器。
接合单元6具有：接合头11(底座)、接合工具12、Z轴驱动机构13、及摄像部14。接合头11安装于XY平台7上。接合头11可在X轴方向及Y轴方向上移动。接合工具12经由Z轴驱动机构13而安装于接合头11上。Z轴驱动机构13使接合工具12在正或负的Z轴方向上移动。进而，Z轴驱动机构13使接合工具12绕着Z轴转动。所谓绕着Z轴，是与绕着接合面21S的法线方向相同的含义。另外，摄像部14也安装于接合头11上。若通过XY平台7来使接合头11移动，则安装于接合头11上的接合工具12及摄像部14也同样地移动。
摄像部14在Y轴方向上与接合工具12仅相隔规定距离。摄像部14对载置于中间平台3上的半导体裸片102的第二主面102b进行摄像。另外，摄像部14对载置于接合平台4上的半导体裸片102的第二主面102b进行摄像。摄像部14也可不固定于接合头11上。摄像部14的移动也可以与接合工具12的移动分开。
接合工具12具有接合面21S。接合面21S保持半导体裸片102。接合面21S是沿着Z轴方向延伸的接合工具12之中，接合平台4侧的下端面。另外，接合工具12具有：空气真空(airvacuum)功能和/或送风(air blow)功能。通过这些功能，接合工具12吸附半导体裸片102或使半导体裸片102脱离。在本公开中，在接合工具12保持半导体裸片102时，接合工具12及半导体裸片102隔着膜200。接合工具12的构成将如后所述。
膜200具有：多个孔，用以在一侧的主面与另一侧的主面之间进行通气。为了吸附半导体裸片102等的电子零件，膜200的格利值(gurley value)的值越小越好。膜200的格利值例如为1以上2以下(s/100cc/in2)。
膜200比作为接合对象的半导体裸片102的半导体材料还柔软。另外，膜200比构成接合面21S的材料还柔软。此处所述的“柔软”例如是指：膜200的刚性比半导体裸片102的刚性还低。作为膜200，例如，为不织布膜。
膜200的材质并无特别限定，作为膜200的材质的一个例子，可采用四氟乙烯树脂(聚四氟乙烯(Polytetrafluoroethylene，PTFE))或聚酰亚胺。例如，当将四氟乙烯树脂用作膜200时，四氟乙烯树脂也可为PTFE纳米纤维。PTFE纳米纤维也可使用具有约1μm以上、2μm以下的孔径，具有约56μm的厚度，格利值具有1.2(s/100cc/in2)的PTFE纳米纤维。PTFE纳米纤维可相对于厚度，减小格利值。换言之，若使用PTFE纳米纤维作为膜200，则通气性提高。
控制部8对于接合装置1的构成零件的运行进行控制。具体而言，控制部8以与接合单元6、XY平台7、摄像部9、摄像部14等的各构成之间可进行信号的收发的方式连接。通过所述连接，控制各构成的运行。例如，控制部8为具备中央处理器(Central Processing Unit，CPU)及存储器等的计算机装置。在存储器中事先储存用以进行接合中所需的处理的接合程序等。控制部8以可执行后述的与本公开的半导体裸片的接合方法相关的各步骤的方式构成。控制部8与用以输入控制信息的操作部8a、及用以输出控制信息的显示部8b连接。
控制部8进行接合单元6的位置控制(XYZ轴)、接合工具12的位置控制(Z轴)、接合工具12的绕着Z轴的位置控制(θ)、接合工具12的倾斜控制。所谓倾斜控制，是相对于Z轴的倾斜控制。控制部8例如进行空气真空功能的开启或关闭控制、送风功能的开启或关闭控制、朝基板101上安装半导体裸片102时的负荷控制、和接合平台4及接合工具12的热供给控制。控制部8对于后述的接合工具12所具有的加热器22、膜搬送机构30及膜剥离机构40的运行进行控制。
参照图3，进一步对接合工具12进行详细说明。如图3所示，接合工具12具有：接合机构20(接合部)、膜搬送机构30(膜供给部)、及膜剥离机构40(膜剥离部)。
接合机构20具有：本体21与加热器22。加热器22是加热部。本体21具有：基础区块21a、接合区块21b、及接合面21S。四角柱状的基础区块21a的上端与Z轴驱动机构13连结。在基础区块21a的下端，安装了接合区块21b。基础区块21a也可为圆柱状。接合区块21b具有接合面21S。接合面21S为接合区块21b的下端面。接合面21S经由膜200而可装卸地保持半导体裸片102。半导体裸片102的装卸是通过多个吸引孔来进行。吸引孔的上端与泵等的气压系统(pneumatic pressure system)连接。吸引孔的下端在接合面21S上形成开口。
加热器22配置于本体21的内部。加热器22对半导体裸片102进行加热。加热器22也可对基板101进行加热。加热器22对加热动作的开始与停止进行切换。所述切换对应于自控制部8所接收的控制信号。
膜搬送机构30朝接合面21S搬送膜200。膜搬送机构30自接合面21S回收膜200。膜搬送机构30配置于比接合面21S更上方。膜搬送机构30具有：供给单元31与回收单元32。供给单元31及回收单元32夹持接合机构20。自供给单元31卷出的膜200，是经由接合面21S而卷绕于回收单元32上。
供给单元31具有：供给本体33、供给卷盘34(一侧的卷盘)、以及供给销35A、供给销35B。供给本体33固定于基础区块21a上。供给本体33保持供给卷盘34、供给销35A、供给销35B的相对的位置。
膜200的一端部安装于供给卷盘34上。供给卷盘34以相对于供给本体33可转动的方式设置。供给卷盘34通过马达来控制旋转角度。通过所述角度控制，来进行膜200的卷出、或作用于膜200上的张力(tension)的控制。供给卷盘34与后述的回收卷盘37一同构成一对卷盘。
供给销35A、供给销35B设置于供给卷盘34的下方、且接合机构20的附近。圆柱状的供给销35A、供给销35B的基端固定于膜剥离机构40的盖41上。供给销35A、供给销35B的前端在+X轴方向上延长。供给销35A、供给销35B将自供给卷盘34卷出的膜200引导至接合面21S为止。配置于接合机构20侧的供给销35B的外周下表面位于比接合面21S略上方。
膜剥离机构40安装于供给本体33。膜剥离机构40配置于接合机构20的附近。膜剥离机构40的详细情况，将如后所述。
回收单元32具有：回收本体36、回收卷盘37(另一侧的卷盘)、以及回收销38A、回收销38B。回收单元32不具有膜剥离机构40。回收单元32除去膜剥离机构40，具有与供给单元31大致相同的构成。
膜200的另一端部安装于回收卷盘37上。回收卷盘37以相对于回收本体36可转动的方式设置。回收卷盘37通过马达来控制旋转角度。通过所述角度控制，来进行膜200的卷绕、及作用于膜200上的张力的控制。
回收销38A、回收销38B设置于回收卷盘37的下方、且接合机构20的附近。圆柱状的回收销38A、回收销38B的基端固定于回收本体36上。回收销38A、回收销38B的前端在+X轴方向上延长。回收销38A、回收销38B将自回收卷盘37卷出的膜200引导至接合面21S为止。
对膜剥离机构40进行详细说明。如图4所示，膜剥离机构40具有：盖41、臂体42、剥离杆43(剥离构件)、致动器44、及连杆机构45。再者，在图4中，为了明确显示连杆机构45的构成，而显示了卸除盖41时的结构。在图4中，盖41是由双点划线来表示。膜剥离机构40中，通过致动器44来提供驱动力的连杆机构45，使臂体42沿着规定的轨迹往返移动。在臂体42的前端设置剥离杆43。通过臂体42沿着规定的轨迹移动，剥离杆43剥离粘附在接合面21S上的膜200。
盖41为板状的构件，盖41的基端是固定于供给本体33上。
臂体42为板状的构件。在靠近接合机构20的臂体42的前端固定剥离杆43的基端。臂体42为连杆机构45的一部分。臂体42可相对于供给本体33及盖41而变更相对的位置。即，通过臂体42移动，剥离杆43移动。剥离杆43的移动沿着规定的轨迹。
致动器44是所谓的驱动源。作为一个例子，致动器44为气缸。致动器本体44a可转动地与供给本体33连结。致动器44的驱动杆44b通过连结部42a而可转动地与臂体42连结。致动器44与连杆机构45协动，来构成驱动部50。
连杆机构45使剥离杆43沿着规定的轨迹移动。连杆机构45是所谓的四节连杆。连杆机构45包含：第一连杆46、第二连杆47、臂体42及盖41。第一连杆46及第二连杆47的各自的一端，作为驱动节46b、驱动节47b而与臂体42连结。驱动节46b、驱动节47b的位置相对于供给本体33而可相对地移动。第一连杆46及第二连杆47的各自的另一端，作为固定节46a、固定节47a而与盖41连结。所述固定节46a、固定节47a的位置相对于供给本体33而不相对地移动。即，第一连杆46以将固定节46a作为中心轴且驱动节46b追随(follow)圆弧状的轨迹的方式转动。同样地，第二连杆47以将固定节47a作为中心轴且驱动节47b追随圆弧状的轨迹的方式转动。
根据此种构成，若致动器44的驱动杆44b伸缩，则连结驱动杆44b的前端的臂体42得到驱动。在臂体42上连结有第一连杆46及第二连杆47的各自的驱动节46b、驱动节47b。因此，连结第一连杆46及第二连杆47的驱动节46b、驱动节47b的臂体42为驱动连杆。臂体42的移动轨迹是由第一连杆46及第二连杆47的另一端相对于盖41进行转动的动作来规定。
进而，一面参照图4、图5、图6及图7，一面对膜剥离机构40的运行进行说明。
图4表示第一形态时的膜剥离机构40。所谓第一形态是剥离杆43未接触膜200的状态。因此，第一形态是未进行膜200的剥离动作的状态。例如，第一形态可在通过接合机构20来保持半导体裸片102时采用。
在第一形态中，剥离杆43配置在供给卷盘34与接合机构20之间。剥离杆43配置于比接合面21S更上方。更详细而言，剥离杆43配置于比将供给销35B与接合面21S连结的假想线L1更上方。所述形态可通过致动器44使驱动杆44b变短来获得。
图5表示自第一形态朝第二形态的过渡刚完成后时的膜剥离机构40。所谓第二形态是正进行自接合面21S上剥离膜200的动作的状态。即，所谓图5中所示的自第一形态朝第二形态的过渡刚完成后，为即将开始剥离膜200的动作前的状态。
当自第一形态朝第二形态切换时，首先，使剥离杆43自比接合面21S更上方朝比接合面21S更下方移动。所述移动直至剥离杆43接触膜200为止。所述移动只要具有上下方向的移动成分C1即可。因此，所述移动也可为上下方向的移动成分C1与朝左右方向的移动成分C2的合成CA。所谓左右方向为靠近接合机构20的方向。因此，也可为使剥离杆43朝斜下方向移动的构成。
剥离杆43刚接触膜200后，剥离杆43的位置为比接合面21S更上方。因此，一面通过剥离杆43来向下按压膜200，一面进一步使剥离杆43朝比接合面21S更下方移动。剥离杆43移动到至少剥离杆43的外周面上的最高的位置位于比接合面21S更下方为止。换言之，剥离杆43移动至在剥离杆43的外周面上的最高的位置与接合面21S之间形成间隙D的程度为止。
此种剥离杆43的移动，是通过致动器44及连杆机构45的协动来实现。具体而言，致动器44使驱动杆44b的突出长度变长。于是，臂体42沿着突出方向A1受到按压。此时，产生对应于臂体42中的驱动杆44b的连结部42a与第一连杆46及第二连杆47的固定节46a、固定节47a之间的距离的扭矩。所述扭矩使第一连杆46及第二连杆47的各自的驱动节46b、驱动节47b，以固定节46a、固定节47a为旋转中心而在逆时针方向上旋转。通过所述第一连杆46及第二连杆47的各自的一端的移动，来限制臂体42的移动轨迹。若第一连杆46及第二连杆47的各自的一端在逆时针方向上旋转，则各自的一端朝下方移动。进而，各自的一端靠近接合机构20。因此，臂体42也仿照各自的一端的动作而朝下方移动。进而，臂体42的各自的一端以靠近接合机构20的方式移动。其结果，固定于臂体42的前端的剥离杆43如作为移动成分C1来表示，朝下方移动。进而，剥离杆43如作为移动成分C2来表示，以靠近接合机构20的方式移动。在朝所述第二形态的过渡刚完成后，第一连杆46及第二连杆47的位置为下死点UD的跟前。
图6表示第二形态正在进行时的膜剥离机构40。图7表示膜自接合面21S上完全地剥落时的膜剥离机构40。所谓第二形态正在进行，是指：通过剥离杆43在膜200的延长方向上移动，而正自接合面21S上剥离膜200的期间。膜200的延长方向是指：沿着左右方向的方向。但不需要相对于左右方向严格的一致。
剥离杆43以与接合面21S之间至少确保间隙D的状态，而朝右方向A2移动。于是，膜200的一部分200a挂在剥离杆43上。若保持所述状态而使剥离杆43进一步朝右方向A2移动，则膜200被自接合面21S朝斜下方向A3剥下。即，在正在剥离膜200的状态下，可存在如下的情况：在剥离杆43与接合面21S之间，存在粘附于接合面21S上的膜200的一部分、及刚自接合面21S上剥离后的膜200的一部分。
此种剥离杆43的移动，是通过致动器44及连杆机构45的协动来实现。具体而言，致动器44使驱动杆44b的突出长度进一步变长。在朝第二形态的过渡刚完成后，第一连杆46及第二连杆47的位置如图5的轨迹T1及轨迹T2所示，为下死点UD的跟前。在第二形态中，第一连杆46及第二连杆47进一步在逆时针方向上旋转。其结果，第一连杆46及第二连杆47的一端如图7的轨迹T1及轨迹T2所示，通过下死点UD。在所述下死点UD的附近的移动过程中，第一连杆46及第二连杆47的驱动节46b、驱动节47b中的朝上下方向的移动量微小。因此，第一连杆46及第二连杆47的驱动节46b、驱动节47b的移动可看作朝右方向的移动。因此，可使剥离杆43大概在膜200的延伸方向上移动。此处所述的膜200的延伸方向是指沿着接合面21S的方向。
如图7所示，当剥离杆43位于比接合面21S的中心线L2更靠近右侧(回收卷盘37侧)时，存在：膜200自接合面21S全部剥落的情况。
剥离杆43的最终的到达位置可为事先决定的位置。到达位置也可设为膜200自接合面21S全部剥落时的位置。本公开的最终的到达位置为膜200自接合面21S全部剥落时的位置。在此情况下，需要对膜200自接合面21S全部剥落进行探测的构成。以下，对探测膜200的剥落的构成的例子进行说明。
膜200的剥落的探测，是通过利用控制部8控制供给卷盘34及回收卷盘37来进行。首先，在第一形态中，控制部8使供给卷盘34在卷出方向上转动。通过所述转动，在自供给卷盘34至接合机构20之间的膜200中产生松弛部分。继而，在第一形态中，控制部8使回收卷盘37在卷绕方向上转动。此处，在膜200未粘附于接合面21S上的情况下，回收卷盘37对膜200仅卷绕膜200所具有的松弛的部分。因此，在回收卷盘37中，在卷绕松弛部分的期间内不产生负荷扭矩，在卷绕松弛部分后产生负荷扭矩。当探测到此种扭矩的变化时，可知：膜200未粘附于接合面21S上。
另一方面，当膜200粘附于接合面21S上时，即便使回收卷盘37转动，也不卷绕松弛部分。因此，在回收卷盘37的转动后，可立即产生负荷扭矩。当探测到此种扭矩时，可知：膜200粘附于接合面21S上。
而且，在回收卷盘37中产生了负荷扭矩的状态，是在接合面21S与回收卷盘37之间的膜200中产生了张力的状态。在此种状态下，进行所述剥离动作。而且，在膜200自接合面21S全部剥落的瞬间，张力被解除。其结果，回收卷盘37在卷绕方向上略微转动。因此，当探测到所述转动时，可看作：膜200已自接合面21S剥落。
进而，张力被解除的膜200有时也具有松弛部分。因此，使回收卷盘37进而在卷绕方向上略微转动。于是，在回收卷盘37中，在卷绕松弛部分的期间内不产生负荷扭矩。在卷绕松弛部分后产生负荷扭矩。通过探测此种扭矩变化，可确实地探测膜200已剥落。
＜接合方法＞
继而，一面参照图8，一面对利用接合装置1的接合方法进行说明。本公开的接合方法，使用图1中所示的接合装置1来进行。通过本公开的接合方法，来制造半导体装置100(参照图2)。
首先，在晶片平台2上，准备变成单片的多个半导体裸片102(S1)。具体而言，在晶片平台2上，准备晶片110。晶片110包含粘着于膜上的多个半导体裸片102。晶片110配置于晶片平台2上。此时，多个半导体裸片102的各自的第一主面102a朝向上方。进而，第二主面102b与晶片平台2相对。
继而，将半导体裸片102移送至中间平台3上(S2)。例如，将晶片平台2上的多个半导体裸片102一个一个地移送至中间平台3。所述移送通过吸附工具及拾取单元的协调运行来进行。
继而，将膜200安装于接合面21S上(S3)。然后，在所安装的膜200上，形成吸附用的细孔(S4)。
继而，吸附半导体裸片102(S5)。首先，控制部8控制XY平台7，使接合机构20朝中间平台3上移动。继而，控制部8控制Z轴驱动机构13，使接合机构20朝负的Z轴方向移动。当半导体裸片102的第二主面102b接触到接合面21S上的膜200时，控制部8使移动停止。继而，控制部8控制气压系统，利用吸引孔而开始进行吸引。通过所述吸引，而使半导体裸片102吸附于接合机构20上。然后，控制部8控制Z轴驱动机构13，使接合机构20朝正的Z轴方向移动。
继而，通过接合机构20并经由接着构件103，而将半导体裸片102热压接于基板101上(S6)。
具体而言，首先，控制部8控制XY平台7，使接合机构20朝基板101上移动(S6a)。即，使吸附有半导体裸片102的接合机构20朝接合平台4上移动。在接合平台4上配置有基板101。在基板101的搭载半导体裸片102的区域中配置接着构件103。接着构件103在常温下为浆状。
继而，控制部8利用摄像部14等，来检测基板101的位置(S6b)。继而，控制部8控制供给卷盘34和/或回收卷盘37，解除膜200中的张力(S6c)。继而，控制部8进行半导体裸片102与基板101的最终的对位(S6d)。此时，半导体裸片102经由膜200而保持于接合机构20上。而且，在步骤S6c中，膜200中的张力得到缓和，因此，可伴随接合机构20的动作而使半导体裸片102移动。具体而言，为了调整相对于基板101的半导体裸片102的绕着Z轴的位置，控制部8使接合机构20绕着Z轴略微转动。在此情况下，膜200中的张力得到缓和，由此半导体裸片102也伴随接合机构20的动作而绕着Z轴旋转。
继而，控制部8控制供给卷盘34和/或回收卷盘37，对膜200赋予张力(S6e)。
继而，控制部8将半导体裸片102热压接于基板101上(S6f)。控制部8将控制信号发送至Z轴驱动机构13中。其结果，使接合机构20朝接合平台4下降。所述下降动作持续至凸块电极106接触基板101的第一主面101a为止。控制部8若探测到凸块电极106对于基板101的接触，则使下降动作停止。另外，控制部8将控制信号发送至加热器22(热源)中。其结果，加热器22开始加热。所述加热动作可在进行下降动作的期间内开始，也可在下降动作结束后开始。根据所述下降动作与加热动作，经由通过下降动作而接触接着构件103的半导体裸片102，使热自接合面21S朝接着构件103传导。通过所述热，接着构件103硬化。
接着材料也可为在常温下具有膜状的形状。所述膜状的接着材料因受热而软化。因此，控制部8使下降动作与加热动作同时进行，由此使膜状的接着材料软化并朝下方按压半导体裸片102，而使凸块电极106接触基板101。然后，控制部8使加热动作停止。其结果是，膜状的接着材料的温度上升。其结果，接着材料硬化。通过所述硬化，而将半导体裸片102固定于基板101。
通过所述动作，半导体裸片102的凸块电极106与基板101的配线电性接合。同时，利用树脂对半导体裸片102与基板101之间进行密封。再者，接着构件103并不限定于在接合前事先设置于基板101上的形态。接着构件103也可作为底部填充剂(underfill)而在接合步骤中填充至半导体裸片102与基板101之间。
在半导体裸片102朝向基板101的热压接结束后，使半导体裸片102自接合面21S脱离(S6g)。控制部8使吸引孔的吸引动作变成关闭状态。之后，控制部8控制Z轴驱动机构13，使接合机构20朝正的Z轴方向移动。根据这些动作，可在束缚膜200的状态下，仅使半导体裸片102自接合面21S脱离。
实施自接合机构20剥离膜200的步骤(S7)。首先，控制部8进行膜200是否粘附于接合面21S上的确认(S7a)。膜200对于接合面21S的粘附，可能存在膜200粘附于接合面21S的整个面上的情况，也可能存在膜200粘附于接合面21S的一部分上的情况。如上所述，所述确认是通过控制部8控制供给卷盘34与回收卷盘37来进行。继而，在未探测到粘附的情况下，再次自步骤S1起依次实施。另一方面，在探测到粘附的情况下，进行剥离动作。首先，为了探测膜200已通过剥离动作而剥落，控制部8控制供给卷盘34及回收卷盘37，使供给卷盘34侧的膜200松弛且对回收卷盘37侧的膜200施加张力(S7b：第一运行)。然后，控制部8控制致动器44，进行剥离动作(S7c：第二运行)。而且，在剥离动作完成后，再次进行膜200是否粘附于接合面21S上的确认(S7a)。而且，在未探测到粘附的情况下，再次自步骤S1起依次实施。在探测到粘附的情况下，再次进行步骤S7b。
继而，对接合装置1及接合方法的作用效果进行说明。
在接合方法及接合装置1中，接合机构20经由被供给至接合面21S上的膜200来保持半导体裸片102。而且，接合机构20自加热器22朝接合面21S提供热，将所保持的半导体裸片102经由接着材料而热压接于基板101。于是，即便产生了接着材料的上爬，接合面21S也由膜200覆盖。故可保护接合面21S远离上爬的接着材料。进而，当提供了用于热压接的热时，所述热经由接合面21S与膜200而朝半导体裸片102移动。其结果，存在膜200因所述热而粘附于接合面21S上的情况。因此，接合装置1使剥离杆43进入膜200与接合面21S之间。通过所述动作，剥离粘附于接合面21S上的膜200。因此，接合装置1可保护接合面21S远离接着材料，并消除膜200对于接合面21S的粘附。因此，为了防止上爬而使用膜200的接合装置1，可抑制生产性下降。
然而，作为消除膜200对于接合面21S的粘附的构成，也可能存在：变更了接合机构20与膜搬送机构30的上下方向上的相对的位置的情况。例如，也可在保持接合机构20的位置的状态下，使膜搬送机构30的整体朝下方下降。但是，在此种构成中，需要用以使接合机构20及膜搬送机构30移动的构成。另外，在设为可移动的构成的情况下，存在刚性下降的倾向，因此，有可能对接合的精度造成影响。
另一方面，接合装置1不使接合机构20及膜搬送机构30移动，而通过剥离杆43来消除膜200的粘附。因此，不需要用以使接合机构20及膜搬送机构30移动的构成。其结果，接合装置1可确保所期望的刚性。
膜剥离机构40是由一个致动器44来供给驱动力。另外，膜剥离机构40通过连杆机构45来实现剥离杆43的轨迹。因此，可减少驱动轴而使驱动机构的构成单纯化，其结果，可通过简单的构成来实现复杂的轨迹控制。
膜搬送机构30具有：供给卷盘34及回收卷盘37，夹持了接合机构20，且配置于比接合面21S更上方。自供给卷盘34供给的膜200经由接合面21S而卷绕于回收卷盘37上。膜剥离机构40具有：驱动剥离杆43的致动器44及连杆机构45。驱动部50将第一形态与第二形态相互切换，所述第一形态将剥离杆43配置在供给卷盘34与接合机构20之间、且比接合面21S更上方，所述第二形态使剥离杆43在接合面21S的下方，一面接触膜200一面朝膜200的延伸方向移动。根据所述构成，使剥离杆43在接合面21S的下方朝膜200的延伸方向移动。其结果，可一面朝斜下方向对粘附于接合面21S上的膜200进行拉伸，一面将膜200剥下。因此，可确实地自接合面21S剥离膜200。
驱动部50在自第一形态朝第二形态切换时，使剥离杆43自比接合面21S更上方朝比接合面21S更下方移动直至接触膜200为止。其次，在使剥离杆43接触膜200后，一面向下按压膜200，一面进一步使剥离杆43朝比接合面21S更下方移动。根据所述动作，可使剥离杆43确实地朝比接合面21S更下方移动。其结果，可以在剥离杆43与接合面21S之间确保间隙D的状态进行剥离动作。
接合装置1进而具备：控制部8，对于供给卷盘34、回收卷盘37及驱动部50的运行进行控制。在第一形态时，控制部8以在自供给卷盘34伸展至接合面21S上的膜200的部分中不产生张力的方式，来控制供给卷盘34。控制部8进行第一运行，以在自接合面21S伸展至回收卷盘37上的膜200的部分中产生张力的方式，来控制回收卷盘37。在第一运行后，控制部8进行第二运行，以自第一形态朝第二形态切换的方式，来控制驱动部50。根据所述构成，通过供给卷盘34，而在膜200中产生松弛。而且，当对回收卷盘37进行了驱动时，若可回收所述松弛部分，则表示在供给卷盘34与回收卷盘37之间不存在粘附于其他构件上的部分。因此，可探测有无对于接合面21S的粘附。进而，实施剥离动作，在膜200自接合面21S剥落的瞬间，通过回收卷盘37来回收松弛部分。因此，可确实地探测膜200已自接合面21S剥落。
接合装置1安装了接合机构20及膜搬送机构30，并且，进而具备可绕着接合面的法线方向转动的接合头11。根据所述构成，可相对于基板101，来修正由接合机构20所保持的半导体裸片102的姿势。
以上，根据所述实施方式，对于本公开的接合装置及接合方法进行了详细说明。但是，本公开的接合装置及接合方法并不限定于所述实施方式。本公开的接合装置及接合方法可在不脱离其主旨的范围内，进行各种变形。
在所述实施方式中，对不具有透气孔的膜实施开孔处理，由此确保透气性。例如，膜也可为自最初起便具有透气性。例如，可使用由多孔质片材或不织布形成的膜。在此情况下，在接合方法中，不需要在膜中形成细孔的步骤(S4)。而且，接合装置不需要在膜中形成细孔的机构。因此，可使接合装置的构成变得简易，并且可减少接合方法的步骤数。
在所述公开中，作为膜剥离机构40的驱动源，例示了气缸，但并不限定于此。例如，作为驱动源，也可使用产生旋转扭矩的马达。

Claims (5)

1.一种接合装置，将电子零件安装于基板或其他电子零件上，其特征在于，包括：
接合部，具有：接合面，经由膜而能够装卸地保持所述电子零件，及热源，朝所述接合面供给热；
膜供给部，沿着所述接合面而供给所述膜；
剥离构件，能够进入所述膜与所述接合面之间；以及
驱动部，使所述剥离构件在所述膜与所述接合面之间移动，来使所述膜自所述接合面分离，
其中，
所述膜供给部包括：一对卷盘，夹持所述接合部且对所述膜赋予张力，
自一侧的所述卷盘所供给的所述膜，经由所述接合面而卷绕于另一侧的所述卷盘，
所述驱动部将第一形态与第二形态相互切换，
所述第一形态将所述剥离构件配置在一侧的所述卷盘与所述接合部之间、或另一侧的所述卷盘与所述接合部之间，且比所述接合面更上方，
所述第二形态使所述剥离构件在所述接合面的下方，一面接触所述膜，一面朝所述膜的延伸方向移动。
2.根据权利要求1所述的接合装置，其特征在于，
所述驱动部在自所述第一形态朝所述第二形态切换时，使所述剥离构件自比所述接合面更上方朝比所述接合面更下方移动直至接触所述膜为止，在使所述剥离构件接触所述膜后，一面向下按压所述膜，一面进一步使所述剥离构件朝比所述接合面更下方移动。
3.根据权利要求2所述的接合装置，其特征在于，还包括：
控制部，控制一对所述卷盘及所述驱动部的运行，
在所述第一形态时，所述控制部进行第一运行与第二运行，
所述第一运行以在自一侧的所述卷盘伸展至所述接合面的所述膜的部分中不产生张力的方式控制一侧的所述卷盘，并且以在自所述接合面伸展至另一侧的所述卷盘上的所述膜的部分中产生张力的方式控制另一侧的所述卷盘，
所述第二运行在所述第一运行后，以自所述第一形态朝所述第二形态切换的方式控制所述驱动部。
4.根据权利要求1至3中任一项所述的接合装置，其特征在于，还包括：
底座，安装了所述接合部及所述膜供给部，并且能够绕着所述接合面的法线方向转动。
5.一种接合方法，通过权利要求1至4中任一项所述的接合装置，将所述电子零件安装于所述基板或其他所述电子零件上，其特征在于，包括：
自所述膜供给部朝能够装卸地保持所述电子零件的所述接合部的所述接合面供给所述膜后，经由所述膜而将所述电子零件保持于所述接合面的步骤；
将保持于所述接合面的所述电子零件，安装于所述基板或其他所述电子零件的步骤；以及
使驱动能够进入所述膜与所述接合面之间的所述剥离构件的所述驱动部运行，而使所述剥离构件进入所述膜与所述接合面之间，以使所述膜自所述接合面分离的步骤。
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