CN110709971B - 电子零件封装装置 - Google Patents
电子零件封装装置 Download PDFInfo
- Publication number
- CN110709971B CN110709971B CN201780090036.5A CN201780090036A CN110709971B CN 110709971 B CN110709971 B CN 110709971B CN 201780090036 A CN201780090036 A CN 201780090036A CN 110709971 B CN110709971 B CN 110709971B
- Authority
- CN
- China
- Prior art keywords
- film
- electronic component
- tool
- hole
- base portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 92
- 230000007246 mechanism Effects 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000011347 resin Substances 0.000 claims abstract description 37
- 229920005989 resin Polymers 0.000 claims abstract description 37
- 238000005520 cutting process Methods 0.000 claims abstract description 26
- 238000005538 encapsulation Methods 0.000 claims description 26
- 238000011084 recovery Methods 0.000 claims description 11
- 238000004804 winding Methods 0.000 claims description 11
- 238000001179 sorption measurement Methods 0.000 claims description 7
- 238000011070 membrane recovery Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 46
- 238000007789 sealing Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000012840 feeding operation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- -1 Polytetrafluoroethylene Polymers 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32057—Shape in side view
- H01L2224/32058—Shape in side view being non uniform along the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32104—Disposition relative to the bonding area, e.g. bond pad
- H01L2224/32105—Disposition relative to the bonding area, e.g. bond pad the layer connector connecting bonding areas being not aligned with respect to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32104—Disposition relative to the bonding area, e.g. bond pad
- H01L2224/32106—Disposition relative to the bonding area, e.g. bond pad the layer connector connecting one bonding area to at least two respective bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75317—Removable auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75318—Shape of the auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/7532—Material of the auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9211—Parallel connecting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Supply And Installment Of Electrical Components (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
本发明提供一种电子零件封装装置(100),将半导体裸片(150)热压接于基板,并且利用绝缘树脂将半导体裸片(150)与基板的间隙密封,且所述电子零件封装装置包括将长条膜(210)以切片状切出的膜切出机构(200)、以及真空吸附半导体裸片(150)并热压接于基板的封装工具(110)。由此,能够在使封装头在水平方向上移动的电子零件封装装置(100)中,抑制绝缘树脂附着于封装工具。
Description
技术领域
本发明涉及一种将半导体裸片等电子零件热压接于基板的电子零件封装装置的结构。
背景技术
关于将半导体裸片等电子零件封装于基板的方法之一,有下述方法,即:将液状的绝缘树脂涂布于基板或将膜状的绝缘树脂贴附于电子零件的背侧后,利用封装工具将电子零件热压接于基板上。所述封装方法中,能一次进行基板与电子零件的接合、和电子零件与基板之间的密封树脂的硬化。但是,所述封装方法中存在从电子零件与基板之间渗出的绝缘树脂污染封装工具等问题。因此,可使用下述方法,即:在封装工具与电子零件之间夹持膜而进行热压接,由此防止从电子零件与基板之间渗出的绝缘树脂附着于封装工具。所述方法中可使用下述方法,即:利用膜搬送机构来搬送膜,每当封装电子零件时,更新夹持在封装工具与电子零件之间的膜(例如参照专利文献1)。
[现有技术文献]
[专利文献]
专利文献1:日本专利特开2015-35493号公报
发明内容
[发明所要解决的问题]
专利文献1所记载的电子零件封装装置包括:封装头,使封装工具相对于基板而上下移动封装、以及基板平台,保持基板并且使基板在水平方向上移动而进行基板的接合(bonding)位置与封装工具的对位,且依次更新膜的膜搬送机构搭载于封装头。
另一方面,近年来逐渐使用下述电子零件封装装置,此电子零件封装装置使封装头在水平方向上移动而将半导体裸片热压接于基板上,其中所述封装头使吸附半导体裸片的封装工具在上下方向上移动。
这种电子零件封装装置中,也存在从电子零件与基板之间渗出的绝缘树脂污染封装工具等问题。但是,专利文献1所记载那样的膜搬送机构为大型且重量也大,因此当搭载于使封装头在水平方向上移动的电子零件封装装置时,有导致电子零件封装装置的体积变大的问题。
因此,本发明的目的在于利用简便的方法抑制绝缘树脂附着于封装工具。
[解决问题的技术手段]
本发明的电子零件封装装置将电子零件热压接于基板或其他电子零件,并且利用绝缘树脂将电子零件与基板的间隙或电子零件与其他电子零件的间隙密封,且所述电子零件封装装置的特征在于包括:膜切出机构,使长条膜的末端在宽度方向上残留而切出切片状膜;以及封装工具,经由切片状膜而真空吸附电子零件,并将电子零件热压接于基板或其他电子零件,膜切出机构包括:基体部;膜送出辊,配置在基体部的一侧,长条膜卷绕于膜送出辊上;以及膜卷取辊,配置在基体部的另一侧,长条膜固定于膜卷取辊,膜送出辊供给长条膜,且膜卷取辊回收被切出了切片状膜的长条膜。
本发明的电子零件封装装置中也适合设为:具有膜回收机构,所述膜回收机构从封装工具的表面接收所述切片状膜。
本发明的电子零件封装装置中也适合设为:封装工具包含基部(base)、以及从基部突出而在表面真空吸附电子零件的岛部(island),膜切出机构基体部的具有形状比岛部的平面形状更大的孔;膜切出机构更包括:夹具(clamper),具有与基体部相同形状的孔,在与基体部之间夹入长条膜;以及冲头(punch),脱出或插入基体部的孔及夹具的孔,从长条膜中切出切片状膜,冲头的与长条膜接触的面为使切片状膜交付至封装工具的表面那样的平面。
本发明的电子零件封装装置中也适合设为:膜回收机构具有平板状的平台、以及沿着平台的面移动而从封装工具的表面依次接收切片状膜的吸附带。
[发明的效果]
本发明能够利用简便的方法来抑制绝缘树脂附着于封装工具。
附图说明
图1为本发明实施方式的电子零件封装装置的立体图。
图2为本发明实施方式的电子零件封装装置的平面图。
图3为本发明实施方式的电子零件封装装置的台架框(gantry frame)的截面图。
图4为表示图3所示的A部的详细的截面图。
图5为本发明实施方式的电子零件封装装置的膜切出机构的立体图。
图6为本发明实施方式的电子零件封装装置的膜回收机构的立体图。
图7A为表示本发明实施方式的电子零件封装装置的膜切出机构的膜进给动作的说明图。
图7B为表示本发明实施方式的电子零件封装装置的膜切出机构的膜夹入动作的说明图。
图7C为表示本发明实施方式的电子零件封装装置的膜切出机构的切片状膜切出动作的说明图。
图8为表示图7C中切出的切片状膜的立体图。
图9A为表示本发明实施方式的电子零件封装装置的切片状膜交付动作的说明图(1)。
图9B为表示本发明实施方式的电子零件封装装置的切片状膜交付动作的说明图(2)。
图10A为表示将半导体裸片吸附于本发明实施方式的电子零件封装装置的封装工具的动作的说明图。
图10B为表示利用本发明实施方式的电子零件封装装置将半导体裸片热压接于基板的动作的说明图。
图11A为表示图9B所示的热压接后的封装工具及膜回收机构的说明图。
图11B为表示本发明的电子零件封装装置的切片状膜接收动作的说明图。
图11C为表示本发明的电子零件封装装置的膜回收机构的膜进给动作的说明图。
附图标记说明
10:封装平台
11:主架台
12、86:线性导件
15:基板
20:台架框
23:脚部
24:臂
26、75:滑块
27:线性导件
30:X方向定子
35:X方向线性马达
40:X方向动子
42、62:线圈
50:Y方向定子
51:框架
52:永磁铁
53:连接构件
55:Y方向线性马达
60:Y方向动子
61:框架
65:XY方向驱动机构
70:封装头
72:主轴
73:Z方向驱动机构
74:悬吊构件
76、77、78、114、115、121、122、123:真空孔
80:副架台
81、82:柱
84、85:梁
90:控制部
100:电子零件封装装置
110:封装工具
111:基部
112:岛部
116、124:槽
118:表面
119:下表面
120:加热器
150:半导体裸片
151、154:电极
152:绝缘树脂膜
153:绝缘树脂
156:残渣
200:膜切出机构
201:基体部
201a、203a、301a:上表面
202、205:孔
203:冲头
204:夹具
204a:下表面
206:膜送出辊
207、209、303、305:中心轴
208:膜卷取辊
210:长条膜
211、212:孔
220:切片状膜
300:膜回收机构
301:平台
302:带送出辊
304:带卷取辊
310:吸附带
具体实施方式
以下,一方面参照附图一方面对本发明的实施方式进行说明。首先,一方面参照图1、图2,一方面对本实施方式的电子零件封装装置100的总体结构进行说明。
如图1所示,本实施方式的电子零件封装装置100包括:主架台11、支撑在主架台11上的台架框20、支撑于台架框20的封装头70、将台架框20在X方向上驱动的X方向线性马达35、将封装头70在Y方向上驱动的Y方向线性马达55、远离主架台11而配置的副架台80、及安装于副架台80的Y方向荷重承件54。Y方向线性马达55的Y方向定子50的一端与Y方向荷重承件54经连接构件53连接。此外,X方向、Y方向为在水平面上相互正交的方向,本实施方式中,如图1所示,将台架框20延伸的方向说明作Y方向,将与其正交的方向说明作X方向。另外,Z方向为垂直于XY面的上下方向。
如图1所示,主架台11为具有四方形状平面的架台,在其上表面安装有封装平台10、膜切出机构200及膜回收机构300,所述封装平台10真空吸附要封装作为电子零件的半导体裸片150的基板15。在主架台11上表面的相向的两边附近,彼此平行地安装有线性导件12。在线性导件12上,在X方向上移动自如地安装有滑块26。而且,在两个线性导件12的各滑块26上分别安装有台架框20的各脚部23。也就是说,台架框20以横跨主架台11上的方式在Y方向上延伸,两端的各脚部23安装于滑块26而在X方向上移动自如地受到支撑。
另外,如图1所示,本实施方式的电子零件封装装置100以包围主架台11的周围的方式而包括远离主架台11的副架台80。副架台80为包含柱81、柱82以及将柱81、柱82连接的梁84的框架。在X方向上延伸的梁84上,安装有槽形的X方向线性马达35的X方向定子30,X方向定子30相向地配置有永磁铁(未绘示)。另外,在从台架框20的脚部23延伸的臂24的前端,安装有X方向动子40,X方向动子40含有在X方向定子30的永磁铁(未绘示)之间而在X方向上移动的线圈42。X方向线性马达35的X方向动子40与各台架框20一并在X方向上移动。
如图1、图3所示,台架框20支撑封装头70。在封装头70,收纳着使在前端安装有加热器120及封装工具110的主轴72在Z方向上上下移动的Z方向驱动机构73。Z方向驱动机构73使加热器120及封装工具110上下移动,在吸附固定于封装平台10的基板15上按压半导体裸片150。如图3所示,在台架框20的内部设有空间,在台架框20的内表面的两侧安装有两根在Y方向上延伸的线性导件27。在各线性导件27分别安装有滑块75,在两个滑块75安装有封装头70的悬吊构件74。
如图1、图2所示,Y方向线性马达55的Y方向定子50经由板弹簧58而安装于台架框20的各脚部23之间。如图3所示,Y方向定子50是在槽形的框架51的内表面空开空间将永磁铁52相向地配置而成。在Y方向定子50的永磁铁52之间的空间,配置有在内部安装有线圈62且从封装头70延伸的框架61。根据所述构成,Y方向动子60与封装头70一起在Y方向上移动。
如图1、图2所示,在副架台80的梁85安装有线性导件86,在线性导件86上,在X方向上可滑动地安装有Y方向荷重承件54。Y方向荷重承件54与Y方向定子50经连接构件53连接,Y方向荷重承件54将Y方向的荷重传递至梁85。
以上那样构成的电子零件封装装置100利用X方向线性马达35使台架框20在X方向上移动,利用Y方向线性马达55使安装于台架框20的封装头70在Y方向上移动。进而,电子零件封装装置100利用安装于封装头70的Z方向驱动机构73使加热器120及封装工具110在Z方向上移动。因此,X方向线性马达35、Y方向线性马达55及台架框20作为驱动封装头70的水平方向驱动机构而构成在水平方向上的XY方向驱动机构65。另外,本实施方式的电子零件封装装置100利用远离主架台11而配置的副架台80来承受使台架框20在X方向上移动时的X方向的反作用力、及使封装头70在Y方向上移动时的Y方向的反作用力。因此,安装有封装平台10、膜切出机构200及膜回收机构300的主架台11几乎不振动。
接着,一方面参照图4,一方面对安装于主轴72的前端的加热器120及封装工具110的构成进行说明。
如图4所示,封装工具110包括四方板状的基部111、以及从基部111的下表面119以四方台座状突出的岛部112。岛部112在表面118真空吸附图3所示的半导体裸片150。岛部112比基部111更小,为与在表面118真空吸附的半导体裸片150大致相同的四方形状。在封装工具110的中心,设有用于真空吸附半导体裸片150的真空孔114。另外,在基部111的与岛部112的外周面邻接的位置设有多个真空孔115。真空孔115经设于基部111的上表面的环状的槽116相互连通。
如图4所示,加热器120例如为在氮化铝等陶瓷的内部嵌埋包含铂或钨等的发热电阻器而成的四方板状物,其大小与封装工具110的基部111大致相同。在加热器120的中心设有与封装工具110的真空孔114连通的真空孔122。另外,在加热器120的下表面设有槽124,在槽124的一端连通着将加热器120在厚度方向上贯穿的真空孔123。另外,在与封装工具110的环状的槽116连通那样的加热器120的位置,设有真空孔121。加热器120的各真空孔121、真空孔122、真空孔123在厚度方向上贯穿。
如图4所示,在主轴72上,分别在与加热器120的各真空孔121、真空孔122、真空孔123对应的位置设有真空孔76、真空孔77、真空孔78,加热器120的各真空孔121、真空孔122、真空孔123与主轴72的各真空孔76、真空孔77、真空孔78分别连通。如图4所示,当利用未图示的真空装置将真空孔78设为真空时,与真空孔78连通的真空孔123及与真空孔123连通的槽124成为真空,而将封装工具110吸附固定于加热器120的下表面。
接着,一方面参照图5,一方面对膜切出机构200的详细进行说明。膜切出机构200在将长条膜210夹入基体部201的上表面201a与夹具204的下表面204a之间的状态下使冲头203在Z方向上移动,从长条膜210中切出图8所示那样的四方的切片状膜220。如图5所示,当切出切片状膜220时,在长条膜210残留与切片状膜220相同大小的四方的孔212。
膜切出机构200包括:在中央设有四方的孔202的长方体的基体部201、配置于基体部201的上侧的四方框形状的夹具204、配置在基体部201的孔202中的冲头203、绕中心轴207旋转的圆筒状的膜送出辊206、以及配置在基体部201的与膜送出辊206相反之侧且绕中心轴209旋转的圆筒状的膜卷取辊208。在初始状态下,长条膜210卷绕于膜送出辊206,一端越过基体部201的上表面201a而延伸至膜卷取辊208,并固定于膜卷取辊208。
图5所示的基体部201的四方的孔202的形状大于参照图4所说明的四方形状的岛部112的形状。岛部112的形状为与要封装的半导体裸片150大致相同尺寸的四方形状,因此基体部201的孔202为比电子零件封装装置100要封装的半导体裸片150更大的四方形截面的孔。另外,夹具204的孔205为与基体部201的孔202相同的大小。
夹具204以下表面204a接触或离开基体部201的上表面201a的方式,通过未图示的驱动装置而在Z方向上移动。如上文中所说明那样,夹具204的孔205与基体部201的孔202为相同大小,因此当夹具204的下表面204a与基体部201的上表面201a接触时,基体部201的孔202与夹具204的孔205构成连通的一体的孔。
冲头203配置在基体部201的孔202中,在Z方向上移动。冲头203的外表面尺寸略小于孔202、孔205的内表面尺寸,为在与孔202、孔205的内表面之间形成稍许间隙的尺寸。冲头203的上表面203a为平面,且为与长条膜210接触的面。
图5所示的长条膜210为具备能耐受将半导体裸片150热压接于基板15时的温度那样的耐热性、及图10B所示的绝缘树脂153不易附着的防附着性的膜。对于长条膜210,例如合适的是聚四氟乙烯(Polytetrafluoroethylene,PTFE)、四氟乙烯-全氟烷基乙烯醚共聚物(Tetrafluoroethylene Perfluoroalkyl Vinyl Ether Copolymer,PFA)等氟树脂。另外,作为长条膜210的厚度,考虑到机械强度及向半导体裸片150的导热性而优选设为20μm~50μm左右。如图5所示,在长条膜210的宽度方向中央,以不堵塞真空孔114的方式设有孔211,真空孔114真空吸附半导体裸片150,而设于封装工具110的中央。孔211沿着长条膜210的长边方向以比孔202的长边方向长度更大的间距而设置。
另外,长条膜210只要具备耐热性及防附着性,则不限于所述氟树脂等,也适合使用除了耐热性及防附着性以外还具备通气性及防水性的无纺布或多孔的树脂材料。当使用无纺布或多孔的树脂材料时,切片状膜220不会堵塞真空吸附半导体裸片150的真空孔114,因此无需先在长条膜210设置孔211。
接着,一方面参照图6,一方面对膜回收机构300进行说明。膜回收机构300如下文将说明的图11A~图11C所示,使保持于封装工具110的表面118、下表面119的切片状膜220吸附至位于平台301的上表面301a的吸附带310,将吸附有切片状膜220的吸附带310卷取于带卷取辊304。
如图6所示,膜回收机构300包括:平板状的平台301、绕中心轴303旋转的圆筒状的带送出辊302、以及配置在平台301的与带送出辊302相反之侧且绕中心轴305旋转的圆筒状的带卷取辊304。在初始状态下,吸附带310卷绕于带送出辊302,一端越过平台301的上表面301a而延伸至带卷取辊304,并固定于带卷取辊304。另外,平台301的上表面301a为平面。
如图1所示,本实施方式的电子零件封装装置100在主架台11的内部包括控制部90,所述控制部90控制X方向线性马达35、Y方向线性马达55、Z方向驱动机构73、膜切出机构200及膜回收机构300的动作。控制部90为包含进行运算处理的中央处理器(CentralProcessing Unit,CPU)及保存控制程序、控制数据的存储部的计算机(computer)。
接下来,一方面参照图7A~图11C一方面对本实施方式的电子零件封装装置100的动作进行说明。
如图7A所示,在初始状态下,膜切出机构200的夹具204位于基体部201的上部,在基体部201的上表面201a与夹具204的下表面204a之间形成间隙。长条膜210卷绕于膜送出辊206,一端通过基体部201的上表面201a与夹具204的下表面204a之间的间隙而延伸至膜卷取辊208,并固定于膜卷取辊208。另外,收纳在基体部201的孔202的冲头203的上表面203a形成为相较于基体部201的上表面201a而在Z方向上稍降低的位置。
如图7A所示,控制部90使膜送出辊206及膜卷取辊208旋转,如图5所示,以按规定间隔设于长条膜210的孔211来到冲头203的中心的方式将长条膜210在X方向上送出。
接着,如图7B所示,控制部90使夹具204在Z方向上下降,在基体部201的上表面201a与夹具204的下表面204a之间夹入长条膜210并固定。基体部201的孔202与夹具204的孔205大小相同,孔202与孔205配置在相同位置。因此,在如图7B所示那样夹入长条膜210时,孔202与孔205构成隔着长条膜210而连通的一体的孔。
接着,控制部90如图7C所示,使冲头203在Z方向上上升直至冲头203的上表面203a超过基体部201的上表面201a而进入夹具204的孔205。由此,从长条膜210中切出与基体部201的孔205的大小大致相同的切片状膜220(参照图6)。所切出的切片状膜220在中央具有孔211。在图7C所示的状态下,所切出的切片状膜220位于平面状的冲头203的上表面203a。
切片状膜220的切出结束后,如图9A所示,控制部90使X方向线性马达35、Y方向线性马达55及Z方向驱动机构73驱动,以封装工具110的真空孔114成为图8所示的切片状膜220的孔211的位置的方式调整XY方向的位置,使封装工具110的表面118下降至冲头203的上表面203a。然后,如图9B所示,控制部90利用未图示的真空装置将主轴72的真空孔76设为真空。于是,封装工具110的上表面的槽116通过与真空孔76连通的真空孔121而成为真空,与槽116连通的多个真空孔115成为真空。由此,如图9B所示,位于冲头203的上表面203a的切片状膜220以覆盖岛部112的表面118、岛部112的侧面、基部111的下表面119的方式吸附于封装工具110的Z方向下侧。此外,封装工具110的真空孔114因存在切片状膜220的孔211而未被堵塞。
如图9B所示,控制部90在切片状膜220从冲头203的上表面203a向封装工具110的下侧表面的交付完成之后,使膜送出辊206及膜卷取辊208旋转,如图5所示,将长条膜210的经切取切片状膜220的含有孔212的部分卷取于膜卷取辊208,从膜送出辊206将新的长条膜210送出至基体部201、冲头203上。
如图10A所示,控制部90驱动X方向线性马达35、Y方向线性马达55而使封装工具110移动至半导体裸片150上,利用Z方向驱动机构73使封装工具110下降至半导体裸片150的上表面。然后,当将真空孔77设为真空时,与真空孔77连通的封装工具110的真空孔114成为真空,半导体裸片150经由切片状膜220而真空吸附于表面118。如图10A所示,在半导体裸片150的要进行热压接的面形成有电极151,在电极侧面贴附有绝缘树脂膜152。
如图10B所示,控制部90驱动X方向线性马达35、Y方向线性马达55而使封装工具110移动至基板15的封装位置的正上方。另外,控制部90使加热器120接通而将半导体裸片150的温度加热至250℃~300℃左右。然后,控制部90利用Z方向驱动机构73使封装工具110下降,使半导体裸片150的电极151热压接于基板15的电极154,并且使半导体裸片150与基板15之间的绝缘树脂膜152热硬化而作为绝缘树脂153将间隙密封。此时,绝缘树脂153的一部分在半导体裸片150的周围渗出,绝缘树脂153到达封装工具110的岛部112侧面。但是,此部分的表面由切片状膜220所覆盖,因此绝缘树脂153不会附着于封装工具110的表面。
将半导体裸片150以规定时间热压接于基板15后,控制部90解除真空孔77、真空孔114的真空而解除半导体裸片150的吸附,使加热器120断开并利用Z方向驱动机构73使封装工具110上升,驱动X方向线性马达35、Y方向线性马达55,如图11A所示,使封装工具110移动至膜回收机构300的平台301的正上方。此时,在切片状膜220的表面,附着有绝缘树脂153的残渣156。
接着,如图11B所示,控制部90使Z方向驱动机构73动作而使封装工具110下降至膜回收机构300的平台301上,解除真空孔76、槽116、真空孔115的真空。于是,通过切片状膜220的真空孔115而吸附于基部111的下表面119的部分离开下表面119。另外,切片状膜220的覆盖封装工具110的表面118的部分吸附于吸附带310的表面。吸附带310只要具有比封装工具110的表面118保持切片状膜220的附着力、引力等更大的粘着力、吸附力即可,例如也可设为胶带等。
如图11C所示,当控制部90使Z方向驱动机构73动作而使封装工具110上升时,吸附于吸附带310上的切片状膜220以经吸附的状态而残留。然后,控制部90在吸附带310从封装工具110的下侧的表面118、下表面119接收切片状膜220后,如图6、图11C所示,驱动带送出辊302及带卷取辊304而将吸附有切片状膜220的部分卷入带卷取辊304,从带送出辊302将吸附带310的新吸附面送出至平台301的上表面301a上。
如以上所说明那样,根据本实施方式的电子零件封装装置100,通过使切出的切片状膜220吸附于封装工具110的表面118、下表面119,经由切片状膜220使半导体裸片150热压接于基板15,从而能够在不对在XY方向上移动的封装头70搭载重量大的膜搬送机构的情况下,抑制绝缘树脂153附着于封装工具110。进而,能够一方面抑制绝缘树脂153附着于封装工具110一方面使封装头70高速移动,而能够缩短半导体裸片150的封装时间。
另外,本实施方式的电子零件封装装置100无需如专利文献1所记载的现有技术的膜搬送机构那样,一直在封装工具110的表面118侧配置辊状的膜,因此能够根据要进行热压接的半导体裸片150的种类而简单地更换封装工具110。另外,也可在未使切片状膜220吸附的状态下利用玻璃标记(glass mark)来进行位置修正等附带动作,而能够提高封装精度。
以上所说明的电子零件封装装置100的膜回收机构300以将切片状膜220吸附于吸附带310并回收的形式进行了说明,但不限于此,例如也可在平台301的上表面301a配置真空抽吸孔,以比封装工具110的表面118的保持切片状膜220的附着力、引力等更大的力进行真空抽吸,真空抽吸切片状膜220并回收。另外,也可将封装工具110的前端放入在下侧的面配置有真空抽吸孔的箱中,解除封装工具110的真空孔115的真空并且将箱内设为真空,将切片状膜220吸入箱中并回收。
另外,以本实施方式的电子零件封装装置100的膜切出机构200的冲头203的上表面203a为平面的形式进行了说明,但也可在图5所示的孔211的位置配置顶针。而且,也可在使冲头203上升而从长条膜210中切出切片状膜220时,利用顶针在长条膜210开出孔211后,以顶针进入封装工具110的真空孔114的方式,使封装工具110下降至冲头203的上表面203a,将真空孔115设为真空而将切片状膜220从冲头203的上表面203a交付至封装工具110的表面118、下表面119。
另外,所述说明中,以在基板15上热压接半导体裸片150的形式进行了说明,但本发明也可适用于在基板15上热压接半导体裸片150后,在此半导体裸片150上热压接其他半导体裸片的情况。
进而,所述说明中,以在半导体裸片150的电极侧面贴附绝缘树脂膜152,在将半导体裸片150热压接于基板15时使半导体裸片150与基板15之间的绝缘树脂膜152热硬化而作为绝缘树脂153将间隙密封的形式进行了说明,但也可代替绝缘树脂膜152而将绝缘树脂糊涂布于半导体裸片150的电极侧面,在热压接半导体裸片150时使所述绝缘树脂糊热硬化而制成绝缘树脂153。另外,也可将绝缘树脂糊涂布于基板15的表面,在热压接半导体裸片150使所述绝缘树脂糊热硬化而制成绝缘树脂153。本实施方式的电子零件封装装置100使切出的切片状膜220吸附于封装工具110的表面118、下表面119,经由切片状膜220使半导体裸片150热压接于基板15,因此在任一情况下均能够抑制绝缘树脂153附着于封装工具110。
Claims (4)
1.一种电子零件封装装置,将电子零件热压接于基板或其他电子零件,并且利用绝缘树脂将所述电子零件与所述基板的间隙或所述电子零件与所述其他电子零件的间隙密封,且所述电子零件封装装置的特征在于包括:
膜切出机构,使长条膜的末端在宽度方向上残留而切出切片状膜;以及
封装工具,具有基部与岛部,其中所述岛部以第一真空孔而经由所述切片状膜真空吸附所述电子零件,并将所述电子零件经由所述切片状膜而热压接于所述基板或所述其他电子零件,所述基部以形成于所述岛部外侧的第二真空孔吸附所述切片状膜,且所述岛部自所述基部突出,
所述膜切出机构包括:
基体部;
膜送出辊,配置在所述基体部的一侧,所述长条膜卷绕于所述膜送出辊上;以及
膜卷取辊,配置在所述基体部的另一侧,所述长条膜固定于所述膜卷取辊,
所述膜送出辊供给所述长条膜,且所述膜卷取辊回收被切出了所述切片状膜的所述长条膜,
其中所述切片状膜自所述长条膜分离,所述岛部的表面经由所述岛部的侧表面而连接至所述基部的下表面,且所述切片状膜以覆盖所述岛部的所述表面与所述侧表面以及所述基部的所述下表面的方式吸附至所述封装工具的底侧。
2.根据权利要求1所述的电子零件封装装置,其特征在于包括:
膜回收机构,从所述封装工具的表面接收所述切片状膜。
3.根据权利要求1所述的电子零件封装装置,其特征在于,
所述膜切出机构的所述基体部具有形状比所述岛部的平面形状更大的孔;
所述膜切出机构更包括:
夹具,具有与所述基体部相同形状的孔,在与所述基体部之间夹入所述长条膜;以及
冲头,脱出或插入所述基体部的孔及所述夹具的孔,从所述长条膜中切出所述切片状膜,
所述冲头的与所述长条膜接触的面为使所述切片状膜交付至所述封装工具的表面的平面。
4.根据权利要求2所述的电子零件封装装置,其特征在于,
所述膜回收机构包括:
平板状的平台;以及
吸附带,沿着所述平台的面移动而从所述封装工具的表面依次接收所述切片状膜。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/012518 WO2018179074A1 (ja) | 2017-03-28 | 2017-03-28 | 電子部品実装装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110709971A CN110709971A (zh) | 2020-01-17 |
CN110709971B true CN110709971B (zh) | 2023-07-25 |
Family
ID=63674593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780090036.5A Active CN110709971B (zh) | 2017-03-28 | 2017-03-28 | 电子零件封装装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11373975B2 (zh) |
KR (1) | KR102237061B1 (zh) |
CN (1) | CN110709971B (zh) |
SG (1) | SG11201910017WA (zh) |
WO (1) | WO2018179074A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7346190B2 (ja) * | 2019-09-17 | 2023-09-19 | キオクシア株式会社 | 半導体製造装置 |
KR102619955B1 (ko) * | 2020-07-16 | 2024-01-02 | 가부시키가이샤 신가와 | 실장 장치 |
US11961817B2 (en) * | 2021-02-26 | 2024-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for forming a package structure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1577778A (zh) * | 2003-07-22 | 2005-02-09 | 株式会社东芝 | 半导体器件的制造方法及半导体制造装置 |
KR20150049468A (ko) * | 2013-10-30 | 2015-05-08 | 하나 마이크론(주) | 전자 부품의 제조 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3594120B2 (ja) * | 1999-10-28 | 2004-11-24 | シャープ株式会社 | 半導体装置の製造方法及びボンディング用加圧治具 |
JP4471563B2 (ja) * | 2002-10-25 | 2010-06-02 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2006229126A (ja) * | 2005-02-21 | 2006-08-31 | Canon Inc | Icチップの接続装置 |
JP4539454B2 (ja) * | 2005-06-20 | 2010-09-08 | パナソニック株式会社 | 電子部品の熱圧着ツールおよび電子部品の実装装置ならびに実装方法 |
JP4958817B2 (ja) | 2008-03-07 | 2012-06-20 | 芝浦メカトロニクス株式会社 | 電子部品の実装装置 |
JP5612963B2 (ja) * | 2010-08-20 | 2014-10-22 | 新光電気工業株式会社 | 電子部品実装装置および電子部品実装方法 |
JP6151601B2 (ja) * | 2013-08-08 | 2017-06-21 | 東レエンジニアリング株式会社 | 実装装置 |
JP6040382B2 (ja) * | 2014-12-16 | 2016-12-07 | 株式会社新川 | 実装装置 |
JP6307729B1 (ja) * | 2016-11-30 | 2018-04-11 | 株式会社新川 | ボンディング装置及びボンディング方法 |
KR102592226B1 (ko) * | 2018-07-17 | 2023-10-23 | 삼성전자주식회사 | 반도체 패키지 본딩헤드 및 본딩방법 |
-
2017
- 2017-03-28 WO PCT/JP2017/012518 patent/WO2018179074A1/ja active Application Filing
- 2017-03-28 KR KR1020197031602A patent/KR102237061B1/ko active IP Right Grant
- 2017-03-28 SG SG11201910017W patent/SG11201910017WA/en unknown
- 2017-03-28 CN CN201780090036.5A patent/CN110709971B/zh active Active
- 2017-03-28 US US16/496,456 patent/US11373975B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1577778A (zh) * | 2003-07-22 | 2005-02-09 | 株式会社东芝 | 半导体器件的制造方法及半导体制造装置 |
KR20150049468A (ko) * | 2013-10-30 | 2015-05-08 | 하나 마이크론(주) | 전자 부품의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
WO2018179074A1 (ja) | 2018-10-04 |
US20200373275A1 (en) | 2020-11-26 |
KR20190135020A (ko) | 2019-12-05 |
KR102237061B1 (ko) | 2021-04-08 |
SG11201910017WA (en) | 2019-11-28 |
US11373975B2 (en) | 2022-06-28 |
CN110709971A (zh) | 2020-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11024596B2 (en) | Bonding apparatus and bonding method | |
CN110709971B (zh) | 电子零件封装装置 | |
CN103101283B (zh) | 真空层叠系统及真空层叠成形方法 | |
JP5273791B2 (ja) | 基板への接着テープ貼り付け装置 | |
JP5368200B2 (ja) | 加工装置 | |
KR102117726B1 (ko) | 압착 장치 및 압착 방법 | |
KR102497661B1 (ko) | 실장 장치 및 실장 방법 | |
JP6151601B2 (ja) | 実装装置 | |
JP5602439B2 (ja) | 加熱装置および実装体の製造方法 | |
CN109314062B (zh) | 管芯的安装方法 | |
TWI655699B (zh) | Electronic component mounting device | |
TWI687463B (zh) | 聚四氟乙烯片以及晶粒封裝方法 | |
JP2018010977A (ja) | 半導体装置の製造方法および製造装置 | |
JP2009206166A (ja) | 半導体装置の製造方法 | |
JP2019040941A (ja) | 基板への接着テープ貼り付け装置及び貼り付け方法 | |
US20220415845A1 (en) | Mounting apparatus | |
KR20210122131A (ko) | 디바이스 밀봉 방법, 디바이스 밀봉 장치, 및 반도체 제품의 제조 방법 | |
TW202411148A (zh) | 片材的定位裝置、定位方法、及對於電子零件之遮罩層的形成方法 | |
JP2015115348A (ja) | 封止シート貼付け方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |