CN1577778A - 半导体器件的制造方法及半导体制造装置 - Google Patents

半导体器件的制造方法及半导体制造装置 Download PDF

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CN1577778A
CN1577778A CNA2004100697360A CN200410069736A CN1577778A CN 1577778 A CN1577778 A CN 1577778A CN A2004100697360 A CNA2004100697360 A CN A2004100697360A CN 200410069736 A CN200410069736 A CN 200410069736A CN 1577778 A CN1577778 A CN 1577778A
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film
semiconductor
semiconductor element
bonding
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CN1296978C (zh
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黑泽哲也
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Toshiba Corp
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Abstract

抑制尤其是薄型化的半导体晶片的切片时产生的碎裂，降低从切片工序至粘接工序的半导体器件的不良发生率。半导体制造装置(11)具有：从半导体晶片(16)中拾取个片化的半导体元件的拾取部(12)；按照半导体元件形状将个片化的元件粘接用薄膜粘贴在半导体元件的背面部的薄膜粘贴部(13)；以及，将半导体元件粘接在半导体器件形成用基材上的元件粘接部(14)。

Description

半导体器件的制造方法及半导体制造装置
技术领域
本发明涉及半导体器件的制造方法及半导体制造装置。
背景技术
半导体器件的制造工序可以大致分为在半导体晶片(半导体衬底)的表面部形成各种元件图形的工序、和将半导体晶片分离成各个半导体元件并用封装件将这些半导体元件封装的工序。近年来，为了谋求半导体器件制造成本的降低，正在推进晶片的大口径化。另外，为了能够高密度地安装半导体元件，正在进行半导体晶片的薄型化。
参照图18说明现有半导体晶片的切片工序。例如，像专利文献1或专利文献2中的记述那样，准备表面部1a形成了元件图形的半导体晶片1(图18-A)。通过机械磨削将这种半导体晶片1的背面部1b磨削至规定厚度(图18-B)。并且，在机械磨削后有时进行腐蚀(湿腐蚀、气体腐蚀)或CMP等。另外，也有预先从半导体晶片的表面侧形成沟槽、并磨削这种半导体晶片的背面侧的方法(参照专利文献3)。
其次，在半导体晶片1的背面部1b上依次小片粘贴粘贴用薄膜(小片贴附薄膜等)2和切片用胶带3(图18-C)。切片用胶带3粘贴在晶片圈4上。然后，用刀片5等进行机械切割，将半导体晶片1切断，形成各个半导体元件6、6…。此时，由于小片粘贴用薄膜2也被切断，所以制作出粘贴有小片粘贴用薄膜2的半导体元件6(图18-D)。切片用胶带3从其表面侧只被切断一部分，保持半导体元件6的状态得以维持。
如此，在现有的半导体晶片1的切片工序中，小片粘贴用薄膜2和切片用胶带3的一部分也被切断。因此，容易引发刀片5的刀刃被堵，使刀刃变钝。这将使半导体元件6的背面部产生大的碎裂(欠缺)，成为半导体元件6的不良原因。特别是在为了进行高密度地安装而薄型化了的半导体元件6中，背面部的碎裂容易到达元件区域，所以导致不良发生率的增加。对于碎裂到达了元件区域的半导体元件来说，元件功能本身也被损坏。
在切片工序中被个片化的半导体元件6分别被拾取后供往粘贴工序。
经过切片工序后的半导体元件6的背面部粘贴在切片用胶带3上。因此，例如像图19那样，通过用吸附夹套7将半导体元件6保持后从背面侧推压几根顶针8的方法将半导体元件6从切片用胶带3中剥离。半导体元件6的背面部若产生碎裂，则顶压半导体元件6的背面部时的应力会使碎裂发展，有可能会使半导体元件6产生裂纹。
被拾取的半导体元件6被粘接在引线框架或基板等各种外围器具上。最近还利用将薄型化的半导体元件6叠层多层的方法提高安装密度。在这种多层叠层中，例如像图20那样，有时以使上部的半导体元件6从下部的半导体元件6的外形中探出的方式叠层。半导体元件6的背面部若产生碎裂，则引线键合时的负荷会使碎裂发展，可能会使半导体元件6产生裂纹。
在专利文献4中记述了防止将粘贴用粘合剂加热压接在薄型化的半导体晶片的背面时产生裂纹和翘起的粘合剂薄膜。在此，虽然防止加热压接粘合剂薄膜时产生的裂纹与翘起，但切片时粘合剂薄膜与半导体晶片一起被切断。因此，粘合剂薄膜使刀片变钝，从而使半导体元件的背面部容易产生大的碎裂，这一点与专利文献1和专利文献2相同。
专利文献1特开平8-51142号公报
专利文献2特开2002-256235号公报
专利文献3特开2001-35817号公报
专利文献4特开2000-104040号公报
如上所述，在现有的半导体晶片的切片工序中，将粘贴在半导体晶片背面部的粘贴用薄膜与半导体晶片一起切断。因此，粘贴用薄膜引发切断用刀片的刀刃被堵，使刀刃变钝，从而使半导体元件的背面部容易产生大的碎裂。大的碎裂会成为半导体元件的不良原因。
尤其是在薄型化的半导体元件中，不但背面部的碎裂容易到达元件区域，而且在其后的拾取工序和安装工序中碎裂容易发展，所以导致半导体元件的不良发生率的增加。本发明就是以抑制半导体晶片、尤其是薄型化的半导体晶片的切片时产生的背面侧的碎裂引起的半导体元件的不良发生为课题的。即，以降低半导体器件的制造方法及半导体制造装置中的从切片工序至粘贴工序的不良发生率为课题。
发明内容
作为本发明一实施方式的半导体器件的制造方法的特征在于，包括：一边从表面部形成了元件区域的半导体晶片中将半导体元件个片化，一边形成用保持部件保持个片化的上述半导体元件的状态的工序；从上述保持部件中拾取上述个片化的半导体元件的工序；按照上述半导体元件的形状将个片化的元件粘接用薄膜粘贴在被拾取的上述半导体元件的背面部的工序；以及，使用上述元件粘接用薄膜将上述半导体元件粘接在半导体器件形成用基材上的工序。
作为本发明一实施方式的半导体制造装置的特征在于，具有：从用保持部件保持个片化的半导体元件的半导体晶片中拾取上述个片化的半导体元件的拾取部；按照上述半导体元件的形状将个片化的元件粘接用薄膜粘贴在上述被拾取的上述半导体元件的背面部的薄膜粘贴部；以及，将粘贴了上述元件粘接用薄膜的上述半导体元件粘接在半导体器件形成用基材上的元件粘接部。
按照本发明的半导体器件的制造方法及半导体制造装置，可以抑制在切片工序中半导体元件的背面部产生碎裂。因此能够降低半导体晶片的切片工序、以及其后的拾取工序和粘贴工序等中的不良发生率。
附图说明
图1是示意地表示本发明一实施例的半导体制造装置的概略结构的立体图。
图2是表示用保持部件保持个片化的半导体元件的半导体晶片的一例的剖面图。
图3是表示本发明一实施例的切片工序的一例的图。
图4是表示本发明一实施例的切片工序的另一例的图。
图5是表示本发明一实施例的抬取工序的一例的图。
图6是表示图1所示半导体制造装置的元件粘接用薄膜的切断工序的一例的侧面图。
图7是表示图1所示半导体制造装置的元件粘接用薄膜的切断工序的一例的立体图。
图8是表示图1所示半导体制造装置的元件粘接用薄膜的切断工序的另一例的侧面图。
图9是表示图1所示半导体制造装置的元件粘接用薄膜的切断工序的另一例的立体图。
图10是表示图9的变形例的立体图。
图11是表示使用了图1所示的半导体制造装置的半导体元件的粘接结构的一例的立体图。
图12是表示使用了图1所示的半导体制造装置的半导体元件的粘接结构的另一例的立体图。
图13是表示使用了图1所示的半导体制造装置的半导体元件的粘接结构的又一另一例的立体图。
图14是表示图11的变形例的立体图。
图15是示意地表示本发明的其它实施例的半导体制造装置的概略结构的立体图。
图16是表示图15所示的半导体制造装置的保护薄膜的剥离部的一结构例的剖面图。
图17是表示图15所示的半导体制造装置的保护薄膜的剥离部的另一结构例的剖面图。
图18是表示现有的切片工序的一例的图。
图19是表示现有的拾取工序的一例的图。
图20是现有的半导体元件的粘接结构的一例的立体图。
标号说明
11       半导体制造装置
12       拾取部
13       薄膜粘贴部
14       元件粘接部
16       具有个片化的半导体元件的半导体晶片
21       半导体元件
22       保持胶带
24       半导体晶片
31、51   吸附套抓
41、47   元件粘接用薄膜
45       机械式切断机
46、48   吸附部件
49       激光照射部
52       衬底
具体实施方式
按照本发明的半导体器件的制造方法及半导体装置的一实施例，首先将表面部形成了元件区域的半导体晶片切断，分成各个小片的半导体元件。在这种状态下，半导体元件由保持部件保持。其次，按每个元件从保持部件拾取半导体元件后，将按照元件形状个片化的元件粘接用薄膜粘贴在半导体元件的背面部。之后，利用粘贴在半导体元件的背面部的元件粘接用薄膜将半导体元件粘接在半导体器件形成用基材上。
在本发明的一实施例中，作为保持部件，使用粘性胶带等保持胶带。此外，也可以使用利用真空吸引等保持半导体元件的保持台，以取代保持胶带。作为元件粘接用薄膜可以使用小片贴附薄膜等热可塑性或热固化性树脂薄膜。作为粘接半导体元件的半导体器件形成用基材可以使用引线框架、布线基板、散热基板等各种外围器件。另外，将半导体元件叠层多层时，例如粘接在衬底上的半导体元件就成为半导体器件形成用基材。
按照本发明的一实施例，从半导体晶片中将各个半导体元件个片化之后，各个半导体元件的背面部粘贴有按照元件形状个片化的元件粘接用胶带。即，对半导体晶片进行切片时，不切断至小片贴附薄膜等元件粘接用胶带。由此，可以抑制切片工序中的元件背面部的碎裂。因此，可以大幅度地降低半导体晶片的切片工序、以及其后的拾取工序和粘贴工序等中的半导体元件的不良发生率。
作为本发明的实施例的半导体器件的制造方法，其作为半导体元件的个片化工序具有：将保持部件粘贴在半导体晶片的背面部以后，将半导体晶片切断，维持着用保持部件保持半导体元件的状态进行个片化的工序。在本发明的另一实施例中，作为半导体元件的个片化工序具有：从半导体晶片的表面部侧形成比完成时的元件厚度深的沟槽或改性层的工序；将第一保持部件粘贴在半导体晶片的表面部以后，磨削及研磨半导体晶片的背面部侧，维持着用第一保持部件保持半导体元件的状态进行个片化的工序；以及，将第二保持部件粘贴在半导体元件的背面部，同时剥离第一保持部件的工序。
作为本发明的实施例的半导体器件的制造方法还具有：从将长的元件粘接用薄膜卷起的供给滚筒供给元件粘接用薄膜，利用机械切断或激光切断，按照半导体元件的形状将该长的元件粘接用薄膜切断，进行个片化的工序。在本发明的另一实施例中，作为元件粘接用薄膜的粘贴工序具有：用多孔质状吸附部件保持个片化的元件粘接用薄膜，并将该被吸附部件保持的元件粘接用薄膜粘贴在半导体元件的背面侧的工序。
作为本发明的另一实施例的半导体制造装置具有薄膜粘贴部，该薄膜粘贴部包括：从将长的元件粘接用薄膜卷起的供给滚筒供给元件粘接用薄膜的薄膜供给部；以及，利用机械切断或激光切断，按照半导体元件的形状将从供给滚筒供给的元件粘接用薄膜切断的薄膜切断部。薄膜切断部例如具有保持元件粘接用薄膜的吸附部件、和将由吸附部件保持的元件粘接用薄膜冲切切断的切断机。
在本发明的另一实施例中，薄膜切断部具有：保持元件粘接用薄膜的吸附部件、将保持在吸附部件上的元件粘接用薄膜切断的激光切断机、以及按照上述半导体元件的形状移动激光切断机或吸附部件的移动机构。在这些实施例中，吸附部件例如由多孔质金属构成。吸附部件也可以由多孔质陶瓷等形成。
作为本发明的另一实施例的半导体制造装置具有拾取部，该拾取部包括：保持半导体元件的吸附夹套；以及从背面侧将保持在吸附夹套的半导体元件顶起，将其从保持部件中剥离的顶起机构。在该实施例中，吸附夹套例如由多孔质金属构成。吸附夹套也可以由多孔质陶瓷等形成。在又一另一实施例中，具有将粘贴在半导体元件上的元件粘接用薄膜的设在背面部侧的保护薄膜剥离的薄膜剥离部。
下面，参照附图说明本发明的半导体器件的制造方法及半导体制造装置的实施例。图1是表示本发明一实施例的半导体制造装置的概略结构的图。
该图所示的半导体制造装置11具有拾取部12、薄膜粘贴部13、以及元件粘接部14。在拾取部12的台15上放置半导体晶片16。如图2所示，半导体晶片16具有个片化的多个半导体元件21、21…，并用保持胶带22将这些半导体元件21保持。保持胶带22粘在晶片圈23上。
这种半导体晶片16通过图3或图4所示的切片工序而制作。首先说明图3所示的切片工序。如图3(A)所示，准备表面部24a形成了元件区域的半导体晶片24。如图3(B)所示，利用机械磨削等将该半导体晶片24的背面部24b磨削至规定的厚度。另外，在机械磨削之后也可以进行湿腐蚀、气体腐蚀、CMP、抛光、RIE、等离子处理等。磨削及研磨后的半导体晶片24的厚度根据完成时的元件厚度来设定。
其次，在进行了磨削和研磨加工的半导体晶片24的背面部24b上作为保持胶带22而粘贴切片用胶带。切片用胶带22粘在晶片圈23上。其次，如图3(C)所示，利用刀片25等机械地切割半导体晶片24，将其切断，将各个半导体元件21分别个片化。如此制作既维持用保持胶带22保持半导体元件21的状态又将半导体元件21个片化的半导体晶片16。
在上述半导体晶片24的切片工序中，切片用胶带22的表面侧的一部分同半导体晶片24一起被切断。可是由于不像现有的切片工序那样同时切断小片粘贴用胶带，所以刀片25的刀刃被堵会大幅度地降低。因此可以大幅度地抑制半导体元件21的背面部的碎裂的产生。即，因为能够维持刀片25的锋利，所以能够抑制因刀片变钝而引起的碎裂的产生。
尤其在半导体元件21的完成厚度小于等于200μm、进而大于等于20μm小于等于100μm那样的薄型化(厚度变薄)的半导体元件21中，因刀片25的刀刃被堵而引起的刀刃变钝会给碎裂的产生带来很大的影响。例如，即使是50μm左右的碎裂也容易到达元件区域，所以也会成为半导体元件21的不良原因。甚至，即使是10μm左右的碎裂，在后工序中施加应力时碎裂也会发展而容易产生裂纹。这也会成为半导体元件21的不良原因。按照图3所示的切片工序可以抑制成为不良原因的碎裂的产生。
其次，说明图4所示的切片工序。与图3所示的切片工序一样，准备表面部24a形成了元件区域的半导体晶片24。如图4(A)所示，利用刀片25等在半导体晶片24的表面部24a上形成规定深度的沟槽26。沟槽26的深度设定得比完成时的元件厚度深。沟槽26可以利用刻蚀等形成。另外，也可以对半导体晶片24的表面部24a照射激光，形成改性层，以取代用机械磨削或刻蚀形成的沟槽26，该改性层的作用与沟槽26相同。改性层的深度与沟槽26相同。
如图4(B)所示，在形成了沟槽26的半导体晶片24的表面部24a上作为第一保持部件粘贴表面保护胶带27之后，通过机械磨削等将半导体晶片24的背面部24b磨削至沟槽26。另外，在机械磨削之后可以进行湿腐蚀、气体腐蚀、CMP、抛光、RIE、等离子处理等。通过进行至沟槽26的磨削及研磨工序，既维持用表面保护胶带27保持半导体元件21的状态，又分别将半导体元件21个片化。
在此之后，如图4(C)所示，在个片化的半导体元件21的背面部侧作为第二保持部件粘贴保持胶带22之后，剥离表面保护胶带27。保持胶带22可以使用拾取胶带等。如此制作既维持用保持胶带22保持半导体元件21的状态又将半导体元件21个片化的半导体晶片16。通过先进行半导体晶片24的切片，能够进一步抑制半导体元件21的背面部的碎裂的产生。因此，能够获得几乎没有碎裂的半导体元件21。
也可以不将具有个片化的半导体元件21的半导体晶片16粘贴在保持胶带上，而是将其贴在利用真空吸引等保持半导体元件21的保持台、例如具有分成两块或两块以上吸附区的由多孔质体构成的吸附部的保持台上。这种保持台的吸附区按照半导体元件的形成排列而设置。各吸附区具有两套真空排气系统，即吸附保持半导体晶片16直到剥离表面保护胶带27为止的第一真空排气系统、和吸附保持剥离表面保护胶带27之后的半导体元件21的第二真空排气系统，并切换着使用这两套真空排气系统。以能够拾取半导体元件21的方式设定第二真空排气系统。
将上述具有个片化的半导体元件21的半导体晶片16放置在拾取部12的台15上，在该拾取部12中将个片化的半导体元件21按每个元件从保持胶带22剥离后拾取。如图5所示，拾取台15的上方具有保持半导体元件21的第一吸附夹套31，且配置了将半导体元件21移至薄膜粘贴部13的移动机构32。拾取台15的下方，配置了从背面侧将半导体元件21顶起，将其从保持胶带22剥离的顶起机构33。
第一吸附夹套31例如由多孔质金属构成，能够用整个面(平面)吸附保持半导体元件21。通过用整个面吸附保持薄型化的半导体元件21，可以抑制裂纹或翘起等的发生。也可以在第一吸附夹套31或支持其的轴部内置加热器等加热机构。这样可以提高半导体元件21与后述的元件粘接用薄膜的粘接性。另外，顶起机构33具有从背面侧将半导体元件21顶起的几根顶针34。
一边使由如上所述的第一吸附夹套31吸附保持的半导体元件21上升，一边从其背面侧顶压顶针34，从而将半导体元件21从保持胶带22中剥离。如此被拾取的半导体元件21被具有第一吸附夹套31的移动机构32送至薄膜粘贴部13。另外，若使用真空吸引式保持台来作为第二保持部件，则拾取半导体元件21时可以不使用顶起机构33。
薄膜粘贴部13具有按照半导体元件21的形状切断元件粘接用薄膜而将其个片化的薄膜切断机构。作为薄膜切断机构，例如可以使用图6及图7所示的机械式切断机构、或图8及图9所示的激光式切断机构等。图6及图7所示的机械式切断机构具有将具有规定宽度的长的元件粘接用薄膜41卷成卷状的供给滚筒(图中未示)，以此作为薄膜供给部。元件粘接用薄膜41可以使用小片贴附薄膜等热可塑性或热固化性的树脂薄膜。
从供给滚筒供给的元件粘接用薄膜41被送至薄膜切断位置。在薄膜切断位置设置了切断机45，该切断机45包括：具有与元件形状对应的通孔的上下一对框模42、43；以及，从下方插入框模42、43的通孔内，切断元件粘接用薄膜41的冲切模44。冲切模44的前端部设置有保持元件粘接用薄膜41的吸附部件46。吸附部件46例如由多孔质金属构成，能够用整个面(平面)保持元件粘接用薄膜41。冲切模44或吸附部件46可以内置加热器等加热机构。元件粘接用薄膜41的固定部件可以使用各种形状的模具等。
在这种具有机械式薄膜切断机构的薄膜粘贴部13中，首先如图6(A)及图7(A)所示，用上下框模42、43将送至薄膜切断位置的长的元件粘接用薄膜41夹住。其次，如图6(B)及图7(B)所示，使冲切模44从框模43的下方上升，按照半导体元件21的形状切断长的元件粘接用薄膜41。这样，按照半导体元件21的形状制作个片化的元件粘接用薄膜47。这时，利用吸附部件46真空吸引小片状元件粘接用薄膜47，以提高冲切性，并且在冲切后使其不从吸附部件46中脱落。
其次，如图6(C)及图7(C)所示，用检测器读出保持在第一吸附夹套31上的半导体元件21和保持在吸附部件46上的小片状元件粘接用薄膜47的位置，对这些位置进行修正后，将半导体元件21放置在小片状元件粘接用薄膜47上，进行压接。即，如图6(D)及图7(D)所示，制作背面部粘贴了小片状元件粘接用薄膜47的半导体元件21。根据需要，一边用内置于第一吸附夹套31或冲切模44内的加热器加热小片状元件粘接用薄膜47，一边进行压接。
图8及图9所示的激光式切断机构与机械式切断机构一样，具有将具有规定宽度的长的元件粘接用薄膜41卷成卷状的供给滚筒(图中未示)，以作为薄膜供给部。从供给滚筒供给的元件粘接用薄膜41被送至薄膜切断位置。在薄膜切断位置设置有真空吸附并保持元件粘接用薄膜41的吸附部48与激光照射部49。激光照射部49可以通过未图示的移动机构按照元件形状移动。另外，也可以做成吸附部48侧可以移动的结构。
另外，有可能伴随激光切断而产生气体时，在吸附部48的周围设置吸引单元50。吸附部48与吸引单元50之间设置有引导激光的沟槽。吸附部48与上述机械式切断机构一样，由多孔质金属等构成，可以用整个面(平面)保持元件粘接用薄膜41。另外，吸附部48也可以内置加热器等加热机构。
在具有激光式薄膜切断机构的薄膜粘贴部13中，首先如图8(A)所示，用吸附部48真空吸引并保持被送至薄膜切断位置的长的元件粘接用薄膜41。如图8(B)及图9(B)所示，将保持在第一吸附夹套31上的半导体元件21放置在保持在吸附部48上的元件粘接用薄膜41上。在维持真空吸引半导体元件21的状态下按照元件形状移动激光照射部49，从而按照半导体元件21的形状切断长的元件粘接用薄膜41。如图10所示，也可以移动吸附部48侧，按照元件形状切断元件粘接用薄膜41。
这样，按照半导体元件21的形状切断元件粘接用薄膜41，将其个片化。之后，通过对半导体元件21和小片状元件粘接用薄膜47进行压接或根据需要进行加热压接，如图8(C)及图9(C)所示，制作背面部粘贴了小片状元件粘接用薄膜47的半导体元件21。另外，图8(D)及图9(D)表示移动半导体元件21之后的状态。也可以在放置半导体元件21之前单独地切断元件粘接用薄膜41。
在上述利用各切断机构的元件粘接用薄膜47的压接(粘贴)工序中，将按照元件形状个片化的元件粘接用薄膜47粘贴在抑制了碎裂产生的半导体元件21的背面部。因此，不会像用同时切断元件粘接用薄膜与半导体晶片的方法来个片化的现有工序那样因元件粘接用薄膜47的个片化而使半导体元件21的背面部产生碎裂。由此，可以降低因碎裂而引起的半导体元件的不良发生率。尤其能够大幅度地降低薄型化的半导体元件21的不良发生率。
另外，在上述元件粘接用薄膜47的压接(粘贴)工序中，由于半导体元件21和元件粘接用薄膜47都以维持平面状态的方式被真空吸引，所以可以抑制压接时产生的半导体元件21的裂纹或翘起、以及粘贴面产生的未粘接部(空孔)。产生未粘接部(空孔)会导致半导体元件21的散热性降低。通过降低以及排除这种不良因素，可以提高半导体元件21以及使用其的半导体器件的制造成品率。
粘贴了元件粘接用薄膜47的半导体元件21由再次检测器检测位置并进行位置修正后，如图6(E)及图7(E)所示，被第二吸附夹套51吸引保持着送至元件粘接部14。第二吸附夹套51设置在元件粘接部14的移动机构的前端，具体结构与第一吸附夹套31相同。另外，也可以做成只有第一吸附夹套31从拾取部12移动至元件粘接部14的结构。
在元件粘接部14中，粘贴了元件粘接用薄膜47的半导体元件21例如粘接在引线框架、布线基板、散热基板等各种外围器件上或叠层多层时，粘接在被粘接在基板上的半导体元件上。例如如图11所示，保持在第二吸附夹套51上的半导体元件21被送至布线基板52上的规定位置之后，对元件粘接用薄膜47施加压力，将其粘接在布线基板52上。另外，薄膜粘贴部13及元件粘接部14的压力在各自的台被适当地控制。之后，利用引线键合将半导体元件21和布线基板52的端子之间连接，然后被送至规定的封装工序做成半导体器件。
图12表示将半导体元件叠层多层的状态。即，将粘接在布线基板52上的第一半导体元件21引线键合之后，再次将基板52放置在半导体制造装置11上。然后，经过同样的工序将第二半导体元件21粘接在第一半导体元件21上。如图12所示，若以从第一半导体元件21探出的方式叠层第二半导体元件21，则将第二半导体元件21引线键合时会受到弯曲应力。即使在这种情况下也可以抑制半导体元件21的碎裂，所以可以防止因碎裂发展而引起的裂纹。
另外，半导体元件21的多层叠层不限于图12所示的方式，也可以采用如图13所示的上侧的半导体元件21小的方式、或上下半导体元件21形状相同且按同一方向叠层的方式等各种叠层方式。无论是哪一种情况，都可以抑制半导体元件21的不良产生。另外，背面部粘贴了元件粘接用薄膜47的半导体元件21例如也可以如图14所示，暂且移至盘53之后再粘接在基板等上。
按照上述半导体器件的制造工序，可以抑制半导体元件21的背面部产生的碎裂，所以可以大幅度地降低不良发生率。这是因为，不但降低了半导体晶片24的切片工序的不良发生率，而且还抑制了在其后的拾取工序和引线键合工序等中产生的裂纹。通过这些，尤其是可以大幅度地降低薄型化的半导体元件21的因碎裂而引起的不良发生率。即，可以使用例如厚度小于等于200μm、进而大于等于20μm小于等于100μm的半导体元件21，高成品率地制作实现了薄型化和高密度安装的半导体器件。
另外，元件粘接用薄膜也有用粘接层粘接在半导体元件上的类型，此时元件粘接用薄膜的一面上粘贴有保护薄膜。使用这种元件粘接用薄膜时，例如如图15所示，采用具有保护薄膜剥离部61的薄膜粘贴部13。保护薄膜剥离部61具有剥离保护薄膜63的粘性胶带62。粘贴了元件粘接用薄膜47的半导体元件21暂且被推压在粘性胶带62上，用粘性胶带62将其背面侧的保护薄膜63剥离之后送往元件粘接部14。
图15示出了按半导体元件的移动方向配置了保护薄膜的剥离部61与薄膜粘贴部13的装置结构，但也可以按垂直于移动方向的方向配置(平行配置)这些。另外，保护薄膜的剥离部61也可以例如如图16或图17所示，具有通过将推压在半导体元件21上的粘性胶带62移至下方来剥离保护薄膜的机构64。粘性胶带62可以同时将左右的剥离部件移至下方，也可以按顺序(例如由右向左)移动这些左右的剥离部件。

Claims (13)

1.一种半导体器件的制造方法，其特征在于，包括：一边由表面部形成了元件区域的半导体晶片将半导体元件个片化，一边形成用保持部件保持个片化的上述半导体元件的状态的工序；从上述保持部件中拾取上述个片化的半导体元件的工序；按照上述半导体元件的形状将个片化的元件粘接用薄膜粘贴在被拾取的上述半导体元件的背面部的工序；以及，使用上述元件粘接用薄膜将上述半导体元件粘接在半导体器件形成用基材上的工序。
2.如权利要求1所述的半导体器件的制造方法，其特征在于，上述半导体元件的个片化工序包括：将上述保持部件粘贴在上述半导体晶片的背面部之后切断上述半导体晶片，维持着用上述保持部件保持上述半导体元件的状态进行个片化的工序。
3.如权利要求1所述的半导体器件的制造方法，其特征在于，上述半导体元件的个片化工序包括：从上述半导体晶片的表面部侧形成比完成时的元件厚度深的沟槽或改性层的工序；将第一保持部件粘贴在上述半导体晶片的表面部之后，磨削及研磨上述半导体晶片的背面部侧，维持着用上述第一保持部件保持上述半导体元件的状态进行个片化的工序；以及，将第二保持部件粘贴在上述半导体元件的背面部，并剥离上述第一保持部件的工序。
4.如权利要求1至3中任意一项所述的半导体器件的制造方法，其特征在于，还具有：从将长的上述元件粘接用薄膜卷起的供给滚筒供给上述元件粘接用薄膜，通过机械切断或激光切断，按照上述半导体元件的形状切断该长的元件粘接用薄膜，以进行个片化的工序。
5.如权利要求1至4中任意一项所述的半导体器件的制造方法，其特征在于，上述元件粘接用薄膜的粘贴工序包括：用多孔质状吸附部件保持上述个片化的元件粘接用薄膜，将保持在该吸附部件上的上述元件粘接用薄膜粘贴在上述半导体元件的背面部的工序。
6.一种半导体制造装置，其特征在于，具有：从用保持部件保持个片化的半导体元件的半导体晶片中拾取上述个片化的半导体元件的拾取部；按照上述半导体元件的形状将个片化的元件粘接用薄膜粘贴在上述被拾取的上述半导体元件的背面部的薄膜粘贴部；以及，将粘贴了上述元件粘接用薄膜的上述半导体元件粘接在半导体器件形成用基材上的元件粘接部。
7.如权利要求6所述的半导体制造装置，其特征在于，上述薄膜粘贴部具有：从将长的上述元件粘接用薄膜卷起的供给滚筒供给上述元件粘接用薄膜的薄膜供给部；以及，通过机械切断或激光切断，按照上述半导体元件的形状切断从上述供给滚筒供给的上述元件粘接用薄膜的薄膜切断部。
8.如权利要求7所述的半导体制造装置，其特征在于，上述薄膜切断部具有：保持上述元件粘接用薄膜的吸附部件、和冲切切断保持在上述吸附部件上的上述元件粘接用薄膜的切断机。
9.如权利要求7所述的半导体制造装置，其特征在于，上述薄膜切断部具有：保持上述元件粘接用薄膜的吸附部件、切断保持在上述吸附部件上的上述元件粘接用薄膜的激光切断机、以及按照上述半导体元件的形状移动上述激光切断机或上述吸附部件的移动机构。
10.如权利要求8或9所述的半导体制造装置，其特征在于，上述吸附部件由多孔质金属构成。
11.如权利要求6所述的半导体制造装置，其特征在于，上述拾取部具有：保持上述半导体元件的吸附夹套；以及，通过从背面侧将保持在上述吸附夹套上的上述半导体元件顶起的方法将其从上述保持部件中剥离的顶起机构。
12.如权利要求11所述的半导体制造装置，其特征在于，上述吸附夹套由多孔质金属构成。
13.如权利要求6所述的半导体制造装置，其特征在于，上述薄膜粘贴部具有：剥离粘贴在上述半导体元件的设置在上述元件粘接用薄膜的背面部侧的保护薄膜的薄膜剥离部。
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