TWI294179B - - Google Patents
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- Publication number
- TWI294179B TWI294179B TW095100255A TW95100255A TWI294179B TW I294179 B TWI294179 B TW I294179B TW 095100255 A TW095100255 A TW 095100255A TW 95100255 A TW95100255 A TW 95100255A TW I294179 B TWI294179 B TW I294179B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- shielding film
- solid
- state imaging
- imaging device
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 claims description 91
- 238000004519 manufacturing process Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 32
- 239000010410 layer Substances 0.000 claims description 23
- 238000012544 monitoring process Methods 0.000 claims description 20
- 230000005540 biological transmission Effects 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims 4
- 238000012546 transfer Methods 0.000 description 50
- 238000003860 storage Methods 0.000 description 23
- 108091006146 Channels Proteins 0.000 description 21
- 230000035945 sensitivity Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 230000005570 vertical transmission Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000005571 horizontal transmission Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
- H10F39/1515—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
- H10F39/1532—Frame-interline transfer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005019796A JP4843951B2 (ja) | 2005-01-27 | 2005-01-27 | 固体撮像装置の製造方法、固体撮像装置およびカメラ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200711117A TW200711117A (en) | 2007-03-16 |
| TWI294179B true TWI294179B (enExample) | 2008-03-01 |
Family
ID=36919055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095100255A TW200711117A (en) | 2005-01-27 | 2006-01-04 | Method for producing solid-state imaging device, solid-state imaging device, and camera |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7929036B2 (enExample) |
| JP (1) | JP4843951B2 (enExample) |
| KR (1) | KR101133901B1 (enExample) |
| CN (1) | CN100437977C (enExample) |
| TW (1) | TW200711117A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4843951B2 (ja) * | 2005-01-27 | 2011-12-21 | ソニー株式会社 | 固体撮像装置の製造方法、固体撮像装置およびカメラ |
| JP2007081137A (ja) * | 2005-09-14 | 2007-03-29 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| JP5207777B2 (ja) * | 2008-03-06 | 2013-06-12 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
| JP5446484B2 (ja) * | 2008-07-10 | 2014-03-19 | ソニー株式会社 | 固体撮像装置とその製造方法および撮像装置 |
| US8772891B2 (en) * | 2008-12-10 | 2014-07-08 | Truesense Imaging, Inc. | Lateral overflow drain and channel stop regions in image sensors |
| JP2010177599A (ja) * | 2009-01-30 | 2010-08-12 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| JP2010212365A (ja) * | 2009-03-09 | 2010-09-24 | Sony Corp | 固体撮像装置、および、その製造方法、電子機器 |
| KR20130127780A (ko) * | 2012-05-15 | 2013-11-25 | 삼성전기주식회사 | 카메라 모듈 |
| JP5885634B2 (ja) | 2012-10-02 | 2016-03-15 | キヤノン株式会社 | 固体撮像装置、および撮像システム |
| JP7624825B2 (ja) * | 2020-11-27 | 2025-01-31 | シャープセミコンダクターイノベーション株式会社 | 固体撮像装置 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62230269A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 電子スチルカメラ |
| JPS63177551A (ja) * | 1987-01-19 | 1988-07-21 | Hitachi Ltd | 固体撮像装置およびその製造方法 |
| JPH05167052A (ja) * | 1991-12-16 | 1993-07-02 | Sony Corp | 固体撮像装置の製造方法 |
| JPH05183136A (ja) * | 1991-12-27 | 1993-07-23 | Fujitsu Ltd | 固体撮像素子およびその製造方法 |
| JP2833906B2 (ja) * | 1992-01-31 | 1998-12-09 | 九州日本電気株式会社 | 固体撮像素子 |
| JPH0621410A (ja) * | 1992-07-06 | 1994-01-28 | Matsushita Electron Corp | 固体撮像装置およびその製造方法 |
| JP2950714B2 (ja) * | 1993-09-28 | 1999-09-20 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
| JPH08162623A (ja) * | 1994-12-09 | 1996-06-21 | Sony Corp | 固体撮像素子 |
| JP3339249B2 (ja) * | 1995-04-17 | 2002-10-28 | ソニー株式会社 | 固体撮像素子の製造方法 |
| JPH1056164A (ja) * | 1996-08-12 | 1998-02-24 | Toshiba Corp | 固体撮像装置 |
| KR100223805B1 (ko) | 1997-06-13 | 1999-10-15 | 구본준 | 고체 촬상소자의 제조방법 |
| JP2002158345A (ja) * | 2000-11-22 | 2002-05-31 | Shimadzu Corp | 固体撮像素子 |
| JP2002164522A (ja) * | 2000-11-24 | 2002-06-07 | Sony Corp | 固体撮像素子とその製造方法 |
| JP2002314063A (ja) * | 2001-02-06 | 2002-10-25 | Mitsubishi Electric Corp | Ｃｍｏｓイメージセンサ及びその製造方法 |
| JP2002353434A (ja) * | 2001-05-22 | 2002-12-06 | Sony Corp | 固体撮像装置の製造方法 |
| KR101053323B1 (ko) * | 2002-05-14 | 2011-08-01 | 소니 주식회사 | 반도체 장치와 그 제조 방법, 및 전자 기기 |
| JP2004228425A (ja) * | 2003-01-24 | 2004-08-12 | Renesas Technology Corp | Ｃｍｏｓイメージセンサの製造方法 |
| US7232712B2 (en) * | 2003-10-28 | 2007-06-19 | Dongbu Electronics Co., Ltd. | CMOS image sensor and method for fabricating the same |
| JP3729826B2 (ja) * | 2004-01-09 | 2005-12-21 | 松下電器産業株式会社 | 固体撮像装置の製造方法 |
| JP2005268609A (ja) * | 2004-03-19 | 2005-09-29 | Fuji Photo Film Co Ltd | 多層積層型多画素撮像素子及びテレビカメラ |
| JP4530747B2 (ja) * | 2004-07-16 | 2010-08-25 | 富士通セミコンダクター株式会社 | 固体撮像装置及びその製造方法 |
| JP2006073885A (ja) * | 2004-09-03 | 2006-03-16 | Canon Inc | 固体撮像装置、その製造方法、およびデジタルカメラ |
| JP4843951B2 (ja) * | 2005-01-27 | 2011-12-21 | ソニー株式会社 | 固体撮像装置の製造方法、固体撮像装置およびカメラ |
-
2005
- 2005-01-27 JP JP2005019796A patent/JP4843951B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-04 TW TW095100255A patent/TW200711117A/zh not_active IP Right Cessation
- 2006-01-12 US US11/331,252 patent/US7929036B2/en not_active Expired - Fee Related
- 2006-01-23 CN CNB2006100060050A patent/CN100437977C/zh not_active Expired - Fee Related
- 2006-01-26 KR KR1020060008171A patent/KR101133901B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1819147A (zh) | 2006-08-16 |
| US7929036B2 (en) | 2011-04-19 |
| CN100437977C (zh) | 2008-11-26 |
| KR20060086878A (ko) | 2006-08-01 |
| TW200711117A (en) | 2007-03-16 |
| JP2006210595A (ja) | 2006-08-10 |
| JP4843951B2 (ja) | 2011-12-21 |
| KR101133901B1 (ko) | 2012-04-09 |
| US20060166389A1 (en) | 2006-07-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |