KR101133901B1 - 고체 촬상 장치의 제조 방법, 고체 촬상 장치 및 카메라 - Google Patents

고체 촬상 장치의 제조 방법, 고체 촬상 장치 및 카메라 Download PDF

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Publication number
KR101133901B1
KR101133901B1 KR1020060008171A KR20060008171A KR101133901B1 KR 101133901 B1 KR101133901 B1 KR 101133901B1 KR 1020060008171 A KR1020060008171 A KR 1020060008171A KR 20060008171 A KR20060008171 A KR 20060008171A KR 101133901 B1 KR101133901 B1 KR 101133901B1
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South Korea
Prior art keywords
light shielding
shielding film
film
imaging device
solid
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Expired - Fee Related
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KR1020060008171A
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English (en)
Korean (ko)
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KR20060086878A (ko
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히로유끼 미야모또
다다유끼 도후꾸
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소니 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1532—Frame-interline transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020060008171A 2005-01-27 2006-01-26 고체 촬상 장치의 제조 방법, 고체 촬상 장치 및 카메라 Expired - Fee Related KR101133901B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00019796 2005-01-27
JP2005019796A JP4843951B2 (ja) 2005-01-27 2005-01-27 固体撮像装置の製造方法、固体撮像装置およびカメラ

Publications (2)

Publication Number Publication Date
KR20060086878A KR20060086878A (ko) 2006-08-01
KR101133901B1 true KR101133901B1 (ko) 2012-04-09

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KR1020060008171A Expired - Fee Related KR101133901B1 (ko) 2005-01-27 2006-01-26 고체 촬상 장치의 제조 방법, 고체 촬상 장치 및 카메라

Country Status (5)

Country Link
US (1) US7929036B2 (enExample)
JP (1) JP4843951B2 (enExample)
KR (1) KR101133901B1 (enExample)
CN (1) CN100437977C (enExample)
TW (1) TW200711117A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4843951B2 (ja) * 2005-01-27 2011-12-21 ソニー株式会社 固体撮像装置の製造方法、固体撮像装置およびカメラ
JP2007081137A (ja) * 2005-09-14 2007-03-29 Fujifilm Corp 光電変換素子及び固体撮像素子
JP5207777B2 (ja) * 2008-03-06 2013-06-12 パナソニック株式会社 固体撮像装置及びその製造方法
JP5446484B2 (ja) * 2008-07-10 2014-03-19 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
US8772891B2 (en) * 2008-12-10 2014-07-08 Truesense Imaging, Inc. Lateral overflow drain and channel stop regions in image sensors
JP2010177599A (ja) * 2009-01-30 2010-08-12 Panasonic Corp 固体撮像装置及びその製造方法
JP2010212365A (ja) * 2009-03-09 2010-09-24 Sony Corp 固体撮像装置、および、その製造方法、電子機器
KR20130127780A (ko) * 2012-05-15 2013-11-25 삼성전기주식회사 카메라 모듈
JP5885634B2 (ja) 2012-10-02 2016-03-15 キヤノン株式会社 固体撮像装置、および撮像システム
JP7624825B2 (ja) * 2020-11-27 2025-01-31 シャープセミコンダクターイノベーション株式会社 固体撮像装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183136A (ja) * 1991-12-27 1993-07-23 Fujitsu Ltd 固体撮像素子およびその製造方法
JPH05218371A (ja) * 1992-01-31 1993-08-27 Nec Kyushu Ltd 固体撮像素子
JPH08288490A (ja) * 1995-04-17 1996-11-01 Sony Corp 固体撮像素子の製造方法
KR100223805B1 (ko) 1997-06-13 1999-10-15 구본준 고체 촬상소자의 제조방법

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JPS62230269A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 電子スチルカメラ
JPS63177551A (ja) * 1987-01-19 1988-07-21 Hitachi Ltd 固体撮像装置およびその製造方法
JPH05167052A (ja) * 1991-12-16 1993-07-02 Sony Corp 固体撮像装置の製造方法
JPH0621410A (ja) * 1992-07-06 1994-01-28 Matsushita Electron Corp 固体撮像装置およびその製造方法
JP2950714B2 (ja) * 1993-09-28 1999-09-20 シャープ株式会社 固体撮像装置およびその製造方法
JPH08162623A (ja) * 1994-12-09 1996-06-21 Sony Corp 固体撮像素子
JPH1056164A (ja) * 1996-08-12 1998-02-24 Toshiba Corp 固体撮像装置
JP2002158345A (ja) * 2000-11-22 2002-05-31 Shimadzu Corp 固体撮像素子
JP2002164522A (ja) * 2000-11-24 2002-06-07 Sony Corp 固体撮像素子とその製造方法
JP2002314063A (ja) * 2001-02-06 2002-10-25 Mitsubishi Electric Corp Ｃｍｏｓイメージセンサ及びその製造方法
JP2002353434A (ja) * 2001-05-22 2002-12-06 Sony Corp 固体撮像装置の製造方法
KR101053323B1 (ko) * 2002-05-14 2011-08-01 소니 주식회사 반도체 장치와 그 제조 방법, 및 전자 기기
JP2004228425A (ja) * 2003-01-24 2004-08-12 Renesas Technology Corp Ｃｍｏｓイメージセンサの製造方法
US7232712B2 (en) * 2003-10-28 2007-06-19 Dongbu Electronics Co., Ltd. CMOS image sensor and method for fabricating the same
JP3729826B2 (ja) * 2004-01-09 2005-12-21 松下電器産業株式会社 固体撮像装置の製造方法
JP2005268609A (ja) * 2004-03-19 2005-09-29 Fuji Photo Film Co Ltd 多層積層型多画素撮像素子及びテレビカメラ
JP4530747B2 (ja) * 2004-07-16 2010-08-25 富士通セミコンダクター株式会社 固体撮像装置及びその製造方法
JP2006073885A (ja) * 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
JP4843951B2 (ja) * 2005-01-27 2011-12-21 ソニー株式会社 固体撮像装置の製造方法、固体撮像装置およびカメラ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183136A (ja) * 1991-12-27 1993-07-23 Fujitsu Ltd 固体撮像素子およびその製造方法
JPH05218371A (ja) * 1992-01-31 1993-08-27 Nec Kyushu Ltd 固体撮像素子
JPH08288490A (ja) * 1995-04-17 1996-11-01 Sony Corp 固体撮像素子の製造方法
KR100223805B1 (ko) 1997-06-13 1999-10-15 구본준 고체 촬상소자의 제조방법

Also Published As

Publication number Publication date
CN1819147A (zh) 2006-08-16
US7929036B2 (en) 2011-04-19
CN100437977C (zh) 2008-11-26
TWI294179B (enExample) 2008-03-01
KR20060086878A (ko) 2006-08-01
TW200711117A (en) 2007-03-16
JP2006210595A (ja) 2006-08-10
JP4843951B2 (ja) 2011-12-21
US20060166389A1 (en) 2006-07-27

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