JP4843951B2 - 固体撮像装置の製造方法、固体撮像装置およびカメラ - Google Patents

固体撮像装置の製造方法、固体撮像装置およびカメラ Download PDF

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Publication number
JP4843951B2
JP4843951B2 JP2005019796A JP2005019796A JP4843951B2 JP 4843951 B2 JP4843951 B2 JP 4843951B2 JP 2005019796 A JP2005019796 A JP 2005019796A JP 2005019796 A JP2005019796 A JP 2005019796A JP 4843951 B2 JP4843951 B2 JP 4843951B2
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Japan
Prior art keywords
shielding film
light shielding
solid
imaging device
state imaging
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Expired - Fee Related
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JP2005019796A
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English (en)
Japanese (ja)
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JP2006210595A5 (enExample
JP2006210595A (ja
Inventor
宏之 宮本
忠幸 堂福
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2005019796A priority Critical patent/JP4843951B2/ja
Priority to TW095100255A priority patent/TW200711117A/zh
Priority to US11/331,252 priority patent/US7929036B2/en
Priority to CNB2006100060050A priority patent/CN100437977C/zh
Priority to KR1020060008171A priority patent/KR101133901B1/ko
Publication of JP2006210595A publication Critical patent/JP2006210595A/ja
Publication of JP2006210595A5 publication Critical patent/JP2006210595A5/ja
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Publication of JP4843951B2 publication Critical patent/JP4843951B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1532—Frame-interline transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2005019796A 2005-01-27 2005-01-27 固体撮像装置の製造方法、固体撮像装置およびカメラ Expired - Fee Related JP4843951B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005019796A JP4843951B2 (ja) 2005-01-27 2005-01-27 固体撮像装置の製造方法、固体撮像装置およびカメラ
TW095100255A TW200711117A (en) 2005-01-27 2006-01-04 Method for producing solid-state imaging device, solid-state imaging device, and camera
US11/331,252 US7929036B2 (en) 2005-01-27 2006-01-12 Solid-state imaging device having improved light sensitivity and a method for producing the same
CNB2006100060050A CN100437977C (zh) 2005-01-27 2006-01-23 制造固态成像器件的方法和固态成像器件及照相机
KR1020060008171A KR101133901B1 (ko) 2005-01-27 2006-01-26 고체 촬상 장치의 제조 방법, 고체 촬상 장치 및 카메라

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005019796A JP4843951B2 (ja) 2005-01-27 2005-01-27 固体撮像装置の製造方法、固体撮像装置およびカメラ

Publications (3)

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JP2006210595A JP2006210595A (ja) 2006-08-10
JP2006210595A5 JP2006210595A5 (enExample) 2007-11-08
JP4843951B2 true JP4843951B2 (ja) 2011-12-21

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JP2005019796A Expired - Fee Related JP4843951B2 (ja) 2005-01-27 2005-01-27 固体撮像装置の製造方法、固体撮像装置およびカメラ

Country Status (5)

Country Link
US (1) US7929036B2 (enExample)
JP (1) JP4843951B2 (enExample)
KR (1) KR101133901B1 (enExample)
CN (1) CN100437977C (enExample)
TW (1) TW200711117A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4843951B2 (ja) * 2005-01-27 2011-12-21 ソニー株式会社 固体撮像装置の製造方法、固体撮像装置およびカメラ
JP2007081137A (ja) * 2005-09-14 2007-03-29 Fujifilm Corp 光電変換素子及び固体撮像素子
JP5207777B2 (ja) * 2008-03-06 2013-06-12 パナソニック株式会社 固体撮像装置及びその製造方法
JP5446484B2 (ja) * 2008-07-10 2014-03-19 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
US8772891B2 (en) * 2008-12-10 2014-07-08 Truesense Imaging, Inc. Lateral overflow drain and channel stop regions in image sensors
JP2010177599A (ja) * 2009-01-30 2010-08-12 Panasonic Corp 固体撮像装置及びその製造方法
JP2010212365A (ja) * 2009-03-09 2010-09-24 Sony Corp 固体撮像装置、および、その製造方法、電子機器
KR20130127780A (ko) * 2012-05-15 2013-11-25 삼성전기주식회사 카메라 모듈
JP5885634B2 (ja) 2012-10-02 2016-03-15 キヤノン株式会社 固体撮像装置、および撮像システム
JP7624825B2 (ja) * 2020-11-27 2025-01-31 シャープセミコンダクターイノベーション株式会社 固体撮像装置

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
JPS62230269A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 電子スチルカメラ
JPS63177551A (ja) * 1987-01-19 1988-07-21 Hitachi Ltd 固体撮像装置およびその製造方法
JPH05167052A (ja) * 1991-12-16 1993-07-02 Sony Corp 固体撮像装置の製造方法
JPH05183136A (ja) * 1991-12-27 1993-07-23 Fujitsu Ltd 固体撮像素子およびその製造方法
JP2833906B2 (ja) * 1992-01-31 1998-12-09 九州日本電気株式会社 固体撮像素子
JPH0621410A (ja) * 1992-07-06 1994-01-28 Matsushita Electron Corp 固体撮像装置およびその製造方法
JP2950714B2 (ja) * 1993-09-28 1999-09-20 シャープ株式会社 固体撮像装置およびその製造方法
JPH08162623A (ja) * 1994-12-09 1996-06-21 Sony Corp 固体撮像素子
JP3339249B2 (ja) * 1995-04-17 2002-10-28 ソニー株式会社 固体撮像素子の製造方法
JPH1056164A (ja) * 1996-08-12 1998-02-24 Toshiba Corp 固体撮像装置
KR100223805B1 (ko) 1997-06-13 1999-10-15 구본준 고체 촬상소자의 제조방법
JP2002158345A (ja) * 2000-11-22 2002-05-31 Shimadzu Corp 固体撮像素子
JP2002164522A (ja) * 2000-11-24 2002-06-07 Sony Corp 固体撮像素子とその製造方法
JP2002314063A (ja) * 2001-02-06 2002-10-25 Mitsubishi Electric Corp Ｃｍｏｓイメージセンサ及びその製造方法
JP2002353434A (ja) * 2001-05-22 2002-12-06 Sony Corp 固体撮像装置の製造方法
KR101053323B1 (ko) * 2002-05-14 2011-08-01 소니 주식회사 반도체 장치와 그 제조 방법, 및 전자 기기
JP2004228425A (ja) * 2003-01-24 2004-08-12 Renesas Technology Corp Ｃｍｏｓイメージセンサの製造方法
US7232712B2 (en) * 2003-10-28 2007-06-19 Dongbu Electronics Co., Ltd. CMOS image sensor and method for fabricating the same
JP3729826B2 (ja) * 2004-01-09 2005-12-21 松下電器産業株式会社 固体撮像装置の製造方法
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JP4530747B2 (ja) * 2004-07-16 2010-08-25 富士通セミコンダクター株式会社 固体撮像装置及びその製造方法
JP2006073885A (ja) * 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
JP4843951B2 (ja) * 2005-01-27 2011-12-21 ソニー株式会社 固体撮像装置の製造方法、固体撮像装置およびカメラ

Also Published As

Publication number Publication date
CN1819147A (zh) 2006-08-16
US7929036B2 (en) 2011-04-19
CN100437977C (zh) 2008-11-26
TWI294179B (enExample) 2008-03-01
KR20060086878A (ko) 2006-08-01
TW200711117A (en) 2007-03-16
JP2006210595A (ja) 2006-08-10
KR101133901B1 (ko) 2012-04-09
US20060166389A1 (en) 2006-07-27

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