TW200711117A - Method for producing solid-state imaging device, solid-state imaging device, and camera - Google Patents

Method for producing solid-state imaging device, solid-state imaging device, and camera

Info

Publication number
TW200711117A
TW200711117A TW095100255A TW95100255A TW200711117A TW 200711117 A TW200711117 A TW 200711117A TW 095100255 A TW095100255 A TW 095100255A TW 95100255 A TW95100255 A TW 95100255A TW 200711117 A TW200711117 A TW 200711117A
Authority
TW
Taiwan
Prior art keywords
imaging device
state imaging
solid
receiving unit
light receiving
Prior art date
Application number
TW095100255A
Other languages
English (en)
Chinese (zh)
Other versions
TWI294179B (enExample
Inventor
Hiroyuki Miyamoto
Tadayuki Dofuku
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200711117A publication Critical patent/TW200711117A/zh
Application granted granted Critical
Publication of TWI294179B publication Critical patent/TWI294179B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1532—Frame-interline transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW095100255A 2005-01-27 2006-01-04 Method for producing solid-state imaging device, solid-state imaging device, and camera TW200711117A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005019796A JP4843951B2 (ja) 2005-01-27 2005-01-27 固体撮像装置の製造方法、固体撮像装置およびカメラ

Publications (2)

Publication Number Publication Date
TW200711117A true TW200711117A (en) 2007-03-16
TWI294179B TWI294179B (enExample) 2008-03-01

Family

ID=36919055

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100255A TW200711117A (en) 2005-01-27 2006-01-04 Method for producing solid-state imaging device, solid-state imaging device, and camera

Country Status (5)

Country Link
US (1) US7929036B2 (enExample)
JP (1) JP4843951B2 (enExample)
KR (1) KR101133901B1 (enExample)
CN (1) CN100437977C (enExample)
TW (1) TW200711117A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4843951B2 (ja) * 2005-01-27 2011-12-21 ソニー株式会社 固体撮像装置の製造方法、固体撮像装置およびカメラ
JP2007081137A (ja) * 2005-09-14 2007-03-29 Fujifilm Corp 光電変換素子及び固体撮像素子
JP5207777B2 (ja) * 2008-03-06 2013-06-12 パナソニック株式会社 固体撮像装置及びその製造方法
JP5446484B2 (ja) * 2008-07-10 2014-03-19 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
US8772891B2 (en) * 2008-12-10 2014-07-08 Truesense Imaging, Inc. Lateral overflow drain and channel stop regions in image sensors
JP2010177599A (ja) * 2009-01-30 2010-08-12 Panasonic Corp 固体撮像装置及びその製造方法
JP2010212365A (ja) * 2009-03-09 2010-09-24 Sony Corp 固体撮像装置、および、その製造方法、電子機器
KR20130127780A (ko) * 2012-05-15 2013-11-25 삼성전기주식회사 카메라 모듈
JP5885634B2 (ja) 2012-10-02 2016-03-15 キヤノン株式会社 固体撮像装置、および撮像システム
JP7624825B2 (ja) * 2020-11-27 2025-01-31 シャープセミコンダクターイノベーション株式会社 固体撮像装置

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Publication number Priority date Publication date Assignee Title
JPS62230269A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 電子スチルカメラ
JPS63177551A (ja) * 1987-01-19 1988-07-21 Hitachi Ltd 固体撮像装置およびその製造方法
JPH05167052A (ja) * 1991-12-16 1993-07-02 Sony Corp 固体撮像装置の製造方法
JPH05183136A (ja) * 1991-12-27 1993-07-23 Fujitsu Ltd 固体撮像素子およびその製造方法
JP2833906B2 (ja) * 1992-01-31 1998-12-09 九州日本電気株式会社 固体撮像素子
JPH0621410A (ja) * 1992-07-06 1994-01-28 Matsushita Electron Corp 固体撮像装置およびその製造方法
JP2950714B2 (ja) * 1993-09-28 1999-09-20 シャープ株式会社 固体撮像装置およびその製造方法
JPH08162623A (ja) * 1994-12-09 1996-06-21 Sony Corp 固体撮像素子
JP3339249B2 (ja) * 1995-04-17 2002-10-28 ソニー株式会社 固体撮像素子の製造方法
JPH1056164A (ja) * 1996-08-12 1998-02-24 Toshiba Corp 固体撮像装置
KR100223805B1 (ko) 1997-06-13 1999-10-15 구본준 고체 촬상소자의 제조방법
JP2002158345A (ja) * 2000-11-22 2002-05-31 Shimadzu Corp 固体撮像素子
JP2002164522A (ja) * 2000-11-24 2002-06-07 Sony Corp 固体撮像素子とその製造方法
JP2002314063A (ja) * 2001-02-06 2002-10-25 Mitsubishi Electric Corp Ｃｍｏｓイメージセンサ及びその製造方法
JP2002353434A (ja) * 2001-05-22 2002-12-06 Sony Corp 固体撮像装置の製造方法
KR101053323B1 (ko) * 2002-05-14 2011-08-01 소니 주식회사 반도체 장치와 그 제조 방법, 및 전자 기기
JP2004228425A (ja) * 2003-01-24 2004-08-12 Renesas Technology Corp Ｃｍｏｓイメージセンサの製造方法
US7232712B2 (en) * 2003-10-28 2007-06-19 Dongbu Electronics Co., Ltd. CMOS image sensor and method for fabricating the same
JP3729826B2 (ja) * 2004-01-09 2005-12-21 松下電器産業株式会社 固体撮像装置の製造方法
JP2005268609A (ja) * 2004-03-19 2005-09-29 Fuji Photo Film Co Ltd 多層積層型多画素撮像素子及びテレビカメラ
JP4530747B2 (ja) * 2004-07-16 2010-08-25 富士通セミコンダクター株式会社 固体撮像装置及びその製造方法
JP2006073885A (ja) * 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
JP4843951B2 (ja) * 2005-01-27 2011-12-21 ソニー株式会社 固体撮像装置の製造方法、固体撮像装置およびカメラ

Also Published As

Publication number Publication date
CN1819147A (zh) 2006-08-16
US7929036B2 (en) 2011-04-19
CN100437977C (zh) 2008-11-26
TWI294179B (enExample) 2008-03-01
KR20060086878A (ko) 2006-08-01
JP2006210595A (ja) 2006-08-10
JP4843951B2 (ja) 2011-12-21
KR101133901B1 (ko) 2012-04-09
US20060166389A1 (en) 2006-07-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees