JP2011044575A5 - - Google Patents

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Publication number
JP2011044575A5
JP2011044575A5 JP2009191589A JP2009191589A JP2011044575A5 JP 2011044575 A5 JP2011044575 A5 JP 2011044575A5 JP 2009191589 A JP2009191589 A JP 2009191589A JP 2009191589 A JP2009191589 A JP 2009191589A JP 2011044575 A5 JP2011044575 A5 JP 2011044575A5
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JP
Japan
Prior art keywords
manufacturing
film
substrate
negative resist
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009191589A
Other languages
English (en)
Japanese (ja)
Other versions
JP5500907B2 (ja
JP2011044575A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009191589A priority Critical patent/JP5500907B2/ja
Priority claimed from JP2009191589A external-priority patent/JP5500907B2/ja
Priority to US12/838,451 priority patent/US8314032B2/en
Priority to KR1020100073549A priority patent/KR101126798B1/ko
Publication of JP2011044575A publication Critical patent/JP2011044575A/ja
Publication of JP2011044575A5 publication Critical patent/JP2011044575A5/ja
Application granted granted Critical
Publication of JP5500907B2 publication Critical patent/JP5500907B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009191589A 2009-08-21 2009-08-21 半導体装置およびその製造方法 Expired - Fee Related JP5500907B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009191589A JP5500907B2 (ja) 2009-08-21 2009-08-21 半導体装置およびその製造方法
US12/838,451 US8314032B2 (en) 2009-08-21 2010-07-17 Semiconductor device and method for manufacturing the same
KR1020100073549A KR101126798B1 (ko) 2009-08-21 2010-07-29 반도체 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009191589A JP5500907B2 (ja) 2009-08-21 2009-08-21 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2011044575A JP2011044575A (ja) 2011-03-03
JP2011044575A5 true JP2011044575A5 (enExample) 2012-04-26
JP5500907B2 JP5500907B2 (ja) 2014-05-21

Family

ID=43604593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009191589A Expired - Fee Related JP5500907B2 (ja) 2009-08-21 2009-08-21 半導体装置およびその製造方法

Country Status (3)

Country Link
US (1) US8314032B2 (enExample)
JP (1) JP5500907B2 (enExample)
KR (1) KR101126798B1 (enExample)

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WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012014786A1 (en) * 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
US8829512B2 (en) 2010-12-28 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
GB2489682B (en) 2011-03-30 2015-11-04 Pragmatic Printing Ltd Electronic device and its method of manufacture
GB201202544D0 (en) 2012-02-14 2012-03-28 Pragmatic Printing Ltd Electronic devices
GB2522565B (en) 2011-06-27 2016-02-03 Pragmatic Printing Ltd Transistor and its method of manufacture
JP2013012610A (ja) * 2011-06-29 2013-01-17 Dainippon Printing Co Ltd 薄膜トランジスタおよびその製造方法
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103843145B (zh) 2011-09-29 2017-03-29 株式会社半导体能源研究所 半导体装置
JP6026839B2 (ja) * 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
SG10201601757UA (en) 2011-10-14 2016-04-28 Semiconductor Energy Lab Semiconductor device
US8796682B2 (en) * 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9076505B2 (en) 2011-12-09 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
TWI613824B (zh) 2011-12-23 2018-02-01 半導體能源研究所股份有限公司 半導體裝置
US9006024B2 (en) * 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI511200B (zh) * 2013-07-25 2015-12-01 Ye Xin Technology Consulting Co Ltd 顯示面板製作方法
TWI678740B (zh) * 2013-09-23 2019-12-01 日商半導體能源研究所股份有限公司 半導體裝置
JP2016076541A (ja) 2014-10-03 2016-05-12 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法および表示装置
US9991394B2 (en) * 2015-02-20 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
JP6583812B2 (ja) * 2015-06-24 2019-10-02 国立研究開発法人物質・材料研究機構 多層構成の薄膜トランジスタの製造方法
JP6965894B2 (ja) * 2016-12-12 2021-11-10 住友電気工業株式会社 半導体デバイスの製造方法

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JP2913300B2 (ja) * 1985-09-26 1999-06-28 セイコーインスツルメンツ株式会社 薄膜トランジスタ装置の製造方法
JPS62152174A (ja) 1985-12-25 1987-07-07 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPH02128432A (ja) * 1988-11-08 1990-05-16 Fuji Xerox Co Ltd 薄膜トランジスタの製造方法
JPH02211635A (ja) * 1989-02-13 1990-08-22 Seiko Epson Corp 電界効果トランジスターの製造方法
JPH02273935A (ja) * 1989-04-14 1990-11-08 Sanyo Electric Co Ltd 薄膜トランジスタの製造方法
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JPH08228011A (ja) * 1994-12-14 1996-09-03 Toshiba Corp 半導体装置およびその製造方法
GB9907019D0 (en) * 1999-03-27 1999-05-19 Koninkl Philips Electronics Nv Thin film transistors and their manufacture
JP3447619B2 (ja) * 1999-06-25 2003-09-16 株式会社東芝 アクティブマトリクス基板の製造方法、中間転写基板
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JP2003168645A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 半導体薄膜装置、その製造方法及び画像表示装置
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
TWI294689B (en) * 2005-09-14 2008-03-11 Ind Tech Res Inst Method of tft manufacturing and a base-board substrate structure
JP2008171989A (ja) * 2007-01-11 2008-07-24 Toppan Printing Co Ltd 電界効果型トランジスタ及びその製造方法
KR100857455B1 (ko) * 2007-04-17 2008-09-08 한국전자통신연구원 산화물 반도체막상에 보호막을 형성하여 패터닝하는 박막트랜지스터의 제조방법
JP5213421B2 (ja) 2007-12-04 2013-06-19 キヤノン株式会社 酸化物半導体薄膜トランジスタ
JP5405850B2 (ja) * 2009-02-17 2014-02-05 株式会社日立製作所 酸化物半導体を有する電界効果トランジスタの製造方法
JP2010199458A (ja) * 2009-02-27 2010-09-09 Dainippon Printing Co Ltd トランジスタ素子の製造方法
JP2010199457A (ja) * 2009-02-27 2010-09-09 Dainippon Printing Co Ltd トランジスタ素子の製造方法

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