DE102012214559A8 - Graphen- und Nanoröhrchen-/Nanodraht-Transistor mit einer selbstausgerichteten Gate-Elektrodenstruktur auf transparenten Substraten und Verfahren zur Herstellung desselben - Google Patents
Graphen- und Nanoröhrchen-/Nanodraht-Transistor mit einer selbstausgerichteten Gate-Elektrodenstruktur auf transparenten Substraten und Verfahren zur Herstellung desselben Download PDFInfo
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- DE102012214559A8 DE102012214559A8 DE201210214559 DE102012214559A DE102012214559A8 DE 102012214559 A8 DE102012214559 A8 DE 102012214559A8 DE 201210214559 DE201210214559 DE 201210214559 DE 102012214559 A DE102012214559 A DE 102012214559A DE 102012214559 A8 DE102012214559 A8 DE 102012214559A8
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- dielectric layer
- transparent substrates
- nanotube
- graphene
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- 239000000758 substrate Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title 1
- 229910021389 graphene Inorganic materials 0.000 title 1
- 239000002071 nanotube Substances 0.000 title 1
- 239000002070 nanowire Substances 0.000 title 1
- 239000000463 material Substances 0.000 abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
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- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Thin Film Transistor (AREA)
- Non-Volatile Memory (AREA)
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/286,394 US8569121B2 (en) | 2011-11-01 | 2011-11-01 | Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same |
US13/286,394 | 2011-11-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE102012214559A1 DE102012214559A1 (de) | 2013-05-02 |
DE102012214559A8 true DE102012214559A8 (de) | 2013-07-04 |
DE102012214559B4 DE102012214559B4 (de) | 2018-07-05 |
Family
ID=47045455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102012214559.1A Active DE102012214559B4 (de) | 2011-11-01 | 2012-08-16 | Graphen- und Nanoröhrchen-/Nanodraht-Transistor mit einer selbstausgerichteten Gate-Elektrodenstruktur auf transparenten Substraten und Verfahren zur Herstellung desselben |
Country Status (3)
Country | Link |
---|---|
US (3) | US8569121B2 (de) |
DE (1) | DE102012214559B4 (de) |
GB (1) | GB2496239B (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2258724A1 (de) | 2002-11-21 | 2010-12-08 | Celltech R & D, Inc. | Modulierung von Immunantworten mittels multimeriserter Anti-CD83 Antikörper |
TWI479547B (zh) * | 2011-05-04 | 2015-04-01 | Univ Nat Cheng Kung | 薄膜電晶體之製備方法及頂閘極式薄膜電晶體 |
US10467252B1 (en) * | 2012-01-30 | 2019-11-05 | DiscoverReady LLC | Document classification and characterization using human judgment, tiered similarity analysis and language/concept analysis |
KR101906972B1 (ko) * | 2012-04-18 | 2018-10-11 | 삼성전자주식회사 | 튜너블 배리어를 구비한 그래핀 스위칭 소자 |
KR20140107968A (ko) * | 2013-02-28 | 2014-09-05 | 한국전자통신연구원 | 그래핀 전사방법 |
US9412556B2 (en) * | 2013-10-31 | 2016-08-09 | The Regents Of The University Of California | Transmission electron microscope cells for use with liquid samples |
CN106163980A (zh) * | 2013-11-05 | 2016-11-23 | 加利福尼亚大学董事会 | 混合碳纳米管和石墨烯纳米结构体 |
KR102065110B1 (ko) | 2013-11-12 | 2020-02-11 | 삼성전자주식회사 | 플렉서블 그래핀 스위칭 소자 |
KR20150060417A (ko) * | 2013-11-26 | 2015-06-03 | 한국전자통신연구원 | 고주파 소자 및 그 제조 방법 |
CN103700592B (zh) * | 2013-11-29 | 2016-01-27 | 中国电子科技集团公司第五十五研究所 | 基于自对准埋栅结构的二维材料场效应晶体管的制造方法 |
KR102257243B1 (ko) * | 2014-01-28 | 2021-05-27 | 삼성전자주식회사 | 튜너블 배리어를 구비한 그래핀 트랜지스터 |
US9147615B2 (en) | 2014-02-14 | 2015-09-29 | International Business Machines Corporation | Ambipolar synaptic devices |
JP6241318B2 (ja) * | 2014-02-28 | 2017-12-06 | 富士通株式会社 | グラフェン膜の製造方法及び半導体装置の製造方法 |
US9548394B2 (en) * | 2014-04-22 | 2017-01-17 | Uchicago Argonne, Llc | All 2D, high mobility, flexible, transparent thin film transistor |
KR102214833B1 (ko) | 2014-06-17 | 2021-02-10 | 삼성전자주식회사 | 그래핀과 양자점을 포함하는 전자 소자 |
DE102015203029A1 (de) * | 2014-11-17 | 2016-05-19 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Duroplastbeschichtung von Graphen |
CN105810587B (zh) * | 2014-12-31 | 2019-07-12 | 清华大学 | N型薄膜晶体管的制备方法 |
US10276698B2 (en) * | 2015-10-21 | 2019-04-30 | International Business Machines Corporation | Scalable process for the formation of self aligned, planar electrodes for devices employing one or two dimensional lattice structures |
CN105609539B (zh) * | 2015-12-22 | 2019-01-04 | 电子科技大学 | 自对准二维晶体材料场效应半导体器件及其制备方法 |
US9805900B1 (en) | 2016-05-04 | 2017-10-31 | Lockheed Martin Corporation | Two-dimensional graphene cold cathode, anode, and grid |
US11222959B1 (en) * | 2016-05-20 | 2022-01-11 | Hrl Laboratories, Llc | Metal oxide semiconductor field effect transistor and method of manufacturing same |
CN109478565A (zh) * | 2016-07-14 | 2019-03-15 | 华为技术有限公司 | 一种场效应晶体管的制作方法及场效应晶体管 |
CN108122759B (zh) * | 2016-11-30 | 2021-01-26 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板及显示装置 |
CN107256888B (zh) * | 2017-05-08 | 2020-12-22 | 中国科学院微电子研究所 | 一种基于自对准工艺的石墨烯场效应晶体管制造方法 |
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US8802514B2 (en) | 2014-08-12 |
GB2496239B (en) | 2016-01-06 |
GB2496239A (en) | 2013-05-08 |
US20140042393A1 (en) | 2014-02-13 |
DE102012214559A1 (de) | 2013-05-02 |
US8569121B2 (en) | 2013-10-29 |
US9064748B2 (en) | 2015-06-23 |
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