DE102012214559A8 - Graphen- und Nanoröhrchen-/Nanodraht-Transistor mit einer selbstausgerichteten Gate-Elektrodenstruktur auf transparenten Substraten und Verfahren zur Herstellung desselben - Google Patents

Graphen- und Nanoröhrchen-/Nanodraht-Transistor mit einer selbstausgerichteten Gate-Elektrodenstruktur auf transparenten Substraten und Verfahren zur Herstellung desselben Download PDF

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DE102012214559A8
DE102012214559A8 DE201210214559 DE102012214559A DE102012214559A8 DE 102012214559 A8 DE102012214559 A8 DE 102012214559A8 DE 201210214559 DE201210214559 DE 201210214559 DE 102012214559 A DE102012214559 A DE 102012214559A DE 102012214559 A8 DE102012214559 A8 DE 102012214559A8
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self
dielectric layer
transparent substrates
nanotube
graphene
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DE102012214559B4 (de
DE102012214559A1 (de
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Wilfried Ernst-August Haensch
Zihong Liu
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GlobalFoundries US Inc
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International Business Machines Corp
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Electrodes Of Semiconductors (AREA)
DE102012214559.1A 2011-11-01 2012-08-16 Graphen- und Nanoröhrchen-/Nanodraht-Transistor mit einer selbstausgerichteten Gate-Elektrodenstruktur auf transparenten Substraten und Verfahren zur Herstellung desselben Active DE102012214559B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/286,394 US8569121B2 (en) 2011-11-01 2011-11-01 Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
US13/286,394 2011-11-01

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DE102012214559A1 DE102012214559A1 (de) 2013-05-02
DE102012214559A8 true DE102012214559A8 (de) 2013-07-04
DE102012214559B4 DE102012214559B4 (de) 2018-07-05

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US (3) US8569121B2 (de)
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Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2258724A1 (de) 2002-11-21 2010-12-08 Celltech R & D, Inc. Modulierung von Immunantworten mittels multimeriserter Anti-CD83 Antikörper
TWI479547B (zh) * 2011-05-04 2015-04-01 Univ Nat Cheng Kung 薄膜電晶體之製備方法及頂閘極式薄膜電晶體
US10467252B1 (en) * 2012-01-30 2019-11-05 DiscoverReady LLC Document classification and characterization using human judgment, tiered similarity analysis and language/concept analysis
KR101906972B1 (ko) * 2012-04-18 2018-10-11 삼성전자주식회사 튜너블 배리어를 구비한 그래핀 스위칭 소자
KR20140107968A (ko) * 2013-02-28 2014-09-05 한국전자통신연구원 그래핀 전사방법
US9412556B2 (en) * 2013-10-31 2016-08-09 The Regents Of The University Of California Transmission electron microscope cells for use with liquid samples
CN106163980A (zh) * 2013-11-05 2016-11-23 加利福尼亚大学董事会 混合碳纳米管和石墨烯纳米结构体
KR102065110B1 (ko) 2013-11-12 2020-02-11 삼성전자주식회사 플렉서블 그래핀 스위칭 소자
KR20150060417A (ko) * 2013-11-26 2015-06-03 한국전자통신연구원 고주파 소자 및 그 제조 방법
CN103700592B (zh) * 2013-11-29 2016-01-27 中国电子科技集团公司第五十五研究所 基于自对准埋栅结构的二维材料场效应晶体管的制造方法
KR102257243B1 (ko) * 2014-01-28 2021-05-27 삼성전자주식회사 튜너블 배리어를 구비한 그래핀 트랜지스터
US9147615B2 (en) 2014-02-14 2015-09-29 International Business Machines Corporation Ambipolar synaptic devices
JP6241318B2 (ja) * 2014-02-28 2017-12-06 富士通株式会社 グラフェン膜の製造方法及び半導体装置の製造方法
US9548394B2 (en) * 2014-04-22 2017-01-17 Uchicago Argonne, Llc All 2D, high mobility, flexible, transparent thin film transistor
KR102214833B1 (ko) 2014-06-17 2021-02-10 삼성전자주식회사 그래핀과 양자점을 포함하는 전자 소자
DE102015203029A1 (de) * 2014-11-17 2016-05-19 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Duroplastbeschichtung von Graphen
CN105810587B (zh) * 2014-12-31 2019-07-12 清华大学 N型薄膜晶体管的制备方法
US10276698B2 (en) * 2015-10-21 2019-04-30 International Business Machines Corporation Scalable process for the formation of self aligned, planar electrodes for devices employing one or two dimensional lattice structures
CN105609539B (zh) * 2015-12-22 2019-01-04 电子科技大学 自对准二维晶体材料场效应半导体器件及其制备方法
US9805900B1 (en) 2016-05-04 2017-10-31 Lockheed Martin Corporation Two-dimensional graphene cold cathode, anode, and grid
US11222959B1 (en) * 2016-05-20 2022-01-11 Hrl Laboratories, Llc Metal oxide semiconductor field effect transistor and method of manufacturing same
CN109478565A (zh) * 2016-07-14 2019-03-15 华为技术有限公司 一种场效应晶体管的制作方法及场效应晶体管
CN108122759B (zh) * 2016-11-30 2021-01-26 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板及显示装置
CN107256888B (zh) * 2017-05-08 2020-12-22 中国科学院微电子研究所 一种基于自对准工艺的石墨烯场效应晶体管制造方法
CN107195669A (zh) * 2017-06-28 2017-09-22 湖南工程学院 包含金属堆叠栅电极的自对准纳米场效应管及其制作方法
TWI631741B (zh) 2017-10-19 2018-08-01 元太科技工業股份有限公司 驅動基板
CN110265303B (zh) * 2019-06-12 2021-04-02 深圳市华星光电半导体显示技术有限公司 一种显示面板的制作方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010027A (en) 1990-03-21 1991-04-23 General Electric Company Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure
JPH04152640A (ja) 1990-10-17 1992-05-26 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置の作製方法
GB9919913D0 (en) 1999-08-24 1999-10-27 Koninkl Philips Electronics Nv Thin-film transistors and method for producing the same
GB9929615D0 (en) 1999-12-15 2000-02-09 Koninkl Philips Electronics Nv Method of manufacturing an active matrix device
EP1221710B1 (de) 2001-01-05 2004-10-27 Samsung SDI Co. Ltd. Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur
US6891227B2 (en) * 2002-03-20 2005-05-10 International Business Machines Corporation Self-aligned nanotube field effect transistor and method of fabricating same
US6972219B2 (en) 2002-05-06 2005-12-06 Koninklijke Philips Electronics N.V. Thin film transistor self-aligned to a light-shield layer
CN1689129A (zh) 2002-10-07 2005-10-26 皇家飞利浦电子股份有限公司 具有自对准栅电极结构的场致发射器件及其制造方法
WO2006121155A1 (ja) 2005-05-12 2006-11-16 Japan Science And Technology Agency カーボンナノチューブ組成物及びその製造方法、アレイ、電子デバイス
US7344928B2 (en) 2005-07-28 2008-03-18 Palo Alto Research Center Incorporated Patterned-print thin-film transistors with top gate geometry
US7932539B2 (en) * 2005-11-29 2011-04-26 The Hong Kong University Of Science And Technology Enhancement-mode III-N devices, circuits, and methods
US8987808B2 (en) 2006-03-29 2015-03-24 Cambridge Enterprise Limited Thin film transistor with accurately aligned electrode patterns and electronic device(s) that include same
US7714386B2 (en) * 2006-06-09 2010-05-11 Northrop Grumman Systems Corporation Carbon nanotube field effect transistor
US8796125B2 (en) * 2006-06-12 2014-08-05 Kovio, Inc. Printed, self-aligned, top gate thin film transistor
US7998788B2 (en) 2006-07-27 2011-08-16 International Business Machines Corporation Techniques for use of nanotechnology in photovoltaics
GB2448174B (en) * 2007-04-04 2009-12-09 Cambridge Display Tech Ltd Organic thin film transistors
US7833695B2 (en) * 2007-05-31 2010-11-16 Corning Incorporated Methods of fabricating metal contact structures for laser diodes using backside UV exposure
US7858454B2 (en) * 2007-07-31 2010-12-28 Rf Nano Corporation Self-aligned T-gate carbon nanotube field effect transistor devices and method for forming the same
US8465799B2 (en) * 2008-09-18 2013-06-18 International Business Machines Corporation Method for preparation of flat step-free silicon carbide surfaces
CN101388412B (zh) * 2008-10-09 2010-11-10 北京大学 自对准栅结构纳米场效应晶体管及其制备方法
US7989800B2 (en) 2008-10-14 2011-08-02 George Mason Intellectual Properties, Inc. Nanowire field effect junction diode
KR20100073247A (ko) * 2008-12-23 2010-07-01 한국전자통신연구원 자기정렬 전계 효과 트랜지스터 구조체
KR101104248B1 (ko) 2008-12-23 2012-01-11 한국전자통신연구원 자기 정렬 전계 효과 트랜지스터 구조체
GB2466495B (en) 2008-12-23 2013-09-04 Cambridge Display Tech Ltd Method of fabricating a self-aligned top-gate organic transistor
CN101488459B (zh) 2009-02-13 2010-09-22 北京大学深圳研究生院 一种自对准的金属氧化物薄膜晶体管的制作方法
KR101592920B1 (ko) 2009-06-10 2016-02-12 삼성전자주식회사 모듈러 연산 방법 및 이를 위한 장치
KR101643758B1 (ko) * 2009-11-23 2016-08-01 삼성전자주식회사 분자빔 에피탁시 방법을 이용한 카본 절연층 제조방법 및 이를 이용한 전계효과 트랜지스터 제조방법
KR101736971B1 (ko) * 2010-10-01 2017-05-30 삼성전자주식회사 그래핀 전자 소자 및 제조방법
US8617941B2 (en) * 2011-01-16 2013-12-31 International Business Machines Corporation High-speed graphene transistor and method of fabrication by patternable hard mask materials

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US20140042393A1 (en) 2014-02-13
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US9064748B2 (en) 2015-06-23

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