CN103700592B - 基于自对准埋栅结构的二维材料场效应晶体管的制造方法 - Google Patents
基于自对准埋栅结构的二维材料场效应晶体管的制造方法 Download PDFInfo
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- CN103700592B CN103700592B CN201310626500.1A CN201310626500A CN103700592B CN 103700592 B CN103700592 B CN 103700592B CN 201310626500 A CN201310626500 A CN 201310626500A CN 103700592 B CN103700592 B CN 103700592B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
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CN201310626500.1A CN103700592B (zh) | 2013-11-29 | 2013-11-29 | 基于自对准埋栅结构的二维材料场效应晶体管的制造方法 |
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CN201310626500.1A CN103700592B (zh) | 2013-11-29 | 2013-11-29 | 基于自对准埋栅结构的二维材料场效应晶体管的制造方法 |
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CN103700592A CN103700592A (zh) | 2014-04-02 |
CN103700592B true CN103700592B (zh) | 2016-01-27 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105021683B (zh) * | 2015-06-05 | 2017-09-15 | 东南大学 | 面向生物分子检测的二硫化钼场效应晶体管的制作方法 |
CN109478565A (zh) * | 2016-07-14 | 2019-03-15 | 华为技术有限公司 | 一种场效应晶体管的制作方法及场效应晶体管 |
WO2018094664A1 (zh) * | 2016-11-24 | 2018-05-31 | 华为技术有限公司 | 场效应晶体管制造方法及场效应晶体管 |
CN106783655A (zh) * | 2016-11-30 | 2017-05-31 | 成都海威华芯科技有限公司 | 一种制备半导体集成电路器件金属横截面样品的方法 |
CN106783623B (zh) * | 2016-12-16 | 2019-10-18 | 中国电子科技集团公司第五十五研究所 | 一种倒t型埋栅结构的二维材料场效应晶体管及其制造方法 |
CN108346582A (zh) * | 2018-02-26 | 2018-07-31 | 上海电力学院 | 一种低欧姆接触场效应晶体管的制备方法 |
CN109686667A (zh) * | 2019-01-25 | 2019-04-26 | 泰科天润半导体科技(北京)有限公司 | 一种SiC基MOS器件及其制备方法和应用 |
CN114152857A (zh) * | 2021-12-07 | 2022-03-08 | 华东师范大学 | 一种二维材料场效应晶体管失效样品的制备方法 |
Citations (1)
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DE102012214559A1 (de) * | 2011-11-01 | 2013-05-02 | International Business Machines Corporation | Graphen- und Nanoröhrchen-/Nanodraht-Transistor mit einer selbstausgerichteten Gate-Elektrodenstruktur auf transparenten Substraten und Verfahren zur Herstellung desselben |
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KR20100087915A (ko) * | 2009-01-29 | 2010-08-06 | 삼성전자주식회사 | 실린더형 스토리지 노드를 포함하는 반도체 메모리 소자 및그 제조 방법 |
US8617941B2 (en) * | 2011-01-16 | 2013-12-31 | International Business Machines Corporation | High-speed graphene transistor and method of fabrication by patternable hard mask materials |
US20140077161A1 (en) * | 2011-03-02 | 2014-03-20 | The Regents Of The University Of California | High performance graphene transistors and fabrication processes thereof |
US9412442B2 (en) * | 2012-04-27 | 2016-08-09 | The Board Of Trustees Of The University Of Illinois | Methods for forming a nanowire and apparatus thereof |
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DE102012214559A1 (de) * | 2011-11-01 | 2013-05-02 | International Business Machines Corporation | Graphen- und Nanoröhrchen-/Nanodraht-Transistor mit einer selbstausgerichteten Gate-Elektrodenstruktur auf transparenten Substraten und Verfahren zur Herstellung desselben |
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Application publication date: 20140402 Assignee: Nanjing Zhongdian Core Valley High Frequency Device Industry Technology Research Institute Co., Ltd. Assignor: China Electronics Technology Group Corporation No.55 Research Institute Contract record no.: X2020980000164 Denomination of invention: Manufacturing method for two-dimensional material field effect transistor based on self-alignment embedded gate structure Granted publication date: 20160127 License type: Common License Record date: 20200119 |
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