CN109478565A - 一种场效应晶体管的制作方法及场效应晶体管 - Google Patents

一种场效应晶体管的制作方法及场效应晶体管 Download PDF

Info

Publication number
CN109478565A
CN109478565A CN201680087701.0A CN201680087701A CN109478565A CN 109478565 A CN109478565 A CN 109478565A CN 201680087701 A CN201680087701 A CN 201680087701A CN 109478565 A CN109478565 A CN 109478565A
Authority
CN
China
Prior art keywords
dimensional material
channel
source electrode
drain electrode
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680087701.0A
Other languages
English (en)
Inventor
赵冲
唐样洋
张臣雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN109478565A publication Critical patent/CN109478565A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种场效应晶体管的制作方法及场效应晶体管，涉及场效应晶体管技术开发领域，该制作方法包括：在非金属衬底(1)上形成源极(2)、漏极(3)以及二维材料生长模板(7)；使用气体在二维材料生长模板(7)上生长二维材料，将二维材料作为沟道(4)，源极(2)和漏极(3)用于催化气体分解出二维材料的元素，使二维材料的元素在二维材料生长模板(7)上生长形成沟道(4)，同时气体在源极(2)表面生长第一过渡层(8)以及在漏极(3)表面生长第二过渡层(9)。通过源极(2)和漏极(3)的催化作用可以直接在制作场效应晶体管的过程中形成作为沟道(4)的二维材料，省去了二维材料的转移过程，且沟道(4)与第一过渡层(8)、第二过渡层(9)通过化学键连接，减小了源极(2)、漏极(3)与沟道(4)的接触电阻。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN201680087701.0A 2016-07-14 2016-07-14 一种场效应晶体管的制作方法及场效应晶体管 Pending CN109478565A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2016/090084 WO2018010151A1 (zh) 2016-07-14 2016-07-14 一种场效应晶体管的制作方法及场效应晶体管

Publications (1)

Publication Number Publication Date
CN109478565A true CN109478565A (zh) 2019-03-15

Family

ID=60952297

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680087701.0A Pending CN109478565A (zh) 2016-07-14 2016-07-14 一种场效应晶体管的制作方法及场效应晶体管

Country Status (2)

Country Link
CN (1) CN109478565A (zh)
WO (1) WO2018010151A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112582541A (zh) * 2020-12-06 2021-03-30 南开大学 一种基于二维叠层异质结构的垂直单分子膜场效应晶体管及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10490673B2 (en) 2018-03-02 2019-11-26 Texas Instruments Incorporated Integration of graphene and boron nitride hetero-structure device
CN108987565B (zh) * 2018-04-17 2021-01-05 张晗 基于金属阳离子修饰黑磷的突触器件及其制备方法
CN110518071A (zh) * 2018-05-21 2019-11-29 北京纳米能源与系统研究所 利用驻极体调控的场效应晶体管及人造电子皮肤

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102738237A (zh) * 2011-04-07 2012-10-17 三星电子株式会社 石墨烯电子器件及其制造方法
CN103227194A (zh) * 2013-04-25 2013-07-31 西安电子科技大学 一种大尺寸石墨烯堆叠结构晶圆及其制备方法
CN103633024A (zh) * 2013-11-11 2014-03-12 西安电子科技大学 一种大规模h-BN介质石墨烯集成电路制备方法
CN103700592A (zh) * 2013-11-29 2014-04-02 中国电子科技集团公司第五十五研究所 基于自对准埋栅结构的二维材料场效应晶体管的制造方法
US8802514B2 (en) * 2011-11-01 2014-08-12 International Business Machines Corporation Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
CN104538449A (zh) * 2014-12-29 2015-04-22 无锡艾德发科技有限公司 一种石墨烯场效应晶体管结构及其大规模制作工艺

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781061B2 (en) * 2007-12-31 2010-08-24 Alcatel-Lucent Usa Inc. Devices with graphene layers

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102738237A (zh) * 2011-04-07 2012-10-17 三星电子株式会社 石墨烯电子器件及其制造方法
US8802514B2 (en) * 2011-11-01 2014-08-12 International Business Machines Corporation Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
CN103227194A (zh) * 2013-04-25 2013-07-31 西安电子科技大学 一种大尺寸石墨烯堆叠结构晶圆及其制备方法
CN103633024A (zh) * 2013-11-11 2014-03-12 西安电子科技大学 一种大规模h-BN介质石墨烯集成电路制备方法
CN103700592A (zh) * 2013-11-29 2014-04-02 中国电子科技集团公司第五十五研究所 基于自对准埋栅结构的二维材料场效应晶体管的制造方法
CN104538449A (zh) * 2014-12-29 2015-04-22 无锡艾德发科技有限公司 一种石墨烯场效应晶体管结构及其大规模制作工艺

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112582541A (zh) * 2020-12-06 2021-03-30 南开大学 一种基于二维叠层异质结构的垂直单分子膜场效应晶体管及其制备方法
CN112582541B (zh) * 2020-12-06 2022-07-29 南开大学 一种基于二维叠层异质结构的垂直单分子膜场效应晶体管及其制备方法

Also Published As

Publication number Publication date
WO2018010151A1 (zh) 2018-01-18

Similar Documents

Publication Publication Date Title
Gao et al. 2D ternary chalcogenides
Trivedi et al. Room‐temperature synthesis of 2D Janus crystals and their heterostructures
Li et al. Synthesis of graphene films on copper foils by chemical vapor deposition
Liu et al. Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials
Gao et al. Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils
Yang et al. Multilayer MoS2 transistors enabled by a facile dry-transfer technique and thermal annealing
Kozhakhmetov et al. Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide
CN109478565A (zh) 一种场效应晶体管的制作方法及场效应晶体管
Chiu et al. Metal‐guided selective growth of 2D materials: demonstration of a bottom‐up CMOS inverter
Park et al. Controllable P‐and N‐type conversion of MoTe2 via oxide interfacial layer for logic circuits
US7687308B2 (en) Method for fabricating carbon nanotube transistors on a silicon or SOI substrate
Ho et al. One‐Step Formation of a Single Atomic‐Layer Transistor by the Selective Fluorination of a Graphene Film
TW201145519A (en) Semiconductor device
JP2019512881A (ja) グラフェン薄膜トランジスタの製造方法
CN107012443A (zh) 一种绝缘衬底图形化直接生长石墨烯的工艺方法
US12002870B2 (en) Method of manufacturing a transistor
Das et al. Tunable Current Transport in PdSe2 via Layer‐by‐Layer Thickness Modulation by Mild Plasma
CN111620325A (zh) 一种制备石墨烯纳米带阵列的方法
CN107275218A (zh) 一种避免光刻胶沾污的二维材料器件制造方法
Kakiuchi et al. Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma
CN106952949B (zh) 石墨烯场效应晶体管及其形成方法
CN109378341A (zh) 一种二硫化钼隧穿晶体管及其制备方法
WO2023216852A1 (zh) 一种通过点击化学反应调控二维材料掺杂特性的方法及应用
CN103840003B (zh) 以三氧化二铝为栅介质的双栅石墨烯晶体管及其制备方法
CN106024586B (zh) 一种碳化硅表面清洁方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20190315