CN108987565B - 基于金属阳离子修饰黑磷的突触器件及其制备方法 - Google Patents
基于金属阳离子修饰黑磷的突触器件及其制备方法 Download PDFInfo
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- CN108987565B CN108987565B CN201810340826.0A CN201810340826A CN108987565B CN 108987565 B CN108987565 B CN 108987565B CN 201810340826 A CN201810340826 A CN 201810340826A CN 108987565 B CN108987565 B CN 108987565B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
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CN201810340826.0A CN108987565B (zh) | 2018-04-17 | 2018-04-17 | 基于金属阳离子修饰黑磷的突触器件及其制备方法 |
PCT/CN2018/101415 WO2019200790A1 (zh) | 2018-04-17 | 2018-08-21 | 基于金属阳离子修饰黑磷的突触器件及其制备方法 |
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CN109920912B (zh) * | 2019-03-28 | 2023-02-03 | 江苏师范大学 | 一种多功能突触仿生器件及其制备方法 |
CN110854265B (zh) * | 2019-09-06 | 2021-10-08 | 华东理工大学 | 一种基于聚多巴胺修饰黑磷纳米片的仿生忆阻器及其制备方法和应用 |
CN112909097B (zh) * | 2021-02-27 | 2023-04-18 | 贵溪穿越光电科技有限公司 | 一种石墨烯/黑磷烯复合薄膜晶体管及制备方法 |
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CN104966778B (zh) * | 2015-05-07 | 2018-01-23 | 清华大学 | 一种长时程记忆的频率响应学习器及其制备方法 |
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CN105742394B (zh) * | 2016-02-29 | 2017-09-29 | 北京邮电大学 | 一种基于黑磷/石墨烯异质结构的紫外探测器及其制备方法 |
CN106185848B (zh) * | 2016-07-13 | 2017-12-01 | 深圳先进技术研究院 | 一种金属离子修饰的黑磷及其制备方法与应用 |
WO2018010151A1 (zh) * | 2016-07-14 | 2018-01-18 | 华为技术有限公司 | 一种场效应晶体管的制作方法及场效应晶体管 |
CN107644906B (zh) * | 2016-07-21 | 2021-02-02 | 中芯国际集成电路制造(上海)有限公司 | 一种黑磷场效应晶体管及其制造方法 |
CN106653850A (zh) * | 2016-09-23 | 2017-05-10 | 南京大学 | 基于石墨烯/碳纳米管复合吸收层的人工神经突触晶体管 |
CN107731924A (zh) * | 2017-09-26 | 2018-02-23 | 复旦大学 | 一种黑磷场效应晶体管及其制备方法 |
CN107785434A (zh) * | 2017-10-17 | 2018-03-09 | 江苏大学 | 一种n型黑磷场效应晶体管的制备方法 |
CN107863402A (zh) * | 2017-11-03 | 2018-03-30 | 深圳大学 | 一种近红外光电探测器及其制备方法 |
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