CN107785434A - 一种n型黑磷场效应晶体管的制备方法 - Google Patents
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Abstract
本发明的目的在于提供一种n型黑磷场效应晶体管的制备方法，该方法针对目前普遍的p型黑磷场效应晶体管，提供了一种新型黑磷场效应晶体管的制备思路。通过机械剥离法获得黑磷薄膜，并转移到SiO2/Si衬底上，利用Al/Cr/Au作为电极，制备成一种n型黑磷场效应晶体管。由于Al具有较低的功函数，能够与黑磷的电子激发能良好匹配，保证了电子在黑磷沟道内的传输，使其成为载流子类型以电子为主的具有高性能的n型黑磷场效应晶体管。
Description
技术领域
本发明属于纳机电系统(NEMS)应用领域，涉及一种n型黑磷场效应晶体管的制备方法，可用于数字逻辑电路。
背景技术
自石墨烯发现以来，各种各样的新型二维材料(如：石墨炔、硅烯、氮化硼、超薄的过渡金属硫化物(TMDs)、多层III-VI族半导体等)的发现吸引了国内外大量研究学者的兴趣。石墨烯的独特的蜂窝型结构以及sp2杂化轨道使得其具有许多独特的电子性能，如没有质量的狄拉克费米子、半整数量子霍尔效应、高达106cm2V-1s-1的载流子迁移率等，所有的这些出众的性能表明石墨烯在超快速电子器件方面具有非常大的潜力。然而，由于缺少直接带隙，石墨烯很难成为替代硅成为未来电子产品的新型材料。在2008年，MoS2进入了人们的视线，MoS2具有1.8eV的直接带隙，但MoS2载流子迁移率较低，最高只能达到200cm2V-1s-1，很难成为快速响应电子器件的替代材料。因此，科学家一直在尝试寻找一种具有合理大小的开关比和高的载流子迁移率材料。2014年，复旦大学张远波教授课题组发现黑磷并成功制备成黑磷场效应晶体管，上述问题才得到解决，单层黑磷是具有2.0eV的半导体材料，其载流子迁移率达到1000cm2V-1s-1，具有成为未来快速宽带响应半导体材料的潜质。
目前，机械剥离法制备成为的黑磷场效应晶体管展现出了高性能的p型特性。然而，理论研究表明原始的黑磷并没有表现出明显的载流子类型的特性。而目前所制备的p型黑磷场效应晶体管的形成原因主要是由于空气中的氧和水分子的掺杂以及金属电极之间的接触对电子传输的抑制。因此，可以通过匹配黑磷与金属电极之间的功函数来协调场效应晶体管的载流子类型。而n型黑磷场效应晶体管的制备可以填补黑磷在电子传输器件中的空白，为其在互补金属氧化物半导体(CMOS)数字集成电路的应用提供了更大的空间。
发明内容
本发明针对目前大量的p型黑磷场效应晶体管，提供了一种新型的n型黑磷场效应晶体管的制备方法，通过使用黑磷作为沟道材料，Al/Cr/Au作为电极，制备出一种以电子作为载流子的新型场效应晶体管。
本发明的技术方案是按照以下步骤：
(1)在n型硅表面热氧化生长SiO2氧化层，在氩气环境下对其进行退火制备成衬底，并对其进行清洗。
(2)利用机械剥离法制备黑磷薄膜，将黑磷薄膜转移到预先制备的SiO2/Si衬底上。
(3)利用电子束蒸镀方法在黑磷沟道两侧沉积Al/Cr/Au作为电极，制备成为源极和漏极，形成以Al/Cr/Au为电极的黑磷场效应晶体管。
本发明具有的有益效果是：
1.本发明采用Al作为电极材料，由于金属Al具有较低的功函数(ΦM＝4.0-4.3eV)，而黑磷的电子激发能量为4.1-4.2eV，Al的功函数与黑磷的电子激发能形成良好的匹配。同时，Al电极的势垒区能够贯穿黑磷沟道，使得黑磷的费米能级保持在最小导带处。另外，Al能与黑磷之间形成肖特基接触，克服了电子运输的势垒，使得黑磷沟道能够形成载流子类型为电子的运输机制，形成n型场效应晶体管。
2.本发明采用的Al作为电极材料，金属Al与Au相比具有较低的电阻，降低了器件的功耗。Al电极能够提高载流子迁移速度，使得黑磷场效应晶体管具有更快的响应速度。
3.本发明采用的传统的场效应晶体管的制备方法，制备工艺简单，没有引入外界杂质污染，能够保证晶体管具有较高的性能。
附图说明
图1为Al/Cr/Au作为电极的n型黑磷场效应晶体管的结构示意图；
图中：1—n型掺杂硅片；2—300nm SiO2；3—少层黑磷薄片；4—源极；5—漏极。
具体实施方式
本发明使用机械剥离法获得黑磷薄膜，随后转移到SiO2/Si衬底上，最后沉积Al/Cr/Au电极，具体步骤如下：
1.利用热生长方法在电阻率为1-10Ωcm的n型硅表面热生长300nm的SiO2氧化层。依次利用丙酮、酒精、去离子水进行超声清洗5-10分钟，超声功率为50-60W，超声清洗结束后用氮气快速烘干，并置于样品盒内。
2.利用机械剥离法制备黑磷薄膜，采用粘胶带的方法。在氩气作为保护气体的手套箱内剥离(水蒸气和氧气浓度低于1p.p.m)。选取一段5-10cm的3M Scotch(思高)胶带，用镊子夹取一小块黑磷于胶带中间位置，轻轻压实，使得胶带能够均匀粘贴在黑磷表面，慢慢撕下胶带。胶带表面会粘有一层黑磷薄片，将胶带沿中间位置对折3-5次，使得黑磷能够较均匀分布在胶带上。另取一段10-15cm的胶带，将其与粘有黑磷的胶带成90°贴合，轻轻挤压，使其两段胶带能够完全贴合，慢慢撕下，平稳地将黑磷薄片一分为二。将第二段胶带保留，重复第一段胶带剥离步骤10-15次，直至胶带上面黑磷金属光泽变淡。将粘有黑磷薄片的胶带倒扣在衬底上，用弹性球轻轻挤掉胶带与衬底之间的空气，使得胶带与衬底完全贴合，将胶带与衬底置于加热台上，加热温度80-90℃，加热时间40-60分钟。最后缓慢地将胶带从衬底上揭下，将制备好的样品保存在样品盒中。由于黑磷的片层结构，当黑磷与衬底之间贴合时，黑磷与衬底之间的吸附力可以将黑磷从胶带上剥离，因此可以在衬底上获得薄层的黑磷薄膜。
3.参见图1，在黑磷沟道表面利用电子束蒸镀方法依次溅射10nm厚的Al、3nm厚的Cr和20nm厚的Au构成源极电极4和漏极电极5，形成背栅黑磷场效应晶体管。
4.背栅黑磷场效应晶体管的示意图如图1所示，以n型掺杂的硅作为背栅，SiO2作为栅介质，Al/Cr/Au作为源极和漏极，制备工艺简单。同时，与TiW/Au作为电极的p型黑磷场效应晶体管相比，Al具有较低的功函数，与黑磷的电子激发能形成良好的匹配，克服了电子运输的势垒；另外，Al具有较低的电阻值，能够减少器件自身的功率损耗，提高黑磷场效应晶体管的电学性能。
Claims (6)
1.一种n型黑磷场效应晶体管的制备方法，其特征是按以下步骤：
(1)在n型硅表面热氧化生长SiO2氧化层，在氩气环境下对其进行退火制备成衬底，并对其进行清洗。
(2)利用机械剥离法制备黑磷薄膜，将黑磷薄膜转移到预先制备的SiO2/Si衬底上。
(3)利用电子束蒸镀方法在黑磷沟道两侧沉积Al/Cr/Au作为电极，制备成为源极和漏极，形成以Al/Cr/Au为电极的黑磷场效应晶体管。
2.根据权利要求书1所述的制备方法，其特征是：步骤(3)中在黑磷沟道两侧沉积10nm厚的Al、3nm厚的Cr和20nm厚的Au。
3.根据权利要求书1所述的制备方法，其特征是：步骤(2)中黑磷的剥离和转移环境：在氩气作为保护气体，水蒸气和氧气浓度低于1p.p.m的手套箱中。
4.根据权利要求书1所述的制备方法，其特征是：步骤(1)中的SiO2氧化层的厚度为300nm。
5.根据权利要求书1所述的制备方法，其特征是：步骤(1)中SiO2/Si退火温度为550-600℃。
6.根据权利要求书1所述的制备方法，其特征是：步骤(1)中，清洗时，分别使用丙酮、无水乙醇、去离子水各超声清洗5-10分钟，超声功率为50-60W，清洗结束后用氮气快速吹干。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108987565A (zh) * | 2018-04-17 | 2018-12-11 | 张晗 | 基于金属阳离子修饰黑磷的突触器件及其制备方法 |
| CN110729297A (zh) * | 2019-10-24 | 2020-01-24 | 北京科技大学 | 石墨炔和二硫化钼结合的非易失性多级光电存储器及制备 |
| CN111627991A (zh) * | 2020-05-07 | 2020-09-04 | 中国人民解放军国防科技大学 | 一种基于黑磷制备顶栅型场效应管的方法及场效应管 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103941174A (zh) * | 2014-04-18 | 2014-07-23 | 江苏大学 | 一种判别背栅石墨烯场效应晶体管器件失效的方法 |
| CN105428417A (zh) * | 2015-11-24 | 2016-03-23 | 电子科技大学 | 自对准石墨烯/黑磷晶体管结构的制备方法 |
| CN105448714A (zh) * | 2016-01-08 | 2016-03-30 | 温州大学 | 一种大开关比场效应晶体管的制备方法 |
| CN106784009A (zh) * | 2017-01-22 | 2017-05-31 | 温州大学 | 基于pet柔性衬底的背栅黑磷场效应晶体管及制备方法 |
-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103941174A (zh) * | 2014-04-18 | 2014-07-23 | 江苏大学 | 一种判别背栅石墨烯场效应晶体管器件失效的方法 |
| CN105428417A (zh) * | 2015-11-24 | 2016-03-23 | 电子科技大学 | 自对准石墨烯/黑磷晶体管结构的制备方法 |
| CN105448714A (zh) * | 2016-01-08 | 2016-03-30 | 温州大学 | 一种大开关比场效应晶体管的制备方法 |
| CN106784009A (zh) * | 2017-01-22 | 2017-05-31 | 温州大学 | 基于pet柔性衬底的背栅黑磷场效应晶体管及制备方法 |
Non-Patent Citations (1)
| Title |
|---|
| DAVID J. PERELLO等: "High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering", 《NATURE COMMUNICATIONS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987565A (zh) * | 2018-04-17 | 2018-12-11 | 张晗 | 基于金属阳离子修饰黑磷的突触器件及其制备方法 |
| CN110729297A (zh) * | 2019-10-24 | 2020-01-24 | 北京科技大学 | 石墨炔和二硫化钼结合的非易失性多级光电存储器及制备 |
| CN110729297B (zh) * | 2019-10-24 | 2022-04-15 | 北京科技大学 | 石墨炔和二硫化钼结合的非易失性多级光电存储器及制备 |
| CN111627991A (zh) * | 2020-05-07 | 2020-09-04 | 中国人民解放军国防科技大学 | 一种基于黑磷制备顶栅型场效应管的方法及场效应管 |
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