CN108987565A - 基于金属阳离子修饰黑磷的突触器件及其制备方法 - Google Patents
基于金属阳离子修饰黑磷的突触器件及其制备方法 Download PDFInfo
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- CN108987565A CN108987565A CN201810340826.0A CN201810340826A CN108987565A CN 108987565 A CN108987565 A CN 108987565A CN 201810340826 A CN201810340826 A CN 201810340826A CN 108987565 A CN108987565 A CN 108987565A
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- -1 cation modified black phosphorus Chemical class 0.000 title claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 59
- 239000002184 metal Substances 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000010410 layer Substances 0.000 claims abstract description 83
- 239000002346 layers by function Substances 0.000 claims abstract description 30
- 238000000926 separation method Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 85
- 229910052737 gold Inorganic materials 0.000 claims description 45
- 239000010931 gold Substances 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 31
- 150000001768 cations Chemical class 0.000 claims description 29
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 28
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- 229910052742 iron Inorganic materials 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000004528 spin coating Methods 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000007772 electrode material Substances 0.000 claims description 5
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 claims description 4
- 229910001425 magnesium ion Inorganic materials 0.000 claims description 4
- BQPIGGFYSBELGY-UHFFFAOYSA-N mercury(2+) Chemical compound [Hg+2] BQPIGGFYSBELGY-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 24
- 210000004556 brain Anatomy 0.000 abstract description 14
- 230000007613 environmental effect Effects 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 42
- 230000004048 modification Effects 0.000 description 39
- 238000012986 modification Methods 0.000 description 39
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 239000000523 sample Substances 0.000 description 22
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 16
- 239000000243 solution Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 210000000225 synapse Anatomy 0.000 description 10
- 239000002390 adhesive tape Substances 0.000 description 9
- 238000011056 performance test Methods 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 8
- 230000002596 correlated effect Effects 0.000 description 8
- 238000002604 ultrasonography Methods 0.000 description 8
- 239000004205 dimethyl polysiloxane Substances 0.000 description 7
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 7
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 7
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 7
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000007774 longterm Effects 0.000 description 6
- 239000002904 solvent Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005034 decoration Methods 0.000 description 4
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000002045 lasting effect Effects 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 229920005573 silicon-containing polymer Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000002146 bilateral effect Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000011799 hole material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 210000001367 artery Anatomy 0.000 description 2
- 238000013528 artificial neural network Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000001242 postsynaptic effect Effects 0.000 description 2
- 230000003518 presynaptic effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013135 deep learning Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007787 long-term memory Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000006403 short-term memory Effects 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000000946 synaptic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Cold Cathode And The Manufacture (AREA)
- Semiconductor Memories (AREA)
Abstract
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CN201810340826.0A CN108987565B (zh) | 2018-04-17 | 2018-04-17 | 基于金属阳离子修饰黑磷的突触器件及其制备方法 |
PCT/CN2018/101415 WO2019200790A1 (zh) | 2018-04-17 | 2018-08-21 | 基于金属阳离子修饰黑磷的突触器件及其制备方法 |
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Cited By (3)
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CN109920912A (zh) * | 2019-03-28 | 2019-06-21 | 江苏师范大学 | 一种多功能突触仿生器件及其制备方法 |
CN112909097A (zh) * | 2021-02-27 | 2021-06-04 | 成都市水泷头化工科技有限公司 | 一种石墨烯/黑磷烯复合薄膜晶体管及制备方法 |
CN110854265B (zh) * | 2019-09-06 | 2021-10-08 | 华东理工大学 | 一种基于聚多巴胺修饰黑磷纳米片的仿生忆阻器及其制备方法和应用 |
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- 2018-08-21 WO PCT/CN2018/101415 patent/WO2019200790A1/zh active Application Filing
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109920912A (zh) * | 2019-03-28 | 2019-06-21 | 江苏师范大学 | 一种多功能突触仿生器件及其制备方法 |
CN109920912B (zh) * | 2019-03-28 | 2023-02-03 | 江苏师范大学 | 一种多功能突触仿生器件及其制备方法 |
CN110854265B (zh) * | 2019-09-06 | 2021-10-08 | 华东理工大学 | 一种基于聚多巴胺修饰黑磷纳米片的仿生忆阻器及其制备方法和应用 |
CN112909097A (zh) * | 2021-02-27 | 2021-06-04 | 成都市水泷头化工科技有限公司 | 一种石墨烯/黑磷烯复合薄膜晶体管及制备方法 |
CN112909097B (zh) * | 2021-02-27 | 2023-04-18 | 贵溪穿越光电科技有限公司 | 一种石墨烯/黑磷烯复合薄膜晶体管及制备方法 |
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