CN105304703B - 基于石墨烯/硅的接触势垒场效应管及其制备方法 - Google Patents
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Abstract
本发明公开了一种基于石墨烯/硅的接触势垒场效应管，自下而上依次包括栅极、n型硅衬底和二氧化硅隔离层，所述的二氧化硅隔离层上开有窗口，窗口两侧的二氧化硅隔离层表面上分别具有源极和漏极，所述的接触势垒场效应管还包括石墨烯导电通道层，石墨烯导电通道层与源极、漏极和窗口内的n型硅衬底均相接触。本发明接触势垒场效应管可以进行石墨烯通道的载流子迁移率的调控和测量，并可直接测量肖特基势垒高度变化，解决了传统的金属氧化物半导体场效应晶体管结构载流子运输受介质层影响的问题；本发明采用的制备工艺简单，成本低廉，具有易于调制且调制效果好，制备工艺简单，易于集成的特点。
Description
技术领域
本发明涉及一种场效应管及其制备方法，尤其涉及一种基于石墨烯/硅的接触势垒场效应管及其制备方法，属于微电子技术领域。
背景技术
肖特基结不仅广泛应用于计算机、通信、航空航天、汽车等电子信息领域，肖特基二极管与普通的P-N结型二极管相比，具有正向导通压降低、反向恢复时间短、抗波泳电流能力强等优点，被应用在高速高效整流电路、微波电路、高速集成电路等。
石墨烯是由单层sp2杂化碳原子构成的蜂窝状二维平面晶体薄膜，具有优异的力、热、光、电等性能。与普通金属不同，石墨烯是一种具有透明和柔性的新型二维导电材料。石墨烯和硅接触可以形成肖特基结，制备工艺简单。
发明内容
本发明的目的在于针对现有技术的不足，提供一种调制效果好且制备工艺简单的基于石墨烯/硅的接触势垒场效应管及其制备方法。
本发明的基于石墨烯/硅的接触势垒场效应管，自下而上依次包括栅极、n型硅衬底和二氧化硅隔离层，所述的二氧化硅隔离层上开有窗口，窗口两侧的二氧化硅隔离层表面上分别具有源极和漏极，所述的接触势垒场效应管还包括石墨烯导电通道层，石墨烯导电通道层与源极、漏极和窗口内的n型硅衬底均相接触。
上述技术方案中，所述的源极和漏极通常均为铝、金或金铬复合电极。
所述的栅极通常为镓铟复合电极、钛金复合电极或铝。
制备上述的基于石墨烯/硅的接触势垒场效应管的方法，包括以下步骤：
1)在n型硅衬底一面上制备二氧化硅隔离层；
2)在二氧化硅隔离层表面采用光刻和电子束蒸发技术制作源极和漏极；
3)在源极与漏极之间的二氧化硅隔离层上采用光刻和深反应刻蚀技术制作窗口，再将样品浸入缓冲氧化物刻蚀溶液中保持10-20s后取出，使窗口内n型硅衬底完全暴露；所述的缓冲氧化物刻蚀溶液为NH4F、HF和去离子水以60g:30ml:100ml的比例混合的混合溶液；
4)采用化学气相沉积法在铜箔上制作石墨烯薄膜，获得石墨烯样品；
5)将石墨烯样品表面均匀涂覆PMMA，浸入刻蚀液中保持直至去除铜箔，再将去除铜箔后的样品清洗干燥，转移至经3)处理的样品表面，并使石墨烯与源极、漏极和窗口内的n型硅衬底均接触，用丙酮和异丙醇去除PMMA后，在经3)处理的样品上获得石墨烯导电通道层；所述的刻蚀液为由CuSO4、HCl和去离子水以10g:50ml:50ml的比例混合的混合溶液；
6)在n型硅衬底的另一面上制作栅极，获得基于石墨烯/硅的接触势垒场效应管。
本发明选用n型硅作为衬底，并采用石墨烯作为导电通道，n型硅衬底中电子比空穴迁徙率大，可获得良好的频率特性。当石墨烯和n型硅接触时，在其接触面形成势垒层，此处的肖特基势垒能够控制电流传导和确定电容热性。本发明的接触势垒场效应管的工作原理如下：石墨烯与n型硅基底接触形成肖特基结，内建电场由硅基底指向石墨烯。当在硅衬底上加栅压时，石墨烯和硅基底形成的耗尽区会调控表面的石墨烯费米能级，进而使得石墨烯和硅的肖特基结势垒高度发生变化。即通过调制栅压可以改变该场效应管的特性。
本发明具有的有益效果如下：
本发明接触势垒场效应管所用材料以硅为基本材料，只需加栅压就可获得明显的接触势垒调节制备过程简单，成本低，易与现有半导体标准工艺兼容。二氧化硅绝缘层对多子形成很高的势垒，抑制硅衬底中的多子(电子)运动到石墨烯，防止漏电流。本发明不仅可进行石墨烯通道的载流子迁移率的调控和测量，还可直接测量肖特基势垒高度变化，解决了传统的金属氧化物半导体场效应晶体管结构载流子运输受介质层影响的问题；本发明的结构调制效果好且制备工艺简单，具有极大的应用前景。
附图说明
图1为基于石墨烯/硅的接触势垒场效应管的结构示意图；
图2为本发明实施例所制备的基于石墨烯/硅的接触势垒场效应管在栅压为0～1V下在不同的源漏电压下的调制现象。随着栅压增加，石墨烯薄膜内的电流逐渐减小。
图中，n型硅衬底1、二氧化硅隔离层2、窗口3、源极4、漏极5、石墨烯导电通道层6、栅极7。
具体实施方式
下面结合附图对本发明做进一步说明。
参照图1，本发明的基于石墨烯/硅的接触势垒场效应管，自下而上依次包括栅极7、n型硅衬底1和二氧化硅隔离层2，所述的二氧化硅隔离层2上开有窗口3，窗口3两侧的二氧化硅隔离层2表面上分别具有源极4和漏极5，所述的接触势垒场效应管还包括石墨烯导电通道层6，石墨烯导电通道层6与源极4、漏极5和窗口3内的n型硅衬底1均相接触。
实施例1
1)在n型硅衬底的一面上制备二氧化硅隔离层；所用的n型硅衬底的电阻率为1～10Ω·cm；二氧化硅隔离层的厚度为300nm～500nm；
2)在二氧化硅隔离层表面光刻出源极和漏极图形，然后采用电子束蒸发技术，首先生长厚度5nm的铬黏附层，再生长50nm的金电极，获得源极和漏极；源极和漏极的边界小于二氧化硅隔离层的边界；
3)在源极与漏极之间的二氧化硅隔离层表面光刻出二氧化硅窗口图形，然后通过深反应刻蚀技术，即采用C4F8等离子体刻蚀该窗口图形处的二氧化硅隔离层，再将样品浸入缓冲氧化物刻蚀溶液中保持10s；所述的缓冲氧化物刻蚀溶液为NH4F、HF和去离子水以60g:30ml:100ml的比例混合的混合溶液；
4)采用化学气相沉积法在铜箔上制作石墨烯薄膜，获得石墨烯样品；
5)将石墨烯样品表面均匀涂覆厚度为270nm的PMMA，浸入刻蚀液中保持2h去除铜箔，再将去除铜箔后的样品清洗干燥，转移至经3)处理的样品表面，并使石墨烯与源极、漏极和窗口内的n型硅衬底均接触，用丙酮和异丙醇去除PMMA后，在经3)处理的样品上获得石墨烯导电通道层；所述的刻蚀液为由CuSO4、HCl和去离子水以10g:50ml:50ml的比例混合的混合溶液；
6)在n型硅衬底1的另一面上制作钛金电极，获得栅极7，获得基于石墨烯/硅的接触势垒场效应管。
本实例所制备的基于石墨烯/硅的接触势垒场效应管在栅压1V的情况下有明显的调制效果，随着栅压的增加石墨烯内载流子浓度降低，费米能级降低进而使得石墨烯通道的电流变小，其变化曲线如图2所示。其中栅极电压的正极连接在器件的栅极7上，源极小电压信号接在源极4上，漏极5接地，如图1所示。从图2可以看出，所制备的器件随着栅压的增加，石墨烯薄膜两侧测得的电流减小。在栅压为1V源漏电压为1V时，电流降低约80μA，石墨烯费米能级约降低0.1eV，证实器件具有非常优越的调制特性。
实施例2
1)在n型硅衬底的一面上制备二氧化硅隔离层；所用的n型硅衬底的电阻率为1～10Ω·cm；二氧化硅隔离层的厚度为300nm～500nm；
2)在二氧化硅隔离层表面光刻出源极和漏极图形，然后采用电子束蒸发技术，生长铝电极，获得源极和漏极；源极和漏极的边界小于二氧化硅隔离层的边界；
3)在源极与漏极之间的二氧化硅隔离层表面光刻出二氧化硅窗口图形，然后通过深反应刻蚀技术，即采用C4F8等离子体刻蚀该窗口图形处的二氧化硅隔离层，再将样品浸入缓冲氧化物刻蚀溶液中保持20s；所述的缓冲氧化物刻蚀溶液为NH4F、HF和去离子水以60g:30ml:100ml的比例混合的混合溶液；
4)采用化学气相沉积法在铜箔上制作石墨烯薄膜，获得石墨烯样品；
5)将石墨烯样品表面均匀涂覆厚度为270nm的PMMA，浸入刻蚀液中保持4h去除铜箔，再将去除铜箔后的样品清洗干燥，转移至经3)处理的样品表面，并使石墨烯与源极、漏极和窗口内的n型硅衬底均接触，用丙酮和异丙醇去除PMMA后，在经3)处理的样品上获得石墨烯导电通道层；所述的刻蚀液为由CuSO4、HCl和去离子水以10g:50ml:50ml的比例混合的混合溶液；
6)在n型硅衬底的另一面上涂覆镓铟浆料，制备镓铟电极，与n型硅衬底形成欧姆接触，获得栅极，获得基于石墨烯/硅的接触势垒场效应管。
Claims (4)
1.基于石墨烯/硅的接触势垒场效应管，其特征在于，自下而上依次包括栅极(7)、n型硅衬底(1)和二氧化硅隔离层(2)，所述的二氧化硅隔离层(2)上开有窗口(3)，窗口(3)两侧的二氧化硅隔离层(2)表面上分别具有源极(4)和漏极(5)，所述的接触势垒场效应管还包括石墨烯导电通道层(6)，石墨烯导电通道层(6)与源极(4)、漏极(5)和窗口(3)内的n型硅衬底(1)均相接触。
2.根据权利要求1所述的基于石墨烯/硅的接触势垒场效应管，其特征在于，所述的源极(4)和漏极(5)均为铝、金或金铬复合电极。
3.根据权利要求1所述的基于石墨烯/硅的接触势垒场效应管，其特征在于，所述的栅极(7)为镓铟复合电极、钛金复合电极或铝。
4.制备如权利要求1所述的基于石墨烯/硅的接触势垒场效应管的方法，其特征在于，包括以下步骤：
1)在n型硅衬底(1)一面上制备二氧化硅隔离层(2)；
2)在二氧化硅隔离层(2)表面采用光刻和电子束蒸发技术制作源极(4)和漏极(5)；
3)在源极(4)与漏极(5)之间的二氧化硅隔离层(2)上采用光刻和深反应刻蚀技术制作窗口(3)，再将样品浸入缓冲氧化物刻蚀溶液中保持10-20s后取出；所述的缓冲氧化物刻蚀溶液为NH4F、HF和去离子水以60g:30ml:100ml的比例混合的混合溶液；
4)采用化学气相沉积法在铜箔上制作石墨烯薄膜，获得石墨烯样品；
5)将石墨烯样品表面均匀涂覆PMMA，浸入刻蚀液中保持直至去除铜箔，再将去除铜箔后的样品清洗干燥，转移至经3)处理的样品表面，并使石墨烯与源极(4)、漏极(5)和窗口(3)内的n型硅衬底(1)均接触，去除PMMA后，在经3)处理的样品上获得石墨烯导电通道层(6)；所述的刻蚀液为由CuSO4、HCl和去离子水以10g:50ml:50ml的比例混合的混合溶液；
6)在n型硅衬底(1)的另一面上制作栅极(7)，获得基于石墨烯/硅的接触势垒场效应管。
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