ATE504944T1 - Verbesserte abbildungsvorrichtungs- lichtabschirmung - Google Patents

Verbesserte abbildungsvorrichtungs- lichtabschirmung

Info

Publication number
ATE504944T1
ATE504944T1 AT04759224T AT04759224T ATE504944T1 AT E504944 T1 ATE504944 T1 AT E504944T1 AT 04759224 T AT04759224 T AT 04759224T AT 04759224 T AT04759224 T AT 04759224T AT E504944 T1 ATE504944 T1 AT E504944T1
Authority
AT
Austria
Prior art keywords
pixel
imaging device
light shielding
device light
light shield
Prior art date
Application number
AT04759224T
Other languages
English (en)
Inventor
Howard Rhodes
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE504944T1 publication Critical patent/ATE504944T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Endoscopes (AREA)
AT04759224T 2003-04-10 2004-04-08 Verbesserte abbildungsvorrichtungs- lichtabschirmung ATE504944T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/410,191 US6812539B1 (en) 2003-04-10 2003-04-10 Imager light shield
PCT/US2004/010707 WO2004093439A2 (en) 2003-04-10 2004-04-08 Improved imager light shield

Publications (1)

Publication Number Publication Date
ATE504944T1 true ATE504944T1 (de) 2011-04-15

Family

ID=33130750

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04759224T ATE504944T1 (de) 2003-04-10 2004-04-08 Verbesserte abbildungsvorrichtungs- lichtabschirmung

Country Status (9)

Country Link
US (2) US6812539B1 (de)
EP (1) EP1616435B1 (de)
JP (1) JP2006523034A (de)
KR (1) KR20050122248A (de)
CN (1) CN1802750B (de)
AT (1) ATE504944T1 (de)
DE (1) DE602004032123D1 (de)
TW (1) TWI244329B (de)
WO (1) WO2004093439A2 (de)

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US6969631B2 (en) * 2003-06-16 2005-11-29 Micron Technology, Inc. Method of forming photodiode with self-aligned implants for high quantum efficiency
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JP2005217454A (ja) * 2004-01-27 2005-08-11 Sanyo Electric Co Ltd 固体撮像装置
JP2005228997A (ja) * 2004-02-13 2005-08-25 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
US7335963B2 (en) * 2004-08-25 2008-02-26 Micron Technology, Inc. Light block for pixel arrays
US7288788B2 (en) * 2004-12-03 2007-10-30 International Business Machines Corporation Predoped transfer gate for an image sensor
US7348651B2 (en) * 2004-12-09 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Pinned photodiode fabricated with shallow trench isolation
JP4643249B2 (ja) * 2004-12-22 2011-03-02 株式会社東芝 固体撮像装置
US7935994B2 (en) 2005-02-24 2011-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Light shield for CMOS imager
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JP4785433B2 (ja) * 2005-06-10 2011-10-05 キヤノン株式会社 固体撮像装置
KR20070009829A (ko) * 2005-07-14 2007-01-19 동부일렉트로닉스 주식회사 씨모스 이미지 센서
US7683407B2 (en) * 2005-08-01 2010-03-23 Aptina Imaging Corporation Structure and method for building a light tunnel for use with imaging devices
US20070052035A1 (en) * 2005-08-23 2007-03-08 Omnivision Technologies, Inc. Method and apparatus for reducing optical crosstalk in CMOS image sensors
US7633106B2 (en) * 2005-11-09 2009-12-15 International Business Machines Corporation Light shield for CMOS imager
US20070205354A1 (en) * 2006-03-06 2007-09-06 Micron Technology, Inc. Image sensor light shield
EP2095424B1 (de) * 2006-11-29 2020-04-22 Semiconductor Components Industries, LLC Pixelstruktur mit einem abgeschirmten speicherknoten
US8045028B1 (en) 2007-04-23 2011-10-25 On Semiconductor Trading Ltd. Six transistor (6T) pixel architecture
US7531373B2 (en) * 2007-09-19 2009-05-12 Micron Technology, Inc. Methods of forming a conductive interconnect in a pixel of an imager and in other integrated circuitry
JP5385564B2 (ja) * 2008-08-18 2014-01-08 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
JP5371330B2 (ja) * 2008-08-29 2013-12-18 キヤノン株式会社 固体撮像装置
US8476567B2 (en) * 2008-09-22 2013-07-02 Semiconductor Components Industries, Llc Active pixel with precharging circuit
US8059173B2 (en) * 2008-09-26 2011-11-15 On Semiconductor Trading Ltd. Correlated double sampling pixel and method
US8138531B2 (en) * 2009-09-17 2012-03-20 International Business Machines Corporation Structures, design structures and methods of fabricating global shutter pixel sensor cells
US9410891B2 (en) 2010-02-19 2016-08-09 Pacific Biosciences Of California, Inc. Optics collection and detection system and method
JP5763474B2 (ja) * 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 光センサ
JPWO2013001809A1 (ja) * 2011-06-30 2015-02-23 パナソニック株式会社 固体撮像装置
JP2014011304A (ja) * 2012-06-29 2014-01-20 Toshiba Corp 固体撮像装置
CN104051488B (zh) * 2013-03-14 2019-06-14 马克西姆综合产品公司 光学传感器
WO2015125443A1 (ja) * 2014-02-19 2015-08-27 パナソニックＩｐマネジメント株式会社 受光デバイスおよびその製造方法
GB2529567B (en) 2015-09-22 2016-11-23 X-Fab Semiconductor Foundries Ag Light shield for light sensitive elements
CN109426766A (zh) * 2017-08-23 2019-03-05 上海箩箕技术有限公司 指纹成像模组和电子设备
CN108922905A (zh) * 2018-07-17 2018-11-30 京东方科技集团股份有限公司 一种显示基板及制备方法、显示面板

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Also Published As

Publication number Publication date
US7390690B2 (en) 2008-06-24
KR20050122248A (ko) 2005-12-28
EP1616435A2 (de) 2006-01-18
CN1802750B (zh) 2012-04-18
TWI244329B (en) 2005-11-21
WO2004093439A3 (en) 2005-02-10
TW200507636A (en) 2005-02-16
WO2004093439A2 (en) 2004-10-28
DE602004032123D1 (de) 2011-05-19
EP1616435B1 (de) 2011-04-06
US6812539B1 (en) 2004-11-02
US20040201072A1 (en) 2004-10-14
CN1802750A (zh) 2006-07-12
US20040222481A1 (en) 2004-11-11
JP2006523034A (ja) 2006-10-05

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