TWI286663B - Method for manufacturing gray tone mask, and gray tone mask - Google Patents
Method for manufacturing gray tone mask, and gray tone mask Download PDFInfo
- Publication number
- TWI286663B TWI286663B TW093118772A TW93118772A TWI286663B TW I286663 B TWI286663 B TW I286663B TW 093118772 A TW093118772 A TW 093118772A TW 93118772 A TW93118772 A TW 93118772A TW I286663 B TWI286663 B TW I286663B
- Authority
- TW
- Taiwan
- Prior art keywords
- semi
- light
- pattern
- film
- mask
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003187960 | 2003-06-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200506514A TW200506514A (en) | 2005-02-16 |
| TWI286663B true TWI286663B (en) | 2007-09-11 |
Family
ID=34587128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093118772A TWI286663B (en) | 2003-06-30 | 2004-06-28 | Method for manufacturing gray tone mask, and gray tone mask |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP4729606B2 (enExample) |
| KR (3) | KR101172645B1 (enExample) |
| CN (1) | CN100337306C (enExample) |
| TW (1) | TWI286663B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4587837B2 (ja) * | 2005-02-18 | 2010-11-24 | Hoya株式会社 | グレートーンマスクの製造方法及びグレートーンマスク |
| TW200639576A (en) * | 2005-02-28 | 2006-11-16 | Hoya Corp | Method of manufacturing gray level mask, gray level mask, and gray level mask blank |
| KR100800301B1 (ko) * | 2005-07-05 | 2008-02-01 | 주식회사 에스앤에스텍 | 그레이톤 블랭크마스크 및 포토마스크 제조방법 |
| KR100850511B1 (ko) * | 2005-12-22 | 2008-08-05 | 주식회사 에스앤에스텍 | 하프톤 블랭크 마스크 및 포토마스크의 제조방법 |
| KR100812253B1 (ko) * | 2006-01-20 | 2008-03-10 | 주식회사 에스앤에스텍 | 그레이톤 포토마스크의 제조방법, 그레이톤 포토마스크 및그레이톤 블랭크마스크 |
| CN1808267B (zh) * | 2006-02-13 | 2010-12-01 | 友达光电股份有限公司 | 掩膜及其制造方法及其应用 |
| KR100822296B1 (ko) * | 2006-04-10 | 2008-04-15 | 엘지마이크론 주식회사 | 다단 구조를 가지는 하프톤 마스크 및 그 제조 방법 |
| TW200913013A (en) * | 2007-07-30 | 2009-03-16 | Hoya Corp | Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern |
| JP2009128558A (ja) * | 2007-11-22 | 2009-06-11 | Hoya Corp | フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法 |
| CN101738846B (zh) * | 2008-11-17 | 2012-02-29 | 北京京东方光电科技有限公司 | 掩模板及其制备方法 |
| KR101186890B1 (ko) * | 2009-05-21 | 2012-10-02 | 엘지이노텍 주식회사 | 하프톤 마스크 및 이의 제조 방법 |
| CN101943854B (zh) * | 2009-07-03 | 2012-07-04 | 深圳清溢光电股份有限公司 | 半灰阶掩模板半曝光区的设计方法及其制造方法 |
| JP6186719B2 (ja) * | 2011-12-21 | 2017-08-30 | 大日本印刷株式会社 | 大型位相シフトマスクおよび大型位相シフトマスクの製造方法 |
| JP6063650B2 (ja) * | 2012-06-18 | 2017-01-18 | Hoya株式会社 | フォトマスクの製造方法 |
| JP5635577B2 (ja) * | 2012-09-26 | 2014-12-03 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
| JP6157832B2 (ja) * | 2012-10-12 | 2017-07-05 | Hoya株式会社 | 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク |
| EP2972589B1 (en) * | 2013-03-12 | 2017-05-03 | Micronic Mydata AB | Mechanically produced alignment fiducial method and alignment system |
| CN104849525B (zh) * | 2014-02-13 | 2017-12-01 | 上海和辉光电有限公司 | 使用测试组件的测试方法 |
| KR102378211B1 (ko) * | 2015-06-23 | 2022-03-25 | 삼성디스플레이 주식회사 | 마스크 및 이를 이용한 표시장치의 제조방법 |
| CN105529274B (zh) * | 2016-02-02 | 2018-10-26 | 京东方科技集团股份有限公司 | 薄膜晶体管的制作方法、阵列基板和显示装置 |
| CN105717737B (zh) * | 2016-04-26 | 2019-08-02 | 深圳市华星光电技术有限公司 | 一种掩膜版及彩色滤光片基板的制备方法 |
| CN106887439A (zh) * | 2017-03-21 | 2017-06-23 | 上海中航光电子有限公司 | 阵列基板及其制作方法、显示面板 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5153083A (en) * | 1990-12-05 | 1992-10-06 | At&T Bell Laboratories | Method of making phase-shifting lithographic masks |
| JPH0749410A (ja) * | 1993-08-06 | 1995-02-21 | Dainippon Printing Co Ltd | 階調マスク及びその製造方法 |
| JPH0764274A (ja) * | 1993-08-30 | 1995-03-10 | Sony Corp | 位相シフトマスク及びその製造方法 |
| JPH0798493A (ja) * | 1993-09-28 | 1995-04-11 | Toppan Printing Co Ltd | 位相シフトマスク及びその製造方法 |
| JPH08106151A (ja) * | 1994-10-04 | 1996-04-23 | Sony Corp | 位相シフト・マスクおよびその製造方法 |
| JPH0934099A (ja) * | 1995-07-25 | 1997-02-07 | Hoya Corp | 位相シフトマスク及びその製造方法 |
| JPH0943830A (ja) * | 1995-08-03 | 1997-02-14 | Hoya Corp | ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク並びにそれらの製造方法 |
| JPH09258426A (ja) * | 1996-03-18 | 1997-10-03 | Toshiba Corp | パターン形成方法 |
| KR100215850B1 (ko) * | 1996-04-12 | 1999-08-16 | 구본준 | 하프톤 위상 반전 마스크 및_그제조방법 |
| JPH1064788A (ja) * | 1996-08-22 | 1998-03-06 | Toshiba Corp | 半導体装置の製造方法と露光用マスク |
| JPH1124231A (ja) * | 1997-07-01 | 1999-01-29 | Sony Corp | ハーフトーン位相シフトマスク、及びその製造方法 |
| JPH11289010A (ja) * | 1998-04-01 | 1999-10-19 | Sony Corp | 多層配線の形成方法 |
| JPH11295874A (ja) * | 1998-04-15 | 1999-10-29 | Oki Electric Ind Co Ltd | 位相シフトマスクの製造方法 |
| JPH11327121A (ja) * | 1998-05-20 | 1999-11-26 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスクの製造方法およびハーフトーン型位相シフトマスクのブランク |
| CN1139837C (zh) * | 1998-10-01 | 2004-02-25 | 三星电子株式会社 | 液晶显示器用薄膜晶体管阵列基板及其制造方法 |
| JP2001022048A (ja) * | 1999-07-07 | 2001-01-26 | Toppan Printing Co Ltd | 遮光領域つきハーフトーン型位相シフトマスク |
| JP3749083B2 (ja) * | 2000-04-25 | 2006-02-22 | 株式会社ルネサステクノロジ | 電子装置の製造方法 |
| JP2001324725A (ja) * | 2000-05-12 | 2001-11-22 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
| KR20020002089A (ko) * | 2000-06-29 | 2002-01-09 | 주식회사 현대 디스플레이 테크놀로지 | 고개구율 액정 표시 소자의 제조방법 |
| JP2002189281A (ja) * | 2000-12-19 | 2002-07-05 | Hoya Corp | グレートーンマスク及びその製造方法 |
| JP2003029393A (ja) * | 2001-07-12 | 2003-01-29 | Matsushita Electric Ind Co Ltd | マスク、それを用いたパターン形成方法およびリソグラフィ方法 |
| JP3831868B2 (ja) * | 2001-08-13 | 2006-10-11 | 大林精工株式会社 | アクティブマトリックス表示装置とその製造方法 |
| JP2003255510A (ja) * | 2002-03-01 | 2003-09-10 | Hitachi Ltd | 電子装置の製造方法 |
-
2004
- 2004-06-28 TW TW093118772A patent/TWI286663B/zh not_active IP Right Cessation
- 2004-06-30 KR KR1020040050390A patent/KR101172645B1/ko not_active Expired - Fee Related
- 2004-06-30 CN CNB2004100625413A patent/CN100337306C/zh not_active Expired - Lifetime
-
2007
- 2007-03-26 KR KR1020070029448A patent/KR101182038B1/ko not_active Expired - Fee Related
-
2008
- 2008-07-28 JP JP2008193231A patent/JP4729606B2/ja not_active Expired - Lifetime
- 2008-09-27 JP JP2008249334A patent/JP4806701B2/ja not_active Expired - Fee Related
-
2011
- 2011-09-28 KR KR1020110097940A patent/KR101215742B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4729606B2 (ja) | 2011-07-20 |
| KR20050002662A (ko) | 2005-01-10 |
| KR20070038493A (ko) | 2007-04-10 |
| JP4806701B2 (ja) | 2011-11-02 |
| KR101172645B1 (ko) | 2012-08-08 |
| JP2008282046A (ja) | 2008-11-20 |
| CN100337306C (zh) | 2007-09-12 |
| JP2008310367A (ja) | 2008-12-25 |
| KR101215742B1 (ko) | 2012-12-26 |
| KR20110122654A (ko) | 2011-11-10 |
| CN1577085A (zh) | 2005-02-09 |
| TW200506514A (en) | 2005-02-16 |
| KR101182038B1 (ko) | 2012-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |